CN102150278A - 使用注入和退火方法的太阳能电池-选择性发射极的形成 - Google Patents
使用注入和退火方法的太阳能电池-选择性发射极的形成 Download PDFInfo
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Abstract
一种形成太阳能电池的方法,该方法包括:提供具有预先掺杂区域的半导体晶片;执行掺杂物至该半导体晶片中的第一离子注入,以在预先掺杂区域之上形成第一掺杂区域,其中第一离子注入具有浓度比对深度分布;以及执行掺杂物至该半导体晶片中的第二离子注入,以在预先掺杂区域之上形成第二掺杂区域,其中所述第二离子注入具有与第一离子注入的浓度比对深度分布不同的浓度比对深度分布,其中第一掺杂区域和第二掺杂区域中的至少一个区域被配置成在接收到光时生成电子-空穴对,并且其中第一离子注入和第二离子注入彼此独立地执行。
Description
相关申请的交叉引用
本申请要求对通过引用整体并入本文之中的以下所有共同未决申请的优先权,这些申请包括:美国临时申请序号61/131,687,提交于2008年6月11日,名称为“SOLAR CELL FABRICATION USINGIMPLANTATION”;美国临时申请序号61/131,688,提交于2008年6月11日,名称为“APPLICATION SPECIFIC IMPLANT SYSTEMFOR USE IN SOLAR CELL FABRICATIONS”;美国临时申请序号61/131,698,提交于2008年6月11日,名称为“FORMATION OFSOLAR CELL-SELECTIVE EMITTER USING IMPLANTATION ANDANNEAL METHODS”;美国临时申请序号61/133,028,提交于2008年6月24日,名称为“SOLAR CELL FABRICATION WITHFACETING AND IMPLANTATION”;以及美国临时申请序号61/210,545,提交于2009年3月20日,名称为“ADVANCED HIGHEFFICIENCY CRYSTALLINE SOLAR CELL FABRICATIONSMETHOD”。
技术领域
本发明总体上涉及太阳能电池领域。更具体而言,本发明涉及太阳能电池器件及其形成方法。
背景技术
在太阳能电池的制作中有两个主要步骤。第一步骤是形成衬底,所述衬底被配置为在接收到光时产生电子-空穴对。这样的衬底的一个例子包括p-n结。第二步骤是在衬底上形成导电接触,所述导电接触被配置为传导来自单独电子的电荷,从而使电荷可被传导和带走。
目前,在第一步骤中使用扩散来形成p-n结。在衬底的表面上放置掺杂物糊剂。随后对其进行加热,从而将掺杂物驱入特定深度中并形成结。备选地,向衬底引入含磷物占主导地位的气体。接下来使用加热将含磷物驱入衬底中。在第二步骤中,将接触线丝网印刷至结的表面上。
从表面到衬底中的掺杂物扩散的使用受到多种问题的困扰。主要问题之一是,随着掺杂物被驱入材料的主体中,未活化的掺杂物在接近表面之处的聚积,这可能改变衬底的不同深度和区域处的电阻率,从而导致不同的光吸收和电子-空穴生成性能。特别是,遇到的一个问题是由于所谓“死层”的形成而导致对蓝光缺乏利用。
此外,随着线宽和晶片厚度越来越小,掺杂物在整个衬底上的横向定位特别困难。例如,对于选择性发射极应用而言,预计太阳能电池产业需要从200微米降至小于50微米的掺杂物横向放置。这样的放置,对于目前的扩散和丝网印刷方法而言,可能是非常困难的。另外,随着晶片越来越薄,从当今的150-200微米降至小于20微米,垂直和批量扩散以及丝网印刷变得极其困难,乃至是不可能的。
此外,扩散的使用没有能够提供理想的掺杂物浓度水平以及由此产生的电阻率。太阳能电池的电子-空穴对生成区域最好具有低掺杂物浓度和高电阻率水平,而太阳能电池的(靠近或位于表面)接触区域最好具有高掺杂物浓度和低电阻率水平。扩散无法单独处理各个区域并且对于两种区域都受限于大约50欧姆/平方(Ω/□)的薄层电阻,这对于电子-空穴生成区域不太够高,而对于接触区域又不太够低。
发明内容
本发明提供用于解决因较为陈旧的太阳能衬底掺杂工艺而导致的各种欧姆损耗的方法。本发明涉及改动衬底、接触、母线和接触指的电阻,改动金属硅界面的接触电阻,改动背面金属化的电阻,以及在网格接触之下和接触指之间实现期望的电阻率。另外,选择性发射极的有利形成及其提高性能的能力通过使用本发明可能得以实现。本发明能够被应用到生长出的单独的或单晶硅、聚集的或多晶硅,以及超薄硅或者超薄薄膜沉积硅或者其他用于太阳能电池形成和其他应用的材料。其还能够被扩展到用于任何其他在结和/或接触的制造中所使用的材料的原子种类放置。
本发明可以采用专用离子注入和退火系统和方法,以提供材料主体内的和跨衬底横向布置的掺杂物的适当的和独立的放置和浓度。掺杂物的准确使用和高度准确地放置以及掺杂物原子分布的调整在下文中进行描述。描述了解决对网格线下的重度掺杂(10-40欧姆/平方)区域的需要的方法,以及实现网格接触指之间的轻度掺杂(80-160欧姆/平方)区域的方法。通过使用本发明可以实现对于网格线下的接触区域而言为大约25欧姆/平方(这对应于大约每立方厘米1E20的掺杂物浓度)以及对于网格接触指之间和/或接触区域之下的电子-空穴对生成区域而言为大约100欧姆/平方(这对应于大约每立方厘米1E19的掺杂物浓度)的理想薄层电阻水平。
此外,通过使用经调整的参数,原子掺杂物分布同时匹配用于在适当深度相对于衬底本底掺杂水平提供电气结,以及提供在表面上形成接触所需的电阻率。如果需要的话,还利用对逆掺杂和平坦原子分布(箱式结(box junction))的使用。该方法提供用于形成选择性发射极和适当的电阻率的简单有效并且成本低廉的手段,从而增强太阳能电池的效率性能。
可以通过进行长时间退火的传统熔炉退火的使用,快速退火(例如快速热退火(RTA))的使用,或者非常快速的升温和冷却方法(例如激光退火、闪光灯退火)的使用,或者在太阳能电池制造结束时采用烧结炉(其在结合本发明的注入使用时可以采用较低的温度),来对掺杂物进行活化。退火时间和温度的受控使用提供对衬底内的原子分布的进一步强化。在本发明中,优选地使用时间较短的退火,以确保掺杂物放置不被改变,但仍实现充分的或接近充分的活化。
