CN102122690A - Multi-quantum well structure, light-emitting diode and packaging part of light-emitting diode - Google Patents
Multi-quantum well structure, light-emitting diode and packaging part of light-emitting diode Download PDFInfo
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- CN102122690A CN102122690A CN 201110008815 CN201110008815A CN102122690A CN 102122690 A CN102122690 A CN 102122690A CN 201110008815 CN201110008815 CN 201110008815 CN 201110008815 A CN201110008815 A CN 201110008815A CN 102122690 A CN102122690 A CN 102122690A
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Abstract
The invention discloses a multi-quantum-well structure, a manufacturing method thereof, a light-emitting diode and a packaging part of the light-emitting diode. The multi-quantum-well structure comprises a plurality of barrier layers as well as a first active layer and a second active layer which are separated by the barrier layers, wherein the barrier layers emit purple light, the first active layer emits blue light, the second active layer emits green light, and the energy band gaps of the barrier layers are smaller than those of a first conduction type semiconductor layer and a second conduction type semiconductor layer. The multi-quantum-well structure can be used for effectively preventing the escape of a current carrier, improving the probability of compounding electrons with holes and improving the internal quantum efficiency of the light-emitting diode; and in addition, the light-emitting diode is a cold white LED (light-emitting diode) and has the advantages of small volume, low energy consumption, fast response, long service life and no pollution.
Description
Technical field
The present invention relates to the semiconductor light emitting field, particularly relate to a kind of multi-quantum pit structure and manufacture method thereof, comprise the light-emitting diode and the light emission diode package member of described multi-quantum pit structure.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is applied to various fields owing to have long, advantage such as power consumption is low of life-span, especially day by day significantly improves along with its illumination performance index, and LED is commonly used for light-emitting device at lighting field.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.
The researcher obtains the gallium nitrate based blue LED electro-optical efficiency of indium recently about 60%, yet, still lower by the internal quantum efficiency of electronics and the compound generation light of holoe carrier.What is worse, internal quantum efficiency reaches peak value usually when current density is significantly less than operating current, and is accompanied by the increase of electric current and dull the reduction.This phenomenon is commonly referred to " sagging (droop) ".For reaching the peak efficiency of indium gallium nitride based LED, it is vital understanding and reducing " sagging ".People have proposed the various possibility mechanism that cause this " sagging " effect, comprise the charge carrier escape, loss that dislocation causes and auger effect.
Specifically please refer to Fig. 1, it is the generalized section of existing a kind of light-emitting diode, the gallium nitrate based light-emitting diode of indium that described light-emitting diode 10 is a L type structure, and described light-emitting diode 10 is the light-emitting diode of Sapphire Substrate.Described light-emitting diode 10 comprises: Sapphire Substrate 100; Be positioned at n type semiconductor layer 120, multi-quantum pit structure (MQW) 130 and p type semiconductor layer 140 on the Sapphire Substrate 100 successively.Because Sapphire Substrate 100 is non-conductive, therefore, light-emitting diode also needs to form the opening that the degree of depth extends to n type semiconductor layer 120, wherein, n type electrode 160 is positioned at described opening, be used to connect n type semiconductor layer 120 and power cathode, p type electrode 170 is positioned at p type semiconductor layer 140 tops, is used to connect p type semiconductor layer 140 and positive source.Wherein, n type semiconductor layer 120 is made of n-GaN usually, and p type semiconductor layer 140 is made of p-GaN usually.
Please refer to Fig. 2 and Fig. 3, wherein, Fig. 2 is the generalized section of multi-quantum pit structure shown in Figure 1, and Fig. 3 is the energy band diagram of multi-quantum pit structure shown in Figure 2.A plurality of active layers 132 that described multi-quantum pit structure 130 generally includes a plurality of barrier layers 131 and separated by barrier layer 131, described active layer is also referred to as potential well layer or active layer, energy bandgaps between the conduction band energy of described active layer 132 and the valence band energy is less than the energy bandgaps of barrier layer 131, and described active layer 132 and barrier layer 131 constitute by the III-V semiconducting compound.General, described active layer 132 is by In
1-xGa
xThe N material constitutes, and described barrier layer 131 is made of gallium nitride.And the energy gap of a plurality of active layers 132 is all identical, and the energy bandgaps Eg of promptly a plurality of active layers 132 is all identical, that is to say, the degree of depth of each trap all is identical.
