CN102347395A - Photovoltaic cell manufacture method - Google Patents

Photovoltaic cell manufacture method Download PDF

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Publication number
CN102347395A
CN102347395A CN2010106027851A CN201010602785A CN102347395A CN 102347395 A CN102347395 A CN 102347395A CN 2010106027851 A CN2010106027851 A CN 2010106027851A CN 201010602785 A CN201010602785 A CN 201010602785A CN 102347395 A CN102347395 A CN 102347395A
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photovoltaic cell
mould
cell substrate
substrate
mask layer
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涂志强
陈俊郎
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A photovoltaic cell manufacture method is disclosed. The method includes providing a photovoltaic cell substrate; and texturizing a surface of the photovoltaic cell substrate. The texturizing implements a nanoimprint lithography process to expose a portion of the surface of the photovoltaic cell substrate. An etching process is performed on the exposed portion of the surface of the photovoltaic cell substrate. An embodiment of the invention improves texturization surface of the surface of the photovoltaic component and further increases light conversion rate of the photovoltaic component.

Description

The manufacturing approach of photovoltaic cell
Technical field
The present invention relates to a kind of photovoltaic cell, particularly relate to a kind of manufacture method of photovoltaic cell.
Background technology
One of method for preparing photovoltaic cell (or claiming solar cell) is the texture method.In photovoltaic cell, the texture method can form the texture surface of substrate (or wafer).The texture method can increase the reflectivity of incident light on the surface allows photovoltaic cell absorb more light, reduces the loss of the luminous reflectance of substrate with the reduction incident light, and increases the optical path length of incident light.In photovoltaic cell, above-mentioned adjustment all can increase the light transfer ratio that transform light energy is an electric energy.
Existing texture method can only form uncontrolled at random texture surface, and this can cause optical path that length differs and the reflection that can't expect.The wet etch method of one of texture method can form large stretch of texture surface, but its random distribution can't design texture surface.The etch-rate of wet etch method and the uniformity are subject to surface contamination or alloy influence, the structure and the roughness on final influence surface.The dry ecthing of one of texture method can be plasma etching like the plasma etching (such as the little shadow of nanosphere (nanosphere lithography) technology) that looses of plasma etching and differential at random.Though the texture surface that plasma etching forms is even and have preferable anti-reflective and controllable depth-width ratio, needs the characteristic of little shadow (photolithography) technology can increase cost and reduce output.For instance, the little shadow of nanosphere forms the nanosphere material on substrate, then carries out the little shadow and the first road etching and makes little shadow ball material have required form and size, carries out little shadow ball design transfer that the second road etch process makes moulding again to substrate.Thus, substrate pattern depends on that little shadow ball distributes, and the lithography process and the first road etch process are dependent in the distribution of little shadow ball.Present little shadow ball lithography process has two subject matters, and promptly random patternization is controlled with distribution.Laser of one of texture method and/or machine cuts can form uniformity and controlled all preferable picture on surface, but this method is understood wounded substrate and/or caused the lattice defect in the substrate.This will make the electron hole combine again and reduce the light transfer ratio.In sum, though existing texture method is widely used in the industry, but still can't meet all demands.
Summary of the invention
For overcoming the defective of prior art, one embodiment of the invention provides a kind of manufacturing approach of photovoltaic cell, comprises the photovoltaic cell substrate is provided; And carry out the surface of texture step with texture photovoltaic cell substrate; Wherein the texture step comprises and carries out nano-imprint lithography (nanoimprint lithography) technology; Exposing the part surface of photovoltaic cell substrate, and carry out etch process on the part surface that the photovoltaic cell substrate exposes.
Another embodiment of the present invention provides a kind of manufacturing approach of photovoltaic cell, and comprising provides the photovoltaic cell substrate; Form mask layer on the photovoltaic cell substrate; Exert pressure to mask layer with mould, to form patterned mask layer, wherein mould has the layout structure, and patterned mask layer has the thickness contrast; Remove mould from patterned mask layer; And make mask with patterned mask layer, etching photovoltaic cell substrate is to form textured surfaces in the photovoltaic cell substrate.
