CN102244082A - Manufacturing method of array substrate - Google Patents
Manufacturing method of array substrate Download PDFInfo
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- CN102244082A CN102244082A CN2010101786367A CN201010178636A CN102244082A CN 102244082 A CN102244082 A CN 102244082A CN 2010101786367 A CN2010101786367 A CN 2010101786367A CN 201010178636 A CN201010178636 A CN 201010178636A CN 102244082 A CN102244082 A CN 102244082A
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Abstract
The invention relates to a manufacturing method of an array substrate. The manufacturing method comprises the following steps: providing a substrate, depositing and etching a first metal layer on the substrate, forming a first metal interconnection line, a first short-circuit line and a first electrostatic discharge protective electrode; forming and etching an insulating layer respectively above the first metal interconnection line, the first short-circuit line and the first electrostatic discharge protective electrode, respectively forming via holes on the insulating layers above the first metal interconnection line, the first short-circuit line and the first electrostatic discharge protective electrode; depositing and etching second metal layers on the insulating layers, and forming a second metal interconnection line which is electrically connected with the first metal interconnection line through a corresponding via hole, a second short-circuit line and a second electrostatic discharge protective electrode electrically connected with the first electrostatic discharge protective electrode through a corresponding via hole, wherein the second short-circuit line connects the second metal interconnection line and the second electrostatic discharge protective electrode; etching and for disconnecting the first short-circuit line. In the method, the electrostatic discharge protection on an X-ray detector is started from the first process without increasing processing steps.
Description
Technical field
The present invention relates to manufacturing method of array base plate, particularly have the manufacturing method of array base plate of electrostatic protection.
Background technology
The development of modern medicine has changed people's life fully, and a lot of illnesss can be won golden hour in the early stage with regard to knowing, and the pathology of organ can clearly see that this all be unable to do without the medical imaging technology for example is the X ray through-transmission technique.Along with development of science and technology, the X ray through-transmission technique has moved towards digitlization, in the digital X ray technology the most the tester paid close attention to of people be X-ray detector.
Please refer to Fig. 1, Fig. 1 is the array substrate circuit structural representation of existing X-ray detector.Described array base palte comprises the glass substrate (not shown), comprises viewing area 101 on the described glass substrate, and the zone beyond the viewing area 101 is an outer peripheral areas.Described viewing area comprises some pixel cells, and each pixel cell comprises the thin-film transistor 1011 that a photodiode 1012 links to each other with negative electrode with photodiode 1012.Also have multi-strip scanning line 1013 and data wire 1014 on the described array base palte, described scan line 1013 and data wire 1014 mutual vertical distribution, wherein the thin-film transistor 1011 of each pixel cell is controlled by corresponding scanning line 1013 and data wire 1014.Described scan line 1013 or data wire 1014 are worked under the control of the peripheral processes circuit that is positioned at non-display area.Described photodiode 1012 is used for opto-electronic conversion, and described thin-film transistor 1011 is as the control switch of photodiode 1011, and under the driving of described scan line 1013, the signal of telecommunication of photodiode being exported through data wire is transferred to the peripheral processes circuit.By the peripheral processes circuit the described signal of telecommunication is handled back output.
In the array base palte manufacturing process of X-ray detector, because some external factor, for example continuous process operations, carrying or environmental change etc., the accumulation that can on panel, produce electrostatic charge usually.Because glass itself is megohmite insulant, unless therefore suitable discharge channel is arranged, electrostatic charge can rest on glass baseplate surface always.When static charge accumulation after some, will produce discharge (ESD, Electrostatic Discharge).The time that static discharge takes place is very short, thereby a large amount of electric charges shifts in a short period of time and will produce high electric current and will cause circuit or substrate itself on the array base palte to be destroyed.
Prior art is for fear of static discharge occurring; the general employing links together all metal electrodes in the X-ray detector with short-circuit line (short bar) and electrostatic discharge (ESD) protection electrode; with the electrostatic discharge (ESD) protection electrode grounding, described electrostatic charge discharges by short-circuit line and electrostatic discharge (ESD) protection electrode.After the array base palte of X-ray detector completes, short-circuit line is excised with laser tangent line equipment.The method of described electrostatic discharge (ESD) protection needs special-purpose laser tangent line equipment, common described laser tangent line equipment price costliness.The method of described electrostatic discharge (ESD) protection also needs to increase unnecessary manufacturing step simultaneously, and increases the manufacturing cost that processing step can increase plate amorphous silicon X-ray detector.Therefore, prior art generally is to form electrostatic discharge protective equipment in the process of the array base palte of making X-ray detector.
Provide for the United States Patent (USP) of US7217591B2 as the patent No. X-ray detector array base palte manufacture method.To the manufacture method of described array base palte be described below.Fig. 2 to Fig. 6 is the manufacture method schematic top plan view of prior art array base palte.
At first, with reference to figure 2, and in conjunction with Fig. 7, Fig. 7 is the cross-sectional view of Fig. 2 along the AA line.Substrate 100 is provided, and described substrate 100 is a glass substrate.
