CN102336394B - Method for manufacturing flexible micro electro mechanical system (MEMS) resistance reducing covering - Google Patents

Method for manufacturing flexible micro electro mechanical system (MEMS) resistance reducing covering Download PDF

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CN102336394B
CN102336394B CN201110328910.9A CN201110328910A CN102336394B CN 102336394 B CN102336394 B CN 102336394B CN 201110328910 A CN201110328910 A CN 201110328910A CN 102336394 B CN102336394 B CN 102336394B
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substrate
flexible
intermediate course
mems
resistance reducing
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CN102336394A (en
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李勇
李文平
朱效谷
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Tsinghua University
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Tsinghua University
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Abstract

The invention discloses a method for manufacturing a flexible micro electro mechanical system (MEMS) resistance reducing covering, and mainly aims to provide an improved manufacturing process. The method for manufacturing the resistance reducing covering comprises the following steps of: 1, preparing a middle interlayer on a substrate; 2, preparing a flexible underlayer on the substrate subjected to the step 1; 3, forming a metal layer on the substrate subjected to the step 2, and forming an electrolytic anode, an electrolytic cathode, an anode lead terminal, a cathode lead terminal and an internal connection by adopting an MEMS plane micro process; 4, preparing a flexible surface layer on the substrate subjected to the step 3, and forming a micro-pit array and a welding position connected with an external electric power conductor through photoetching or etching; and 5, peeling the structure formed on the middle interlayer from the substrate. A positive sequence method is adopted, namely the flexible underlayer is prepared first and then the flexible surface layer is prepared, procedures are reduced and the manufacturing process is simplified.

