CN102171378A - 用于光学和电子器件的热管理的键合金属和陶瓷板 - Google Patents
用于光学和电子器件的热管理的键合金属和陶瓷板 Download PDFInfo
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Abstract
一种陶瓷组件包括用于热耦合到发热器件的一个或者多个电和热传导焊盘,各个传导焊盘相互电隔离。陶瓷组件包括用于提供这一电隔离的陶瓷层。陶瓷层具有高热传导率和高电阻率。陶瓷层的顶表面和底表面各自使用中间接合材料来键合到传导层、例如铜。进行钎焊工艺以经由接合层将陶瓷层键合到传导层。接合层是接合材料、陶瓷层和传导层的合成物。蚀刻顶部传导层和接合层以形成电隔离的传导焊盘。使用裸陶瓷方式或者金属化陶瓷方式将传导层键合到陶瓷层。
Description
相关申请的交叉引用
本申请要求相同发明人于2008年8月5日提交并且发明名称为“Fabrication of Microheat Exchanger for Laser Diode Cooling”的第61/188,078号美国临时申请的优先权。本申请通过引用将第61/188,078号美国临时申请的整体结合于此。
技术领域
本发明涉及一种微型换热器及其制造方法。具体而言,本发明涉及一种用于激光二极管冷却的微型换热器及其制造方法。
背景技术
微型换热器由热传导材料制成并且用来从发热器件如集成电路或者激光二极管向流过微型换热器内的流体路径的流体传热。微型换热器普遍由金属如铜制成,并且在发热器件与微型换热器之间经常需要电隔离。一些陶瓷材料传导热而阻抗电。出于这一原因,经常在发热器件与微型换热器之间使用这样的陶瓷材料作为用于提供电隔离而又仍然维持热传导性的中间材料。然而将发热器件直接连接到陶瓷并不实际。取而代之,发热器件耦合到通常由传导金属如铜制成的传导焊盘。在这样的配置中,陶瓷是在耦合到发热器件的传导铜焊盘与微型换热器之间的中间层。
为了提供从发热器件向微型换热器的高效传热,在陶瓷与铜之间的良好热界面是必需的。一种直接键合铜(DBC)方法使用高温接合工艺以在存在具有少量氧(50ppm-200ppm)的保护气体氛围中将铜片键合到陶瓷板。在通过引用将其整体结合于此的第6,297,469号美国专利和第7,036,711号美国专利中描述了示例DBC方法。这些常用陶瓷材料是氧化铍(BeO)、氧化铝(Al2O3)和氮化铝(AlN)。氧和铜在高温之下键合在一起。在氮和少量百分比的氧的氛围中将铜与陶瓷加热到仔细控制的温度。所用温度在与铜的熔化温度接近的1950与1981华氏度之间的范围内。在这些条件之下,形成成功键合到铜与陶瓷两者的铜-氧共晶,由此将铜层键合到陶瓷层。使用铜层作为将耦合到发热器件的传导焊盘。通常将陶瓷层焊接到微型换热器的顶部。
一般在键合中并且具体在DBC技术中存在诸多问题。首先,向硬陶瓷板施加高温经常造成陶瓷破裂。第二,微孔形成于键合的铜层与陶瓷层的界面。微孔归因于铜层与陶瓷层的接触表面中的缺陷和不规则。对于其中大发热器件或者多个发热器件耦合到单个陶瓷板的应用,陶瓷板的尺寸更大。然而陶瓷板越大,微孔的影响就越大。微孔的存在降低了热效率。另外,微孔的存在增加了铜层和陶瓷层将分层的可能性,这是因为没有在整个界面表面内的理想键合。
第三,铜的热膨胀效率比陶瓷的热膨胀效率高得多。在高温DBC工艺期间,在陶瓷层与铜层键合的点,铜层比陶瓷膨胀更多。然而在冷却时铜层由于热膨胀系数不同而比陶瓷收缩更多,这导致键合的铜-陶瓷组件的卷曲和可能的破裂。
发明内容
一种微型换热组件被配置成冷却一个或者多个发热器件、例如集成电路或者激光二极管。在一些实施例中,微型换热组件包括热耦合到第一表面的第一陶瓷组件并且在一些实施例中包括热耦合到第二表面的第二陶瓷组件。各陶瓷组件包括用于热耦合到发热器件的一个或者多个电和热传导焊盘,各传导焊盘相互电隔离。各陶瓷组件包括用于提供这一电隔离的陶瓷层。陶瓷层具有高热传导率和高电阻率。陶瓷层的顶表面和底表面各自使用中间接合材料键合到传导层、例如铜。进行钎焊工艺以经由接合层将陶瓷层键合到传导层。接合层是接合材料、陶瓷层和传导层的合成物。蚀刻顶部传导层和接合层以形成电隔离的传导焊盘。使用裸陶瓷方式或者金属化陶瓷方式将传导层键合到陶瓷层。
在一个方面中,一种器件包括:第一铜层;陶瓷层;第二铜层;第一活性钎焊合金,键合于第一铜层与陶瓷层之间以形成第一接合层;以及第二活性钎焊合金,键合于陶瓷层与第二铜层之间以形成第二接合层。在一些实施例中,陶瓷层为氧化铍、氧化铝或者氮化铝。在一些实施例中,第一活性钎焊合金层和第二活性钎焊合金层为基于铜的活性钎焊合金、基于铜-银的活性钎焊合金或者基于铟-铜-银的活性钎焊合金。在一些实施例中,第一活性钎焊合金层和第二活性钎焊合金层为活性接合材料膏。在其它实施例中,第一活性钎焊合金层和第二活性钎焊合金层为活性接合材料箔。