Described light-emitting diode 10 is used for when luminous, with first electrode 160 be electrically connected to power cathode, second electrode 170 is electrically connected to positive source, because n type semiconductor layer 120 is opposite with the doping type of p type semiconductor layer 140, the gallium nitride that the n type mixes drives by external voltage and makes electron drift, the gallium nitride that the p type mixes drives by external voltage and makes hole drift, under the PN junction forward bias, near the PN junction district or in the trap, after high-octane electronics was fallen valence band and hole-recombination in the conduction band, unnecessary energy discharged with the form of light and heat.By adjusting the band structure and the energy bandgaps of material, can change light wavelength that light-emitting diode sends, just spectrum or color; By adjusting the flow through size of led current, the just intensity of scalable light emitting diode light.Be understandable that although in described light-emitting diode 10, owing to adopted multi-quantum pit structure, it is than traditional single quantum, charge carrier is not easy to escape more,, this still can not satisfy the demands.How can further prevent the charge carrier escape, thereby improve the internal quantum efficiency of light-emitting diode, become those skilled in the art's problem demanding prompt solution.
In order to solve the problem that charge carrier is escaped, another kind of multi-quantum pit structure is also disclosed in the prior art.As shown in Figure 4, the mode of described multi-quantum pit structure by the barrier layer at two ends is increased reaches the purpose that stops that charge carrier is escaped.Yet the energy bandgaps Eg of the active layer of described multi-quantum pit structure is all identical, only relies on and increases barrier layer, still can not reach the effect that preferable inhibition charge carrier is escaped.
CN 1518137A discloses a kind of optics with quantum well, this optics with quantum well has predetermined linear tilt by conduction band energy and the valence band energy that makes quantum well, perhaps, have the band gap hierarchic structure of using a plurality of active layers, improved the recombination rate in electronics and hole thus.Yet this patent only is that electronics and hole can be distributed uniformly, but can not stop the charge carrier escape very effectively.
CN 1567607A discloses a kind of light-emitting diode of the GaN of having based multiple quantum well, the quantum well region of this light-emitting diode undopes, the growth of quantum well region both sides has plain GaN separator, thickness by reasonable adjustment GaN separator, can adjust the position of p-N knot effectively, improve the recombination probability in electronics and hole.Yet this patent also only makes electronics and the hole in the quantum well spatially coincide together, and can not stop the charge carrier escape very effectively.
Summary of the invention
The objective of the invention is to, a kind of multi-quantum pit structure and manufacture method thereof are provided, with the fugacious problem of the charge carrier that solves existing multi-quantum pit structure.
For solving the problems of the technologies described above, the invention provides a kind of multi-quantum pit structure, described multi-quantum pit structure is arranged between first conductive type semiconductor layer and second conductive type semiconductor layer, described multi-quantum pit structure comprises a plurality of barrier layers and first active layer and second active layer that are separated by barrier layer, described barrier layer emission purple light, first active layer emission blue light, the second active layer transmitting green light, wherein, the energy bandgaps of barrier layer is less than the energy bandgaps of first conductive type semiconductor layer and second conductive type semiconductor layer.
Optionally, in described multi-quantum pit structure, described barrier layer, first active layer and second active layer constitute by the III-V compounds of group.Described first conductive type semiconductor layer and second conductive type semiconductor layer are made of GaN, and described barrier layer is by In
1-zGa
zN constitutes, and described first active layer is by In
1-xGa
xN constitutes, and described second active layer is by In
1-yGa
yN constitutes, wherein, and 0.7≤x≤0.9,0.6≤y≤0.8, and satisfy 0＜y＜x＜z＜1.
Optionally, in described multi-quantum pit structure, the quantity of described first active layer and second active layer is 2～100; Described first active layer and second active layer are arranged alternately; The thickness of described barrier layer is 8～12nm, and the thickness of described first active layer and second active layer is 2～5nm.
Accordingly, the present invention also provides a kind of manufacture method of multi-quantum pit structure, comprising: alternately form the barrier layer of a plurality of emission purple lights, first active layer of emission blue light and second active layer of transmitting green light between first conductive type semiconductor layer and second conductive type semiconductor layer; Wherein, when forming described barrier layer, make the energy bandgaps of the energy bandgaps of described barrier layer less than described first conductive type semiconductor layer and second conductive type semiconductor layer.
