CN102383098A - Method for forming metal compound film - Google Patents
Method for forming metal compound film Download PDFInfo
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- CN102383098A CN102383098A CN2010102749685A CN201010274968A CN102383098A CN 102383098 A CN102383098 A CN 102383098A CN 2010102749685 A CN2010102749685 A CN 2010102749685A CN 201010274968 A CN201010274968 A CN 201010274968A CN 102383098 A CN102383098 A CN 102383098A
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Abstract
The invention provides a method for forming metal compound film, which comprises the following steps: providing a front-end device structure, placing the front-end device structure at a bottom of a reaction chamber which comprises a sputtering device and an inductively coupled plasma device, wherein the sputtering device comprises a target located on the top of the reaction chamber, and the inductively coupled plasma device is used to form a plasma area on the surface of the front-end device structure; forming a target material film formed by the target material on the front-end device structure by the sputtering device; injecting reaction gas to allow the reaction gas to react with the target material film under the condition that the sputtering device is turned off and the inductively coupled plasma device is turned on so as to form the metal compound film. According to the invention, it is ensured that the formed target material film does not change performance of itself due to the containing of other impurities.
Description
Technical field
The present invention relates to semiconductor fabrication process, particularly form the method for metal compound film.
Background technology
The performance of high-end little process chip more and more receives the restriction of the signal transferring lag in the interconnection wiring, and each equipment room that this interconnection wiring is used in this chip keeps connecting.In the interconnection that is referred to as last part technology (BEOL) usually, the delay in these leads is represented through the relevant with it resistance R and the product of capacitor C.Along with improving constantly of chip integration, copper has replaced aluminium becomes the main flow interconnection technique in the VLSI manufacturing.As the surrogate of aluminium, copper conductor can reduce interconnection impedance, reduces power consumption and cost, improves integrated level, device density and the clock requency of chip.When in BEOL wiring, adopting copper to replace aluminium to reduce R, the minimizing of C can realize through reducing around the specific inductivity of the dielectric of interconnection wiring.Adopted the IMD that inter-metal dielectric (IMD) is changed over lower k from silicon-dioxide (specific inductivity k is about 4); Like fluoro silicon-dioxide (k is about 3.6) with by CVD (chemical vapour deposition) or spin coating forms on film organosilicate (k is greatly about 2.7～3.2), with the electric capacity of further reduction BEOL.In making the technology of semiconductor interconnect structure,, be that I/O (I/O) or power supply/ground signalling provide connection with the aluminum cushion layer that forms array so last one deck still adopts the aluminum cushion layer of patterning because that copper is easy to is oxidized.
Shown in Figure 1A; Front end device architecture 111 is provided; Has through hole (or contact hole) 112, in traditional manufacture craft, before forming aluminum cushion layer; Can in through hole (or contact hole) 112, form titanium (Ti) rete 101 and TiN rete 102 as the blocking layer, this tack and block of having considered aluminum cushion layer and interlayer dielectric layer (ILD) forms.The titanium film layer has good tack, and the aluminum cushion layer that the TiN rete also can suppress next will to form effectively and the reaction of titanium film layer.Because the rete that adopts the physical vapor deposition (PVD) method to form; Have characteristics such as high firmness, high-wearing feature (low-friction coefficient), good erosion resistance and chemicalstability; The life-span of rete is very long; Therefore the PVD method has been widely used in the modern semiconductors technology, and a kind of as the PVD method of sputtering method is widely used in the modern industry especially.Therefore, generally speaking, titanium film layer 101 is with continuous (TiN rete 102 sputter in nitrogen atmosphere forms) that forms of the same sputter equipment of configuration titanium target with TiN rete 102.Promptly in through hole/contact hole, form one deck titanium film layer 101 earlier, in reaction chamber, feed N then
2Gas makes N
2Gas forms TiN rete 102 with the titanium atom reaction that sputters.