在另一方面中,一种器件包括第一铜层;陶瓷层;第二铜层;第一活性钎焊合金层,键合于第一铜层与陶瓷层之间以形成第一接合层,其中第一铜层和第一接合层被配置成形成多个电隔离的传导焊盘;以及第二活性钎焊合金层,键合于陶瓷层与第二铜层之间以形成第二接合层。在一些实施例中,第一铜层和第一接合层被蚀刻以形成多个电隔离的传导焊盘,另外其中多个电隔离的焊盘中的各焊盘通过陶瓷层来相互和与第二铜层电隔离。在一些实施例中,多个电隔离的焊盘中的各焊盘包括从第一铜层的第一表面经过第一铜层和第一接合层延伸到陶瓷层的第一表面的蚀刻壁,第一铜层的第一表面远离第一接合层,并且陶瓷层的第一表面邻近第一接合层,另外其中经过第一铜层和第一接合层的蚀刻壁的斜度是均匀的。在其它实施例中,多个电隔离的焊盘中的各焊盘包括从第一铜层的第一表面经过第一铜层和第一接合层延伸到陶瓷层的第一表面的蚀刻壁,第一铜层的第一表面远离第一接合层,并且陶瓷层的第一表面邻近第一接合层,另外其中经过第一接合层的蚀刻壁的斜度比经过第一铜层的蚀刻壁的斜度更陡。在一些实施例中,陶瓷层为氧化铍、氧化铝或者氮化铝。在一些实施例中,第一活性钎焊合金层和第二活性钎焊合金层为基于铜的活性钎焊合金、基于铜-银的活性钎焊合金或者基于铟-铜-银的活性钎焊合金。在一些实施例中,第一活性钎焊合金层和第二活性钎焊合金层为活性接合材料膏。在其它实施例中,第一活性钎焊合金层和第二活性钎焊合金层为活性接合材料箔。
在又一方面中,一种器件包括:第一铜层;陶瓷层,包括金属化第一表面和金属化第二表面;第二铜层;第一铜与陶瓷接合层,键合于第一铜层与陶瓷层的金属化第一表面之间以形成第一接合层,其中第一铜层、第一接合层和金属化第一表面被配置成形成多个电隔离的传导焊盘;以及第二铜与陶瓷接合层,键合于陶瓷层的金属化第二表面与第二铜层之间以形成第二接合层。在一些实施例中,第一铜层、第一接合层和金属化第一表面被蚀刻以形成多个电隔离的传导焊盘,另外其中多个电隔离的焊盘中的各焊盘通过陶瓷层来相互和与第二铜层电隔离。在一些实施例中,多个电隔离的焊盘中的各焊盘包括从第一铜层的第一表面经过第一铜层、第一接合层和金属化第一表面延伸到陶瓷层的第一表面的蚀刻壁,另外其中经过第一铜层、第一接合层和金属化第一表面的蚀刻壁的斜度是均匀的。在其它实施例中,多个电隔离的焊盘中的各焊盘包括从第一铜层的第一表面经过第一铜层、第一接合层和金属化第一表面延伸到陶瓷层的第一表面的蚀刻壁,另外其中经过第一接合层的蚀刻壁的斜度比经过第一铜层的蚀刻壁的斜度更陡。在一些实施例中,金属化第一表面为钼锰和镍。在一些实施例中,陶瓷层为氧化铍、氧化铝或者氮化铝。在一些实施例中,第一铜与陶瓷接合层和第二铜与陶瓷接合层为铜-银膏、铜-银箔、铜-金膏或者铜-金箔。在一些实施例中,第一铜与陶瓷接合层和第一铜层为第一镀制银的铜片,并且第二铜与陶瓷接合层和第二铜层为第二镀制银的铜片
在另一方面中,一种器件包括:陶瓷层,包括金属化第一表面和金属化第二表面,第一铜层,镀制到金属化第一表面,其中第一镀制铜层和金属化第一表面被配置成形成多个电隔离的传导焊盘;以及第二铜层,镀制到金属化第二表面。在一些实施例中,第一铜层和金属化第一表面被蚀刻以形成多个电隔离的传导焊盘,另外其中多个电隔离的焊盘中的各焊盘通过陶瓷层来相互和与第二铜层电隔离。在一些实施例中,多个电隔离的焊盘中的各焊盘包括从第一铜层的第一表面经过第一铜层和金属化第一表面延伸到陶瓷层的第一表面的蚀刻壁,另外其中经过第一铜层和金属化第一表面的蚀刻壁的斜度是均匀的。在一些实施例中,多个电隔离的焊盘中的各焊盘包括从第一铜层的第一表面经过第一铜层和金属化第一表面延伸到陶瓷层的第一表面的蚀刻壁,另外其中经过金属化第一表面的蚀刻壁的斜度比经过第一铜层的蚀刻壁的斜度更陡。在一些实施例中,金属化第一表面为钼锰和镍。在一些实施例中,陶瓷层为氧化铍、氧化铝或者氮化铝。
陶瓷组件的其它特征和优点将在察看下文阐述的实施例的具体描述之后变得清楚。
附图说明
图1图示了根据第一实施例的使用裸陶瓷方式来制作的陶瓷组件的示例层的剖视侧视图,图1中所示视图是在进行钎焊工艺之前。
图2图示了根据第二实施例的使用裸陶瓷方式来制作的陶瓷组件的示例层的剖视侧视图,图1中所示视图是在进行钎焊工艺之前。
图3图示了用于根据裸陶瓷方式来制作陶瓷组件的示例过程。
图4图示了根据第一实施例的使用金属化陶瓷方式的钎焊铜选择来制作的陶瓷组件的示例层的剖视侧视图,图4中所示视图是在进行钎焊工艺之前。
图5图示了根据第二实施例的使用金属化陶瓷方式来制作的陶瓷组件的示例层的剖视侧视图,图5中所示视图是在进行钎焊工艺之前。
图6图示了根据使用金属化陶瓷方式的钎焊铜选择来制作的陶瓷组件的示例层的剖视侧视图。
图7图示了根据第三实施例的使用金属化陶瓷方式的镀制铜选择来制作的陶瓷组件的示例层的剖视侧视图。
图8图示了用于根据金属化陶瓷方式的镀制铜选择来制作陶瓷组件的示例过程。
图9图示了示例陶瓷组件的剖视侧视图。
图10-11图示了向图9的示例陶瓷组件施加的两步蚀刻工艺。
图12图示了在两个相邻焊盘之间的蚀刻表面的放大部分。
图13图示了向图9的示例陶瓷组件施加的两步蚀刻工艺。
图14-17图示了用于制作示例陶瓷组件之时构图铜层和接合层的第二方式。
图18图示了根据一个实施例的用于制作微型换热组件的示例过程。
