CN102417155B - Production method of tri-axial accelerometer - Google Patents
Production method of tri-axial accelerometer Download PDFInfo
- Publication number
- CN102417155B CN102417155B CN201110235832.8A CN201110235832A CN102417155B CN 102417155 B CN102417155 B CN 102417155B CN 201110235832 A CN201110235832 A CN 201110235832A CN 102417155 B CN102417155 B CN 102417155B
- Authority
- CN
- China
- Prior art keywords
- layer
- protective layer
- axis accelerometer
- doped silicon
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention provides a production method of a tri-axial accelerometer, characterized by using an SOI chip as a substrate and finishing the arrangement of a structural layer of X-Y axis and Z axis of the tri-axial accelerometer on the chip. According to the invention, the production cost is reduced, and the production process is simplified.
Description
[technical field]
The present invention relates to a kind of preparation method of accelerometer, relate in particular to a kind of preparation method of three axis accelerometer.
[background technology]
Accelerometer, acceleration induction device, is a kind of electronic equipment that can measure acceleration.Acceleration induction device is mainly used in location sensitive, displacement induction or motion state induction etc.As; on mobile phone, use acceleration induction device; just can detect the laying state of mobile phone; keep flat or inclination etc.; according to state, start different programs to reach certain effect; for another example; may be used on notebook computer; survey the moving state of notebook, and according to these data, system can select to close hard disk intelligently still allows it continue operation; can farthest protect due to vibration like this; such as the working environment jolting, or the hard disk infringement that computer causes, the farthest data of protection the inside have been fallen because of carelessness.Another one use is exactly in the digital camera and video camera of current use, also has acceleration transducer, is used for detecting the vibration of hand when taking, and according to these vibrations, automatically regulates the focusing of camera.
Accelerometer mainly comprises twin-axis accelerometer and three axis accelerometer, and twin-axis accelerometer detects the accekeration of X-axis and Y direction, and three axis accelerometer detects the accekeration of X-axis, Y-axis and three directions of Z axis.Three axis accelerometer related to the present invention generally adopts polysilicon to do substrate or utilizes two silicon wafer bondings integrated, but the residual stress of polysilicon is higher, and polysilicon is thinner, does not utilize processing; Utilize two silicon wafers to generate each essential structure sheaf, and then be linked and integrate, the cost of this prescribing method is too high, is unfavorable for reducing production costs, and is difficult to realize user to the high-performance of product and requirement cheaply.
Therefore, be necessary to provide a kind of preparation method of new acceleration transducer.
[summary of the invention]
The technical problem that the present invention need solve is to provide the preparation method of a kind of low cost, the simple three axis accelerometer of preparation method.
The present invention is by such technical scheme technical solution problem:
A preparation method for three axis accelerometer, wherein, the method comprises the steps:
A, provide a SOI wafer, this SOI wafer comprises layer-of-substrate silicon, intermediate oxide layer and doped silicon top layer;
B, utilize deep reaction ion etching technology to etch groove at doped silicon top layer, make described groove run through whole doped silicon top layer;
C, with plasma-enhanced chemical vapor deposition method deposit first protective layer on described doped silicon top layer;
D, use photoetching technique are carried out patterning to the first protective layer;
Method deposit second protective layer between described the first protective layer and doped silicon top layer of E, use chemical vapour deposition;
F, on described the first protective layer deposit sacrifice layer;
G, use photoetching technique are carried out patterning to sacrifice layer;
Method depositing polysilicon layer on sacrifice layer and the second protective layer of H, use low pressure chemical vapor deposition, and use lithographic technique to polysilicon layer and the second protective layer patterning;
I, at the first protective layer and polysilicon layer, plate metal;
J, in the layer-of-substrate silicon relative with polysilicon, etch the back of the body chamber of running through whole layer-of-substrate silicon;
K, by deep reaction ion etching technology, whole doped silicon top layer is run through to intermediate oxide layer in gap;
L, release total, obtain three axis accelerometer.
