CN102556950B - Tunable artificial electromagnetic material based on three-layer structure and preparation method thereof - Google Patents
Tunable artificial electromagnetic material based on three-layer structure and preparation method thereof Download PDFInfo
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- CN102556950B CN102556950B CN201210026732.9A CN201210026732A CN102556950B CN 102556950 B CN102556950 B CN 102556950B CN 201210026732 A CN201210026732 A CN 201210026732A CN 102556950 B CN102556950 B CN 102556950B
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Abstract
The invention relates to a tunable artificial electromagnetic material based on a three-layer structure and a preparation method thereof. The artificial electromagnetic material is a micro-nano graphic structure composed of a metal-doped medium-metal three-layer structure and can be used for infrared and terahertz wave bands. The preparation method comprises the following steps: selecting an SOI and using the technologies of deposition, bonding, dry etching, wet corrosion and redeposition so as to obtain the metal-doped medium-metal three-layer structure on a substrate; carrying out photoetching on the metal-doped medium-metal three-layer structure so as to obtain a photoresist pattern; and transferring the photoresist pattern onto a metallic film layer by using ion beam etching so as to obtain the artificial electromagnetic material based on the metal-doped medium-metal three-layer structure. According to the invention, the disadvantages of difficult doping, uneven doping and difficult control of the thickness of a doped layer in preparation of doped silicon by using the conventional methods of sputtering, ion implantation, bonding and the like are avoided, and the preparation method provided in the invention is simple and easily controllable and is a high efficiency reliable preparation method for an artificial electromagnetic material.
Description
Technical field
The invention belongs to micronano optical element and make and technical field of micro and nano fabrication, particularly a kind of tunable artificial electromagnetic material based on three-decker and preparation method thereof, for artificial electromagnetic material and preparation thereof infrared, terahertz wave band.
Background technology
Artificial electromagnetic material refers at occurring in nature itself and do not exist or be not found, but calculated and designed and make by the derivation of electromagnetic theory, has artificial medium or the material of unconventional electromagnetic attributes.Artificial electromagnetic material is normally formed by the sub-wavelength structure unit periodic arrangement (or aperiodic) that has resonance response.Because its construction unit is generally little one more than the order of magnitude than corresponding wavelength, should this overall structure can regard an average effect as for the response of external electromagnetic field, so its overall electromagnetic property can be described by effective dielectric constant and magnetic conductivity.It is even negative value that the effective dielectric constant of these materials and magnetic conductivity can approach zero, shows unusual electromagnetic property.Utilize these unusual characteristics, can realize the functions such as dull and stereotyped focusing, perfect lens, ultra-thin resonator, in microwave and the optical field value that has a wide range of applications, in military and daily life, can play an important role.Therefore, artificial electromagnetic material has become an important study hotspot in the world in recent years.
The structure of artificial electromagnetic material has multiple, but most structure is comparatively complicated.In the time that the applicable wave band of artificial electromagnetic material is microwave, it is comparatively easy to process, and in the time that applicable wave band is infrared even visible ray, the processing of material is just very difficult.Metal wire is to being a kind of base unit structure that designs at present artificial electromagnetic material, what metal wire was right is designed with narrow slit structure, this slit can not destroy the magnetic response characteristic of original metal wire to structure, and can on the basis of original magnetic resonance, introduce extra electric resonance, electric resonance and magnetic resonance are jointly modulated in same cellular construction.Its structure is comparatively simple, is easy to processing and fabricating, has been subject to paying close attention to widely.
The preparation of this type of artificial electromagnetic material often relates to the Film preparation of medium/metal/metal three-decker, and its medium is generally non-crystalline silicon, silica, silicon nitride, magnesium fluoride, alundum (Al2O3) etc.As the structure rete of preparing the artificial electromagnetic material of visible light wave range is generally Ag/Al
2o
3/ Ag; The structure rete of preparing the artificial electromagnetic material of near infrared band is generally Au/MgF
2/ Au.Utilize the method for vacuum evaporation or magnetron sputtering can realize the preparation of these retes.And according to the designing requirement of artificial electromagnetic material, meet possibly the dielectric layer preparation of some special three-deckers, as the structure of metalloid/high concentration Uniform Doped silicon/metal, just now cannot make high concentration Uniform Doped silicon by the method for evaporation or sputter.Because the doping content of this dielectric layer and uniformity all cannot be controlled in coating process.Other method as ion implantation be the common method of silicon doping, but the method can not be controlled longitudinal uniform doping; If adopt molecular beam epitaxy and bonding method to be limited to again the metal level under this dielectric layer.Therefore need to propose a kind of for making the new method of metal/high concentration Uniform Doped silicon/metal three-decker.
