CN102262091A - Detection device and detection method for dynamics process of structure change of micro region of material - Google Patents
Detection device and detection method for dynamics process of structure change of micro region of material Download PDFInfo
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- CN102262091A CN102262091A CN2011100905170A CN201110090517A CN102262091A CN 102262091 A CN102262091 A CN 102262091A CN 2011100905170 A CN2011100905170 A CN 2011100905170A CN 201110090517 A CN201110090517 A CN 201110090517A CN 102262091 A CN102262091 A CN 102262091A
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Abstract
The invention discloses a detection device and a detection method for dynamics process of structure change of a micro region of a material. The device comprises two paths of laser light, one path of laser light reacts with the material, which results in that the structure of the micro region of the material changes, and the second path of laser light detects the dynamics process of the structure change. In the device and the method, a sample is automatically adjusted to a focal point of the first path of laser light by a CCD (charge coupled device) imaging method and a piezoelectric ceramic, and an objective lens with high numerical aperture is used so as to obtain the structure change of the micro region; the two paths of laser light are coaxial and vertically incident on the surface of the sample, light spots formed on the surface of the sample by the two paths of laser light are simultaneously observed through a CCD, and consequently, and the light spots of the two paths of laser light can be accurately superposed, which facilitates the detection on the dynamics process of the structure change of smaller regions; the utilization rate of the laser light is improved through a polarization beam splitting prism and a quarter wavelength plate, the two coaxial paths of laser light are completely separated by a dispersing prism and a total reflection principle, influence of non-detection light is removed, and detection precision is improved.
Description
Technical field
The present invention relates to the optical detection field, particularly a kind of pick-up unit and detection method of material domain structure change kinetics process.
Background technology
Along with the development of laser technology, the laser-induced material structure changes and uses more and more widely, and as integrated circuit, solar cell, optical device etc., the dynamic process that material structure changes is also studied more and more.In the material structure change procedure, dynamic process and thermodynamic process complement each other, thermodynamic process is meant extraneous condition of its recurring structure being changed for one of material, dynamic process is meant the dynamic process that material structure changes, the research of this process helps that not only material character is had further understanding, as material crystalline state and amorphous conversion, can also be used for measurement, as the measurement of membraneous material thickness to some parameter of material.
A kind of measurement model commonly used has two-way laser at present, one tunnel laser vertical acts on sample surfaces, another road laser oblique incidence, reach with first via laser on sample surfaces overlaps, the second road laser is received by detector after the sample reflection, when first via laser changed material structure, the light intensity of the second road laser changed, and the signal that detects changes.But the method is unfavorable for utilizing CCD to observe the position of two-way laser, in order to make the second road laser can detect structural change, the reach of first via laser needs bigger, the focal position that this often will make sample surfaces depart from first via laser, and this just needs to improve laser power; Moreover first via laser action needs through having the lens of focussing force before on the material surface, in order not influence the second road laser propagation, this focal length of lens can not be too short, more can not use the high object lens of numerical aperture, this needs further to improve laser power, and needs bigger space.
In order to address the above problem, the present invention proposes first via laser and the second road laser coaxial impinges perpendicularly on the scheme of sample surfaces, and utilize CCD can observe two-way laser simultaneously, can make this two-way laser inregister, sample does not need out of focus; Among the present invention, short condenser lens or the higher object lens of numerical aperture of available focal length focus on first via laser, compact conformation, the utilization factor of raising laser.
Summary of the invention
The object of the present invention is to provide a kind of pick-up unit and method of material domain structure change kinetics process, but this device test material is under laser action, the process that structure changes also can be observed material after laser action, the result that structure changes.