图19图示了具有使用裸陶瓷方式来制作的陶瓷组件的完整微型换热组件的示例层的剖视侧视图。
图20图示了具有使用金属化陶瓷方式的钎焊铜选择来制作的陶瓷组件的完整微型换热组件的示例层的剖视侧视图。
图21图示了具有使用金属化陶瓷方式的镀制铜选择来制作的陶瓷组件的完整微型换热组件的示例层的剖视侧视图。
参照附图的若干图描述陶瓷组件。在适当时并且仅在多于一幅附图中公开和示出相同元件时,将使用相同标号以代表这样的相同元件。
具体实施方式
现在将具体参照陶瓷组件的实施例,其中在附图中图示了该陶瓷组件的例子。尽管下文将结合实施例描述陶瓷组件,但是将理解它们并非意在将陶瓷组件限于这些实施例和例子。相反,陶瓷组件意在覆盖可以包括在如所附权利要求书限定的陶瓷组件的精神实质和范围内的替代、修改和等效物。另外,在对陶瓷组件的下文具体描述中阐述诸多具体细节以便更全面地说明陶瓷组件。然而本领域普通技术人员将清楚无这些具体细节仍可实施陶瓷组件。在其它实例中没有具体描述公知方法和流程、部件和工艺以免不必要地使陶瓷组件的各方面难以理解。
实施例涉及一种微型换热组件和陶瓷组件及其制作方法。微型换热组件被配置成冷却一个或者多个发热器件,例如电子器件。在一些实施例中,微型换热组件包括多个电和热传导焊盘,各传导焊盘相互电隔离。发热器件使用任何常规方法如焊接来电和热耦合到传导焊盘。在一种示例应用中,各焊盘耦合到在用于工业切割和标记应用的高功率激光器中使用的激光二极管阵列中的一个激光二极管。在这样的应用中,微型换热组件称为用于激光二极管的微型换热器(MELDTM)。该微型换热组件特别适用于要求在共同平面中布置多个发热器件,如激光二极管阵列的那些应用。通过电隔离各传导焊盘,耦合到传导焊盘的发热器件相互电隔离而又维持从各发热器件向微型换热器的均匀高速率的热传递。为了提供这一电隔离,使用具有高热传导率和高电阻率的陶瓷层。在一些实施例中,陶瓷层由氧化铍、氧化铝或者氮化铝制成。陶瓷层的顶表面和底表面各自使用中间接合材料来键合到传导层。在键合工艺期间钎焊接合材料使液相线接合材料能够熔化,这提供材料向陶瓷层与传导层的接触表面上的微孔中的局部化“流动”,由此提高热效率。在一些实施例中,各传导层为铜。蚀刻顶部传导层和中间接合材料以形成电隔离的传导焊盘。键合的陶瓷层和传导层形成第一陶瓷组件。
第一陶瓷组件的底部传导层键合到冷却流体循环经过的微型换热器的顶表面。微型换热器由热传导材料制成。在一些实施例中,微型换热器由铜制成。从耦合到传导焊盘的发热器件向流过微型换热器的流体传热。
在一些实施例中,形成第二陶瓷组件并且将它焊接到微型换热器的底部表面。第二陶瓷组件也可以包括多个电隔离的传导焊盘,这些焊盘可以与第一陶瓷组件上的焊盘相同或者不同地加以构图。
微型换热组件的制作包括制作陶瓷组件、制作微型换热器以及最终组装和钎焊微型换热组件这些主要步骤。
A.制作陶瓷组件
通过使用中间接合材料将传导层键合到薄陶瓷板的两侧来形成陶瓷组件。在一些实施例中,各传导层为铜层。在一些实施例中,陶瓷板由氧化铍(BeO)、氧化铝(Al2O3)或者氮化铝(AlN)制成。BeO的使用可能由于它的毒性而受到限制。陶瓷板的最佳厚度取决于最小化传热阻抗而又维持键合层机械强度的能力。传热阻抗随着陶瓷板的厚度减少而减少,但是机械强度随着陶瓷板的厚度增加而增加。在一些实施例中,陶瓷板厚度从约100微米到若干毫米变化。在更多其它实施例中,陶瓷板的厚度范围为约0.5mm到约0.75mm。各铜层的厚度取决于组装的单元的卷曲程度和对为了平坦化铜层而对它进行打磨的需要。在一些实施例中,铜层厚度范围为约0.05mm到约0.5mm。在更多其它实施例中,铜层的厚度约为0.25mm。在一些实施例中,陶瓷组件的表面积范围为约1250mm2到约8000mm2。
陶瓷组件的一个制作要求在于提供铜层到陶瓷板的优良键合。除了陶瓷板之外,能够通过对铜层和接合材料的选择性去除来构图陶瓷组件的其余层以便制成电隔离的构图的铜焊盘。公开了用于将铜键合到陶瓷板的两侧的各种技术。一种方式是使用活性钎焊合金(ABA)材料(例如基于铜的ABA(Cu-ABA)、基于铜和银的ABA(CuSil-ABA)和基于铟、铜和银的ABA(InCuSil-ABA))的裸陶瓷方式。这些ABA中的各ABA富含铜,并因此提供良好的热传导率。这些ABA中的各ABA包括用于与陶瓷键合的少量活性成分。在一些实施例中,这些ABA中的各ABA包括钛(Ti)作为活性成分。ABA中的钛与陶瓷板和铜层反应以提供化学键合从而获得形成于铜层与陶瓷板之间的接合层界面。应当理解包括除了钛之外的一种或者多种活性成分的替代ABA可以用来与陶瓷键合。
另外,使用钎焊材料作为中间接合材料提供材料向接触表面的微孔中的“流动”。钎焊是一种由此将接合材料如金属或者合金加热到熔化温度的接合工艺。在熔化温度,液相线接合材料与基础金属的薄层相互作用,冷却以形成强密封接合。所得接合层是ABA材料、铜层和陶瓷层的混合。钎焊材料的熔化温度低于接合的材料的熔化温度。在使用钎焊工艺以将陶瓷层键合到铜层的情况下,钎焊温度低于用来将两层直接铜键合在一起的常规温度。降低温度也减少冷却的铜-陶瓷组件上的卷曲效应。
