CN102466969A - Dual-patterning method - Google Patents
Dual-patterning method Download PDFInfo
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- CN102466969A CN102466969A CN2010105536981A CN201010553698A CN102466969A CN 102466969 A CN102466969 A CN 102466969A CN 2010105536981 A CN2010105536981 A CN 2010105536981A CN 201010553698 A CN201010553698 A CN 201010553698A CN 102466969 A CN102466969 A CN 102466969A
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Abstract
The invention discloses a dual-patterning method which comprises the steps of: respectively providing a substrate and an embossing die, wherein a first photoetching glue layer is formed on the substrate, the embossing die is provided with a first pattern; embossing the first photoetching glue layer by using the embossing die, transferring the first pattern to the first photoetching glue layer; forming a second photoetching glue layer for covering the embossed first photoetching glue layer; and patterning the second photoetching glue layer and defining a second pattern. The invention is beneficial to improvement of pattering precision, reduction of pattern line width and increase of device integration level.
Description
Technical field
The present invention relates to semiconductor fabrication, relate in particular to a kind of double-pattern method.
Background technology
Semiconductor technology strides forward towards littler process node under the driving of Moore's Law constantly.Along with the continuous progress of semiconductor technology, the function of device is gradually become strong, but the semiconductor manufacture difficulty also grows with each passing day.And photoetching technique is a production technology the most key in the semiconductor fabrication process; Along with the semiconductor technology node enters into 65 nanometers, 45 nanometers; Even 32 lower nanometers; The ArF light source light lithography of existing 193nm can't satisfy the needs that semiconductor is made, and extreme ultraviolet light photoetching technique (EUV), multi-beam do not have the research focus that mask technique and nanometer embossing become photoetching candidate technologies of future generation.But above-mentioned photoetching candidate technologies of future generation still has inconvenience and defective, demands urgently further improving.
When the step that continues to extend forward when Moore's Law is irreversible; The double-pattern technology becomes the optimal selection of industry undoubtedly; Double-patternization technology only need be carried out very little change to existing photoetching infrastructure, just can fill up 45 nanometers effectively to 32 nanometers even the photoetching technique blank of minor node more.The principle of double-patternization technology with the highdensity circuitous pattern of a cover resolve into that two covers are discrete, the lower figure of density, then they are prepared on the wafer.
Fig. 1 to Fig. 4 is the sectional view of a kind of intermediate structure of double-pattern method in the prior art.
With reference to figure 1, substrate 10 is provided, in said substrate 10, form dielectric layer 11, on dielectric layer 11, form hard mask layer 12.On hard mask layer 12, form first photoresist layer, and first photoresist layer is carried out graphically defining first figure 13.
With reference to figure 2, be mask with patterned first photoresist layer, etching hard mask layer 12, corresponding first figure 13 is also transferred to hard mask layer 12.
With reference to figure 3, form second photoresist layer, cover said first figure and dielectric layer 11, second photoresist layer is carried out graphically defining second graph 14.
With reference to figure 4, be mask with first figure 13 with second graph 14, etching dielectric layer 11 arrives dielectric layer 11 with first figure 13 and the figure transfer that second graph 14 defines.
In the above-mentioned double-pattern method, the etching figure is converted into first figure 13 and second graph 14 separate, that density is lower, then it is transferred on the dielectric layer 11, make that the density of the exposure figure of photoresist is less each time.But the precision of above-mentioned double-pattern method still can't satisfy further process requirements, because the restriction of optical source wavelength in the exposure process makes that the live width of each exposure figure is bigger, influences the integrated level of device.
About more detailed contents of double-pattern method, please refer to the patent No. and be 6042998 United States Patent (USP).
Summary of the invention
The problem that the present invention solves is the lower problem of graphical precision, to reduce the live width of figure, improves the integrated level of device.
For addressing the above problem, the invention provides a kind of double-pattern method, comprising:
Substrate and impressing mould are provided respectively, are formed with first photoresist layer in the said substrate, said impressing mould has first figure;
Use said impressing mould that said first photoresist layer is impressed (imprint), with said first figure transfer to said first photoresist layer;
Form second photoresist layer, cover first photoresist layer behind the said impression;
Said second photoresist layer is carried out graphically defining second graph.
Optional, the said impressing mould of said use impresses said first photoresist layer and comprises: use said impressing mould that said first photoresist layer is carried out punching press; Remove said impressing mould; Said first photoresist layer is freezed (freeze).
Optional, saidly freeze to comprise to said first resist exposure and/or cure.
Optional, said said second photoresist layer is graphically comprised: said second photoresist layer is made public, define said second graph; Second photoresist layer to after the said exposure develops.
Optional, said double-pattern method also comprises: with first photoresist layer behind the said impression with graphical after second photoresist layer be mask, etching is carried out in said substrate.