Optionally, in the manufacture method of described multi-quantum pit structure, utilize the mode of metallo-organic compound chemical vapour deposition (CVD), alternately form the barrier layer of a plurality of emission purple lights, first active layer of emission blue light and second active layer of transmitting green light.
Optionally, in the manufacture method of described multi-quantum pit structure, described barrier layer, first active layer and second active layer constitute by the III-V compounds of group.Described first conductive type semiconductor layer and second conductive type semiconductor layer are made of GaN, and described barrier layer is by In
1-zGa
zN constitutes, and described first active layer is by In
1-xGa
xN constitutes, and described second active layer is by In
1-yGa
yN constitutes, wherein, and 0.7≤x≤0.9,0.6≤y≤0.8, and satisfy 0＜y＜x＜z＜1.
Optionally, in the manufacture method of described multi-quantum pit structure, the quantity of described first active layer and second active layer is 2～100; The thickness of described barrier layer is 8～12nm, and the thickness of described first active layer and second active layer is 2～5nm.
Accordingly, the present invention also provides a kind of light-emitting diode, comprising: first conductive type semiconductor layer and second conductive type semiconductor layer; And described multi-quantum pit structure.
Optionally, in described light-emitting diode, also comprise substrate, resilient coating and transparency conducting layer, wherein, described resilient coating is between the described substrate and first conductive type semiconductor layer; Described transparency conducting layer is positioned on described second conductive type semiconductor layer.Described first conduction type is the n type, and described second conduction type is the p type.
Optionally, in described light-emitting diode, described light-emitting diode comprises that also first electrode, second electrode and the degree of depth extend to the opening of first conductive type semiconductor layer, wherein, described first electrode is positioned at opening, is used to connect first conductive type semiconductor layer and power cathode; Described second electrode is positioned at the transparency conducting layer top, is used to connect transparency conducting layer and positive source.
Optionally, in described light-emitting diode, described light-emitting diode also comprises first electrode and second electrode, wherein, described first electrode is positioned on the surface of described substrate away from first conductive type semiconductor layer, is used to connect first conductive type semiconductor layer and power cathode; Described second electrode is positioned at the transparency conducting layer top, is used to connect transparency conducting layer and positive source.
Accordingly, the present invention also provides a kind of light emission diode package member, comprising: described light-emitting diode; And the fluorescent material that is arranged on described light emitting surface of light emitting diode, so that the light of predetermined color to be provided.
Optionally, in described light emission diode package member, also comprise the epoxy resin that covers described light emitting surface of light emitting diode, described fluorescent material is coated in described epoxy resin surface.
Optionally, in described light emission diode package member, also comprise the epoxy resin that covers described light emitting surface of light emitting diode, described fluorescent material is incorporated in the described epoxy resin.
Optionally, in described light emission diode package member, described fluorescent material and fluorescent material are modulated into fluorescent glue with glue, more described fluorescent glue are coated in light emitting surface of light emitting diode.
Optionally, in described light emission diode package member, described fluorescent material is purple light excited fluorescent material, so that warm white to be provided.
Owing to adopted above technical scheme, compared with prior art, the present invention has the following advantages:
In multi-quantum pit structure provided by the invention, the energy bandgaps of barrier layer is less than the energy bandgaps of first conductive type semiconductor layer and second conductive type semiconductor layer, can prevent the charge carrier escape effectively, improve the compound probability in electronics and hole, and then improve the internal quantum efficiency of light-emitting diode; And, described barrier layer emission purple light, described first active layer emission blue light, the described second active layer transmitting green light, therefore the light-emitting diode that comprises described multi-quantum pit structure is cold white light LEDs, compare with the traditional lighting light source, cold white light LEDs has that volume is little, less energy consumption, response is fast, the life-span is long, advantage such as pollution-free;
In light emission diode package member provided by the invention, by exiting surface fluorescent material is set, to reach the purpose that predetermined color light is provided at light-emitting diode; Especially, purple light excited fluorescent material is set, to produce warm white by exiting surface at light-emitting diode.
