CN102446745A - Method for reducing cracking of dual-layer front metal dielectric substance layer - Google Patents
Method for reducing cracking of dual-layer front metal dielectric substance layer Download PDFInfo
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- CN102446745A CN102446745A CN2011103097344A CN201110309734A CN102446745A CN 102446745 A CN102446745 A CN 102446745A CN 2011103097344 A CN2011103097344 A CN 2011103097344A CN 201110309734 A CN201110309734 A CN 201110309734A CN 102446745 A CN102446745 A CN 102446745A
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Abstract
The invention provides a method for reducing cracking of a dual-layer front metal dielectric substance layer. The method comprises the steps of: 1, providing a substrate with an N/PMOS (N/P-channel Metal Oxide Semiconductor); 2, depositing a silicon nitride etching barrier layer on the substrate; 3, depositing a first front metal dielectric substance layer on the silicon nitride etching barrier layer; 4, carrying out oxygen-containing plasma processing on the first front metal dielectric substance layer; 5, depositing a second front metal dielectric substance layer on the first front metal dielectric substance layer; and 6, carrying out chemical mechanical grinding on the second front metal dielectric substance layer for reaching the design required thickness. After HDPPSG (High Density Plasma Phosphosilicate Glass) is deposited, the surface of the PSG is passivated by using oxygen-containing plasma, P content on the upper surface of the PSG is reduced, and the property of the film is closer to that of the silicon dioxide, thus adhesive property of the upper surface of the film and the lower surface of subsequent PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon dioxide is increased. The method is very practical.
Description
Technical field
The present invention relates to the field of semiconductor devices in a kind of semiconductor integrated circuit manufacturing, particularly a kind of method that reduces double-deck preceding metal and dielectric matter layer cracking.
Background technology
Along with the CMOS technology is pressed the mole law and high speed development, after the critical size of device had been contracted under the 90nm, deposition PMD need adopt high density plasma CVD (HDP CVD) to form usually.This method is to deposit simultaneously and etching, and it needs higher plasma density and more powerful radio-frequency power supply, and used radio-frequency power is more than 5000 watts usually.
Chinese patent CN01110119 discloses the manufacturing approach that a kind of dielectric layer between metal layers uniformity of improving high density plasma CVD method formed thereby is controlled not good situation; At first be to be manufactured with at the semiconductor-based end of a plurality of internal connecting lines, conformal formation one uniformity and the good thin PE-TEOS of tack.Then, on first oxide layer, form second oxide layer with the high-density plasma chemical vapor phase method, and insert the gap between those internal connecting lines.At last, on second oxide layer, form the 3rd oxide layer with the plasma enhanced chemical vapor deposition method again.According to the method for the invention, not only can reach splendid gap filling effect, can improve the situation of dielectric layer bad.
Chinese patent CN200480027564 relates to the method for blind in the semiconductor-based end.Substrate is provided in reative cell and contains the admixture of gas of at least a deuteride.Make the reaction of this admixture of gas and through the layer deposition of carrying out simultaneously be etched in and form material layer in the substrate.This material layer blind makes that the material in the slit is very close to each other basically.The present invention includes to provide and improve the inhomogeneity method of deposition rate.Material is at least a D that is selected from
2, HD, DT, T
2With the existence condition deposit of the gas of TH from the teeth outwards.Under the substantially the same in other respects condition of the extent of deviation that net deposition rate between depositional stage has across the surface with respect to using H
2The extent of deviation that deposition takes place has obtained detectable improvement.
