CN102383174B - Electroplating anode - Google Patents
Electroplating anode Download PDFInfo
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- CN102383174B CN102383174B CN201010275171.7A CN201010275171A CN102383174B CN 102383174 B CN102383174 B CN 102383174B CN 201010275171 A CN201010275171 A CN 201010275171A CN 102383174 B CN102383174 B CN 102383174B
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Abstract
The invention provides an electroplating anode; the electroplating anode comprises an electroplating surface; the electroplating surface comprises at least 3 areas which are a first area, a second area, and a third area along a radial direction of the electroplating anode; the unit surface areas of the first area, the second area, and the third area decrease in order. An electroplated layer formed by the electroplating anode of the invention has a uniform thickness.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly in semiconducter device making processes for the galvanic anode of electro-coppering.
Background technology
Integrated circuit fabrication process is a kind of plane manufacture craft, and it,, in conjunction with photoetching, etching, deposition, the kinds of processes such as ion implantation, forms various types of complex devices, and interconnected to have complete electrical functions on same substrate.Wherein, the deposition of metal, the formation of metal line etc. technique all need with using electroplating technology.For example, in the wiring stage, the interconnection of device between connection between layers and same wiring layer, is to utilize electroplating technology to form metal level mostly, then metal level is carried out to etching and forms metal connecting line.
With reference to figure 1, it is existing electroplanting device structural representation.Existing electroplanting device comprises plating tank 106, and described plating tank 106 internal memories are placed with electrolytic solution, the metallic cation that described electrolytic solution contains electrolytic coating to be formed.Take the material of electrolytic coating to be formed as copper is example, in described electrolytic solution, comprise cupric ion.
In described plating tank 106, be placed with galvanic anode 105, the material of described galvanic anode 105 is relevant with the material of electrolytic coating to be formed, and the material of described galvanic anode 105 is copper or copper alloy.Described galvanic anode 105 is cylindrical.Electroplated wafer 101 is staggered relatively with galvanic anode 105.Described wafer has center A and edge B.Described electroplated wafer 101 has deposited inculating crystal layer 102 in advance, and the material of described inculating crystal layer 102 is identical with the material of electrolytic coating to be formed, if electrolytic coating material to be formed is copper, the material of inculating crystal layer 102 is copper.
When electroplating, described electroplated wafer 101, is connected negative electrode as negative electrode with inculating crystal layer 102 with the negative electricity of direct supply 104; Galvanic anode 105, as anode, is electrically connected the positive pole of anode and direct supply 104.When anode and negative electrode are connected with direct supply 104 respectively, between anode and negative electrode, there is electrical forces, the cupric ion accelerated motion that described electrical forces produces anode, arrives inculating crystal layer 102 surfaces, and is attached to inculating crystal layer 102 surfaces, forms electrolytic coating.Conventionally, the copper of electrolytic coating comes from anode, and therefore, in electroplating process, the copper ion concentration in electrolytic solution is substantially constant.
In the Chinese patent that is 03150640.2 at application number, can find the more information about existing electro-coppering.
Development along with semiconductor fabrication process, inculating crystal layer thickness reduces gradually, those skilled in the art find, the electrolytic coating that existing electroplating technology forms in uneven thickness, the thickness of the electrolytic coating of center wafer is less than the thickness of the electrolytic coating of Waffer edge, both deviations reach 800 dusts, and the uniformity coefficient of electrolytic coating cannot meet processing requirement, and may make follow-up other techniques (such as chemical mechanical milling tech and etching technics etc.) to carry out.
Summary of the invention
The problem that the present invention solves has been to provide a kind of galvanic anode, described galvanic anode has improved the uniformity coefficient of electroplating the thickness of the electrolytic coating forming, dwindled the deviation of the electrolytic coating thickness of center wafer and the electrolytic coating thickness of Waffer edge, improved the stability of electroplating technology, other follow-up techniques can be carried out smoothly.
For addressing the above problem, the invention provides a kind of galvanic anode, described galvanic anode has plate surface, described plate surface comprises at least 3 regions, be respectively first area, second area and the 3rd region along the radial direction of galvanic anode, the per surface area in described first area, second area, the 3rd region reduces successively.
