CN102556950A - Tunable artificial electromagnetic material based on three-layer structure and preparation method thereof - Google Patents
Tunable artificial electromagnetic material based on three-layer structure and preparation method thereof Download PDFInfo
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- CN102556950A CN102556950A CN2012100267329A CN201210026732A CN102556950A CN 102556950 A CN102556950 A CN 102556950A CN 2012100267329 A CN2012100267329 A CN 2012100267329A CN 201210026732 A CN201210026732 A CN 201210026732A CN 102556950 A CN102556950 A CN 102556950A
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Abstract
The invention relates to a tunable artificial electromagnetic material based on a three-layer structure and a preparation method thereof. The artificial electromagnetic material is a micro-nano graphic structure composed of a metal-doped medium-metal three-layer structure and can be used for infrared and terahertz wave bands. The preparation method comprises the following steps: selecting an SOI and using the technologies of deposition, bonding, dry etching, wet corrosion and redeposition so as to obtain the metal-doped medium-metal three-layer structure on a substrate; carrying out photoetching on the metal-doped medium-metal three-layer structure so as to obtain a photoresist pattern; and transferring the photoresist pattern onto a metallic film layer by using ion beam etching so as to obtain the artificial electromagnetic material based on the metal-doped medium-metal three-layer structure. According to the invention, the disadvantages of difficult doping, uneven doping and difficult control of the thickness of a doped layer in preparation of doped silicon by using the conventional methods of sputtering, ion implantation, bonding and the like are avoided, and the preparation method provided in the invention is simple and easily controllable and is a high efficiency reliable preparation method for an artificial electromagnetic material.
Description
Technical field
The invention belongs to that the micronano optical element is made and technical field of micro and nano fabrication, particularly a kind of tunable artificial electromagnetic material based on three-decker and preparation method thereof is used for artificial electromagnetic material and preparation thereof infrared, terahertz wave band.
Background technology
Artificial electromagnetic material is meant at occurring in nature itself and do not exist or do not come to light, but by the derivation calculation Design of electromagnetic theory and make artificial medium or material with unconventional electromagnetic attributes.Artificial electromagnetic material is normally formed by the sub-wavelength structure unit periodic arrangement (perhaps aperiodic) that resonance response is arranged.Because its construction unit is generally than more than the corresponding little one magnitude of wavelength; Should this overall structure can regard an average effect as, so its whole electromagnetic property can be described through effective dielectric constant and magnetic conductivity for the response of external electromagnetic field.The effective dielectric constant of these materials and magnetic conductivity can even be negative value near zero, show unusual electromagnetic property.Utilize these unusual characteristics, can realize functions such as dull and stereotyped focusings, perfect lens, ultra-thin resonator,, in military affairs and daily life, can play an important role in microwave and the optical field value that has a wide range of applications.Therefore, artificial electromagnetic material has become important research focus in the world in recent years.
The structure of artificial electromagnetic material has multiple, but most structure is comparatively complicated.When the suitable wave band of artificial electromagnetic material is microwave, process more or less freelyly, and when suitable wave band is infrared even visible light, the processing of material is difficulty very just.Metal wire is to being a kind of base unit structure that designs artificial electromagnetic material at present; Metal wire is right is designed with narrow slit structure; This slit can not destroy the magnetic response characteristic of original metal wire to structure; And can on the basis of original magnetic resonance, introduce extra electric resonance, make electric resonance and magnetic resonance in same cellular construction, obtain common modulation.Its structure is comparatively simple, is easy to processing and fabricating, has received widely paying close attention to.
The preparation of this type of artificial electromagnetic material often relates to the rete preparation of medium/metal/metal three-decker, and its medium is generally non-crystalline silicon, silica, silicon nitride, magnesium fluoride, alundum (Al etc.As the structure rete for preparing the artificial electromagnetic material of visible light wave range is generally Ag/Al
2O
3/ Ag; The structure rete of the artificial electromagnetic material of preparation near infrared band is generally Au/MgF
2/ Au.Utilize the method for vacuum evaporation or magnetron sputtering can realize the preparation of these retes.And according to the designing requirement of artificial electromagnetic material; Satisfy the dielectric layer preparation of some special three-deckers possibly; Like the structure of the even doped silicon/metal of metalloid/high concentration, just can't make the even doped silicon of high concentration through the method for vapor deposition or sputter this moment.Because the doping content of this dielectric layer and uniformity all can't be controlled in coating process.Other method such as ion implantation are the common methods of silicon doping, but this method can not be controlled uniform doping property longitudinally; If adopt molecular beam epitaxy and bonding method to be subject to the metal level under this dielectric layer again.Therefore need to propose a kind of new method that is used to make the even doped silicon of metal/high concentration/metal three-decker.