Optional, being formed with anti-reflection layer in the said substrate, said first photoresist layer is positioned on the said anti-reflection layer.
Optional, being formed with hard mask layer at said the semiconductor-based end, said anti-reflection layer is positioned on the said hard mask layer.
Optional, said double-pattern method also comprises: with first photoresist layer behind the said impression with graphical after second photoresist layer be mask, said hard mask layer is carried out etching; With said hard mask layer is mask, and etching is carried out in said substrate.
Optional, the material of said hard mask layer is polysilicon, monox, silicon nitride, silit or metal.
Compared with prior art, the present invention has the following advantages:
The present technique scheme at first uses impressing mould that first photoresist layer is impressed, and on first figure transfer to the first photoresist layer, on first photoresist layer, forms second photoresist layer afterwards again; And second photoresist layer carried out graphically on second photoresist, defining second graph, owing to use impressing mould to impress; Thereby the restriction of exposure technology when having broken away from photoetching; Help improving patterned precision, reduce the figure live width, improve integrated level.
Description of drawings
Fig. 1 to Fig. 4 is the sectional view of the intermediate structure of prior art double-pattern method;
Fig. 5 is the schematic flow sheet of the double-pattern method of the embodiment of the invention;
Fig. 6 to Figure 12 is the sectional view of intermediate structure of the double-pattern method of the embodiment of the invention.
Embodiment
The double-pattern method of prior art is divided into density lower two independently behind the figure with exposure figure, makes public respectively, receives the restriction of exposure technology, and its graphical precision is still lower, can't satisfy further arts demand.
The present technique scheme at first uses impressing mould that first photoresist layer is impressed, and on first figure transfer to the first photoresist layer, on first photoresist layer, forms second photoresist layer afterwards again; And second photoresist layer carried out graphically on second photoresist, defining second graph, owing to use impressing mould to impress; Thereby the restriction of exposure technology when having broken away from photoetching; Help improving patterned precision, reduce the figure live width, improve integrated level.
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth detail in the following description so that make much of the present invention.But the present invention can be different from alternate manner described here and implements with multiple, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention does not receive the restriction of following disclosed embodiment.
Fig. 5 shows the schematic flow sheet of the double-pattern method of the embodiment of the invention, comprising:
Step S21 provides substrate and impressing mould respectively, is formed with first photoresist layer in the said substrate, and said impressing mould has first figure;
Step S22 uses said impressing mould that said first photoresist layer is impressed, with said first figure transfer to said first photoresist layer;
Step S23 forms second photoresist layer, covers first photoresist layer behind the said impression;
Step S24 carries out graphically defining second graph to said second photoresist layer.
Fig. 6 to Figure 12 shows the sectional view of intermediate structure of the double-pattern method of the embodiment of the invention, below in conjunction with Fig. 5 and Fig. 6 to Figure 12 embodiments of the invention is elaborated.
In conjunction with Fig. 5 and Fig. 6, execution in step S21 provides substrate and impressing mould respectively, is formed with first photoresist layer in the said substrate, and said impressing mould has first figure.Concrete, substrate 20 is provided, be formed with first photoresist layer 23 in the said substrate 20, in the present embodiment, be formed with hard mask layer 21 and anti-reflection layer 22 on the surface of said substrate 20 successively, said first photoresist layer 23 is positioned on the surface of anti-reflection layer 22.
Said substrate 20 is a semiconductor material; Can be monocrystalline silicon; Also can be silicon Germanium compound, can also be epitaxial layer structure on silicon-on-insulator (SOI, Silicon On Insulator) structure or the silicon; Wherein can also be formed with semiconductor devices such as MOS transistor, be coated with dielectric layer on the said semiconductor devices.The material of said hard mask layer 21 can be polysilicon, monox, silicon nitride, silit or metal.Said anti-reflection layer 22 can be the anti-reflection material that well known to a person skilled in the art in the photoetching process, repeats no more here.The formation method of said first photoresist layer 23 can be methods such as spin coating, spraying.
Said impressing mould 30 has first figure, and is concrete, is formed with protruding 30a on the said impressing mould 30, and said protruding 30a distributes and forms said first figure.
In conjunction with Fig. 5, Fig. 7 and Fig. 8, execution in step S22 uses said impressing mould that said first photoresist layer is impressed, with said first figure transfer to said first photoresist layer.
At first with reference to figure 7; Use 30 pairs of said first photoresist layers 23 of said impressing mould to impress; Make the protruding 30a of said impressing mould 30 embed in first photoresist layer 23, be noted that protruding 30a described in the moulding process needs to contact with said anti-reflection layer 22.