表1示出了铜与陶瓷键合工艺中所用的一些所选活性钎焊合金的成分和熔化温度。
表1
在一些实施例中,各铜层为铜片并且以膏形式使用ABA。ABA膏可以喷涂或者丝网印刷于陶瓷板的任一侧或者两侧上或者各铜片的将附着到陶瓷板的一侧上。图1图示了根据第一实施例的使用裸陶瓷方式来制作的陶瓷组件10的示例层的剖视侧视图,图1中所示视图是在进行钎焊工艺之前。裸陶瓷方式的第一实施例使用ABA膏。ABA膏可以涂敷到各铜片的一侧,如图1中所示为ABA膏14涂敷到铜片12并且ABA膏18涂敷到铜片20,或者ABA膏可以涂敷到陶瓷板16的两侧。在一些实施例中,ABA膏的厚度在若干微米到数百微米之间变化。在更多其它实施例中,ABA膏的厚度约为25微米。
在其它实施例中,ABA箔放置于陶瓷板与各铜片之间。图2图示了根据第二实施例的使用裸陶瓷方式来制作的陶瓷组件30的示例层的剖视侧视图,图1中所示视图在进行钎焊工艺之前。裸陶瓷方式的第二实施例使用ABA箔。第一ABA箔34定位于陶瓷板36的一侧与铜片32之间,并且第二ABA箔38定位于陶瓷板36的另一侧与铜片40之间。在一些实施例中,各ABA箔34和38的厚度范围为约10微米到约100微米。在更多其它实施例中,各ABA箔34和38的厚度约为25微米。
图3图示了用于根据裸陶瓷方式来制作陶瓷组件的示例过程。在步骤22,在陶瓷板的两侧上组装铜层和ABA材料。ABA材料可以是膏或者箔。在步骤24,真空钎焊铜、ABA材料、陶瓷板、ABA材料和铜组件、由此形成陶瓷组件。由于在这一钎焊工艺中描述的ABA包含钛,所以必须避免使用合成气体(95氮/5%氢),因为在钎焊工作中将这样的气体与这些合金一起使用形成阻止陶瓷到铜的化学键合的氢化钛。铜层由包括但不限于110、102或者101铜的任何常规铜合金制成。当ABA材料为Cu-ABA时,钎焊温度范围为约1840到约1890华氏度。当ABA材料为CuSil-ABA时,钎焊温度范围为约1460到约1520华氏度。当ABA材料为InCuSil-ABA时,钎焊温度范围为约1280到约1340华氏度。
另一种用于将铜键合到陶瓷板的两侧的方式为金属化陶瓷方式,该方式使用包括但不限于钼锰(MoMn)、钛(Ti)或者钨(W)的高温难熔材料。在一些实施例中,将难熔材料如MoMn膏丝网印刷到陶瓷板的各侧上。在其它实施例中,通过物理气相沉积(PVD)将难熔材料如钛或者钨沉积到陶瓷板的第一侧和第二侧上。下一金属化步骤提供电解或者无电镀沉积镍的薄层镀层,由此形成金属化陶瓷板。镍层使得能够将金属化陶瓷板接合到铜或者将铜直接电镀到金属化陶瓷板上。金属化陶瓷方式包括用于将金属化陶瓷板键合到铜的至少两个选择。
第一选择为钎焊铜选择,其中将铜片钎焊到金属化陶瓷板的两侧。在一些实施例中,各铜片镀有在键合期间与铜反应以分别形成CuSil或者CuAu的银或者金的薄层。图4图示了根据第一实施例的使用金属化陶瓷方式的钎焊铜选择来制作的陶瓷组件50的示例层的剖视侧视图,图4中所示视图在进行钎焊工艺之前。金属化陶瓷方式的第一实施例使用金属化陶瓷板和镀制铜片。如图4中所示,陶瓷板54包括金属化层56和58。铜片51镀有层52。铜片60镀有层62。在一些实施例中,镀制层52和62各自具有在约1微米与约10微米之间的厚度。在更多其它实施例中,镀制层52和62各自具有约10微米的厚度。
在其它实施例中,钎焊合金的薄片放置于金属化陶瓷板与各铜片之间。钎焊合金片的例子包括但不限于基于铜-银的片(CuSil片)或者基于铜-金的片(CuAu片)。图5图示了根据第二实施例的使用金属化陶瓷方式来制作的陶瓷组件70的示例层的剖视侧视图,图5中所示视图是在进行钎焊工艺之前。金属化陶瓷方式的第二实施例使用钎焊合金片。第一钎焊合金片74定位于陶瓷板76的金属化层78与铜片72之间。第二钎焊合金片82定位于陶瓷板76的金属化层80与铜片84之间。在一些实施例中,各钎焊合金片74和82的厚度范围为约10微米到约100微米。在更多其它实施例中,各钎焊合金片74和82的厚度约为25微米。
图6图示了用于根据金属化陶瓷方式的钎焊铜选择来制作陶瓷组件的示例过程。在步骤140,向陶瓷板的顶表面和底表面涂敷金属化层。用于涂敷金属化层的示例工艺包括将高温难熔材料墨涂敷到陶瓷板,并且烧制陶瓷板和难熔材料墨,将Ni层电镀到难熔材料层上,烧制陶瓷板、难熔材料层和Ni镀层以形成金属化陶瓷板。通过丝网印刷或者沉积来涂敷难熔材料墨。在一些实施例中,难熔材料层具有范围为约10微米到约20微米的厚度,在2515华氏度的温度烧制陶瓷板和难熔材料墨,Ni层具有约2微米的厚度,并且在约1380华氏度的温度烧制陶瓷板、难熔材料层和Ni镀层。
在步骤142,将钎焊材料放置于金属化陶瓷层与两个铜片中的各铜片之间。在一些实施例中,钎焊材料是镀制到各铜片的银或者金。在其它实施例中,钎焊材料是定位于金属化陶瓷板与各铜片之间的钎焊合金片,例如CuSil片或者CuAu片。在任一情况下,各铜片由包括但不限于110、102或者101铜的任何常规铜合金制成。在步骤144,在金属化陶瓷板的两侧上组装铜片和钎焊材料。在步骤146,真空钎焊来自步骤144的组件,由此形成陶瓷组件。在一些实施例中,步骤146的钎焊温度约为1510华氏度。
