CN102544264A - Method for preparing nano pattern on sapphire substrate - Google Patents
Method for preparing nano pattern on sapphire substrate Download PDFInfo
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- CN102544264A CN102544264A CN2012100173887A CN201210017388A CN102544264A CN 102544264 A CN102544264 A CN 102544264A CN 2012100173887 A CN2012100173887 A CN 2012100173887A CN 201210017388 A CN201210017388 A CN 201210017388A CN 102544264 A CN102544264 A CN 102544264A
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Abstract
The invention discloses a method for preparing a nano pattern on a sapphire substrate, which comprises the following steps: (1) selecting a clean sapphire substrate, coating hexamethyldisilazane on the surface of the substrate, and baking to completely react; (2) coating an ultraviolet curing nanoimprint lithography glue material to form a nanoimprint lithography glue layer; (3) pressing the imprinting template into the imprinting adhesive layer, carrying out ultraviolet exposure, and removing the imprinting template after the exposure is finished; (4) etching to remove the nanoimprint lithography glue residual layer and expose the sapphire substrate; (5) etching the sapphire substrate by using the nanoimprint lithography glue layer as an etching mask; (6) and etching to remove the nanoimprint glue layer, thus obtaining the nano-patterned sapphire substrate. The invention omits the prior complex process of firstly depositing a silicon dioxide transition layer on the sapphire substrate as a mask, greatly simplifies the preparation process, reduces the preparation difficulty and cost and is easier to realize industrialized application.
Description
Technical field
The present invention relates to a kind of method that on Sapphire Substrate, prepares nano-pattern, belong to the micro-nano manufacture field.
Background technology
Compare with traditional bulb and existing electricity-saving lamp; Light-emitting diode (LED) illumination has the low power consumption characteristic of life-span length, low current, low driving voltage; And have advantages such as environmental protection, volume is little, response is fast, applied to every field such as communication, electronics, automobile, demonstration widely.Current, further reduce the manufacturing cost of LED, improve luminous efficiency and the light extraction efficiency of LED, be one of main challenge of facing of LED industry.
Backing material is the basis of LED semiconductive luminescent materials gallium nitride (GaN) homepitaxy growth; At present; The most general substrate that is used for the gallium nitride growth is a Sapphire Substrate; Be the alundum (Al crystal, its advantage is that chemical stability is good, not absorb visible light, moderate cost, manufacturing technology ripe relatively.In order to improve the luminous efficiency of LED; On the one hand can be through improving the epitaxially grown technology of gallium nitride material, the interior quantum effect that improves gallium nitride material realizes, it is found that on the other hand and on Sapphire Substrate, designs and produce micron order or nano level regular pattern with specific concaveconvex structure; Can be with the light output form of control LED; Relief pattern on the Sapphire Substrate can produce the effect of light reflection, scattering or refraction, increases the extraction efficiency of light with this, and these convex and concave patterns structures can also reduce the dislocation defects of gallium nitride material transversal epitaxial growth simultaneously; Promote the quality of gallium nitride, and improve the luminous internal quantum efficiency of LED.
The researcher of Japan has made the micron pattern of regular convex-concave structure at first on Sapphire Substrate with the technology of photoetching technique combined chloride radical reaction ion dry etching; Behind the epitaxial growth of gallium nitride indium; Compare with patternless substrate; Luminous efficiency and luminous intensity all have increased significantly (referring to High output power InGaN ultraviolet lightemittingdiodes fabricated on atterned substrates using metalorganicvapor phase epitaxy, Japanese Journal of Applied Physics, Vol. 40; Pp. L583,2001).Korea S researchers in 2005 adopt the mixed solution of sulfuric acid and hydrochloric acid; Method through wet etching has realized that on Sapphire Substrate patterning is (referring to Vertical electrode GaN-based light-emitting diode fabricated by selective wet etching technique; Japanese Journal of Applied Physics; Vol. 44, pp. 2921,2005).Theoretical research shows, when the pattern dimensions of convex-concave structure reaches sub-wavelength, promptly below 500 nanometers, even more hour, the taking-up efficient of light will be far above the patterned sapphire substrate of micro-meter scale.But but photoetching techniques such as the contact of industrialization at present, projection can only be made the above pattern of micro-meter scale, and are used for the stepping photoetching technique of semicon industry, because its cost is very expensive, can't be accepted by the LED industry.