在本发明的一个方面中,提供有一种形成太阳能电池的方法。提供具有预先掺杂区域的半导体晶片。执行掺杂物到半导体晶片中的第一离子注入,以在预先掺杂区域之上形成第一掺杂区域。第一离子注入具有浓度比对深度的分布。执行掺杂物到半导体晶片中的第二离子注入,以在预先掺杂区域之上形成第二掺杂区域。第二离子注入具有与第一离子注入不同的浓度比对深度的分布。第一掺杂区域和第二掺杂区域中的至少一个区域被配置为在接收到光时生成电子-空穴对,并且第一离子注入和第二离子注入相互独立地执行。
在一些实施方式中,在预先掺杂区域与被配置用以生成电子-空穴对的第一掺杂区域和第二掺杂区域中的至少一个区域之间形成p-n结。在一些实施方式中,半导体晶片被提供作为硅衬底。
在一些实施方式中,通过第一离子注入形成的第一掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻。在一些实施方式中,通过第二离子注入形成的第二掺杂区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。在一些实施方式中,通过第一离子注入形成的第一掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻,并且通过第二离子注入形成的第二掺杂区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
在一些实施方式中,所述方法还包括在半导体晶片的表面上安放金属接触线的步骤,其中金属接触线被配置成传导来自第一掺杂区域和第二掺杂区域中的至少一个区域的电荷。在一些实施方式中,预先掺杂区域是p型掺杂的,而第一掺杂区域和第二掺杂区域是n型掺杂的。在一些实施方式中,该方法还包括在离子注入步骤中的至少一个步骤之后,对半导体晶片执行退火过程的步骤。
在本发明的另一方面中,提供一种形成太阳能电池的方法。提供具有预先掺杂区域的半导体晶片。通过执行掺杂物到半导体晶片中的第一离子注入而在半导体晶片中预先掺杂区域之上形成均匀掺杂区域,其中在预先掺杂区域与均匀掺杂区域之间形成p-n结,并且均匀掺杂区域被配置成在接收到光时生成电子-空穴对。通过执行掺杂物到半导体晶片中的第二离子注入而在半导体晶片中均匀掺杂区域之上形成多个选择性掺杂区域。第一离子注入和第二离子注入相互独立地执行,并且选择性掺杂区域具有比均匀掺杂区域更高的掺杂物浓度。
在一些实施方式中,提供半导体晶片作为硅衬底。在一些实施方式中,通过第一离子注入形成的均匀掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻。在一些实施方式中,通过第二离子注入形成的选择性掺杂区域中的每一个区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。在一些实施方式中,通过第一离子注入形成的均匀掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻,并且通过第二离子注入形成的选择性掺杂区域中的每一个区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
在一些实施方式中,该方法还包括在半导体晶片的表面上安放金属接触线的步骤,其中金属接触线在多个选择性掺杂区域之上对齐,并且被配置成传导来自多个选择性掺杂区域的电荷。
在一些实施方式中,该方法还包括在靠近半导体晶片的表面之处形成金属种层的步骤,其中金属种层被配置成充当选择性掺杂区域与金属接触线之间的过渡层。在一些实施方式中,金属种层包括硅化物。在一些实施方式中,形成金属种层的步骤包括将至少一种材料离子注入到半导体晶片中,其中该至少一种材料从包括Ni、Ta、Ti、W和Cu的组中选择。
在一些实施方式中,预先掺杂区域是p型掺杂的,而均匀掺杂区域和选择性掺杂区域是n型掺杂的。在一些实施方式中,该方法还包括在离子注入步骤中的至少一个步骤之后,对半导体晶片执行退火过程的步骤。在一些实施方式中,该方法还包括在均匀掺杂区域之上形成防反射涂敷层的步骤。
在一些实施方式中,使用掩膜将选择性掺杂区域注入在半导体晶片中预定位置上,其中掩膜包括与该预定位置对齐的开口。在一些实施方式中,掩膜是在第二离子注入期间安放在半导体晶片表面上的接触掩膜。在一些实施方式中,掩膜是在第二离子注入期间安放在半导体晶片表面之上的预定距离处的物理掩膜。在一些实施方式中,使用整形的离子射束将选择性掺杂区域注入在半导体晶片中预定位置上,其中整形的离子射束与该预定位置对齐。在一些实施方式中,选择性掺杂区域彼此横向隔开范围在大约1mm至大约3mm的距离。
在本发明的又一方面中,提供有一种太阳能电池。该太阳能电池包括:半导体晶片、均匀掺杂区域、p-n结、多个选择性掺杂区域,以及多个金属接触。半导体晶片具有本底掺杂区域。均匀掺杂区域通过将掺杂物离子注入到半导体晶片中而形成于半导体晶片中本底掺杂区域之上,并且具有在大约80欧姆/平方与大约160欧姆/平方之间的薄层电阻。p-n结形成于均匀掺杂区域与本底掺杂区域之间。选择性掺杂区域通过将掺杂物离子注入到半导体晶片中而形成于半导体晶片中均匀掺杂区域之上。选择性掺杂区域中的每一个区域都具有在大约10欧姆/平方与大约40欧姆/平方之间的薄层电阻。金属接触安放在半导体晶片的表面上,并且在多个选择性掺杂区域之上对齐。金属接触被配置成传导来自多个选择性掺杂区域的电荷。
在一些实施方式中,半导体晶片是硅衬底。在一些实施方式中,通过第一离子注入形成的均匀掺杂区域具有大约100欧姆/平方的薄层电阻。在一些实施方式中,通过第二离子注入形成的选择性掺杂区域中的每一个区域具有大约25欧姆/平方的薄层电阻。
在一些实施方式中,太阳能电池还包括安放在选择性掺杂区域之上和金属接触之下的金属种层。在一些实施方式中,金属种层包括硅化物。在一些实施方式中,金属种层包括至少一种从包括Ni、Ta、Ti、W和Cu的组中选择的材料。
在一些实施方式中,预先掺杂区域是p型掺杂的,而均匀掺杂区域和选择性掺杂区域是n型掺杂的。在一些实施方式中,太阳能电池还包括安放于均匀掺杂区域之上的防反射涂敷层。在一些实施方式中,选择性掺杂区域彼此横向隔开范围在大约1mm至大约3mm的距离。
附图说明
图1A为根据本发明原理的太阳能电池的一个实施方式的平面图。
图1B为根据本发明原理的太阳能电池的一个实施方式的截面侧视图。
图2示出了根据本发明原理的形成太阳能电池的方法的一个实施方式。
图3示出了根据本发明原理的均匀注入的一个实施方式。
图4A-图4C示出了根据本发明原理的选择性注入的不同实施方式。