Technical solution of the present invention is as follows:
A kind of material domain structure change kinetics process pick-up unit, characteristics are that its formation comprises:
Output wavelength is λ
1First laser instrument of laser, along being the first spectrum spectroscope, beam expanding lens, the second spectrum spectroscope successively on the laser main beam of this first laser instrument output, the described first spectrum spectroscope and the second spectrum spectroscope and main beam placement at 45; Main beam reflects through the second spectrum spectroscope, is object lens and testing sample successively in this reflected light direction; Described object lens are fixed on the piezoelectric ceramics; Described sample places can be on the two-dimension moving platform of X-axis and Y direction motion;
Having output wavelength is λ
2The laser of second laser instrument output of laser incide the described first spectrum spectroscope through polarization splitting prism, quarter-wave plate, after this first spectrum spectroscope reflection, advance along described main beam, this laser returns along former road after described sample reflection, reflection through described polarization splitting prism, along this reflected light direction, be dispersing prism, the 3rd spectrum spectroscope, aperture, condenser lens and detector successively; Described the 3rd spectrum spectroscope and wavelength are λ
2The working direction placement at 45 of laser;
White light source, the white light of this white light source output is after semi-transparent semi-reflecting spectroscope reflection, pass through the described second spectrum spectroscope, object lens, sample successively, this white light returns along former road after the sample reflection, reaches the CCD camera after described semi-transparent semi-reflecting spectroscope transmission;
The input end of described first laser instrument is connected with first output terminal of signal generator; The output terminal of described signal generator second output terminal and described detector is connected with oscillographic input end; The control end of described second laser instrument, signal generator, piezoelectric ceramics, two dimensional motion translation stage all is connected with the output terminal of computing machine, and described CCD camera links to each other with described input end and computer with oscillographic output terminal.
The wavelength that described second laser instrument sends is λ
2Laser and the wavelength that sends of described first laser instrument be λ
1The hot spot that forms on the surface of described sample of laser overlap.
The wavelength that described second laser instrument sends is λ
2The polarization direction of laser consistent with the transmitted light polarization direction of described polarization splitting prism.
The angle of described dispersing prism is placed and satisfied: the wavelength that is sent by described first laser instrument is λ
1Laser total reflection takes place on the exit facet of this dispersing prism, the wavelength that is sent by described second laser instrument is λ
2Laser on the exit facet of this dispersing prism, see through;
The described first spectrum spectroscope is to wavelength X
1The transmissivity of laser is more than 90%, to wavelength X
2The reflectivity of laser is more than 90%.
The described second spectrum spectroscope is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The reflectivity of laser more than 90%, to the transmission of visible light of other wavelength in the white light source more than 50%.
Described the 3rd spectrum spectroscope is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The transmissivity of laser more than 90%.
Described CCD camera not only can obtain the described sample surfaces feature that described white light source illuminates, and can to obtain by the wavelength that described first laser instrument sends be λ
1Laser and the wavelength that sends of second laser instrument be λ
2The hot spot feature that forms at described sample surfaces of laser.
The method of utilizing described material domain structure change kinetics process pick-up unit to measure comprises the following steps:
1. the oscilloscope signal receiving mode is set:
Described oscillographic signal receiving modes is arranged to rising edge trigger action pattern, and the signal that described signal generator is sent is as the triggering source, and when signal generator sends a rising edge pulse signal, it is λ that described first laser instrument sends wavelength
1Laser, oscillograph recording this moment is by the data of described detector and signal generator input signal;
2. utilize the CCD camera imaging, the searching wavelength is λ
1The focal position of laser:
The described signal generator of described computer control sends the low level direct current signal, and this signal outputs to described first laser instrument, and it is λ that this laser instrument sends the lower wavelength of power
1Laser; Simultaneous computer is controlled described second laser instrument and is not sent laser; Described sample is placed on the described two-dimension moving platform, adjusts described samples vertical, regulate described two-dimension moving platform, the tested point of sample is positioned on the focus of described object lens front-right in the primary optical axis direction;