Description

The manufacture method of flexible MEMS resistance reducing covering
Technical field
The present invention relates to micro-manufacture and flexible MEMS technical field, relate in particular to the manufacture method of a kind of flexible MEMS (Micro Electro-Mechanical Systems) resistance reducing covering.
Background technology
When the water surface and underwater sailing body travel, suffered running resistance comprises pressure drag, row wave resistance and skin friction resistance etc., and wherein surperficial frictional resistance occupies maximum specific weight conventionally, especially true for length and the larger sail body of length-width ratio/draw ratio.Therefore, reduce sail body skin friction resistance and can effectively improve the speed of a ship or plane, increase voyage, reduce energy consumption, there is huge economic worth.
Theory and the application study of frictional resistance drag reduction technology at present mainly concentrates on turbulent boundary layer, relate to multiple technologies scheme, the such as passive drag reduction mode such as surface topography drag reduction (as drag reduction by riblets), bionic, drag-reducing (as compliant wall drag reduction), and polymeric additive drag reduction, injection bubble drag-reduction etc. need injected material or catabiotic drag reduction mode.Forming one deck air film on sail body surface is one of drag reduction mode that theoretical drag reducing efficiency is the highest now, has been subject in recent years paying close attention to widely.Main thought is: with air film, most of sail body outer surface is wrapped up, thereby change liquid-solid interface is liquid-gas-solid interface, greatly reduces frictional resistance.At present mainly with supercavitation with spray into two kinds of modes of gas and form air film.For jet mode, need extra gas injection system, and the essential continuous firing of this system, this dynamical system to sail body is larger burden.For supercavitation mode, have cavitation noise, and need to adopt special engine, and power consumption is very big.
Chinese invention patent " flexible MEMS resistance reducing covering and manufacture method thereof " (patent No. ZL200910079713.0, January 26 2011 Granted publication day) discloses a kind of resistance reducing covering and manufacture method thereof of utilizing resident microbubble to realize drag reduction.Its manufacture method weak point is: adopted backward method to prepare resistance reducing covering, first prepared flexible material film top layer, then prepared flexible material film-substrate.Thereby brought following two problems: 1., need to exist in the middle of operation adopt body silicon etching process that hard substrate silicon chip is removed completely, increased difficulty and the cost of technique; 2., need to exist independent operation to be processed to form the welding position that connects externally fed wire.
Summary of the invention
For the problems referred to above, the invention provides a kind of manufacture method of improved flexible MEMS resistance reducing covering, it adopts positive sequence method and has simplified manufacturing process.
For achieving the above object, the manufacture method of flexible MEMS resistance reducing covering of the present invention, comprises the steps:
Step 1, in substrate, prepare one deck intermediate course;
Step 2, in the described substrate of completing steps 1, prepare one deck flexible substrate;
Step 3, in the described substrate of completing steps 2, form layer of metal layer, and adopt the fine technique of MEMS plane on described metal level, to form electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector;
Step 4, in the described substrate of completing steps 3, prepare one deck flexible skin, and form micro-pit array and connect the welding position of externally fed wire by photoetching or etching;
Step 5, the structure that is formed on described intermediate course top is stripped down from described substrate.
Further, the polymer of described intermediate course is PDMS (dimethyl silicone polymer), and in the prepolymer before this polymer cure, the quality proportioning of curing agent and PDMS monomer is 0.05～0.2: 1.
Further, the polymer of described flexible substrate is polyimides.
Further, the metal material of described metal pattern is platinum.
Further, the described fine technique of MEMS plane comprises: whirl coating, photoetching, sputter and ultrasonic peeling off.
Further, the polymer of described flexible skin is SU-8 photoresist or polyimides.
Further, wherein, the specific implementation step of step 5 is as follows:
Use thin blade and tip tweezers that the structure mechanical stripping from described substrate that is formed on described intermediate course top is got off.
Further, wherein, the specific implementation step of step 5 is as follows:
The described substrate of completing steps 4 is immersed in organic chemistry solvent, to dissolve described intermediate course or to change the character of described intermediate course, the structure that is formed on described intermediate course top is come off from described substrate.
The invention has the beneficial effects as follows:
1. the present invention adopts positive sequence method, first prepares flexible substrate, then prepares flexible skin, has reduced operation, has simplified manufacture craft.
2. select PDMS (dimethyl silicone polymer) as intermediate course.PDMS film has the flexible and less surface energy of height, and thin blade easy to use carries out mechanical separate to the stressed-skin construction that is formed on described intermediate course top with substrate with tip tweezers.Meanwhile, PDMS, to organic solvent, as acetone, oxolane etc., has imbitition, a little less than the PDMS surface viscosity after imbibition becomes extremely, and can deform, and produces internal stress, is convenient to realize naturally coming off of stressed-skin construction.
3. select SU-8 photoresist as skin-material.SU-8 photoresist lithography performance is good, can realize small size, the bowl configurations of large depth-to-width ratio, high steepness.Meanwhile, SU-8 photoresist physical and chemical performance is stable, and the resistance reducing covering of preparation can meet the instructions for use under varying environment.
Accompanying drawing explanation
Fig. 1 is the flow chart of a specific embodiment of the manufacture method of flexible MEMS resistance reducing covering of the present invention;
Fig. 2 is the structural representation of hard substrate of the present invention;
Fig. 3 is the structural representation that the present invention prepares one deck intermediate course in described hard substrate;
Fig. 4 is the structural representation that the present invention prepares one deck flexible substrate on described intermediate course;
Fig. 5 is the structural representation that the present invention forms the metal pattern that one deck contains electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector in described flexible substrate;
Fig. 6 is the structural representation that the present invention prepares one deck flexible skin in described metal pattern layer;
Fig. 7 be the present invention by described flexible skin is carried out to photoetching or etching, form the structural representation of micro-pit array and lead terminal welding position;
Fig. 8 is the structural representation of the resistance reducing covering of the present invention after hard substrate separates.
Reference numeral:
1-substrate; 2-intermediate course; 3-flexible substrate; 4-electrolytic anode; 5-electrolysis cathode;
6-anode lead terminal; 7-cathode lead terminal; 8-flexible skin; 9-nick hole.
The specific embodiment
Below in conjunction with Figure of description, the present invention will be further described.
As shown in Figure 1, the manufacture method of flexible MEMS resistance reducing covering of the present invention, comprises the steps:
Step 1, preparation substrate 1.Hard substrate is preferably elected in this substrate as, as: single silicon chip or sheet metal after polishing thrown, as shown in Figure 2.
Step 2, in described substrate 1 prepolymer of spin on polymers, after solidifying, form intermediate course 2, as described in Figure 3.Described polymer is PDMS, and in the prepolymer before this polymer cure, the quality proportioning of curing agent and PDMS monomer is 0.05～0.2: 1.
Step 3, in the described substrate 1 of completing steps 2 prepolymer of spin on polymers, after solidifying, form flexible substrate 3, as described in Figure 4.Described polymer is polyimides.
Step 4, in the described substrate 1 of completing steps 3, form layer of metal layer, and adopt the fine technique of MEMS plane on described metal level, to form electrolytic anode 4, electrolysis cathode 5, anode lead terminal 6, cathode lead terminal 7 and interconnector, as shown in Figure 5.Wherein, described metal pattern preferred material is platinum, so that electrolysis electrode stable not loss in brine electrolysis reaction.The described fine technique of MEMS plane specifically comprises: whirl coating, photoetching, sputter and ultrasonic peeling off.
Step 5, in the described substrate 1 of completing steps 4 prepolymer of spin on polymers, after solidifying, form flexible skin 8, as shown in Figure 6.Described polymer can photoetching or etching, and the present invention preferentially recommends polyimides and SU-8 photoresist.
Step 6, in the described substrate 1 of completing steps 5, described flexible skin 8 is carried out to photoetching or etching, form nick and cheat 9 arrays and connect the welding position of externally fed wire, as shown in Figure 7.Described anode lead terminal 6 is connected electrolytic anode 4 and electrode cathode 5 conductings in cheating with each nick respectively with cathode lead terminal 7 by inside.
Step 7, the structure that is formed on described intermediate course 2 tops is stripped down from described substrate 1, form the resistance reducing covering of structure as shown in Figure 8.Wherein, this step can specifically realize by two kinds of modes, and mode one adopts mechanical system to be isolated, and as resistance reducing covering structure shaved from intermediate course with thin blade, or uses tweezers that stressed-skin construction is torn from intermediate course.Mode two, employing chemical mode is isolated, as by substrate and the intermediate course having prepared, flexible substrate, metal film layer and flexible skin be immersed in as a whole in organic chemistry solvent, to dissolve intermediate course, or the character of change intermediate course, stressed-skin construction is come off naturally.
Embodiment 1:
Manufacture method comprises the steps:
1.1, prepare hard substrate: select the common single carrier of silicon chip as whole flexible resistance reducing covering processing of throwing.
1.2, prepare intermediate course: PDMS monomer is mixed as the ratio of 5: 1～20: 1 take the mass ratio of monomer with curing agent, stir and vacuumize and process 15min to remove the bubble in mixed liquor.Use sol evenning machine that the mixed solution stirring is spin-coated in hard substrate, be then placed in baking oven, at 90 ℃, heat 60min PDMS is solidified.In this step, by regulating the rotating speed of sol evenning machine and selecting different even glue-curing number of times can obtain the PDMS film of different-thickness.In the present embodiment, the thickness of PDMS film is 20 μ m.
1.3, preparation flexible substrate: spin-on polyimide performed polymer coating adhesive on intermediate course, and heating cure.In this step, by regulating the rotating speed of sol evenning machine and selecting different even glue-curing number of times can obtain the Kapton of different-thickness.In the present embodiment, the thickness of Kapton is 20 μ m.
1.4, preparation metal pattern layer: form layer of metal layer in described flexible substrate, and on described metal level, adopt the fine technique of MEMS plane to prepare metal pattern, form electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector.Adopt whirl coating-photoetching-sputter-ultrasonic technique of peeling off to prepare platinum figure on polyimide layer (being flexible substrate), platinum layer thickness is
Figure BDA0000102279550000061
1.5, preparation flexible skin: spin coating SU-8 photoresist on described flexible substrate and described metal pattern, is then placed in and carries out front baking in baking oven.In this step, by regulating the rotating speed of sol evenning machine and selecting different even glue-curing number of times can obtain the SU-8 photoresist film of different-thickness.In the present embodiment, the thickness of SU-8 photoresist film is 50 μ m.
1.6, photoetching: the SU-8 photoresist of preparing in above-mentioned steps is exposed, developed and dries afterwards, form nick hole and lead terminal welding position.
1.7, separate stressed-skin construction: described hard substrate and the intermediate course having prepared, flexible substrate, metal film layer and flexible skin are immersed in the beaker that fills tetrahydrofuran solution as a whole, and beaker is placed in to supersonic cleaning machine, auxiliary with ultrasonic vibration, realize naturally coming off of stressed-skin construction.
Embodiment 2:
Manufacture method comprises the steps:
2.1, prepare hard substrate: the carrier of selecting the sheet metal after polishing to process as whole flexible resistance reducing covering.
2.2, prepare intermediate course: PDMS monomer is mixed as the ratio of 5: 1～20: 1 take mass ratio with curing agent, stir and vacuumize and process 15min to remove the bubble in mixed liquor.Use sol evenning machine that the mixed solution stirring is spin-coated in hard substrate, be then placed in baking oven, at 90 ℃, heat 60min PDMS is solidified.In this step, by regulating the rotating speed of sol evenning machine and selecting different even glue-curing number of times can obtain the PDMS film of different-thickness.In the present embodiment, the thickness of PDMS film is 200 μ m.
2.3, preparation flexible substrate: spin-on polyimide performed polymer coating adhesive on intermediate course, and heating cure.In this step, by regulating the rotating speed of sol evenning machine and selecting different even glue-curing number of times can obtain the Kapton of different-thickness.In the present embodiment, the thickness of Kapton is 50 μ m.
2.4, preparation metal pattern layer: form layer of metal layer in described flexible substrate, and on described metal level, adopt the fine technique of MEMS plane to prepare metal pattern, form electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector.Adopt whirl coating-photoetching-sputter-ultrasonic technique of peeling off to prepare platinum figure on polyimide layer (being flexible substrate), platinum layer thickness is
Figure BDA0000102279550000071
2.5, preparation flexible skin: spin-on polyimide performed polymer coating adhesive on described flexible substrate and described metal pattern, and heating cure.In this step, by regulating the rotating speed of sol evenning machine and selecting different even glue-curing number of times can obtain the Kapton of different-thickness.In the present embodiment, the thickness of Kapton is 50 μ m.
2.6, etching: the Kapton of preparing in above-mentioned steps is carried out to etching, form nick hole and lead terminal welding position, etching depth is as the criterion to expose metal pattern.
2.7, separate stressed-skin construction: use thin blade and tweezers that stressed-skin construction is separated from intermediate course and hard substrate.
Above embodiment all adopts method of the present invention, and wherein listed concrete technology method, parameter and size is only for example, but not restriction to the inventive method scope of application.Any be familiar with those skilled in the art the present invention disclose technical scope in, the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain that claim was defined.