Description of drawings
Fig. 1 is the generalized section of existing a kind of light-emitting diode;
Fig. 2 is the generalized section of multi-quantum pit structure shown in Figure 1;
Fig. 3 is the energy band diagram of multi-quantum pit structure shown in Figure 2;
Fig. 4 is the energy band diagram of existing another kind of multi-quantum pit structure;
Fig. 5 is the generalized section of the multi-quantum pit structure of the embodiment of the invention;
Fig. 6 is the energy band diagram of multi-quantum pit structure shown in Figure 5;
Fig. 7 is the generalized section of the light-emitting diode of the embodiment of the invention;
Fig. 8 is the generalized section of the light emission diode package member of the embodiment of the invention.
Embodiment
Please refer to Fig. 5 and Fig. 6, wherein, Fig. 5 is the generalized section of the multi-quantum pit structure of the embodiment of the invention, and Fig. 6 is the energy band diagram of multi-quantum pit structure shown in Figure 5.
As shown in Figure 5 and Figure 6, the multi-quantum pit structure 230 that the embodiment of the invention provides is arranged between first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230, described multi-quantum pit structure 230 comprises a plurality of barrier layers 231 and first active layer 232 and second active layer 233 that are separated by barrier layer 231, described barrier layer 231 emission purple lights, described first active layer, 232 emission blue lights, described second active layer, 233 transmitting green lights, wherein, the energy bandgaps of described barrier layer 231 is less than the energy bandgaps of first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230.
Because the energy bandgaps of described barrier layer 232 is less than the energy bandgaps of first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230, can prevent the charge carrier escape effectively, improve the compound probability in electronics and hole, and then improve the internal quantum efficiency of light-emitting diode; And, described barrier layer 231 emission purple lights, described first active layer, 232 emission blue lights, described second active layer, 233 transmitting green lights, therefore the light-emitting diode that comprises multi-quantum pit structure 230 is cold white light LEDs, compare with the traditional lighting light source, it is little that cold white light LEDs has a volume, less energy consumption, response is fast, life-span is long, advantage such as pollution-free, it can avoid the demand for short-life wavelength shifter based on phosphor, and therefore show good reliability, improve power utilization efficient, have lower forward operating voltage, and light time of different distance and angle observation post emission seldom or do not have a spectral shift (spectrum shift).
Wherein, described barrier layer 231, first active layer 232 and second active layer 233 constitute by the III-V compounds of group.Preferably, described first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230 are made of GaN, and described barrier layer 231 is by In
1-zGa
zN constitutes, and described first active layer 232 is by In
1-xGa
xN constitutes, and described second active layer 233 is by In
1-yGa
yN constitutes, wherein, and 0.7≤x≤0.9,0.6≤y≤0.8, and satisfy 0＜y＜x＜z＜1.Wherein, the energy bandgaps of described barrier layer 232 is about 3.1eV, has emission peak about 400nm greatly, i.e. barrier layer 232 emission purple lights; The energy bandgaps Eg of described first active layer 232 is about 2.8eV, has emission peak about 428nm greatly, i.e. first active layer, 232 emission blue lights; The energy bandgaps Eg of described second active layer 233 is about 2.35eV, has emission peak about 533nm greatly, i.e. second active layer, 233 transmitting green lights.Need to prove that foregoing description also is not used in qualification the present invention, the numerical value of described x, y, z can omit inching, as long as make the light of its emission predetermined wavelength.
Wherein, the quantity of first active layer 232 and second active layer 233 is 2～100.Preferably, the quantity of first active layer 232 and second active layer 233 is 2～6, first active layer and the second active layer number are set to above-mentioned numerical value, can be under the prerequisite that obtains comparatively desirable internal quantum efficiency, simplify the structure of multi-quantum pit structure 230 as much as possible, thereby reduce the complexity of manufacturing process.Certainly, the number of described first active layer 232 and second active layer 233 is not limited to the numerical value of foregoing description.
In the present embodiment, described first active layer 232 and second active layer 233 are arranged alternately, each layer stacking order that is described multi-quantum pit structure 230 is as follows: barrier layer 231, first active layer 232, barrier layer 231, second active layer 233, barrier layer 231, first active layer 232, barrier layer 231, second active layer 233, barrier layer 231, first active layer 232, barrier layer 231, second active layer 233, barrier layer 231, first active layer 232, barrier layer 231, second active layer 233, barrier layer 231, and to launch uniform light.Need to prove that in other embodiment of the present invention, each of described multi-quantum pit structure layer stacking order also can adjust, for example: barrier layer 231, second active layer 233, first active layer 232, barrier layer 231, analogize in proper order with this.