The input voltage of the described piezoelectric ceramics of computer control makes piezoelectric ceramics be parallel to primary optical axis direction generation micro-displacement, laser λ
1Size and brightness at the hot spot of sample surfaces formation also changes through object lens; This hot spot is imaged on the described CCD camera, the half-tone information of the hot spot on the described CCD camera of computer acquisition, and when the gray-scale value maximum of hot spot, then the tested point of described sample surfaces and wavelength are λ
1Laser overlap through the focus that object lens form;
3. measure the dynamic process that the material domain structure changes:
The input voltage of described second laser instrument of described computer installation, making second laser instrument send wavelength is λ
2Laser, this input voltage is a DC voltage, the wavelength that this magnitude of voltage determines second laser instrument to send is λ
2The power of laser; It is λ that second laser instrument sends wavelength
2The power of laser lower, guarantee described sample surfaces not recurring structure change; This wavelength is λ
2Laser after sample reflection, forming the wavelength that has the dynamic information that the sample domain structure changes is λ
2Laser, received by described detector;
Regulate the unit length of described oscillographic transverse axis and the unit length of the longitudinal axis, make its in time with amplitude on the waveform of the required measurement that can show; Oscillograph is in waits for the triggering state, regulate triggering level, make its high level less than required measured waveform;
According to measurement requirement, it is λ that amplitude, the pulse width of the described signal generator output signal of computer installation, the amplitude of this signal determine described first laser instrument to send wavelength
1The power of laser, the pulse width decision wavelength of this signal is λ
1Laser and the action time of described sample; The computer control signal generator sends pulse, triggers described first laser instrument and oscillograph simultaneously, and it is λ that first laser instrument sends wavelength
1Laser action on sample, the wavelength that has the dynamic information that the sample domain structure changes that reflects through described sample that the signal generator that described oscillograph writes down this moment simultaneously sends that pulse waveform and described detector survey is λ
2The waveform of laser; After signal generator sends a pulse signal, the described signal generator shutdown signal of computer control; The wavelength that has the dynamic information that the sample domain structure changes that reflects through described sample that pulse waveform that described oscillograph sends the tracer signal generator and described detector are surveyed is λ
2The waveform of laser send described Computer Storage;
4. the direction of motion of computer installation two-dimension moving platform and move distance, mobile example to a new position to be measured utilizes the new position to be measured of CCD camera looks sample surfaces whether damage is arranged, and when not damaging, then enters step 6.;
5. when material surface has damage, then continue the position of control two-dimension translational platform mobile example, utilize the new position to be measured of CCD camera looks sample surfaces whether damage is arranged,, enter step 6. up to not damage;
6. repeating step 2. and 3., the dynamic process that the measuring samples domain structure changes;
7. after measurement was finished, the domain structure change curve of computer drawing sample can draw the dynamic process that the material domain structure changes.
Technique effect of the present invention:
The present invention adopts laser λ
1With laser λ
2The hot spot that the coaxial object lens that incide, two-way laser form at sample surfaces behind object lens overlaps, and such design makes detecting location more accurate, structural change that can the detecting material microcell; And can observe with CCD simultaneously.
Utilize the CCD camera to gather laser λ among the present invention
1Through the facula information that object lens form at sample surfaces, in conjunction with the electrostrictive effect of piezoelectric ceramics, regulate the relative distance between sample and the object lens, until hot spot gray scale maximum, promptly sample is positioned at laser λ
1On the focus behind the object lens.The repeatability of this method is high, and personal error is few.
Utilize dispersing prism the laser λ that on optical axis, overlaps among the present invention
1With laser λ
2Separately.Laser λ
1With laser λ
2Has different deflection angles after entering dispersing prism, two-way laser propagation direction difference; At the exit facet of dispersing prism, laser λ
1With laser λ
2Have the different angles of total reflection, adjust the dispersing prism angle and can make laser λ
1On this exit facet total reflection takes place, laser λ
2Through this dispersing prism transmission.Compare with general optical filtering, this method can be eliminated laser λ fully
1To the influence of result of detection, improve the accuracy of measuring.
