CN102254913A - Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device structure and preparation method thereof - Google Patents
Radio frequency laterally diffused metal oxide semiconductor (LDMOS) device structure and preparation method thereof Download PDFInfo
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- CN102254913A CN102254913A CN2010101800557A CN201010180055A CN102254913A CN 102254913 A CN102254913 A CN 102254913A CN 2010101800557 A CN2010101800557 A CN 2010101800557A CN 201010180055 A CN201010180055 A CN 201010180055A CN 102254913 A CN102254913 A CN 102254913A
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Abstract
The invention discloses a radio frequency laterally diffused metal oxide semiconductor (LDMOS) device structure. An isolation structure between LDMOS devices consists of a plurality of deep grooves filled with media and a field oxide layer positioned on the plurality of deep grooves, wherein each deep groove has a depth of 0.3 to 10 microns. By the device structure, after the field oxide layer is formed, height difference between the field oxide layer and a substrate is small, and the preparation yield is high. The invention also discloses a method for preparing a radio frequency LDMOS device.
Description
Technical field
The present invention relates to a kind of radio frequency LDMOS device architecture.The invention still further relates to a kind of radio frequency LDMOS preparation of devices method.
Background technology
LDMOS (diffused metal-oxide semiconductor) is one of device commonly used in the present RF radio frequency technology.Can form the radio frequency LDMOS device of low cost, high-performance and high integration based on the LDMOS structure, be used in the HF communication field and other are for the very high application of rate request.A kind of common radio frequency LDMOS device architecture as shown in Figure 1,1 is substrate among the figure, 2 is epitaxial loayer, 3 is articulamentum, 4 is field oxide, 5 is the source region, 6 is the drain region, 7 is gate oxide, 8 is grid.In order to improve the response frequency of device, the parasitic capacitance that how to reduce insulation layer is a major technology difficult point in the preparation.Common way is the oxide thickness that increases considerably an isolated area.Usually in the RFLDMOS device preparation of typical application more than 2.4GHZ, oxide thickness is usually greater than 1um.Simultaneously because the field oxygen thickness that requires is too thick, can't realize with the STI isolation technology, therefore often use local field oxidation isolation technology (LOCOS technology) to form, and after oxidation isolation technology on the scene finishes, the height of substrate plane rises and falls very big, subsequent technique has been caused severely restricts, caused to realize undersized device production.In the RF LDMOS device preparation technology that is applied to 2.4GHZ for 0.5um, the thickness of field oxide is usually greater than 1um (being typically 2-3um), this moment, field oxide was than more than the high 0.5um of substrate, this moment is for the grid of 0.5um, its lithographic process window is 0.8-1um, is subjected to substrate and just rises and falls very greatly, and the control ability of characteristic size CD is very poor, rate of finished products is very low, causes the RFLDMOS production cost of the type very high.And, realize that the grid below the 0.5um almost cannot based on this kind structure.Because an oxygen uses thermal oxidation to form usually, therefore can't form the air gap with further reduction electric capacity, so device performance also is subjected to certain limitation simultaneously in isolated area.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of radio frequency LDMOS device architecture, and it has lower electric capacity.
For solving the problems of the technologies described above, radio frequency LDMOS device architecture of the present invention, wherein the isolation structure between the LDMOS device is for being made up of a plurality of field oxides that are filled with the deep trouth of low capacitor dielectric and are positioned on a plurality of deep trouths, the degree of depth of deep trouth is 0.3～10 micron, and medium is the low medium of permittivity ratio silicon in the deep trouth.
The present invention also provides a kind of radio frequency LDMOS preparation of devices method, it is: adopt between the LDMOS device a plurality ofly to be filled with the deep trouth of medium and to be positioned at field oxide on a plurality of deep trouths as device isolation, the degree of depth of deep trouth is 0.3～10 micron, and medium is the low medium of permittivity ratio silicon in the deep trouth.