As shown in Figure 6, in the multi-quantum pit structure 230 that present embodiment provides, each trap is square trap, be understandable that described multi-quantum pit structure 230 also can be the trap of other shape, for example, trapezoidal trap or triangle trap, as long as make barrier layer 231 emission purple lights, first active layer, 232 emission blue lights, second active layer, 233 transmitting green lights get final product.
In the multi-quantum pit structure 230 that present embodiment provides, the thickness of a plurality of barrier layers 231 all is identical, and the thickness of a plurality of active layers 232 also is identical, so that processing and fabricating.For example, the thickness of described barrier layer 231 is 8～12nm, and the thickness of described first active layer 232 and second active layer 233 is 2～5nm.
Yet will be appreciated that, thickness between described a plurality of barrier layer 231 also can be inequality, equally, thickness between described a plurality of first active layer 232 also can be inequality, thickness between a plurality of second active layers 232 also can be inequality, and those skilled in the art can reach the purpose of emission predetermined wavelength light by the thickness of adjusting barrier layer 231 and active layer 232.
The embodiment of the invention also provides a kind of multi-quantum pit structure manufacture method, and described multi-quantum pit structure manufacture method comprises: alternately form the barrier layer 231 of a plurality of emission purple lights, first active layer 232 of emission blue light and second active layer 233 of transmitting green light between first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230; Wherein, when forming described barrier layer 231, make the energy bandgaps 230 of the energy bandgaps of described barrier layer 231 less than described first conductive type semiconductor layer 220 and second conductive type semiconductor layer, escape to prevent charge carrier effectively, improve the compound probability in electronics and hole, and then improve the internal quantum efficiency of light-emitting diode; And, described barrier layer 231 emission purple lights, described first active layer, 232 emission blue lights, described second active layer, 233 transmitting green lights, therefore the light-emitting diode that comprises described multi-quantum pit structure is cold white light LEDs, has that volume is little, less energy consumption, response is fast, the life-span is long, advantage such as pollution-free.
Can utilize the mode of metallo-organic compound chemical vapour deposition (CVD) (MOCVD), utilize the mode of metallo-organic compound chemical vapour deposition (CVD), alternately form the barrier layer 231 of a plurality of emission purple lights, first active layer 232 of emission blue light and second active layer 233 of transmitting green light.Described barrier layer 231, first active layer 232 and second active layer 233 constitute by the III-V compounds of group, by adjusting the composition of barrier layer 231, first active layer 232 and second active layer 233, can make the light of its emission predetermined wavelength.
In the present embodiment, the technological temperature of described metallo-organic compound chemical vapor deposition method for example is 540～800 ℃, and chamber pressure can be 50～400Torr, and the Ga source can be TMGa or TEGa, and the In source can be TMIn or TEIn, and the N source for example is NH
3, carrier gas can be N2, H2 or other inert gas.Wherein, the flow in In source can be 100～500 μ mol/min, and Ga source and In source ratio can be 0.1～0.4, NH
3Flow can be 0.3～0.5slpm, the flow of carrier gas can be 0.3～0.5slpm.Can in same chamber, finish above-mentioned technology, only need to change different programs (controlling different flows), can realize above-mentioned purpose.Certainly, foregoing description also is not used in qualification the present invention, and those skilled in the art can adjust reacting gas and every technological parameter accordingly according to the actual conditions of metallo-organic compound chemical vapour deposition (CVD) board.
Specifically, can be when carrying out the metallo-organic compound chemical vapor deposition method, adjust the flow in In source separately, perhaps, adjust the flow in Ga source separately, perhaps, the flow of adjusting In source and Ga source is simultaneously adjusted the numerical value of x, y, z accordingly, so that the energy bandgaps of barrier layer 231 is less than the energy bandgaps of first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230, and make the light of barrier layer 231, first active layer 232 and second active layer, 233 emission predetermined wavelengths.More specifically, at described In
1-xGa
xThe x value is big more among the N, and then the energy bandgaps of active layer reduces accordingly.That is, at described In
1-xGa
xIn the N material, the content of In is few more, and the energy bandgaps of corresponding active layer is big more.If the content of In is reduced, only need the In source flux to be reduced or the flow in Ga source is reduced.