But the method on this traditional making Ti/TiN blocking layer has certain defective.This be because, when using the sputtering method deposit film, near the plasma body that produces the target is the strongest, is decrement states gradually to front end device architecture 111 surfaces, shown in Figure 1B.It is pointed out that the strong and weak degree of only representing plasma body among the figure, and non-plasma concrete form and direction are merely schematic illustration with the line segment dense degree.Therefore feeding N
2When gas forms the TiN rete, can also generate TiN on the surface of titanium target 105.Like this, when need form the titanium film layer next time, can cause owing to the existence of the surperficial TiN of titanium target and also contain TiN in the titanium film layer, will cause the impure of titanium film layer like this.And the impure meeting of titanium film layer makes the tack of titanium film layer reduce, and in ensuing technology, comes off easily.Can cause the reduction of semiconductor device reliability and the reduction of overall performance like this, when serious, even cause scrapping of entire semiconductor device.In two reaction chambers, make respectively if will form titanium film layer and TiN rete, can cause the rising of cost again, because except reaction chamber, also need supporting various device, this has increased cost of manufacture greatly.
Therefore, need a kind of new method, can avoid owing to target polluted cause utilizing target material the changes of properties of sedimentary film.
Summary of the invention
In the summary of the invention part, introduced the notion of a series of reduced forms, this will further explain in the embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to confirm technical scheme required for protection.
For fear of polluted owing to target cause utilizing target material the changes of properties of sedimentary film; The invention provides a kind of method that forms metal compound film; Comprise: the front end device architecture (a) is provided; Said front end device architecture is placed the bottom in the reaction chamber; Said reaction chamber has sputter equipment and inductance coupled plasma device, and said sputter equipment has the target at the top that is positioned at said reaction chamber, and said inductance coupled plasma device is used for forming the plasma body zone in the zone on said front end device architecture surface; (b) adopt said sputter equipment on said front end device architecture, to form the thin film of target material that the material by said target constitutes; (c) close and under the situation that said inductance coupled plasma device is opened, feed reactant gases at said sputter equipment and make said reactant gases and the reaction of said thin film of target material, to form said metal compound film.
Preferably, be at said sputter equipment and open said inductance coupled plasma device under the state of unlatching.
Preferably, said inductance coupled plasma device has inductance-coupled coil, on the sidewall in the said reaction chamber of said inductance-coupled coil between said target and said front end device architecture.
Preferably, said inductance-coupled coil and said target distance in vertical direction are greater than said inductance-coupled coil and said front end device architecture distance in vertical direction.
Preferably, said inductance-coupled coil and said target distance in vertical direction are more than or equal to 15cm.
Preferably, said inductance-coupled coil and said front end device architecture distance in vertical direction are 0～10cm.
Preferably, said target selected among zirconium target, chromium target, aluminium target, tin target, vanadium target, antimony target, indium target, tungsten target, bismuth target, copper target, tantalum target, zinc target, magnesium target, niobium target, molybdenum target, cobalt target, iron target, germanium target, hafnium target, plumbous target, nickel target, silver-colored target, beryllium target.
Preferably, said target is the titanium target.
Preferably, the top of said front end device architecture has through hole, has the titanium film layer that is formed by said titanium target in the said through hole.
Preferably, said reactant gases is N
2Gas.
Preferably, said metal compound film is the TiN rete.
The power that said inductance coupled plasma device is adopted when preferably, forming said TiN rete is 100～2500W.
Preferably, when forming said TiN rete, the air pressure of said reaction chamber is 1～50mtorr.
According to the present invention, can guarantee that formed thin film of target material can not change the performance of himself because containing other impurity, further, has also avoided final formed other metal compound film to exist impurity to cause the change of self performance.And, can in same reaction chamber, form various required thin film of target material or metal compound film and do not worry that it can be polluted, can either guarantee that the overall performance of final formed semiconducter device can not increase cost again.