图5示出了根据本发明原理的接触种子注入的一个实施方式。
图6示出了根据本发明原理的金属接触形成的一个实施方式。
图7示出了根据本发明原理的防反射表面涂敷层形成的一个实施方式。
图8示出了根据本发明原理的分布调整图的一个实施方式。
图9为示出使用扩散进行掺杂的太阳能电池的分布调整能力中的不足之处的图示。
图10A-图10B为示出使用根据本发明原理的离子注入进行掺杂的太阳能电池的分布调整能力中的优势的图示。
具体实施方式
为使本领域中一般技术人员能够做出和使用本发明而呈现以下描述,并且该描述是以专利申请及其要求的形式来提供的。对所述实施方式的各种修改对于本领域中技术人员将会是显而易见的,并且本文中的通用原理可以应用于其它实施方式。因此,本发明并非只限于所示实施方式,而是应被给予同本文所述原理及特征相符的最广范围。
图1A-图10B示出了太阳能电池器件的实施方式、其特性以及其形成,并且相似地编号相似元件。
图1A和图1B分别示出了根据本发明原理的、按不同比例绘制的太阳能电池100的一个实施方式的平面图和截面侧视图。太阳能电池100包括晶片110。在一些实施方式中,晶片110为156mm x 156mm晶片。优选地,晶片110由半导体材料,例如(单晶或多晶)硅形成,并且包括p-n结。p-n结形成自彼此相邻安放的p型掺杂区域150和n型掺杂区域160。金属接触线120印刷在,或者除此之外形成在晶片110的表面上。可以设想,接触线120也可以由除金属以外的导电材料形成。导电接触指130也安放在晶片110的表面上,用以收集来自接触线的电荷并将其带出到外部负载。尽管在图1A-图1B中将接触线表示为五条垂直线120,并将导电接触指表示为两条水平线130,但可以设想到,也可采用接触120和接触指130的其它数量、尺寸、形状、方向和布置。
在工作中,当光通过接触线120与接触指130之间的暴露表面140进入到晶片110的半导体材料中时,其被转换为电子-空穴对——通常在n型掺杂区域160内。电子沿一个方向移动,被吸引入接触120中,而空穴沿另一方向移动,朝向p型掺杂区域150。特定区域内的掺杂物越多,在该区域中重新捕获的电子-空穴对就越多,从而造成更多的电损耗。因此,控制不同区域的掺杂水平是有益的。在光将在其中被转换为电子-空穴对的区域中,掺杂水平应当相对较低。在电荷将在其中经过接触线120的区域中,掺杂水平应当较高。在图1B中,n型掺杂区域160内的阴影区域代表用低水平的n型掺杂物进行了均匀掺杂的均匀发射极区域。安放于接触线120下面靠近晶片110的表面处的经构图的区域170代表用高水平的n型掺杂物进行了选择性掺杂的选择性发射极区域。
作为最小化均匀发射极区域的掺杂物浓度(从而,最大化电阻率)以及最大化选择性发射极区域的掺杂物浓度(从而,最小化电阻率)的结果,太阳能电池从均匀发射极区域通过选择性发射极区域向接触线转移生成的电子的能力得到了提高,而因电子-空穴对复合的电损耗的风险则被降低。此外,尽管更大的接触线可以传导更多的电,但它们也阻挡更多的光进入太阳能电池并被转换为电子。通过最大化靠近接触线的选择性发射极区域的掺杂物浓度,事实上可以将接触线制得更薄,从而允许更多光进入太阳能电池,并且提高太阳能电池从电子-空穴对生成区域向接触线转移电子的能力。
在一些实施方式中,将均匀掺杂区域掺杂为具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻,而将选择性掺杂区域掺杂为具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。在一些实施方式中,将均匀掺杂区域掺杂为具有大约100欧姆/平方的薄层电阻,而将选择性掺杂区域掺杂为具有大约25欧姆/平方的薄层电阻。
如前面所提到的,现有技术已无法获得这些配置。为了实现这些或类似的掺杂物浓度和薄层电阻水平,以及其所伴随的益处,本发明在这些不同区域的形成中采用独立执行的离子注入。
图2示出了根据本发明原理的、形成太阳能电池的方法200的一个实施方式。尽管图2示出特定步骤以特定顺序执行的一个实施方式,但可以设想,步骤的顺序在根据本发明原理的其它实施方式中可以改变。此外,术语“第一”和“第二”连同“离子注入”和“掺杂区域”在权利要求书中的使用不应被解释为表示特定顺序,除非权利要求书另有明确阐述。术语“第一”和“第二”只用来反映注入和区域的独立性。
在步骤210中,提供半导体晶片。在一些实施方式中,半导体晶片被提供作为(具有单晶或者多晶结构的)硅衬底。半导体晶片是在已被掺杂的情况下提供的。在一些实施方式中,用p型掺杂物来预先掺杂半导体晶片,从而产生p型本底区域,在其上可以形成太阳能电池的其它方面。在其它实施方式中,用n型掺杂物来预先掺杂半导体晶片,从而产生n型本底区域,在其上可以形成太阳能电池的其它方面。在一些实施方式中,预先掺杂本底区域被掺杂成具有范围在大约30欧姆/平方至大约70欧姆/平方的薄层电阻。
在步骤220中,使用离子注入过程,以低浓度水平的掺杂物来均匀地掺杂半导体晶片。在一些实施方式中,该步骤通过掺杂物在预先掺杂的半导体晶片中的毯式注入而实现。图3示出了到与图1B中的晶片110类似的半导体晶片310中的掺杂物均匀离子注入305的一个实施方式。该离子注入305在半导体晶片310中预先掺杂区域350之上形成均匀掺杂区域360。该毯式均匀层360被配置成因光的入射而生成电子-空穴对。为了不对电荷载流子的形成产生负面影响,该均匀层360需要低掺杂水平(高电阻率)。n或p型掺杂物以低或中等掺杂水平深度注入到晶片310中,从而形成与预先掺杂材料相对的结。在一些实施方式中,该结为形成于预先掺杂区域350与均匀掺杂区域360之间交界处的p-n结。优选地,预先掺杂区域350是p型掺杂的,而均匀掺杂区域360是n型掺杂的。然而,其他掺杂配置也在本发明的范围之内。
如根据制造商要求,掺杂物被注入到预定深度,并且结在此预定深度形成。在一些实施方式中,掺杂物的深度和水平由具体PV制造商的电阻率和结的需求而确定。为了该目的,可以使用各种模型来预先分析和形成经调整的原子分布。可以将该信息馈入到注入和退火系统中从而满足要求。
结与晶片表面的距离由在掺杂物离子注入期间用于离子射束中的能量确定。在一些实施方式中,能量根据太阳能电池器件的期望规格,在1KeV至150KeV的范围之中。任何用掺杂物进行注入的区域,无论其是均匀注入的还是选择性注入的,其掺杂物浓度以及因此的薄层电阻,可以由离子注入系统的射束电流来确定。在离子注入系统中被电离用于离子射束的气体的种类确定掺杂将会是n型还是p型。例如,含磷物和含砷物各自造成n型掺杂,而硼则造成p型掺杂。