Utilize the polarization characteristic of laser among the present invention, improve the utilization factor of laser.Incident laser λ
2The polarization direction be adjusted to consistently with the direction of shaking thoroughly of polarization splitting prism, it is the highest that transmission power reaches, reflective power is reduced to minimum; The laser λ of Chuan Boing forward
2With the laser λ that reflects
2Twice through quarter-wave plate, laser λ
2Change of polarization to vertical with initial polarization direction, promptly vertical with the direction of shaking thoroughly of polarization splitting prism, this moment, reflective power was the highest, transmission power is reduced to minimum.Compare with general semi-transparent semi-reflecting lens, this method can reduce the loss of laser, satisfies detector in light intensity and surveys under the prerequisite that requires, and can reduce the power of laser, in order to avoid material structure is impacted.
First laser instrument that the present invention adopts sends laser λ
1Power and pulse width can modulate simultaneously by signal generator, amplitude and pulse width that signal generator sends signal determine laser λ respectively
1Output power and pulse width.Different laser powers can make just that dissimilar and structural change in various degree takes place material, as type such as crystallization, ablation and in various degree variation separately, but by the dynamic process under the different variations of this research material structure; The asynchronism(-nization) that different laser pulse widths changes the material recurring structure, but the time that changes by this research material recurring structure.
Description of drawings
Fig. 1 is the light channel structure figure of the material domain structure change kinetics process pick-up unit realized of the present invention.
Fig. 2 is the measurement result that the present invention realizes material domain structure change kinetics process under the different laser powers, and Fig. 2 (a) and (b) are respectively the measurement results when laser power is 4.5mw and 7mw.
Fig. 3 is the measurement result that the present invention realizes material domain structure change kinetics process under the different laser pulse widths, and Fig. 3 (a) and (b) are respectively the measurement results when laser pulse width is 2.5us and 5us.
Embodiment
The present invention will be further described below in conjunction with embodiment and accompanying drawing.
Fig. 1 is the light channel structure figure of the embodiment of material domain structure change kinetics process pick-up unit that realizes of the present invention.As shown in Figure 1, material domain structure change kinetics process pick-up unit comprises 3 parts: first is the part that laser-induced material microcell changes, second portion is the part of test material domain structure change kinetics process, and third part is that CCD observes part.
The part that laser-induced material microcell changes: on its primary optical axis, comprise the output laser wavelength lambda successively
1First laser instrument 1, the first spectrum spectroscope 2, beam expanding lens 3, the second spectrum spectroscope 4, after 90 ° of the reflections of this spectrum spectroscope, primary optical axis turnover, be object lens 6 and sample 7 successively; The described first spectrum spectroscope 2 and the second spectrum spectroscope 4 and primary optical axis placement at 45; Described object lens 6 are fixed on the piezoelectric ceramics 5; Described sample 7 places can be on the two-dimension moving platform 8 of X-axis and Y direction motion.
The part of test material domain structure change kinetics process: comprise the output laser wavelength lambda successively
2Second laser instrument 9, polarization splitting prism 10, quarter-wave plate 11, the described first spectrum spectroscope 2, after this spectrum spectroscope reflection, advance along primary optical axis, through described beam expanding lens 3, the second spectrum spectroscope 4, object lens 6, sample 7, this laser returns along former road after described sample 7 reflections, along the reflected light outbound course output of described polarization splitting prism 10, pass through dispersing prism 12, the 3rd spectrum spectroscope 13, aperture 14, condenser lens 15 and detector 16 successively; Described the 3rd spectrum spectroscope 13 and laser λ
2Working direction placement at 45.The laser λ that described second laser instrument 9 sends
2The laser λ that sends with first laser instrument 1
1On primary optical axis, overlap, and the hot spot that forms on described sample 7 surfaces overlaps; The laser λ that described second laser instrument 9 sends
2The polarization direction be adjusted to consistent with the direction of shaking thoroughly of described polarization splitting prism 10, this moment transmission power reach the highest, laser λ
2Twice its change of polarization is to vertical with the direction of shaking thoroughly of polarization splitting prism 10 through behind described 1/4ths wave plates, and this moment, reflective power was the highest; The angle of described dispersing prism 12 is placed and is satisfied: the laser λ that is sent by described first laser instrument 1
1On the exit facet of this dispersing prism 12 total reflection takes place, the laser λ that is sent by described second laser instrument 9
2Total reflection does not take place on this surface.