As a modification of the present invention, the material of described the first protective layer and the second protective layer is the undoped silicon glass of low stress.
As a modification of the present invention, the phosphorosilicate glass layer of described sacrifice layer for forming by plasma-enhanced chemical vapor deposition method.
As a modification of the present invention, the release of described sacrifice layer adopts hydrofluoric acid to discharge.
As this kind of improvement, described metal is gold.
The present invention has the following advantages: owing to adopting SOI wafer to do substrate, completed the structure sheaf of XY axle and Z axis on a wafer, reduced production cost, and simplified manufacturing process.
[accompanying drawing explanation]
Fig. 1 to Figure 12 is the flow chart that the present invention manufactures the method for acceleration transducer.
[specific embodiment]
Below in conjunction with drawings and embodiments, the invention will be further described.
The invention provides and a kind ofly based on SOI wafer, do substrate and the method for the acceleration transducer processed.Fig. 1 is to the preparation method that Figure 12 shows that three axis accelerometer 10 of the present invention, and its concrete operation step is as follows:
A, as shown in Figure 1, provides a SOI (Siliconon Insulator, the silicon in dielectric substrate) wafer, and this SOI wafer comprises layer-of-substrate silicon 11, intermediate oxide layer 12 and doped silicon top layer 13;
B, as shown in Figure 2, utilizes deep reaction ion etching technology (DREI, Deep Reative Ion Etching) to etch groove 130 at doped silicon top layer 13, makes described groove 130 run through whole doped silicon top layer 13;
C, as shown in Figure 3, with plasma-enhanced chemical vapor deposition method (PECVD, Plasma Enhanced Chemical Vapor Deposition) deposit the first protective layer 141 on described doped silicon top layer 13, the material of described the first protective layer 141 is undoped silicon glass (USG, Undoped Silicate Glass) of low stress;
D, as shown in Figure 4, is used photoetching technique to etch some gaps 140 to the first protective layer 141;
E, as shown in Figure 5, use the method (CVD of chemical vapour deposition, Chemical Vapor Deposition) deposit the second protective layer 142 between described the first protective layer 141 and doped silicon top layer 13, the material of described the second protective layer 142 is undoped silicon glass (USG, Undoped Silicate Glass) of low stress;
F, as shown in Figure 6, deposit sacrifice layer 15 on described the first protective layer 141, described sacrifice layer 15 is the method (PECVD with plasma-enhanced chemical vapour deposition, Plasma Enhanced Chemical Vapor Deposition) phosphorosilicate glass layer (PSG, Phospho Slicate Glass) forming;
G, as shown in Figure 7, is used photoetching technique by sacrifice layer 15 patternings;
H, as shown in Figure 8, method (LPCVD with low pressure chemical vapor deposition, Low Pressure Chemical Vapor Deposition) depositing polysilicon layer 16 on sacrifice layer 15 and the first protective layer 141, is used lithographic technique to etch some through holes 160 that run through polysilicon layer 16 to polysilicon layer 16 patternings and by polysilicon layer 16; Use photoetching technique to the second protective layer 142 patternings, remove the second protective layer 142 of polysilicon layer 16 peripheries, the second protective layer 142 under reservation polysilicon layer 16;
I, as shown in Figure 9, plates metal 17 at the first protective layer and polysilicon layer 16, and metal 17 can, for gold (Au), can be also other metal;
J, as shown in figure 10, etches the back of the body chamber 110 of running through whole layer-of-substrate silicon 11 in the layer-of-substrate silicon 11 relative with polysilicon layer 16;
K, as shown in figure 11, runs through whole doped silicon top layer 13 to intermediate oxide layer 12 by deep reaction ion etching technology (DREI, Deep Reative Ion Etching) by gap 140;
L, as shown in figure 12, adopts hydrofluoric acid to discharge total, obtains cavity 17, and cavity 17 connects with through hole 160 and groove 130, and groove 130 connects with back of the body chamber 110, obtains three axis accelerometer 10.