可以设想,在本发明中可以使用各种离子注入系统。在一些实施方式中,采用等离子注入技术。在一些实施方式中,使用具有高生产率的注入系统(未示出)来掺杂不同区域。这样的注入系统是共同未决美国临时申请序号61/131,688(提交于2008年6月11日,名称为“APPLICATIONS SPECIFIC IMPLANT SYSTEM FOR USE INSOLAR CELL FABRICATIONS”)的主题,其就如被阐述在此那样,通过引用整体并入本文。在一些实施方式中,使用聚点射束或者扩宽射束来以每小时一千或更多个晶片的生产率来提供跨晶片的完全覆盖。
在步骤230中,使用直接和/或等离子体离子注入过程、以高掺杂物浓度水平来选择性地掺杂半导体晶片。步骤230中所使用的离子注入过程优选地独立于步骤220中所使用的离子注入过程。
在该选择性掺杂步骤中,通过调节注入能量和剂量而选择适当的深度和掺杂水平,以在衬底的表面上或者靠近表面处提供非常高的掺杂浓度(低电阻率)。这可以通过在不同能量和剂量上或者作为用以提供经调整的分布的连续变化的多次注入而实现,这将在以下参考图8-图10B来进一步详细讨论。
选择性掺杂的目的是实现随后的接触形成所需的表面电阻率。随着对接触制造的要求从丝网印刷转移到光刻或喷墨印刷或者其他新颖方法,可以调节表面电阻率来满足这些要求。此外,如果部署了任何表面钝化方法,那么可以采用注入条件以应对这样的变化。
掺杂物在随后的网格线下方适当横向位置、并且以适当浓度水平的放置是极为有利的。多个高度掺杂区域在半导体晶片中均匀掺杂区域之上的形成可以通过各种方法来实现。图4A-图4C示出了根据本发明原理的选择性注入的不同实施方式。
图4A示出了其中离子注入405通过在注入系统中使用仅刻划所需注入区域470的物理掩膜层472而得以执行的一个实施方式。物理掩膜层472安放在半导体晶片310的表面之上的预定距离处。在一些实施方式中,离子射束可被整形,如在图4C中所示那样,以提高注入效率。
图4B示出了其中离子注入405通过安放在半导体晶片310的表面上的接触掩膜层474而得以执行的一个实施方式。接触掩膜层474仅刻划所需的注入区域470。在一些实施方式中,接触掩膜层474通过涂敷而形成。例如,接触掩膜层474可以通过使用光刻、丝网印刷步骤或者其他沉积和去除过程来形成。
图4C示出了其中离子射束405被调整为仅掺杂半导体晶片310上的所需注入区域470的一个实施方式。在该实施方式中,形成注入射束405以满足网格线尺寸,从而仅对感兴趣的一个或多个区域进行注入。
值得注意的是,在一些实施方式中,例如在图4A-图4C中,选择性掺杂区域下延至预先掺杂区域350,而在一些实施方式中,例如在图1B中,选择性掺杂区域并不一直下延至预先掺杂区域150。
还应当注意的是,如果需要,可以多次重复注入步骤220和230,以实现期望的结果。
可选地,在步骤235中,接触种层(优选地为金属)注入在选择性掺杂区域之上,以在半导体晶片与最终将会安放在半导体晶片表面上的金属(或者除此之外为导电的)接触之间产生过渡层。该接触种层的形成可以起到影响接触/半导体界面的逸出功的作用,以改善半导体材料与金属接触之间的电接触。图5示出了根据本发明原理的接触种子注入505的一个实施方式。在表面或非常接近表面处并且在选择性掺杂区域470之上的相对高剂量的金属注入580可以形成硅化物层。可以使用各种金属注入,包括但不限于:Ni、Ta、Ti、W和Cu。这样的带隙工程设计可以提高太阳能电池的总体性能。可以使用接触掩膜层576来正确地对齐注入。事实上,可以使用图4A-图4C中所示的任何注入对齐方法(物理掩膜、接触掩膜和物理射束)来正确对齐和形成选择性发射极区域之上的接触种子区域。该过渡层步骤甚至可以用于提高传统发射极性能。在这种情况下,可将注入区域制造得相对略小,以最小化接触泄漏以及肖特基二极管的形成。在包括这些现有技术中的器件在内的每种光伏器件中都存在金属与半导体接触。取决于界面的特性,它们可以表现为肖特基势垒或者表现为欧姆接触。因此,这种界面的控制和管理在太阳能电池性能的提高中是有益的。
在步骤240中,在半导体晶片的表面上放置有金属(或者除此之外为导电的)接触线。在一些实施方式中,金属接触线例如通过印刷,或者使用光刻和镀覆,而形成于半导体晶片的表面上。然而,可以设想,也可以利用其他过程来将金属接触安放到半导体晶片上。图6示出了根据本发明原理的金属接触形成的一个实施方式。金属接触线690已使用与种子注入步骤中所使用的掩膜相类似的接触掩膜576在多个选择性掺杂区域470之上对齐。接触线690被配置成传导来自选择性掺杂区域470的电荷。
可选地,在步骤245中,在均匀掺杂区域之上形成防反射涂敷层。在一些实施方式中,通过在均匀掺杂区域之上沉积防反射涂敷层材料而形成防反射涂敷层。可以用于形成防反射涂敷层的材料包括但不限于SiO2和Si3N4。在一些实施方式中,可以通过向晶片上已经形成的防反射涂敷层应用离子注入而对其进行增强。图7示出了形成于半导体晶片的均匀掺杂区域之上的防反射涂敷层795的一个实施方式。
图7还示出了在选择性掺杂区域470之间间隔的一个实施方式。在一些实施方式中,例如在图7所示的实施方式中,选择性掺杂区域470彼此横向隔开的距离的范围在大约1mm至大约3mm。然而,可以设想,其他间隔尺寸也在本发明的范围之内。
在步骤250中,对晶片执行退火过程。在一些实施方式中,退火步骤将半导体晶片加热至接近但低于其熔点的温度,并且修复由于任何离子注入步骤而在半导体晶片的晶体结构上所造成的破坏。退火步骤可以包括炉式退火。备选地,激光退火或者闪光灯退火可以用来代替炉式退火。尽管图2示出退火步骤在方法的末尾执行,但可以设想,其也可以在任何点上执行。例如,在一些实施方式中,退火过程在离子注入步骤中的任何或者每个步骤之后立即执行,而在其他实施方式中,在所有离子注入都已完成之后执行单个退火过程。退火过程的时机将不会影响随后的步骤处理,不论其为注入步骤还是其他PV制造步骤。
对于一些上述方法,在半导体晶片上提供对准标记可以用来对特征的形成进行对齐。这可以在通过各种方法进行注入之前实现并且取决于PV制造商的能力以及他们的要求。一种简便方法是按照当前半导体对准标记来激光刻划对准标记。然而,光伏应用的要求不像半导体那样严格,因此简单的对准标记就足够了。