Then, on described substrate 100, deposit the first metal layer, described the first metal layer is carried out etching, form the first metal interconnection line 101.
Then, with reference to figure 3, and in conjunction with Fig. 8, Fig. 8 is the cross-sectional view of Fig. 3 along the AA line.Form insulating barrier 102 on described substrate 100, described insulating barrier 102 is positioned at the described first metal interconnection line 101 tops, and has via hole 103, and described via hole 103 exposes the described first metal interconnection line 101.
Then, with reference to figure 4, and in conjunction with Fig. 9, Fig. 9 is the cross-sectional view of Fig. 4 along the AA line.Deposition second metal level on described insulating barrier 102; described second metal level is carried out etching; form the second metal interconnection line 104, electrostatic discharge (ESD) protection electrode 106, short-circuit line 105; the two ends of described short-circuit line 105 connect electrostatic discharge (ESD) protection electrode 106 and the described second metal interconnection line 104, described electrostatic discharge (ESD) protection electrode 106 common ground connection respectively.The described second metal interconnection line 104 contacts with the first metal interconnection line 101 at via hole 103 places; so that follow-up formation welded gasket (bonding pad); short-circuit line 105 has constituted electrostatic discharging path with electrostatic discharge (ESD) protection electrode 106 simultaneously, and the electrostatic charge in the successive process discharges by short-circuit line 105, electrostatic discharge (ESD) protection electrode 106.
Then, with reference to figure 5, and in conjunction with Figure 10, Figure 10 is the cross-sectional view of Fig. 5 along the AA line.Deposition forms passivation layer 107 above the described second metal interconnection line 104, electrostatic discharge (ESD) protection electrode 106, short-circuit line 105, and described passivation layer 107 has via hole 108 above described short-circuit line 105, and described via hole 108 exposes short-circuit line 105.
At last, with reference to figure 6, and in conjunction with Figure 11, Figure 11 is the cross-sectional view of Fig. 6 along the AA line.Partial short circuit line 105 to via hole 108 belows carries out etching, exposes substrate 100, and short-circuit line 105 removes, and the array base palte of electrostatic discharging path and X-ray detector disconnects.
The electrostatic discharge (ESD) protection electrode 106 that said method forms later in the second layer metal etching, short-circuit line 105 provide electrostatic discharge (ESD) protection for the substrate in the follow-up manufacturing process and the device on the substrate; but the device in second layer metal and the former manufacturing process thereof on substrate and the substrate is not protected.
Therefore, need a kind of new manufacturing method of array base plate, can just carry out electrostatic protection the first road technology to the device on substrate and the substrate.
Summary of the invention
The problem that the present invention solves has provided a kind of manufacturing method of array base plate, can just carry out electrostatic protection to the device on substrate and the substrate to the first road technology.
In order to address the above problem, the invention provides a kind of manufacture method with array base palte of electrostatic protection, described method comprises:
Substrate is provided, on described substrate, deposits the first metal layer;
Described the first metal layer is carried out etching, form the first metal interconnection line, first short-circuit line, the first electrostatic discharge (ESD) protection electrode, described first short-circuit line connects the first metal interconnection line and the first electrostatic discharge (ESD) protection electrode;
Above described first short-circuit line, the first metal interconnection line, the first electrostatic discharge (ESD) protection electrode, form insulating barrier;
Described insulating barrier is carried out etching, and the insulating barrier above described first short-circuit line, the first metal interconnection line, the first electrostatic discharge (ESD) protection electrode forms via hole respectively;
Deposition second metal level above described insulating barrier;
Described second metal level is carried out etching, the second metal interconnection line that formation is electrically connected with the first metal interconnection line by via hole, second short-circuit line, by the second electrostatic discharge (ESD) protection electrode of the via hole and the first electrostatic discharge (ESD) protection electrode, described second short-circuit line connects the second metal interconnection line and the second electrostatic discharge (ESD) protection electrode;
By the via hole on described first short-circuit line described first short-circuit line is carried out etching, the described first short-circuit line etching is disconnected.
Optionally, with described first short-circuit line etching disconnection with to finishing in the same etching process of being etched in of second metal level.
Optionally, described first short-circuit line and described second short-circuit line stagger mutually.
Optionally, described array base palte is the X-ray detector array base palte.
Optionally, the described the first metal layer utilization of described formation and etching be the step that forms the film crystal tube grid in the X-ray detector array base palte manufacturing process, the described first metal interconnection line is electrically connected described film crystal tube grid.
Optionally, described the first metal layer is that method by physical vapour deposition (PVD) forms.
Optionally, the etching to described the first metal layer comprises wet etching.
Optionally, described formation and the described insulating barrier of etching are the steps that forms insulating barrier and etching insulating barrier in the X-ray detector array base palte manufacturing process.
Optionally, described etching to described insulating barrier comprises dry etching.
Optionally, described insulating layer material is a silicon nitride.
