CN102347585A - One-way traveling wave annular cavity single-frequency quasi-three-level solid laser - Google Patents

One-way traveling wave annular cavity single-frequency quasi-three-level solid laser Download PDF

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CN102347585A
CN102347585A CN 201110326701 CN201110326701A CN102347585A CN 102347585 A CN102347585 A CN 102347585A CN 201110326701 CN201110326701 CN 201110326701 CN 201110326701 A CN201110326701 A CN 201110326701A CN 102347585 A CN102347585 A CN 102347585A
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laser
crystal
optical surface
thermal bonding
chamber
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CN102347585B (en
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巩轲
吴克瑛
何淑芳
霍玉晶
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Tsinghua University
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Tsinghua University
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Abstract

The invention discloses a one-way traveling wave annular cavity single-frequency quasi-three-level solid laser. The transmission length of an incident light beam corresponding to reflection in an active ion-doped crystal is smaller than the transmission length of a reflecting light beam in the active ion-doped crystal by using a thermal bonding laser crystal as a laser reflecting element in a cavity and selecting the position of the thermal bonding surface. The one-way traveling wave annular cavity single-frequency quasi-three-level solid laser can reduce the reabsorption loss experienced by laser on an unpumped transmission path when one-way pumping is adopted, thereby ensuring the compactness and stability of the laser, reducing the cost and complexity of the system and effectively improving the laser output performance during one-way pumping. The high linear polarization degree can be obtained in a resonant cavity further by selecting a simple and compact laser structure and the position of the thermal bonding surface so as to be beneficial to efficiently carrying out intracavity frequency doubling.

Description

A kind of unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser
Technical field
The present invention relates to laser technology field, relate in particular to a kind of unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser.
Background technology
Numerous important application occasions need adopt high performance single-frequency quasi-three-level laser.For example, be used for most laser lines etc. of gain medium that cavity external frequency multiplication produces 946 required nanometer fundamental frequency light of high stable single-frequency 473 nano blue lights (adopting the Nd:YAG crystal as gain medium), is used for 2.01 microns laser (adopting the Tm:YAG crystal as gain medium) and the doping Yb of coherent Doppler radar and high-resolution spectro scopy.
In order to realize the efficient stable running of this type single-frequency quasi-three-level solid state laser, generally through selecting or design suitable laserresonator, make laser in resonant cavity can along clockwise light path or counterclockwise light path go in ring and propagate; And, make laser in resonant cavity, only realize unidirectional single-frequency propagation around clockwise along a certain further through in resonant cavity, introducing to around the responsive loss mechanism of clockwise.
The Kane of the U.S. in 1985 etc. has invented monoblock and non-planar unidirectional traveling wave annular chamber single-frequency solid laser device; The resonant cavity of this kind laser only is made up of a Nd:YAG crystal; Magnetic field is applied on the Nd:YAG laser medium, can obtain the stable single-frequency output of higher-wattage.Calendar year 2001; Wu Keying etc. have invented single-frequency solid laser device with pyramid prism and non-planar unidirectional travelling wave ring cavity; Utilize prism of corner cube and Nd:YAG crystal to constitute laserresonator, magnetic field is applied on the Nd:YAG laser medium, has successfully realized the 1064 nanometer single-frequency operations of 1W.
In order to adopt minimum element looping chamber as far as possible; Improve the stability of single-frequency laser; Some external optical surface of the gain medium of above laser all have reflex (and the incidence angle of this reflection is not equal to zero) to endovenous laser, and are used for the closure of endovenous laser light path.When the above laser of design is used for the quasi-three-level laser operation; In order to overcome the intrinsic problem of absorption loss again of quasi-three-level system; Usually adopt the mode of thermal bonding; The crystal of doping active ions and the crystal bonding of the active ions that do not mix are become integral body together; And select the position on thermal bonding surface, make in the crystal of doping active ions to equate with corresponding incident beam of reflection and the spread length of folded light beam in the crystal of doping active ions.At this moment; If adopt the multichannel pumping source simultaneously when two propagation paths carry out two-way pumping to gain media; Though can overcome the problem of absorption loss again on two paths with equal spread length, the use of multichannel pumping source has increased the cost of system and has been unfavorable for the steady running of single frequency laser when carrying out two-way pumping; Simultaneously double-colored beam splitter separates pumping laser and single-frequency is exported laser because the pumping direction of the outbound course of laser and one tunnel pumping source wherein near overlapping, also must additionally be inserted, and this has further increased the cost and the complexity of system.Therefore; For the compactness that guarantees laser with stable; Reduce system cost and complexity simultaneously; Can select to adopt the single channel pumping source only to carry out unidirectional pumping along the some paths in two propagation paths; But another that does not add pumping this moment has on the path of equal spread length and exists significantly absorption loss again, will cause the output performance of laser to have a strong impact on.
Summary of the invention
To the problems referred to above that exist in the prior art; The invention provides a kind of unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser; Can reduce when adopting unidirectional pumping, not add the absorption loss again of laser experience on the propagation path of pumping; Thereby guarantee the compactness of laser, stable and reduce system cost and complexity in, the laser output performance when effectively improving unidirectional pumping.
Unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser provided by the invention; Its working-laser material is the thermal bonding laser crystal; The thermal bonding laser crystal is formed through thermal bonding by the crystal of optically isotropic doping active ions and the crystal of the optically isotropic active ions that do not mix, and the crystal of doping active ions is identical with the host crystal of the crystal of the active ions that do not mix; Thermal bonding surface between the crystal of the crystal of doping active ions and the active ions that do not mix is an internal optics surface of this thermal bonding laser crystal; In all external optical surface of thermal bonding laser crystal, have only an optical surface to be used for oscillating laser coupling output in input of pumping laser and the chamber simultaneously; The polarization that is coated with oscillating laser in anti-reflection film and the chamber of pumping laser on the described optical surface that is used for oscillating laser coupling output in pumping laser input and the chamber is simultaneously exported film, and the pip on this optical surface is on the external optical surface of crystal of described doping active ions; After the laser of propagating in the chamber passes the crystal that the thermal bonding surface enters into the doping active ions; The experience incidence angle is less than the reflection of the cirtical angle of total reflection on the described optical surface that is used for oscillating laser coupling output in pumping laser input and the chamber simultaneously, and this reflection is divided into incident beam and folded light beam with the laser beam in the crystal of doping active ions; The direction of propagation of the pumping laser that send in the semiconductor laser pumping source behind the crystal of these reflection position entering doping active ions is identical with the direction of propagation of described folded light beam; Select the position on described thermal bonding surface, make the spread length of described incident beam in the crystal of doping active ions less than the spread length of described folded light beam in the crystal of doping active ions.Further, utilize described thermal bonding laser crystal to cooperate externally-applied magnetic field that nonreciprocal Faraday magneto-optical turning effort directly is provided, perhaps utilize other elements to cooperate externally-applied magnetic field that nonreciprocal Faraday magneto-optical turning effort is provided; With the direct looping resonant cavity of thermal bonding laser crystal self, perhaps with thermal bonding laser crystal and the common looping resonant cavity of other optical elements.
With described based on etc. the existing unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser of spread length bonding mode compare; When using identical pumping source only the maximum gain direction in the closed light path carried out the equal in length of the crystal of doping active ions on unidirectional pumping and the pumping direction in the chamber; Unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser provided by the invention; The oblique efficient of power output of lower laser threshold and Geng Gao can be obtained, therefore higher single-frequency laser power output can be obtained.Absorption loss again through laser experience on the propagation path that further reduces not add pumping; Unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser provided by the present invention suitable output performance when only adopting the pumping source of equal-wattage both can obtain with two-way pumping; Thereby reduce extra pumping system (pumping source and corresponding coupling optical system) and double-colored beam splitter (being used to separate pumping laser and single-frequency output laser); The cost of reduction system and complexity, and make laser more compact and stable.In addition; On the basis that guarantees above advantage; Laser structure and the thermal bonding surperficial position of the present invention through selecting compact; Can obtain higher linear polarization degree in intra; This helps adopting the frequency-doubling crystal that carries out the angle cutting according to first kind phase matched mode to carry out intracavity frequency doubling efficiently on the one hand, can reduce the adverse effect of the birefringence of frequency-doubling crystal to oscillating laser polarization state in the chamber on the other hand effectively.
Description of drawings
Come the present invention is done further explain below in conjunction with accompanying drawing, wherein:
Fig. 1 is the monoblock and non-planar unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser sketch map that is beneficial to the unidirectional pumping of semiconductor laser;
Fig. 2 is the prism of corner cube on-plane surface unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser sketch map that is beneficial to the unidirectional pumping of semiconductor laser;
Fig. 3 is the prism of corner cube on-plane surface unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser sketch map that is beneficial to unidirectional pumping of semiconductor laser and intracavity frequency doubling;
Fig. 4 is the prism of corner cube on-plane surface unidirectional traveling wave annular chamber single-frequency quasi-three-level solid frequency double laser sketch map that is beneficial to the unidirectional pumping of semiconductor laser.
Embodiment
Embodiment 1
In the embodiment shown in fig. 1, loop laser resonance cavity directly is made up of thermal bonding laser crystal 8.Externally-applied magnetic field H is applied on the thermal bonding laser crystal 8 along direction shown in Figure 1, utilize semiconductor laser pumping source 10 along direction shown in Figure 1 through pip 7 end-pumping thermal bonding laser crystals 8, can obtain single-frequency lasers output 9 at pip 7.
As shown in Figure 1; Thermal bonding laser crystal 8 is formed through thermal bonding at interface 3 places of the two by the crystal 1 of optically isotropic doping active ions and the crystal 2 of the optically isotropic active ions that do not mix; The crystal 1 of doping active ions is identical with the host crystal of the crystal 2 of the active ions that do not mix; And this host crystal has the Faraday magneto-optical characteristic YAG crystal of host crystal (for example, as).The crystal 1 of doping active ions is the thermal bonding surface with the interface 3 of the crystal 2 of the active ions that do not mix, and is an internal optics surface of thermal bonding laser crystal 8.The crystal 1 of doping active ions is the quasi-three-level laser working medium, and the concrete chemical formula of crystal is by the operation wavelength decision of single-frequency quasi-three-level laser required in the practical application.For example, the Nd:YAG crystal can be selected, Tm:YAG crystal etc. can be selected for producing 2.01 microns laser of single-frequency for producing single-frequency 946 nanometer lasers.
Thermal bonding laser crystal 8 can have a plurality of external optical surface, but being actually used in endovenous laser reflected outside optics surface has only four, corresponds respectively to the optical surface at pip 4,5,6,7 places.These four optical surfaces; Both maybe be fully constitute by the external optical surface of the crystal 1 of doping active ions; Also maybe be fully constitute, also possibly constitute jointly by the external optical surface of the crystal 1 of doping active ions external optical surface with the crystal 2 of the active ions that do not mix by the external optical surface of the crystal 2 of the active ions that do not mix.For example, the external optical surface that is used for oscillating laser coupling output in input of pumping laser and the chamber among Fig. 1 thermal bonding laser crystal 8 time is that external optical surface by the crystal 2 of the external optical surface of the crystal 1 of doping active ions and the active ions that do not mix constitutes jointly.Therefore, be in the pip 7 in the external optical surface of thermal bonding laser crystal 8, also be in the external optical surface of crystal 1 of doping active ions, but be not in the external optical surface of crystal 2 of the active ions that do not mix; In like manner, pip 4,5,6 all is in the external optical surface of thermal bonding laser crystal 8, also all is in the external optical surface of crystal 2 of the active ions that do not mix, but is not in the external optical surface of crystal 1 of doping active ions.