CCD observes part: comprise white light source 17, semi-transparent semi-reflecting spectroscope 18 successively, reflection outbound course along this semi-transparent semi-reflecting spectroscope 18 passes through the described second spectrum spectroscope 4, object lens 6, sample 7 successively, white light returns along former road after sample 7 reflections, transmission direction output along described semi-transparent semi-reflecting spectroscope 18 arrives CCD camera 19.Described CCD camera 19 not only can be observed described sample 7 surface characteristics that described white light source 17 illuminates, and can observe the laser λ that is sent by described first laser instrument 1
1The laser λ that sends with second laser instrument 9
2Hot spot feature in described sample surfaces formation.
Described first laser instrument 1 is connected with signal generator 20; Described signal generator 20, detector 16 are connected with oscillograph 21; Described second laser instrument 9, CCD camera 19, signal generator 20, oscillograph 21, piezoelectric ceramics 5, two dimensional motion translation stage 8 are connected with computing machine 22.Described signal generator 20 output signals are divided into two-way, output to described first laser instrument 1 and oscillograph 21 respectively; Described oscillograph 21 receives the two-way input signal, respectively from described signal generator 20 and detector 16; Described first laser instrument 1 sends the power parameter and the laser pulse parameters of laser, the signal deciding of being sent by described signal generator 20; The signal parameter that described signal generator 20 sends and second laser instrument 9 send the power parameter of laser, by described computing machine 22 controls.
2 pairs of wavelength X of the described first spectrum spectroscope
1Laser-transmitting rate more than 90%, and to wavelength X
2Laser reflectivity more than 90%; 4 pairs of wavelength X of the described second spectrum spectroscope
1Laser reflectivity more than 90%, to wavelength X
2Laser reflectivity more than 90%, to the transmission of visible light of other wavelength in the white light source 17 more than 50%; 13 pairs of wavelength X of described the 3rd spectrum spectroscope
1Laser reflectivity more than 90%, and to wavelength X
2Laser-transmitting rate more than 90%.
In the present embodiment, it is the laser instrument of 405nm that first laser instrument 1 is selected optical maser wavelength for use, and it is the laser instrument of 660nm that second laser instrument 9 is selected wavelength for use.
The concrete operations step of embodiment is as follows:
1. the oscilloscope signal receiving mode is set:
The signal receiving modes of oscillograph 21 is arranged to rising edge trigger action pattern, the signal that signal generator 20 is sent is as the triggering source, when signal generator 20 sends a rising edge pulse signal, first laser instrument 1 sends the laser that wavelength is 405nm, the data of oscillograph 21 record two-way input signals this moment.
2. utilize the CCD imaging to seek laser λ
1The focal position:
Computing machine 22 control-signals generator 20 are sent the low level direct current signal, and this signal outputs to first laser instrument 1, and it is the continuous laser of 405nm that this laser instrument sends the lower wavelength of power, and this laser can not cause the structure of sample 7 to change; Computing machine 22 controls second laser instrument 9 does not send laser; Sample 7 is placed on the two-dimension moving platform 8, adjusts sample 7, be located at object lens 6 front-rights, adjust sample 7 and be parallel to the axial position of key light, be located at 405nm laser near the focal plane behind the object lens 6 perpendicular to the axial position of key light;
The input voltage of computing machine 22 control piezoelectric ceramics 5, make piezoelectric ceramics 5 be parallel to primary optical axis direction generation micro-displacement, because object lens 6 are fixed on the piezoelectric ceramics 5, so the distance between object lens 6 and the sample 7 produces subtle change, make the size and the brightness of the hot spots that 405nm laser process object lens 6 form on sample 7 surfaces change; 405nm laser is imaged on the CCD camera 19 at sample 7 surperficial formed hot spots, the hot spot half-tone information that computing machine 22 is gathered on the CCD camera 19, when 405nm laser focuses on sample 7 surfaces, the gray-scale value maximum of hot spot, computing machine 22 these maximum gradation value of record; Computing machine 22 is adjusted the input voltage of piezoelectric ceramics 5, makes the hot spot gray-scale value reach maximum, and this moment, 405nm laser focused on sample 7 surfaces.