Summary of the invention
The technical problem that the present invention will solve is: to the labyrinth design of existing artificial electromagnetic material, proposes a kind of based on the right array structure of the opening metal wire of metal-doped dielectric-metal, the effect that realization dielectric constant and magnetic conductivity are modulated simultaneously; And, propose a kind of method for preparing the three-decker of metal-doped dielectric-metal, and prepare artificial electromagnetic material infrared, terahertz wave band based on this three-decker for the limitation that has the even doped dielectric technology of preparing of high concentration now.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of tunable artificial electromagnetic material preparation method based on three-decker, step is following:
Step (1) is chosen the SOI sheet of suitable twin polishing, cleans up, and in the doped silicon surface deposition layer of metal film of SOI sheet top layer;
Step (2) is got the silicon chip of single-sided polishing in addition, applies a layer binder at polished surface;
SOI sheet and silicon chip that step (3) utilizes adhesion agent will deposit metal film bond, and the good silicon chip-SOI sheet that will bond carries out baking-curing;
Step (4) utilizes dry etching that the bottom monocrystalline silicon of SOI sheet in silicon chip-SOI chip architecture is carried out the etching attenuate;
Step (5) adopts the potassium hydroxide wet etching, and remaining bottom monocrystalline silicon corrosion on the SOI sheet in silicon chip-SOI chip architecture is finished, and the silica intermediate layer of SOI sheet is exposed;
Step (6) adopts the hydrofluoric acid wet etching, the silica intermediate layer of SOI sheet in silicon chip-SOI chip architecture is corroded finish, and exposes the doped silicon surface;
The doped silicon surface deposition layer of metal film of step (7) in step (6), thus the three-decker of metal-doped dielectric-metal on silicon chip, formed;
Step (8) applies photoresist on gained metal-doped dielectric-metal three-decker, and in baking oven or hot plate, carries out preceding baking;
Step (9) utilizes lithographic equipment that substrate is made public, and on photoresist, obtains the two-dimensional and periodic array micro-nano structure figure that designed, and places baking oven or hot plate to carry out post bake;
Step (10) adopts dry etching that the photoresist figure in the step (9) is transferred to the upper strata metal in metal-doped dielectric-metal three-decker;
Step (11) is soaked the sample after the etching with organic solvent, and remaining photoresist after the etching is removed, and can obtain the tunable artificial electromagnetic material based on metal-doped dielectric-metal three-decker.
The SOI sheet of said step (1) is made up of bottom monocrystalline silicon, intermediate layer silica, top layer doped silicon; Underlayer thickness is 300～450 μ m; Intermediate layer thickness is 100～300nm, and top layer is that thickness is even N type silicon or the P type silicon that mixes of high concentration of 0.5～1.5 μ m, and doping content is 10
18～10
20Cm
-1
The deposition process of said step (1) can be magnetron sputtering method, vapour deposition method;
Metal film in the said step (1) can be gold, copper, silver, and thickness of metal film is 100～200nm;
Binding agent in the said step (2) is the glue of a kind of high temperature resistant, strong alkali-acid resistance and organic solvent;
Bonding mode in the said step (3) is the silicon chip adhesion mutually that the metallic diaphragm of SOI and spin coating is had binding agent;
Roasting plant in the said step (3) can be baking oven and hot plate, and temperature range is 100～120 ℃, and stoving time is 5～10min;
Dry etching in the said step (4) can be inductively coupled plasma etching, plasma etching, ion beam etching;
Thickness behind the bottom monocrystalline silicon attenuate of the SOI sheet in the said step (4) is 20～50 μ m;
Deposition process can be magnetron sputtering method, vapour deposition method in the said step (7);
Depositing metallic films can be gold, copper, silver in the said step (7), and thickness of metal film is 40～60nm;
The thickness of photoresist is 100～200nm in the said step (8), and the pre-bake temperature scope is 100～120 ℃, and stoving time is 20～30min;
Lithographic equipment in the said step (9) can be near contact photoetching machine, projection aligner, e-beam direct-writing exposure machine;
The live width of the two-dimensional and periodic array micro-nano structure figure in the said step (9) can be 0.3～60 μ m, and the cycle can be 12～160 μ m;
Post bake temperature in the said step (9) is: 100～120 ℃, the post bake time is: 20～30min;
Dry etching in the said step (10) can be plasma etching, ion beam etching, inductively coupled plasma etching;
Etching depth in the said step (10) should equal metal-doped dielectric-metal three-decker metal layer thickness at the middle and upper levels, and error is no more than 5%;
Organic solvent in the said step (11) is for dissolving the solvent of photoresist.