Oscillating laser passes through the reflection of pip 4,5,6,7 successively, and the edge is clockwise around the direction one way propagation in the chamber.Wherein, pip 4 lays respectively on two sides of thermal bonding laser crystal 8 with pip 6; Pip 5 is positioned on the end face of thermal bonding laser crystal 8; Endovenous laser equal experiences total internal reflection on 4,5,6 three of pips, thus, these experience the phase shift between the polarized component of introducing by total internal reflection on being all-trans exit point successively; Pip 7 is positioned at the output end face of thermal bonding laser crystal 8, is used for the end-pumping in single-frequency laser coupling output and semiconductor laser pumping source 10 simultaneously; On pip 7 residing optical surfaces, be coated with the polarization output film of oscillating laser in anti-reflection film and the chamber of pumping laser, this polarization output film is not equal to the reflectivity of p polarized component to the reflectivity of the s polarized component of oscillating laser; In this annular light path, pip 5 is not arranged in by 4,6,7 three definite planes of pip.For the ease of optics processing and design, doped crystal can be designed as vertical with the plane of folded light beam formation with the incident beam of pip 7 with the interface 3 of doped crystal not.
Doped crystal is a smooth surface with the interface 3 of doped crystal not, helps in high quality the crystal 1 of doping active ions and the crystal 2 hot key of the active ions that do not mix being integrated.Select and the position of design interface 3 length that length that the linear light path (along the incident beam direction of propagation of pip 7) by pip 6 and pip 7 decisions passes through is passed through in the crystal 1 of doping active ions less than the linear light path (along the folded light beam direction of propagation of pip 7) by pip 7 and pip 4 decisions in the crystal 1 of doping active ions.Further select the pumping direction in semiconductor laser pumping source 10, make the pumping laser-transmitting in the crystal 1 of doping active ions, and make transmission direction along the line direction (along the folded light beam direction of propagation of pip 7) of pip 7 with pip 4.Can obtain single-frequency laser output 9 at pip 7 at last.
Crystal 1 through making the doping active ions has the gain medium structure of above-mentioned spread length such as non-to the incident beam of its inside and folded light beam; Not only can make among Fig. 1 and amplify along the effective gain of light path acquisition of propagating along purport pin direction; And the absorption loss again that in the crystal 1 of doping active ions, experiences of the incident beam that can reduce pip 7, help improving the output performance of laser.Through the position of further control interface 3, can select the ratio of two spread lengths, the absorption loss again that the incident beam of pip 7 is experienced in the crystal 1 of doping active ions further reduces.For example, the spread length of incident beam in the crystal 1 of doping active ions that can make pip 7 is less than 1/5 of the spread length of folded light beam in the crystal 1 of doping active ions of pip 7.Thereby need not to adopt pumping source to carry out pumping along the opposite direction of the incident beam direction of pip 7; Required extra pumping system (pumping source and corresponding coupling optical system) and double-colored beam splitter (being used to separate pumping laser and single-frequency output laser) when having reduced two-way pumping; Make laser more compact and stable, and reduced the cost and the complexity of system significantly.
Element among Fig. 1 and light path configuration have determined laser in the chamber, to need along loop propagation clockwise.But; For more general situation; The confirming around the concrete of direction (clockwise or counterclockwise) of endovenous laser in the present embodiment needs to guarantee along the spread length of laser in the crystal 1 of folded light beam at the doping active ions after pip 7 reflections that should propagate around direction greater than the spread length in the crystal 1 of incident beam at the doping active ions.On this basis; Positive and negative according to the actual Faraday magneto-optical coefficient of the host crystal that constitutes the thermal bonding laser crystal; Magnetic field H also possibly got negative value (promptly along the opposite direction of H direction shown in the figure), but finally needs to guarantee that oscillating laser can be along fixed around the direction one way propagation in the chamber.
Embodiment 2
In the embodiment shown in Figure 2, ring resonator is made up of prism of corner cube 21 and 22 two optical elements of thermal bonding laser crystal.Prism of corner cube is to have the optical element that makes its outgoing beam direction and parallel this characteristic of its incident beam direction, and prism of corner cube is made by the optical medium with Faraday magneto-optical characteristic (for example, fused silica glass).Externally-applied magnetic field H is applied on the prism of corner cube 21 along direction shown in Figure 2.Externally-applied magnetic field is applied on the prism of corner cube 21, not only can also helps the fixed installation of magnet, for example can directly prism of corner cube 21 be put into the ring of annular magnet selecting aspect the magneto-optic memory technique the bigger degree of freedom to be provided.Utilize semiconductor laser pumping source 20 along direction shown in Figure 2 through pip 17 end-pumping thermal bonding laser crystals 22, can obtain single-frequency lasers output 19 at pip 17.