To the problems referred to above; The researcher of Princeton university adopts the method for nano impression on sapphire, to produce the lattice structure patterned sapphire substrate of cycles 200 nanometers; Behind the epitaxial growth of gallium nitride; Its luminous intensity is compared with the patterned substrate of micro-meter scale with luminous efficiency and has been had and significantly promotes (referring to Extraction Efficiency Improvement of GaN Light-emitting Diode Using Sub-wavelength Nanoimprinted Patterns on Sapphire Substrate, OSA/ CLEO 2011).
Yet; There is following problem in said method: (1) nanometer embossing is the working mechanism of physics contact, therefore will seek template to can be good at fitting and contacting with substrate, but compare with general silicon chip substrate commonly used; The surface undulation of Sapphire Substrate is big, the warpage rate is high; For traditional hard impression block, need impose severe pressure fits tightly template and substrate, and big impression pressure not only possibly damage expensive template, also can cause the Sapphire Substrate of fragility cracked; (2) no matter be photoetching or nanometer embossing at present, using etching technics, particularly during wet-etching technology; All must (this be because sapphire surface can adsorbed water molecule in air ambient depositing layer of silicon dioxide on the Sapphire Substrate again; When wet etching, like no silicon dioxide transition zone, then etching liquid can be penetrated between glue-line and the substrate through the hydrone of absorption; And peel off glue-line from substrate; The effect of mask can't recur), through dry etching patterning is delivered to silicon dioxide layer earlier, be mask again with silicon dioxide; Further be delivered to patterning on the Sapphire Substrate, this technology has increased the cost and the complexity of Sapphire Substrate patterning.
Summary of the invention
Goal of the invention of the present invention provides a kind of method that on Sapphire Substrate, prepares nano-pattern, to realize the nanoscale patternsization of Sapphire Substrate.
For reaching the foregoing invention purpose, the technical scheme that the present invention adopts is: a kind of method that on Sapphire Substrate, prepares nano-pattern comprises the steps:
(1) choose clean Sapphire Substrate substrate, at its surface coated HMDS, baking reacts completely it;
(2) coating ultraviolet light curing nano impression glue material forms the impression glue-line; The viscosity of said ultraviolet light curing nano impression glue material is 1000 ~ 10000 centipoises, and it comprises polyfunctional acrylic ester prepolymer, light trigger and bonding promoter, and said bonding promoter is binded promoter for the acrylic acid ester polyester;
(3) impression block is pressed into above-mentioned impression glue-line, uv-exposure is removed impression block behind the end exposure; Said impression block is the flexible nano impression block of two-layer composite, and its upper strata is flexible macromolecular elastomer substrate, and the Young's modulus scope is at 1 ~ 5N/mm
2, its thickness is 0.1 ~ 3mm; Lower floor is the photocuring high molecular nanometer patterned layer of rigidity, and the Young's modulus scope is at 10N/mm
2More than, its thickness is 30 ~ 500nm;
(4) etching is removed nano impression glue remnant layer, exposes Sapphire Substrate;
(5) with the nano impression glue-line as etch mask, the etching Sapphire Substrate;
(6) etching is removed the nano impression glue-line, can obtain the nano-patterning Sapphire Substrate.
In the preceding text; Said impression glue material is made up of the acrylic ester prepolymer of the polyfunctionality of uV curable; Particularly added the acrylic ester prepolymer strong with the backing material adhesiveness, preferred U.S. Sartomer company binds to ultraviolet photocureable material and smooth surface and the acrylated polyesters type adhesion promoter that designs each other.