Further embodiment of this invention provides a kind of manufacturing approach of photovoltaic cell, and comprising provides solar cell substrate; Form mask layer on solar cell substrate; Mould is provided, and mould has the predetermined pattern structure; Predetermined pattern structure stamp mask layer with mould; Predetermined pattern structure self-masking layer is transferred to solar cell substrate, to form a plurality of grooves in solar cell substrate; And on solar cell substrate, remove mask layer afterwards.
Embodiments of the invention can improve the textured surfaces on photovoltaic element surface, and further increase the light transfer ratio of photovoltaic element.
Description of drawings
Fig. 1 is in the various embodiments of the present invention, the flow chart of the formation method of photovoltaic element;
Fig. 2-Fig. 7 is in one embodiment of the invention, its structure cutaway view of photovoltaic element in the different step of the flow chart of Fig. 1;
Fig. 8-Figure 13 is in one embodiment of the invention, its structure cutaway view of photovoltaic element in the different step of the flow chart of Fig. 1; And
Figure 14 A-Figure 14 D is in the various embodiments of the present invention, the perspective view of the photovoltaic element of Figure 13.
[main element symbol description]
100～method; 102,104～step; 200,400～photovoltaic element; 210,410～substrate; 212,412～surface; 212A, 412A～texture surface; 220,420～material layer; 220A, 420A～patterned material layer; 230,430～mould; 231,431～bulge-structure; 232,242,432,442～opening; 240,440～etch process; 244～taper surface; 400A, 400B, 400C, 400D～periodic structure; 443～column.
Embodiment
Following content provides various embodiments or instance so that various features of the present invention to be described.For the purpose of simplifying the description, will adopt specific unit and compound mode for example.Yet only unrestricted the present invention of these special cases in order to explanation.For instance, form a certain element and on another element, comprised two elements, perhaps be separated with other element both of these cases between the two for directly contact.In this example, form structure and on substrate, comprise structure and be formed on the substrate and/or in the substrate.In addition for the purpose of simplifying the description, the present invention adopts same reference numerals to indicate the like of different embodiment in different accompanying drawings, but on behalf of the element among the different embodiment, the symbol of above-mentioned repetition only have identical corresponding relation in order to simplification.
Fig. 1 is in one embodiment of the invention, forms the flow chart of the method 100 of photovoltaic element.As described below, method 100 provides texture surface to have in the photovoltaic element of optical grating construction being applied to.The initial step 102 of method 100 provides semiconductor substrate.Then carry out step 104, form texture surface in semiconductor substrate with nano-imprint lithography technology and etch process.The hot nano-imprint lithography technology of nano-imprint lithography process using (such as thermoplasticity and heat cured nano impression), directly stamping technique (claim not only method of embossing), ultraviolet nano-imprint lithography (UV-NIL) technology (but also claiming UV cured nano impression method) or above-mentioned combination.In other embodiments, other nano-imprint lithography known in the art (NIL) technology of nano-imprint lithography process using are such as NIL technology or its combination of future development.The process environments of NIL can be vacuum, general atmosphere or other proper environment.NIL technology can further adopt multiple technique of alignment.Etch process can be dry ecthing, wet etching, other suitable etchings or above-mentioned combination.Before the method 100, among, with can carry out other additional steps afterwards.In the method 100 of other embodiment, some step can or be omitted by displacement.As described below, can prepare the photovoltaic element of various embodiments according to method shown in Figure 1 100.
Fig. 2 to Fig. 7 is among the embodiment, prepares photovoltaic element 200 (claiming solar cell again), the cutaway view of the part or all of structure in different step according to the flow chart of Fig. 1.For making those of ordinary skills be easy to understand notion of the present invention, with reduced graph 2 to Fig. 7.Photovoltaic element 200 can further have supernumerary structure, and the photovoltaic element of following other embodiment 200 is replaceable or omit some structure.