Like Fig. 2; Thermal bonding laser crystal 22 is formed through thermal bonding at interface 13 places of the two by the crystal 11 of optically isotropic doping active ions and the crystal 12 of the optically isotropic active ions that do not mix, and the crystal 11 of doping active ions is identical with the host crystal of the crystal 12 of the active ions that do not mix.The crystal 11 of doping active ions is the thermal bonding surface with the interface 13 of the crystal 12 of the active ions that do not mix, and is an internal optics surface of thermal bonding laser crystal 22.The crystal 11 of doping active ions is the quasi-three-level operation material, and the concrete chemical formula of crystal is by the operation wavelength decision of single-frequency quasi-three-level laser required in the practical application.For example, the Nd:YAG crystal can be selected, Tm:YAG crystal etc. can be selected for producing 2.01 microns laser of single-frequency for producing single-frequency 946 nanometer lasers.
Thermal bonding laser crystal 22 can have a plurality of external optical surface, but being actually used in endovenous laser reflected outside optics surface has only two, corresponds respectively to the optical surface at pip 17 and pip 18 places.These two optical surfaces are vertical each other, and all the oscillating laser light beams in the thermal bonding laser crystal all be in the simultaneously vertical plane of these two optical surfaces in.For the ease of optics processing and design, doped crystal and the interface 13 of doped crystal not can be designed as with the thermal bonding laser crystal in all residing planes of oscillating laser light beam vertical.
Described these two orthogonal reflective optical surfaces; Both maybe be fully constitute by the external optical surface of the crystal 11 of doping active ions; Also maybe be fully constitute, also possibly constitute jointly by the external optical surface of the crystal 11 of doping active ions external optical surface with the crystal 12 of the active ions that do not mix by the external optical surface of the crystal 12 of the active ions that do not mix.For example, the external optical surface that is used for oscillating laser coupling output in input of pumping laser and the chamber among Fig. 2 thermal bonding laser crystal 22 time is that external optical surface by the crystal 12 of the external optical surface of the crystal 11 of doping active ions and the active ions that do not mix constitutes jointly.Therefore, pip 17 both had been in the external optical surface of thermal bonding laser crystal 22, also was in the external optical surface of crystal 11 of doping active ions, but was not in the external optical surface of crystal 12 of the active ions that do not mix; In like manner, be in the pip 18 in the external optical surface of thermal bonding laser crystal 22, also be in the external optical surface of crystal 11 of doping active ions, but be not in the external optical surface of crystal 12 of the active ions that do not mix.
Oscillating laser passes through the reflection of pip 14,15,16,17,18 successively, and the edge is clockwise around the direction one way propagation in the chamber.Wherein, pip 14,15,16 lays respectively on three right angle reflectings surface of prism of corner cube 21; Pip 17,18 lays respectively on two right angle reflectings surface of thermal bonding laser crystal 22; Endovenous laser is equal experiences total internal reflection on pip 14,15,16,18, thereby on these are all-trans exit point, experiences the phase shift between the polarized component of being introduced by total internal reflection successively; Pip 17 is used for the end-pumping in single-frequency laser coupling output and semiconductor laser pumping source 20 simultaneously; On pip 17 residing optical surfaces, be coated with the polarization output film of oscillating laser in anti-reflection film and the chamber of pumping laser, this polarization output film is not equal to the reflectivity of p polarized component to the reflectivity of the s polarized component of oscillating laser; In this annular light path, pip 15 is not in the plane of incident beam with the folded light beam decision of pip 16 of pip 14.
Doped crystal is a smooth flat with the interface 13 of doped crystal not, helps in high quality crystal 12 hot keys of the crystal 11 of doping active ions and the active ions that do not mix are integrated.Select and design the position of interface 13; Pip 18 and pip 17 all are positioned on the external optical surface of crystal 11 of doping active ions, and the length in the crystal 11 of doping active ions, passed through less than the folded light beam of pip 17 of the length that the incident beam of pip 17 is passed through in the crystal 11 of doping active ions.Further select the pumping direction in semiconductor laser pumping source 20, make the pumping laser-transmitting in the crystal 11 of doping active ions, and make the folded light beam direction of propagation of transmission direction along pip 17.Can obtain single-frequency laser output 19 at pip 17 at last.
Crystal 11 through making the doping active ions has the gain medium structure of above-mentioned spread length such as non-to the incident beam of its inside and folded light beam; Not only can make among Fig. 2 and amplify along the effective gain of light path acquisition of propagating along purport pin direction; And the absorption loss again that in the crystal 11 of doping active ions, experiences of the incident beam that can reduce pip 17, help improving the output performance of laser.Through the position of further control interface 13, can select the ratio of two spread lengths, the absorption loss again that the incident beam of pip 17 is experienced in the crystal 11 of doping active ions further reduces.For example, the spread length of incident beam in the crystal 11 of doping active ions that can make pip 17 is less than 1/5 of the spread length of folded light beam in the crystal 11 of doping active ions of pip 17.Thereby need not to adopt pumping source to carry out pumping along the opposite direction of the incident beam direction of pip 17; Required extra pumping system (pumping source and corresponding coupling optical system) and double-colored beam splitter (being used to separate pumping laser and single-frequency output laser) when having reduced two-way pumping; Make laser more compact and stable, and reduced the cost and the complexity of system significantly.In addition; Through changing the position of pip 17 on the described optical surface that is used for the crystal 11 of the doping active ions of oscillating laser coupling output in input of pumping laser and the chamber simultaneously; Can also (for example confirm in the position of interface 13; After thermal bonding laser crystal 22 has machined) situation under; Regulate the ratio of described two spread lengths with further facilitating, thereby help further reducing the absorption loss again that the incident beam of pip 17 experiences in the crystal 11 of doping active ions.