Description of drawings
Attached drawings of the present invention is used to understand the present invention at this as a part of the present invention.Embodiments of the invention and description thereof have been shown in the accompanying drawing, have been used for explaining principle of the present invention.In the accompanying drawings,
Figure 1A is the cross-sectional view that traditional making has the semiconductor device structure of titanium film layer and TiN rete;
Figure 1B is the synoptic diagram that plasma intensity is successively decreased from target to front end device architecture place gradually;
Fig. 2 A makes the schematic representation of apparatus of metal compound film according to one embodiment of the invention;
Fig. 2 B is a process flow sheet of making metal compound film according to one embodiment of the invention;
Fig. 3 A to 3E is the diagrammatic cross-section of making the semiconductor device structure with titanium film layer and TiN rete;
Fig. 4 is a process flow sheet of making the semiconductor device structure with titanium film layer and TiN rete.
Embodiment
In the description hereinafter, a large amount of concrete details have been provided so that more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and be able to enforcement.In other example,, describe for technical characterictics more well known in the art for fear of obscuring with the present invention.
In order thoroughly to understand the present invention, will in following description, detailed steps be proposed, so that how explanation the present invention makes metal compound film.Obviously, execution of the present invention is not limited to the specific details that the technician had the knack of of semiconductor applications.Preferred embodiment of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other embodiments.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to description, advantage of the present invention and characteristic will be clearer.Need to prove that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention clearly.Should understand, when mention one deck another the layer " on " time, this layer can perhaps can have one or more middle layers directly in the above.In addition, should also be understood that mention one deck two layers " between " time, it can be just layer between two layers, or also one or more middle layers can be arranged.
Shown in Fig. 2 A, reaction chamber 200 is provided.Reaction chamber 200 has sputter equipment and inductance coupled plasma device (ICP) simultaneously.Sputter equipment and inductance coupled plasma device are the known structure of those skilled in the art.For for simplicity; Sputter equipment only illustrates the negative electrode 201 that is installed in the top in the reaction chamber 200, be installed on negative electrode 201 1 sides target 202 and with target 202 in opposite directions and be installed in the anode 203 of the bottom in the reaction chamber 200; Inductance coupled plasma device only illustrates inductance-coupled coil 204; It is positioned on the sidewall of reaction chamber 200, and on the sidewall between target in reaction chamber 200 202 and the front end device architecture 211.Inductance coupled plasma device is used for forming the plasma body zone in the zone on front end device architecture 211 surfaces.In actual industrial production; Can change target 202 according to required sedimentary film difference; For example the material of target 202 can be the target of following any one material; For example be zirconium target, chromium target, titanium (Ti) target, aluminium target, tin target, vanadium target, antimony target, indium target, tungsten target, bismuth target, copper target, tantalum target, zinc target, magnesium target, niobium target, molybdenum target, cobalt target, iron target, germanium target, hafnium target, plumbous target, nickel target, silver-colored target, beryllium target etc.; And cooperate with it and can react and generate the gas of needed film, the O of normal employing in the industry for example
2, N
2Or Cl
2Deng gas.Front end device architecture 211 is provided, and front end device architecture 211 comprises required entire infrastructure, for example the conventional structure (not shown)s of having accomplished such as grid, source electrode, drain electrode before forming metal compound film.The top of front end device architecture 211 has through hole.Front end device architecture 211 is placed on the anode of reaction chamber 200 and with target 202 in opposite directions.Wherein, Inductance-coupled coil 204 is greater than inductance-coupled coil 204 and front end device architecture 211 distance in vertical direction with target 202 distance in vertical direction; For example; Inductance-coupled coil 204 and target 202 distance in vertical direction are more than or equal to 15cm, and inductance-coupled coil 204 is 0～10cm with front end device architecture 211 distance in vertical direction.
Fig. 2 B shows the step that forms metal compound film according to one embodiment of the invention.In step 201; The front end device architecture is provided; The front end device architecture is placed the bottom in the reaction chamber; Reaction chamber has sputter equipment and inductance coupled plasma device, and sputter equipment has the target at the top that is positioned at reaction chamber, and inductance coupled plasma device is used for forming the plasma body zone in the zone on front end device architecture surface.In step 202, adopt sputter equipment on the front end device architecture, to form the thin film of target material that the material by target constitutes.In step 203, close and under the situation that inductance coupled plasma device is opened, feed reactant gases at sputter equipment and make reactant gases and thin film of target material reaction, to form metal compound film.It is pointed out that among the figure and only represent the strong and weak degree of plasma body, and non-plasma concrete form and direction are merely schematic illustration in different zones with the line segment dense degree.Since inductance coupled plasma device in reaction chamber, have the plasma body honor situation under more easily realize inductively coupled plasma igniting, therefore, preferred scheme be a unlatching inductance coupled plasma device under the state that sputter equipment is opened.
Because before feeding reactant gases; Closed sputter equipment; And the inductance-coupled coil of inductance coupled plasma device and target have certain distance, therefore this moment target near do not have the existence of plasma body, so can not react on the target surface; Only can react, so just can not pollute target on the thin film of target material surface.So; When reusing this target and carrying out plated film; Just can guarantee that formed thin film of target material can not change the performance of himself because containing other impurity, further, has also avoided final formed other metal compound film to exist impurity to cause the change of self performance.And; Method according to present embodiment; Can in same reaction chamber, form various required thin film of target material or metal compound film and not worry that it can be polluted, can either guarantee that the overall performance of final formed semiconducter device can not increase cost again.
Shown in Fig. 3 A to 3E, for the making of adopting aforesaid method has the diagrammatic cross-section of the semiconductor device structure of titanium film layer and TiN rete.
Shown in Fig. 3 A, reaction chamber 300 and substrate 311 are provided.Reaction chamber 300 has sputter equipment and inductance coupled plasma device, and sputter equipment and inductance coupled plasma device can be any structures known in those skilled in the art.For example sputter equipment is a magnetically controlled DC sputtering device etc.For for simplicity; Sputter equipment only illustrates the negative electrode 301 that is installed in the top in the reaction chamber 300, be installed on negative electrode 301 1 sides titanium target 302 and with titanium target 302 in opposite directions and be installed in the anode 303 of the bottom in the reaction chamber 300; Inductance coupled plasma device only illustrates inductance-coupled coil 304; It is positioned on the sidewall of reaction chamber 300, and on the sidewall in the reaction chamber 300 between substrate 311 and anode 303.Wherein, the distance on the vertical direction of inductance-coupled coil 304 and substrate 311 is 0～10cm, and the distance on inductance-coupled coil 304 and target 302 vertical direction is more than or equal to 15cm.Substrate 311 be placed on the anode in the reaction chamber 300 and with target 302 in opposite directions.Substrate 311 is included in and forms Ti/TiN blocking layer required structure before, and for example common process structures such as grid, source electrode, drain electrode it is pointed out that the top of substrate 311 has through hole, and are for for simplicity, all not shown among the figure.
Shown in Fig. 3 B, open sputter equipment, in entire reaction chamber 300, form plasma body in substrate 311, to form titanium film layer 312.For example,, apply direct current, then in substrate 311, can form the titanium film layer 312 that a layer thickness is approximately 200～1000 dusts through 301 pairs of titanium targets 302 of negative electrode if sputter equipment is the magnetically controlled DC sputtering device.Substrate 311 with titanium film layer 312 is called the front end device architecture, and the top of front end device architecture is the through hole with the titanium film layer that is formed by the titanium target.
Shown in Fig. 3 C, open inductance coupled plasma device, utilize inductance-coupled coil 304 to form the plasma body zone in zone near titanium film layer 312 surface, promptly form the plasma body zone in place away from titanium target 302.Alternatively, can close sputter equipment earlier, open inductance coupled plasma device again.But; Owing to more easily realize the inductively coupled plasma igniting under the situation that inductance coupled plasma device has plasma body to exist in reaction chamber 300; Therefore, present embodiment is chosen in the following inductance coupled plasma device of opening of state that sputter equipment is opened.The air pressure that be provided with reaction chamber 300 this moment is 1～50mtorr, and the power that power supply coupling plasma body device is set is 100～2500W.Wherein, 1torr ≈ 133.32 pascals.