The flexible nano impression block of said two-layer composite is a prior art, and (Nanoletters 2009,9 (6), 2306-2310) with patent ZL200810195525.X referring to document; This template organically combines the advantage of the flexibility of the high-resolution of nano impression rigid template and soft impression Elastic forming board, and template is made up of macromolecular material fully, has reduced the preparation cost of high-resolution impression block.The resiliency supported layer of template has adopted soft impression block PDMS material commonly used, makes no impressed pressure condition lower bolster and impression substrate to fit tightly; Rigidity stamping structure layer is made up of ultra-thin highly cross-linked ultraviolet photocureable material, and excellent mechanical intensity not only is provided, and impresses out high-resolution nanostructure, and breaking of having avoided effectively that template causes in the height BENDING PROCESS, crackle etc.Reach the tight bonding of resiliency supported layer and rigid structural layer between the double-deck interface of template through the macromolecule inierpeneirating network structure.Because the Sapphire Substrate surface undulation is big; The warpage rate is high; The characteristics of composite Nano impression block are highly suitable for carries out nano impression on the Sapphire Substrate, so adopts the composite Nano stamping technique on Sapphire Substrate, to prepare the patterning of nanoscale among the present invention.
Before nano impression glue gluing, (Hexamethyl Disilazane HMDS) carries out preliminary treatment to Sapphire Substrate with HMDS earlier; HMDS is the increase photoresist used always and the adhesive agent of silicon substrate; It consumes the adsorbed water of substrate surface through hydrolysis, and further reacts with the hydroxyl of surface of silicon; Form trimethicone, stop hydrone to be adsorbed onto on the substrate once more.For Sapphire Substrate, HMDS equally also has well removes adsorbed water, strengthens impression glue-line and the adhering effect of Sapphire Substrate.Wet etching on Sapphire Substrate generally adopts the mixed acid of sulfuric acid and phosphoric acid, under the high temperature more than 300 ℃, carries out; Etch rate can reach more than 0.6 micron/minute; Because what the present invention relates to is the patterning preparation of nanoscale, temperature is too high, etch rate is too fast, then is difficult to the pattern and size of the pattern of the required nanoscale of control; Wet etching continues under the etching at high temperature simultaneously; Because gaseous volatilization causes etching liquid concentration to rise, make that etching rate continues to change, etching stable bad.Wet etching of the present invention is to carry out under 90 ℃ the condition in temperature; Etch rate reaches 2 nm/minute; Though etch rate is slow during than 300 ℃; But the patterning for nanoscale is more easy to control, and lower temperature has also guaranteed the nano impression glue material as the tolerance of etch mask in acid etching liquid, can avoid the volatile problem of acid etching solution under the high temperature simultaneously.
In the technique scheme, in the said step (4), adopt O
2Reactive ion etching process is removed nano impression glue remnant layer.
In the technique scheme, in the said step (5), adopt the wet etching Sapphire Substrate; Adopt the mixed acid of sulfuric acid and phosphoric acid, etching temperature is 90 ℃ or less than 90 ℃, etch rate is 1 ~ 2 nm/minute.
Perhaps, in the said step (5), adopt Cl
2Reactive ion etching process dry etching Sapphire Substrate.
In the technique scheme, in the said step (6), adopt O
2Reactive ion etching process is removed the nano impression glue-line.
Preferably, in the said step (3), the upper strata of the flexible nano impression block of said two-layer composite is flexible macromolecular elastomer substrate, and the Young's modulus scope is at 1 ~ 5N/mm
2, its thickness is 0.1 ~ 2mm; Lower floor is the photocuring high molecular nanometer patterned layer of rigidity, and the Young's modulus scope is at 20N/mm
2More than, its thickness is 50 ~ 500nm.
In the technique scheme, in the said step (3), the two-layer up and down of the flexible nano impression block of said two-layer composite combined closely through bonding or chemical bond.
In the technique scheme, in the said step (3), photocuring high molecular nanometer patterned laminar surface bonding one deck low-surface-energy of the rigidity of said impression block lower floor is fluoridized organic molecule or macromolecule adherent layer.Thereby in printing process, avoid damaged template, reach the effect of template and substrate good separation.In the nothing pressure or under less than 0.01 atmospheric pressure, the compliance that compound impression block is good has guaranteed that template and Sapphire Substrate can form applying closely.
In the technique scheme, in the said step (3), when impression block was pressed into the impression glue-line, its external pressure was less than 0.01 atmospheric pressure or do not have external pressure.