Embodiment 3
In the embodiment shown in fig. 3, ring resonator is made up of prism of corner cube 21 and 23 two optical elements of thermal bonding laser crystal.Prism of corner cube is to have the optical element that makes its outgoing beam direction and parallel this characteristic of its incident beam direction, and prism of corner cube is made by the optical medium with Faraday magneto-optical characteristic (for example, fused silica glass).。Externally-applied magnetic field H is applied on the prism of corner cube 21 along direction shown in Figure 3.Externally-applied magnetic field is applied on the prism of corner cube 21, not only can also helps the fixed installation of magnet, for example can directly prism of corner cube 21 be put into the ring of annular magnet selecting aspect the magneto-optic memory technique the bigger degree of freedom to be provided.Utilize semiconductor laser pumping source 20 along direction shown in Figure 3 through pip 17 end-pumping thermal bonding laser crystals 23, can obtain single-frequency lasers output 19 at pip 17.
Like Fig. 3; Thermal bonding laser crystal 23 is formed through thermal bonding at interface 33 places of the two by the crystal 31 of optically isotropic doping active ions and the crystal 32 of the optically isotropic active ions that do not mix, and the crystal 31 of doping active ions is identical with the host crystal of the crystal 32 of the active ions that do not mix.The crystal 31 of doping active ions is the thermal bonding surface with the interface 33 of the crystal 32 of the active ions that do not mix, and is an internal optics surface of thermal bonding laser crystal 23.The crystal 31 of doping active ions is the quasi-three-level operation material, and the concrete chemical formula of crystal is by the operation wavelength decision of quasi-three-level single-frequency laser required in the practical application.For example, the Nd:YAG crystal can be selected, Tm:YAG crystal etc. can be selected for producing 2.01 microns laser of single-frequency for producing single-frequency 946 nanometer lasers.
Thermal bonding laser crystal 23 can have a plurality of external optical surface, but being actually used in endovenous laser reflected outside optics surface has only two, corresponds respectively to the optical surface at pip 17 and pip 18 places.These two optical surfaces are vertical each other, and all the oscillating laser light beams in the thermal bonding laser crystal all be in the simultaneously vertical plane of these two optical surfaces in.For the ease of optics processing and design, doped crystal and the interface 33 of doped crystal not can be designed as with the thermal bonding laser crystal in all residing planes of oscillating laser light beam vertical.
Described these two orthogonal reflective optical surfaces; Both maybe be fully constitute by the external optical surface of the crystal 31 of doping active ions; Also maybe be fully constitute, also possibly constitute jointly by the external optical surface of the crystal 31 of doping active ions external optical surface with the crystal 32 of the active ions that do not mix by the external optical surface of the crystal 32 of the active ions that do not mix.For example, the external optical surface that is used for oscillating laser coupling output in input of pumping laser and the chamber among Fig. 3 thermal bonding laser crystal 23 time is that external optical surface by the crystal 32 of the external optical surface of the crystal 31 of doping active ions and the active ions that do not mix constitutes jointly.Therefore, be in the pip 17 in the external optical surface of thermal bonding laser crystal 23, also be in the external optical surface of crystal 31 of doping active ions, but be not in the external optical surface of crystal 32 of the active ions that do not mix; In like manner, be in the pip 18 in the external optical surface of thermal bonding laser crystal 23, also be in the external optical surface of crystal 32 of the active ions that do not mix, but be not in the external optical surface of crystal 31 of doping active ions.
Oscillating laser passes through the reflection of pip 16,15,14,18,17 successively, and the edge is counterclockwise around the direction one way propagation in the chamber.Wherein, pip 16,15,14 lays respectively on three right angle reflectings surface of prism of corner cube 21; Pip 18,17 lays respectively on two right angle reflectings surface of thermal bonding laser crystal 23; Endovenous laser is equal experiences total internal reflection on pip 16,15,14,18, and on these are all-trans exit point, experiences the phase shift between the polarized component of being introduced by total internal reflection successively; Pip 17 is used for the end-pumping in single-frequency laser coupling output and semiconductor laser pumping source 20 simultaneously; On pip 17 residing optical surfaces, be coated with the polarization output film of oscillating laser in anti-reflection film and the chamber of pumping laser, this polarization output film is not equal to the reflectivity of p polarized component to the reflectivity of the s polarized component of oscillating laser; In this annular light path, pip 15 is not in the plane of folded light beam with the incident beam decision of pip 16 of pip 14.
Doped crystal is a smooth flat with the interface 33 of doped crystal not, helps in high quality crystal 32 hot keys of the crystal 31 of doping active ions and the active ions that do not mix are integrated.Select and design the position of interface 33; Pip 17 is positioned on the external optical surface of crystal 31 of doping active ions; And pip 18 is positioned on the external optical surface of crystal 32 of the active ions that do not mix, and the length in the crystal 31 of doping active ions, passed through less than the folded light beam of pip 17 of the length that the incident beam of pip 17 is passed through in the crystal 31 of doping active ions.Further select the pumping direction in semiconductor laser pumping source 20, make the pumping laser-transmitting in the crystal 31 of doping active ions, and make the folded light beam direction of propagation of transmission direction along pip 17.Can obtain single-frequency laser output 19 at pip 17 at last.
Crystal 31 through making the doping active ions has the gain medium structure of above-mentioned spread length such as non-to the incident beam of its inside and folded light beam; Not only can make the light path of propagating in the counterclockwise direction among Fig. 3 obtain effectively gain amplifies; And the absorption loss again that in the crystal 31 of doping active ions, experiences of the incident beam that can reduce pip 17, help improving the output performance of laser.Through the position of further control interface 33, can select the ratio of two spread lengths, the absorption loss again that the incident beam of pip 17 is experienced in the crystal 31 of doping active ions further reduces.For example, the spread length of incident beam in the crystal 31 of doping active ions that can make pip 17 is less than 1/5 of the spread length of folded light beam in the crystal 31 of doping active ions of pip 17.Thereby need not to adopt pumping source to carry out pumping along the opposite direction of the incident beam direction of pip 17; Required extra pumping system (pumping source and corresponding coupling optical system) and double-colored beam splitter (being used to separate pumping laser and single-frequency output laser) when having reduced two-way pumping; Make laser more compact and stable, and reduced the cost and the complexity of system significantly.In addition; Through changing the position of pip 17 on the described optical surface that is used for the crystal 31 of the doping active ions of oscillating laser coupling output in input of pumping laser and the chamber simultaneously; Can also (for example confirm in the position of interface 33; After thermal bonding laser crystal 23 has machined) situation under; Regulate the ratio of described two spread lengths with further facilitating, thereby help further reducing the absorption loss again that the incident beam of pip 17 experiences in the crystal 31 of doping active ions.
The unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser that is proposed for embodiment 2 and embodiment 3; Remove and be used for closed five of endovenous laser beyond the reflecting surface, other only are used for all need being coated with on the logical optical surface in outsides of endovenous laser transmission the anti-reflective film of oscillating laser; And further select these orientation that only is used for the logical optical surface of transmission, to guarantee the direction of propagation that transmission gets into the laser beam before the thermal bonding laser crystal and to transmit thermal bonding laser crystal and afterwards that the direction of propagation of the laser beam of entering angle cone prism is parallel.For simplicity, the logical optical surface that these only can be used for transmission is designed to vertical with the direction of propagation of its transmitted light beam, thereby can not change the direction of propagation of laser beam because of refraction.
For embodiment 2 and embodiment 3, according to element and the light path configuration in the accompanying drawing separately, drawn in embodiment shown in Figure 22 laser and in the chamber, propagated, and laser is propagated along loop counterclockwise in the chamber in embodiment shown in Figure 33 along loop clockwise.But; For more general situation; The confirming around the concrete of direction (clockwise or counterclockwise) of endovenous laser among embodiment 2 and the embodiment 3 needs to guarantee along folded light beam the spread length in the crystal of doping active ions of laser after pip 17 reflections that should propagate around direction greater than the spread length of incident beam in the crystal of doping active ions.On this basis; Positive and negative according to the actual Faraday magneto-optical coefficient of the optical medium that constitutes prism of corner cube; Magnetic field H also possibly got negative value (promptly along the opposite direction of H direction shown in the figure) separately, but finally needs to guarantee that oscillating laser can be along fixed around the direction one way propagation in the chamber.
Compare with embodiment 2, the laser structure among the embodiment 3 more helps between prism of corner cube and thermal bonding laser crystal, inserting non-linear frequency-doubling crystal and carries out intracavity frequency doubling efficiently.For embodiment 2 and embodiment 3; If when carrying out intracavity frequency doubling according to second type of phase matched mode; The birefringence meeting of non-linear frequency-doubling crystal is to introducing extra uncertain phase shift between two vertical polarization components (corresponding to the o light and the e light of second type of desired fundamental frequency light of phase matched) of endovenous laser; Need compensate the birefringence effect of himself this moment through frequency-doubling crystal being taked accurate temperature controlling, and this will increase the complexity and the cost of device.Therefore, be more suitable for adopting first kind phase matched mode to carry out intracavity frequency doubling.
In embodiment 3, like Fig. 3, the unidirectional traveling wave in the thermal bonding laser crystal through the total internal reflection of pip 18, passes through the reflection of pip 17 earlier afterwards; Owing to be coated with the polarization output film that the s polarized component reflectivity of oscillating laser is not equal to p polarized component reflectivity on the pip 17 residing optical surfaces, therefore can have higher linear polarization degree through pip 17 laser beams reflected; Further the reflectivity through suitably increasing oscillating laser s component with the gap of the reflectivity of p component (for example; Selecting the reflectivity of s component is 99.36%; Selecting the reflectivity of p component is 71.34%), can make polarization state approach linear polarization through pip 17 laser beams reflected.This has three remarkable advantages at least: the first, help adopting the non-linear frequency-doubling crystal that carries out the angle cutting according to first kind phase matched mode to carry out intracavity frequency doubling efficiently; The second, significantly reduced the adverse effect of the birefringence of frequency-doubling crystal, adopted extra temperature controlling instruments that frequency-doubling crystal is carried out accurate temperature controlling thereby removed to oscillating laser polarization state in the chamber; Three, overcome for the incident beam (Fig. 3) that makes pip 18 has a high linear polarization degree and need apply this shortcoming of extremely strong externally-applied magnetic field.
And in embodiment 2,, making it opposite with the former direction that applies if change the direction that applies magnetic field, endovenous laser then shown in Figure 2 will be along the counter clockwise direction one way propagation; At this moment; Though unidirectional traveling wave is also earlier by pip 18 reflections; Again by pip 17 reflections; And then can improve the linear polarization degree of the folded light beam of pip 17; But the laser outbound course of this moment will with the pumping direction of pumping source 20 among Fig. 2 near overlapping; Thereby must adopt extra double-colored beam splitter to separate pumping laser and single-frequency output laser, increase the cost and the complexity of system.Therefore, compare with embodiment 2, the laser structure among the embodiment 3 more helps between prism of corner cube and thermal bonding laser crystal, inserting non-linear frequency-doubling crystal and carries out intracavity frequency doubling efficiently, and structure is more simple and compact.
Embodiment 4
Embodiment shown in Figure 4 is on the basis of embodiment shown in Figure 3, between prism of corner cube 21 and thermal bonding laser crystal 23, inserts non-linear frequency-doubling crystal 41, and makes the pip 17 and the light path of pip 16 decisions directly pass non-linear frequency-doubling crystal 41.On the basis that each surface coating requires in keeping embodiment 3; Also require the non-total reflection surface of double-frequency laser process and the anti-reflection film that the transmission surface all is coated with double-frequency laser, and the logical optical surface of frequency-doubling crystal self is coated with the anti-reflection film of oscillating laser and double-frequency laser in the chamber.
