CN102185066A - High-power LED (light emitting diode) with improved structure - Google Patents
High-power LED (light emitting diode) with improved structure Download PDFInfo
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- CN102185066A CN102185066A CN 201110105045 CN201110105045A CN102185066A CN 102185066 A CN102185066 A CN 102185066A CN 201110105045 CN201110105045 CN 201110105045 CN 201110105045 A CN201110105045 A CN 201110105045A CN 102185066 A CN102185066 A CN 102185066A
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Abstract
The invention discloses a high-power LED (light emitting diode) with an improved structure, comprising a first semiconductor layer, an active layer and a second semiconductor layer which are overlapped in sequence from top to bottom, wherein local areas of the first semiconductor layer and the active layer can form a window, so that the local area of the second semiconductor layer can be exposed from the window, and the rest areas of the first semiconductor layer and the active layer can form a graphical structure; meanwhile, the rest area of the first semiconductor layer and the area of the second semiconductor layer, which is exposed from the window, are provided with an electrode respectively. According to the invention, since the first semiconductor layer and the active layer adopts a a graphical structure design, the active area in a chip can be reduced, heat generated by non-radiative recombination of a current carrier in the chip can be reduced, the temperature difference between the inside and the periphery of the chip can be reduced, the uneven distribution of the chip junction temperature can be improved and the reliability of a large-chip large-area LED can be improved.
Description
Technical field
The present invention relates to a kind of semiconductor lighting optoelectronic device structure, particularly a kind of have a structure improved large-power light-emitting diodes, belongs to the optical semiconductor electrical domain.
Background technology
Photoelectric device is meant a kind of semiconductor device that electric energy and luminous energy transform mutually.It comprises laser, photodetector, solar cell, light-emitting diode devices such as (LED).Wherein, LED is the photoelectric device that is most widely used in the life.In recent years, along with the continuous maturation of gallium nitride base blue light, green glow and ultraviolet leds technology, luminous efficiency improves constantly, and LED is in lighting field acquisition application more and more widely.LED as the 4th generation light source numerous advantages is arranged, as: luminous efficiency height (newest research results has realized white light 208lm/W, considerably beyond incandescent lamp and fluorescent lamp, thereby aspect energy-conservation excellent more performance is arranged); Optical wavelength range is narrow, and the full degree of color is high; As solid light source, the reliability and stability height is installed firmly; Volume is little, in light weight, point-source of light, and practical application is flexible; Based on the not mercurous toxic heavy metal that waits of the LED of gallium nitride, belong to the environmental protection light source; Can carry out digital dimming, be convenient to realize intelligent control.Therefore, LED obtains more and more general application at lighting field.
At present, LED has been widely applied to fields such as large scale display, decorative lighting, architectural lighting, traffic indication, LCD backlight, but general lighting as a bigger market, LED but is not used widely as yet.Its reason is, general lighting needs high efficiency, LED product high-power, reliable and stable, with low cost, and especially for large tracts of land, great power LED, heat conduction and heat radiation are bad to be the key issue that influences device performance.Too high by near junction temperature chip cooling and the bad chip center that causes of heat conduction, can make the chip temperature skewness, not only chip light emitting efficient can be reduced, and chip reliability can be had a strong impact on.Its reason is, for large tracts of land, high-power LED, need under big electric current, work, and this moment, led chip each part all can have the generation of heat, and since chip edge relatively easier with the heat release that produces in surrounding air, and be difficult to be transmitted to chip edge relatively near the heat that chip center partly produces, therefore the heat position youngster that is concentrated in chip center be difficult to around conduction, consequently the entire chip temperature distributing disproportionation is even, from the gradient that distributes to chip center's formation temperature around the chip.If with large-area led chip equivalence is in parallel between the equal small resistor of numerous sectional areas, so when providing electric current to led chip, there is voltage between electrode anode and the negative electrode, equivalence all is identical for the voltage at the small resistor two ends of numerous parallel connections, so for the resistance that resistivity reduces, the current value that flows through this part will increase.Because raising with temperature, semi-conductive resistivity reduces, so in case the led chip central temperature is too high, resistivity herein can be lower than chip edge part, and the electric current that causes herein flowing through will be bigger than chip edge place, shows as electric current and be focusing more on chip center's part.The concentrated meeting of electric current makes chip center partly produce more heat, further reduce the resistivity of chip center, and then cause the more serious current concentration of chip center part, thereby further produce more heat, therefore form the positive feedback effect that electric current increases and temperature raises, can cause the temperature difference of chip edge and chip center to increase gradually.This not only can reduce the luminous efficiency of led chip, and can reduce the sharp efficient of penetrating of fluorescent material when Chip Packaging, even causes led chip Yin Wendu too high and burn out.