Chinese patent CN03109044 provides a kind of embedded with metal internal connection-wire structure with double shielding layer, includes semiconductor wafer; One dielectric layer is located on this semiconductor wafer, is formed with one in this dielectric layer and inlays pothole; One bronze medal plain conductor is located at this and is inlayed in the pothole, and this copper plain conductor has the upper surface that a process CMP ground, and this upper surface is flushed with this dielectric layer approximately; And the pair of lamina protective layer, comprise that a HDPCVD silicon nitride layer and a doped silicon carbide (doped silicon carbide) upper strata is overlying on the upper surface of this copper plain conductor.This upper surface of this copper metal carbonyl conducting layer is after CMP grinds, with hydrogen gas plasma or the preliminary treatment of ammonia (ammonia) plasma.This high density plasma CVD silicon nitride layer is that high density plasma CVD (HDPCVD) the method deposition that is utilized under 350 ℃ forms.
Utilize the HDP method when forming PMD,, in actual production process, can cause damage, make its leakage current increase the reliability decrease of device grid oxic horizon because its plasma density is high, power is big and time growth is long.
In order to reduce before the deposition during metal and dielectric matter layer plasma to the damage of grid oxic horizon; Can adopt double-deck preceding layer metal deposition method; Wherein ground floor is the PSG (phosphorosilicate glass) of HDP method deposition, and the second layer is the SiO of plasma enhanced chemical vapor deposition method (PECVD) deposition
2, wherein the P among the HDP PSG mainly is used for catching the metal ion that is free in the device.
Yet these two kinds of films of different nature are bad its interface bonding, in follow-up procedure of processing process, are easy to generate the phenomenon of cracking.
Summary of the invention
In view of the above problems; The object of the present invention is to provide a kind of method that reduces double-deck preceding metal and dielectric matter layer cracking, the present invention utilizes oxygen containing plasma that Passivation Treatment is carried out on the PSG surface after HDP PSG deposition is accomplished; Reduced the P content of its upper surface; Make this layer film character more near and silicon dioxide, thereby increased the adhesive property of this layer film upper surface with follow-up PECVD silicon dioxide lower surface, be very suitable for practicality.
The object of the invention and solve its technical problem and adopt following technical scheme to realize.
A kind of method that reduces double-deck preceding metal and dielectric matter layer cracking that the present invention proposes, this processing step is following:
1) substrate with N/PMOS is provided;
2) deposited silicon nitride etch stop layer on substrate;
3) on the silicon nitride etch barrier layer deposition first before metal and dielectric matter layer;
4) the first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
5) before first, deposit the second preceding metal and dielectric matter layer on the metal and dielectric matter layer;
6) the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness;
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize:
Metal and dielectric matter layer is HDP PSG before said first, and wherein the content of phosphorus concentration is 2-8%, and thickness is 800～2000A.
The temperature of metal and dielectric matter layer is less than 500 ℃ before the said deposition first.
Metal and dielectric matter layer is that thickness is 3000～10000A by the not phosphorous silica membrane of PECVD method deposition before said second, and depositing temperature is 300～500 ℃.
Said when metal and dielectric matter layer before first is contained oxygen plasma treatment, containing oxygen plasma is one of following gas: O
3, O
2Perhaps N
2O.
Said metal and dielectric matter layer before first is contained oxygen plasma treatment, the processing time, scope was between 20～40s.
Said metal and dielectric matter layer before first is contained oxygen plasma treatment, the range of flow of oxygen-containing gas is: 20～50sccm.
Said metal and dielectric matter layer before first is contained oxygen plasma treatment, the range of flow of argon gas is: 100～200sccm.
Said metal and dielectric matter layer before first is contained oxygen plasma treatment, bottom radio frequency electric power range is: 3000～5000W.
Said metal and dielectric matter layer before first is contained oxygen plasma treatment, middle part radio frequency electric power range is: 1000～2000W.
Said metal and dielectric matter layer before first is contained oxygen plasma treatment, top radio frequency electric power range is: 2000～4000W.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification; And for let above-mentioned and other purposes of the present invention, feature and advantage can be more obviously understandable, below specially lifts preferred embodiment, specify as follows.