用于将金属化陶瓷板键合到铜的金属化陶瓷方式的第二选择是镀制铜选择,该选择将铜电镀到金属化陶瓷板的两侧上。图7图示了根据第三实施例的使用金属化陶瓷方式的镀制铜选择来制作的陶瓷组件90的示例层的剖视侧视图。金属化陶瓷方式的第三实施例使用然后镀有铜的金属化陶瓷板。如图7中所示,陶瓷板94包括金属化层96和98。铜镀制于金属化层96和98顶上以形成镀制铜层92和100。
图8图示了根据金属化陶瓷方式的镀制铜选择来制作陶瓷组件的示例过程。在步骤150,将金属化层涂敷到陶瓷板的顶表面和底表面,由此形成金属化陶瓷板。以与图6的步骤140相似的方式进行步骤150。为了增强镀制铜的附着,在步骤152,金属化陶瓷板上的外表面经历清洁步骤以去除氧化物层。这一清洁步骤增强镀制铜的附着。在步骤154,将铜镀制到金属化陶瓷板的各金属化层上。镀层安装和固定器被配置成考虑电流分布状况以在金属化陶瓷层的两侧上提供多达300微米厚的铜层的均匀沉积。
上述方法形成的陶瓷组件包括通过键合在各铜层与陶瓷层之间的中间接合材料来形成的接合层。中间接合材料提供铜到陶瓷板的强键合。中间接合材料在图1、图2、图4、图5和图7中表示为与邻接铜层和陶瓷层不同的分立层,这是在将铜键合到陶瓷的钎焊工艺之前的情况。一旦完成钎焊工艺,中间接合材料与邻接铜层和陶瓷层的表面一起扩散以形成称为接合层的混合界面材料。理解对在进行钎焊工艺之后的键合接合材料的任何引用意在于代表接合层。
上述陶瓷组件提供发热器件可以耦合到的单个器件界面表面。在一些应用中,多个发热器件将耦合到陶瓷组件。为了容纳多个发热器件,使用更大尺寸的陶瓷板。在一些实施例中,陶瓷板的宽度约为50mm,并且陶瓷板的长度约为160mm。然而如果发热器件耦合到具有单个器件界面表面的陶瓷组件,则在各耦合的发热器件之间无电隔离。因此为了在多个发热器件中的各发热器件之间提供电隔离,电隔离铜焊盘形成于陶瓷组件的一侧上。为了电隔离各焊盘,将铜层和接合层两者都蚀刻到陶瓷层。有必要完全蚀刻下至陶瓷层以提供用于各焊盘的电隔离。如果任何接合材料保持连接焊盘,则未实现电隔离,这是因为接合层是导电的。
光构图包括通过构图的光阻剂对材料的选择性去除并且可以通过湿蚀刻或者湿蚀刻与材料去除的物理方法如激光蚀刻或者喷珠的组合来实现。使用任何常规湿蚀刻工艺可以容易地光构图铜层。然而接合层难以通过湿蚀刻来光构图。可以湿蚀刻接合层,但是代价为过度蚀刻铜层,这是因为以比接合层更大的速率蚀刻铜。公开多种用于构图铜层和形成于铜层与陶瓷层之间的接合层的方式。第一方式使用物理蚀刻步骤。物理蚀刻步骤是包括但不限于激光蚀刻和喷珠的任何用于去除材料的常规物理方法。使用物理蚀刻步骤作为两步蚀刻工艺的部分或者单步蚀刻工艺。在两步蚀刻工艺中,进行第一湿蚀刻步骤以选择性地蚀刻外铜层。然后在对铜层进行的先前湿蚀刻所暴露的点对接合层进行第二物理蚀刻步骤。在单个蚀刻步骤中,进行物理蚀刻步骤以同时蚀刻铜层和接合层两者。
图9图示了示例陶瓷组件110的剖视侧视图。图10-图11图示了向示例陶瓷组件110施加的两步蚀刻工艺。如图9中所示,接合层114形成于陶瓷层116与铜层112之间,并且接合层118形成于陶瓷层116与铜层120之间。图10示出了在进行示例选择性湿蚀刻工艺之后的构图的铜层112’。蚀刻的铜壁的斜度122被夸大以表明湿蚀刻工艺的效果。图11示出了在对接合层114在湿蚀刻工艺之后暴露的部分进行物理蚀刻工艺之后的构图的接合层114’。构图的铜层112’和构图的接合层114’形成电隔离的焊盘130。图11中所示焊盘130的数目和尺度仅用于示例目的。蚀刻的接合层壁的斜度124比蚀刻的铜壁的斜度122更陡。不同斜度是两个不同蚀刻工艺的加工结果。图12图示了蚀刻的表面在两个相邻焊盘130之间的放大部分以更好地图示蚀刻的铜壁的斜度122与蚀刻的接合层壁的斜度124之差。图9-图12中所示斜度122和1斜度24仅用于示例目的。
图13图示了向图9的示例陶瓷组件110施加的两步蚀刻工艺。图13示出了在对两层同时进行示例选择性物理蚀刻工艺之后的构图铜层112”和构图接合层114”。构图的铜层112”和构图的接合层114”形成电隔离的焊盘130’。图13中所示焊盘130’的数目和尺度仅用于举例目的。蚀刻的铜壁的斜度122’和蚀刻的接合层壁的斜度124’相同,这是因为使用单步物理工艺来形成二者。
用于构图铜层和接合层的第二方式使用构图的丝网印刷以在陶瓷层的各侧上选择性地涂敷中间接合层。图14-17图示了用于在制作示例陶瓷组件160之时构图铜层和接合层两者的第二方式。在图14中,将中间接合材料164的丝网印刷图案涂敷到陶瓷板166的第一表面,并且将中间接合材料168的丝网印刷图案涂敷到陶瓷板166的第二表面。中间接合材料164和168是用于实现丝网印刷涂敷的墨或者膏。在一些实施例中,中间接合材料的厚度在若干微米到数百微米之间。在更多其它实施例中,中间接合材料的厚度约为25微米。在替代配置中,与图9-图13中的陶瓷组件110类似地未构图中间接合层168。一般而言,可以根据应用在一侧或者两侧上构图陶瓷组件。