In Fig. 2, substrate 210 is provided.Substrate 210 can be the semiconductor substrate that contains silicon, such as monocrystalline silicon, polysilicon or amorphous silicon.Substrate 210 can have any suitable crystallization direction like (100), (110) or (111).In this embodiment, semiconductor substrate 210 is a p type doped substrate.In other embodiments, semiconductor substrate 210 can be n type doped substrate.In other embodiments, substrate 210 contains second half conductor element such as germanium; Semiconducting compound such as carborundum, GaAs, gallium phosphide, indium phosphide, indium arsenide and/or indium antimonide; Semiconducting alloy such as sige alloy, gallium arsenide phosphide, aluminium arsenide indium, aluminum gallium arsenide, Gallium indium arsenide, InGaP and/or gallium arsenide phosphide indium; Or above-mentioned combination.
Extremely shown in Figure 7 like Fig. 2, but the surface 212 of nanometer embossing and etch process texturing substrate 210 forms the texture surface 212A in the substrate 210.In Fig. 2, form material layer 220 (claiming intermediate layer or mask layer again) on substrate 210 (or surface 212 of substrate 210), its formation method can be method of spin coating, planarization polishing or other appropriate process.It is clean before forming material layer 220, can to carry out cleaning technology such as RCA earlier, with the pollutant on the surface 212 that removes substrate 210.Material layer 220 is a mask material, like the single high molecular silicone copolymers that gathers methyl propionyl acid methyl esters (PMMA) or polystyrene (PS), thermoplasticity mask material, UV cured mask material as gathering (dimethyl siloxane) (PDMS) organic group's couplet or graft copolymer, the liquid mask material of thermmohardening, the UV cured liquid mask material that is used for the room temperature nano impression, other known appropriate mask materials, the mask material of future development or above-mentioned combination.Material layer 220 can be sandwich construction.Material layer 220 may have a suitable thickness, for example, between about a few hundred angstroms
Figure BSA00000397554700041
to about several microns (μm) between.In this embodiment, the material layer 220 has a thickness between about
Figure BSA00000397554700042
to between approximately 1μm.
Like Fig. 3-shown in Figure 5, remove mould 230 after exerting pressure to the material layer 220 with mould 230, make the material layer 220 behind the impression have predetermined pattern.The predetermined pattern of mould 230 is made up of bulge-structure 231 and opening 232 (or being called hole).The bulge-structure 231 of predetermined pattern can be designed to multiple shape with opening 232, looks closely required specific pattern or ad hoc structure and decides.In this embodiment, mould 230 contains silicon.In other embodiments, mould 230 contains quartz (silica), carborundum, silicon nitride, metal, sapphire, diamond, resin, other known proper mold materials, the mold materials of future development or above-mentioned combination.In one embodiment, mould 230 can be quartz with patterned metal layer such as chromium to form predetermined pattern.In another embodiment, mould 230 can be quartz with patterning silication molybdenum layer to form predetermined pattern.
Like Fig. 3 and shown in Figure 4, mould 230 can be exerted pressure under proper temperature and pressure to material layer 220, to form the thickness contrast in the material layer 220.In a particular embodiment, because the material layer 220 of bulge-structure 231 belows is removed in the opening 232 of clamp-oning mould 230, the specific pattern of mould 230 will be transferred to substrate 220 as shown in Figure 5.The temperature of imprint process and pressure depend on the characteristic of mould 230 and material layer 220, and imprint process can operate in vacuum or the general atmosphere.Then hardened material layer 220 makes its moulding.After removing mould 230, material layer 220 its bossings of moulding will can not be back to sunk part.For instance, when material layer 220 is hot mask material, above-mentioned forming step will heat up surpass material layer 220 glass transition temperature with liquefied material layer 220, make in its opening that is transferred to mould 230 232.Meet the pattern of mould 230 when material layer 220 after, can be cooled to be lower than material layer 220 glass transition temperature with curing material layer 220.In another embodiment, when material layer 220 was thermmohardening or UV cured material, material layer 220 at the beginning can be liquid state, exerted pressure to material layer 220 at mould 230, and material layer 220 will meet the pattern of mould 230.Then with thermmohardening, UV cured or above-mentioned combination and solidification material layer 220.Except said method, also can adopt other sclerosis and moulding process with patterned material layer.