还可以横向地调整网格线之下的掺杂,以形成潜在地可以比接触网格线更大或更小的低电阻率区域。这样做可以是有益的,因为其可以降低从网格线到晶片的其余部分的漏电的潜在可能性。这样的泄漏可能降低电池性能的效率。对注入射束尺寸或者物理掩膜的调节可以提供这样的能力。这种泄漏的幅度也可以通过掺杂物的有益横向放置而得以减少或消除。
可以通过使用各种能量(深度)和剂量(掺杂水平)的额外注入来进一步强化原子分布的调整,以实现对于最佳可实现电池性能的最优分布。在一些实施方式中,这样的组合注入是可以提供高生产率和经调整的分布的一系列较低剂量和较快注入。这样的方法可以扩展到箱式结的形成,从而在原子分布中提供具有突然的深结降的平坦顶部分布。备选地,深结可以是缓变的,以提供从高掺杂区域到低掺杂区域的平缓过渡,并因而防止电势垒的形成。
额外注入还可以作为矫正注入,在PV制造过程的末尾使用。这在传统意义上可以是如部署在半导体应用之中的逆注入。其还可以在其中在形成表面和深结电阻率之后进行注入的情况下,或者在最终完成电池制造时使用。如果电池不满足最终测试质量指标,那么可以使用微调注入作为矫正步骤,以提高性能。备选地,如果最终测试显示出不利影响,那么可以使用围绕网格线边缘的非常轻的掺杂来防止进一步泄漏。
本发明通过离子注入对多个独立掺杂物注入的运用使得太阳能电池器件的原子分布能够根据用户的偏好或者要求来进行整形。一些用户可能偏好箱式结(或者箱式分布)作为特定深度中的理想突变结。其他用户可能偏好从表面下至结深度(本底掺杂)的滚动分布。另一组用户可能偏好在浅深度中的极峰分布,其后跟随以一直到本底掺杂的平缓滚动分布。到目前为止,本领域中技术人员还未能实现能够高效地并有效地控制原子分布形状的优点,并且仍然被限制在简单的高斯分布。本发明使用多种具有预定的不同浓度比对深度的分布的独立掺杂物,以根据用户喜好来调整太阳能电池的总原子分布。
图8示出了根据本发明原理的分布调整图示800的一个实施方式。图示800表示太阳能电池关于掺杂物浓度(At./cm3)比对其掺杂物深度(Ang.)的原子分布。总原子分布由线810表示。通过使用具有不同的浓度比对深度分布的多种离子注入,用户可以在预定深度上精确地调节和控制太阳能电池的掺杂物浓度(以及因此的电阻率)。图示800示出三个不同的注入分布812、814和816。这三个分布的组合产生太阳能电池的总分布810。
尽管每个单独注入可限于高斯或伪高斯分布,但本发明将它们结合起来,以有效地调整总原子分布的形状。在通过利用多个独立的注入来控制总原子分布时,本发明允许用户有效地控制结深度840,一种类型的注入掺杂物(例如n型掺杂物)在该结深度840处与预先掺杂本底区域820的掺杂物(例如p型掺杂物)相遇。用户还能够控制太阳能电池的表面上或者靠近表面处的掺杂物浓度830。本发明允许用户对表面浓度830和结深度840进行相互独立的控制。在一些实施方式中,原子分布被调整成具有范围在大约0.01微米至大约0.5微米的结深度。在一些实施方式中,原子分布被调整成具有范围在大约5E18At./cm3到大约4.8E21At./cm3的表面浓度。然而,可以设想,可以将原子分布调整成具有不同的结深度和表面浓度。
在现有技术中,原子分布的调节是受限的。图9为示出使用扩散进行掺杂的太阳能电池的分布调整能力中的不足之处的图示900。在此,线910代表太阳能电池的原子分布。使用扩散来掺杂半导体晶片使得用户无法独立地控制表面浓度和结深度。用户被限制在只是通过将浓度和深度一同增大到线910’而使分布910更深,或者通过将浓度和深度一同减小到线910”而使分布910更浅。用户无法在改变原子分布形状的同时,在原子分布的一个方面上较之其他方面产生更大的影响。
图10A-图10B为示出使用根据本发明原理的离子注入进行掺杂的太阳能电池的分布调整能力中的优势的图示。在图10A的图示1000中,示出了对于使用现有技术方法形成的太阳能电池的、就浓度比对深度方面的原子分布1010。在此,分布1010限于高斯分布,使得电子-空穴对生成区域中所产生的电子难以行进到接触。分布1010的陡坡反映了随着电子向晶片表面处的导电接触行进,在掺杂物浓度(以及因此的电阻率)中的显著增加。该陡坡可以使得电子更加难以到达接触,因而导致不希望的电损耗。
在图10B的图示1000’中,示出了对于使用本发明的多离子注入形成的太阳能电池的、就浓度比对深度方面的原子分布1010’。可以对分布1010’的进行整形,以形成在电子向着半导体晶片表面上的接触行进时,掺杂物浓度更加平缓(较不陡峭)的增高。原子分布的这种调整是通过使用多次离子注入来独立地控制结深度和表面浓度以及介于此二者之间的任何物而成为可能的。
在图8中,不同注入812、814和816可以确定太阳能电池的不同方面。例如,在一些实施方式中,线812(中程注入)确定均匀发射极,而线814和816则是作为一系列选择性注入来添加的,以提供选择性发射极区域。这些注入步骤可以在无任何遮盖的情况下或者通过任何防反射遮盖(例如,氮化物、氧化物或者任何其它薄膜)在毯式衬底上执行,以及在太阳能电池制造所需要的表面特定结构上执行。在特定结构的情况中,离子注入提供与表面轮廓的良好粘合,并因此改善接触形成。图8的图示800示出了表面涂敷层850,例如前面所讨论过的防反射涂敷层。该涂敷层可以是任何厚度的。
如上文所讨论,本发明的实施方式非常适合于制造太阳能电池器件。以下如在本文中所阐述那样,特此通过引用整体并入本文之中的共同未决专利申请描述了制造太阳能电池器件的方法,这些申请包括:由Babak Adibi和Edward S.Murrer提交于2009年6月11日的“SOLAR CELL FABRICATION USING IMPLANTATION”,律师案卷号为SITI-00100;由Babak Adibi和Edward S.Murrer提交于2009年6月11日的“APPLICATIONS SPECIFIC IMPLANT SYSTEMFOR USE IN SOLAR CELL FABRICATIONS”,律师案卷号为SITI-00200;以及由Babak Adibi和Edward S.Murrer提交于2008年6月24日的“SOLAR CELL FABRICATION WITH FACETING ANDIMPLANTATION”,律师案卷号为SITI-00400。可以设想,任何在这些共同未决专利申请内所描述的特征都可以并入到本发明中。
从合并有细节的具体实施方式的角度对本发明进行了描述,以促进对本发明的构造和工作的原理的理解。本文中对具体实施方式的这种引用及其细节并不是为了限制本文所附权利要求书的范围。本领域中技术人员将很容易明白,可以对被选择用于示例说明的实施方式作出其他各种修改,而不背离本发明如由权利要求书所定义的精髓和范围。