It is inhomogeneous to improve junction temperature of chip, mainly contains several aspects: one, improve the capacity of heat transmission of device itself, make the heat of chip center be transmitted to chip edge quickly, to reach even that junction temperature of chip distributes.Two, improve the heat conduction and the heat-sinking capability of encapsulating material, heat is conducted to base plate for packaging and base from chip as early as possible, heat is outwards distributed from substrate and light fixture as early as possible.The capacity of heat transmission of device itself is relevant with the conductivity of semi-conducting material, and the conductivity of the gallium nitride material that great power LED adopted is the intrinsic property of its material itself, and the quality of material is by its growth course and technology controlling and process decision.At present, although a large amount of research concentrates on the growth aspect of gallium nitride material,, can not fundamentally solve large chip LED junction temperature problem pockety by improving the quality that material growth and process procedure improve gallium nitride material.At present, main research concentrates on the heat conductivility of encapsulating material, makees substrate such as high materials of thermal conductivity such as adopting aluminium, realizes that the heat that concentrates on the chip part is delivered in the external environment condition faster.Yet the encapsulation link is difficult to solve the junction temperature of chip problem pockety own as the part of chip exterior.
This shows, solve high-power, large chip LED junction temperature problem pockety, except the quality that improves material, also must carry out new design chip structure.
Summary of the invention
In view of above the deficiencies in the prior art, the object of the present invention is to provide a kind of structure improved large-power light-emitting diodes that has, it is by adopting the design of graphical active area and many finger electrodes, can improve junction temperature of chip phenomenon pockety, improve reliability high-power, large chip LED device.
For achieving the above object, the present invention has adopted following technical scheme:
A kind of have a structure improved large-power light-emitting diodes, comprise by folded successively first semiconductor layer, active layer and second semiconductor layer of establishing of direction from top to bottom, it is characterized in that: the regional area of described first semiconductor layer and active layer forms window, make the regional area of second semiconductor layer in described window, expose, and make all the other zones of first semiconductor layer and active layer form patterned structures, simultaneously, also all be covered with electrode on the zone that all the other of described first semiconductor layer are regional and described second semiconductor layer exposes in described window.
Preferably, aforementioned first semiconductor layer has identical patterned structures with active layer.
Further, be distributed with a plurality of windows on aforementioned first semiconductor layer and the active layer, these a plurality of windows are formed interdigitated configuration.
Former electrodes comprises anode and the negative electrode that is covered in respectively on first semiconductor layer and second semiconductor layer.
Preferably, former electrodes all has interdigitated configuration.
Further preferred, the area of aforesaid anode and negative electrode is respectively less than all the other areas regional and zone that second semiconductor layer exposes in described window of first semiconductor layer.
Aforementioned first semiconductor layer and/or second semiconductor layer have the laminated construction of being made up of more than one semi-conducting materials.
Aforementioned window runs through the set depth place that also extends to behind first semiconductor layer and the active layer in second semiconductor layer.
Compared with prior art, beneficial effect of the present invention is at least: by first semiconductor layer and active layer are carried out the patterned structures design, make the active region area of chip internal reduce, and then make the heat of the non-radiative compound generation of chip internal charge carrier reduce, chip internal and temperature difference have all around been dwindled, improve junction temperature of chip situation pockety, improved the reliability of large chip, large area LED.
Description of drawings
Fig. 1 a is the structural representation of large-power light-emitting diodes among the embodiment 1;
Fig. 1 b is the vertical view of large-power light-emitting diodes among the embodiment 1;
Fig. 1 c is the cross-sectional view of large-power light-emitting diodes among the embodiment 1;
Fig. 2 a is the structural representation of large-power light-emitting diodes among the embodiment 2;
Fig. 2 b is the vertical view of large-power light-emitting diodes among the embodiment 2;
Fig. 2 c is the cross-sectional view of large-power light-emitting diodes among the embodiment 2.
Embodiment
Large-power light-emitting diodes of the present invention, its core design thought are to adopt patterned active area structure.Particularly, this light-emitting diode comprises first semiconductor layer and second semiconductor layer that lays respectively at upper and lower layer, between this first semiconductor layer and second semiconductor layer one deck active area structure is arranged, second semiconductor layer of below is exposed in the subregion of this first semiconductor layer and active area, all the other zones of first semiconductor layer and active area then form patterned structures, and first semiconductor layer and second semiconductor layer are exposed on the outer zone and all are coated with electrode.