Description of drawings
Fig. 1 is a kind of flow chart that reduces the method for double-deck preceding metal and dielectric matter layer cracking of the present invention;
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with preferred embodiment, a kind of method that reduces double-deck preceding metal and dielectric matter layer cracking to proposing according to the present invention specifies as follows.
Different embodiments of the invention will details are as follows, with the different techniques characteristic of embodiment of the present invention, will be understood that, the unit of the specific embodiment of the following stated and configuration are in order to simplify the present invention, and it is merely example and does not limit the scope of the invention.
Embodiment 1
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 2%, and thickness is 900A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
2(flow is 20sccm) and Ar (flow is 150sccm)
Bottom radio frequency electrical power is: 3000W
Middle part radio frequency electrical power is: 1500W
Top radio frequency electrical power is: 2000W
Processing time is: 20 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 3000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 300 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 2
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 5%, and thickness is 1500A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
2(flow is 30sccm) and Ar (flow is 150sccm)
Bottom radio frequency electrical power is: 4500W
Middle part radio frequency electrical power is: 1800W
Top radio frequency electrical power is: 3000W
Processing time is: 30 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 5000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 400 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 3
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 6%, and thickness is 800A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
2(flow is 40sccm) and Ar (flow is 200sccm)
Bottom radio frequency electrical power is: 5000W
Middle part radio frequency electrical power is: 1500W
Top radio frequency electrical power is: 4000W
Processing time is: 35 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 8000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 450 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 4
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 8%, and thickness is 2000A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
2(flow is 50sccm) and Ar (flow is 200sccm)
Bottom radio frequency electrical power is: 5000W
Middle part radio frequency electrical power is: 2000W
Top radio frequency electrical power is: 2000W
Processing time is: 40 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 10000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 500 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 5
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 2%, and thickness is 900A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
3(flow is 20sccm) and Ar (flow is 150sccm)
Bottom radio frequency electrical power is: 3000W
Middle part radio frequency electrical power is: 1500W
Top radio frequency electrical power is: 2000W
Processing time is: 20 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 3000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 300 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 6
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 5%, and thickness is 1500A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
3(flow is 30sccm) and Ar (flow is 150sccm)
Bottom radio frequency electrical power is: 4500W
Middle part radio frequency electrical power is: 1800W
Top radio frequency electrical power is: 3000W
Processing time is: 30 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 5000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 400 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 7
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 6%, and thickness is 800A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
3(flow is 40sccm) and Ar (flow is 200sccm)
Bottom radio frequency electrical power is: 5000W
Middle part radio frequency electrical power is: 1500W
Top radio frequency electrical power is: 4000W
Processing time is: 35 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 8000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 450 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 8
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 8%, and thickness is 2000A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed O
3(flow is 50sccm) and Ar (flow is 200sccm)
Bottom radio frequency electrical power is: 5000W
Middle part radio frequency electrical power is: 2000W
Top radio frequency electrical power is: 2000W
Processing time is: 40 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 10000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 500 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 9
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 2%, and thickness is 900A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed N
2O (flow is 20sccm) and Ar (flow is 150sccm)
Bottom radio frequency electrical power is: 3000W
Middle part radio frequency electrical power is: 1500W
Top radio frequency electrical power is: 2000W
Processing time is: 20 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 3000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 300 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 10
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 5%, and thickness is 1500A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed N