权利要求书(按照条约第19条的修改)
1.一种形成太阳能电池的方法,该方法包括:
提供具有预先掺杂区域的半导体晶片,其中所述半导体晶片为硅衬底;
执行掺杂物至所述半导体晶片中的第一离子注入,以在所述预先掺杂区域之上形成第一掺杂区域,其中所述第一离子注入具有浓度比对深度分布;以及
执行掺杂物至所述半导体晶片中的第二离子注入,以在所述预先掺杂区域之上形成第二掺杂区域,其中所述第二离子注入具有与所述第一离子注入的浓度比对深度分布不同的浓度比对深度分布,
其中所述第一掺杂区域和所述第二掺杂区域中的至少一个区域被配置成在接收到光时生成电子-空穴对,并且
其中所述第一离子注入和第二离子注入彼此独立地执行。
2.根据权利要求1的方法,其中在所述预先掺杂区域与所述被配置成生成电子-空穴对的所述第一掺杂区域和所述第二掺杂区域中的至少一个区域之间形成p-n结。
3.根据权利要求1的方法,其中通过所述第一离子注入形成的所述第一掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻。
4.根据权利要求1的方法,其中通过所述第二离子注入形成的所述第二掺杂区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
5.根据权利要求1的方法,其中:
通过第一离子注入形成的所述第一掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻,并且
通过所述第二离子注入形成的所述第二掺杂区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
6.根据权利要求1的方法,其还包括在所述半导体晶片的表面上安放金属接触线的步骤,其中所述金属接触线被配置成传导来自所述第一掺杂区域和第二掺杂区域中的至少一个区域的电荷。
7.根据权利要求1的方法,其中所述预先掺杂区域是p型掺杂的,并且所述第一掺杂区域和第二掺杂区域是n型掺杂的。
8.根据权利要求1的方法,其还包括在所述离子注入步骤中的至少一个步骤之后,对所述半导体晶片执行退火过程的步骤。
9.一种形成太阳能电池的方法,该方法包括:
提供具有预先掺杂区域的半导体晶片;
通过执行掺杂物至所述半导体晶片中的第一离子注入而在所述半导体晶片中所述预先掺杂区域之上形成均匀掺杂区域,其中在所述预先掺杂区域与所述均匀掺杂区域之间形成p-n结,并且所述均匀掺杂区域被配置成在接收到光时生成电子-空穴对;以及
通过执行掺杂物至所述半导体晶片中的第二离子注入而在所述半导体晶片中所述均匀掺杂区域之上形成多个选择性掺杂区域,
其中所述第一离子注入和第二离子注入彼此独立地执行,并且
其中所述选择性掺杂区域具有比所述均匀掺杂区域更高的掺杂物浓度。
10.根据权利要求9的方法,其中所述半导体晶片被提供作为硅衬底。
11.根据权利要求9的方法,其中通过所述第一离子注入形成的所述均匀掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻。
12.根据权利要求9的方法,其中通过所述第二离子注入形成的所述选择性掺杂区域中的每一个区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
13.根据权利要求9的方法,其中:
通过所述第一离子注入形成的所述均匀掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻,并且
通过所述第二离子注入形成的所述选择性掺杂区域中的每一个区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
14.根据权利要求9的方法,其还包括在所述半导体晶片的表面上安放金属接触线的步骤,其中所述金属接触线在所述多个选择性掺杂区域之上对齐,并且被配置成传导来自所述多个选择性掺杂区域的电荷。
15.根据权利要求14的方法,其还包括在靠近所述半导体晶片的所述表面之处形成金属种层的步骤,其中所述金属种层被配置成充当所述选择性掺杂区域与所述金属接触线之间的过渡层。
16.根据权利要求15的方法,其中所述金属种层包括硅化物。
17.根据权利要求15的方法,其中所述形成所述金属种层的步骤包括将至少一种材料离子注入至所述半导体晶片之中,其中所述至少一种材料是从包括Ni、Ta、Ti、W和Cu的组中选择的。
18.根据权利要求9的方法,其中所述预先掺杂区域是p型掺杂的,并且所述均匀掺杂区域和选择性掺杂区域是n型掺杂的。
19.根据权利要求9的方法,其还包括在所述离子注入步骤中的至少一个步骤之后,对所述半导体晶片执行退火过程的步骤。
20.根据权利要求9的方法,其还包括在所述均匀掺杂区域之上形成防反射涂敷层的步骤。
21.根据权利要求9的方法,其中使用掩膜将所述选择性掺杂区域注入在所述半导体晶片中预定位置上,其中所述掩膜包括与所述预定位置对齐的开口。
22.根据权利要求21的方法,其中所述掩膜是在所述第二离子注入期间安放在所述半导体晶片的所述表面上的接触掩膜。
23.根据权利要求21的方法,其中所述掩膜是在所述第二离子注入期间安放在所述半导体晶片的表面之上的预定距离处的物理掩膜。
24.根据权利要求9的方法,其中使用整形的离子射束将所述选择性掺杂区域注入在所述半导体晶片中预定位置处,其中所述整形的离子射束与所述预定位置对齐。
25.根据权利要求9的方法,其中所述选择性掺杂区域彼此横向隔开的距离的范围为大约1mm至大约3mm。
26.一种太阳能电池,其包括:
具有本底掺杂区域的半导体晶片;
形成于所述半导体晶片中所述本底掺杂区域之上的均匀掺杂区域,其中所述均匀掺杂区域具有在大约80欧姆/平方与大约160欧姆/平方之间的薄层电阻,并且通过将掺杂物离子注入至所述半导体晶片而形成;
形成于所述均匀掺杂区域与所述本底掺杂区域之间的p-n结;
形成于所述半导体晶片中所述均匀掺杂区域之上的多个选择性掺杂区域,其中所述选择性掺杂区域中的每一个区域具有在大约10欧姆/平方与大约40欧姆/平方之间的薄层电阻,并且通过将掺杂物离子注入至所述半导体晶片而形成;以及
安放于所述半导体晶片的表面上并且在所述多个选择性掺杂区域之上对齐的多个金属接触,其中所述多个金属接触被配置成传导来自所述多个选择性掺杂区域的电荷。