In the preceding text, in mass, said ultraviolet light curing nano impression glue material comprises 2 ~ 60% polyfunctional acrylic ester prepolymer, 40 ~ 98% solvent, and 0.5 ~ 5% the ultraviolet light radical initiator that accounts for polyfunctional acrylic ester prepolymer total amount;
Said polyfunctional acrylic ester prepolymer comprises the acrylate group of two or more addition polymerizations; The polyfunctional acrylic ester prepolymer at room temperature presents liquid condition; Its viscosity is 1000 ~ 10000 centipoises; Its polarity is standard with the water droplet surface contact angle that it solidifies caudacoria, and its contact angle is 45 ~ 90 degree; Preferred epoxy acrylic ester prepolymer, polyurethane acrylate prepolymer, polyester acrylic ester prepolymer, tetramethylol methane tetraacrylate, pentaerythritol triacrylate etc.
Said solvent is non-reacted solvent or reactive monomer; Said non-reacted solvent is selected from one or more in glycol monoethyl ether, chlorobenzene, toluene, xylenes, acetone, MEK, methyl iso-butyl ketone (MIBK), formic acid esters, ethyl acetate, the dimethyl formamide; Said reactive monomer comprises one or more in methyl methacrylate, methyl acrylate, ethyl acrylate, propyl acrylate, the butyl acrylate;
Said ultraviolet light radical initiator is selected from one or more in benzophenone, 4-methyldiphenyl ketone, the styrax methyl ether.
Because the technique scheme utilization, the present invention compared with prior art has advantage:
1. a kind of method that on Sapphire Substrate, prepares nano-pattern of proposing of the present invention; Employing has the impression glue-line of nano-pattern structure directly as etching; Particularly the mask of wet etching had omitted in the past and need on Sapphire Substrate, deposit the complex process of layer of silicon dioxide transition zone as mask earlier, had simplified preparation technology greatly; Reduce preparation difficulty and cost, more be prone to realize commercial application.
2, the present invention has adopted the flexible nano impression block of two-layer composite; Can be big in surface undulation, prepare nano-pattern on the Sapphire Substrate that the warpage rate is high; Need not exert pressure or only apply less than 0.01 atmospheric pressure; Avoid the hard template and the under high pressure easy chipping problem of Sapphire Substrate of fragility, had positive meaning.
3, the present invention adopts same template with convex-concave pattern structure of specific period, shape; Can be on substrate in batches copy pattern with opposite convex-concave structure; As long as design suitable template, that just can be on Sapphire Substrate repeats fully copies the nano-pattern with identical parameters, and technology is simple, cost is low, efficient is high; Repeat reliably, be fit to produce in enormous quantities.
Description of drawings
Fig. 1 is the process schematic representation of the embodiment of the invention one;
Fig. 2 is the 200 nanometer cycles that on Sapphire Substrate, impress in the embodiment of the invention one, the lattice structure of 140nm diameter;
Fig. 3 is the 500 nanometer cycles that on Sapphire Substrate, prepare in the embodiment of the invention one, the lattice structure of 165nm diameter.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further described:
Embodiment one
Shown in Fig. 1 ~ 3, a kind of method that on Sapphire Substrate, prepares nano-pattern comprises the steps:
(1) chooses clean Sapphire Substrate substrate;
(2) coating adhesive agent HMDS: with first commentaries on classics 600rpm/10sec, 3000rpm/30sec coating adhesive agent is changeed at the end, and 110 ℃ of baking 2min react completely it;
(3) the above-mentioned ultraviolet light curing nano impression of coating glue material: with first commentaries on classics 1000rpm/10sec, 3000rpm/20sec is changeed at the end, coating ultraviolet light curing nano impression glue material;
(4) uv-exposure impression: the composite Nano impression block is placed on the substrate that has applied impression glue uv-exposure, exposure dose 300mJ/cm
2, end exposure is removed template;
(5) O
2Reactive ion etching process is removed nano impression glue remnant layer, exposes Sapphire Substrate;
(6) wet etching Sapphire Substrate: 90 ℃ of temperature, with the solution etching Sapphire Substrate of phosphoric acid and sulfuric acid 1:3 ratio, etch period is looked etching depth and is decided;
(7) O
2Reactive ion etching process is removed the nano impression glue-line as etch mask, obtains the nano-patterning Sapphire Substrate.
In the said step (3); Adopt the polyfunctional acrylic ester prepolymer to impress glue material as ultraviolet light curing nano; It specifically consists of: the acrylic acid ester polyester of mass percent 3% binds promoter (U.S. Sartomer company), is mainly used in the adhesion property that increases impression glue-line and Sapphire Substrate; The tetramethylol methane tetraacrylate of 4 degrees of functionality of mass percent 2%, the acrylic ester prepolymer of four degrees of functionality act as the degree of cross linking that improves glue-line; The benzophenone of mass percent 0.2% is light trigger; The methyl methacrylate of mass percent 94.8% is reactive diluent.
Claims (9)
1. a method that on Sapphire Substrate, prepares nano-pattern is characterized in that, comprises the steps:
(1) choose clean Sapphire Substrate substrate, at its surface coated HMDS, baking reacts completely it;
(2) coating ultraviolet light curing nano impression glue material forms the impression glue-line; The viscosity of said ultraviolet light curing nano impression glue material is 1000 ~ 10000 centipoises, and it comprises polyfunctional acrylic ester prepolymer, light trigger and bonding promoter, and said bonding promoter is binded promoter for the acrylic acid ester polyester;
(3) impression block is pressed into above-mentioned impression glue-line, uv-exposure is removed impression block behind the end exposure; Said impression block is the flexible nano impression block of two-layer composite, and its upper strata is flexible macromolecular elastomer substrate, and the Young's modulus scope is at 1 ~ 5N/mm
2, its thickness is 0.1 ~ 3mm; Lower floor is the photocuring high molecular nanometer patterned layer of rigidity, and the Young's modulus scope is at 10N/mm
2More than, its thickness is 30 ~ 500nm;
(4) etching is removed nano impression glue remnant layer, exposes Sapphire Substrate;
(5) with the nano impression glue-line as etch mask, the etching Sapphire Substrate;
(6) etching is removed the nano impression glue-line, can obtain the nano-patterning Sapphire Substrate.
2. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1 is characterized in that: in the said step (4), adopt O
2Reactive ion etching process is removed nano impression glue remnant layer.
3. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1 is characterized in that: in the said step (5), adopt the wet etching Sapphire Substrate; Adopt the mixed acid of sulfuric acid and phosphoric acid, etching temperature is 90 ℃ or less than 90 ℃, etch rate is 1 ~ 2 nm/minute.
4. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1 is characterized in that: in the said step (5), adopt Cl
2Reactive ion etching process dry etching Sapphire Substrate.
5. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1 is characterized in that: in the said step (6), adopt O
2Reactive ion etching process is removed the nano impression glue-line.
6. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1; It is characterized in that: in the said step (3); The upper strata of the flexible nano impression block of said two-layer composite is flexible macromolecular elastomer substrate, and the Young's modulus scope is at 1 ~ 5N/mm
2, its thickness is 0.1 ~ 2mm; Lower floor is the photocuring high molecular nanometer patterned layer of rigidity, and the Young's modulus scope is at 20N/mm
2More than, its thickness is 50 ~ 500nm.
7. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1 is characterized in that: in the said step (3), the two-layer up and down of the flexible nano impression block of said two-layer composite combined closely through bonding or chemical bond.
8. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1; It is characterized in that: in the said step (3), photocuring high molecular nanometer patterned laminar surface bonding one deck low-surface-energy of the rigidity of said impression block lower floor is fluoridized organic molecule or macromolecule adherent layer.
9. the method that on Sapphire Substrate, prepares nano-pattern according to claim 1 is characterized in that: in the said step (3), when impression block was pressed into the impression glue-line, its external pressure was less than 0.01 atmospheric pressure or do not have external pressure.
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Cited By (11)
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| CN103337575A (en) * | 2013-07-01 | 2013-10-02 | 哈尔滨工业大学深圳研究生院 | Efficient and low-cost preparing method for large-area graphical sapphire substrate |
| CN103594555A (en) * | 2013-11-08 | 2014-02-19 | 无锡英普林纳米科技有限公司 | Preparation method for black silicon material with self-cleaning function |
| CN103840050A (en) * | 2012-11-26 | 2014-06-04 | 苏州新纳晶光电有限公司 | Method for fast preparing sapphire pattern substrate through nanoimprint technology |
| CN104078532A (en) * | 2013-03-29 | 2014-10-01 | 香港科技大学 | Roll-to-roll fabrication of ordered three-dimensional nanostructure array, related techniques, materials and products |
| CN104662641A (en) * | 2012-09-10 | 2015-05-27 | 株式会社Lg化学 | Method for forming silicon oxide nanopattern, method for forming metal nanopattern and magnetic recording medium for information storage using same |
| CN105236350A (en) * | 2015-10-21 | 2016-01-13 | 中国电子科技集团公司第四十九研究所 | Direct bonding method for sapphire pressure-sensitive chip |
| CN107844027A (en) * | 2017-09-28 | 2018-03-27 | 边捷 | A kind of high-resolution overlength 1-dimention nano pattern preparation method |
| CN108198752A (en) * | 2017-12-29 | 2018-06-22 | 长沙新材料产业研究院有限公司 | A kind of method for preparing pattern on substrate |
| US10663856B2 (en) | 2017-08-24 | 2020-05-26 | City University Of Hong Kong | Optical mask for use in a photolithography process, a method for fabricating the optical mask and a method for fabricating an array of patterns on a substrate using the optical mask |
| CN113406860A (en) * | 2021-07-30 | 2021-09-17 | 华天慧创科技（西安）有限公司 | Stamp substrate and preparation method thereof |
| CN115548191A (en) * | 2022-12-01 | 2022-12-30 | 元旭半导体科技股份有限公司 | Preparation method of anti-crack sapphire substrate and anti-crack sapphire substrate |
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| CN104662641B (en) * | 2012-09-10 | 2017-03-22 | 株式会社Lg化学 | Method for forming silicon oxide nanopattern, method for forming metal nanopattern and magnetic recording medium for information storage using same |
| CN104662641A (en) * | 2012-09-10 | 2015-05-27 | 株式会社Lg化学 | Method for forming silicon oxide nanopattern, method for forming metal nanopattern and magnetic recording medium for information storage using same |
| CN103840050A (en) * | 2012-11-26 | 2014-06-04 | 苏州新纳晶光电有限公司 | Method for fast preparing sapphire pattern substrate through nanoimprint technology |
| CN104078532A (en) * | 2013-03-29 | 2014-10-01 | 香港科技大学 | Roll-to-roll fabrication of ordered three-dimensional nanostructure array, related techniques, materials and products |
| CN103337575A (en) * | 2013-07-01 | 2013-10-02 | 哈尔滨工业大学深圳研究生院 | Efficient and low-cost preparing method for large-area graphical sapphire substrate |
| CN103594555B (en) * | 2013-11-08 | 2016-03-23 | 无锡英普林纳米科技有限公司 | A kind of preparation method with the black silicon material of self-cleaning function |
| CN103594555A (en) * | 2013-11-08 | 2014-02-19 | 无锡英普林纳米科技有限公司 | Preparation method for black silicon material with self-cleaning function |
| CN105236350A (en) * | 2015-10-21 | 2016-01-13 | 中国电子科技集团公司第四十九研究所 | Direct bonding method for sapphire pressure-sensitive chip |
| US10663856B2 (en) | 2017-08-24 | 2020-05-26 | City University Of Hong Kong | Optical mask for use in a photolithography process, a method for fabricating the optical mask and a method for fabricating an array of patterns on a substrate using the optical mask |
| CN107844027A (en) * | 2017-09-28 | 2018-03-27 | 边捷 | A kind of high-resolution overlength 1-dimention nano pattern preparation method |
| CN107844027B (en) * | 2017-09-28 | 2023-01-06 | 边捷 | Preparation method of high-resolution ultralong one-dimensional nano pattern |
| CN108198752A (en) * | 2017-12-29 | 2018-06-22 | 长沙新材料产业研究院有限公司 | A kind of method for preparing pattern on substrate |
| CN113406860A (en) * | 2021-07-30 | 2021-09-17 | 华天慧创科技（西安）有限公司 | Stamp substrate and preparation method thereof |
| CN113406860B (en) * | 2021-07-30 | 2023-09-12 | 华天慧创科技（西安）有限公司 | Stamp substrate and preparation method thereof |
| CN115548191A (en) * | 2022-12-01 | 2022-12-30 | 元旭半导体科技股份有限公司 | Preparation method of anti-crack sapphire substrate and anti-crack sapphire substrate |
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