CN102498568B - 制造全局快门像素传感器单元的结构和方法 - Google Patents
制造全局快门像素传感器单元的结构和方法 Download PDFInfo
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- CN102498568B CN102498568B CN201080041345.1A CN201080041345A CN102498568B CN 102498568 B CN102498568 B CN 102498568B CN 201080041345 A CN201080041345 A CN 201080041345A CN 102498568 B CN102498568 B CN 102498568B
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- 238000004519 manufacturing process Methods 0.000 claims abstract description 31
- 238000002161 passivation Methods 0.000 claims description 40
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/561,581 | 2009-09-17 | ||
US12/561,581 US8138531B2 (en) | 2009-09-17 | 2009-09-17 | Structures, design structures and methods of fabricating global shutter pixel sensor cells |
PCT/US2010/047599 WO2011034737A2 (en) | 2009-09-17 | 2010-09-02 | Structures, design structures and methods of fabricating global shutter pixel sensor cells |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102498568A CN102498568A (zh) | 2012-06-13 |
CN102498568B true CN102498568B (zh) | 2014-08-20 |
Family
ID=43729662
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080041345.1A Expired - Fee Related CN102498568B (zh) | 2009-09-17 | 2010-09-02 | 制造全局快门像素传感器单元的结构和方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8138531B2 (zh) |
JP (1) | JP5731513B2 (zh) |
CN (1) | CN102498568B (zh) |
DE (1) | DE112010003704B4 (zh) |
GB (1) | GB2486607B (zh) |
TW (1) | TWI493700B (zh) |
WO (1) | WO2011034737A2 (zh) |
Families Citing this family (16)
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US8637800B2 (en) | 2011-04-19 | 2014-01-28 | Altasens, Inc. | Image sensor with hybrid heterostructure |
KR20140047934A (ko) * | 2012-10-15 | 2014-04-23 | 삼성전자주식회사 | 3차원 이미지 센서 및 이의 제조 방법 |
JP2014096490A (ja) * | 2012-11-09 | 2014-05-22 | Sony Corp | 撮像素子、製造方法 |
JP2015012240A (ja) * | 2013-07-01 | 2015-01-19 | ソニー株式会社 | 撮像素子および電子機器 |
US9496304B2 (en) | 2013-08-15 | 2016-11-15 | Omnivision Technologies, Inc. | Image sensor pixel cell with switched deep trench isolation structure |
KR102114343B1 (ko) * | 2013-11-06 | 2020-05-22 | 삼성전자주식회사 | 센싱 픽셀 및 이를 포함하는 이미지 센서 |
JP6399301B2 (ja) * | 2014-11-25 | 2018-10-03 | セイコーエプソン株式会社 | 固体撮像装置およびその製造方法 |
JP6650668B2 (ja) * | 2014-12-16 | 2020-02-19 | キヤノン株式会社 | 固体撮像装置 |
US9865632B2 (en) | 2015-03-23 | 2018-01-09 | Tower Semiconductor Ltd. | Image sensor pixel with memory node having buried channel and diode portions formed on N-type substrate |
US9729810B2 (en) | 2015-03-23 | 2017-08-08 | Tower Semiconductor Ltd. | Image sensor pixel with memory node having buried channel and diode portions |
US9819883B2 (en) * | 2015-12-03 | 2017-11-14 | Omnivision Technologies, Inc. | Global shutter correction |
US9748330B2 (en) | 2016-01-11 | 2017-08-29 | Semiconductor Component Industries, Llc | Semiconductor device having self-isolating bulk substrate and method therefor |
US10026728B1 (en) | 2017-04-26 | 2018-07-17 | Semiconductor Components Industries, Llc | Semiconductor device having biasing structure for self-isolating buried layer and method therefor |
US10225498B2 (en) * | 2017-05-16 | 2019-03-05 | Bae Systems Information And Electronic Systems Integration Inc. | pMOS/nMOS pixel design for night vision imaging sensor |
US10224323B2 (en) | 2017-08-04 | 2019-03-05 | Semiconductor Components Industries, Llc | Isolation structure for semiconductor device having self-biasing buried layer and method therefor |
JP2019080081A (ja) * | 2019-02-14 | 2019-05-23 | 株式会社ニコン | 固体撮像素子および撮像装置 |
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-
2009
- 2009-09-17 US US12/561,581 patent/US8138531B2/en not_active Expired - Fee Related
-
2010
- 2010-09-02 CN CN201080041345.1A patent/CN102498568B/zh not_active Expired - Fee Related
- 2010-09-02 DE DE112010003704.3T patent/DE112010003704B4/de not_active Expired - Fee Related
- 2010-09-02 WO PCT/US2010/047599 patent/WO2011034737A2/en active Application Filing
- 2010-09-02 JP JP2012529794A patent/JP5731513B2/ja not_active Expired - Fee Related
- 2010-09-02 GB GB1204572.0A patent/GB2486607B/en not_active Expired - Fee Related
- 2010-09-10 TW TW099130731A patent/TWI493700B/zh not_active IP Right Cessation
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WO2008133144A1 (ja) * | 2007-04-18 | 2008-11-06 | Rosnes Corporation | 固体撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
US20110062542A1 (en) | 2011-03-17 |
WO2011034737A2 (en) | 2011-03-24 |
CN102498568A (zh) | 2012-06-13 |
DE112010003704T5 (de) | 2012-10-18 |
GB201204572D0 (en) | 2012-05-02 |
WO2011034737A3 (en) | 2011-06-30 |
JP2013505580A (ja) | 2013-02-14 |
DE112010003704B4 (de) | 2015-10-22 |
JP5731513B2 (ja) | 2015-06-10 |
TWI493700B (zh) | 2015-07-21 |
GB2486607B (en) | 2014-01-08 |
US8138531B2 (en) | 2012-03-20 |
TW201138079A (en) | 2011-11-01 |
GB2486607A (en) | 2012-06-20 |
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