CN102320554B - Process for preparing nano seam by virtue of template alignment impressing - Google Patents
Process for preparing nano seam by virtue of template alignment impressing Download PDFInfo
- Publication number
- CN102320554B CN102320554B CN201110191568.2A CN201110191568A CN102320554B CN 102320554 B CN102320554 B CN 102320554B CN 201110191568 A CN201110191568 A CN 201110191568A CN 102320554 B CN102320554 B CN 102320554B
- Authority
- CN
- China
- Prior art keywords
- nano
- seam
- template
- impressing
- alignment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention relates to a process for preparing a nano seam by virtue of template alignment impressing. The process comprises the following steps of: firstly, preparing a three-layer structure comprising a rigid substrate layer, a flexible material layer and a rigid material layer; then carrying out alignment impressing by adopting a template, preparing corresponding impressing templates according to different nano seam structures, and applying an external pressure at a position required to produce the nano seam by virtue of the template by adopting an alignment process so as to carry out impressing; and finally carrying out secondary alignment pressing by utilizing a second flat plate to align nano seams on a film material in fracture dislocation, so as to further reduce the space between the nano seams, and carrying out alignment impressing by adopting a nano seam template to cause the flexible material layer to deform and the top rigid material film to break, so as to form a single nano seam or a nano seam array. The process provided by the invention can be used for effectively breaking through complex process flow and expensive processing equipment in the conventional nano seam preparation process, the nano seam structure can be prepared with low cost, and the process provided by the invention can be widely applied to the fields of SEDs (electron-emitter displays), molecular devices and the like.
Description
Technical field
The invention belongs to technical field of micro-nano manufacture, be specifically related to a kind of template alignment impressing preparation technology of nano-seam.
Background technology
Nano-seam is due in the special electronic effect of quantum yardstick, at surface-conduction-electron emission display SED, and molecular switch, molecular transistors equimolecular device aspect has important application.And the preparation technology of nano-seam retrains SED and molecular device large-scale application and fast-developing key factor just.At present, the conventional main method of preparing nano-seam has PSTM method, micro-processing method, electromigration and electrochemical process etc.PSTM method wherein, electromigration and electrochemical process need complicated control system to come monitoring pressure or the variation of electrical conductivity to control the formation of nano-seam; Micro-processing method relates to beamwriter lithography and ion beam etching, and process equipment is accurate expensive, complicated operation.In general, conventional nano-seam preparation method needs expensive working equipment or complicated technological process, has greatly limited the preparation efficiency of nano-seam.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of template alignment impressing preparation technology of nano-seam, do not need expensive working equipment or complicated technological process, can on rigid material film, prepare nano-seam.
For achieving the above object, the technical scheme that the present invention takes is:
A template alignment impressing preparation technology for nano-seam, comprises the following steps:
The first step, carry out rigid substrate, the preparation of flexible material and rigid material three-decker, rigid substrate is positioned at bottom, flexible material is positioned at intermediate layer, rigid material is positioned at top layer, rigid substrate is melten glass or metallic plate, flexible material is SU8 glue or epoxy resin, rigid material is that thickness is metal material or the semi-conducting material of Nano grade, according to single nano-seam preparation and the preparation of nano-seam array structure, the rigid material layer of top layer can be divided into equal one deck and patterned layer, all the top layer rigid material film of one deck is an integral layer, there is not patterned structures, once impression forms a nano-seam, the top layer stiffness films material of patterned layer adopts photoetching, etching technics to form certain graphic structure, and once impression forms nano-seam array,
Second step, adopt template to aim at impression, prepare corresponding impression block according to different nano-seam structures, adopting Alignment Process to make template apply external pressure in the position that need to produce nano-seam impresses, single nano-seam technique only needs the first flat board, utilize Alignment Process to guarantee that plate edge parallels with the position that produces nano-seam, the impression of exerting pressure, can obtain single nano-seam structure in desired location; In the preparation of nano-seam array structure, impression block is graphical template, and template projection produces nano-seam position alignment with wish, and the impression of exerting pressure, can obtain array nano-seam structure,
The 3rd step, utilizes the second dull and stereotyped secondary to aim at and exerts pressure, and utilizes the second flat board to exert pressure to whole top layer rigid material film nano crack structure graph area, and the nano-seam rupturing on the thin-film material misplacing is alignd, and further reduces the spacing of nano-seam.
Because the present invention adopts the template alignment impressing of nano-seam, cause flexible material layer distortion, the fracture of top layer rigid material film, form single nano-seam or nano-seam array, can effectively break through technological process complicated in conventional nano-seam preparation technology and expensive process equipment, nano-seam structure can be prepared cheaply, the aspects such as SED display and molecular device can be widely used in.
Accompanying drawing explanation:
Fig. 1 is the schematic diagram of rigid substrate of the present invention, flexible material and rigid material three-decker.
Fig. 2 is the schematic diagram of the three-decker of top of the present invention rigid material layer pattern.
Fig. 3 be the present invention adopt the first flat board with the schematic diagram that produces single nano-seam position alignment impression.