3. measure the dynamic process that the material domain structure changes:
By computing machine 22 input voltage of second laser instrument 9 is set, makes it send the laser that wavelength is 660nm, this input voltage is a DC voltage, and output laser is continuous laser, and magnitude of voltage determines second laser instrument 9 to send the performance number of laser; It is lower that second laser instrument 9 sends laser power, avoids making the structure of sample 7 to change; 660nm laser returns along former road after sample 7 reflections, is detected device 16 at last and receives;
The transverse axis of regulating oscillograph 21 is the unit length of time shaft and the unit length of the longitudinal axis and range value, make its in time with amplitude on the waveform of the required measurement that can show; Oscillograph 21 is in waits for the triggering state, regulate triggering level, make its high level less than required measured waveform;
According to measurement requirement, amplitude and pulse width by computing machine 22 signalization generators 20 output signals, the amplitude of this signal determines the power of the 405nm laser that first laser instrument 1 sends, the pulse width decision 405nm laser of this signal and the action time of sample 7; Computing machine 22 control-signals generator 20 are sent pulse, and at this moment, first laser instrument 1 sends the 405nm laser action on sample 7, and simultaneously, oscillograph 21 is triggered, record two-way waveform at this moment; After signal generator 20 sends a pulse signal, computing machine 22 its shutdown signals of control; Store measured data.
4. the direction of motion and the move distance of two-dimension moving platform 8 are set by computing machine 22, mobile example 7 to one repositions, whether sample surfaces has damage to utilize CCD camera 19 to observe herein, if not damage, then repeating step is 2. 3. herein, change the pulse width and the power of 405nm laser, measure the dynamic process that the material domain structure microcell under another condition changes; If material surface has damage, then continue control two-dimension translational platform 8 mobile examples 7 positions, up to sample just face do not have injury region, 2. 3. repeating step measures the dynamic process that the material domain structure under another condition changes.
5. Fig. 2 is Sb for the measurement result of an embodiment of material domain structure change kinetics process under the present invention the measures different laser powers at the present embodiment sample
2Te
3The numerical aperture of object lens 6 is 0.9, the signal that signal generator 20 outputs to first laser instrument 1 is that pulse width all is the individual pulse signal of 5ms, in Fig. 2 (a), two kinds of situations of Fig. 2 (b), signal generator 20 output signal high level are respectively 4.0v, 4.5v, corresponding laser power is respectively 4.5mw, 7mw, and low level all is 0v, shown in curve V1; Laser action causes the material domain structure to change, and its dynamic process is shown in curve V2.The middle material structure of Fig. 2 (a) changes more not obvious, is observed by CCD, and laser action place material surface is a white point, and material generation crystallization is ablated; The middle material structure of Fig. 2 (b) changes more obvious, is observed by CCD, and laser action place material surface is big stain, and material is ablated.
Fig. 3 is Sb for the measurement result of an embodiment of material domain structure change kinetics process under the present invention the measures different laser pulse widths at the present embodiment sample
2Te
3The numerical aperture of object lens 6 is 0.9, the signal that signal generator 20 outputs to first laser instrument 1 is that high level all is the individual pulse signal of 4.9v, corresponding laser power is 10mw, low level all is 0v, in Fig. 3 (a), two kinds of situations of Fig. 3 (b), signal generator 20 output signal pulses width are respectively 2.5us, 5.0us, shown in curve V1; Laser action causes the material domain structure to change, and its dynamic process is shown in curve V2.Can be drawn by curve, the material domain structure is not to change when being subjected to laser radiation, but behind about 200ns, structure changes; And after the material domain structure changed a lot, even laser continues irradiation, domain structure no longer changed, and shown in Fig. 3 (b), laser continues irradiation, and material structure no longer changes.
Foregoing embodiment is exemplary, should not limit protection scope of the present invention with this.