With reference to figure 8, after said moulding process, remove said impressing mould afterwards, thereby to realizing said first photoresist layer 23 is freezed afterwards, make its setting.The said process of freezing can be that first lithography layer 23 is made public and/or cures.Said exposure can be adopted ultraviolet exposure, and the temperature of confirming to cure according to the concrete material of photoresist layer 23 and composition, duration etc., thereby with on said first figure transfer to the first photoresist layer, forms first photoresist layer 23 behind the impression.
First figure on the said impressing mould can adopt method formation such as machining; It is very little that its live width can be made; Method through impression is carried out graphically first photoresist layer, has avoided the restriction of conventional exposure technology in the prior art, has improved patterned precision.In addition, the conventional photoetching process of first photoresist layer that impression back forms has better pattern, helps improving the pattern of the figure that the subsequent etching technological process forms.
In conjunction with Fig. 5 and Fig. 9, execution in step S23 forms second photoresist layer, covers first photoresist layer behind the said impression.Concrete; Form second photoresist layer 24; Cover first photoresist layer 23 behind the said impression; The formation method of said second photoresist layer 24 can be methods such as spin coating, spraying, and said second photoresist layer 24 is filled the groove that the impression back forms, and covers first photoresist layer 23 behind the said impression.
In conjunction with Fig. 5 and Figure 10, execution in step S24 carries out graphically defining second graph to said second photoresist layer.Concrete, said second photoresist layer 24 to be carried out graphically defining second graph, said graphical process can be the photoetching process of routine, mainly comprises: use mask that said second photoresist layer 24 is made public, define second graph; Afterwards second photoresist layer 24 after the said exposure is being developed, thereby accomplishing the graphical of second photoresist layer 24.The method of above-mentioned exposure and development sees also photoetching process commonly used in the prior art, just repeats no more here.Said first figure and second graph intert each other, have constituted actual figure to be formed jointly.
In the present embodiment, the method that the graphic method of said second photoresist layer 24 adopts exposure, develops, and do not have the method that adopts impression.Owing to need exert pressure to impressing mould in the moulding process; The method of therefore adopt exposure, developing has avoided moulding process to pressure and damage that first photoresist layer 23 of second photoresist layer, 24 belows causes, helps keeping the pattern of first figure on first photoresist layer 23.In addition, because said first photoresist layer 23 process after impression is freezed, therefore, processes such as the exposure of second photoresist layer 24, development can't impact first photoresist layer 23.
With reference to Figure 11; With first photoresist layer 23 behind the said impression with graphical after second photoresist layer 24 be mask; Said hard mask layer 21 is carried out etching with anti-reflection layer 22, said first figure and second graph are transferred to anti-reflection layer 22 and hard mask layer 21.
With reference to Figure 12, be mask with said hard mask layer 21, etching is carried out in said substrate 20, said first figure and second graph are transferred in the said substrate 20.Afterwards, remove said first photoresist layer 23, second photoresist layer 24, anti-reflection layer 22 and hard mask layer 21, accomplish the graphical process of said substrate 20.The removal method of said first photoresist layer 23, second photoresist layer 24 can be ashing method (ashing), or well known to a person skilled in the art additive method; The removal method of said anti-reflection layer 22 and hard mask layer 21 can be wet etching, dry etching etc.
In the foregoing description, first photoresist layer can't receive the exposure of second photoresist layer, the influence of developing process through after freezing, and helps keeping the pattern of first photoresist.
In addition, adopt the method for impression to carry out graphically to first photoresist layer in the foregoing description, make that the precision of first figure of formation is higher, live width is littler, and help improving the pattern of first figure of formation; The method of adopt exposure afterwards, developing is carried out graphically second photoresist layer; Avoided the damage of moulding process to first photoresist layer; Help keeping the pattern of first figure on first photoresist layer, and then improve the pattern that finally is formed on suprabasil figure.
Need to prove that in the foregoing description, in substrate, be formed with hard mask layer and anti-reflection layer, said first photoresist layer and second photoresist layer are formed on the said anti-reflection layer.But should be appreciated that; In other embodiments of the invention; Can said first photoresist layer be formed directly on the surface of substrate, after through impression, again second photoresist layer be formed on first photoresist layer; To said second photoresist layer graphical after, directly with first photoresist layer behind the said impression with graphical after second photoresist layer be that mask carries out etching to substrate 20; Or according to the difference of specific embodiment; Can only in said substrate, form in hard mask layer and the anti-reflection layer; As only in substrate, form hard mask layer; On said hard mask layer, form first photoresist layer afterwards and impress; The impression back forms second photoresist layer and second photoresist layer is carried out graphically on said first photoresist layer, be that mask carries out etching to said hard mask layer with first photoresist layer and second photoresist layer afterwards, is that mask carries out etching to said substrate with said hard mask layer more at last.