Fig. 4 is that the present invention adopts graphical template to aim at the schematic diagram of impression.
Fig. 5 is that graphical template of the present invention is aimed at the nano-seam array structure schematic diagram that impression obtains.
Fig. 6 is the schematic diagram that the present invention adopts the second flat board to exert pressure to whole patterned structural area secondary.
Fig. 7 is the present invention's nano-seam nano-seam structural representation obtaining that aligns that graphically misplaces.
The specific embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail.
A template alignment impressing preparation technology for nano-seam, comprises the following steps:
The first step, carry out rigid substrate 1, the preparation of flexible material 2 and rigid material 3 three-deckers, rigid substrate 1 is positioned at bottom, flexible material 2 is positioned at intermediate layer, rigid material 3 is positioned at top layer, rigid substrate 1 is melten glass or metallic plate, flexible material 2 is SU8 glue or epoxy resin, rigid material 3 for thickness be metal material or the semi-conducting material of Nano grade, according to single nano-seam preparation and the preparation of array nano-seam structure, the rigid material layer of top layer can be divided into equal one deck and patterned layer, all the top layer rigid material film of one deck is an integral layer, there is not patterned structures, once impression forms a nano-seam, the top layer stiffness films material of patterned layer adopts photoetching, etching technics to form certain graphic structure, and once impression forms nano-seam array,
Illustrate the detailed preparation process of equal one deck three-decker below: select melten glass as rigid substrate 1, spin coating one deck flexible material 2 thereon, flexible material 2 is SU8 glue, then adopt sputter or evaporation process to prepare the rigid material 3 of one deck Nano grade, rigid material 3 is metallic chromium layer, as shown in Figure 1;
The detailed preparation process of graphical three-decker: on equal one deck three-decker basis, further adopt photoetching, etching technics, on metallic chromium layer, process corresponding cyclic array structure, as shown in Figure 2,
Second step, adopt template to aim at impression, prepare corresponding impression block according to different nano-seam structures, adopting Alignment Process to make template apply external pressure in the position that need to produce nano-seam impresses, single nano-seam technique only needs the first flat board 4, utilize Alignment Process to guarantee that the first dull and stereotyped 4 edges parallel with the position that produces nano-seam, the impression of exerting pressure, can make flexible material 2 be out of shape in desired location, rigid material 3 distortion fracture dislocation, obtain single nano-seam structure, as shown in Figure 3; In the preparation of nano-seam array structure, impression block is graphical template 5, and its projection produces nano-seam position alignment with wish, the impression of exerting pressure, and rigid material 3 compressive deformation dislocation fractures, can obtain array nano-seam structure, as shown in Figure 4; The characteristic size of the nano-seam structure now obtaining is w1, as shown in Figure 5,
The 3rd step, utilize second dull and stereotyped 6 two alignings to exert pressure, utilize second dull and stereotyped 6 pairs of whole top layer rigid material film nano crack structure graph area to exert pressure, the nano-seam alignment that makes to rupture on the thin-film material misplacing, further reduce the spacing of nano-seam, as shown in Figure 6; The nano-seam feature size now forming is w2, and as shown in Figure 7, characteristic size w2 is less than characteristic size w1.
It is different from the rigidity of rigid material that the present invention takes full advantage of flexible material, utilize to aim at and impress the fracture that realizes stiffness films material, realize the preparation of single nano-seam or nano-seam array with this, simultaneously, take the second dull and stereotyped secondary impression, further reduce the spacing of nano-seam, this kind of process avoided Complicated Flow and the expensive process equipment in traditional nano-seam preparation technology, easy to operation, without extra detection system, once aim at impression and can realize single nano-seam or the preparation of nano-seam array.