Optionally, described formation and the described second metal level utilization of etching is to form the source-drain electrode of thin-film transistor and the step of photodiode underlying metal in the X-ray detector array base palte manufacturing process.
Optionally, described etching to second metal level comprises wet etching.
Optionally, the manufacture method of described array base palte also comprises:
On the described second metal interconnection line, second short-circuit line, the second electrostatic discharge (ESD) protection electrode, form passivation layer;
Described passivation layer is carried out etching, form via hole in the passivation layer above described second short-circuit line;
Deposition three-layer metal above passivation layer;
Described three-layer metal is carried out etching;
Via hole by second short-circuit line top carries out etching to described second short-circuit line, and the described second short-circuit line etching is disconnected.
Optionally, with described second short-circuit line etching disconnection with to finishing in the same etching process of being etched in of the 3rd metal level.
Optionally, finish in same etching process with described second short-circuit line etching disconnection with described first short-circuit line etching disconnection.
Optionally, described formation and the described passivation layer of etching are the steps that forms passivation layer and etching passivation layer in the X-ray detector array base palte manufacturing process.
Optionally, the described three-layer metal of described formation and etching is to utilize formation and the etch step that forms photoresist layer.
Compared with prior art, the present invention has following advantage: deposition and etching the first metal layer, form the first metal interconnection line, first short-circuit line, the first electrostatic discharge (ESD) protection electrode, described first short-circuit line connects the first metal interconnection line and the first electrostatic discharge (ESD) protection electrode, and the array base palte of described first short-circuit line and the first electrostatic discharge (ESD) protection electrode pair X-ray detector carries out electrostatic discharge (ESD) protection; Deposition and etching second metal level; the second metal interconnection line that formation is electrically connected with the first metal interconnection line by via hole, second short-circuit line, the second electrostatic discharge (ESD) protection electrode by the via hole and the first electrostatic discharge (ESD) protection electrode; described second short-circuit line connects the second metal interconnection line and the second electrostatic discharge (ESD) protection electrode, and the array base palte that described second short-circuit line and the second electrostatic discharge (ESD) protection electrode replace the first section route and the first electrostatic discharge (ESD) protection electrode pair X-ray detector carries out electrostatic discharge (ESD) protection.Described method is carried out electrostatic discharge (ESD) protection from the first road technology of the manufacture process of the array base palte of X-ray detector to it, avoids static discharge that array base palte and the element that forms above thereof are damaged.
Further, described formation and the utilization of etching the first metal layer is the step that forms the film crystal tube grid in the X-ray detector array base palte manufacturing process; Described first short-circuit line is disconnected and second metal level is etched in same etching process finish; The deposition and the step utilization of etching second metal level be the step of the underlying metal of the source-drain electrode of formation thin-film transistor in the manufacturing process of X-ray detector array base palte and photodiode; The second short-circuit line etching disconnected and the 3rd metal level is etched in the same etching cavity etching and finish, and described method utilizes the step that forms passivation layer and etching passivation layer in the X-ray detector array base palte manufacturing process, do not increase unnecessary processing step.
Description of drawings
Fig. 1 is the array substrate circuit structural representation of existing X-ray detector.
Fig. 2 to Fig. 6 is the manufacture method schematic top plan view of prior art array base palte.
Fig. 7 is the cross-sectional view of Fig. 2 along the AA line.
Fig. 8 is the cross-sectional view of Fig. 3 along the AA line.
Fig. 9 is the cross-sectional view of Fig. 4 along the AA line.
Figure 10 is the cross-sectional view of Fig. 5 along the AA line.
Figure 11 is the cross-sectional view of Fig. 6 along the AA line.
Figure 12, Figure 14, Figure 17, Figure 20, Figure 23 are the manufacture method schematic top plan view of array base palte of the present invention.
Figure 13 is the cross-sectional view of Figure 12 along the BB line.
Figure 15 is the cross-sectional view of Figure 14 along the BB line.
Figure 16 is the cross-sectional view of Figure 14 along the CC line.
Figure 18 is the cross-sectional view of Figure 17 along the BB line.
Figure 19 is the cross-sectional view of Figure 17 along the CC line.
Figure 21 is the cross-sectional view of Figure 20 along the BB line.
Figure 22 is the cross-sectional view of Figure 20 along the CC line.
Figure 24 is the cross-sectional view of Figure 23 along the BB line.
Figure 25 is the cross-sectional view of Figure 23 along the CC line.