2O (flow is 30sccm) and Ar (flow is 150sccm)
Bottom radio frequency electrical power is: 4500W
Middle part radio frequency electrical power is: 1800W
Top radio frequency electrical power is: 3000W
Processing time is: 30 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 5000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 400 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 11
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 6%, and thickness is 800A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed N
2O (flow is 40sccm) and Ar (flow is 200sccm)
Bottom radio frequency electrical power is: 5000W
Middle part radio frequency electrical power is: 1500W
Top radio frequency electrical power is: 4000W
Processing time is: 35 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 8000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 450 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
Embodiment 12
Substrate with N/PMOS at first is provided, again deposited silicon nitride etch stop layer on substrate; Metal and dielectric matter layer before on the silicon nitride etch barrier layer, depositing first then, the first preceding metal and dielectric matter layer is HDP PSG, and wherein the content of phosphorus concentration is 8%, and thickness is 2000A; The first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
The condition of Cement Composite Treated by Plasma is following:
Feed N
2O (flow is 50sccm) and Ar (flow is 200sccm)
Bottom radio frequency electrical power is: 5000W
Middle part radio frequency electrical power is: 2000W
Top radio frequency electrical power is: 2000W
Processing time is: 40 seconds
After accomplishing Cement Composite Treated by Plasma, the deposition second preceding metal and dielectric matter layer on the metal and dielectric matter layer before first, the second preceding metal and dielectric matter layer is that thickness is 10000A by the not phosphorous silica membrane of PECVD method deposition, depositing temperature is 500 ℃; At last the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
The object of the present invention is to provide a kind of method that reduces double-deck preceding metal and dielectric matter layer cracking; The present invention is after HDP PSG deposition is accomplished; Utilize oxygen containing plasma that Passivation Treatment is carried out on the PSG surface, reduced the P content of its upper surface, make this layer film character more near and silicon dioxide; Thereby increased the adhesive property of this layer film upper surface, be very suitable for practicality with follow-up PECVD silicon dioxide lower surface.
Through explanation, provided the exemplary embodiments of the ad hoc structure of embodiment.Although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.Any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (11)
1. one kind is reduced the method that double-deck preceding metal and dielectric matter layer ftractures, and it is characterized in that: this processing step is following:
1) substrate with N/PMOS is provided;
2) deposited silicon nitride etch stop layer on substrate;
3) on the silicon nitride etch barrier layer deposition first before metal and dielectric matter layer;
4) the first preceding metal and dielectric matter layer is carried out oxygen containing Cement Composite Treated by Plasma;
5) before first, deposit the second preceding metal and dielectric matter layer on the metal and dielectric matter layer;
6) the second preceding metal and dielectric matter layer is carried out cmp to reach designing requirement thickness.
2. a kind of method that reduces double-deck preceding metal and dielectric matter layer cracking as claimed in claim 1, it is characterized in that: metal and dielectric matter layer is HDP PSG before said first, and wherein the content of phosphorus concentration is 2-8%, and thickness is 800～2000A.
3. a kind of method that reduces double-deck preceding metal and dielectric matter layer cracking as claimed in claim 1, it is characterized in that: the temperature of metal and dielectric matter layer is less than 500 ℃ before the said deposition first.
4. a kind of method that reduces double-deck preceding metal and dielectric matter layer cracking as claimed in claim 1; It is characterized in that: metal and dielectric matter layer is the not phosphorous silica membrane by PECVD method deposition before said second; Thickness is 3000～10000A, and depositing temperature is 300～500 ℃.
5. as claimed in claim 1 a kind of reduce double-deck before the method for metal and dielectric matter layer cracking, it is characterized in that: said when metal and dielectric matter layer before first is contained oxygen plasma treatment, containing oxygen plasma is one of following gas: O
3, O
2Perhaps N
2O.
6. as claimed in claim 1 a kind of reduce double-deck before the method for metal and dielectric matter layer cracking, it is characterized in that: said metal and dielectric matter layer before first is contained oxygen plasma treatment, the processing time, scope was between 20～40s.
7. as claimed in claim 1 a kind of reduce double-deck before the method for metal and dielectric matter layer cracking, it is characterized in that: said metal and dielectric matter layer before first is contained oxygen plasma treatment, the range of flow of oxygen-containing gas is: 20～50sccm.
8. as claimed in claim 1 a kind of reduce double-deck before the method for metal and dielectric matter layer cracking, it is characterized in that: said metal and dielectric matter layer before first is contained oxygen plasma treatment, the range of flow of argon gas is: 100～200sccm.