As shown in Figure 5, after removing mould 230, can keep patterned material layer 220A.In this embodiment, patterned material layer 220A contains opening 234 exposed portions serve substrates 210 (or part surface 212 of substrate 210).In subsequent technique such as etch process, patterned material layer 220A is with mask part substrate 210.On the part that substrate 210 exposes, can residual a spot of thin-material layers 220.
In Fig. 6, on substrate 210, carry out etch process 240.In a particular embodiment, etch process puts on the part surface 212 that substrate 210 exposes.In this embodiment, etch process 240 is a wet etching, and its etching solution that adopts can be acidity or alkalescence.Alkaline etch solution can contain potassium hydroxide, isopropyl alcohol or above-mentioned combination.Acidic etching solution can contain nitric acid, hydrofluoric acid or above-mentioned combination.In other embodiments, alkalescence or acidic etching solution can be other etching solutions known in the art, even the alkalescence of future development or acidic etching solution.In addition in another embodiment, can adopt the practice of dry ecthing collocation wet etching.Residue in the situation on the part substrate 210 that exposes etch process 240 removable these residual thin-material layers 220 in thin-material layers 220; Perhaps before etch process 240, can remove this residual thin-material layers 220 earlier, it removes method and can be dry ecthing such as reactive ion etching (RIE).
Etch process 240 can be transferred to substrate 210 with the pattern (or design) of patterned material layer 220A, and this pattern just in time predetermined pattern with aforementioned mould 230 is opposite.In a particular embodiment, etch process 240 forms opening 242 in the surface 212 of substrate 210, promptly forms texture surface 212A.Taper surface 244 definables contain the texture surface 212A of opening 242.In this embodiment, v type opening 242 is by 244 definition of at least two conical surfaces.In another embodiment, can consider to adopt other shaped aperture.In addition, the shape of each opening 242 can be identical or different.As shown in Figure 7, then remove patterned material layer 220A as divesting method with suitable technology.In this embodiment, the solution that removes of patterned material layer 220A can be sulfuric acid and hydrogen peroxide solution.In other embodiments, can be known in the art the solution of solution or future development in order to the solution that removes patterned material layer 220A.
The texture surface 212A of photovoltaic element 220 has a plurality of openings 242 and conical surface 244.Compare with existing photovoltaic element, the texture surface 212A that above-mentioned nano-imprint lithography technology and etch process are accomplished has more complicated and more intensive structure, helps allowing light be trapped among the texture surface 212A.Sunkenization of the light ratio of texture surface 212A is high more, and the optical path of incident light is long more, and this will make photovoltaic element absorb more light.In addition, increase optical path and also can increase electron-hole pair.Thus, through sunkenization of the light degree of increase texture surface 212 and the practice of optical path, can allow photovoltaic element 200 have higher light conversion efficiency and sunkenization of light effect.Opposite with general nano-imprint process, adopt nano-imprint lithography technology can precisely control the pattern of texture surface 212A.In a particular embodiment, can control the size and the distribution of its pattern of texture surface 212A easily through the predetermined pattern of mould 230.Compare with other texture technologies such as lithography process and/or nano-imprint lithography technology, adopt mould 230 more to be prone to form texture surface complicated and highly dense intensity with predetermined pattern.The design of above-mentioned predetermined pattern is the absorbing wavelength maximum according to photovoltaic element.
Fig. 8 to Figure 13 is among another embodiment, prepares photovoltaic element 400 (claiming solar cell again), the cutaway view of the part or all of structure in different step according to the flow chart of Fig. 1.For making those of ordinary skills be easy to understand notion of the present invention, with reduced graph 8 to Figure 13.Photovoltaic element 400 can further have supernumerary structure, and the photovoltaic element of following other embodiment 400 is replaceable or omit some structure.