Embodiment
In the production process of the array base palte of X-ray detector; in order to guarantee that array base palte and the thin-film transistor that forms, photodiode avoid being subjected to the destruction of static discharge on described array base palte; do not increase simultaneously processing step; the invention provides a kind of manufacture method with array base palte of electrostatic protection; described method begins the device on the substrate of substrate and follow-up formation is protected in the first road technology of the array base palte manufacturing of X-ray detector; avoid the accumulation of electrostatic charge in the production process, described method comprises:
Substrate is provided, on described substrate, deposits the first metal layer;
Described the first metal layer is carried out etching, form the first metal interconnection line, first short-circuit line, the first electrostatic discharge (ESD) protection electrode, described first short-circuit line connects the first metal interconnection line and the first electrostatic discharge (ESD) protection electrode;
Above described first short-circuit line, the first metal interconnection line, the first electrostatic discharge (ESD) protection electrode, form insulating barrier;
Described insulating barrier is carried out etching, and the insulating barrier above described first short-circuit line, the first metal interconnection line, the first electrostatic discharge (ESD) protection electrode forms via hole respectively;
Deposition second metal level above described insulating barrier;
Described second metal level is carried out etching, the second metal interconnection line that formation is electrically connected with the first metal interconnection line by via hole, second short-circuit line, by the second electrostatic discharge (ESD) protection electrode of the via hole and the first electrostatic discharge (ESD) protection electrode, described second short-circuit line connects the second metal interconnection line and the second electrostatic discharge (ESD) protection electrode;
By the via hole on described first short-circuit line described first short-circuit line is carried out etching, the described first short-circuit line etching is disconnected.
Need to prove; the present invention with the manufacture method of the array base palte of X-ray detector as preferred embodiment; manufacture method to array base palte with electrostatic discharge (ESD) protection describes; described method forms the X-ray detector with electrostatic protection; realized each step of X-ray detector manufacturing process is carried out electrostatic protection; but described method is not limited to the array base palte of X-ray detector, and for example described method can also form the array base palte of the display panels with electrostatic protection.
The array base palte of X-ray detector of the present invention comprises interior zone and outer peripheral areas, and manufacture method of the present invention is that example illustrates with the substrate manufacture process of outer peripheral areas only.Common described outer peripheral areas comprises pad area, shorting region, electrostatic discharge (ESD) protection district.Described pad area is used to form the welded gasket that the thin-film transistor of interior zone links to each other with the outside, and the static that shorting region and electrostatic discharge (ESD) protection district are used for forming discharges.Structure at the interior zone of described substrate is same as the prior art, and the known technology as those skilled in the art does not add diagram.
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.Figure 12, Figure 14, Figure 17, Figure 20, Figure 23 are the manufacture method schematic top plan view of array base palte of the present invention.
At first; please refer to Figure 12, the substrate (not shown) is provided, described substrate is a glass substrate; and substrate described in the present embodiment comprises pad area (not shown), shorting region (not shown), electrostatic discharge (ESD) protection district (not shown) as the array base palte of X-ray detector.
On described substrate, deposit the first metal layer; described the first metal layer is carried out etching; form the first metal interconnection line 201 at described pad area; form first short-circuit line 202 at described shorting region; at electrostatic discharge (ESD) protection district formation the carrying out first electrostatic discharge (ESD) protection electrode 203; described first short-circuit line 202 connects the first metal interconnection line 201 and the first electrostatic discharge (ESD) protection electrode 203, constitutes first electrostatic discharging path.
Described structure please refer to Figure 13 in order better to illustrate, Figure 13 is the cross-sectional view of Figure 12 along the BB line.Described substrate 200 tops have formed first short-circuit line 202, the first metal interconnection line 201, the first electrostatic discharge (ESD) protection electrode, 203, the first metal interconnection lines 201 and have linked to each other by first short-circuit line 202 with the first electrostatic discharge (ESD) protection electrode 203.The described first metal interconnection line 201 is electrically connected described film crystal tube grid.Usually, the described first metal interconnection line 201 is used for providing grid control signal to thin-film transistor as the gate control lines (being called scan line again) of thin-film transistor.The described first electrostatic discharge (ESD) protection electrode, 203 ground connection.In follow-up manufacture process, any one with lead that the first metal interconnection line 201 links to each other on electrostatic charge can discharge by described first short-circuit line 202 and the first electrostatic discharge (ESD) protection electrode 203.
As the preferred embodiments of the present invention, the step utilization of described deposition the first metal layer and the described the first metal layer of etching be the step that forms the film crystal tube grid in the manufacturing process of X-ray detector array base palte, do not need to increase extra processing step like this.The position and the structure of described grid are same as the prior art, and the known technology as those skilled in the art is not described in detail at this.
In the present embodiment, described the first metal layer be that method by physical vapour deposition (PVD) forms.The material of described the first metal layer is a molybdenum.The lithographic method of described the first metal layer comprises the method for wet etching.
Then; with reference to Figure 14; at described first short-circuit line 202; the first metal interconnection line 201; the first electrostatic discharge (ESD) protection electrode, 203 tops form the insulating barrier (not shown); described insulating barrier is carried out etching; insulating barrier above first short-circuit line 202 forms via hole 206; expose described first short-circuit line 202; above the first metal interconnection line 201 of pad area, form via hole 205; expose described first metal interconnecting wires 201, and formation via hole 213 exposes the described first electrostatic discharge (ESD) protection electrode 203 above the first electrostatic discharge (ESD) protection electrode 203 in electrostatic discharge (ESD) protection district.Described via hole 206 extends to substrate surface, exposes described substrate.