Claims (9)
1. material domain structure change kinetics process pick-up unit is characterised in that its formation comprises:
The output laser wavelength lambda
1First laser instrument (1), along being the first spectrum spectroscope (2), beam expanding lens (3), the second spectrum spectroscope (4) successively on the laser main beam of this first laser instrument (1) output, the described first spectrum spectroscope (2) and the second spectrum spectroscope (4) and main beam placement at 45; Main beam reflects through the second spectrum spectroscope (4), is object lens (6) and testing sample (7) successively in this reflected light direction; Described object lens (6) are fixed on the piezoelectric ceramics (5); Described sample (7) places can be on the two-dimension moving platform (8) of X-axis and Y direction motion;
Having output wavelength is λ
2The laser of second laser instrument (9) output of laser incide the described first spectrum spectroscope (2) through polarization splitting prism (10), quarter-wave plate (11), after this first spectrum spectroscope (2) reflection, advance along described main beam, this laser returns along former road after described sample (7) reflection, reflection through described polarization splitting prism (10), along this reflected light direction, be dispersing prism (12), the 3rd spectrum spectroscope (13), aperture (14), condenser lens (15) and detector (16) successively; Described the 3rd spectrum spectroscope (13) is λ with wavelength
2The working direction placement at 45 of laser;
White light source (17), the white light of this white light source (17) output is after semi-transparent semi-reflecting spectroscope (18) reflection, pass through the described second spectrum spectroscope (4), object lens (6), sample (7) successively, this white light returns along former road after sample (7) reflection, reaches CCD camera (9 after described semi-transparent semi-reflecting spectroscope (18) transmission; )
The input end of described first laser instrument (1) is connected with first output terminal of signal generator (20); The output terminal of described signal generator (20) second output terminals and described detector (16) is connected with the input end of oscillograph (21); The control end of described second laser instrument (9), signal generator (20), piezoelectric ceramics (5), two dimensional motion translation stage (8) all is connected with the output terminal of computing machine (22), and the output terminal of described CCD camera (19) and oscillograph (21) links to each other with the input end of described computing machine (22).
2. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the wavelength that described second laser instrument (9) sends is λ
2Laser, the wavelength that sends with described first laser instrument (1) is λ
1The hot spot that forms on the surface of described sample (7) of laser overlap.
3. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the wavelength that described second laser instrument (9) sends is λ
2The polarization direction of laser consistent with the transmitted light polarization direction of described polarization splitting prism (10).
4. material domain structure change kinetics process pick-up unit according to claim 1, it is characterized in that the angle of described dispersing prism (12) is placed satisfied: the wavelength that is sent by described first laser instrument (1) is λ
1Laser total reflection takes place on the exit facet of this dispersing prism, the wavelength that is sent by described second laser instrument (9) is λ
2Laser on the exit facet of this dispersing prism, see through;
5. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the described first spectrum spectroscope (2) is to wavelength X
1The transmissivity of laser is more than 90%, to wavelength X
2The reflectivity of laser is more than 90%.
6. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the described second spectrum spectroscope (4) is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The reflectivity of laser more than 90%, to the transmission of visible light of other wavelength in the white light source (17) more than 50%.
7. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that described the 3rd spectrum spectroscope (13) is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The transmissivity of laser more than 90%.
8. material domain structure change kinetics process pick-up unit according to claim 1, it is characterized in that described CCD camera (19) not only can obtain described sample (7) surface characteristics that described white light source (17) illuminates, and can to obtain by the wavelength that described first laser instrument (1) sends be λ
1Laser and the wavelength that sends of second laser instrument (9) be λ
2The hot spot feature that forms on described sample (7) surface of laser.
