CN102157562B - 底栅金属氧化物薄膜晶体管的制备方法 - Google Patents

底栅金属氧化物薄膜晶体管的制备方法 Download PDF

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Publication number
CN102157562B
CN102157562B CN 201110009722 CN201110009722A CN102157562B CN 102157562 B CN102157562 B CN 102157562B CN 201110009722 CN201110009722 CN 201110009722 CN 201110009722 A CN201110009722 A CN 201110009722A CN 102157562 B CN102157562 B CN 102157562B
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metal oxide
film transistor
oxide thin
refers
bottom gate
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CN102157562A (zh
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董承远
施俊斐
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Guangdong core Juneng Semiconductor Co., Ltd
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Shanghai Jiaotong University
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CN102157562B true CN102157562B (zh) 2013-07-10

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022044B (zh) 2013-03-01 2017-05-10 北京京东方光电科技有限公司 氧化物薄膜晶体管及其制备方法、阵列基板和显示装置
KR102110226B1 (ko) * 2013-09-11 2020-05-14 삼성디스플레이 주식회사 표시패널 및 그 제조방법
CN105702742A (zh) * 2016-02-25 2016-06-22 深圳市华星光电技术有限公司 氧化物薄膜晶体管及其制备方法
CN107146818B (zh) * 2017-06-27 2020-02-18 京东方科技集团股份有限公司 一种薄膜晶体管、其制作方法、阵列基板及显示装置
CN112420519B (zh) * 2020-11-19 2021-06-08 绵阳惠科光电科技有限公司 一种铟镓锌氧化物薄膜晶体管器件的制备方法
CN114171457B (zh) * 2021-12-07 2023-07-04 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN114509903B (zh) * 2022-02-10 2024-02-13 武汉华星光电技术有限公司 显示面板
CN115274454B (zh) * 2022-08-29 2023-03-28 延边大学 氧化物半导体薄膜晶体管及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101740630A (zh) * 2008-11-07 2010-06-16 株式会社半导体能源研究所 半导体器件及其制造方法
CN101859799A (zh) * 2009-04-02 2010-10-13 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
EP2256795A1 (fr) * 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteurs d'oxyde et son procédé de fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569454B (zh) * 2008-09-01 2017-02-01 半導體能源研究所股份有限公司 半導體裝置的製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101740630A (zh) * 2008-11-07 2010-06-16 株式会社半导体能源研究所 半导体器件及其制造方法
CN101859799A (zh) * 2009-04-02 2010-10-13 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
EP2256795A1 (fr) * 2009-05-29 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Dispositif à semi-conducteurs d'oxyde et son procédé de fabrication

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