As the preferred embodiments of the present invention, described formation insulating barrier and the described insulating barrier utilization of etching be to form the step of insulating barrier of thin-film transistor and the etch step that described insulating barrier is carried out in the X-ray detector manufacturing process, the position and the structure of the insulating barrier of the thin-film transistor that described etching forms are same as the prior art, as those skilled in the art's known technology, do not do detailed description at this.
Please refer to Figure 15, Figure 15 is the cross-sectional view of Figure 14 along the BB line.Form insulating barrier 204 above described first short-circuit line 202, the first metal interconnection line 201, the first electrostatic discharge (ESD) protection electrode 203, described via hole 206 exposes described first short-circuit line 202.Described via hole 205 exposes the first metal interconnection line, 201 surfaces.Described via hole 213 exposes the first electrostatic discharge (ESD) protection electrode, 203 surfaces.
With reference to Figure 16, Figure 16 is the cross-sectional view of Figure 14 along the CC line.Described via hole 205 exposes the first metal interconnection line, 201 surfaces, and described via hole 206 exposes the surface of substrate 200.
In the present embodiment, the material of described insulating barrier 204 is a silicon nitride.The formation method of described insulating barrier 204 comprises the method for chemical vapour deposition (CVD).Lithographic method to described insulating barrier 204 comprises dry etching.
With reference to Figure 14, described via hole 205 is used to make the weld pad of the first metal interconnection line 201, and described via hole 213 is used for the first electrostatic discharge (ESD) protection electrode 203 and forms with the second electrostatic discharge (ESD) protection electrode of follow-up formation and contact.
With reference to Figure 15,16; among the present invention; described insulating barrier 204 is used for the described first metal interconnection line 201 is protected on the one hand; on the other hand; grid to thin-film transistor is protected, and prevents follow-up etching technics damage metal interconnection line 201 and the grid of the thin-film transistor that links to each other with metal interconnection line 201.
In X-ray detector manufacturing process; any one first short-circuit line or can pass through first short-circuit line, the first electrostatic discharge (ESD) protection electrode grounding with the electrostatic charge on the transistorized grid that first short-circuit line links to each other has guaranteed that the electrostatic charge in the described plate amorphous silicon X-ray detector manufacturing process can discharge.
Then, with reference to Figure 17, deposition second metal level above described insulating barrier; described second metal level is carried out etching; form the second metal interconnection line 209 at pad area, form second short-circuit line 207, form the second electrostatic discharge (ESD) protection electrode 208 in the electrostatic discharge (ESD) protection district at shorting region.The described second metal interconnection line 209, the second electrostatic discharge (ESD) protection electrode 208 are connected by second short-circuit line 207, constitute second electrostatic discharging path.The described second metal interconnection line 209 covers insulating barriers, forms with the first metal interconnection line 201 of via hole 205 belows of pad area to contact.The described second electrostatic discharge (ESD) protection electrode, 208 ground connection, and cover the described first electrostatic discharge (ESD) protection electrode 203, be connected with the first electrostatic discharge (ESD) protection electrode 203 by via hole 213.Avoid the unsettled of the first electrostatic discharge (ESD) protection electrode 203 like this and accumulation static, the first electrostatic discharge (ESD) protection electrode 203 is by the second electrostatic discharge (ESD) protection electrode, 208 ground connection.As an embodiment, described first short-circuit line 207 and second short-circuit line 208 stagger mutually and arrange.
Please refer to Figure 18, Figure 18 is the cross-sectional view of Figure 17 along the BB line.Deposition second metal level above described insulating barrier 204, the described second metal interconnection line 209 covers the first metal interconnection line 201, is connected with the first metal interconnection line 201 by via hole 205.First short-circuit line 202 is carried out etching, part first short-circuit line 202 of via hole 206 belows of shorting region is removed, form via hole 212 in first short-circuit line 202, described via hole 212 replaces via holes 206, the surface of exposing substrate 200.So far first short-circuit line 202 is chopped off.
With reference to Figure 19, Figure 19 is the cross-sectional view of Figure 18 along the CC line.Described second short-circuit line 207 connects the second metal interconnection line 209 and links to each other with the second electrostatic discharge (ESD) protection electrode 208.Second electrostatic discharging path that second short-circuit line 207, the second metal interconnection line 209 and the second electrostatic discharge (ESD) protection electrode 208 constitute replaces first electrostatic discharging path that first metal interconnecting wires 201, first short-circuit line 202 and the first electrostatic discharge (ESD) protection electrode 203 constitute, and follow-up manufacturing process is carried out electrostatic discharge (ESD) protection.As an embodiment, the deposition process of described second metal level is the method for physical vapour deposition (PVD), and the material of described second metal level is a molybdenum.Described etching comprises wet etching.Described etching removes part first short-circuit line 202; the second electrostatic discharge (ESD) protection electrode 208 that forms second short-circuit line 207 and link to each other with described second short-circuit line 207; described second short-circuit line 207 replaces first short-circuit line 202; the second electrostatic discharge (ESD) protection electrode 208 replaces the first electrostatic discharge (ESD) protection electrode 203, and the device in the X-ray detector manufacture process is carried out electrostatic discharge (ESD) protection.In the manufacture process of X-ray detector, be connected with the second metal interconnection line 209 electrostatic charge of metal wire or transistorized electrode of any and first metal interconnecting wires 201 can discharge by second short-circuit line 207, the second electrostatic discharge (ESD) protection electrode 208.