在图15中,铜片162与构图的中间接合材料164相抵定位,并且铜片170与构图的中间接合材料168相抵定位。然后钎焊组件。钎焊温度取决于例如表1中描述的所用中间接合材料类型。
在图16中,在铜片162上涂敷和构图光阻剂层172,并且在铜片170上涂敷和构图光阻剂层174。构图光阻剂层172以匹配于构图的接合材料164,并且构图光阻剂层174以匹配于构图的接合材料168。
在图17中,选择性地蚀刻铜片162和170。在一些实施例中,使用湿蚀刻工艺来蚀刻铜片。然后去除光阻剂层172和174。结果是多个电隔离的传导焊盘180。图17中所示焊盘180的数目和尺度仅用于举例目的。
在使用图9-图13中所示第一方式或者图14-图17中所示第二方式时,可以通过测量焊盘之间的电阻率来验证传导焊盘的电隔离。在制作陶瓷组件中的最终步骤是激光加工组件以提供组件的钻洞对准孔和最终成形。
B.制作微型换热器
微型换热器由热传导材料制成。在一些实施例中,微型换热器由铜制成。微型换热器包括实现流体流过微型换热器的流体路径。从热传导材料向流过微型换热器的流体传热。微型换热器包括一个或者多个流体输入端口和一个或者多个流体输出端口用于实现流体流入和流出微型换热器。在一些实施例中,在微型换热器内的流体路径由网纹构图鳍设计形成以提供在整个微型换热器内的流动均匀性或者选择微型换热器的部分。当微型换热器耦合到陶瓷组件时,流体路径被设计成提供在与陶瓷组件上的传导焊盘耦合的各发热器件的长度内的流动均匀性。在一些实施例中,使用CuSil片将构图的鳍钎焊到微型换热器体。在一些实施例中,CuSil片的厚度范围为约10微米到约100微米。在更多其它实施例中,CuSil片的厚度约为25微米。理解可以使用包括流过的流体的任何常规微型换热器。
C.制作微型换热组件
最终组装涉及到在固定器中放置和对准第一陶瓷组件、微型换热器和第二陶瓷组件并且在真空或者合成气体炉中钎焊固定的组件。在一些实施例中,仅将单个陶瓷组件钎焊到微型换热器。接合材料用来将各陶瓷组件钎焊到微型换热器。在微型换热器由铜制成并且陶瓷组件的底部传导层也为铜层时,接合材料为铜到铜接合材料。在一些实施例中,接合材料为CuSil膏或者CuSil箔。在一种示例应用中,共晶CuSil接合材料由72%银和28%铜制成(熔化温度为1435华氏度)。在使用这一CuSil接合材料时,钎焊温度约为1420华氏度。在使用钎焊工艺时,接合材料“流”入陶瓷表面上的微孔中。而且,用于将陶瓷组件键合到微型换热器的钎焊温度和压强低于用于制作陶瓷组件的钎焊温度和压强。这样,使用两个单独制作步骤(一个步骤制作陶瓷组件而另一步骤制作微型换热组件)未将微型换热器置于高温或者高压之下,这减少了变形的可能性。在其它实施例中,接合材料为焊膏或者焊箔。一般而言,可以使用任何常规金属到金属接合材料。在一些实施例中,接合材料的厚度范围为约10微米到约100微米。在更多实施例中,接合材料的厚度约为25微米。在一种替代方式中,取代了涂敷单独接合材料,微型换热器体镀有银,在钎焊期间形成CuSil。在一些实施例中,银镀层厚度在约1微米与约100微米之间。在更多其它实施例中,银镀层的厚度约为10微米。
图18图示了根据一个实施例的用于制作微型换热组件的示例过程。在步骤190,在微型换热器的第一表面上组装第一陶瓷组件和接合材料。在步骤192,在微型换热器的第二表面上组装第二陶瓷组件和接合材料。接合材料可以是膏或者箔。在一些实施例中,构图第一陶瓷组件的一个或者多个表面。在另一些实施例中,构图第一陶瓷组件和第二陶瓷组件两者的一个或多个表面。在其它实施例中,未进行步骤192而仅将单个陶瓷组件和接合材料组装到微型换热器。在步骤194,钎焊第一陶瓷组件、接合材料、微型换热器、接合材料和第二陶瓷组件、由此形成微型换热组件。
图19图示了具有使用裸陶瓷方式来制作的陶瓷组件的完整微型换热组件210的示例层的剖视侧视图。微型换热组件210包括键合到微型换热组件224第一表面的构图陶瓷组件和键合到微型换热器224第二表面的陶瓷组件。构图的陶瓷组件包括构图的铜层212、构图的ABA接合层214、陶瓷板216、ABA接合层218和铜层220。构图铜层212和接合层214以形成电隔离的传导焊盘238。铜层220经由接合层222键合到微型换热器224。陶瓷组件包括铜层228、ABA接合层230、陶瓷板232、ABA接合层234和铜层236。铜层228经由接合层226键合到微型换热器224。虽然在图19中示出了仅构图铜层212和接合层214,但是理解可以根据应用来构图铜层220和接合层218、铜层228和接合层230和/或铜层236和接合层234。
如上文在制作陶瓷组件的裸陶瓷方式中所述,可以将ABA接合材料涂敷为箔或者膏。在一些实施例中,ABA接合材料为Cu-ABA、CuSil-ABA或者InCuSil-ABA。在一些实施例中,用于接合层222和226的接合材料为CuSil膏或者CuSil箔。在其它实施例中,接合材料为焊膏或者焊箔。一般而言,可以使用任何常规金属到金属接合材料。
