CN102380818A - Chemical mechanical grinding method and chemical mechanical grinding equipment - Google Patents
Chemical mechanical grinding method and chemical mechanical grinding equipment Download PDFInfo
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- CN102380818A CN102380818A CN2010102686154A CN201010268615A CN102380818A CN 102380818 A CN102380818 A CN 102380818A CN 2010102686154 A CN2010102686154 A CN 2010102686154A CN 201010268615 A CN201010268615 A CN 201010268615A CN 102380818 A CN102380818 A CN 102380818A
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Abstract
Embodiments of the invention disclose a chemical mechanical grinding method and chemical mechanical grinding equipment. The method comprises the steps of: arranging a film layer on the outer surface of a key part of the chemical mechanical grinding equipment; chemically and mechanically grinding a semiconductor chip by the chemical mechanical grinding equipment; and removing the film layer. In the technical scheme provided by the invention, the film layer is arranged on the outer surface of the key part of the chemical mechanical grinding equipment which is easily crystallized, the crystal generated by the volatilization of the sputtered grinding slurry can be adhered onto the film layer when the chemical mechanical grinding equipment is used for grinding at a high speed, and the crystal can be removed by changing the film layer without needing to stop grinding and spraying water, so that the production efficiency is improved. Meanwhile, the crystal which is hardly removed by the scheme in the prior art can be removed by changing the film layer which is arranged at the position which can not be sprayed by a water spray pipeline, so that the scratching to the semiconductor chip by the crystal can be reduced, and a grinding effect can be improved.
Description
Technical field:
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of chemical and mechanical grinding method and milling apparatus.
Background technology:
CMP (chemical mechanical polishing; Cmp) technology is ground two kinds of effects with the mechanical polishing of abrasive materials and the chemical formula of acid-base solution; Can make semiconductor wafer surface reach comprehensive smooth, be beneficial to the carrying out of subsequent technique.In the employed equipment of CMP processing procedure; Grinding head is used to semiconductor wafer is pressed on the grinding pad and drives semiconductor wafer rotation; Grinding pad is to rotate with the direction in the opposite direction of semiconductor wafer rotation; When grinding, grinding the slurry supply arm will be placed between semiconductor wafer and grinding pad by the slurry that grinds that abrasive grains constituted.
In the process of grinding at a high speed, grind slurry and be easy to be splashed to grinding head and grind on the equipment such as starching supply arm, after moisture evaporation falls; Grind slurry and can form crystallization attached on the CMP equipment; These crystallization meetings cause CMP equipment appearance not attractive in appearance, and are difficult to remove, and even more serious is; Also might drop on grinding pad, when causing grinding semiconductor wafer caused scratch.For this reason, solution of the prior art is following: on CMP equipment, water pipe is set, utilizes said water pipe to spray water in the CMP equipment surface that is easy to generate crystallization, keep equipment surface moistening, prevent to grind slurry volatilization crystallization.
Through the research to prior art, the inventor finds, has following defective in the existing technical scheme: if when grinding is carried out, spray water; Then can change the concentration of grinding slurry; Therefore the effect that influence is ground is merely able to water spray when not grinding, and must influence production efficiency like this.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of chemical and mechanical grinding method and milling apparatus, can enhance productivity.
For realizing above-mentioned purpose, the invention provides following technical scheme:
A kind of chemical and mechanical grinding method comprises:
Critical component outer surface at chemical-mechanical grinding device is provided with thin layer;
Adopt said chemical-mechanical grinding device that semiconductor wafer is carried out cmp;
Remove said thin layer.
Preferably, the said thin layer of said removal comprises:
When the crystallization content that exists on the said thin layer during, remove said thin layer greater than threshold values.
Preferably, the said thin layer of said removal comprises:
When the time used of said thin layer during, remove said thin layer greater than preset up time.
Preferably, the critical component of said chemical-mechanical grinding device comprises: the outer cover of grinding head, grinding head motor, grind in slurry supply arm and the grinding pad control arm one or more.
Preferably, said thin layer is a thermoplastic elastomer (TPE) rubber film layer.
Corresponding to above-mentioned chemical and mechanical grinding method, the present invention also provides a kind of chemical-mechanical grinding device, is used for grinding semiconductor chip:
The outer surface of the critical component of said chemical-mechanical grinding device is provided with thin layer.
Preferably, the critical component of said chemical-mechanical grinding device comprises: the outer cover of grinding head, grinding head motor, grind in slurry supply arm and the grinding pad control arm one or more.
Preferably, said thin layer is a thermoplastic elastomer (TPE) rubber film layer.
Preferably, said thin layer adopts viscose glue to be attached at the outer surface of said critical component.
Preferably, said thin layer has repellency and permeable gas property, and has anti acid alkali performance.
Use the technical scheme that the embodiment of the invention provided; Critical component outer surface at the chemical-mechanical grinding device that is easy to generate crystallization is provided with thin layer; In the process of grinding at a high speed, the crystallization of grinding slurry volatilization formation of sputter will be attached on the thin layer, through changing said thin layer; Need not to stop to grind water spray and can remove crystallization, enhance productivity.
Simultaneously, this scheme through change water pipe spray less than the thin layer that is provided with of position, can remove the crystallization of removing through the plan hard of prior art, reduce the scratch of crystallization to semiconductor wafer, improve grinding effect.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The schematic flow sheet of the chemical and mechanical grinding method that Fig. 1 provides for the embodiment of the invention;
The structural representation of the chemical mechanical polishing device that Fig. 2 provides for the embodiment of the invention.
The specific embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
For fear of in carrying out the CMP processing procedure, grind the slurry crystallization and cause semiconductor wafer is caused scratch, the available technology adopting water pipe is sprayed water in the CMP equipment surface that is easy to generate crystallization; Keep equipment surface moistening, prevent to grind the scheme of slurry volatilization crystallization, yet if this scheme when grinding is carried out, spray water; Then can change the concentration of grinding slurry; Therefore the effect that influence is ground is merely able to water spray when not grinding, and must influence production efficiency like this.
Simultaneously; Receive the influence of CMP equipment board position and angle; The water that water pipe sprays can only cover and grind slurry supply arm, grinding pad control arm etc. from the lower parts of grinding pad height; Then can't be sprayed onto for the higher grinding head in position and the outer cover of grinding head motor, the position that can't be ejected into still can produce crystallization, when causing grinding semiconductor wafer is caused scratch.
In order to address the above problem, the present invention provides a kind of CMP method and CMP equipment, and wherein, said CMP method comprises: the critical component outer surface at chemical-mechanical grinding device is provided with thin layer; Adopt said chemical-mechanical grinding device that semiconductor wafer is carried out cmp; Remove said thin layer.
Said CMP equipment comprises: the thin layer of outer surface that is arranged on the critical component of said chemical-mechanical grinding device.
Specify the specific embodiment of CMP method provided by the invention and CMP equipment below in conjunction with accompanying drawing.
Embodiment one:
The schematic flow sheet of the CMP method that Fig. 1 provides for the embodiment of the invention one.This method specifically can may further comprise the steps:
Step S101: the critical component outer surface at CMP equipment is provided with thin layer.
Wherein said key position is meant in the CMP processing procedure; Be easy to generate the surface of the CMP part of appliance that grinds the slurry crystallization; And water pipe parts that can't be ejected into etc., specifically can comprise: the outer cover of grinding head, grinding head motor, grind in the parts such as slurry supply arm and grinding pad control arm one or more.
Said thin layer need possess and have repellency and permeable gas property, because the Acidity of Aikalinity that grinds slurry is between PH 4～10, therefore said thin layer also will have anti acid alkali performance.Concrete said thin layer can be the thin layer of TPU (Thermoplastic polyurethanes, thermoplastic elastic body rubber) material.Said thin layer can also adopt viscose glue to be attached at the outer surface of said critical component, also can adopt spraying to wait other technologies to be formed at the outer surface of critical component.
Step S102: adopt said CMP equipment that semiconductor wafer is carried out CMP and grind.
Grinding head is pressed in semiconductor wafer on the grinding pad and drives semiconductor wafer presses rotation to move, and grinding pad can be moved with opposite direction rotation by the control of grinding pad control arm, also can under the drive of grinding head, move.The shower nozzle that grinds the slurry supply arm sprays by what abrasive grains and chemical substance were formed and grinds slurry, grinds to starch to be placed between semiconductor wafer and the grinding pad.Mechanical polishing through the abrasive grains material grinds two kinds of effects with the chemical formula that grinds the acid-base solution in the slurry, can make semiconductor wafer surface reach comprehensive planarization, in order to the carrying out of subsequent technique.
Step S103: remove said thin layer.
Concrete, the threshold values of crystallization content on the thin layer is set in advance, and detects the crystallization content on the thin layer in real time, when crystallization content reaches preset threshold values, remove said thin layer.
The up time of thin layer can also be set in advance, when the time used of thin layer reaches preset up time, remove said thin layer.
Thin layer with the TPU material is an example, remove said thin layer mode can for: directly uncover said thin layer, also can be through spraying the said thin layer of corresponding organic solvent dissolution.
Through removing said thin layer.Can remove the crystallization that slurry volatilization forms of grinding of sputter, the crystallization on grinding pad of reducing to drop, thus crystallization causes the probability of scratch to semiconductor wafer when reducing to grind.
After removing thin layer, as carrying out the chemical machinery grinding once more, can return and execution in step S101, at the outer surface of the critical component of said CMP equipment new thin layer is set.
The chemical and mechanical grinding method that present embodiment provides; CMP equipment surface being easy to generate crystallization is provided with thin layer, and in the process of grinding at a high speed, the crystallization of grinding slurry volatilization formation of sputter will be attached on the thin layer; When reaching the service time of threshold values that crystallization content on the thin layer is set in advance or preset thin layer; Through changing said thin layer, need not to stop to grind water spray and can remove crystallization, enhance productivity.
Simultaneously, water pipe spray less than the position be provided with thin layer, through changing thin layer, can remove the crystallization of removing through the plan hard of prior art, reduce the scratch of crystallization to semiconductor wafer, improve grinding effect.
Accordingly, the present invention also provides a kind of CMP equipment, specifies in following examples.
Embodiment two:
Present embodiment provides a kind of CMP equipment, is used for grinding semiconductor chip, and is as shown in Figure 2, is the structural representation of said CMP equipment.
As shown in the figure, the outer surface of the critical component of this CMP equipment is provided with thin layer 201.
Wherein said key position refers in the CMP processing procedure, be easy to generate the CMP equipment surface of grinding the slurry crystallization; And water pipe parts that can't be ejected into etc., specifically can be, grind in the parts such as slurry supply arm 204 and grinding pad control arm 205 one or more for: the outer cover 203 of grinding head 202, grinding head motor.
Said thin layer 201 need possess and have repellency and permeable gas property, because the Acidity of Aikalinity that grinds slurry is between PH 4～10, therefore said thin layer also will have anti acid alkali performance.Concrete said thin layer can be the thin layer of TPU (Thermoplastic polyurethanes, thermoplastic elastic body rubber) material.Said thin layer can also adopt viscose glue to be attached at the outer surface of said critical component.
In addition, said thin layer can be changed, and when the crystallization content that exists on the said thin layer during greater than threshold values, or the time used of thin layer can be removed said thin layer, and new thin layer is set when reaching preset up time.
The working method of this CMP equipment is following:
Grinding head 202 is pressed in semiconductor wafer 207 on the grinding pad 206 and drives semiconductor wafer presses rotation to move, and grinding pad 206 can be moved with opposite direction rotation by 205 controls of grinding pad control arm, also can under the drive of grinding head 202, move.The shower nozzle that grinds slurry supply arm 204 sprays by what abrasive grains and chemical substance were formed and grinds slurry, grinds to starch to be placed between semiconductor wafer 207 and the grinding pad 206.Mechanical polishing through the abrasive grains material grinds two kinds of effects with the chemical formula that grinds the acid-base solution in the slurry, can make semiconductor wafer surface reach comprehensive planarization, in order to the carrying out of subsequent technique.
The outer surface of the critical component that is easy to generate crystallization of the chemical-mechanical grinding device that present embodiment provides is provided with thin layer; In the process that this CMP equipment grinds at a high speed; The crystallization of grinding slurry volatilization formation of sputter will through changing thin layer, cause scratch to semiconductor wafer when having avoided crystallization to drop the grinding that on grinding pad, causes attached on the thin layer; Need not to stop to grind water spray and can remove crystallization, enhance productivity.
Simultaneously, in the CMP equipment water pipe spray less than the position also be provided with thin layer, through changing said thin layer, can remove the crystallization of removing through the plan hard of prior art, reduce the scratch of crystallization to semiconductor wafer, improve grinding effect.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to these embodiment shown in this paper, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (10)
1. a chemical and mechanical grinding method is characterized in that, comprising:
Critical component outer surface at chemical-mechanical grinding device is provided with thin layer;
Adopt said chemical-mechanical grinding device that semiconductor wafer is carried out cmp;
Remove said thin layer.
2. method according to claim 1 is characterized in that, the said thin layer of said removal comprises:
When the crystallization content that exists on the said thin layer during, remove said thin layer greater than threshold values.
3. method according to claim 1 is characterized in that, the said thin layer of said removal comprises:
When the time used of said thin layer during, remove said thin layer greater than preset up time.
4. method according to claim 1 is characterized in that, the critical component of said chemical-mechanical grinding device comprises: the outer cover of grinding head, grinding head motor, grind in slurry supply arm and the grinding pad control arm one or more.
5. method according to claim 1 is characterized in that, said thin layer is a thermoplastic elastomer (TPE) rubber film layer.
6. a chemical-mechanical grinding device is used for grinding semiconductor chip, it is characterized in that:
The outer surface of the critical component of said chemical-mechanical grinding device is provided with thin layer.
7. chemical-mechanical grinding device according to claim 6 is characterized in that, the critical component of said chemical-mechanical grinding device comprises: the outer cover of grinding head, grinding head motor, grind in slurry supply arm and the grinding pad control arm one or more.
8. chemical-mechanical grinding device according to claim 6 is characterized in that, said thin layer is a thermoplastic elastomer (TPE) rubber film layer.
9. chemical-mechanical grinding device according to claim 6 is characterized in that, said thin layer adopts viscose glue to be attached at the outer surface of said critical component.
10. chemical-mechanical grinding device according to claim 6 is characterized in that, said thin layer has repellency and permeable gas property, and has anti acid alkali performance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102686154A CN102380818A (en) | 2010-09-01 | 2010-09-01 | Chemical mechanical grinding method and chemical mechanical grinding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102686154A CN102380818A (en) | 2010-09-01 | 2010-09-01 | Chemical mechanical grinding method and chemical mechanical grinding equipment |
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| CN102380818A true CN102380818A (en) | 2012-03-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102686154A Pending CN102380818A (en) | 2010-09-01 | 2010-09-01 | Chemical mechanical grinding method and chemical mechanical grinding equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103862364A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Grinding pad, grinding machine table and grinding method |
| CN112405352A (en) * | 2020-10-26 | 2021-02-26 | 上海中欣晶圆半导体科技有限公司 | Method for improving crystallization of polishing head grinding fluid |
Citations (5)
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| CN1184019A (en) * | 1996-12-02 | 1998-06-10 | 摩托罗拉公司 | Platen coating structure for chemical mechanical polishing and method |
| CN1223194A (en) * | 1997-11-05 | 1999-07-21 | 阿普莱克斯公司 | Apparatus for dispensing slurry |
| US5964413A (en) * | 1997-11-05 | 1999-10-12 | Mok; Peter | Apparatus for dispensing slurry |
| JP2004079690A (en) * | 2002-08-14 | 2004-03-11 | Renesas Technology Corp | Method of manufacturing semiconductor device and semiconductor device |
| CN1931523A (en) * | 2005-09-16 | 2007-03-21 | 联华电子股份有限公司 | Chemomechanical grinder and its grinding pad regulating method |
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- 2010-09-01 CN CN2010102686154A patent/CN102380818A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1184019A (en) * | 1996-12-02 | 1998-06-10 | 摩托罗拉公司 | Platen coating structure for chemical mechanical polishing and method |
| CN1223194A (en) * | 1997-11-05 | 1999-07-21 | 阿普莱克斯公司 | Apparatus for dispensing slurry |
| US5964413A (en) * | 1997-11-05 | 1999-10-12 | Mok; Peter | Apparatus for dispensing slurry |
| US6098901A (en) * | 1997-11-05 | 2000-08-08 | Aplex, Inc. | Apparatus for dispensing slurry |
| JP2004079690A (en) * | 2002-08-14 | 2004-03-11 | Renesas Technology Corp | Method of manufacturing semiconductor device and semiconductor device |
| CN1931523A (en) * | 2005-09-16 | 2007-03-21 | 联华电子股份有限公司 | Chemomechanical grinder and its grinding pad regulating method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103862364A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Grinding pad, grinding machine table and grinding method |
| CN112405352A (en) * | 2020-10-26 | 2021-02-26 | 上海中欣晶圆半导体科技有限公司 | Method for improving crystallization of polishing head grinding fluid |
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Application publication date: 20120321 |