Alternatively, described plate surface comprises 3 regions, described first area, second area, the 3rd region comprise respectively some V-shaped concentric grooves, described concentric grooves is spination along the cross section of the radial direction of galvanic anode, between adjacent sawtooth, be V-type groove, the groove density in described first area, second area, the 3rd region reduces successively.
Alternatively, described first area is the center of circle for take the center of described plate surface, take 1/5～3/10 border circular areas that is radius of radius of described plate surface, described second area is the center of circle for take the center of described plate surface, take the border of described first area is interior ring, the definite circle ring area of outer shroud that the radius 3/10～4/5 of described plate surface of take is radius, it is interior ring that the outer shroud of second area is take in described the 3rd region, the annular region that the radius of described plate surface of take is outer shroud, described first area has some the first V-shaped concentric grooves, described second area has some the second V-shaped concentric grooves, described the 3rd region has some the 3rd V-shaped concentric grooves, described the first V-shaped concentric groove, the second V-shaped concentric groove, the groove width of the 3rd V-shaped concentric groove increases successively, slot pitch increases successively, described the first groove, the second groove, the groove depth of the 3rd groove is identical.
Alternatively, the groove width of described the first V-shaped concentric groove is 3～5 millimeters, and the slot pitch of described the first V-shaped concentric groove is 3～5 millimeters, and the angle of inclination of described the first V-shaped concentric groove is 40～50 degree.
Alternatively, the groove width of described the first V-shaped concentric groove equals the slot pitch of described the first V-shaped concentric groove.
Alternatively, the groove width of described the second V-shaped concentric groove is 4～10 millimeters, and the slot pitch of described the second V-shaped concentric groove is 4～10 millimeters, and the angle of inclination of described the first V-shaped concentric groove is 40～50 degree.
Alternatively, the groove width of described the second V-shaped concentric groove equals the slot pitch of described the second V-shaped concentric groove.
Alternatively, the groove width of described the 3rd V-shaped concentric groove is 5～15 millimeters, and the slot pitch of described the 3rd V-shaped concentric groove is 5～15 millimeters, and the angle of inclination of described the 3rd V-shaped concentric groove is 40～50 degree.
Alternatively, the groove width of described the 3rd V-shaped concentric groove equals the slot pitch of described the 3rd V-shaped concentric groove.
Alternatively, the material of described galvanic anode is copper, copper-bearing alloy.
Compared with prior art, the present invention has the following advantages: the plate surface of galvanic anode provided by the invention comprises at least 3 regions, it is respectively the first area along the radial direction of galvanic anode, second area and the 3rd region, described first area, second area, the per surface area in the 3rd region reduces successively, thereby make first area, second area, copper ion concentration in electrolytic solution corresponding to the 3rd region reduces successively, first area, second area, the bath resistance in the 3rd region increases successively, eliminated the impact that center wafer reduces successively to the resistance of Waffer edge inculating crystal layer, make the copper ion concentration of near the center of wafer and Waffer edge more approaching, reduce the thickness deviation of the electrolytic coating of center wafer and the electrolytic coating of Waffer edge, improve the uniformity coefficient of electrolytic coating.
Accompanying drawing explanation
Fig. 1 is existing electroplanting device structural representation.
Fig. 2 is the deviation graph of relation of inculating crystal layer and electrolytic coating.
Fig. 3 is the areal distribution schematic diagram of the plate surface of galvanic anode of the present invention.
Fig. 4 is that the galvanic anode shown in Fig. 3 is along the cross-sectional view of radial direction.
Embodiment
Contriver's discovery, the inculating crystal layer thickness of electroplating technology has impact to the thickness deviation of the thickness of the electrolytic coating of center wafer and Waffer edge.With reference to figure 2, it is the deviation graph of relation of inculating crystal layer and electrolytic coating.As Fig. 2, when inculating crystal layer thickness is 750 dust, the electrolytic coating of center wafer is than little 400 dusts of the thickness at edge; Along with the development of semiconductor fabrication process, the thickness of inculating crystal layer reduces gradually, and the electrolytic coating of center wafer and the thickness deviation of Waffer edge increase gradually, and when inculating crystal layer thickness is 50 dust, the electrolytic coating of center wafer and the thickness deviation of Waffer edge are 800 dusts.
In order to illustrate, cause the electrolytic coating thickness of center wafer to be less than the reason of the electrolytic coating thickness of Waffer edge, with reference to figure 1.For the B point of wafer 101 marginal positions, when electroplating, electric current flows to the negative pole of direct supply 104 from the positive pole of direct supply 104 through galvanic anode 105, electrolytic solution (being equivalent to resistance), wafer 101 edge B points, form loop.The size of described electric current depends on the resistance in loop, and the resistance in described loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.Because described electric current directly arrives the negative pole of power supply 104 through wafer 101 edge B points, the inculating crystal layer resistance that described B is ordered is almost nil.Therefore, described equivalent resistance is no better than bath resistance.
A point for wafer 101 central positions, when electroplating, electric current flows to the negative pole of power supply 104 from the positive pole of direct supply 104 through the inculating crystal layer 102 between galvanic anode 105, electrolytic solution (being equivalent to resistance), wafer 101 center A point and described center A point and the edge B point of wafer 101, form loop, the size of described electric current depends on the resistance in loop, and the resistance in described loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.Due to the described electric current edge B point through center wafer A point and inculating crystal layer 102, wafer 101, therefore, the resistance in described loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.
In like manner, for any point between Waffer edge and center on wafer 101, when electroplating, electric current flows to the negative pole of power supply 104 from the positive pole of direct supply 104 through the inculating crystal layer 102 between the edge B point of galvanic anode 105, electrolytic solution, described any point and described any point and wafer, form loop, described size of current depends on the resistance in loop, and the resistance in described loop equals the inculating crystal layer resistance sum of bath resistance and electric current process.
From above-mentioned analysis, find out, because inculating crystal layer resistance sizes depends on that electric current is through the length in the path of inculating crystal layer, therefore, the resistance in the loop that the center A point of wafer forms is greater than the resistance in the loop of Waffer edge B point formation, from center wafer to the radial direction of outer, the resistance in the loop that on wafer, each point forms reduces successively, thereby when electroplating, the electric current that the center A of wafer is ordered is less than the electric current that the edge B of wafer is ordered, from center wafer to outer radial direction, on wafer, the electric current of each point increases successively.Electric current owing to electroplating is larger, and the copper ion concentration of wafer surface is larger, and the thickness of the electrolytic coating of formation is larger, and therefore, from the center of wafer, to the edge of wafer, the thickness along the electrolytic coating of radial direction increases successively.
In order to eliminate the impact of inculating crystal layer on wafer surface electrolytic coating thickness, contriver proposes a kind of galvanic anode, described galvanic anode has plate surface, described plate surface comprises at least 3 regions, be respectively first area, second area and the 3rd region along the radial direction of galvanic anode, the per surface area in described first area, second area, the 3rd region reduces successively.
Describe below in conjunction with specific embodiments.With reference to figure 3, it is the areal distribution schematic diagram of the plate surface of galvanic anode of the present invention.The material of galvanic anode of the present invention is relevant with the material of electrolytic coating to be formed.Take electrolytic coating to be formed as copper be example, the material of described galvanic anode is copper or copper-bearing alloy, galvanic anode can produce cupric ion (positively charged ion when electroplating) in electrolytic solution like this.The plate surface radius of described galvanic anode is identical with the radius of electroplated wafer.
As an embodiment, the plate surface of described galvanic anode comprises 3 regions, is respectively first area 21, second area 22, the 3rd region 23.The per surface area in described first area 21, second area 22, the 3rd region 23 reduces successively.When electroplating, the first area 21 of galvanic anode, second area 22, the 3rd region 23 are corresponding with first area, second area, the 3rd region of electroplated wafer respectively, the size and shape of first area 21 that is described galvanic anode is identical with the size and shape of first area on wafer, the size and shape of the second area 22 of galvanic anode is identical with the size and shape of second area on wafer, and the size and shape in the 3rd region 23 of galvanic anode is identical with the size and shape in the 3rd region on wafer.
With reference to figure 3, described first area 21 is the center of circle for take the center of described plate surface, take 1/5～3/10 border circular areas that is radius of radius of described plate surface.As an embodiment, described first area 21 is the center of circle for take the center of described plate surface, take 1/4 border circular areas that is radius of radius of described plate surface.
Described second area 22 is the center of circle for take the center of described plate surface, take the definite circle ring area of outer shroud that the border of described first area 21 is radius as interior ring, the radius 3/10～4/5 of described plate surface of take.As an embodiment, described second area 22 is the center of circle for take the center of described plate surface, with the border of first area 21, take the 3/4 definite annular region of outer shroud that is radius of radius of described plate surface.
The annular region that the outer shroud of second area 22 is outer shroud as interior ring, the radius of described plate surface of take is take in described the 3rd region 23.
Per surface area of the present invention refers to the area of the galvanic anode in unit area, and take the first area 21 of galvanic anode is example, and the per surface area of the first area 21 of galvanic anode equals the area of galvanic anode and the ratio of this region area in this region.Described per surface area is larger, when electroplating, larger with the contact area of electrolytic solution, thereby the number of the positively charged ion (being cupric ion in the present embodiment) that the galvanic anode in this region produces is more, correspondingly, the number of positively charged ion (cupric ion) that arrives the corresponding zone of wafer under the effect of electrical forces is more, less to bath resistance that should region.
First area 21 due to galvanic anode, second area 22, the per surface area in the 3rd region 23 reduces successively, accordingly, the first area 21 of galvanic anode, second area 22, the copper ion concentration that the 3rd region 23 produces reduces successively, make the first area 21 of galvanic anode, second area 22, the bath resistance of the 3rd region 23 correspondences increases successively, described bath resistance has made up the first area on wafer, second area, the problem that the inculating crystal layer resistance of the electric current process in the 3rd region reduces successively, make first area on final wafer, second area, the loop resistance in the 3rd region is almost equal, therefore, first area on wafer, second area, the loop current in the 3rd region is almost equal, first area on final wafer, second area, the electrolytic coating thickness in the 3rd region is identical, form even thickness degree electrolytic coating.
As the case may be, the plate surface of described galvanic anode can also be divided into more region.For example, center from plate surface, radial direction along plate surface is divided into 5 regions by plate surface, be first area, second area, the 3rd region, the 4th region, the 5th region, the per surface area in described first area, second area, the 3rd region, the 4th region, the 5th region reduces successively.Described first area can be to take plate surface center as the center of circle, the border circular areas that the radius of 1/5 plate surface is radius; Second area can be that to take the edge of first area be interior ring, take centered by plate surface center, the radius of 2/5 plate surface is the definite circle ring area of outer shroud; Described the 3rd region is that to take the outer shroud of second area be interior ring, and centered by plate surface center, the radius of 3/5 plate surface is outer shroud and definite circle ring area; Described the 4th region is that to take the outer shroud in the 3rd region be interior ring, and centered by plate surface center, the radius of 4/5 plate surface is outer shroud and definite circle ring area; Described the 5th region is to take four-range outer shroud as interior ring, and centered by plate surface center, the radius of plate surface is outer shroud and definite circle ring area.
Please refer to Fig. 3, as an embodiment, described first area 21 comprises a plurality of V-shaped concentric grooves, and described concentric grooves is spination along the cross section of the radial direction of galvanic anode, is V-type groove between adjacent sawtooth; Described second area 22 comprises a plurality of V-shaped concentric grooves, and described concentric grooves is spination along the cross section of the radial direction of galvanic anode, is V-type groove between adjacent sawtooth; Described the 3rd region 23 comprises a plurality of V-shaped concentric grooves, and described concentric grooves is spination along the cross section of the radial direction of galvanic anode, is V-type groove between adjacent sawtooth.
For the shape of V-shaped concentric groove is clearly described, please refer to Fig. 4, for galvanic anode is along diametric schematic cross-section.
Described first area 21 comprises a plurality of the first V-shaped concentric grooves 211.Described the first V-shaped concentric groove 211 has summit and is positioned at the sidewall of both sides, summit, ultimate range between described sidewall is the groove width of the first V-shaped concentric groove 211, the distance of the groove width direction of described summit and the first V-shaped concentric groove 211 is groove depth, the distance on the first adjacent V-shaped concentric groove 211 summits is slot pitch, the angle of inclination of angle the first V-shaped concentric groove 211 between the both sides sidewall of the first V-shaped concentric groove 211.In the present embodiment, outside from the center of galvanic anode, identical along groove width, slot pitch, groove depth and the angle of inclination of the first V-shaped concentric groove 211 described in radial direction.The groove width of described the first V-shaped concentric groove 211 is 3～5 millimeters, and the slot pitch of described the first V-shaped concentric groove is 3～5 millimeters, and the angle of inclination of described the first V-shaped concentric groove 211 is 40～50 degree.In the present embodiment, the groove width of described the first concentric grooves 211 and slot pitch equate.
Described second area 22 has some the second V-shaped concentric grooves 221, described the second V-shaped concentric groove 221 has summit and is positioned at the sidewall of both sides, summit, ultimate range between described sidewall is the groove width of the second V-shaped concentric groove 221, the distance of the groove width direction of described summit and the second V-shaped concentric groove 221 is groove depth, the distance on the second adjacent V-shaped concentric groove 221 summits is slot pitch, and the angle between the both sides sidewall of the second V-shaped concentric groove 221 is the angle of inclination of the second V-shaped concentric groove 221.In the present embodiment, outside from the center of galvanic anode, identical along groove width, slot pitch, groove depth and the angle of inclination of the second V-shaped concentric groove 221 described in radial direction.The groove width of described the second V-shaped concentric groove 221 is 4～10 millimeters, and the slot pitch of described the second V-shaped concentric groove 221 is 4～10 millimeters, and the angle of inclination of described the second V-shaped concentric groove 221 is 40～50 degree.The groove width of described the second V-shaped concentric groove 221 and slot pitch are less than groove width and the slot pitch of the first V-shaped concentric groove 211, and the groove depth of described the second V-shaped concentric groove 221 equals the groove depth of the first V-shaped concentric groove 211.
Described the 3rd region 23 has some the 3rd V-shaped concentric grooves 231, described the 3rd V-shaped concentric groove 231 has summit and is positioned at the sidewall of both sides, summit, ultimate range between described sidewall is the groove width of the 3rd V-shaped concentric groove 231, the distance of the groove width direction of described summit and the 3rd V-shaped concentric groove 231 is groove depth, the distance on the 3rd adjacent V-shaped concentric groove 231 summits is slot pitch, and the angle between the both sides sidewall of the 3rd V-shaped concentric groove 231 is the angle of inclination of the 3rd V-shaped concentric groove 231.In the present embodiment, outside from the center of galvanic anode, identical along groove width, slot pitch, groove depth and the angle of inclination of the 3rd V-shaped concentric groove 231 described in radial direction.The groove width of described the 3rd V-shaped concentric groove 231 is 4～10 millimeters, and the slot pitch of described the 3rd V-shaped concentric groove 231 is 4～10 millimeters, and the angle of inclination of described the 3rd V-shaped concentric groove 231 is 40～50 degree.The groove width of described the 3rd V-type groove 231 is identical with groove depth.The groove width of described the 3rd V-shaped concentric groove 231 and groove depth are less than groove width and the groove depth of the second V-shaped concentric groove 221, and the groove depth of described the 3rd V-shaped concentric groove 231 equals the groove depth of the second V-shaped concentric groove 221.
The groove density in described first area 21, second area 22, the 3rd region 23 reduces successively.Groove density of the present invention, refers to the radial direction along galvanic anode, outside from the center of galvanic anode, the number of the groove of unit area.Because described groove density is larger, corresponding per surface area is also larger, therefore, and described first area 21, second area 22, the per surface area in the 3rd region 23 reduces successively, thus first area 21, second area 22, the area that the 3rd region 23 contacts with electrolytic solution reduces successively, makes first area 21, second area 22, the copper ion concentration that the 3rd region 23 produces reduces successively, with described first area 21, second area 22, the bath resistance of the 3rd region 23 correspondences increases successively, and correspondingly, described bath resistance has made up the first area on wafer, second area, the problem that the inculating crystal layer resistance of the electric current process in the 3rd region reduces successively, makes first area on final wafer, second area, the loop resistance in the 3rd region is almost equal, therefore, and first area on wafer, second area, the loop current in the 3rd region is almost equal, first area on final wafer, second area, the electrolytic coating thickness in the 3rd region is identical, forms even thickness degree electrolytic coating.
To sum up, the invention provides a kind of galvanic anode, described galvanic anode comprises first area, second area, the 3rd region, the per surface area in described first area, second area, the 3rd region reduces successively, described galvanic anode has been eliminated the impact of inculating crystal layer resistance on electrolytic coating uniformity coefficient on wafer, forms the electrolytic coating of even thickness.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that the claims in the present invention were defined.
Claims (10)
1. a galvanic anode, described galvanic anode has plate surface, it is characterized in that, described galvanic anode is solubility galvanic anode, described plate surface comprises at least 3 regions, be respectively first area, second area and the 3rd region along the radial direction of galvanic anode, the per surface area in described first area, second area, the 3rd region reduces successively, to reduce the impact of inculating crystal layer resistance on electrolytic coating uniformity coefficient on wafer; Described per surface area equals the area of galvanic anode and the ratio of this region area in this region, and described per surface area is larger, when electroplating, larger with the contact area of electrolytic solution.
2. galvanic anode as claimed in claim 1, it is characterized in that, described plate surface comprises 3 regions, described first area, second area, the 3rd region comprise respectively some V-shaped concentric grooves, described concentric grooves is spination along the cross section of the radial direction of galvanic anode, between adjacent sawtooth, be V-type groove, the groove density in described first area, second area, the 3rd region reduces successively.
3. galvanic anode as claimed in claim 2, it is characterized in that, described first area is the center of circle for take the center of described plate surface, take 1/5～3/10 border circular areas that is radius of radius of described plate surface, described second area is the center of circle for take the center of described plate surface, take the border of described first area is interior ring, the definite circle ring area of outer shroud that the radius 3/10～4/5 of described plate surface of take is radius, it is interior ring that the outer shroud of second area is take in described the 3rd region, the annular region that the radius of described plate surface of take is outer shroud, described first area has some the first V-shaped concentric grooves, described second area has some the second V-shaped concentric grooves, described the 3rd region has some the 3rd V-shaped concentric grooves, described the first V-shaped concentric groove, the second V-shaped concentric groove, the groove width of the 3rd V-shaped concentric groove increases successively, slot pitch increases successively, described the first groove, the second groove, the groove depth of the 3rd groove is identical.
4. galvanic anode as claimed in claim 3, is characterized in that, the groove width of described the first V-shaped concentric groove is 3～5 millimeters, and the slot pitch of described the first V-shaped concentric groove is 3～5 millimeters, and the angle of inclination of described the first V-shaped concentric groove is 40～50 degree.
5. galvanic anode as claimed in claim 3, is characterized in that, the groove width of described the first V-shaped concentric groove equals the slot pitch of described the first V-shaped concentric groove.
6. galvanic anode as claimed in claim 3, is characterized in that, the groove width of described the second V-shaped concentric groove is 4～10 millimeters, and the slot pitch of described the second V-shaped concentric groove is 4～10 millimeters, and the angle of inclination of described the first V-shaped concentric groove is 40～50 degree.
7. galvanic anode as claimed in claim 3, is characterized in that, the groove width of described the second V-shaped concentric groove equals the slot pitch of described the second V-shaped concentric groove.
8. galvanic anode as claimed in claim 3, is characterized in that, the groove width of described the 3rd V-shaped concentric groove is 5～15 millimeters, and the slot pitch of described the 3rd V-shaped concentric groove is 5～15 millimeters, and the angle of inclination of described the 3rd V-shaped concentric groove is 40～50 degree.
9. galvanic anode as claimed in claim 3, is characterized in that, the groove width of described the 3rd V-shaped concentric groove equals the slot pitch of described the 3rd V-shaped concentric groove.
10. galvanic anode as claimed in claim 1, is characterized in that, the material of described galvanic anode is copper, copper-bearing alloy.
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| CN103849909B (en) * | 2014-02-26 | 2017-01-04 | 东又悦（苏州）电子科技新材料有限公司 | A kind of surface has the preparation method of reeded phosphorous copper balls |
| CN104928723B (en) * | 2014-03-21 | 2018-06-26 | 爱蓝天高新技术材料(大连)有限公司 | A kind of foam metal plate and its manufacturing method |
| CN105316754B (en) * | 2014-07-29 | 2019-08-16 | 盛美半导体设备（上海）有限公司 | Electrochemical machining process and electrochemical machining apparatus |
| CN110512248B (en) * | 2018-05-21 | 2022-04-12 | 盛美半导体设备(上海)股份有限公司 | Electroplating apparatus and electroplating method |
| CN115369464B (en) * | 2022-08-24 | 2023-07-18 | 合肥微睿光电科技有限公司 | Method for generating oxide film on surface of upper electrode, upper electrode and cathode plate |
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