In the present embodiment, material component between described a plurality of barrier layer 231 is all identical, as long as in the process of making barrier layer 231, adopt same process conditions can make the material component between a plurality of barrier layers 231 all identical, promptly, make the energy bandgaps between a plurality of barrier layers 231 all identical, thereby make a plurality of barrier layers 231 all launch purple light; In like manner, the material component between a plurality of first active layers 232 is all identical, all launches blue light; Material component between second active layer 233 is also identical, all transmitting green light.Certainly, the present invention is not limited to foregoing description, can also control the component of each layer, thereby control its radiative wavelength by improving or reduce the mode of epitaxial growth temperature.
The embodiment of the invention also provides a kind of light-emitting diode that comprises described multi-quantum pit structure.Specifically please refer to Fig. 7, it is the generalized section of the light-emitting diode of the embodiment of the invention.
As shown in Figure 7, described light-emitting diode 20 comprises: substrate 200; Be formed at first conductive type semiconductor layer 220, second conductive type semiconductor layer 240 and multi-quantum pit structure 230 on the substrate 200, described multi-quantum pit structure 230 is arranged between described first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230, because the energy bandgaps of barrier layer 232 is less than the energy bandgaps of first conductive type semiconductor layer 220 and second conductive type semiconductor layer 230, can prevent the charge carrier escape effectively, improve the compound probability in electronics and hole, and then improve the internal quantum efficiency of light-emitting diode; And, described barrier layer 231 emission purple lights, described first active layer, 232 emission blue lights, described second active layer, 233 transmitting green lights, therefore the light-emitting diode that comprises described multi-quantum pit structure is cold white light LEDs, has that volume is little, less energy consumption, response is fast, the life-span is long, advantage such as pollution-free.
Preferably, in the light-emitting diode 20 that provides in the present embodiment, also comprise resilient coating 210, described resilient coating 210 is between the substrate 200 and first conductive type semiconductor layer 220, described resilient coating 210 can improve lattice constant mismatch and the stress problem between substrate 200 and the gallium nitride material, the material of described resilient coating 210 is preferably n type indium nitride or n type carborundum, to obtain preferable conductive effect.
Preferably, in the light-emitting diode 20 that provides in the present embodiment, also comprise transparency conducting layer 250, described transparency conducting layer 250 is positioned on described second conductive type semiconductor layer 240, because the conductivity of p type gallium nitride is smaller, therefore at the current-diffusion layer of second conductive type semiconductor layer, 240 surface deposition layer of metal, help to improve conductivity, the material of described transparency conducting layer 250 for example is the Ni/Au material.
In the light-emitting diode 20 that provides in the present embodiment, described first conduction type is the n type, and described second conduction type is the p type.Described light-emitting diode 200 comprises that also first electrode 260, second electrode 270 and the degree of depth extend to the opening of first conductive type semiconductor layer 220, wherein, first electrode 260 is positioned at described opening, be used to connect first conductive type semiconductor layer 220 and the power cathode, second electrode 270 is positioned at transparency conducting layer 250 tops, be used to connect transparency conducting layer 250 and positive source, thereby form the light emitting diode construction (being also referred to as L type structure) of level.In the light emitting diode construction of level, whether conduct electricity and no requirement (NR) for substrate, therefore, described substrate promptly can be silicon substrate, silicon carbide substrates or the gallium nitride substrate that can conduct electricity, and also can be the Sapphire Substrate that can not conduct electricity.
Need to prove that in another specific embodiment of the present invention, described first electrode 260 also can be positioned on the surface of substrate 200 away from first conductive type semiconductor layer 220, is used to connect first conductive type semiconductor layer 220 and the power cathode; Second electrode 270 is positioned at the transparency conducting layer top, is used to connect transparency conducting layer 250 and positive source, thereby forms vertical light emitting diode construction (being also referred to as V-structure).Described light-emitting diode is used for when luminous, and LED core links to each other with positive source by the second conduction type electrode 260, links to each other with power cathode by the first conduction type electrode 270.Than the light emitting diode construction of level, vertical light emitting diode construction radiating effect is better, and helps saving chip area, improves the chip utilance.Be understandable that if form vertical light emitting diode construction, substrate must be the substrate that can conduct electricity, for example, silicon substrate, silicon carbide substrates or gallium nitride substrate.
