CN102383174A - Electroplating anode - Google Patents
Electroplating anode Download PDFInfo
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- CN102383174A CN102383174A CN2010102751717A CN201010275171A CN102383174A CN 102383174 A CN102383174 A CN 102383174A CN 2010102751717 A CN2010102751717 A CN 2010102751717A CN 201010275171 A CN201010275171 A CN 201010275171A CN 102383174 A CN102383174 A CN 102383174A
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Abstract
The invention provides an electroplating anode; the electroplating anode comprises an electroplating surface; the electroplating surface comprises at least 3 areas which are a first area, a second area, and a third area along a radial direction of the electroplating anode; the unit surface areas of the first area, the second area, and the third area decrease in order. An electroplated layer formed by the electroplating anode of the invention has a uniform thickness.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly be used for the galvanic anode of electro-coppering in the fabricate process.
Background technology
Integrated circuit fabrication process is a kind of plane manufacture craft, and it combines photoetching, etching, deposition, kinds of processes such as ion implantation, on same substrate, forms various types of complex devices, and it is interconnected to have complete electrical functions.Wherein, the formation of the deposition of metal, metal line etc. technology all need use the use electroplating technology.For example, in the wiring stage, between layer and the layer be connected and same wiring layer between the interconnection of device, be to utilize electroplating technology to form metal level mostly, then metal level is carried out etching formation metal connecting line.
With reference to figure 1, be existing plating apparatus structure synoptic diagram.The existing plating device comprises plating tank 106, and said plating tank 106 internal memories are placed with electrolytic solution, and said electrolytic solution contains the metallic cation of electrolytic coating to be formed.Material with electrolytic coating to be formed is that copper is example, comprises cupric ion in the said electrolytic solution.
Be placed with galvanic anode 105 in the said plating tank 106, the material of said galvanic anode 105 is relevant with the material of electrolytic coating to be formed, and the material of said galvanic anode 105 is copper or copper alloy.Said galvanic anode 105 is cylindrical.Electroplated wafer 101 is placed with galvanic anode 105 relatively.Said wafer has center A and edge B.Said electroplated wafer 101 has deposited inculating crystal layer 102 in advance, and the material of said inculating crystal layer 102 is identical with the material of electrolytic coating to be formed, if electrolytic coating material to be formed is a copper, the material of inculating crystal layer 102 is a copper.
When electroplating, said electroplated wafer 101 and inculating crystal layer 102 are connected the negative electricity of negative electrode with direct supply 104 as negative electrode; Galvanic anode 105 is as anode, and the positive pole of anode and direct supply 104 is electrically connected.When anode and negative electrode are connected with direct supply 104 respectively, there is electrical forces between anode and the negative electrode, said electrical forces makes and arrives the cupric ion accelerated motion that anode produces inculating crystal layer 102 surfaces, and be attached to inculating crystal layer 102 surfaces, forms electrolytic coating.Usually, the copper of electrolytic coating comes from anode, and therefore in electroplating process, the copper ion concentration in the electrolytic solution is constant basically.
, application number can find more information in being 03150640.2 Chinese patent about existing plating copper.
Development along with semiconductor fabrication process; Inculating crystal layer thickness reduces gradually, and those skilled in the art find that the thickness of plating layer that existing plating technology forms is inhomogeneous; The thickness of plating layer of center wafer is less than the thickness of plating layer of Waffer edge; Both deviations reach 800 dusts, and the uniformity coefficient of electrolytic coating can't satisfy processing requirement, and possibly make other follow-up technologies (for example chemical mechanical milling tech and etching technics etc.) to carry out.
Summary of the invention
The problem that the present invention solves has provided a kind of galvanic anode; Said galvanic anode has improved the uniformity coefficient of electroplating the thickness of plating layer that forms; Dwindled the deviation of electrolytic coating thickness of electrolytic coating thickness and the Waffer edge of center wafer; Improve the stability of electroplating technology, made other follow-up technologies to carry out smoothly.
For addressing the above problem; The present invention provides a kind of galvanic anode; Said galvanic anode has plate surface; Said plate surface comprises at least 3 zones, is respectively first area, second area and the 3rd zone along the radial direction of galvanic anode, and the per surface area in said first area, second area, the 3rd zone reduces successively.
Alternatively; Said plate surface comprises 3 zones; Said first area, second area, the 3rd zone comprise some concentric V-type grooves respectively; Said concentric grooves is a spination along the cross section of the radial direction of galvanic anode, is the V-type groove between the adjacent sawtooth, and the flute density in said first area, second area, the 3rd zone reduces successively.
Alternatively; Said first area is the center of circle for the center with said plate surface; With 1/5～3/10 of the radius of said plate surface is the border circular areas of radius; Said second area is for being the center of circle with the center of said plate surface, is interior ring, is outer shroud and definite circle ring area of radius with the radius 3/10～4/5 of said plate surface with the border of said first area, and said the 3rd zone is interior ring, is the annular region of outer shroud with the radius of said plate surface with the outer shroud of second area; Said first area has the some first concentric V-type groove; Said second area has the some second concentric V-type groove, and said the 3rd zone has the some the 3rd concentric V-type groove, and the groove width of the said first concentric V-type groove, the second concentric V-type groove, the 3rd concentric V-type groove increases successively; Slot pitch increases successively, and the groove depth of said first groove, second groove, the 3rd groove is identical.
Alternatively, the groove width of the said first concentric V-type groove is 3～5 millimeters, and the slot pitch of the said first concentric V-type groove is 3～5 millimeters, and the angle of inclination of the said first concentric V-type groove is 40～50 degree.
Alternatively, the groove width of the said first concentric V-type groove equals the slot pitch of the said first concentric V-type groove.
Alternatively, the groove width of the said second concentric V-type groove is 4～10 millimeters, and the slot pitch of the said second concentric V-type groove is 4～10 millimeters, and the angle of inclination of the said first concentric V-type groove is 40～50 degree.
Alternatively, the groove width of the said second concentric V-type groove equals the slot pitch of the said second concentric V-type groove.
Alternatively, the groove width of the said the 3rd concentric V-type groove is 5～15 millimeters, and the slot pitch of the said the 3rd concentric V-type groove is 5～15 millimeters, and the angle of inclination of the said the 3rd concentric V-type groove is 40～50 degree.
Alternatively, the groove width of the said the 3rd concentric V-type groove equals the slot pitch of the said the 3rd concentric V-type groove.
Alternatively, the material of said galvanic anode is copper, copper-bearing alloy.
Compared with prior art; The present invention has the following advantages: the plate surface of galvanic anode provided by the invention comprises at least 3 zones; Be respectively first area, second area and the 3rd zone along the radial direction of galvanic anode; The per surface area in said first area, second area, the 3rd zone reduces successively, thereby makes the copper ion concentration in the corresponding electrolytic solution in first area, second area, the 3rd zone reduce successively, and the bath resistance in first area, second area, the 3rd zone increases successively; Eliminated the influence that center wafer reduces to the resistance of Waffer edge inculating crystal layer successively; Make that the copper ion concentration of near center of wafer and Waffer edge is more approaching, reduce the thickness of plating layer deviation of the electrolytic coating and the Waffer edge of center wafer, improve the uniformity coefficient of electrolytic coating.
Description of drawings
Fig. 1 is an existing plating apparatus structure synoptic diagram.
Fig. 2 is the deviation graph of relation of inculating crystal layer and electrolytic coating.
Fig. 3 is the areal distribution synoptic diagram of the plate surface of galvanic anode of the present invention.
Fig. 4 is a galvanic anode shown in Figure 3 cross-sectional view along radial direction.
Embodiment
The contriver finds, the inculating crystal layer thickness of electroplating technology is influential to the thickness deviation of the thickness of plating layer of center wafer and Waffer edge.With reference to figure 2, be the deviation graph of relation of inculating crystal layer and electrolytic coating.Like Fig. 2, when inculating crystal layer thickness was 750 dusts, the electrolytic coating of center wafer was than little 400 dusts of thickness at edge; Along with the development of semiconductor fabrication process, the thickness of inculating crystal layer reduces gradually, and the electrolytic coating of center wafer and the thickness deviation of Waffer edge increase gradually, and when inculating crystal layer thickness was 50 dusts, the electrolytic coating of center wafer and the thickness deviation of Waffer edge were 800 dusts.