To sum up, owing to adopting SOI wafer to do substrate, on a wafer, completed the XY axle of three axis accelerometer and the structure sheaf of Z axis, reduced production cost, and simplified manufacturing process.
Above-described is only embodiments of the present invention, at this, it should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also make improvement, but these all belongs to protection scope of the present invention.
Claims (5)
1. a preparation method for three axis accelerometer, is characterized in that: the method comprises the steps:
A, provide a SOI wafer, this SOI wafer comprises layer-of-substrate silicon, intermediate oxide layer and doped silicon top layer;
B, utilize deep reaction ion etching technology to etch groove at doped silicon top layer, make described groove run through whole doped silicon top layer;
Method deposit first protective layer on described doped silicon top layer of C, the vapour deposition of use plasma-enhanced chemical;
D, at the first protective layer, etch some gaps;
Method deposit second protective layer between described the first protective layer and doped silicon top layer of E, use chemical vapour deposition;
F, on described the first protective layer deposit sacrifice layer;
G, use photoetching technique are carried out patterning to sacrifice layer;
Method depositing polysilicon layer on sacrifice layer and the second protective layer of H, use low pressure chemical vapor deposition, and use lithographic technique to polysilicon layer and the second protective layer patterning;
I, at the first protective layer and polysilicon layer, plate metal;
J, in the layer-of-substrate silicon relative with polysilicon, etch the back of the body chamber of running through whole layer-of-substrate silicon;
K, by deep reaction ion etching technology, whole doped silicon top layer is run through to intermediate oxide layer in gap;
L, release total, obtain three axis accelerometer.
2. the preparation method of three axis accelerometer according to claim 1, is characterized in that: the material of described the first protective layer and the second protective layer is the undoped silicon glass of low stress.
3. the preparation method of three axis accelerometer according to claim 1, is characterized in that: the phosphorosilicate glass layer of described sacrifice layer for forming by plasma-enhanced chemical vapor deposition method.
4. the preparation method of three axis accelerometer according to claim 1, is characterized in that: the release of described total adopts hydrofluoric acid to discharge.
5. the preparation method of three axis accelerometer according to claim 1, is characterized in that: described metal is gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110235832.8A CN102417155B (en) | 2011-08-17 | 2011-08-17 | Production method of tri-axial accelerometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110235832.8A CN102417155B (en) | 2011-08-17 | 2011-08-17 | Production method of tri-axial accelerometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102417155A CN102417155A (en) | 2012-04-18 |
| CN102417155B true CN102417155B (en) | 2014-03-26 |
Family
ID=45941836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110235832.8A Expired - Fee Related CN102417155B (en) | 2011-08-17 | 2011-08-17 | Production method of tri-axial accelerometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102417155B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6808956B2 (en) * | 2000-12-27 | 2004-10-26 | Honeywell International Inc. | Thin micromachined structures |
| JP2009200474A (en) * | 2008-01-04 | 2009-09-03 | Honeywell Internatl Inc | Method for manufacturing single soi wafer acceleration meter |
| EP2228337A2 (en) * | 2009-03-11 | 2010-09-15 | Honeywell International Inc. | Manufacturing an accelerometer on SOI wafer |
| CN101852816A (en) * | 2009-12-31 | 2010-10-06 | 中国电子科技集团公司第四十九研究所 | Piezoresistive monolithic integrated tri-axial acceleration sensor and manufacturing method thereof |
| CN101858928A (en) * | 2009-04-10 | 2010-10-13 | 利顺精密科技股份有限公司 | Capacitance-type triaxial accelerator for micromotor system |