The present invention also provides a kind of light emission diode package member that comprises described light-emitting diode.Specifically please refer to Fig. 8, it is the generalized section of the light emission diode package member of the embodiment of the invention.Described light emission diode package member 20 ' comprising: light-emitting diode 20; And the fluorescent material (not shown among Fig. 8) that is arranged on light-emitting diode 20 exiting surfaces, so that the light of predetermined color to be provided.The present invention can produce the light of required predetermined color by at light-emitting diode 20 exiting surfaces fluorescent material being set, and improves light utilization efficiency.
Specifically, since barrier layer 231 emission purple lights, first active layer, 232 emission blue lights, second active layer, 233 transmitting green lights, therefore light-emitting diode 20 is cold white light LEDs, can apply purple light excited fluorescent material at the exiting surface of light-emitting diode 20, to form warm white LED.
In the present embodiment, described light emission diode package member 20 ' also comprises the epoxy resin 30 that covers light-emitting diode 20 exiting surfaces, and described fluorescent material can be coated in epoxy resin 30 surfaces.Can pass through known method for packing,, not repeat them here at light-emitting diode 20 surface-coated epoxy resin.
Need to prove, fluorescent material set-up mode of the present invention is not limited to foregoing description, also can in the process of preparation epoxy resin, directly mix fluorescent material, the epoxy resin that will mix fluorescent material again covers light emitting surface of light emitting diode, also can be indirect reach the purpose that fluorescent material is arranged on light emitting surface of light emitting diode.
Perhaps, described fluorescent material and fluorescent material are modulated with glue, made fluorescent glue, more described fluorescent glue is coated on the light emitting surface of light emitting diode, also can reach same purpose.Utilisation point glue machine is coated in described fluorescent glue on the light emitting surface of light emitting diode, and then reaches indirectly fluorescent material is arranged on purpose on the exiting surface of light-emitting diode.
More specifically, can perhaps apply purple light excited fluorescent material, thereby produce warm white by in epoxy resin, mixing purple light excited fluorescent material at epoxy resin surface.And, can realize controlling in a big way the color developing of white light by the consumption of the purple light excited fluorescent material of control.In addition, can adopt known purple light excited fluorescent material, not give unnecessary details the concrete composition of fluorescent material at this.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (22)
1. multi-quantum pit structure, described multi-quantum pit structure is arranged between first conductive type semiconductor layer and second conductive type semiconductor layer, described multi-quantum pit structure comprises a plurality of barrier layers and first active layer and second active layer that are separated by barrier layer, described barrier layer emission purple light, described first active layer emission blue light, the described second active layer transmitting green light, wherein, the energy bandgaps of described barrier layer is less than the energy bandgaps of first conductive type semiconductor layer and second conductive type semiconductor layer.
2. multi-quantum pit structure as claimed in claim 1 is characterized in that, described barrier layer, first active layer and second active layer constitute by the III-V compounds of group.
3. multi-quantum pit structure as claimed in claim 2 is characterized in that, described first conductive type semiconductor layer and described second conductive type semiconductor layer are made of GaN, and described barrier layer is by In
1-zGa
zN constitutes, and described first active layer is by In
1-xGa
xN constitutes, and described second active layer is by In
1-yGa
yN constitutes, wherein, and 0.7≤x≤0.9,0.6≤y≤0.8, and satisfy 0＜y＜x＜z＜1.
4. multi-quantum pit structure as claimed in claim 1 is characterized in that, the quantity of described first active layer and second active layer is 2～100.
5. multi-quantum pit structure as claimed in claim 1 is characterized in that, described first active layer and second active layer are arranged alternately.
6. as any described multi-quantum pit structure in claim 1 or 5, it is characterized in that the thickness of described barrier layer is 8～12nm, the thickness of described first active layer and second active layer is 2～5nm.
7. the manufacture method of a multi-quantum pit structure as claimed in claim 1 comprises:
Between first conductive type semiconductor layer and second conductive type semiconductor layer, alternately form the barrier layer of a plurality of emission purple lights, first active layer of emission blue light and second active layer of transmitting green light;
Wherein, when forming described barrier layer, make the energy bandgaps of the energy bandgaps of described barrier layer less than described first conductive type semiconductor layer and second conductive type semiconductor layer.
8. manufacture method as claimed in claim 7 is characterized in that, utilizes the mode of metallo-organic compound chemical vapour deposition (CVD), alternately forms the barrier layer of a plurality of emission purple lights, first active layer of emission blue light and second active layer of transmitting green light.