To sum up, the present technique scheme at first uses impressing mould that first photoresist layer is impressed, on first figure transfer to the first photoresist layer; On first photoresist layer, form second photoresist layer afterwards again, and second photoresist layer is carried out graphically on second photoresist, defining second graph; Owing to use impressing mould to impress, thereby the restriction of exposure technology when having broken away from photoetching helps improving patterned precision; Reduce the figure live width, improve integrated level.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can utilize the method and the technology contents of above-mentioned announcement that technical scheme of the present invention is made possible change and modification, therefore, every content that does not break away from technical scheme of the present invention; To any simple modification, equivalent variations and modification that above embodiment did, all belong to the protection domain of technical scheme of the present invention according to technical spirit of the present invention.
Claims (9)
1. a double-pattern method is characterized in that, comprising:
Substrate and impressing mould are provided respectively, are formed with first photoresist layer in the said substrate, said impressing mould has first figure;
Use said impressing mould that said first photoresist layer is impressed, with said first figure transfer to said first photoresist layer;
Form second photoresist layer, cover first photoresist layer behind the said impression;
Said second photoresist layer is carried out graphically defining second graph.
2. double-pattern method according to claim 1 is characterized in that, the said impressing mould of said use impresses said first photoresist layer and comprises: use said impressing mould that said first photoresist layer is carried out punching press; Remove said impressing mould; Said first photoresist layer is freezed.
3. double-pattern method according to claim 2 is characterized in that, saidly freezes to comprise to said first resist exposure and/or cures.
4. double-pattern method according to claim 1 is characterized in that, said said second photoresist layer is graphically comprised: said second photoresist layer is made public, define said second graph; Second photoresist layer to after the said exposure develops.
5. double-pattern method according to claim 1 is characterized in that, also comprises: with first photoresist layer behind the said impression with graphical after second photoresist layer be mask, etching is carried out in said substrate.
6. double-pattern method according to claim 1 is characterized in that, is formed with anti-reflection layer in the said substrate, and said first photoresist layer is positioned on the said anti-reflection layer.
7. double-pattern method according to claim 6 is characterized in that, is formed with hard mask layer at said the semiconductor-based end, and said anti-reflection layer is positioned on the said hard mask layer.
8. double-pattern method according to claim 7 is characterized in that, also comprises: with first photoresist layer behind the said impression with graphical after second photoresist layer be mask, said hard mask layer is carried out etching; With said hard mask layer is mask, and etching is carried out in said substrate.
9. double-pattern method according to claim 7 is characterized in that, the material of said hard mask layer is polysilicon, monox, silicon nitride, silit or metal.
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| CN2010105536981A CN102466969A (en) | 2010-11-19 | 2010-11-19 | Dual-patterning method |
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| CN102881567A (en) * | 2012-10-22 | 2013-01-16 | 上海集成电路研发中心有限公司 | Dual-diagramming method |
| CN102881565A (en) * | 2012-10-22 | 2013-01-16 | 上海集成电路研发中心有限公司 | Method for forming metal-oxide-metal (MOM) capacitor |
| CN104217942A (en) * | 2013-06-04 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of semiconductor device |
| CN108415219A (en) * | 2018-03-07 | 2018-08-17 | 京东方科技集团股份有限公司 | Functional film layer figure, display base plate and preparation method thereof, display device |
| CN110955119A (en) * | 2019-12-03 | 2020-04-03 | 浙江大学 | Vortex light far-field super-resolution repeated photoetching method |
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Cited By (8)
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|---|---|---|---|---|
| CN102881567A (en) * | 2012-10-22 | 2013-01-16 | 上海集成电路研发中心有限公司 | Dual-diagramming method |
| CN102881565A (en) * | 2012-10-22 | 2013-01-16 | 上海集成电路研发中心有限公司 | Method for forming metal-oxide-metal (MOM) capacitor |
| CN102881567B (en) * | 2012-10-22 | 2017-09-29 | 上海集成电路研发中心有限公司 | A kind of Double-patterning method |
| CN104217942A (en) * | 2013-06-04 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of semiconductor device |
| CN104217942B (en) * | 2013-06-04 | 2017-11-10 | 中芯国际集成电路制造(上海)有限公司 | A kind of manufacture method of semiconductor devices |
| CN108415219A (en) * | 2018-03-07 | 2018-08-17 | 京东方科技集团股份有限公司 | Functional film layer figure, display base plate and preparation method thereof, display device |
| CN108415219B (en) * | 2018-03-07 | 2021-05-18 | 京东方科技集团股份有限公司 | Functional film layer graph, display substrate, manufacturing method of display substrate and display device |
| CN110955119A (en) * | 2019-12-03 | 2020-04-03 | 浙江大学 | Vortex light far-field super-resolution repeated photoetching method |
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