Among Fig. 4; Owing to be coated with the polarization output film that the s polarized component reflectivity of oscillating laser is not equal to p polarized component reflectivity on the pip 17 residing optical surfaces; So counterclockwise light path in this annular chamber; After pip 17 reflections, in the crystal 31 of doping active ions, can have higher linear polarization degree.When this light beam further incides in the non-linear frequency-doubling crystal 41 that carries out the angle cutting according to first kind phase matched mode, help obtaining higher intracavity frequency doubling conversion efficiency.In addition, other advantages of embodiment 4 describe in detail in aforesaid embodiment 3 compares the advantage of embodiment 2.
Embodiment 5
Present embodiment is on the basis of embodiment 4, further between prism of corner cube 21 and thermal bonding laser crystal 23, inserts saturable absorber.The logical optical surface of saturable absorber self is coated with the anti-reflection film of oscillating laser and double-frequency laser in the chamber.This saturable absorption body member only is placed on the position that can be passed by the pip 14 and the light path of pip 18 decisions.Therefore, this saturable absorber and non-linear frequency-doubling crystal 41 are arranged in the two-way rectilinear light beam that staggers in the space respectively side by side.Owing to compare with Q switched element (like sound light modulator device and electrooptic modulator) in other chambeies; Saturable absorber can have less size; Therefore present embodiment can effectively shorten prism of corner cube 21 and 23 distances of drawing back of thermal bonding laser crystal; Thereby the chamber that effectively reduces resonant cavity is long, helps the stability of resonant cavity and the stability of single-frequency operation; Simultaneously the pulse drive manner thermal effect of crystal of active ions that can significantly reduce to mix reduces the thermally induced birefringence influence, more helps obtaining the pulse one-frequency or frequency-multiplying laser output of efficient stable.
Embodiment 6
Present embodiment is on the basis of embodiment 2 or embodiment 3, and Q switched element in the chamber (like acousto-optic modulator, electrooptic modulator or saturable absorber etc.) or non-linear frequency-doubling crystal are inserted on the light path between prism of corner cube and the thermal bonding laser crystal.The particular location of Q switched element or non-linear frequency-doubling crystal in this chamber both can be chosen on 16 positions of passing with the light path of pip 17 decisions that only are reflected a little, also can be chosen in only be reflected a little 14 and the position passed of the light path that determines of pip 18 on.Clear aperature like Q switched element in the fruit caving or non-linear frequency-doubling crystal is enough big, and also can placing it in can be reflected a little 16 passes, also can be reflected a little on the position that 14 light paths that determine with pip 18 pass with the light path of pip 17 decisions.
The above only is a preferred implementation of the present invention, but protection range of the present invention is not limited thereto.Any those skilled in the art all can carry out suitable change or variation to it in technical scope disclosed by the invention, and this change or variation all should be encompassed within protection scope of the present invention.

Claims (7)

1. unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser; It is characterized in that: working-laser material is the thermal bonding laser crystal; The thermal bonding laser crystal is formed through thermal bonding by the crystal of optically isotropic doping active ions and the crystal of the optically isotropic active ions that do not mix, and the crystal of doping active ions is identical with the host crystal of the crystal of the active ions that do not mix; Thermal bonding surface between the crystal of the crystal of doping active ions and the active ions that do not mix is an internal optics surface of this thermal bonding laser crystal; In all external optical surface of thermal bonding laser crystal, have only an optical surface to be used for oscillating laser coupling output in input of pumping laser and the chamber simultaneously; The polarization that is coated with oscillating laser in anti-reflection film and the chamber of pumping laser on the described optical surface that is used for oscillating laser coupling output in pumping laser input and the chamber is simultaneously exported film, and the pip on this optical surface is on the external optical surface of crystal of described doping active ions; After the laser of propagating in the chamber passes the crystal that the thermal bonding surface enters into the doping active ions; The experience incidence angle is less than the reflection of the cirtical angle of total reflection on the described optical surface that is used for oscillating laser coupling output in pumping laser input and the chamber simultaneously, and this reflection is divided into incident beam and folded light beam with the laser beam in the crystal of doping active ions; The direction of propagation of the pumping laser that send in the semiconductor laser pumping source behind the crystal of these reflection position entering doping active ions is identical with the direction of propagation of described folded light beam; Select the position on described thermal bonding surface, make the spread length of described incident beam in the crystal of doping active ions less than the spread length of described folded light beam in the crystal of doping active ions.
2. unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser as claimed in claim 1; It is characterized in that: in all external optical surface of described thermal bonding laser crystal, the optical surface that oscillating laser in the chamber is had reflex is respectively first optical surface, second optical surface, the 3rd optical surface and the 4th optical surface; All oscillating laser light beams in the chamber all are in the thermal bonding laser crystal, and order experiences the reflection of first optical surface, second optical surface, the 3rd optical surface and the 4th optical surface successively; Through the reflection of described four optical surfaces, make oscillating laser in the chamber, form closed circuit; First optical surface is the described optical surface that is used for oscillating laser coupling output in input of pumping laser and the chamber simultaneously; Pip on second optical surface, the 3rd optical surface and the 4th optical surface all is positioned on the external optical surface of crystal of the active ions that do not mix, and on second optical surface, the 3rd optical surface and the 4th optical surface equal experiences total internal reflection; Pip on the 3rd optical surface is not in the plane of the pip formation on first optical surface, second optical surface and the 4th optical surface; Externally-applied magnetic field is applied on the thermal bonding laser crystal; Select the direction of externally-applied magnetic field, make oscillating laser according to described reflection order in the chamber along annular one way propagation.
3. unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser as claimed in claim 1, it is characterized in that: resonant cavity is made up of described thermal bonding laser crystal and prism of corner cube; In all external optical surface of thermal bonding laser crystal, the optical surface that oscillating laser in the chamber is had reflex is respectively first optical surface and second optical surface; First optical surface is vertical with second optical surface, and all the oscillating laser light beams in the thermal bonding laser crystal all be in simultaneously with first optical surface plane vertical with second optical surface in; First optical surface is the described optical surface that is used for oscillating laser coupling output in input of pumping laser and the chamber simultaneously; Pip on second optical surface is positioned on the external optical surface of crystal of doping active ions, and oscillating laser experiences total internal reflection on second optical surface in the chamber; After the endovenous laser transmission gets into the thermal bonding laser crystal; After order experiences the reflection of first optical surface, second optical surface successively; Transmit the thermal bonding laser crystal, and the light beam that transmits is parallel with the direction of propagation that gets into thermal bonding laser crystal light beam before; This light beam that transmits incides in the prism of corner cube afterwards, and experiences total internal reflection on the first right angle reflecting surface, the second right angle reflecting surface and the 3rd right angle reflecting surface of prism of corner cube successively; Through the reflection of described five optical surfaces, make oscillating laser in the chamber, form closed circuit; In prism of corner cube, the pip on the second right angle reflecting surface is not in the plane of incident beam with the folded light beam formation of the 3rd right angle reflecting surface of the first right angle reflecting surface; Externally-applied magnetic field is applied on the prism of corner cube; Select the direction of externally-applied magnetic field, make oscillating laser according to described reflection order in the chamber along annular one way propagation.
4. unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser as claimed in claim 1, it is characterized in that: resonant cavity is made up of described thermal bonding laser crystal and prism of corner cube; In all external optical surface of thermal bonding laser crystal, the optical surface that oscillating laser in the chamber is had reflex is respectively first optical surface and second optical surface; First optical surface is vertical with second optical surface, and all the oscillating laser light beams in the thermal bonding laser crystal all be in simultaneously with first optical surface plane vertical with second optical surface in; Pip on first optical surface is positioned on the external optical surface of crystal of the active ions that do not mix, and oscillating laser experiences total internal reflection on first optical surface in the chamber; Second optical surface is the described optical surface that is used for oscillating laser coupling output in input of pumping laser and the chamber simultaneously; After the endovenous laser transmission gets into the thermal bonding laser crystal; After order experiences the reflection of first optical surface, second optical surface successively; Transmit the thermal bonding laser crystal, and the light beam that transmits is parallel with the direction of propagation that gets into thermal bonding laser crystal light beam before; This light beam that transmits incides in the prism of corner cube afterwards, and experiences total internal reflection on the first right angle reflecting surface, the second reflection right angle face and the 3rd right angle reflecting surface of prism of corner cube successively; Through the reflection of described five optical surfaces, make oscillating laser in the chamber, form closed circuit; In prism of corner cube, the pip on the second right angle reflecting surface is not in the plane of incident beam with the folded light beam formation of the 3rd right angle reflecting surface of the first right angle reflecting surface; Externally-applied magnetic field is applied on the prism of corner cube; Select the direction of externally-applied magnetic field, make oscillating laser according to described reflection order in the chamber along annular one way propagation.
5. unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser as claimed in claim 4 is characterized in that: between thermal bonding laser crystal and prism of corner cube, insert the non-linear frequency-doubling crystal that carries out the angle cutting according to first kind phase matched mode; Select the insertion position of non-linear frequency-doubling crystal, only make by transmiting the thermal bonding laser crystal and subsequently the laser beam of entering angle cone prism being propagated through this non-linear frequency-doubling crystal.
6. unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state laser as claimed in claim 5 is characterized in that: between thermal bonding laser crystal and prism of corner cube, insert saturable absorber; Select the insertion position of saturable absorber, only make to propagate and pass through this saturable absorber by the laser beam that transmits prism of corner cube and will get into the thermal bonding laser crystal subsequently.
7. like claim 3 or 4 described unidirectional traveling wave annular chamber single-frequency quasi-three-level solid state lasers; It is characterized in that: between thermal bonding laser crystal and prism of corner cube; Only insert Q switched element in the chamber; Perhaps only insert non-linear frequency-doubling crystal, perhaps insert Q switched element and non-linear frequency-doubling crystal in the chamber simultaneously.
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CN105071213A (en) * 2015-07-20 2015-11-18 中国科学院上海光学精密机械研究所 Single-frequency solid-state laser based on triangle cone reflector
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CN105244748A (en) * 2015-10-15 2016-01-13 哈尔滨工业大学 Cube-corner prism-based unidirectional traveling wave annular 2micron solid laser device
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CN108574196A (en) * 2018-03-20 2018-09-25 苏州十方生物科技有限公司 A method of optimization Quasi-three level solid state laser device transfer efficiency
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CN110244498B (en) * 2018-05-09 2022-04-22 中国科学院理化技术研究所 Nonlinear frequency conversion crystal
CN114696194A (en) * 2020-12-25 2022-07-01 中国科学院理化技术研究所 Insertable single-block non-planar ring cavity laser device
CN114696195B (en) * 2020-12-25 2023-11-14 中国科学院理化技术研究所 Pluggable monolithic annular cavity laser device
CN114696194B (en) * 2020-12-25 2023-11-14 中国科学院理化技术研究所 Pluggable monolithic non-planar annular cavity laser device

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