| CN101907637A (en) * | 2010-06-29 | 2010-12-08 | 瑞声声学科技(深圳)有限公司 | Triaxial differential accelerometer and manufacture method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8747642B2 (en) * | 2009-10-29 | 2014-06-10 | Advantest America, Inc. | Superfilling secondary metallization process in MEMS fabrication |
-
2011
- 2011-08-17 CN CN201110235832.8A patent/CN102417155B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6808956B2 (en) * | 2000-12-27 | 2004-10-26 | Honeywell International Inc. | Thin micromachined structures |
| JP2009200474A (en) * | 2008-01-04 | 2009-09-03 | Honeywell Internatl Inc | Method for manufacturing single soi wafer acceleration meter |
| EP2228337A2 (en) * | 2009-03-11 | 2010-09-15 | Honeywell International Inc. | Manufacturing an accelerometer on SOI wafer |
| CN101858928A (en) * | 2009-04-10 | 2010-10-13 | 利顺精密科技股份有限公司 | Capacitance-type triaxial accelerator for micromotor system |
| CN101852816A (en) * | 2009-12-31 | 2010-10-06 | 中国电子科技集团公司第四十九研究所 | Piezoresistive monolithic integrated tri-axial acceleration sensor and manufacturing method thereof |
| CN101907637A (en) * | 2010-06-29 | 2010-12-08 | 瑞声声学科技(深圳)有限公司 | Triaxial differential accelerometer and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102417155A (en) | 2012-04-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9200973B2 (en) | Semiconductor package with air pressure sensor | |
| JP6549769B2 (en) | Pressure sensor including deformable pressure conduit | |
| US8652961B1 (en) | Methods and structure for adapting MEMS structures to form electrical interconnections for integrated circuits | |
| US9090452B2 (en) | Mechanism for forming MEMS device | |
| US20150137806A1 (en) | Three axis magnetic sensor device and method using flex cables | |
| CN105531220A (en) | MEMS acoustic transducer with silicon nitride backplate and silicon sacrificial layer | |
| US20130126990A1 (en) | Sensor manufacturing method and microphone structure made by using the same | |
| CN104591075A (en) | Method to protect an acoustic port of a microelectromechanical system (MEMS) microphone and form thereof at a wafer level | |
| WO2016192371A1 (en) | Integrated sensor device and manufacturing method thereof | |
| CN102238463A (en) | Method and chip for integrating silicon microphone device with IC (integrated circuit) single chip | |
| US20110117747A1 (en) | Method of fabricating single chip for integrating field-effect transistor into mems structure | |
| CN103663357A (en) | Silicon etching method | |
| US9550669B2 (en) | Vertical pressure sensitive structure | |
| CN108341395B (en) | Manufacturing method of MEMS device | |
| CN102417155B (en) | Production method of tri-axial accelerometer | |
| CN106032267B (en) | A kind of MEMS and preparation method thereof and electronic installation | |
| US20220306454A1 (en) | Composite spring structure to reinforce mechanical robustness of a mems device | |
| CN101959117B (en) | Manufacturing method of microphone | |
| CN103187379B (en) | Semiconductor stack structure and method for making thereof | |
| CN105236347A (en) | Semiconductor device, manufacturing method thereof, and electronic device | |
| CN104003350A (en) | Wafer-level vacuum packaging method of bulk silicon resonant pressure transducer | |
| CN103645343B (en) | multi-axis capacitive accelerometer | |
| CN101962165A (en) | Microbridge structure of micro-electromechanical system and manufacturing method thereof | |
| CN108203075B (en) | MEMS device, preparation method thereof and electronic device | |
| US20200140263A1 (en) | Reduced mems cavity gap |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170728 Address after: Singapore Ang Mo Kio 65 Street No. 10 techpoint Building 1 floor, No. 8 Co-patentee after: AAC Acoustic Technologies (Changzhou) Co.,Ltd. Patentee after: AAC TECHNOLOGIES Pte. Ltd. Address before: 518057 Nanshan District hi tech Industrial Park, Shenzhen, North West New West Road, No. Rui sound technology building, No. 18 Co-patentee before: AAC TECHNOLOGIES Pte. Ltd. Patentee before: AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) Co.,Ltd. Co-patentee before: AAC Acoustic Technologies (Changzhou) Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140326 Termination date: 20210817 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |