CN102185237A - High-power and 1,319 nm single-wavelength continuous laser device - Google Patents
High-power and 1,319 nm single-wavelength continuous laser device Download PDFInfo
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- CN102185237A CN102185237A CN 201110068452 CN201110068452A CN102185237A CN 102185237 A CN102185237 A CN 102185237A CN 201110068452 CN201110068452 CN 201110068452 CN 201110068452 A CN201110068452 A CN 201110068452A CN 102185237 A CN102185237 A CN 102185237A
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Abstract
The invention provides a design method for a high-power and 1,319 nm single-wavelength continuous output solid laser device, which mainly comprises: three sets of laterally encircled pumping laser diode modules, three laser crystals, a resonator rear cavity mirror and an output mirror. After absorbing the pumping energy of the laser diode, the laser crystals generate fluorescent radiation with a plurality of wavelengths including 1,064nm, 1,319nm and 1,338nm; and under the common action of the coating films on the end faces of the laser crystals and the coating film on the resonator cavity mirror, the resonation of the laser with wavelengths of 1,064nm and 1,338nm is restrained, and the laser with the wavelength of 1,319 nm is continuously radiated and amplified, coupled by the output mirror and then output to generate laser output with the wavelength of 1,319nm at output power of up to 300W. The laser device has the advantages of compact structure, stable output, high laser beam quality and the like, the high-power laser device with the wavelength of 1,319nm is widely applied in the fields of medical treatment, industry, scientific research and the like, and after frequency doubling, high-power red light with a wavelength of 660nm can be generated, and thus the laser device can be used for laser show of large-scale activities and city landmarks.
Description
Technical field:
The present invention relates to a kind of laser aid of single wavelength high power 1319nm wavelength continuous laser output.
Background technology:
At present, can realize near the directly high power solid state laser of output of the single wavelength laser of 1.3 mu m wavebands, technological means is very limited, this has limited the extensive use of laser technology at scientific research, medical science, industrial circle, can realize that near the laser crystal material of the Laser emission of 1.3 μ m mainly is to mix Nd
3+Host material, wherein form and be first-selected laser crystal material with combination property the best of Nd:YAG crystal, but also there is weak point in this material, the most outstanding with 1064nm, 1318nm, 1319nm in the fluorescence emission spectrum of this crystal, these three spectral lines all belong to the same energy level of going up, wherein, the fluorescence intensity maximum of 1064nm spectral line, be about 4 times of other two the intensity of spectral line, in order to realize the output of 1319nm wavelength laser, at first must suppress the laser generation of 1064nm wavelength, secondly, according to the laser threshold horse-power formula:
δ in the formula
0=T+ γ
i, γ wherein
iBe the resonant cavity loss by one path, T is the resonant cavity total transmittance; v
pBe the pumping light frequency, Z is a working-laser material length, σ
eBe stimulated emission cross section, τ
fBe the spontaneous radiation life-span of energy level, η
fBe quantum efficiency, J is the overlapping integration.Because in same resonant cavity, 1319 is identical with 1338 wavelength pumping conditions, and have same upward energy level, so their correspondences
τ
f, η
fAll identical with the J value, the ratio σ of the stimulated emission cross section of two wavelength
E1319: σ
E1338=0.95, but the following formula abbreviation is:
By formula (2) as can be known; the laser generation threshold value of 1319nm and two wavelength of 1338nm is basic identical; on the basis that suppresses the vibration of 1064nm wavelength laser; if do not take special measure laser can occur dual wavelength output usually; referring to Fig. 1, in the real work, because there is competition in two patterns; often cause laser in the stage power big ups and downs of starting working, be easy to cause the damage of optical component.In order to realize the output of 1319nm single wavelength, require resonant cavity should effectively suppress 1064nm and 1338nm laser generation.For the 1338nm wavelength, because it and 1319nm wavelength are approaching, the general mode of inserting prism or grating in the chamber that adopts suppresses its vibration, but, because going into the optics element, the chamber interpolation cause resonant cavity insertion loss bigger, be difficult to realize the output of higher power level, and because intracavity power density is higher, the prism of insertion or grating are easy to damage, and are difficult to obtain actual application, the objective of the invention is to overcome above-mentioned the deficiencies in the prior art, provide a kind of single wavelength high power continuous 1319nm laser, it is simple in structure, and output wavelength is single, and power output is stable, power instability RMS＜1%.
Summary of the invention:
For solving the problems of the technologies described above, the present invention has adopted following technical scheme:
This laser comprises: the total reflective mirror system that sets gradually on horizontal optical path, first laser crystal, second laser crystal, the 3rd laser crystal, outgoing mirror system, three semiconductor pumping modules carry out profile pump around above-mentioned three laser crystals respectively, wherein:
This total reflective mirror system comprises: two-dimension optical adjustment rack, total reflective mirror, total reflective mirror cooling device;
This outgoing mirror system comprises: two-dimension optical adjustment rack, plane output coupling mirror, plane output coupling mirror cooling device;
Wherein total reflective mirror adopts the arrowband plated film, and filming parameter is: 1064nm wavelength light transmitance T
1064〉=50%, 1319nm wavelength light reflectivity R
1319〉=99.9%, 1338nm wavelength light transmitance T
1338〉=80%; The outgoing mirror filming parameter is: 1064nm wavelength light transmitance T
1064〉=95%, 1319nm wavelength laser coupling output rating T
1319The scope of choosing be 15%～25%;
The end face of each laser crystal all is coated with 1064nm and the two antireflective coatings of 1319nm wavelength, and transmitance is respectively T
1064＞99% and T
1319＞99.9%.
Each semiconductor pumping module comprises: pumping frame, laser diode, waveguide sheet, and diffuse reflection wall; Laser diode, the waveguide sheet, and the diffuse reflection wall is arranged on the pumping frame, laser diode is divided into 3 row, evenly around laser crystal, the light that laser diode sends is coupled into laser crystal through the waveguide sheet, and the pump light that is not directly absorbed finally is coupled in the corresponding laser crystal after anti-wall reflects through overflowing;
Three semiconductor pumping modules carry out profile pump around three laser crystals respectively, laser crystal produces the excited fluorescence radiation of a plurality of wavelength after absorbing the LD pump energy, under the acting in conjunction of each laser crystal end face coating rete and two resonant cavity chamber mirrors, the excited fluorescence radiation of 1319nm wavelength constantly is amplified to output in resonant cavity, the fluorescence of other wavelength then is suppressed and can't produces laser generation, thereby only contains the light of 1319nm single wavelength in the feasible output laser.
Three laser crystal materials are the Nd:YAG crystal, and it adopts the bonding crystal, and crystal diameter is 4.5mm, and doping content is 0.8%, and doped region length is 90mm, and non-doped region length is 5mm.
Two end faces of each laser crystal are carved with the identical concave surface of radius of curvature respectively, and it is 1000～2000mm that its concave is chosen scope.
Concave is chosen for 1500nm.
The resonant cavity of this laser adopts symmetrical average chamber, and first laser crystal, second laser crystal and the 3rd laser crystal adopt the uniformly-spaced form of serial connection.Total reflective mirror is d to the distance between first crystal, is spaced apart 2d between each laser crystal, and the distance between outgoing mirror to the three laser crystals is d, and wherein d is the thermal focal length value that semiconductor pumping module is operated in laser crystal under the rated power condition.
Outgoing mirror and total reflective mirror are made by quartz crystal, all are level crossing, and its one side outside the chamber is left on the annular water flowing metal heat sink of light hole by the heat-conducting glue center of sticking to.
The thickness of waveguide sheet is 0.8mm.
Description of drawings:
Fig. 1 is common 1.3 mum wavelength Nd:YAG lasers output light spectrogram
Fig. 2 is the application's laser structure figure
Fig. 3 is the semiconductor pumping module structure chart
Fig. 4 is total reflective mirror arrowband plated film figure
Fig. 5 is that the arrowband plated film suppresses the effect contrast figure to 1338nm laser, a) for adopting emission laser spectroscopy figure under the common plated film mode, b) is the application's laser emission spectrum figure
Fig. 6 is outgoing mirror cooling device figure, a) is three-dimensional structure diagram, b) is planar side view
Fig. 7 is bonding Nd:YAG crystal structure figure
Wherein, Reference numeral 1-3 is three pump modules respectively, and 4 is laser diode, and 5 are the waveguide sheet, 6 are the diffuse reflection wall, and 7 is laser crystal, and 8 are the pumping frame, and 9 is fused silica glass, 10 is light hole, and 11 is heat sink for water flowing, and 12 is doping YAG crystal, and 13 is non-doping YAG crystal.
Embodiment:
The present invention will be further described below in conjunction with accompanying drawing: as shown in Figure 2, export the whole light channel structure figure of solid state laser continuously for 1319nm, laser mainly contains diode (led) module and two resonator mirrors of three profile pumps and forms, in each pump module, adopting wall scroll 40W output wavelength is that the continuous laser diode array (CW-40W) of 808nm is as pump unit, the laser diode of 15 CW-40W is divided into 3 rows, be coupled in the Nd:YAG crystal by the waveguide sheet, each pump head can provide the pump power of 600W, the pump module structure as shown in Figure 3, the optical coupling afferent echo guide card that diode sends, will be through after repeatedly reflecting, be coupled in the Nd:YAG crystal, realize being coupled than high-effect long distance between diode end and gain medium, the waveguide sheet can carry out homogenize to the pump light cross section that LD sends, and the pump light that is not directly absorbed is finally absorbed by crystal after anti-wall reflects through overflowing, improve the utilance of pump light, also further improved the uniformity of pumping.When the thickness of waveguide sheet was 0.8mm, the power output and the output mode of laser reached optimal effectiveness.
Resonant cavity adopts symmetrical average chamber, and first laser crystal, second laser crystal and the 3rd laser crystal adopt the uniformly-spaced form of serial connection.Total reflective mirror is d to the distance between first crystal, be spaced apart 2d between each laser crystal, distance between outgoing mirror to the three laser crystals is d, wherein d is the thermal focal length value of semiconductor pumping module, to obtain bigger basement membrane volume, improve the output laser beam quality, make laser increase interval interior resonance chamber simultaneously and do not have non-steady district, make that power output can linear growth at pump power.
Anti-mirror and output coupling mirror all adopt the good quartz crystal materials of heat conductivility behind the resonant cavity, and two faces of eyeglass are the plane all, are of a size of
The outgoing mirror filming parameter is: 1064nm wavelength light transmitance T
1064〉=95%, 1319nm wavelength laser coupling output rating is T
1319The scope of choosing 15%～20%, because two spectral lines of 1338nm and 1319nm are very little at interval,, reduce the loss of 1319nm simultaneously in order fully to suppress the vibration of 1318nm wavelength laser, here adopt arrowband plated film mode, anti-thereafter mirror filming parameter is for 1338nm transmitance T
1338〉=80%, R
1319〉=99.9%, the plated film curve as shown in Figure 4.
Adopting above filming parameter is to consider on the anti-mirror in back to realize 1338nm transmitance T simultaneously
1338〉=80% and 1319nm reflectivity R
1319〉=99.9% two technical parameter can't be realized the control to the 1064nm wavelength parameter technically more simultaneously, so require to take into full account the inhibition to the 1064nm wavelength laser on output coupling mirror, makes its transmitance T
1064〉=95%, guarantee the enough big loss of 1064nm wavelength laser, can't produce vibration, adopt the effect of this technology to find out from two groups of spectrum test curve charts of Fig. 5, after the employing arrowband plated film mode, the vibration of 1338nm wavelength is suppressed fully.
Because rete is thicker on two chamber mirrors, especially total reflective mirror after, its thicknesses of layers is tens of times of common plated film rete, be very easy to because heat absorption causes the rete damage, the destruction that seriously causes for fear of rete heat absorption, two resonator mirrors have been carried out radiating treatment, its structure as shown in Figure 6, two chamber mirrors adopt the metal heat sink of water flowing to dispel the heat, one side outside the chamber is sticked on the water flowing metal heat sink by heat-conducting glue, leave circular light hole for the heat sink center of output coupling mirror, adopt this kind mode that rete resisting laser damage ability is promoted greatly.
In order to insert loss in the chamber of reducing the 1319nm wavelength, avoid producing between two end faces of laser crystal the self-oscillation of 1064nm wavelength simultaneously, the end face of laser crystal is coated with 1064nm and the two antireflective coatings of 1319nm, and transmitance is respectively T
1064＞99% and T
1319＞99.9%, in order to improve the anti-damage ability of YAG crystal end-face rete, here adopt the bonding crystal, reduce of the absorption of YAG crystal end-face part to oscillation light in the chamber, reduce the end face temperature rising that its heat absorption causes, make the rete substrate keep lower temperature, as shown in Figure 7, the Nd:YAG crystal diameter is 4.5mm, and doping content is 0.8%, and doped region length is 90mm, non-doped region length is 5mm, for part compensates thermal lensing effect, be carved with the concave surface that radius is R at the end face of two non-doping, the span of R is 1000～2000mm.
Claims (7)
1. single wavelength high power 1319nm laser is characterized in that:
This laser comprises: the total reflective mirror system that sets gradually on horizontal optical path, first laser crystal, second laser crystal, the 3rd laser crystal, outgoing mirror system, three semiconductor pumping modules carry out profile pump around above-mentioned three laser crystals respectively, wherein:
This total reflective mirror system comprises: two-dimension optical adjustment rack, total reflective mirror, total reflective mirror cooling device;
This outgoing mirror system comprises: two-dimension optical adjustment rack, plane output coupling mirror, plane output coupling mirror cooling device;
Wherein total reflective mirror adopts the arrowband plated film, and filming parameter is: 1064nm wavelength light transmitance T
1064〉=50%, 1319nm wavelength light reflectivity R
1319〉=99.9%, 1338nm wavelength light transmitance T
1338〉=80%; Outgoing mirror rete filming parameter is: 1064nm wavelength light transmitance T
1064〉=95%, 1319nm wavelength laser coupling output rating T
1319The scope of choosing be 15%～25%;
The end face of each laser crystal all is coated with 1064nm and the two antireflective coatings of 1319nm, and transmitance is respectively T
1064＞95% and T
1319＞99.9%.
Each this semiconductor pumping module comprises: pumping frame, laser diode, waveguide sheet, and diffuse reflection wall; Laser diode, the waveguide sheet, and the diffuse reflection wall is arranged on the pumping frame, laser diode is divided into 3 row, be centered around around the laser crystal, the light that laser diode sends is coupled into laser crystal through the waveguide sheet, and the pump light that is not directly absorbed finally is coupled in the corresponding laser crystal after anti-wall reflects through overflowing;
Three semiconductor pumping modules carry out profile pump around three laser crystals respectively, laser crystal produces the excited fluorescence radiation of a plurality of wavelength after absorbing the LD pump energy, under the acting in conjunction of each laser crystal end face coating rete and two resonant cavity chamber mirrors, the excited fluorescence radiation of 1319nm wavelength constantly is amplified to output in resonant cavity, the fluorescence of other wavelength then is suppressed and can't produces laser generation, thereby only contains the light of 1319nm single wavelength in the feasible output laser.
2. laser according to claim 1 is characterized in that: three laser crystal materials are the Nd:YAG crystal, and it adopts the bonding crystal, and crystal diameter is 4.5mm, and doping content is 0.8%, and doped region length is 90mm, and non-doped region length is 5mm.
3. according to the described laser of claim 1-2, it is characterized in that: two end faces of each laser crystal are carved with the identical concave surface of radius of curvature respectively, and it is 1000～2000mm that its concave is chosen scope.
4. laser according to claim 3, it is characterized in that: concave is chosen for 1500mm.
5. according to the described laser of claim 1-4, it is characterized in that: the resonant cavity of this laser adopts symmetrical average chamber, and first laser crystal, second laser crystal and the 3rd laser crystal adopt the uniformly-spaced form of serial connection.Total reflective mirror is d to the distance between first crystal, is spaced apart 2d between each laser crystal, and the distance between outgoing mirror to the three laser crystals is d, and wherein d is the thermal focal length value that semiconductor pumping module is operated in laser crystal under the rated power condition.
6. according to the described laser of claim 1-5, it is characterized in that: outgoing mirror and total reflective mirror are all made by quartz crystal, all are level crossing, and its one side outside the chamber is left on the annular water flowing metal heat sink of light hole by the heat-conducting glue center of sticking to.
7. according to the described laser of claim 1-6, it is characterized in that: the thickness of described waveguide sheet is 0.8mm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762490A (en) * | 2014-01-16 | 2014-04-30 | 西安电子科技大学 | Laser resonant cavity method for improving optical beam quality through thermal lenses |
| CN104577657A (en) * | 2013-10-22 | 2015-04-29 | 无锡津天阳激光电子有限公司 | Optical fiber laser for outputting lasers with wave lengths of 808nm, 660nm, 532nm and 532nm at four ends for anemoscope |
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| US20060120418A1 (en) * | 2004-12-07 | 2006-06-08 | Imra America, Inc. | Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems |
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| US20070280324A1 (en) * | 2006-06-06 | 2007-12-06 | Giuliano Piccinno | Laser apparatus for generating high energy pulses of short duration, and process for generating said laser pulse |
| JP2009514236A (en) * | 2005-10-28 | 2009-04-02 | レーザースコープ | High power, end-pumped laser with off-peak pumping |
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2011
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Patent Citations (5)
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| CN1421966A (en) * | 2001-11-23 | 2003-06-04 | 中国科学院福建物质结构研究所 | 1.3mum waveband superpulse Nd-doped crystal laser |
| US20060120418A1 (en) * | 2004-12-07 | 2006-06-08 | Imra America, Inc. | Yb: and Nd: mode-locked oscillators and fiber systems incorporated in solid-state short pulse laser systems |
| CN1825721A (en) * | 2005-02-22 | 2006-08-30 | 中国科学院福建物质结构研究所 | High-power high-quality solid laser |
| JP2009514236A (en) * | 2005-10-28 | 2009-04-02 | レーザースコープ | High power, end-pumped laser with off-peak pumping |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104577657A (en) * | 2013-10-22 | 2015-04-29 | 无锡津天阳激光电子有限公司 | Optical fiber laser for outputting lasers with wave lengths of 808nm, 660nm, 532nm and 532nm at four ends for anemoscope |
| CN103762490A (en) * | 2014-01-16 | 2014-04-30 | 西安电子科技大学 | Laser resonant cavity method for improving optical beam quality through thermal lenses |
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