A kind of tunable artificial electromagnetic material based on three-decker, this tunable artificial electromagnetic material is processed by above-mentioned processing method.
The present invention compared with prior art has the following advantages:
The present invention is based on the three-decker of metal-doped dielectric-metal, it is right to have designed the opening metal wire, and electric resonance and magnetic resonance are unified in the same cellular construction, when realizing the dielectric constant modulation, magnetic conductivity is modulated simultaneously.And the present invention is based on the SOI sheet; Utilize the combination technique of bonding-dry etching-wet etching to obtain the even doped silicon of high concentration in the SOI sheet, realized preparation based on the even doped silicon of metal/high concentration/metal three-decker artificial electromagnetic material in conjunction with coating technique.Avoided adopting methods such as conventional method such as sputter, ion injection, bonding to prepare difficult, the shortcomings such as doping is uneven, the difficult control of doped layer thickness of doping that doped silicon brings.The technology of this method is simple simultaneously, is easy to control, is a kind of high-efficiency reliable preparation method of artificial electromagnetic material.
Description of drawings
Fig. 1 is the flow chart of the inventive method;
Fig. 2 is at the structural representation of the doped silicon surface deposition metallic diaphragm of SOI sheet in the step 1 of the present invention;
Fig. 3 is SOI sheet and a common silicon chip stickup sketch map in the step 3 of the present invention;
Fig. 4 is the structural representation behind dry etching silicon and wet etching silicon and the silica in the step 6 of the present invention;
Fig. 5 is the even doped silicon of the metal/high concentration/metal three-decker sketch map that obtains after step 7 of the present invention is accomplished;
Fig. 6 is the structural representation after step 9 photoetching of the present invention, development finish;
Fig. 7 is the finished product structural representation that obtains after step 11 of the present invention is accomplished;
Drawing is explained as follows: 1 is the bottom monocrystalline silicon of SOI sheet; 2 is the intermediate layer silica of SOI sheet; 3 is the top layer doped silicon of SOI sheet; 4 is metallic diaphragm; 5 is binding agent; 6 is common silicon chip; 7 is metal film; 8 is resist.
The specific embodiment:
The preparation of the even doped silicon of metal/high concentration/metal three-decker is detailed below with reference to accompanying drawings; Provided the exemplary embodiment of the inventive method in the accompanying drawing; Identical label is represented identical part in different figure; Accompanying drawing is not necessarily pro rata, and its emphasis is being explained on the method for the present invention.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and promptly can realize the full content of claim of the present invention to those skilled in the art through following examples.
An exemplary embodiments of the present invention is the three-decker of making the even doped silicon/copper of copper/high concentration, and suitable wave band is a terahertz wave band.Wherein the thickness of copper is respectively 100nm and 50nm, and the thickness of doped layer is 1 μ m, and doped chemical is a phosphorus, and doping content is 10
18Cm
-1
The making flow process of this figure is as shown in Figure 1, and concrete performing step is following:
(1) selection is of a size of the twin polishing SOI sheet of 15mm * 15mm, and cleans up with acetone soln, is positioned in the clean container, in 160 ℃ of bakings of baking oven 15min, treats that it cools off naturally.Wherein the thickness of bottom monocrystalline silicon 1 is 450 μ m, and the thickness of intermediate layer silica 2 is 300nm, and the thickness of the N type silicon 3 that the top layer high concentration is evenly mixed is 1 μ m, thickness and precision ± 0.05 μ m, and the concentration of Doping Phosphorus is 10
18Cm
-1
(2) utilizing the magnetron sputtering film device, is the metallic copper 4 of 100nm at top layer doped silicon 3 surface depositions one layer thickness of SOI sheet, and structure is as shown in Figure 2 after accomplishing.