Radio frequency LDMOS device architecture of the present invention adopts a plurality of deep isolation trench filled medias to add field oxide on it and realizes isolation between the RFLDMOS device can producing very thick isolation structure.Can produce technology in conjunction with common air gap and in deep trouth, fill the air gap, can realize the isolation structure of low parasitic capacitance, by deep trench isolation most oxide layers are transferred to below the substrate simultaneously, make the part that is higher than substrate lower than traditional handicraft, reduce follow-up technology difficulty, realize undersized gated device production.
Description of drawings
The present invention is further detailed explanation below in conjunction with accompanying drawing and embodiment:
Fig. 1 is existing radio frequency LDMOS device architecture schematic diagram;
Fig. 2 is a radio frequency LDMOS structure preparation method's of the present invention schematic flow sheet;
Fig. 3 is the structural representation behind the formation articulamentum among the preparation method of the present invention;
Fig. 4 defines structural representation behind the deep trouth for photoetching process among the preparation method of the present invention;
Fig. 5 is the structural representation behind the etching formation deep trouth among the preparation method of the present invention;
Fig. 6 is the structural representation after deep trouth is filled among the preparation method of the present invention;
Fig. 7 defines structural representation behind the field oxide region for photoetching process among the preparation method of the present invention;
Fig. 8 is for removing structural representation behind the silicon nitride that is positioned at field oxide region and the silica among the preparation method of the present invention;
Fig. 9 is the structural representation behind the oxidation formation field oxide among the preparation method of the present invention;
Figure 10 is positioned at the silicon nitride of device area and the structural representation behind the silica for removing among the preparation method of the present invention;
Figure 11 is a radio frequency LDMOS device architecture schematic diagram of the present invention.
Embodiment
Radio frequency LDMOS device architecture of the present invention is made up of a plurality of field oxides 9 that are filled with the deep trouth of low capacitor dielectric and are positioned on a plurality of deep trouths at the isolation structure between the LDMOS device (seeing Figure 11), and the degree of depth of deep trouth is 0.3～10 micron.In said structure, the horizontal direction of deep trouth is 0.3～0.7 in the duty ratio of isolated area.
Radio frequency LDMOS device can be divided into isolated area and active area in preparation process, isolated area is between individual devices, as two devices are isolated; And active area is the zone at source region, drain region and the place, grid region of device.Radio frequency LDMOS device of the present invention, promptly the deep trouth that is designed to a plurality of filled medias at the isolation structure of area of isolation adds the field oxide on it, replaces original merely with the way of thick field oxide as isolation structure.
Radio frequency LDMOS preparation of devices method of the present invention is included in the deep trouth that area of isolation prepares a plurality of filled medias, and prepares field oxide on deep trouth, and wherein the degree of depth of deep trouth can be 0.3～10 micron.
The concrete preparation flow of radio frequency LDMOS device of the present invention comprises the steps (see figure 2):
(1) on substrate 1, forms epitaxial loayer 2 (this layer is the separator of device and substrate 1), on epitaxial loayer 2, form the articulamentum 3 (seeing shown in Figure 3) that device is connected to substrate by injection technology then by epitaxy technique.The technology of the formation process using routine of epitaxial loayer and articulamentum.In radio frequency LDMOS device, draw at the general back side of adopting, middle epitaxial loayer is as the high pressure Withstand voltage layer, therefore needing an articulamentum to pass Withstand voltage layer draws layer with the back side and is connected, articulamentum uses injection technology to produce usually, but because Withstand voltage layer is thicker usually, needs very strong thermal process to spread, and Withstand voltage layer is very thick, and needing repeatedly grows up injects generation.
(2) silicon oxide deposition 11 and silicon nitride 12 in regular turn on epitaxial loayer afterwards are as the hard mask layer of etching.
(3) then utilize photoetching process to define a plurality of deep slot pattern (see figure 4)s on silicon nitride, wherein 13 is photoresist, the isolated area of deep slot pattern between device.