图20图示了具有使用金属化陶瓷方式的钎焊铜选择来制作的陶瓷组件的完整微型换热组件310的示例层的剖视侧视图。微型换热组件310包括键合到微型换热器328第一表面的构图陶瓷组件和键合到微型换热器328第二表面的陶瓷组件。构图陶瓷组件包括构图的铜层312、构图的接合层314、金属化层316、陶瓷板318、金属化层320、接合层322和铜层324。构图铜层312、接合层314和金属化层316以形成电隔离传导焊盘346。铜层324经由接合层326键合到微型换热器328。陶瓷组件包括铜层332、接合层334、金属化层336、陶瓷板338、金属化层340、接合层342和铜层344。铜层332经由接合层330键合到微型换热器328。虽然在图20中示出了仅构图铜层312、接合层314和金属化层316,但是理解可以根据应用来构图铜层324、接合层322和金属化层320、铜层332、接合层334和金属化层336和/或铜层344、接合层342和金属化层340。
如上文在用于制作陶瓷组件的金属化陶瓷方式的钎焊铜选择中所述,金属化层包括镀有镍的难熔材料、例如钼锰(MoMn)、钛(Ti)或者钨(W)。用来形成接合层314、322、334和342的接合材料可以涂敷为箔或者膏。在一些实施例中,接合材料为CuSil或者CuAu膏或者CuSil或者CuAu箔。在其它实施例中,接合材料与铜层组合为镀银的铜片。在一些实施例中,用于接合层326和330的接合材料为CuSil膏或者CuSil箔。在其它实施例中,接合材料为焊膏或者焊箔。一般而言,任何常规金属到金属接合层可以用于接合层326和330。
图21图示了具有使用金属化陶瓷方式的镀制铜选择来制作的陶瓷组件的完整微型换热组件410的示例层的剖视侧视图。微型换热组件410包括键合到微型换热器424第一表面的构图陶瓷组件和键合到微型换热器424第二表面的陶瓷组件。构图的陶瓷组件包括构图的铜层412、构图的金属层414、陶瓷板416、金属化层418和铜层420。构图铜层412和金属化层414以形成电隔离的传导焊盘438。铜层420经由接合层422键合到微型换热器424。陶瓷组件包括铜层428、金属化层430、陶瓷板432、金属化层434和铜层436。铜层428经由接合层426键合到微型换热器424。虽然在图21中示出了仅构图铜层412和金属化层414,但是理解可以根据应用来构图铜层420和金属化层418、铜层428和金属化层430和/或铜层436和金属化层434。
如上文在用于制作陶瓷组件的金属化陶瓷方式的镀制铜选择中所示,金属化层包括镀有镍的难熔材料、例如钼锰(MoMn)、钛(Ti)或者钨(W)。可以将接合材料涂敷为箔或者膏。在一些实施例中,接合材料为CuSil或者CuAu膏或者CuSil或者CuAu箔。在其他实施例中,接合材料为焊膏或者焊箔。一般而言,任何常规金属到金属接合材料都可以用于接合层422和426。
上文将微型换热组件描述为经由接合材料将陶瓷组件的外表面键合到微型换热器的外表面。在替代实施例中,中间层、层堆叠、块或者器件如附加微型换热器可以定位于陶瓷组件与微型换热器之间,其中中间层、层堆叠、块或者器件热传导并且包括有利于与如上所述陶瓷组件的外表面和与微型换热器的外表面键合的外表面。
已经按照并入细节的具体实施例描述了陶瓷组件以便于理解键合板的构造和操作原理。这里对具体实施例及其细节的这样的引用将并非意在限制所附权利要求的范围。本领域技术人员将清楚可以在为了示例而选择的实施例中进行修改而不脱离键合板的精神实质和范围。
Claims (25)
1.一种器件,包括:
a.第一铜层;
b.陶瓷层;
c.第二铜层;
d.第一活性钎焊合金,键合于所述第一铜层与所述陶瓷层之间以形成第一接合层;以及
e.第二活性钎焊合金,键合于所述陶瓷层与所述第二铜层之间以形成第二接合层。
2.根据权利要求1所述的器件,其中所述陶瓷层包括氧化铍、氧化铝或者氮化铝。
3.根据权利要求1所述的器件,其中所述第一活性钎焊合金层和所述第二活性钎焊合金层包括基于铜的活性钎焊合金、基于铜-银的活性钎焊合金或者基于铟-铜-银的活性钎焊合金。
4.根据权利要求1所述的器件,其中所述第一活性钎焊合金层包括活性接合材料膏,并且所述第二活性钎焊合金层包括键合的所述活性接合材料膏,或者所述第一活性钎焊合金层包括活性接合材料箔,并且所述第二活性钎焊合金层包括所述活性接合材料箔。
5.一种器件,包括:
a.第一铜层;
b.陶瓷层;
c.第二铜层;
d.第一活性钎焊合金层,键合于所述第一铜层与所述陶瓷层之间以形成第一接合层,其中所述第一铜层和所述第一接合层被配置成形成多个电隔离的传导焊盘;以及
e.第二活性钎焊合金层,键合于所述陶瓷层与所述第二铜层之间以形成第二接合层。
6.根据权利要求5所述的器件,其中所述第一铜层和所述第一接合层被蚀刻以形成多个电隔离的传导焊盘,另外所述多个电隔离的焊盘中的各个焊盘通过所述陶瓷层来相互电隔离以及与所述第二铜层电隔离。