9. as claim 7 or 8 described manufacture methods, it is characterized in that described barrier layer, first active layer and second active layer constitute by the III-V compounds of group.
10. manufacture method as claimed in claim 9 is characterized in that, described first conductive type semiconductor layer and second conductive type semiconductor layer are made of GaN, and described barrier layer is by In
1-zGa
zN constitutes, and described first active layer is by In
1-xGa
xN constitutes, and described second active layer is by In
1-yGa
yN constitutes, wherein, and 0.7≤x≤0.9,0.6≤y≤0.8, and satisfy 0＜y＜x＜z＜1.
11. manufacture method as claimed in claim 7 is characterized in that, the quantity of described first active layer and second active layer is 2～100.
12. manufacture method as claimed in claim 7 is characterized in that, the thickness of described barrier layer is 8～12nm, and the thickness of described first active layer and second active layer is 2～5nm.
13. a light-emitting diode comprises:
First conductive type semiconductor layer and second conductive type semiconductor layer; And
As any described multi-quantum pit structure in the claim 1～6.
14. light-emitting diode as claimed in claim 13 is characterized in that, described light-emitting diode also comprises substrate, resilient coating and transparency conducting layer, wherein,
Described resilient coating is between the described substrate and first conductive type semiconductor layer;
Described transparency conducting layer is positioned on described second conductive type semiconductor layer.
15. light-emitting diode as claimed in claim 14 is characterized in that, described first conduction type is the n type, and described second conduction type is the p type.
16. light-emitting diode as claimed in claim 15 is characterized in that, described light-emitting diode comprises that also first electrode, second electrode and the degree of depth extend to the opening of first conductive type semiconductor layer, wherein,
Described first electrode is positioned at opening, is used to connect first conductive type semiconductor layer and a power cathode;
Described second electrode is positioned at the transparency conducting layer top, is used to connect a transparency conducting layer and a positive source.
17. light-emitting diode as claimed in claim 16 is characterized in that, described light-emitting diode also comprises first electrode and second electrode, wherein,
Described first electrode is positioned on the surface of described substrate away from first conductive type semiconductor layer, is used to connect first conductive type semiconductor layer and a power cathode;
Described second electrode is positioned at the transparency conducting layer top, is used to connect a transparency conducting layer and a positive source.
18. a light emission diode package member comprises:
As any described light-emitting diode in the claim 13～17; And
Be arranged on the fluorescent material of described light emitting surface of light emitting diode, so that the light of predetermined color to be provided.
19. light emission diode package member as claimed in claim 18 is characterized in that, also comprises the epoxy resin that covers described light emitting surface of light emitting diode, described fluorescent material is coated in described epoxy resin surface.
20. light emission diode package member as claimed in claim 18 is characterized in that, also comprises the epoxy resin that covers described light emitting surface of light emitting diode, described fluorescent material is incorporated in the described epoxy resin.
21. light emission diode package member as claimed in claim 18 is characterized in that, described fluorescent material and fluorescent material are modulated into fluorescent glue with glue, more described fluorescent glue are coated in light emitting surface of light emitting diode.
22., it is characterized in that described fluorescent material is purple light excited fluorescent material, so that warm white to be provided as any described light emission diode package member in the claim 18 to 21.
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| CN 201110008815 CN102122690A (en) | 2011-01-14 | 2011-01-14 | Multi-quantum well structure, light-emitting diode and packaging part of light-emitting diode |
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| CN 201110008815 CN102122690A (en) | 2011-01-14 | 2011-01-14 | Multi-quantum well structure, light-emitting diode and packaging part of light-emitting diode |
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| CN105409905A (en) * | 2014-07-24 | 2016-03-23 | 首尔伟傲世有限公司 | Insect trap using UV LED lamp |
| CN105895768A (en) * | 2016-06-16 | 2016-08-24 | 厦门乾照光电股份有限公司 | Well-doped light emitting diode |
| CN110120447A (en) * | 2019-05-23 | 2019-08-13 | 福建兆元光电有限公司 | Nitride semiconductor luminescent element |
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| CN1937264A (en) * | 2005-09-21 | 2007-03-28 | 中国科学院物理研究所 | White light-emitting diode and its preparing method |
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Application publication date: 20110713 |