(4) the hard mask (silicon nitride and silica) and the part epitaxial loayer that expose of etching forms a plurality of deep trouth (see figure 5)s in epitaxial loayer, then remove remaining photoresist, and the degree of depth of a plurality of deep trouths can be 0.3～10 micron.The width of deep trouth can be 0.5～5 micron, and depth-to-width ratio numerical value can be between 1～4.In the horizontal direction of isolated area, the duty ratio of deep trouth is 0.3～0.7
(5) afterwards to deep trouth filled media 10 (as silica).Filling can be passed through CVD technology etc., and filled media can be doped polycrystalline silicon or silica (can mix, also can be unadulterated).In order to reduce the parasitic capacitance of isolation structure, also can in deep trouth, fill the air gap, interstitial gap can form (see figure 6) by insufficient filled media technology in deep trouth, remove the medium on the substrate plane after filling, and residual silicon nitride and silica.
(6) on substrate 1 again silicon oxide deposition 11 and silicon nitride 12 then define the field oxide region (see figure 7) as the barrier layer of field oxide by photoetching process, the silica and the silicon nitride that then will be positioned at field oxide region are removed (see figure 8).
(7) carry out an oxidation technology, make the substrate oxidation that exposes to the open air out form field oxide 19, this field oxide is positioned on a plurality of deep trouths, has constituted isolation structure (see figure 9) of the present invention, removes silicon nitride and silica (see figure 10) afterwards.Then carry out the technology of follow-up routine, form source region 5, drain region 6, gate oxide 7 and grid 8, form device architecture as shown in figure 11.
Claims (8)
1. radio frequency LDMOS device architecture, it is characterized in that: the isolation structure of the isolated area between the described LDMOS device is made up of a plurality of field oxides that are filled with the deep trouth of medium and are positioned on described a plurality of deep trouth, and the medium of filling in the described deep trouth is the low medium of permittivity ratio silicon.
2. according to the described device architecture of claim 1, it is characterized in that: the degree of depth of described deep trouth is 0.3～10 micron, is 0.3～0.7 in the duty ratio of deep trouth horizontal direction described in the described isolated area.
3. according to claim 1 or 2 described device architectures, it is characterized in that: the medium in the described deep trouth is doped polycrystalline silicon, silica or air gap.
4. radio frequency LDMOS preparation of devices method, it is characterized in that: adopt between the described LDMOS device a plurality ofly to be filled with the deep trouth of medium and to be positioned at field oxide on described a plurality of deep trouth as device isolation, the degree of depth of described deep trouth is 0.3～10 micron, and the medium of described filling deep trouth is the low medium of permittivity ratio silicon.
5. according to the described preparation method of claim 4, it is characterized in that: the medium in the described deep trouth is doped polycrystalline silicon, silica or air gap.
6. according to claim 4 or 5 described preparation methods, it is characterized in that, comprise the steps:
1) on substrate, forms epitaxial loayer and articulamentum;
2) on described epitaxial loayer deposit in regular turn as the silica and the silicon nitride of hard mask layer;
3) on described silicon nitride, define a plurality of deep slot patterns with photoetching process;
4) described hard mask layer of etching and part epitaxial loayer form a plurality of deep trouths, then remove remaining photoresist, and the degree of depth of described deep trouth is 0.3～10 micron;
5) the deposit medium to be to fill described a plurality of deep trouth, wherein adopts the depositing technics that forms the air gap in described deep trouth to fill, and removes the hard mask of deposit in described low capacitor dielectric on the substrate plane and the step 2 afterwards;
6) silicon oxide deposition and silicon nitride in regular turn once more on substrate;
7) define field oxide region with photoetching process, and will be positioned at the silica and the silicon nitride removal of described field oxide region;
8) carry out oxidation technology and make the substrate oxidation that is positioned at described field oxide region form field oxide, described field oxide is positioned on described a plurality of deep trouth, removes described silicon nitride and silica afterwards, carries out follow-up common process.
7. according to the described preparation method of claim 6, it is characterized in that: the width of the deep trouth in the described step 4 is 0.5～5 micron, the depth-to-width ratio numerical value of described deep trouth is between 1～4, and in described isolated area, the horizontal direction of described deep trouth is 0.3～0.7 in the duty ratio of isolated area.
8. according to the described preparation method of claim 6, it is characterized in that: the air gap in the described deep trouth generates by filling inadequate fill process.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104183499A (en) * | 2014-08-13 | 2014-12-03 | 武汉新芯集成电路制造有限公司 | Semiconductor device and preparation method thereof |
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