27.根据权利要求26的太阳能电池,其中所述半导体晶片为硅衬底。
28.根据权利要求26的太阳能电池,其中通过所述第一离子注入形成的所述均匀掺杂区域具有大约100欧姆/平方的薄层电阻。
29.根据权利要求26的太阳能电池,其中通过所述第二离子注入形成的选择性掺杂区域中的每一个区域具有大约25欧姆/平方的薄层电阻。
30.根据权利要求26的太阳能电池,其还包括安放于所述选择性掺杂区域之上并且在所述金属接触之下的金属种层。
31.根据权利要求30的太阳能电池,其中所述金属种层包括硅化物。
32.根据权利要求30的太阳能电池,其中所述金属种层包括至少一种从包括Ni、Ta、Ti、W和Cu的组中选择的材料。
33.根据权利要求26的太阳能电池,其中所述预先掺杂区域是p型掺杂的,并且所述均匀掺杂区域和选择性掺杂区域是n型掺杂的。
34.根据权利要求26的太阳能电池,其还包括安放于所述均匀掺杂区域之上的防反射涂敷层。
35.根据权利要求26的太阳能电池,其中所述选择性掺杂区域彼此横向隔开的距离范围为大约1mm至大约3mm。
36.一种形成太阳能电池的方法,所述方法包括:
提供具有预先掺杂区域的半导体晶片和衬底;
执行掺杂物至所述半导体晶片中的第一离子注入,以在所述预先掺杂区域之上形成第一掺杂区域,其中所述第一离子注入具有浓度比对深度分布并且所述第一掺杂区域延伸到所述半导体晶片的表面;以及
执行掺杂物至所述半导体晶片中的第二离子注入,以在所述预先掺杂区域之上形成第二掺杂区域,其中所述第二离子注入具有与所述第一离子注入的浓度比对深度分布不同的浓度比对深度分布,并且所述第二掺杂区域仅延伸跨越所述第一掺杂区域与半导体晶片相遇的部分区域;
其中所述第一掺杂区域和所述第二掺杂区域中的至少一个区域被配置成在接收到光时生成电子-空穴对,并且
其中所述第一离子注入和第二离子注入彼此独立地执行。
37.一种形成太阳能电池的方法,所述方法包括:
提供具有预先掺杂区域的半导体晶片;
执行掺杂物至所述半导体晶片中的第一离子注入,以在所述预先掺杂区域之上形成第一掺杂区域,其中所述第一离子注入具有浓度比对深度分布;
执行掺杂物至所述半导体晶片中的第二离子注入,以在所述预先掺杂区域之上形成第二掺杂区域,其中所述第二离子注入具有与所述第一离子注入的浓度比对深度分布不同的浓度比对深度分布;并且
形成到所述第二掺杂区域的导电接触,其中所述第二掺杂区域并不也是第一掺杂区域;
其中所述第一掺杂区域和所述第二掺杂区域中的至少一个区域被配置成在接收到光时生成电子-空穴对,并且
其中所述第一离子注入和第二离子注入彼此独立地执行。
Claims (36)
1.一种形成太阳能电池的方法,该方法包括:
提供具有预先掺杂区域的半导体晶片;
执行掺杂物至所述半导体晶片中的第一离子注入,以在所述预先掺杂区域之上形成第一掺杂区域,其中所述第一离子注入具有浓度比对深度分布;以及
执行掺杂物至所述半导体晶片中的第二离子注入,以在所述预先掺杂区域之上形成第二掺杂区域,其中所述第二离子注入具有与所述第一离子注入的浓度比对深度分布不同的浓度比对深度分布,
其中所述第一掺杂区域和所述第二掺杂区域中的至少一个区域被配置成在接收到光时生成电子-空穴对,并且
其中所述第一离子注入和第二离子注入彼此独立地执行。
2.根据权利要求1的方法,其中在所述预先掺杂区域与所述被配置成生成电子-空穴对的所述第一掺杂区域和所述第二掺杂区域中的至少一个区域之间形成p-n结。
3.根据权利要求1的方法,其中所述半导体晶片被提供作为硅衬底。
4.根据权利要求1的方法,其中通过所述第一离子注入形成的所述第一掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻。
5.根据权利要求1的方法,其中通过所述第二离子注入形成的所述第二掺杂区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
6.根据权利要求1的方法,其中:
通过第一离子注入形成的所述第一掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻,并且
通过所述第二离子注入形成的所述第二掺杂区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
7.根据权利要求1的方法,其还包括在所述半导体晶片的表面上安放金属接触线的步骤,其中所述金属接触线被配置成传导来自所述第一掺杂区域和第二掺杂区域中的至少一个区域的电荷。
8.根据权利要求1的方法,其中所述预先掺杂区域是p型掺杂的,并且所述第一掺杂区域和第二掺杂区域是n型掺杂的。
9.根据权利要求1的方法,其还包括在所述离子注入步骤中的至少一个步骤之后,对所述半导体晶片执行退火过程的步骤。
10.一种形成太阳能电池的方法,该方法包括:
提供具有预先掺杂区域的半导体晶片;
通过执行掺杂物至所述半导体晶片中的第一离子注入而在所述半导体晶片中所述预先掺杂区域之上形成均匀掺杂区域,其中在所述预先掺杂区域与所述均匀掺杂区域之间形成p-n结,并且所述均匀掺杂区域被配置成在接收到光时生成电子-空穴对;以及
通过执行掺杂物至所述半导体晶片中的第二离子注入而在所述半导体晶片中所述均匀掺杂区域之上形成多个选择性掺杂区域,
其中所述第一离子注入和第二离子注入彼此独立地执行,并且
其中所述选择性掺杂区域具有比所述均匀掺杂区域更高的掺杂物浓度。
11.根据权利要求10的方法,其中所述半导体晶片被提供作为硅衬底。
12.根据权利要求10的方法,其中通过所述第一离子注入形成的所述均匀掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻。
13.根据权利要求10的方法,其中通过所述第二离子注入形成的所述选择性掺杂区域中的每一个区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
14.根据权利要求10的方法,其中:
通过所述第一离子注入形成的所述均匀掺杂区域具有范围在大约80欧姆/平方至大约160欧姆/平方的薄层电阻,并且
通过所述第二离子注入形成的所述选择性掺杂区域中的每一个区域具有范围在大约10欧姆/平方至大约40欧姆/平方的薄层电阻。
15.根据权利要求10的方法,其还包括在所述半导体晶片的表面上安放金属接触线的步骤,其中所述金属接触线在所述多个选择性掺杂区域之上对齐,并且被配置成传导来自所述多个选择性掺杂区域的电荷。