As a kind of embodiment preferred, aforementioned first semiconductor layer can have identical patterned structures with active area.
As another embodiment preferred, the shape of exposing zone (window area) on aforementioned first semiconductor layer and the active area is interdigitated or additional other more shape interdigitated.
Be coated with anode electrode above aforementioned first semiconductor layer, second semiconductor layer expose the zone above be coated with cathode electrode, and the shape of this negative electrode and anode all is preferably interdigitated.
Reach, the aforesaid anode shape is less than the shape of first semiconductor layer again, and cathode shape is less than the shape of the second semiconductor layer exposed portions serve.
Below in conjunction with accompanying drawing and some preferred embodiments technical scheme of the present invention is done further nonrestrictive detailed description.
Need to prove that aforesaid semiconductor layer 1,31 can be formed by contacting to be formed with source region 2 and to produce electroluminescent any semi-conducting material.
By adopting previous designs, the active region area of chip internal is significantly reduced, and then make the heat of the non-radiative compound generation of chip internal charge carrier reduce, chip internal and temperature difference have all around been dwindled, improve junction temperature of chip situation pockety, improved the reliability of large chip, large area LED.
Above embodiment is only for the usefulness that the present invention is described, but not limitation of the present invention, person skilled in the relevant technique, various conversion or the modification done under the situation that does not break away from the spirit and scope of the present invention all belong to category of the present invention.
Claims (8)
1. one kind has structure improved large-power light-emitting diodes, comprise folded successively from top to bottom first semiconductor layer, active layer and second semiconductor layer of establishing, it is characterized in that: the regional area of described first semiconductor layer and active layer forms window, make the regional area of second semiconductor layer in described window, expose, and make all the other zones of first semiconductor layer and active layer form patterned structures, simultaneously, also all be covered with electrode on the zone that all the other of described first semiconductor layer are regional and described second semiconductor layer exposes in described window.
2. according to claim 1 have a structure improved large-power light-emitting diodes, and it is characterized in that: described first semiconductor layer has identical patterned structures with active layer.
3. according to claim 1 have a structure improved large-power light-emitting diodes, it is characterized in that: be distributed with a plurality of windows on described first semiconductor layer and the active layer, these a plurality of windows are formed interdigitated configuration.
4. according to claim 1 have a structure improved large-power light-emitting diodes, and it is characterized in that: described electrode comprises anode and the negative electrode that is covered in respectively on first semiconductor layer and second semiconductor layer.
5. describedly have a structure improved large-power light-emitting diodes according to claims 1 or 4, it is characterized in that: described electrode all has interdigitated configuration.
6. have a structure improved large-power light-emitting diodes according to claims 4 are described, it is characterized in that: the areas in the zone that the area of described anode and negative electrode exposes in described window less than all the other zones of first semiconductor layer and second semiconductor layer respectively.
7. describedly have a structure improved large-power light-emitting diodes according to claims 1 or 6, it is characterized in that: described first semiconductor layer and/or second semiconductor layer have the laminated construction of being made up of more than one semi-conducting materials.
8. describedly have a structure improved large-power light-emitting diodes according to claims 1 or 3, it is characterized in that: described window runs through the set depth place that also extends to behind first semiconductor layer and the active layer in second semiconductor layer.
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| CN 201110105045 CN102185066A (en) | 2011-04-26 | 2011-04-26 | High-power LED (light emitting diode) with improved structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037306A (en) * | 2014-07-02 | 2014-09-10 | 厦门多彩光电子科技有限公司 | All-inorganic integrated LED packaging method and structure |
| CN106558596A (en) * | 2015-09-21 | 2017-04-05 | 江西宝盛半导体能源科技有限公司 | A kind of chip for LED/light source and preparation method thereof and light source |
| CN108470810A (en) * | 2018-03-29 | 2018-08-31 | 映瑞光电科技(上海)有限公司 | A kind of LED chip |
| CN113437056A (en) * | 2020-03-05 | 2021-09-24 | 财团法人工业技术研究院 | Sub-pixel structure, pixel structure and light emitting diode chip applied to same |
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| CN104037306A (en) * | 2014-07-02 | 2014-09-10 | 厦门多彩光电子科技有限公司 | All-inorganic integrated LED packaging method and structure |
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| CN106558596A (en) * | 2015-09-21 | 2017-04-05 | 江西宝盛半导体能源科技有限公司 | A kind of chip for LED/light source and preparation method thereof and light source |
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| CN113437056A (en) * | 2020-03-05 | 2021-09-24 | 财团法人工业技术研究院 | Sub-pixel structure, pixel structure and light emitting diode chip applied to same |
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Application publication date: 20110914 |