7.根据权利要求5所述的器件,其中所述多个电隔离的焊盘中的各个焊盘包括从所述第一铜层的第一表面经过所述第一铜层和所述第一接合层延伸到所述陶瓷层的第一表面的蚀刻壁,所述第一铜层的第一表面远离所述第一接合层,并且所述陶瓷层的第一表面邻近所述第一接合层,另外经过所述第一铜层和所述第一接合层的所述蚀刻壁的斜度是均匀的。
8.根据权利要求5所述的器件,其中所述多个电隔离的焊盘中的各个焊盘包括从所述第一铜层的第一表面经过所述第一铜层和所述第一接合层延伸到所述陶瓷层的第一表面的蚀刻壁,所述第一铜层的第一表面远离所述第一接合层,并且所述陶瓷层的第一表面邻近所述第一接合层,另外经过所述第一接合层的所述蚀刻壁的斜度比经过所述第一铜层的所述蚀刻壁的斜度更陡。
9.根据权利要求5所述的器件,其中所述陶瓷层包括氧化铍、氧化铝或者氮化铝。
10.根据权利要求5所述的器件,其中所述第一活性钎焊合金层和所述第二活性钎焊合金层包括基于铜的活性钎焊合金、基于铜-银的活性钎焊合金或者基于铟-铜-银的活性钎焊合金。
11.根据权利要求5所述的器件,其中所述第一活性钎焊合金层包括活性接合材料膏,并且所述第二活性钎焊合金层包括所述活性接合材料膏,或者所述第一活性钎焊合金层包括活性接合材料箔,并且所述第二活性钎焊合金层包括所述活性接合材料箔。
12.一种器件,包括:
a.第一铜层;
b.陶瓷层,包括金属化第一表面和金属化第二表面;
c.第二铜层;
d.第一铜与陶瓷接合层,键合于所述第一铜层与所述陶瓷层的金属化第一表面之间以形成第一接合层,其中所述第一铜层、所述第一接合层和所述金属化第一表面被配置成形成多个电隔离的传导焊盘;以及
e.第二铜与陶瓷接合层,键合于所述陶瓷层的金属化第二表面与所述第二铜层之间以形成第二接合层。
13.根据权利要求12所述的器件,其中所述第一铜层、所述第一接合层和所述金属化第一表面被蚀刻以形成多个电隔离的传导焊盘,另外所述多个电隔离的焊盘中的各个焊盘通过所述陶瓷层来相互电隔离以及与所述第二铜层电隔离。
14.根据权利要求12所述的器件,其中所述多个电隔离的焊盘中的各个焊盘包括从所述第一铜层的第一表面经过所述第一铜层、所述第一接合层和所述金属化第一表面延伸到所述陶瓷层的第一表面的蚀刻壁,另外经过所述第一铜层、所述第一接合层和所述金属化第一表面的所述蚀刻壁的斜度是均匀的。
15.根据权利要求12所述的器件,其中所述多个电隔离的焊盘中的各个焊盘包括从所述第一铜层的第一表面经过所述第一铜层、所述第一接合层和所述金属化第一表面延伸到所述陶瓷层的第一表面的蚀刻壁,另外经过所述第一接合层的所述蚀刻壁的斜度比经过所述第一铜层的所述蚀刻壁的斜度更陡。
16.根据权利要求12所述的器件,其中所述金属化第一表面包括钼锰和镍。
17.根据权利要求12所述的器件,其中所述陶瓷层包括氧化铍、氧化铝或者氮化铝。
18.根据权利要求12所述的器件,其中所述第一铜与陶瓷接合层和所述第二铜与陶瓷接合层包括铜-银膏、铜-银箔、铜-金膏或者铜-金箔。
19.根据权利要求12所述的器件,其中所述第一铜与陶瓷接合层和所述第一铜层包括第一镀制银的铜片,并且所述第二铜与陶瓷接合层和所述第二铜层包括第二镀制银的铜片。
20.一种器件,包括:
a.陶瓷层,包括金属化第一表面和金属化第二表面;
b.第一铜层,镀制到所述金属化第一表面,其中所述第一镀制铜层和所述金属化第一表面被配置成形成多个电隔离的传导焊盘;以及
c.第二铜层,镀制到所述金属化第二表面。
21.根据权利要求22所述的器件,其中所述第一铜层和所述金属化第一表面被蚀刻以形成多个电隔离的传导焊盘,另外所述多个电隔离的焊盘中的各个焊盘通过所述陶瓷层来相互电隔离以及与所述第二铜层电隔离。
22.根据权利要求22所述的器件,其中所述多个电隔离的焊盘中的各个焊盘包括从所述第一铜层的第一表面经过所述第一铜层和所述金属化第一表面延伸到所述陶瓷层的第一表面的蚀刻壁,另外经过所述第一铜层和所述金属化第一表面的所述蚀刻壁的斜度是均匀的。
23.根据权利要求22所述的器件,其中所述多个电隔离的焊盘中的各个焊盘包括从所述第一铜层的第一表面经过所述第一铜层和所述金属化第一表面延伸到所述陶瓷层的第一表面的蚀刻壁,另外经过所述金属化第一表面的所述蚀刻壁的斜度比经过所述第一铜层的所述蚀刻壁的斜度更陡。
24.根据权利要求22所述的器件,其中所述金属化第一表面包括钼锰和镍。
25.根据权利要求22所述的器件,其中所述陶瓷层包括氧化铍、氧化铝或者氮化铝。
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WO2010017321A1 (en) | 2010-02-11 |
US8254422B2 (en) | 2012-08-28 |
CN102171897A (zh) | 2011-08-31 |
US20100035024A1 (en) | 2010-02-11 |
US20100032143A1 (en) | 2010-02-11 |
US8299604B2 (en) | 2012-10-30 |
WO2010017327A1 (en) | 2010-02-11 |
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