9. the method for utilizing described material domain structure change kinetics process pick-up unit to measure is characterized in that comprising the following steps:
1. the oscilloscope signal receiving mode is set:
The signal receiving modes of described oscillograph (21) is arranged to rising edge trigger action pattern, the signal that described signal generator (20) is sent is as the triggering source, when signal generator (20) sends a rising edge pulse signal, it is λ that described first laser instrument (1) sends wavelength
1Laser, oscillograph (21) record this moment is by the data of described detector (16) and signal generator (20) input signal;
2. utilize CCD camera (19) imaging, the searching wavelength is λ
1The focal position of laser:
Described computing machine (22) is controlled described signal generator (20) and is sent the low level direct current signal, and this signal outputs to described first laser instrument (1), and it is λ that this laser instrument sends the lower wavelength of power
1Laser; Simultaneous computer (22) described second laser instrument of control (9) does not send laser; Described sample (7) is placed on the described two-dimension moving platform (8), adjust described sample (7) perpendicular to the primary optical axis direction, regulate described two-dimension moving platform (8), the tested point of sample (7) is positioned on the focus of described object lens (6) front-right;
Computing machine (22) is controlled the input voltage of described piezoelectric ceramics (5), makes piezoelectric ceramics (5) be parallel to primary optical axis direction generation micro-displacement, laser λ
1Size and brightness at the hot spot of sample (7) surface formation also changes through object lens (6); This hot spot is imaged on the described CCD camera (19), and computing machine (22) is gathered the half-tone information of the hot spot on the described CCD camera (19), and when the gray-scale value maximum of hot spot, the tested point and the wavelength on then described sample (7) surface are λ
1Laser overlap through the focus that object lens (6) form;
3. measure the dynamic process that the material domain structure changes:
Described computing machine (22) is provided with the input voltage of described second laser instrument (9), and making second laser instrument (9) send wavelength is λ
2Laser, this input voltage is a DC voltage, the wavelength that this magnitude of voltage determines second laser instrument (9) to send is λ
2The power of laser; It is λ that second laser instrument (9) sends wavelength
2The power of laser lower, guarantee that on described sample (7) surface recurring structure changes; This wavelength is λ
2Laser after sample (7) reflection, forming the wavelength that has the dynamic information that sample (7) domain structure changes is λ
2Laser, received by described detector (16);
Regulate the unit length of transverse axis of described oscillograph (21) and the unit length of the longitudinal axis, make its in time with amplitude on the waveform of the required measurement that can show; Oscillograph (21) is in waits for the triggering state, regulate triggering level, make its high level less than required measured waveform;
According to measurement requirement, computing machine (22) is provided with amplitude, the pulse width of described signal generator (20) output signal, and it is λ that the amplitude of this signal determines described first laser instrument (1) to send wavelength
1The power of laser, the pulse width decision wavelength of this signal is λ
1Laser and the action time of described sample (7); Computing machine (22) control-signals generator (20) is sent pulse, triggers described first laser instrument (1) and oscillograph (21) simultaneously, and it is λ that first laser instrument (1) sends wavelength
1Laser action on sample (7), the wavelength that has the dynamic information that sample (7) domain structure changes that reflects through described sample (7) that the signal generator (20) that described oscillograph (21) writes down this moment simultaneously sends that pulse waveform and described detector (16) survey is λ
2The waveform of laser; After signal generator (20) sent a pulse signal, computing machine (22) was controlled described signal generator (20) shutdown signal; The wavelength that has the dynamic information that sample (7) domain structure changes that reflects through described sample (7) that pulse waveform that described oscillograph (21) sends tracer signal generator (20) and described detector (16) are surveyed is λ
2The waveform of laser send described computing machine (22) storage;
4. computing machine (22) is provided with the direction of motion and the move distance of two-dimension moving platform (8), mobile example (7) is to a new position to be measured, utilize new position to be measured, CCD camera (19) observation sample (7) surface whether damage is arranged, when not damaging, then enter step 6.;
5. when material surface has damage, then continue the position of control two-dimension translational platform (8) mobile example (7), utilize new position to be measured, CCD camera (19) observation sample (7) surface whether damage is arranged,, enter step 6. up to not damage;
6. repeating step 2. and 3., the dynamic process that measuring samples (7) domain structure changes;
7. after measurement was finished, the domain structure change curve of computer drawing sample (7) can draw the dynamic process that the material domain structure changes.
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