Shown in Fig. 3 D, close sputter equipment.
Shown in Fig. 3 E, with N
2Gas feeds in the reaction chamber 300, under the effect of the plasma body that inductance coupled plasma device produced, and N
2Sedimentary part titanium film layer 312 reacts in gas and the substrate 311, forms TiN rete 313, and thickness is approximately 20～100 dusts.So just formed the common Ti/TiN metal barrier that adopts in the semiconductor device technology.
As shown in Figure 4, have the process flow sheet of the semiconductor device structure of titanium film layer and TiN rete for making.In step 401, the front end device architecture is provided, the top of front end device architecture has through hole, has the titanium film layer that is formed by the titanium target in the through hole.In step 402; The front end device architecture is placed the bottom in the reaction chamber; Reaction chamber has sputter equipment and inductance coupled plasma device; Sputter equipment has the titanium target at the top that is positioned at reaction chamber, and inductance coupled plasma device is used for forming the plasma body zone in the zone on front end device architecture surface.In step 403, adopt sputter equipment on the front end device architecture, to form the titanium film layer that forms by the titanium target.In step 404, close and under the situation that inductance coupled plasma device is opened, feed N at sputter equipment
2Gas makes N
2Gas and the reaction of part titanium film layer form the TiN rete.
Method according to present embodiment; In the process of formation TiN rete, form the plasma body zone in place away from the titanium target, promptly only near the titanium film layer, form the plasma body zone and also only react at the titanium film laminar surface; Can avoid pollution to the titanium target; When using the titanium target to form the titanium film layer, can the performance to formed titanium film layer not affect so next time, for example avoid the titanium film layer because loss of adhesion and problem that come off easily because titanium target surface has TiN impurity.Therefore, improve the good article rate of semiconducter device, guaranteed the safety of semiconducter device.And, do not need extra reaction chamber, can not cause the raising of production cost.
Metal compound film according to aforesaid embodiment manufacturing can be applicable in the multiple unicircuit (IC).According to IC of the present invention for example is memory circuitry, like random-access memory (ram), dynamic ram (DRAM), synchronous dram (SDRAM), static RAM (SRAM) (SRAM) or ROS (ROM) or the like.According to IC of the present invention can also be logical device, like programmable logic array (PLA), application specific integrated circuit (ASIC), combination type DRAM logical integrated circuit (buried type dynamic RAM), radio-frequency devices or other circuit devcies arbitrarily.IC chip according to the present invention can be used for for example consumer electronic products; In various electronic products such as Personal Computer, portable computer, game machine, cellular phone, personal digital assistant, pick up camera, digital camera, mobile phone, especially in the radio frequency products.
The present invention is illustrated through the foregoing description, but should be understood that, the foregoing description just is used for for example and illustrative purposes, but not is intended to the present invention is limited in the described scope of embodiments.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to the foregoing description, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by appended claims book and equivalent scope thereof.
Claims (13)
1. method that forms metal compound film comprises:
(a) the front end device architecture is provided; Said front end device architecture is placed the bottom in the reaction chamber; Said reaction chamber has sputter equipment and inductance coupled plasma device; Said sputter equipment has the target at the top that is positioned at said reaction chamber, and said inductance coupled plasma device is used for forming the plasma body zone in the zone on said front end device architecture surface;
(b) adopt said sputter equipment on said front end device architecture, to form the thin film of target material that the material by said target constitutes;
(c) close and under the situation that said inductance coupled plasma device is opened, feed reactant gases at said sputter equipment and make said reactant gases and the reaction of said thin film of target material, to form said metal compound film.