The present invention disconnects first short-circuit line, 202 etchings and to finishing in the same etch chamber process of being etched in of second metal level, is about to first short-circuit line 202 and removes, and forms second short-circuit line 207 to replace first short-circuit line 202, reduces processing step.
As preferred embodiment, the step utilization of described deposition second metal level and etching second metal level be the step that forms the underlying metal of the source-drain electrode (not shown) of thin-film transistor and photodiode in the manufacturing process of array base palte of X-ray detector, do not need to increase extra processing step like this.The position and the structure of the source-drain electrode of described thin-film transistor and the underlying metal of photodiode are same as the prior art, and the known technology as those skilled in the art is not described in detail at this.The underlying metal of described photodiode links to each other with the source electrode of thin-film transistor, and described drain electrode links to each other with the second metal interconnection line.The described second metal interconnection line while is as the data wire of X-ray detector.
As another embodiment of the present invention, the described second metal level etching is carried out with the etching of first short-circuit line of the via hole of shorting region below is separated.Comprise particularly:
Second metal level is carried out etching, form the second metal interconnection line 209, form second short-circuit line 207, form the second electrostatic discharge (ESD) protection electrode 208 in the electrostatic discharge (ESD) protection district at shorting region at pad area;
First short-circuit line 201 to the via hole below carries out etching simultaneously, and is disconnected in first short-circuit line, 201 etchings, exposes glass substrate to form via hole.
So far, the thin-film transistor of X-ray detector forms, the first metal interconnection line that links to each other with described film crystal tube grid forms, and the second metal interconnection line that links to each other with described thin-film transistor drain electrode forms, and the photodiode bottom metal that links to each other with the thin-film transistor source electrode forms.The per pass manufacture craft that begins at the first metal layer all has the first electrostatic discharge (ESD) protection electrode or the second electrostatic discharge (ESD) protection electrode to carry out electrostatic discharge (ESD) protection; improved the yield of product; and when the second electrostatic discharge (ESD) protection electrode replaces the first electrostatic discharge (ESD) protection electrode; utilized existing etching technics that first short-circuit line is chopped off; the first electrostatic discharge (ESD) protection electrode and substrate are disconnected, do not increase processing step.
Then, with reference to Figure 20, described second metal level top forms the passivation layer (not shown), and described passivation layer is carried out etching, forms via hole 211 on second short-circuit line 207 of shorting region, and the size of described via hole 211 is greater than the size of via hole 212.Described via hole 211 exposes second short-circuit line, 207 surfaces.Described passivation layer as the passivation layer of the thin-film transistor of X-ray detector, is used for transistorized active layer of protective film and source-drain electrode usually, makes it avoid damaging in follow-up etching.The material of described passivation layer is a silicon nitride.The method of described etching comprises dry etching.
The step utilization of formation passivation layer of the present invention and the described passivation layer of etching be the passivation layer making step of thin-film transistor in the array base palte manufacturing process of X-ray detector, the position and the structure of the passivation layer of the thin-film transistor that described etching forms are same as the prior art, as those skilled in the art's known technology, do not do detailed description at this.
Please refer to Figure 21, Figure 21 is the cross-sectional view of Figure 20 along the BB line.Described second metal level top forms passivation layer 210, and described passivation layer 210 covers the second metal interconnection line 209 and the second electrostatic discharge (ESD) protection electrode 208.Described via hole 211 exposes the surface of substrate 200.Please refer to Figure 22, Figure 22 is the cross-sectional view of Figure 20 along the CC line.Described passivation layer 210 covers the second metal interconnection line 209 and the second electrostatic discharge (ESD) protection electrode 208.Described via hole 211 exposes the surface of second short-circuit line 207.The manufacture craft of existing X-ray detector after described passivation layer etching is finished, need be carried out the active layer of photodiode, the passivation layer of diode, the manufacture craft of common electrode layer successively.Described manufacture craft is identical with the manufacture craft of existing X-ray detector.As technology as well known to those skilled in the art, do not do detailed description at this.In the process of the passivation layer of the active layer of described formation photodiode, diode, common electrode layer, the electrostatic charge on any one the first metal interconnection line or the second metal interconnection line can be led to corresponding short-circuit line, electrostatic discharge (ESD) protection electrode grounding.