Claims (1)
1. a template alignment impressing preparation technology for nano-seam, is characterized in that, comprises the following steps:
The first step, carry out rigid substrate, the preparation of flexible material and rigid material three-decker, rigid substrate is positioned at bottom, flexible material is positioned at intermediate layer, rigid material is positioned at top layer, rigid substrate is melten glass or metallic plate, flexible material is SU8 glue or epoxy resin, rigid material is that thickness is metal material or the semi-conducting material of Nano grade, according to single nano-seam preparation and the preparation of nano-seam array structure, the rigid material layer of top layer is divided into equal one deck or patterned layer, all one deck is an integral layer, there is not patterned structures, once impression forms a nano-seam, patterned layer adopts photoetching, etching technics to form certain graphic structure, and once impression forms nano-seam array,
Second step, adopt template to aim at impression, prepare corresponding impression block according to different nano-seam structures, adopting Alignment Process to make template apply external pressure in the position that need to produce nano-seam impresses, single nano-seam technique only needs the first flat board, utilize Alignment Process to guarantee that plate edge parallels with the position that produces nano-seam, the impression of exerting pressure, can obtain single nano-seam structure in desired location; In the preparation of nano-seam array structure, impression block is graphical template, and template projection produces nano-seam position alignment with wish, and the impression of exerting pressure, can obtain array nano-seam structure,
The 3rd step, utilizes the second dull and stereotyped secondary to aim at and exerts pressure, and utilizes the second flat board to exert pressure to whole top layer rigid material film nano crack structure graph area, and the nano-seam rupturing on the thin-film material misplacing is alignd, and further reduces the spacing of nano-seam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110191568.2A CN102320554B (en) | 2011-07-11 | 2011-07-11 | Process for preparing nano seam by virtue of template alignment impressing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110191568.2A CN102320554B (en) | 2011-07-11 | 2011-07-11 | Process for preparing nano seam by virtue of template alignment impressing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102320554A CN102320554A (en) | 2012-01-18 |
| CN102320554B true CN102320554B (en) | 2014-05-28 |
Family
ID=45448435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110191568.2A Active CN102320554B (en) | 2011-07-11 | 2011-07-11 | Process for preparing nano seam by virtue of template alignment impressing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102320554B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4325779A (en) * | 1979-04-17 | 1982-04-20 | Beatrice Foods Co. | Method for shaping and finishing a workpiece |
| US4576678A (en) * | 1979-07-25 | 1986-03-18 | Vlsi Technology Research Association | Pattern forming method |
| US4606788A (en) * | 1984-04-12 | 1986-08-19 | Moran Peter L | Methods of and apparatus for forming conductive patterns on a substrate |
| US5277749A (en) * | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
-
2011
- 2011-07-11 CN CN201110191568.2A patent/CN102320554B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4325779A (en) * | 1979-04-17 | 1982-04-20 | Beatrice Foods Co. | Method for shaping and finishing a workpiece |
| US4576678A (en) * | 1979-07-25 | 1986-03-18 | Vlsi Technology Research Association | Pattern forming method |
| US4606788A (en) * | 1984-04-12 | 1986-08-19 | Moran Peter L | Methods of and apparatus for forming conductive patterns on a substrate |
| US5277749A (en) * | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
| US5772905A (en) * | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
| CN102262991A (en) * | 2011-07-11 | 2011-11-30 | 西安交通大学 | Preparation method of electron emission source nano seam array of surface conduction electron emitter display (SED) |
Non-Patent Citations (4)
| Title |
|---|
| 万景.三层结构纳米压印及其在模板复制和硅纳米线传感器制备中的应用.《中国优秀硕士学位论文电子期刊库》.2009,第31-49页. |
| 三层结构纳米压印及其在模板复制和硅纳米线传感器制备中的应用;万景;《中国优秀硕士学位论文电子期刊库》;20090525;第39页第3段-43页图2.17 * |
| 刘红忠 等.纳米压印光刻中的多步定位研究.《西安交通大学学报》.2006, |
| 纳米压印光刻中的多步定位研究;刘红忠 等;《西安交通大学学报》;20060310;第261-264页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102320554A (en) | 2012-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102809852B (en) | A kind of flexible liquid crystal display and manufacture method thereof | |
| CN105070727B (en) | A kind of thin-film transistor array base-plate, its production method and display device | |
| CN104838037A (en) | Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate | |
| WO2012118916A3 (en) | Automated manufacturing processes for producing deformable polymer devices and films | |
| CN103779357A (en) | Array substrate, display device and array substrate manufacturing method | |
| CN108287383A (en) | A kind of wire grating polarizing film, its production method, display panel and display device | |
| CN103579434B (en) | The method of patterned sapphire substrate is prepared without remnant layer nanometer embossing | |
| CN102328903A (en) | Large-area nano-seam electrode parallel manufacturing method | |
| CN102320554B (en) | Process for preparing nano seam by virtue of template alignment impressing | |
| CN203941362U (en) | Liquid crystal panel | |
| CN206116459U (en) | Flexible capacitanc pressure sensor of sandwich formula | |
| CN105374467A (en) | Nanometer transfer method and nanometer functional device | |
| CN103762194A (en) | Method for manufacturing flexible display device | |
| CN102262324B (en) | Array substrate and manufacturing method thereof, liquid crystal display panel and liquid crystal display | |
| CN103499903B (en) | Auxiliary frame sealing plastic structure, to box substrate and display device | |
| CN105589599A (en) | Method for manufacturing graphene touch sensor | |
| CN102799059B (en) | Grayscale mask, array substrate and its preparation method thereof, and display device | |
| CN105911628A (en) | Wire grid polarizer structure, display substrate motherboard and manufacturing method thereof | |
| CN106098927B (en) | A kind of sandwich style flexible capacitance type pressure sensor and preparation method thereof | |
| CN102654459A (en) | Method for fabricating surface plasma resonance sensor chip | |
| CN102608811A (en) | Liquid crystal display device and manufacturing method thereof | |
| CN204303793U (en) | Based on CNT transfer and the flexible TFT backboard of self-aligned technology | |
| CN206114155U (en) | Flexible capacitanc pressure sensor of type that gradually bursts at seams | |
| CN203705779U (en) | Array substrate and display device | |
| CN103985671A (en) | Array substrate manufacturing method, array substrate and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |