CN102543102B - 使用pvd溅射碳膜作为阻挡层以形成磁记录头的镶嵌处理 - Google Patents
使用pvd溅射碳膜作为阻挡层以形成磁记录头的镶嵌处理 Download PDFInfo
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
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Abstract
本发明提供使用物理气相沉积(PVD)溅射碳膜作为化学机械平坦化(CMP)阻挡层以便形成磁记录头的镶嵌处理。在一个实施方式中,一种这样的处理包括提供绝缘体;去除绝缘体的一部分以在绝缘体内形成凹槽;使用物理气相沉积处理在绝缘体的第一部分上沉积碳材料;在绝缘体的第二部分上沉积至少一个铁磁材料以形成包括凹槽内的铁磁材料的一部分的极;以及使用碳材料的一部分作为用于化学机械平坦化的阻挡层在至少一个铁磁材料上进行化学机械平坦化。
Description
技术领域
本发明涉及磁记录技术,更具体地涉及使用物理气相沉积(PVD)以作为化学机械平坦化(CMP)阻挡层溅射碳膜以便形成磁记录头的镶嵌处理。
背景技术
现有的用于形成磁记录头的镶嵌处理包括化学机械平坦化(CMP)步骤以平坦化磁极的表面以及由此准确地控制用于磁记录头的磁极的高度。为了控制和限制化学积雪平坦化处理到特定深度,对应于磁极的高度,通常使用CMP阻挡层。美国专利No.7,444,740中进一步描述了现有的镶嵌技术,其整体内容在此通过引用并入。
在现有处理中,CMP层是使用化学气相沉积(CVD)或者等离子体增强化学气相沉积(PECVD)沉积的类金刚石(DLC)材料。然而,使用CVD或者PECVD沉积的DLC可导致沉积的DLC层的分层问题。更具体地,使用PECVD沉积的DLC对很多金属并且特别对通常在磁记录头中制造处理中使用的原子层沉积铝具有较差的粘性。使用PECVD沉积的DLC还具有很高的应力。作为使用PECVD沉积的DLC的这些问题的结果,磁记录头制造处理可经历大量的产量损失。因此,需要改进的镶嵌处理。
发明内容
本发明的方面涉及使用物理气相沉积(PVD)以作为化学机械平坦化(CMP)阻挡层溅射碳膜以便形成磁记录头的镶嵌处理。在一个实施方式中,本发明涉及一种用于沉积作为化学机械平坦化阻挡层的碳的方法,该方法包括:设置绝缘体;去除绝缘体的一部分以在绝缘体内形成凹槽;使用物理气相沉积处理在绝缘体的第一部分上沉积碳材料;在绝缘体的第二部分上沉积铁磁材料以形成包括凹槽内的铁磁材料的一部分的极;以及使用碳材料的一部分作为用于化学机械平坦化的阻挡层在至少一个铁磁材料上进行化学机械平坦化。
附图说明
图1是根据本发明的一个实施方式的形成磁记录头的处理的流程图,该处理包括使用物理气相沉积以沉积用于化学机械平坦化阻挡层的碳材料。
图2a-图2p是根据本发明的一个实施方式的形成磁记录头的处理的侧视图,该处理包括使用物理气相沉积以沉积用于化学机械平坦化阻挡层的碳材料。
图3a-图3b例示根据本发明的一个实施方式的形成磁记录头的另一个处理的流程图,该处理包括使用物理气相沉积以沉积用于化学机械平坦化阻挡层的碳材料。
具体实施方式
下面参照附图,例示通过使用物理气相沉积沉积作为化学机械平坦化阻挡层的碳材料的形成磁记录头的镶嵌处理的实施方式。处理可以在绝缘体衬底内形成凹槽,使用物理气相沉积处理在衬底的区域上沉积碳材料,在衬底的区域上布置磁材料以在凹槽内形成极,以及使用作为阻挡层的碳材料在磁材料上进行化学机械平坦化。在一些实施方式中,处理可以包括额外步骤,得到额外的层。在一些实施方式中,例如,使用也被沉积和图案化的各种光阻层沉积和图案化其它金属层。
使用PVD处理沉积的PVD碳层可提大量的改进性能。具体地,PVD碳可降低分层并且可具有比使用现有处理沉积的DLC更低的应力和更好的CMP率。另外,可使用比现有处理更便宜的工具制造PVD碳。PVD碳还具有比CVDDLC更好的粘性。具体地,CVDDLC对很多电介质和金属膜的粘性很差。具体地,PVD碳还具有更好的CMP率。在一个实施方式中,PVD碳的CMP率是CVDDLC的约五分之一。
尽管不受制于任何具体理论,相信由于PVD碳中比通常包括使用富氢甲烷气的CVD或者PECVDDLC中存在的更少百分比的氢,PVD碳提供更好的性能。例如,相信现有的CVDDLC处理得到具有约30%氢的材料,而PVD碳处理得到具有小于5%氢的材料。相信氢含量越高对CVDDLC中更高的应力负责。
类金刚石膜和PVD碳材料由SP2杂化和SP3杂化两者的碳原子组成。SP2原子类似于软石墨中的原子,SP3原子类似于硬金刚石中的原子。发现具有适当氢量的PECVD方法能够增加SP3碳含量。结果,可增加硬度、密度、抗磨阻力、和其它正面特征。PVD碳或者非晶碳材料的实验数据已经显示出硬度实际低,其可以对一些应用不期望。然而,PVD碳的应力和CMP研磨率很好。PVD碳对用于磁头制造的很多金属和氧化铝具有良好的粘性。结果,针对诸如用于形成磁记录头的镶嵌处理的特定应用,PVD碳或者非晶碳可以是一种更好的选择作为CMP阻挡层。在一些示例中,PVD碳可称为类金刚石碳。
在具体实施方式中引用措辞“在......上”。措辞“在......上”旨在相对广义理解。例如,在本申请的各个部分中,可以说第一层在第二层或者衬底上。在此上下文中,第一和第二层之间可以存在一个或者更多个中间层。
图1是根据本发明的一个实施方式的形成磁记录头的处理100的流程图,该处理包括使用物理气相沉积以沉积用于化学机械平坦化阻挡层的碳材料。处理首先提供(102)绝缘体。在多个实施方式中,绝缘体形成衬底并且包括氧化铝。处理接着去除(104)绝缘体的一部分以形成凹槽。在多个实施方式中,在绝缘体衬底上还沉积硬掩膜层之后使用反应离子蚀刻处理进行去除。在数个实施方式中,进行RIE处理从而以预选角度形成凹槽的边。
处理接着使用物理气相沉积(PVD)在绝缘体的第一部分上沉积(106)碳。在多个实施方式中,将随后使用PVD碳作为CMP阻挡层。在多个实施方式中,在沉积PVD碳层之前沉积和图案化光阻层以覆盖凹槽。处理接着在绝缘体的第二部分上沉积(108)铁磁或者磁材料以形成包括凹槽内的铁磁材料的一部分的磁极。在多个实施方式中,铁磁材料包括钴、镍和/或铁。在数个实施方式中,在沉积铁磁材料之前沉积粉碎缓冲层和电镀种子层。
处理接着使用PVD碳的一部分作为阻挡层在铁磁材料上进行化学机械平坦化(110)。在多个实施方式中,在CMP处理之前进行铁粉碎蚀刻处理以从超出凹槽的区域去除磁材料。在一些实施方式中,使用反应离子蚀刻处理可顺序地去除PVD碳层。另外,可进行随后处理步骤以按照现有技术完成磁记录头,如例如在美国专利No.7,444,740,中描述的,其整体内容在此通过应用并入。
在一个实施方式中,处理可以按照不同顺序进行动作序列。在另一个实施方式中,处理可以跳过一个或者更多个动作。在其它实施方式中,一个或者更多个工作同时进行。在一些实施方式中,可进行额外动作。
图2a-图2p是根据本发明的一个实施方式的形成磁记录头的处理的顺序侧视图,包括使用物理气相沉积以形成化学机械平坦化阻挡层。请注意磁记录头处理的层和部件不表示大小。
图2a示出磁记录头组件的基层210的侧视图,其中根据本发明的一个实施方式基层还在随后用作反应离子蚀刻(RIE)阻挡层。沉积和图案化基层210以采取图2a例示的形状。基层210可以是铬或者其它适当的材料。在多个实施方式中,铬基层是应用随后的氧化铝绝缘体衬底的蚀刻的反应离子蚀刻阻挡层。
图2b示出根据本发明的一个实施方式的在基层210上沉积了氧化铝层212之后的磁记录头组件的侧视图。在一个实施方式中,氧化铝层212是全膜氧化铝。在一些实施方式中,氧化铝层212沉积为2000埃(A)到4000A的厚度。在一些实施方式中,氧化铝层称为绝缘体或者绝缘体层。
图2c示出根据本发明的一个实施方式的在氧化铝层212上沉积了粘附层214之后的磁记录头组件的侧视图。粘附层可以是全膜钽或者其它适当材料。在这种情况下,钽可具有与氧化铝类似的反应离子蚀刻率,可在反应离子蚀刻处理中帮助准确形成用于创建磁极的凹槽。另外,粘性钽可增强氧化铝和诸如硬掩膜的其它层之间的粘附。
图2d示出根据本发明的一个实施方式的在粘附层210上沉积并且图案化了光阻层216之后的磁记录头组件的侧视图。光阻层216定位在期望用于凹槽的区域中靠近粘附层214上的磁记录头的中心。
图2e示出根据本发明的一个实施方式的在光阻层216和粘附层214上沉积硬掩膜层218接着从光阻层216侧去除之后的磁记录头组件的侧视图。在多个实施方式中,硬掩膜层218包括镍、铁和/或铬膜。在其它实施方式中,硬掩膜层218包括其它适当材料。在一些实施方式中,使用离子粉碎处理从光阻层侧去除硬掩膜层218。
图2f示出在已经去除光阻216这并且已经进行了氧化铝反应离子蚀刻处理以形成凹槽220之后的磁记录头组件的侧视图。在多个实施方式中,进行氧化铝反应离子蚀刻处理从而按照预选角度形成凹槽侧壁。
图2g示出根据本发明的一个实施方式的在使用原子层沉积处理形成薄控制层222之后的磁记录头组件的侧视图,其中使用薄层222以控制磁极的凹槽宽度。在硬掩膜层218上和在凹槽220内沉积薄控制层。
图2h示出根据本发明的一个实施方式的在薄原子层沉积(ALD)层222上沉积并且图案化了第二光阻层224以覆盖凹槽220之后的磁记录头组件的侧视图。
图2i根据本发明的一个实施方式的在使用物理气相沉积沉积了碳层226之后的磁记录头组件的侧视图,其中PVD碳层226可以是CMP阻挡层。在多个实施方式中,PVD碳材料沉积为约300A到800A的厚度。可使用聚集工具具有石墨(碳)目标的PVD碳。
在一个实施方式中,目标具有约12英寸的直径。PVD的腔压可以是约6mTorr,约80标准立方厘米每分钟(sccm)的氩气流。取决于期望的沉积速率,可应用约0.5千瓦(kW)到2kW的目标功率。可在目标的后部设置旋转磁控管以得到用于PVD碳层的良好的均匀性。在多个实施方式中,PVD碳层的均匀性对诸如产量的于制造效率很重要。用于获得良好均匀性的其它参数包括适当控制气流、气压、目标和衬底距离、后部磁控管构成、和/或其它类似参数。在没有旋转磁控管的一些实施方式中,可能需要大直径的目标。
图2j示出根据本发明的一个实施方式的在PVD碳层226上沉积粉碎缓冲层228之后的磁记录头组件的侧视图。在多个实施方式中,粉碎缓冲层包括氧化铝并且沉积为几千埃的厚度。
图2k示出根据本发明的一个实施方式的在去除第二光阻层224之后的磁记录头组件的侧视图。作为去除的结果,PVD碳层226和粉碎缓冲层228沿着超过凹槽220的区域保留。
图2l示出根据本发明的一个实施方式的在粉碎缓冲层228和在凹槽220内沉积电镀种子层230之后的磁记录头组件的侧视图。在多个实施方式中,使用电镀处理沉积或者布置电镀种子层230。在多个实施方式中,电镀种子层230包括钽和/或钌。
图2m示出根据本发明的一个实施方式的在电镀种子层230的顶上全膜电镀磁材料232的层之后的磁记录头组件的侧视图。在多个实施方式中,磁材料232包括钴、镍和/或铁。在其它实施方式中,磁材料232可包括或者被其它合适材料替代。在另一个实施方式中,直接沉积磁材料232的层而不沉积电镀种子层。
图2n示出根据本发明的一个实施方式的在磁材料层232上沉积并且图案化了第三光阻层234以大致覆盖凹槽区域之后的磁记录头组件的侧视图。
图2o示出根据本发明的一个实施方式的在离子粉碎蚀刻取出了磁材料层232的超出凹槽和电镀种子层230的部分并且已经去除了第三光阻层234之后的磁记录头组件的侧视图。
图2p示出根据本发明的一个实施方式的在使用化学机械平坦化(CMP)处理和作为CMP阻挡层的PVD碳层226平坦化了磁材料层232之后的磁记录头组件的侧视图。在数个实施方式中,在CMP处理之前沉积氧化铝的薄膜(例如,约0.6到1微米厚度)。在CMP处理之后,可利用反应离子蚀刻处理去除PVD碳层。另外,可进行随后处理步骤以按照现有技术完成磁记录头,如例如在美国专利No.7,444,740,中描述的,其整体内容在此通过应用并入。
在一个实施方式中,处理可以按照不同顺序进行动作序列。在另一个实施方式中,处理可以跳过一个或者更多个动作。在其它实施方式中,一个或者更多个工作同时进行。在一些实施方式中,可进行额外动作。
图3a-图3b例示根据本发明的一个实施方式的形成磁记录头的另一个处理300的流程图,该处理包括使用物理气相沉积以沉积用于化学机械平坦化阻挡层的碳材料。在具体实施方式中,处理300可对应于和/或结合图1和图2描述的处理进行。处理首先沉积和图案化(302)铬基层以用作氧化铝反应离子蚀刻(RIE)阻挡层。在一些实施方式中,铬基层可以由另一种适当材料形成和/或与其它适当材料组合。处理在基层上沉积(304)氧化铝作为绝缘体衬底。在其它实施方式中,绝缘体可以由另一种适当材料形成和/或与其它适当材料组合。在一个实施方式中,氧化铝作为全膜氧化铝沉积。在一些实施方式中,氧化铝沉积为约2000A到4000A的厚度。在一些实施方式中,氧化铝层称为绝缘体和/或绝缘体层。
处理接着沉积(306)作为粘附层的钽。在其它实施方式中,粘附层可由另一种适当材料形成和/或与其它适当材料组合。在一个实施方式中,钽可具有与氧化铝类似的反应离子蚀刻率,其在随后的反应离子蚀刻处理中有帮助。处理接着在期望用于凹槽的区域上沉积和图案化(308)光阻。处理接着沉积(310)镍、铁和铬膜以形成硬掩膜层。处理接着使用离子粉碎处理从光阻侧去除(312)NiFeCr。处理去除(314)光阻。处理接着用反应离子蚀刻(RIE)处理蚀刻(316)氧化铝以按照预选角度形成凹槽壁。处理接着使用原子层沉积来沉积(318)薄膜以控制凹槽宽度。薄膜可包括氧化铝或者其它适当材料。
处理接着沉积和图案化(320)第二光阻层以大致覆盖凹槽。处理接着使用物理气相沉积(PVD)沉积(322)碳作为CMP阻挡层。在多个实施方式中,PVD碳材料沉积为约300A到800A的厚度。可使用聚集工具具有石墨(碳)目标的PVD碳。在一个实施方式中,目标具有约12英寸的直径。PVD的腔压可以是约6mTorr,约80标准立方厘米每分钟(sccm)的氩气流。取决于期望的沉积速率,可应用约0.5kW到2kW的目标功率。可在目标的后部设置旋转磁控管以得到用于PVD碳层的良好的均匀性。在多个实施方式中,PVD碳层的均匀性对诸如产量的于制造效率很重要。用于获得良好均匀性的其它参数包括适当控制气流、气压、目标和衬底距离、后部磁控管构成、和/或其它类似参数。
参照图3b,处理沉积(324)氧化铝薄层以用作粉碎缓冲层。在多个实施方式中,粉碎缓冲层并且沉积为几千埃的厚度。处理接着去除(326)第二光阻层。处理沉积(328)包括钽和钌的电镀种子层。在多个实施方式中,电镀种子层可包括其它适当的材料。在数个实施方式中,使用电镀处理沉积电镀种子层。处理接着进行全膜电镀(330)用于磁极的磁材料。在多个实施方式中,磁材料或者铁磁材料包括钴、镍和/或铁。磁材料的一部分沉积在凹槽内。
处理接着沉积和图案化(332)第三光阻层以大致覆盖极凹槽区域。处理接着使用离子粉碎蚀刻处理从超出凹槽的区域去除(334)电镀极磁材料。处理沉积(336)氧化铝薄层。氧化铝薄层可帮助确保工件的顶表面在平坦化之前相对平坦并且均匀。在数个实施方式中,氧化铝薄层是约0.6到1微米厚度。处理接着用PVD碳层用作阻挡层进行化学机械平坦化(338)以使极磁材料大致平坦。处理接着使用反应离子蚀刻处理去除(340)PVD碳层。
在一个实施方式中,处理可以按照不同顺序进行动作序列。在另一个实施方式中,处理可以跳过一个或者更多个动作。在其它实施方式中,一个或者更多个工作同时进行。在一些实施方式中,可进行额外动作。
尽管以上描述包含本发明的很多具体实施方式,这些不应认为是本发明的范围的限制,而是其具体实施方式的示例。因此,本发明的范围应不根据例示的实施方式确定,而根据所附的权利要求和等同物确定。
描述了用于形成磁记录头的使用PVD沉积用于化学机械平坦化阻挡层的碳的处理。在其它实施方式中,此处描述的使用PVD沉积用于化学机械平坦化阻挡层的碳的处理可结合其它应用使用。例如,在一个实施方式中,PVD碳处理可用于制造磁存储装置中的读取器或者写入器的处理中提供硬掩膜层。在另一个实施方式中,PVD碳处理可用于提供粘附层。例如,在一个这种情况下,PVD碳处理提供薄的粘附层接着在粘附层上设置光阻层。在这种情况下,薄PVD碳粘附层增加光阻层的形状的准确性。
Claims (20)
1.一种用于沉积作为化学机械平坦化阻挡层的碳的方法,所述方法包括:
提供第一绝缘体;
去除所述绝缘体的一部分以在所述第一绝缘体内形成凹槽;
使用原子层沉积沿所述凹槽并在所述第一绝缘体超出所述凹槽的部分上连续地沉积第二绝缘体;
沉积覆盖所述凹槽的第一图案化光阻层;
使用物理气相沉积处理在所述第二绝缘体的第一部分和所述第一光阻层上直接沉积碳材料;
去除所述第一光阻层;
在所述第二绝缘体的第二部分上沉积至少一个铁磁材料以形成包括所述铁磁材料在所述凹槽内的部分的极;以及
使用所述碳材料的一部分作为用于化学机械平坦化的阻挡层在所述至少一个铁磁材料上进行化学机械平坦化。
2.根据权利要求1所述的方法,所述方法还包括:
使用反应离子蚀刻处理去除所述碳材料。
3.根据权利要求2所述的方法,其中提供所述第一绝缘体包括:
提供所述第一绝缘体;以及
在所述第一绝缘体上沉积粘附层。
4.根据权利要求3所述的方法,其中在所述第一绝缘体上沉积所述粘附层包括:
在所述第一绝缘体上沉积所述粘附层;以及
在所述粘附层的部分上沉积至少一个硬掩膜,所述至少一个硬掩膜中具有孔,其中所述凹槽在所述孔下方形成。
5.根据权利要求4所述的方法,其中在所述粘附层上沉积所述至少一个硬掩膜包括:
沉积第二图案化光阻层;
在所述粘附层和所述第二图案化光阻层上沉积所述至少一个硬掩膜;
从所述第二光阻层的顶表面去除所述硬掩膜;以及
去除所述第二光阻层。
6.根据权利要求4所述的方法,其中在所述粘附层的部分上沉积所述至少一个硬掩膜包括:
在所述粘附层的部分上沉积所述至少一个硬掩膜,以及
在所述至少一个硬掩膜和所述凹槽上沉积所述第二绝缘体。
7.根据权利要求6所述的方法,使用物理气相沉积处理在所述第二绝缘体的第一部分和所述第一光阻层上直接沉积所述碳材料包括:
使用物理气相沉积处理在所述第二绝缘体的第一部分和所述第一光阻层上直接沉积所述碳材料;以及
在所述碳材料层上沉积缓冲层。
8.根据权利要求7所述的方法,其中使用物理气相沉积处理在所述第二绝缘体的第一部分和所述第一光阻层上直接沉积所述碳材料包括:
使用物理气相沉积处理在所述第二绝缘体的第一部分和所述第一光阻层上直接沉积所述碳材料;
在所述碳材料层上沉积缓冲层;和
去除所述缓冲层、所述碳材料层和所述第一光阻层。
9.根据权利要求7所述的方法,其中在所述碳材料层上沉积所述缓冲层包括:
在所述碳材料层上沉积所述缓冲层;以及
在所述缓冲层和在所述第二绝缘体的第二部分上沉积电镀种子层。
10.根据权利要求9所述的方法,其中提供所述绝缘体包括:
在反应离子蚀刻阻挡层上沉积所述第一绝缘体。
11.根据权利要求10所述的方法,
其中所述第一绝缘体包括氧化铝,以及
其中所述至少一个铁磁材料包括镍、铁、和钴中的至少之一种。
12.根据权利要求11所述的方法,
其中所述粘附层包括钽,
其中所述至少一个硬掩膜包括镍、和铁中的至少一种,
其中所述缓冲层包括氧化铝,
其中所述电镀种子层包括钽和钌中的至少之一种,以及
其中所述反应离子蚀刻阻挡层包括铬、镍、和铁。
13.根据权利要求1所述的方法,其中使用物理气相沉积处理在所述第二绝缘体的第一部分和所述第一光阻层上直接沉积所述碳材料包括:
使用物理气相沉积处理在所述第二绝缘体的第一部分和所述第一光阻层上直接沉积碳材料,包括提供接近目标定位的配置用于发射所述碳材料的旋转磁控管。
14.根据权利要求13所述的方法,其中所述目标定位在所述旋转磁控管和所述第二绝缘体之间。
15.根据权利要求13所述的方法,其中所述旋转磁控管配置用于在所述第二绝缘体的部分上提供大致均匀的所述碳材料。
16.根据权利要求1所述的方法,其中使用物理气相沉积处理沉积的所述碳材料的应力低于使用化学气相沉积处理沉积的碳材料的应力。
17.根据权利要求1所述的方法,其中使用物理气相沉积处理沉积的所述碳材料的化学机械平坦化的速率低于使用化学气相沉积处理沉积的碳材料的化学机械平坦化的速率。
18.根据权利要求1所述的方法,其中在所述第二绝缘体的第二部分上沉积至少一个铁磁材料以形成包括所述铁磁材料在所述凹槽内的部分的极包括在所述第二绝缘体的第二部分上电镀至少一个铁磁材料以形成包括所述铁磁材料在所述凹槽内的部分的极。
19.根据权利要求1所述的方法,其中所述第一绝缘体和所述第二绝缘体每个包括氧化铝。
20.根据权利要求1所述的方法,所述碳材料保留在超出所述凹槽的区域上。
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CN102543102A (zh) | 2012-07-04 |
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