9. as claimed in claim 1 a kind of reduce double-deck before the method for metal and dielectric matter layer cracking, it is characterized in that: said metal and dielectric matter layer before first is contained oxygen plasma treatment, bottom radio frequency electric power range is: 3000～5000W.
10. as claimed in claim 1 a kind of reduce double-deck before the method for metal and dielectric matter layer cracking, it is characterized in that: said metal and dielectric matter layer before first is contained oxygen plasma treatment, middle part radio frequency electric power range is: 1000～2000W.
11. as claimed in claim 1 a kind of reduce double-deck before the method for metal and dielectric matter layer cracking, it is characterized in that: said metal and dielectric matter layer before first is contained oxygen plasma treatment, top radio frequency electric power range is: 2000～4000W.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560080A (en) * | 2013-11-13 | 2014-02-05 | 上海华力微电子有限公司 | Method for reducing high-density plasma phosphorosilicate glass particles |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046103A (en) * | 1999-08-02 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Borderless contact process for a salicide devices |
| CN1377062A (en) * | 2001-03-27 | 2002-10-30 | 华邦电子股份有限公司 | Process for preparing dielectric layer between metal layers |
| US6479385B1 (en) * | 2000-05-31 | 2002-11-12 | Taiwan Semiconductor Manufacturing Company | Interlevel dielectric composite layer for insulation of polysilicon and metal structures |
| CN1495879A (en) * | 2002-07-24 | 2004-05-12 | 三星电子株式会社 | Method for making dual daascence interconnection of microelectronic device |
| CN1652309A (en) * | 2003-12-31 | 2005-08-10 | 台湾积体电路制造股份有限公司 | Heterogeneous low K dielectric and forming method thereof |
| CN1722387A (en) * | 2004-06-22 | 2006-01-18 | 东部亚南半导体株式会社 | Semiconductor devices and methods of manufacturing the same |
| KR20060073284A (en) * | 2004-12-24 | 2006-06-28 | 동부일렉트로닉스 주식회사 | Method for forming contact hole capable of removing polymer and method for manufacturing semiconductor device using the contact hole forming method |
| KR100646524B1 (en) * | 2005-12-28 | 2006-11-15 | 동부일렉트로닉스 주식회사 | Method of making semiconductor device |
-
2011
- 2011-10-13 CN CN2011103097344A patent/CN102446745A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046103A (en) * | 1999-08-02 | 2000-04-04 | Taiwan Semiconductor Manufacturing Company | Borderless contact process for a salicide devices |
| US6479385B1 (en) * | 2000-05-31 | 2002-11-12 | Taiwan Semiconductor Manufacturing Company | Interlevel dielectric composite layer for insulation of polysilicon and metal structures |
| CN1377062A (en) * | 2001-03-27 | 2002-10-30 | 华邦电子股份有限公司 | Process for preparing dielectric layer between metal layers |
| CN1495879A (en) * | 2002-07-24 | 2004-05-12 | 三星电子株式会社 | Method for making dual daascence interconnection of microelectronic device |
| CN1652309A (en) * | 2003-12-31 | 2005-08-10 | 台湾积体电路制造股份有限公司 | Heterogeneous low K dielectric and forming method thereof |
| CN1722387A (en) * | 2004-06-22 | 2006-01-18 | 东部亚南半导体株式会社 | Semiconductor devices and methods of manufacturing the same |
| KR20060073284A (en) * | 2004-12-24 | 2006-06-28 | 동부일렉트로닉스 주식회사 | Method for forming contact hole capable of removing polymer and method for manufacturing semiconductor device using the contact hole forming method |
| KR100646524B1 (en) * | 2005-12-28 | 2006-11-15 | 동부일렉트로닉스 주식회사 | Method of making semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560080A (en) * | 2013-11-13 | 2014-02-05 | 上海华力微电子有限公司 | Method for reducing high-density plasma phosphorosilicate glass particles |
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Application publication date: 20120509 |