For the electrolytic coating thickness that the causes center wafer reason less than the electrolytic coating thickness of Waffer edge is described, with reference to figure 1.For the B point of wafer 101 marginal positions, when electroplating, electric current flows to the negative pole of direct supply 104, formation loop from the positive pole of direct supply 104 through galvanic anode 105, electrolytic solution (being equivalent to resistance), wafer 101 edge B points.The size of said electric current depends on the resistance in the loop, and the resistance in the said loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.Because said electric current process wafer 101 edge B points directly arrive the negative pole of power supply 104, the inculating crystal layer resistance that said B is ordered is almost nil.Therefore, said equivalent resistance bath resistance no better than.
A point for wafer 101 central positions; When electroplating; Electric current flows to the negative pole of power supply 104 through the inculating crystal layer 102 between the edge B point of the center A point of galvanic anode 105, electrolytic solution (being equivalent to resistance), wafer 101 and said center A point and wafer 101 from the positive pole of direct supply 104; Form the loop, the size of said electric current depends on the resistance in the loop, and the resistance in the said loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.Because the edge B point of said electric current process center wafer A point and inculating crystal layer 102, wafer 101, therefore, the resistance in the said loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.
In like manner; For on the wafer 101 between Waffer edge and the center more arbitrarily; When electroplating, electric current from the positive pole of direct supply 104 through galvanic anode 105, electrolytic solution, said arbitrarily a bit and said arbitrarily a bit and the inculating crystal layer 102 between the edge B point of wafer flow to the negative pole of power supply 104, formation loop; Said size of current depends on the resistance in the loop, and the resistance in the said loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.
Find out from above-mentioned analysis; Because the inculating crystal layer resistance sizes depends on the length of electric current through the path of inculating crystal layer, therefore, the resistance in circuit that the resistance in circuit that the center A point of wafer forms forms greater than Waffer edge B point; From center wafer on the radial direction of outer; The resistance in circuit that each point forms on the wafer reduces successively, thereby when electroplating, the electric current that the electric current that the center A of wafer is ordered is ordered less than the edge B of wafer; To the outer radial direction, the electric current of each point increases successively on the wafer from center wafer.Because the electric current when electroplating is big more, the copper ion concentration of wafer surface is big more, and the thickness of plating layer of formation is big more, and therefore, the thickness of plating layer from the edge of center to the wafer of wafer along radial direction increases successively.
In order to eliminate the influence of inculating crystal layer to wafer surface electrolytic coating thickness; The contriver proposes a kind of galvanic anode; Said galvanic anode has plate surface; Said plate surface comprises at least 3 zones, is respectively first area, second area and the 3rd zone along the radial direction of galvanic anode, and the per surface area in said first area, second area, the 3rd zone reduces successively.
To combine concrete embodiment to describe below.With reference to figure 3, be the areal distribution synoptic diagram of the plate surface of galvanic anode of the present invention.The material of galvanic anode of the present invention is relevant with the material of electrolytic coating to be formed.With electrolytic coating to be formed is that copper is example, and the material of said galvanic anode is copper or copper-bearing alloy, and galvanic anode can produce cupric ion (positively charged ion when electroplating) in electrolytic solution like this.The plate surface radius of said galvanic anode is identical with the radius of electroplated wafer.
As an embodiment, the plate surface of said galvanic anode comprises 3 zones, is respectively first area 21, second area 22, the 3rd zone 23.The per surface area in said first area 21, second area 22, the 3rd zone 23 reduces successively.When electroplating; The first area 21 of galvanic anode, second area 22, the 3rd zone 23 are corresponding with first area, second area, the 3rd zone of electroplated wafer respectively; Be that the size and the shape of first area is identical on size and shape and the wafer of first area 21 of said galvanic anode; The size and the shape of second area are identical on the size of the second area 22 of galvanic anode and shape and the wafer, and the 3rd regional size and shape is identical on the size in the 3rd zone 23 of galvanic anode and shape and the wafer.
With reference to figure 3, said first area 21 is the center of circle for the center with said plate surface, is the border circular areas of radius with 1/5～3/10 of the radius of said plate surface.As an embodiment, said first area 21 is the center of circle for the center with said plate surface, is the border circular areas of radius with 1/4 of the radius of said plate surface.
Said second area 22 is the center of circle for the center with said plate surface, is interior ring, is outer shroud and definite circle ring area of radius with the radius 3/10～4/5 of said plate surface with the border of said first area 21.As an embodiment, said second area 22 is the center of circle for the center with said plate surface, with the border of first area 21, is the annular region that the outer shroud of radius is confirmed with 3/4 of the radius of said plate surface.
Said the 3rd zone 23 outer shrouds with second area 22 are interior ring, be the annular region of outer shroud with the radius of said plate surface.
Per surface area according to the invention is meant the area of the galvanic anode in the unit area, is example with the first area 21 of galvanic anode, and the per surface area of the first area 21 of galvanic anode equals the area of this regional galvanic anode and the ratio of this region area.Said per surface area is big more; When electroplating; Big more with the contact area of electrolytic solution, thus the number of the positively charged ion (being cupric ion in the present embodiment) that galvanic anode that should the zone produces is many more, correspondingly; The number of positively charged ion (cupric ion) of corresponding zone that under the effect of electrical forces, arrives wafer is many more, and is more little to bath resistance that should the zone.
Because the per surface area in the first area 21 of galvanic anode, second area 22, the 3rd zone 23 reduces successively; Accordingly; The copper ion concentration that the first area 21 of galvanic anode, second area 22, the 3rd zone 23 produce reduces successively; Make first area 21, second area 22, the 3rd zone 23 corresponding bath resistances of galvanic anode increase successively; Said bath resistance has remedied the problem that the inculating crystal layer resistance of the electric current process in the first area on the wafer, second area, the 3rd zone reduces successively; Make that the loop resistance in first area on the final wafer, second area, the 3rd zone is almost equal, therefore, the loop current in first area, second area, the 3rd zone is almost equal on the wafer; The electrolytic coating thickness in first area, second area, the 3rd zone is identical on the final wafer, forms thickness uniformity coefficient electrolytic coating.
As the case may be, the plate surface of said galvanic anode can also be divided into more zone.For example; Center from plate surface; Radial direction along plate surface is divided into 5 zones with plate surface; Be first area, second area, the 3rd zone, the 4th zone, the 5th zone, the per surface area in said first area, second area, the 3rd zone, the 4th zone, the 5th zone reduces successively.Said first area can be to be the center of circle with the plate surface center, and the radius of 1/5 plate surface is the border circular areas of radius; Second area can be that the edge with the first area is interior ring, is that the radius of center, 2/5 plate surface is outer shroud and definite circle ring area with the plate surface center; Said the 3rd zone is that the outer shroud with second area is interior ring, is the center with the plate surface center, and the radius of 3/5 plate surface is outer shroud and definite circle ring area; Said the 4th zone is that the outer shroud with the 3rd zone is interior ring, is the center with the plate surface center, and the radius of 4/5 plate surface is outer shroud and definite circle ring area; Said the 5th zone is to be interior ring with the four-range outer shroud, is the center with the plate surface center, and the radius of plate surface is outer shroud and definite circle ring area.
Please refer to Fig. 3, as an embodiment, said first area 21 comprises a plurality of concentric V-type grooves, and said concentric grooves is a spination along the cross section of the radial direction of galvanic anode, is the V-type groove between the adjacent sawtooth; Said second area 22 comprises a plurality of concentric V-type grooves, and said concentric grooves is a spination along the cross section of the radial direction of galvanic anode, is the V-type groove between the adjacent sawtooth; Said the 3rd zone 23 comprises a plurality of concentric V-type grooves, and said concentric grooves is a spination along the cross section of the radial direction of galvanic anode, is the V-type groove between the adjacent sawtooth.
For the shape of concentric V-type groove clearly is described, please refer to Fig. 4, be the diametric schematic cross-section in galvanic anode edge.
Said first area 21 comprises a plurality of first concentric V-type groove 211.The said first concentric V-type groove 211 has the summit and is positioned at the summit side walls; Ultimate range between the said sidewall is the groove width of the first concentric V-type groove 211; Said summit is a groove depth with the distance of the groove width direction of the first concentric V-type groove 211; The distance on the adjacent first concentric V-type groove, 211 summits is a slot pitch, the angle of inclination of the angle first concentric V-type groove 211 between the both sides sidewall of the first concentric V-type groove 211.In the present embodiment, outside from the center of galvanic anode, identical along groove width, slot pitch, groove depth and the angle of inclination of the radial direction said first concentric V-type groove 211.The groove width of the said first concentric V-type groove 211 is 3～5 millimeters, and the slot pitch of the said first concentric V-type groove is 3～5 millimeters, and the angle of inclination of the said first concentric V-type groove 211 is 40～50 degree.In the present embodiment, the groove width of said first concentric grooves 211 and slot pitch equate.
Said second area 22 has the some second concentric V-type groove 221; The said second concentric V-type groove 221 has the summit and is positioned at the summit side walls; Ultimate range between the said sidewall is the groove width of the second concentric V-type groove 221; Said summit is a groove depth with the distance of the groove width direction of the second concentric V-type groove 221; The distance on the adjacent second concentric V-type groove, 221 summits is a slot pitch, and the angle between the both sides sidewall of the second concentric V-type groove 221 is the angle of inclination of the second concentric V-type groove 221.In the present embodiment, outside from the center of galvanic anode, identical along groove width, slot pitch, groove depth and the angle of inclination of the radial direction said second concentric V-type groove 221.The groove width of the said second concentric V-type groove 221 is 4～10 millimeters, and the slot pitch of the said second concentric V-type groove 221 is 4～10 millimeters, and the angle of inclination of the said second concentric V-type groove 221 is 40～50 degree.The groove width of the said second concentric V-type groove 221 and slot pitch are less than the groove width and the slot pitch of the first concentric V-type groove 211, and the groove depth of the said second concentric V-type groove 221 equals the groove depth of the first concentric V-type groove 211.
Said the 3rd zone 23 has the some the 3rd concentric V-type groove 231; The said the 3rd concentric V-type groove 231 has the summit and is positioned at the summit side walls; Ultimate range between the said sidewall is the groove width of the 3rd concentric V-type groove 231; Said summit is a groove depth with the distance of the groove width direction of the 3rd concentric V-type groove 231; The distance on adjacent the 3rd concentric V-type groove 231 summits is a slot pitch, and the angle between the both sides sidewall of the 3rd concentric V-type groove 231 is the angle of inclination of the 3rd concentric V-type groove 231.In the present embodiment, outside from the center of galvanic anode, identical along groove width, slot pitch, groove depth and the angle of inclination of radial direction the said the 3rd concentric V-type groove 231.The groove width of the said the 3rd concentric V-type groove 231 is 4～10 millimeters, and the slot pitch of the said the 3rd concentric V-type groove 231 is 4～10 millimeters, and the angle of inclination of the said the 3rd concentric V-type groove 231 is 40～50 degree.The groove width of said the 3rd V-type groove 231 is identical with groove depth.The groove width of the said the 3rd concentric V-type groove 231 and groove depth are less than the groove width and the groove depth of the second concentric V-type groove 221, and the groove depth of the said the 3rd concentric V-type groove 231 equals the groove depth of the second concentric V-type groove 221.
The flute density in said first area 21, second area 22, the 3rd zone 23 reduces successively.Flute density of the present invention is meant the radial direction along galvanic anode, and is outside from the center of galvanic anode, the number of the groove of unit area.Because said flute density is big more; Corresponding per surface area is also big more, and therefore, the per surface area in said first area 21, second area 22, the 3rd zone 23 reduces successively; Thereby the area that first area 21, second area 22, the 3rd zone 23 contact with electrolytic solution reduces successively; The copper ion concentration that makes first area 21, second area 22, the 3rd zone 23 produce reduces successively, increases successively with said first area 21, second area 22, the 3rd zone 23 corresponding bath resistances, correspondingly; Said bath resistance has remedied the problem that the inculating crystal layer resistance of the electric current process in the first area on the wafer, second area, the 3rd zone reduces successively; Make that the loop resistance in first area on the final wafer, second area, the 3rd zone is almost equal, therefore, the loop current in first area, second area, the 3rd zone is almost equal on the wafer; The electrolytic coating thickness in first area, second area, the 3rd zone is identical on the final wafer, forms thickness uniformity coefficient electrolytic coating.
To sum up; The invention provides a kind of galvanic anode; Said galvanic anode comprises first area, second area, the 3rd zone; The per surface area in said first area, second area, the 3rd zone reduces successively, and said galvanic anode has eliminated that inculating crystal layer resistance forms the uniform electrolytic coating of thickness to the influence of electrolytic coating uniformity coefficient on the wafer.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (10)
1. galvanic anode; Said galvanic anode has plate surface; It is characterized in that; Said plate surface comprises at least 3 zones, is respectively first area, second area and the 3rd zone along the radial direction of galvanic anode, and the per surface area in said first area, second area, the 3rd zone reduces successively.
2. galvanic anode as claimed in claim 1; It is characterized in that; Said plate surface comprises 3 zones, and said first area, second area, the 3rd zone comprise some concentric V-type grooves respectively, and said concentric grooves is a spination along the cross section of the radial direction of galvanic anode; Be the V-type groove between the adjacent sawtooth, the flute density in said first area, second area, the 3rd zone reduces successively.
3. galvanic anode as claimed in claim 2; It is characterized in that; Said first area is for being the center of circle with the center of said plate surface, is the border circular areas of radius with 1/5～3/10 of the radius of said plate surface, and said second area is the center of circle for the center with said plate surface; Be interior ring, be outer shroud and definite circle ring area of radius with the radius 3/10～4/5 of said plate surface with the border of said first area; Said the 3rd zone is interior ring, is the annular region of outer shroud with the radius of said plate surface that with the outer shroud of second area said first area has the some first concentric V-type groove, and said second area has the some second concentric V-type groove; Said the 3rd zone has the some the 3rd concentric V-type groove; The groove width of the said first concentric V-type groove, the second concentric V-type groove, the 3rd concentric V-type groove increases successively, and slot pitch increases successively, and the groove depth of said first groove, second groove, the 3rd groove is identical.
4. galvanic anode as claimed in claim 3 is characterized in that, the groove width of the said first concentric V-type groove is 3～5 millimeters, and the slot pitch of the said first concentric V-type groove is 3～5 millimeters, and the angle of inclination of the said first concentric V-type groove is 40～50 degree.
5. galvanic anode as claimed in claim 3 is characterized in that, the groove width of the said first concentric V-type groove equals the slot pitch of the said first concentric V-type groove.
6. galvanic anode as claimed in claim 3 is characterized in that, the groove width of the said second concentric V-type groove is 4～10 millimeters, and the slot pitch of the said second concentric V-type groove is 4～10 millimeters, and the angle of inclination of the said first concentric V-type groove is 40～50 degree.
7. galvanic anode as claimed in claim 3 is characterized in that, the groove width of the said second concentric V-type groove equals the slot pitch of the said second concentric V-type groove.
8. galvanic anode as claimed in claim 3 is characterized in that, the groove width of the said the 3rd concentric V-type groove is 5～15 millimeters, and the slot pitch of the said the 3rd concentric V-type groove is 5～15 millimeters, and the angle of inclination of the said the 3rd concentric V-type groove is 40～50 degree.
9. galvanic anode as claimed in claim 3 is characterized in that, the groove width of the said the 3rd concentric V-type groove equals the slot pitch of the said the 3rd concentric V-type groove.
10. galvanic anode as claimed in claim 1 is characterized in that, the material of said galvanic anode is copper, copper-bearing alloy.
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| CN115369464A (en) * | 2022-08-24 | 2022-11-22 | 合肥微睿光电科技有限公司 | Method for generating oxide film on surface of upper electrode, upper electrode and cathode plate |
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| CN103849909A (en) * | 2014-02-26 | 2014-06-11 | 东又悦（苏州）电子科技新材料有限公司 | Phosphor copper ball with grooves at surface and preparation method thereof |
| CN103849909B (en) * | 2014-02-26 | 2017-01-04 | 东又悦（苏州）电子科技新材料有限公司 | A kind of surface has the preparation method of reeded phosphorous copper balls |
| CN104928723A (en) * | 2014-03-21 | 2015-09-23 | 爱蓝天高新技术材料(大连)有限公司 | Foam metal plate and manufacturing method thereof |
| CN105316754A (en) * | 2014-07-29 | 2016-02-10 | 盛美半导体设备（上海）有限公司 | Electrochemical machining process and device |
| CN105316754B (en) * | 2014-07-29 | 2019-08-16 | 盛美半导体设备（上海）有限公司 | Electrochemical machining process and electrochemical machining apparatus |
| CN110512248A (en) * | 2018-05-21 | 2019-11-29 | 盛美半导体设备（上海）有限公司 | Electroplating device and electro-plating method |
| CN110512248B (en) * | 2018-05-21 | 2022-04-12 | 盛美半导体设备(上海)股份有限公司 | Electroplating apparatus and electroplating method |
| CN115369464A (en) * | 2022-08-24 | 2022-11-22 | 合肥微睿光电科技有限公司 | Method for generating oxide film on surface of upper electrode, upper electrode and cathode plate |
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| CN102383174B (en) | 2014-09-24 |
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