2. the method for claim 1 is characterized in that, is at said sputter equipment to open said inductance coupled plasma device under the state of unlatching.
3. according to claim 1 or claim 2 method is characterized in that said inductance coupled plasma device has inductance-coupled coil, on the sidewall in the said reaction chamber of said inductance-coupled coil between said target and said front end device architecture.
4. method as claimed in claim 3 is characterized in that, said inductance-coupled coil and said target distance in vertical direction are greater than said inductance-coupled coil and said front end device architecture distance in vertical direction.
5. method as claimed in claim 4 is characterized in that, said inductance-coupled coil and said target distance in vertical direction are more than or equal to 15cm.
6. like claim 4 or 5 described methods, it is characterized in that said inductance-coupled coil and said front end device architecture distance in vertical direction are 0～10cm.
7. according to claim 1 or claim 2 method; It is characterized in that said target selected among zirconium target, chromium target, aluminium target, tin target, vanadium target, antimony target, indium target, tungsten target, bismuth target, copper target, tantalum target, zinc target, magnesium target, niobium target, molybdenum target, cobalt target, iron target, germanium target, hafnium target, plumbous target, nickel target, silver-colored target, beryllium target.
8. according to claim 1 or claim 2 method is characterized in that said target is the titanium target.
9. method as claimed in claim 8 is characterized in that the top of said front end device architecture has through hole, has the titanium film layer that is formed by said titanium target in the said through hole.
10. like claim 8 or 9 described methods, it is characterized in that said reactant gases is a N2 gas.
11. method as claimed in claim 10 is characterized in that, said metal compound film is the TiN rete.
12. method as claimed in claim 11 is characterized in that, the power that said inductance coupled plasma device is adopted when forming said TiN rete is 100～2500W.
13. method as claimed in claim 11 is characterized in that, when forming said TiN rete, the air pressure in the said reaction chamber is 1～50mtorr.
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| CN2010102749685A CN102383098A (en) | 2010-09-03 | 2010-09-03 | Method for forming metal compound film |
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| CN2010102749685A CN102383098A (en) | 2010-09-03 | 2010-09-03 | Method for forming metal compound film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073769A (en) * | 2013-03-28 | 2014-10-01 | 大日本网屏制造株式会社 | Film forming method |
| CN104870683A (en) * | 2012-12-18 | 2015-08-26 | 株式会社爱发科 | Film formation method and film formation device |
| CN105937019A (en) * | 2016-06-12 | 2016-09-14 | 中国科学院上海硅酸盐研究所 | VO2 thin film doped with metallic element Mg and preparation method thereof |
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| US5902461A (en) * | 1997-09-03 | 1999-05-11 | Applied Materials, Inc. | Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma |
| CN101702398A (en) * | 2009-11-19 | 2010-05-05 | 复旦大学 | Method for preparing metal oxide film with high dielectric constant on silicon substrate |
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2010
- 2010-09-03 CN CN2010102749685A patent/CN102383098A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5902461A (en) * | 1997-09-03 | 1999-05-11 | Applied Materials, Inc. | Apparatus and method for enhancing uniformity of a metal film formed on a substrate with the aid of an inductively coupled plasma |
| CN101702398A (en) * | 2009-11-19 | 2010-05-05 | 复旦大学 | Method for preparing metal oxide film with high dielectric constant on silicon substrate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104870683A (en) * | 2012-12-18 | 2015-08-26 | 株式会社爱发科 | Film formation method and film formation device |
| CN104870683B (en) * | 2012-12-18 | 2018-08-31 | 株式会社爱发科 | Film build method and film formation device |
| CN104073769A (en) * | 2013-03-28 | 2014-10-01 | 大日本网屏制造株式会社 | Film forming method |
| CN105937019A (en) * | 2016-06-12 | 2016-09-14 | 中国科学院上海硅酸盐研究所 | VO2 thin film doped with metallic element Mg and preparation method thereof |
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