As embodiments of the invention, please refer to Figure 23, deposition the 3rd metal level (not shown) above passivation layer, described the 3rd metal level is carried out etching, described etching is incited somebody to action second short-circuit line 207 of via hole 211 belows of described shorting region as shown in figure 20 simultaneously and is removed, and forms via hole 214 and expose substrate on second short-circuit line 207.Described via hole 214 replaces via hole 211, and described via hole 214 extends to first short-circuit line, 202 inside, the surface of exposing substrate.At this moment, the second electrostatic discharge (ESD) protection electrode 208 disconnects by second short-circuit line 207 and the second metal interconnection line 209, and electrostatic discharging path removes from X-ray detector.
As preferred embodiment, deposition the 3rd metal level of the present invention and be formation and the etch step of the array base palte manufacture process of X-ray detector to the photoresist layer of thin-film transistor to the etch step utilization of described the 3rd metal level, do not increase processing step, the step of making photoresist layer usually comprises: deposition the 3rd metal level above passivation layer, described the 3rd metal level is carried out etching, above the active layer of thin-film transistor, form photoresist layer.Described etching comprises wet etching.The present invention utilizes the etch step to photoresist layer, and electrostatic discharge protective equipment is removed from X-ray detector.The structure and the position of described photoresist layer are same as the prior art, as those skilled in the art's known technology, do not do detailed description at this.
Please refer to Figure 24, Figure 24 is the cross-sectional view of Figure 23 along the BB line.Form via hole 214, described via hole 214 exposes the surface of substrate 200.With reference to Figure 25, Figure 25 is the cross-sectional view of Figure 23 along the CC line.Described via hole 214 is disconnected with the second short-circuit line (not shown) etching, the surface of exposing substrate 200.
So far; the invention provides the manufacture method of the array base palte of X-ray detector; described method has utilized the processing step in the manufacturing process of array base palte of X-ray detector that the array base palte of X-ray detector is carried out electrostatic discharge (ESD) protection, does not increase unnecessary processing step.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made possible change and modification; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (17)
1. manufacturing method of array base plate with electrostatic protection, described method comprises:
Substrate is provided, on described substrate, deposits the first metal layer;
Described the first metal layer is carried out etching, form the first metal interconnection line, first short-circuit line, the first electrostatic discharge (ESD) protection electrode, described first short-circuit line connects the first metal interconnection line and the first electrostatic discharge (ESD) protection electrode;
Above described first short-circuit line, the first metal interconnection line, the first electrostatic discharge (ESD) protection electrode, form insulating barrier;
Described insulating barrier is carried out etching, and the insulating barrier above described first short-circuit line, the first metal interconnection line, the first electrostatic discharge (ESD) protection electrode forms via hole respectively;
Deposition second metal level above described insulating barrier;
Described second metal level is carried out etching, the second metal interconnection line that formation is electrically connected with the first metal interconnection line by via hole, second short-circuit line, by the second electrostatic discharge (ESD) protection electrode of the via hole and the first electrostatic discharge (ESD) protection electrode, described second short-circuit line connects the second metal interconnection line and the second electrostatic discharge (ESD) protection electrode;
By the via hole on described first short-circuit line described first short-circuit line is carried out etching, the described first short-circuit line etching is disconnected.
2. manufacturing method of array base plate as claimed in claim 1 is characterized in that, with described first short-circuit line etching disconnection with to finishing in the same etching process of being etched in of second metal level.
3. manufacturing method of array base plate as claimed in claim 1 is characterized in that, described first short-circuit line and described second short-circuit line stagger mutually.
4. manufacturing method of array base plate as claimed in claim 1 is characterized in that, described array base palte is the X-ray detector array base palte.
5. manufacturing method of array base plate as claimed in claim 4, it is characterized in that, the described the first metal layer utilization of described formation and etching be the step that forms the film crystal tube grid in the X-ray detector array base palte manufacturing process, the described first metal interconnection line is electrically connected described film crystal tube grid.
6. manufacturing method of array base plate as claimed in claim 5 is characterized in that, described the first metal layer is that the method by physical vapour deposition (PVD) forms.
7. manufacturing method of array base plate as claimed in claim 5 is characterized in that, the etching of described the first metal layer is comprised wet etching.
8. manufacturing method of array base plate as claimed in claim 4 is characterized in that, the described insulating barrier of described formation and etching is the step that forms insulating barrier and etching insulating barrier in the X-ray detector array base palte manufacturing process.
9. manufacturing method of array base plate as claimed in claim 8 is characterized in that, described etching to described insulating barrier comprises dry etching.
10. manufacturing method of array base plate as claimed in claim 8 is characterized in that, described insulating layer material is a silicon nitride.
11. manufacturing method of array base plate as claimed in claim 4, it is characterized in that, the described second metal level utilization of described formation and etching be to form the source-drain electrode of thin-film transistor and the step of photodiode underlying metal in the X-ray detector array base palte manufacturing process.
12. the described manufacturing method of array base plate as claim 11 is characterized in that, described etching to second metal level comprises wet etching.