Claims (4)

1. a manufacture method for flexible MEMS resistance reducing covering, is characterized in that, comprises the steps:
Step 1, in substrate, prepare one deck intermediate course;
Step 2, in the described substrate of completing steps 1, prepare one deck flexible substrate;
Step 3, in the described substrate of completing steps 2, form layer of metal layer, and adopt the fine technique of MEMS plane on described metal level, to form electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector;
Step 4, in the described substrate of completing steps 3, prepare one deck flexible skin, and form micro-pit array and connect the welding position of externally fed wire by photoetching or etching;
Step 5, the structure that is formed on described intermediate course top is stripped down from described substrate;
Wherein, the polymer of described intermediate course is PDMS, and in the prepolymer before this polymer cure, the quality proportioning of curing agent and PDMS monomer is 0.05～0.2:1; The polymer of described flexible skin is SU-8 photoresist or polyimides;
The specific implementation step of above-mentioned steps 5 is as follows:
Use thin blade and tip tweezers that the structure mechanical stripping from described substrate that is formed on described intermediate course top is got off;
Or;
The specific implementation step of step 5 is as follows:
The described substrate of completing steps 4 is immersed in organic chemistry solvent, to dissolve described intermediate course or to change the character of described intermediate course, the structure that is formed on described intermediate course top is come off from described substrate.
2. the manufacture method of flexible MEMS resistance reducing covering according to claim 1, is characterized in that, the polymer of described flexible substrate is polyimides.
3. the manufacture method of flexible MEMS resistance reducing covering according to claim 1, is characterized in that, the metal material of described metal level is platinum.
4. the manufacture method of flexible MEMS resistance reducing covering according to claim 1, is characterized in that, the described fine technique of MEMS plane comprises: whirl coating, photoetching, sputter and ultrasonic peeling off.
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CN109823508A (en) * 2019-02-22 2019-05-31 西安电子科技大学 The high-speed aircraft flexible covering that thermal protection of transfiniting is perceived with survival condition

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CN103754819B (en) * 2014-01-21 2015-10-21 清华大学 The preparation method of flexible MEMS resistance reducing covering
CN107840304A (en) * 2017-10-31 2018-03-27 北京信息科技大学 Prepare method, the flexible electrochemical device of flexible electrochemical device
CN110713167B (en) * 2018-07-13 2024-01-16 浙江清华柔性电子技术研究院 Microfluidic device and microfluidic system

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