In Fig. 8, substrate 410 is provided.Substrate 410 can be the semiconductor substrate that contains silicon, such as monocrystalline silicon, polysilicon or amorphous silicon.Substrate 410 can have any suitable crystallization direction like (100), (110) or (111).In this embodiment, semiconductor substrate 410 is a p type doped substrate.In other embodiments, semiconductor substrate 410 can be n type doped substrate.In other embodiments, substrate 410 contains second half conductor element such as germanium; Semiconducting compound such as carborundum, GaAs, gallium phosphide, indium phosphide, indium arsenide and/or indium antimonide; Semiconducting alloy such as sige alloy, gallium arsenide phosphide, aluminium arsenide indium, aluminum gallium arsenide, Gallium indium arsenide, InGaP and/or gallium arsenide phosphide indium; Or above-mentioned combination.
Extremely shown in Figure 13 like Fig. 8, but the surface 412 of nanometer embossing and etch process texturing substrate 410 forms the texture surface 412A in the substrate 410.In Fig. 8, form material layer 420 (claiming intermediate layer or mask layer again) on substrate 410 (or surface 412 of substrate 410), its formation method can be method of spin coating, planarization polishing or other appropriate process.It is clean before forming material layer 420, can to carry out cleaning technology such as RCA earlier, with the pollutant on the surface 412 that removes substrate 410.Material layer 420 is a mask material, like the single high molecular silicone copolymers that gathers methyl propionyl acid methyl esters (PMMA) or polystyrene (PS), thermoplasticity mask material, UV cured mask material as gathering (dimethyl siloxane) (PDMS) organic group's couplet or graft copolymer, the liquid mask material of thermmohardening, the UV cured liquid mask material that is used for the room temperature nano impression, other known appropriate mask materials, the mask material of future development or above-mentioned combination.Material layer 420 can be sandwich construction.Material layer 420 may have a suitable thickness, for example, between about a few hundred angstroms
Figure BSA00000397554700071
to about several microns (μm) between.In this embodiment, the material layer 420 has a thickness between about
Figure BSA00000397554700072
to between approximately 1μm.
Like Fig. 9-shown in Figure 11, remove mould 430 after exerting pressure to the material layer 420 with mould 430, make the material layer 420 behind the impression have predetermined pattern.The predetermined pattern of mould 430 is made up of bulge-structure 431 and opening 432 (or being called hole).The bulge-structure 431 of predetermined pattern can be designed to multiple shape with opening 432, looks closely required specific pattern or ad hoc structure and decides.In this embodiment, bulge-structure 431 is designed to grating with opening 432, and grating has required spacing.Mould 430 contains quartz (silica), carborundum, silicon nitride, metal, sapphire, diamond, resin, other known proper mold materials, the mold materials of future development or above-mentioned combination.In one embodiment, mould 430 can be quartz with patterned metal layer such as chromium to form predetermined pattern.In another embodiment, mould 430 can be quartz with patterning silication molybdenum layer to form predetermined pattern.
Like Fig. 9 and shown in Figure 10, mould 430 can be exerted pressure under proper temperature and pressure to material layer 420, to form the thickness contrast in the material layer 420.In a particular embodiment, because the material layer 420 of bulge-structure 431 belows is removed in the opening 432 of clamp-oning mould 430, the specific pattern of mould 430 will be transferred to substrate 420 as shown in figure 11.The temperature of imprint process and pressure depend on the characteristic of mould 430 and material layer 420, and imprint process can operate in vacuum or the general atmosphere.Then hardened material layer 420 makes its moulding.After removing mould 430, material layer 420 its bossings of moulding will can not be back to sunk part.For instance, when material layer 420 is hot mask material, above-mentioned forming step will heat up surpass material layer 420 glass transition temperature with liquefied material layer 420, make in its opening that is transferred to mould 430 432.Meet the pattern of mould 430 when material layer 420 after, can be cooled to be lower than material layer 420 glass transition temperature with curing material layer 420.In another embodiment, when material layer 420 was thermmohardening or UV cured material, material layer 420 at the beginning can be liquid state, exerted pressure to material layer 420 at mould 430, and material layer 420 will meet the pattern of mould 430.Then with thermmohardening, UV cured or above-mentioned combination and solidification material layer 420.Except said method, also can adopt other sclerosis and moulding process with patterned material layer.