16.根据权利要求15的方法,其还包括在靠近所述半导体晶片的所述表面之处形成金属种层的步骤,其中所述金属种层被配置成充当所述选择性掺杂区域与所述金属接触线之间的过渡层。
17.根据权利要求16的方法,其中所述金属种层包括硅化物。
18.根据权利要求16的方法,其中所述形成所述金属种层的步骤包括将至少一种材料离子注入至所述半导体晶片之中,其中所述至少一种材料是从包括Ni、Ta、Ti、W和Cu的组中选择的。
19.根据权利要求10的方法,其中所述预先掺杂区域是p型掺杂的,并且所述均匀掺杂区域和选择性掺杂区域是n型掺杂的。
20.根据权利要求10的方法,其还包括在所述离子注入步骤中的至少一个步骤之后,对所述半导体晶片执行退火过程的步骤。
21.根据权利要求10的方法,其还包括在所述均匀掺杂区域之上形成防反射涂敷层的步骤。
22.根据权利要求10的方法,其中使用掩膜将所述选择性掺杂区域注入在所述半导体晶片中预定位置上,其中所述掩膜包括与所述预定位置对齐的开口。
23.根据权利要求22的方法,其中所述掩膜是在所述第二离子注入期间安放在所述半导体晶片的所述表面上的接触掩膜。
24.根据权利要求22的方法,其中所述掩膜是在所述第二离子注入期间安放在所述半导体晶片的表面之上的预定距离处的物理掩膜。
25.根据权利要求10的方法,其中使用整形的离子射束将所述选择性掺杂区域注入在所述半导体晶片中预定位置处,其中所述整形的离子射束与所述预定位置对齐。
26.根据权利要求10的方法,其中所述选择性掺杂区域彼此横向隔开的距离的范围为大约1mm至大约3mm。
27.一种太阳能电池,其包括:
具有本底掺杂区域的半导体晶片;
形成于所述半导体晶片中所述本底掺杂区域之上的均匀掺杂区域,其中所述均匀掺杂区域具有在大约80欧姆/平方与大约160欧姆/平方之间的薄层电阻,并且通过将掺杂物离子注入至所述半导体晶片而形成;
形成于所述均匀掺杂区域与所述本底掺杂区域之间的p-n结;
形成于所述半导体晶片中所述均匀掺杂区域之上的多个选择性掺杂区域,其中所述选择性掺杂区域中的每一个区域具有在大约10欧姆/平方与大约40欧姆/平方之间的薄层电阻,并且通过将掺杂物离子注入至所述半导体晶片而形成;以及
安放于所述半导体晶片的表面上并且在所述多个选择性掺杂区域之上对齐的多个金属接触,其中所述多个金属接触被配置成传导来自所述多个选择性掺杂区域的电荷。
28.根据权利要求27的太阳能电池,其中所述半导体晶片为硅衬底。
29.根据权利要求27的太阳能电池,其中通过所述第一离子注入形成的所述均匀掺杂区域具有大约100欧姆/平方的薄层电阻。
30.根据权利要求27的太阳能电池,其中通过所述第二离子注入形成的选择性掺杂区域中的每一个区域具有大约25欧姆/平方的薄层电阻。
31.根据权利要求27的太阳能电池,其还包括安放于所述选择性掺杂区域之上并且在所述金属接触之下的金属种层。
32.根据权利要求31的太阳能电池,其中所述金属种层包括硅化物。
33.根据权利要求31的太阳能电池,其中所述金属种层包括至少一种从包括Ni、Ta、Ti、W和Cu的组中选择的材料。
34.根据权利要求27的太阳能电池,其中所述预先掺杂区域是p型掺杂的,并且所述均匀掺杂区域和选择性掺杂区域是n型掺杂的。
35.根据权利要求27的太阳能电池,其还包括安放于所述均匀掺杂区域之上的防反射涂敷层。
36.根据权利要求27的太阳能电池,其中所述选择性掺杂区域彼此横向隔开的距离范围为大约1mm至大约3mm。
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CN110828601B (zh) * | 2015-03-27 | 2023-08-04 | 迈可晟太阳能有限公司 | 使用基板级离子注入制造太阳能电池发射极区 |
CN105845776A (zh) * | 2016-04-26 | 2016-08-10 | 泰州中来光电科技有限公司 | 局部背场n型光伏电池的制备方法及其电池和组件、系统 |
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JP2011524640A (ja) | 2011-09-01 |
KR20110042052A (ko) | 2011-04-22 |
US20090308450A1 (en) | 2009-12-17 |
JP2011525301A (ja) | 2011-09-15 |
JP2011524639A (ja) | 2011-09-01 |
JP5520290B2 (ja) | 2014-06-11 |
KR20110042051A (ko) | 2011-04-22 |
JP2011524638A (ja) | 2011-09-01 |
US20090308439A1 (en) | 2009-12-17 |
US8697553B2 (en) | 2014-04-15 |
EP2319087A1 (en) | 2011-05-11 |
KR20110050423A (ko) | 2011-05-13 |
WO2009152368A1 (en) | 2009-12-17 |
CN102150277A (zh) | 2011-08-10 |
HK1158366A1 (zh) | 2012-07-13 |
EP2319088A1 (en) | 2011-05-11 |
KR20110042053A (ko) | 2011-04-22 |
US20090309039A1 (en) | 2009-12-17 |
US8871619B2 (en) | 2014-10-28 |
CN102099923A (zh) | 2011-06-15 |
WO2009152378A1 (en) | 2009-12-17 |
EP2308060A1 (en) | 2011-04-13 |
EP2304803A1 (en) | 2011-04-06 |
CN102099870A (zh) | 2011-06-15 |
WO2009152365A1 (en) | 2009-12-17 |
US20090308440A1 (en) | 2009-12-17 |
EP2308060A4 (en) | 2013-10-16 |
CN102099923B (zh) | 2016-04-27 |
WO2009152375A1 (en) | 2009-12-17 |
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