CN102157562A - 底栅金属氧化物薄膜晶体管的制备方法 - Google Patents

底栅金属氧化物薄膜晶体管的制备方法 Download PDF

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CN102157562A
CN102157562A CN201110009722XA CN201110009722A CN102157562A CN 102157562 A CN102157562 A CN 102157562A CN 201110009722X A CN201110009722X A CN 201110009722XA CN 201110009722 A CN201110009722 A CN 201110009722A CN 102157562 A CN102157562 A CN 102157562A
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metal oxide
film transistor
oxide thin
meant
bottom gate
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CN102157562B (zh
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董承远
施俊斐
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Guangdong core Juneng Semiconductor Co., Ltd
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Shanghai Jiaotong University
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CN 201110009722 2011-01-18 2011-01-18 底栅金属氧化物薄膜晶体管的制备方法 Active CN102157562B (zh)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022044A (zh) * 2013-03-01 2014-09-03 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
CN104425518A (zh) * 2013-09-11 2015-03-18 三星显示有限公司 显示面板及其制造方法
WO2017143678A1 (fr) * 2016-02-25 2017-08-31 深圳市华星光电技术有限公司 Transistor à couches minces d'oxyde et son procédé de préparation
CN107146818A (zh) * 2017-06-27 2017-09-08 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法、阵列基板及显示装置
CN112420519A (zh) * 2020-11-19 2021-02-26 绵阳惠科光电科技有限公司 一种铟镓锌氧化物薄膜晶体管器件的制备方法
CN114171457A (zh) * 2021-12-07 2022-03-11 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN114509903A (zh) * 2022-02-10 2022-05-17 武汉华星光电技术有限公司 显示面板
CN115274454A (zh) * 2022-08-29 2022-11-01 延边大学 氧化物半导体薄膜晶体管及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100055832A1 (en) * 2008-09-01 2010-03-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101740630A (zh) * 2008-11-07 2010-06-16 株式会社半导体能源研究所 半导体器件及其制造方法
CN101859799A (zh) * 2009-04-02 2010-10-13 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
EP2256795A1 (fr) * 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteurs d'oxyde et son procédé de fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100055832A1 (en) * 2008-09-01 2010-03-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101740630A (zh) * 2008-11-07 2010-06-16 株式会社半导体能源研究所 半导体器件及其制造方法
CN101859799A (zh) * 2009-04-02 2010-10-13 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
EP2256795A1 (fr) * 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteurs d'oxyde et son procédé de fabrication

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9818605B2 (en) 2013-03-01 2017-11-14 Boe Technology Group Co., Ltd. Oxide TFT, preparation method thereof, array substrate, and display device
CN104022044B (zh) * 2013-03-01 2017-05-10 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
CN104022044A (zh) * 2013-03-01 2014-09-03 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
CN104425518A (zh) * 2013-09-11 2015-03-18 三星显示有限公司 显示面板及其制造方法
CN104425518B (zh) * 2013-09-11 2019-09-10 三星显示有限公司 显示面板及其制造方法
WO2017143678A1 (fr) * 2016-02-25 2017-08-31 深圳市华星光电技术有限公司 Transistor à couches minces d'oxyde et son procédé de préparation
CN107146818A (zh) * 2017-06-27 2017-09-08 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法、阵列基板及显示装置
US11784258B2 (en) 2017-06-27 2023-10-10 Boe Technology Group Co., Ltd. Thin film transistor with insulating portion between source/drian electrode and gate insulating layer, and manufacturing method thereof
CN112420519A (zh) * 2020-11-19 2021-02-26 绵阳惠科光电科技有限公司 一种铟镓锌氧化物薄膜晶体管器件的制备方法
CN112420519B (zh) * 2020-11-19 2021-06-08 绵阳惠科光电科技有限公司 一种铟镓锌氧化物薄膜晶体管器件的制备方法
CN114171457A (zh) * 2021-12-07 2022-03-11 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN114509903A (zh) * 2022-02-10 2022-05-17 武汉华星光电技术有限公司 显示面板
CN114509903B (zh) * 2022-02-10 2024-02-13 武汉华星光电技术有限公司 显示面板
CN115274454A (zh) * 2022-08-29 2022-11-01 延边大学 氧化物半导体薄膜晶体管及其制备方法

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Patentee before: SHANGHAI JIAO TONG University