As shown in figure 11, after removing mould 430, can keep patterned material layer 420A.In this embodiment, patterned material layer 420A contains the part surface 412 of opening 434 exposed portions serve substrates 410, particularly substrate 410.In subsequent technique such as etch process, patterned material layer 420A is with mask part substrate 410.On the part that substrate 410 exposes, can residual a spot of thin-material layers 420.
In Figure 12, on substrate 410, carry out etch process 440.In a particular embodiment, etch process puts on the part surface 412 that substrate 410 exposes.In this embodiment, etch process 440 is dry ecthing, the etching shape of its non-grade in etched effect may command substrate 410.Dry etching process can be plasma etch process, and its etching gas can be in other embodiments, and alkalescence or acidic etching solution can be SF 6, CF 4, Cl 2, or above-mentioned combination.In other embodiments, can adopt other dry etching processs known in the art, even the dry etching process of future development.In addition in another embodiment, can adopt the practice of dry ecthing collocation wet etching.Residue in the situation on the part substrate 410 that exposes etch process 440 removable these residual thin-material layers 420 in thin-material layers 420; Perhaps before etch process 440, can remove this residual thin-material layers 420 earlier, it removes method and can be dry ecthing such as reactive ion etching (RIE).
Etch process 440 can be transferred to substrate 410 with the pattern (or design) of patterned material layer 420A, and this pattern just in time predetermined pattern with aforementioned mould 430 is opposite.In a particular embodiment, etch process 440 formation openings 442 and column 443 promptly form texture surface 412A in the surface 412 of substrate 410.In certain embodiments, opening 442 is referred to as gap (gap) again.In this embodiment, opening 442 is defined between the column 443.In other embodiments, difform opening 442 and/or difform column 443 can be formed among the texture surface 412A.In addition, the shape of each opening 442 and/or each column 443 can be identical or different.As shown in figure 13, then remove patterned material layer 420A as divesting method with suitable technology.In this embodiment, the solution that removes of patterned material layer 420A can be sulfuric acid and hydrogen peroxide solution.In other embodiments, can be known in the art the solution of solution or future development in order to the solution that removes patterned material layer 420A.
Figure 14 A-Figure 14 D is in the various embodiments, the perspective view of the photovoltaic element 400 of Figure 13.In this embodiment shown in Figure 13, the opening 442 in substrate 410 its surfaces allows texture structure 412A have periodic structure, like optical grating construction.Periodic structure can be multiple design.For instance, photovoltaic element 400 can have the periodic structure 400A of multiple periodic structure shown in Figure 14 A-Figure 14 D, periodic structure 400B, periodic structure 400C, periodic structure 400D, above-mentioned variation or above-mentioned combination. Periodic structure 400A, 400B, 400C, and 400D contain opening (gap) 442 and column (ridge) 443 separately.Periodic structure 400A has the opening (gap) 442 and column (ridge) 443 that cycle staggering is arranged.Periodic structure 400B has column (ridge) 443 arrangements interlaced with each other of different size, and opening (gap) 442 is formed between the column 443.Periodic structure 400C has the opening (gap) 442 and column (ridge) 443 that cycle staggering is arranged, but the size of its opening (gap) 442 and column (ridge) 443 all is different from the opening (gap) 442 and column (ridge) 443 of periodic structure 400A.Periodic structure 400D has the opening (gap) 442 and column (ridge) 443 that cycle staggering is arranged, but the column of each row (ridge) 443 is complementary with the figure of the column (ridge) 443 of adjacent columns.
The spacing of periodic structure and pattern dimension depend on the maximum absorption wavelength of photovoltaic element 400, can accomplish through the patterning of designing mould.In this embodiment, spacing between about 0.8 μ m, is 1: 1 and distribute than (duty ratio) between about 0.4 μ m.With the thin-film solar cells is example, and spacing is between about 0.2 μ m to 1 μ m.The periodic structure of photovoltaic cell can increase light and fall into effect, and then increases the electron-hole pair of optical path length and photovoltaic element generation.Compare with existing photovoltaic element, the texture surface of the photovoltaic element that forms with above-mentioned disclosed nano-imprint lithography technology and dry etching process can further improve the light transfer ratio and the sunken effect of light of photovoltaic element 400.In addition as stated, because the predetermined pattern of mould 430 can be controlled the distribution and the size of pattern easily, nano-imprint lithography technology can precisely be controlled the pattern of texture surface 412A.
Foregoing is the texturing technology on photovoltaic cell surface openly.When texturing process using nano-imprint lithography technology, can improve the textured surfaces on photovoltaic element surface, and further increase the light transfer ratio of photovoltaic element.For instance, the textured surfaces after the design can increase the sunken effect of light and prolong optical path length.Textured surfaces after the design also can form optical grating construction to be applied in the photovoltaic cell.Its texturing technology of above-mentioned disclosed photovoltaic cell also can reduce cost and increase productive rate.For instance, adopt the texture technology of nano-imprint lithography technology not need consuming time and expensive light lithography (photolithography) technology.Thus, make photovoltaic cell with nano-imprint lithography technology and can reach the effect of lithography process, but avoided the shortcoming of lithography process.Be understandable that above-mentioned different embodiment have different advantages, must do not have certain certain benefits to be present among arbitrary embodiment.
Though the present invention with a plurality of preferred embodiments openly as above; Right its is not in order to limit the present invention; Any those of ordinary skills; Do not breaking away from the spirit and scope of the present invention; When can changing arbitrarily and retouching, so protection scope of the present invention is as the criterion when looking appended the scope that claim defined.

Claims (10)

1. the manufacturing approach of a photovoltaic cell comprises:
One photovoltaic cell substrate is provided;
Carry out a nano-imprint lithography technology, exposing the part surface of this photovoltaic cell substrate, and
Carry out an etch process on the part surface that this photovoltaic cell substrate exposes.
2. the manufacturing approach of photovoltaic cell according to claim 1, the step of wherein carrying out this nano-imprint lithography technology comprises:
Form a mask layer on this photovoltaic cell substrate;
One mould is provided, and this mould has a predetermined pattern; And
This predetermined pattern of this mould is transferred to this mask layer, and forms one and be opened in this mask layer with this photovoltaic cell substrate of exposed portions serve.
3. the manufacturing approach of photovoltaic cell according to claim 1, wherein this etching step comprises a wet etching process and/or a dry etching process.
4. the manufacturing approach of photovoltaic cell according to claim 1, wherein this texture step does not comprise a lithography process.
5. the manufacturing approach of a photovoltaic cell comprises:
One photovoltaic cell substrate is provided;
Form a mask layer on this photovoltaic cell substrate;
Exert pressure to this mask layer with a mould, to form a patterned mask layer, wherein this mould has a layout structure, and this patterned mask layer has thickness contrast;
Remove this mould from this patterned mask layer; And
Make mask with this patterned mask layer, this photovoltaic cell substrate of etching is to form a textured surfaces in this photovoltaic cell substrate.
6. the manufacturing approach of photovoltaic cell according to claim 5, wherein this layout structure comprises an optical grating construction, and this textured surfaces in this photovoltaic cell substrate comprises an optical grating construction.
7. the manufacturing approach of photovoltaic cell according to claim 5, wherein this layout structure comprises one-period property structure, and this periodic structure is one-period property column structure, one-period property interstitial structure or one-period property column and interstitial structure.
8. the manufacturing approach of photovoltaic cell according to claim 5, wherein the step of this photovoltaic cell substrate of etching comprises a wet etching process and/or a dry etching process.
9. the manufacturing approach of a photovoltaic cell comprises:
One solar cell substrate is provided;
Form a mask layer on this solar cell substrate;
One mould is provided, and this mould has a predetermined pattern structure;
This this mask layer of predetermined pattern structure impression with this mould;
This predetermined pattern structure is transferred to this solar cell substrate from this mask layer, to form a plurality of grooves in this solar cell substrate; And
On this solar cell substrate, remove this mask layer afterwards.
10. the manufacturing approach of photovoltaic cell according to claim 9, wherein this predetermined pattern structure comprises the predetermined distribution of a plurality of holes.
CN2010106027851A 2010-07-23 2010-12-21 Photovoltaic cell manufacture method Pending CN102347395A (en)

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