13. manufacturing method of array base plate as claimed in claim 1 is characterized in that, also comprises:
On the described second metal interconnection line, second short-circuit line, the second electrostatic discharge (ESD) protection electrode, form passivation layer;
Described passivation layer is carried out etching, form via hole in the passivation layer above described second short-circuit line;
Deposition three-layer metal above passivation layer;
Described three-layer metal is carried out etching;
Via hole by second short-circuit line top carries out etching to described second short-circuit line, and the described second short-circuit line etching is disconnected.
14. manufacturing method of array base plate as claimed in claim 13 is characterized in that, with described second short-circuit line etching disconnection with to finishing in the same etching process of being etched in of the 3rd metal level.
15. manufacturing method of array base plate as claimed in claim 13 is characterized in that, disconnects with described second short-circuit line etching disconnection with the described first short-circuit line etching and finishing in same etching process.
16. manufacturing method of array base plate as claimed in claim 13 is characterized in that, the described passivation layer of described formation and etching is the step that forms passivation layer and etching passivation layer in the X-ray detector array base palte manufacturing process.
17. manufacturing method of array base plate as claimed in claim 13 is characterized in that, the described three-layer metal of described formation and etching is to utilize formation and the etch step that forms photoresist layer.
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| CN201010178636.7A CN102244082B (en) | 2010-05-13 | 2010-05-13 | Manufacturing method of array substrate |
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| CN201010178636.7A CN102244082B (en) | 2010-05-13 | 2010-05-13 | Manufacturing method of array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102298239A (en) * | 2011-08-25 | 2011-12-28 | 南京中电熊猫液晶显示科技有限公司 | Metal-layer electrode on thin film transistor-liquid crystal display array substrate |
| CN103296012A (en) * | 2012-06-29 | 2013-09-11 | 上海天马微电子有限公司 | ESD protective system and X-ray flat panel detector |
| CN104280912A (en) * | 2014-10-13 | 2015-01-14 | 合肥鑫晟光电科技有限公司 | Short-circuit unit and array substrate |
| US9142954B2 (en) | 2012-06-29 | 2015-09-22 | Shanghai Tianma Micro-electronics Co., Ltd. | ESD protection system and X-ray flat panel detector |
| WO2016155258A1 (en) * | 2015-03-30 | 2016-10-06 | Boe Technology Group Co., Ltd. | Array substrates, methods for fabricating the same, and display device containing the same |
| CN104051455B (en) * | 2014-06-09 | 2017-06-23 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
| CN109309115A (en) * | 2017-10-27 | 2019-02-05 | 武汉华星光电半导体显示技术有限公司 | Array substrate and display device |
| CN109727973A (en) * | 2019-01-02 | 2019-05-07 | 合肥鑫晟光电科技有限公司 | Preparation method, the array substrate of array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102298239A (en) * | 2011-08-25 | 2011-12-28 | 南京中电熊猫液晶显示科技有限公司 | Metal-layer electrode on thin film transistor-liquid crystal display array substrate |
| CN103296012A (en) * | 2012-06-29 | 2013-09-11 | 上海天马微电子有限公司 | ESD protective system and X-ray flat panel detector |
| WO2014000394A1 (en) * | 2012-06-29 | 2014-01-03 | 上海天马微电子有限公司 | Esd protecting system and x ray flat plate detector |
| US9142954B2 (en) | 2012-06-29 | 2015-09-22 | Shanghai Tianma Micro-electronics Co., Ltd. | ESD protection system and X-ray flat panel detector |
| CN103296012B (en) * | 2012-06-29 | 2016-02-10 | 上海天马微电子有限公司 | ESD protective system and X-ray flat panel detector |
| CN104051455B (en) * | 2014-06-09 | 2017-06-23 | 京东方科技集团股份有限公司 | Array base palte and preparation method thereof, display device |
| CN104280912A (en) * | 2014-10-13 | 2015-01-14 | 合肥鑫晟光电科技有限公司 | Short-circuit unit and array substrate |
| US9576864B2 (en) | 2014-10-13 | 2017-02-21 | Boe Technology Group Co., Ltd. | Short-circuit unit and array substrate |
| WO2016058348A1 (en) * | 2014-10-13 | 2016-04-21 | 京东方科技集团股份有限公司 | Short-circuit unit and array substrate |
| WO2016155258A1 (en) * | 2015-03-30 | 2016-10-06 | Boe Technology Group Co., Ltd. | Array substrates, methods for fabricating the same, and display device containing the same |
| US9806103B2 (en) | 2015-03-30 | 2017-10-31 | Boe Technology Group Co., Ltd. | Array substrates, methods for fabricating the same, and display device containing the same |
| CN109309115A (en) * | 2017-10-27 | 2019-02-05 | 武汉华星光电半导体显示技术有限公司 | Array substrate and display device |
| US10854702B2 (en) | 2017-10-27 | 2020-12-01 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate and display device |
| CN109727973A (en) * | 2019-01-02 | 2019-05-07 | 合肥鑫晟光电科技有限公司 | Preparation method, the array substrate of array substrate |
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| CN102244082B (en) | 2014-12-17 |
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