(3) selection is of a size of the common silicon chip 6 of single-sided polishing of 20mm * 20mm, cleans up with acetone soln, and adopts the mode of spin coating to be coated with one deck TH04095-2 glue 5 at polished surface, and SOI sheet and common silicon chip are used to bond.
(4) will deposit SOI sheet and the common silicon chip bonding of metallic copper, copper surface pastes with binding agent mutually.And then be positioned on the hot plate, progressively be warming up to 120 ℃ from room temperature, heat 10min, accomplish the bonding of common silicon chip and SOI sheet.Structure was as shown in Figure 3 after bonding was accomplished.
(5) the good SOI sheet-common silicon chip that will bond places in the ICP etching cavity; The surface of bottom monocrystalline silicon 1 as shown in Figure 3 up; The surface of common silicon chip 6 utilizes the method for ICP dry etching that SOI sheet bottom monocrystalline silicon 1 is lost deeply down, and etching depth is 400 μ m.
(6) utilize the method for potassium hydroxide wet etching that the remaining bottom monocrystalline silicon 1 of SOI sheet is corroded, corrosion thickness is 50 μ m, until monocrystalline silicon is removed fully.
(7) utilize the method for hydrofluoric acid wet etching that SOI sheet intermediate layer silica 2 is corroded, corrosion thickness is 300nm, exposes the N type silicon face 3 that high concentration is evenly mixed, and structure is as shown in Figure 4 after accomplishing.
(8) utilize the magnetron sputtering film device, N type silicon face 3 depositions one layer thickness that evenly mixes in the high concentration of exposing is the metallic copper 7 of 50nm, accomplishes the making of the even N type silicon/copper three-decker of mixing of copper/high concentration, and structure is as shown in Figure 5.
(9) on the copper surface of substrate, adopt the mode of spin coating to apply resist AR3120, the rotating speed of spin coating is 5000rpm; Toast 10min for 100 ℃ with temperature after applying completion.
(10) employing makes public to substrate near the formula photoetching, and the array of metal lines microstructure graph that is designed is transferred on the resist.Use the line thickness W=30 μ m of mask, length L=80 μ m, aperture pitch S=3 μ m; Cycle Px=40 μ m, Py=150 μ m.Substrate after the exposure is carried out developing and fixing, obtain the resist figure of array structure, structure is as shown in Figure 6 after accomplishing.
The substrate that (11) will have the resist figure is put into the IBE etching apparatus, is mask with the resist figure, and the metal level of substrate surface is carried out etching; The ion beam current that wherein adopts is that 30mA, electronic beam current are that 40mA, plate voltage are that 400V, accelerator card voltage are 200V, 20 ℃ of sample stage temperature, and 60 ° of sputter angles, etch period 180s make the complete etching of upper metal layers of substrate surface.
(12) soak the good sample of etching with acetone, the remaining resist of etching is removed, obtain the evenly tunable artificial electromagnetic material of the N type silicon/copper three-decker of doping of copper/high concentration, structure is as shown in Figure 7.
An exemplary embodiments of the present invention is the three-decker of making the even doped silicon of gold/high concentration/gold, and suitable wave band is infrared in being.Wherein the thickness of gold is respectively 200nm and 40nm, and the thickness of doped layer is 1.05 μ m, and doped chemical is a phosphorus, and doping content is 10
19Cm
-1
(1) selects to be of a size of the twin polishing SOI sheet of 15mm * 15mm, place red fuming nitric acid (RFNA): soak 1.5h in the mixed solution of water=3: 1, be placed on again in the deionized water ultrasonic three times; Each ultrasonic time is 5min; Clean with acetone at last,, treat that it cools off naturally in 160 ℃ of bakings of baking oven 30min.The thickness of this SOI sheet bottom monocrystalline silicon 1 is 450 μ m, and the thickness of intermediate layer silica 2 is 300nm, and the thickness of the N type silicon 3 that the top layer high concentration is evenly mixed is 1.05 μ m, thickness and precision ± 0.05 μ m, and the concentration of Doping Phosphorus is 10
19Cm
-1
(2) utilizing the magnetron sputtering film device, is the golden film 4 of 200nm at top layer doped silicon 3 surface depositions one layer thickness of SOI sheet, and structure is as shown in Figure 2 after accomplishing.
(3) selection is of a size of the common silicon chip 6 of the single-sided polishing of 20mm * 20mm, cleans up with acetone soln, and adopts the mode of spin coating to be coated with one deck TH04095-2 glue 5 at polished surface, and SOI sheet and common silicon chip are used to bond.
(4) will deposit SOI sheet and the common silicon chip bonding of golden film, paste with binding agent mutually on golden film surface, as shown in Figure 3.And then be positioned on the hot plate, progressively be warming up to 120 ℃ from room temperature, heat 10min, accomplish the bonding of common silicon chip and SOI sheet.Structure was as shown in Figure 3 after bonding was accomplished.
(5) the good SOI sheet-common silicon chip that will bond places in the ICP etching cavity, the surface of bottom monocrystalline silicon 1 up, the surface of common silicon chip 6 is down, and is as shown in Figure 3.Utilize the method for ICP dry etching that SOI sheet bottom monocrystalline silicon 1 is lost deeply, etching depth is 420 μ m.
(6) utilize the method for potassium hydroxide wet etching that the remaining bottom monocrystalline silicon 1 of SOI sheet is corroded, corrosion thickness is 30 μ m, until monocrystalline silicon is removed fully.
(7) utilize the method for hydrofluoric acid wet etching that SOI sheet intermediate layer silicon dioxide layer 2 is corroded, corrosion thickness is 300nm, exposes the N type silicon face 3 that high concentration is evenly mixed, and structure is as shown in Figure 4 after accomplishing.
(8) utilize the magnetron sputtering film device, N type silicon face 3 depositions one layer thickness that evenly mixes in the high concentration of exposing is the golden film of 40nm, and is as shown in Figure 5, accomplishes the making of the even N type silicon/golden three-decker of mixing of gold/high concentration, and structure is as shown in Figure 5.
(9) on the gold surface of substrate, adopt the mode of spin coating to apply ZEP 520A electronic corrosion-resistant, the rotating speed of spin coating is 6000rpm; Toast 10min for 100 ℃ with temperature after applying completion.
(10) adopt electron-beam direct writing to make public, the array of metal lines micro-nano structure figure that is designed is transferred on the resist.The line thickness W=300nm of electron-beam direct writing, length L=800nm, aperture pitch S=100nm; Cycle Px=1.2 μ m, Py=1.5 μ m.Substrate after the exposure is carried out developing and fixing, obtain the resist figure of array structure, structure is as shown in Figure 6 after accomplishing.
(11) substrate that has the resist figure is put into the IBE etching apparatus, is mask with the resist figure, and the metal level of substrate surface is carried out etching; The ion beam current that wherein adopts is that 30mA, electronic beam current are that 40mA, plate voltage are that 400V, accelerator card voltage are 200V, 20 ℃ of sample stage temperature, and 60 ° of sputter angles, etch period 120s are with the complete etching of golden film of substrate surface.
(12) soak the good sample of etching with acetone, the remaining resist of etching is removed, obtain the evenly tunable artificial electromagnetic material of the N type silicon/golden three-decker of doping of gold/high concentration, structure is as shown in Figure 7.
The part that the present invention does not set forth in detail belongs to techniques well known.
Claims (19)
1. the preparation method based on the tunable artificial electromagnetic material of three-decker is characterized in that this method comprises the steps:
Step (1) is chosen the SOI sheet of suitable twin polishing, cleans up, and in the doped silicon surface deposition layer of metal film of SOI sheet top layer;
Step (2) is got the silicon chip of single-sided polishing in addition, applies a layer binder at polished surface;
SOI sheet and silicon chip that step (3) utilizes adhesion agent will deposit metal film bond, and the good silicon chip-SOI sheet that will bond carries out baking-curing;
Step (4) utilizes dry etching that the bottom monocrystalline silicon of SOI sheet in silicon chip-SOI chip architecture is carried out the etching attenuate;
Step (5) adopts the potassium hydroxide wet etching, and remaining bottom monocrystalline silicon corrosion on the SOI sheet in silicon chip-SOI chip architecture is finished, and the silica intermediate layer of SOI sheet is exposed;
Step (6) adopts the hydrofluoric acid wet etching, the silica intermediate layer of SOI sheet in silicon chip-SOI chip architecture is corroded finish, and exposes the doped silicon surface;
The doped silicon surface deposition layer of metal film of step (7) in step (6), thus the three-decker of metal-doped dielectric-metal on silicon chip, formed;
Step (8) applies photoresist on gained metal-doped dielectric-metal three-decker, and in baking oven or hot plate, carries out preceding baking;
Step (9) utilizes lithographic equipment that substrate is made public, and on photoresist, obtains the two-dimensional and periodic array micro-nano structure figure that designed, and places baking oven or hot plate to carry out post bake;
Step (10) adopts dry etching that the photoresist figure in the step (9) is transferred to the upper strata metal in metal-doped dielectric-metal three-decker;
Step (11) is soaked the sample after the etching with organic solvent, and remaining photoresist after the etching is removed, and can obtain the tunable artificial electromagnetic material based on metal-doped dielectric-metal three-decker.
2. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1; It is characterized in that; The SOI sheet of said step (1) is made up of bottom monocrystalline silicon, intermediate layer silica, top layer doped silicon, and underlayer thickness is 300～450 μ m, and intermediate layer thickness is 100～300nm; Top layer is that thickness is even N type silicon or the P type silicon that mixes of high concentration of 0.5～1.5 μ m, and doping content is 10
18～10
20Cm
-1
3. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that the deposition process of said step (1) can be magnetron sputtering method or vapour deposition method.
4. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that, the metal film in the said step (1) can be gold, copper or silver, and thickness of metal film is 100～200nm.
5. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that, the binding agent in the said step (2) is the glue of a kind of high temperature resistant, strong alkali-acid resistance and organic solvent.
6. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that, the bonding mode in the said step (3) is the silicon chip adhesion mutually that the metallic diaphragm of SOI and spin coating is had binding agent.
7. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1; It is characterized in that; Roasting plant in the said step (3) can be baking oven and hot plate, and temperature range is 100～120 ℃, and stoving time is 5～10min.
8. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that the dry etching in the said step (4) can be inductively coupled plasma etching, plasma etching or ion beam etching.
9. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that the thickness behind the bottom monocrystalline silicon attenuate of the SOI sheet in the said step (4) is 20～50 μ m.
10. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that, deposition process can be magnetron sputtering method or vapour deposition method in the said step (7).
11. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that, depositing metallic films can be gold, copper or silver in the said step (7), and thickness of metal film is 40～60nm.
12. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1; It is characterized in that; The thickness of photoresist is 100～200nm in the said step (8), and the pre-bake temperature scope is 100～120 ℃, and stoving time is 20～30min.
13. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1; It is characterized in that the lithographic equipment in the said step (9) can be near contact photoetching machine, projection aligner or e-beam direct-writing exposure machine.
14. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1; It is characterized in that; The live width of the two-dimensional and periodic array micro-nano structure figure in the said step (9) can be 0.3～60 μ m, and the cycle can be 1.2～160 μ m.
15. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, it is characterized in that the post bake temperature in the said step (9) is: 100～120 ℃, the post bake time is: 20～30min.
16. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that the dry etching in the said step (10) can be plasma etching, ion beam etching or inductively coupled plasma etching.
17. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1; It is characterized in that; Etching depth in the said step (10) should equal metal-doped dielectric-metal three-decker metal layer thickness at the middle and upper levels, and error is no more than 5%.
18. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1 is characterized in that, the organic solvent in the said step (11) is for dissolving the solvent of photoresist.
19. the tunable artificial electromagnetic material based on three-decker is characterized in that: this tunable artificial electromagnetic material is processed into by each described method in the claim 1 to 18.
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