Summary of the invention
The technical problem to be solved in the present invention is: for the labyrinth design of existing artificial electromagnetic material, propose a kind of right array structure of open metal line based on metal-doped dielectric-metal, realize the effect that dielectric constant and magnetic conductivity are modulated simultaneously; And for the limitation of existing high concentration Uniform Doped medium technology of preparing, propose a kind of method of the three-decker of preparing metal-doped dielectric-metal, and prepare artificial electromagnetic material infrared, terahertz wave band based on this three-decker.
The technical solution adopted for the present invention to solve the technical problems is:
Based on a tunable artificial electromagnetic material preparation method for three-decker, step is as follows:
Step (1) is chosen the SOI sheet of suitable twin polishing, cleans up, and in the doped silicon surface deposition layer of metal film of SOI sheet top layer;
Step (2) is separately got the silicon chip of single-sided polishing, applies a layer binder at polished surface;
Step (3) utilizes adhesion agent to deposit SOI sheet and the silicon chip bonding of metal film, and the silicon chip-SOI sheet having bondd is carried out to baking-curing;
Step (4) utilizes dry etching that the bottom monocrystalline silicon of SOI sheet in silicon chip-SOI chip architecture is carried out to etching attenuate;
Step (5) adopts potassium hydroxide wet etching, by complete remaining bottom monocrystalline silicon corrosion on SOI sheet in silicon chip-SOI chip architecture, the silica intermediate layer of SOI sheet is exposed;
Step (6) adopts hydrofluoric acid wet etching, by complete the silica intermediate layer corrosion of SOI sheet in silicon chip-SOI chip architecture, exposes doped silicon surface;
The doped silicon surface deposition layer of metal film of step (7) in step (6), thus the three-decker of metal-doped dielectric-metal on silicon chip, formed;
Step (8) applies photoresist in gained metal-doped dielectric-metal three-decker, and carries out front baking in baking oven or hot plate;
Step (9) utilizes lithographic equipment to expose to substrate, obtains designed two-dimensional and periodic array micro-nano structure figure on photoresist, and is placed in baking oven or hot plate carries out post bake;
Step (10) adopts dry etching that the photoetching offset plate figure in step (9) is transferred to the upper strata metal in metal-doped dielectric-metal three-decker;
Step (11) is soaked the sample after etching with organic solvent, and remaining photoresist after etching is removed, and can obtain the tunable artificial electromagnetic material based on metal-doped dielectric-metal three-decker.
The SOI sheet of described step (1) is made up of bottom monocrystalline silicon, intermediate layer silica, top layer doped silicon, underlayer thickness is 300～450 μ m, intermediate layer thickness is 100～300nm, top layer is that thickness is N-type silicon or the P type silicon of the high concentration Uniform Doped of 0.5～1.5 μ m, and doping content is 10
18～10
20cm
-1;
The deposition process of described step (1) can be magnetron sputtering method, vapour deposition method;
Metal film in described step (1) can be gold, copper, silver, and thickness of metal film is 100～200nm;
Binding agent in described step (2) is the glue of a kind of high temperature resistant, strong alkali-acid resistance and organic solvent;
Bonding mode in described step (3) is the silicon chip phase adhesion that the metallic diaphragm of SOI and spin coating is had to binding agent;
Roasting plant in described step (3) can be baking oven and hot plate, and temperature range is 100～120 DEG C, and baking time is 5～10min;
Dry etching in described step (4) can be inductively coupled plasma etching, plasma etching, ion beam etching;
Thickness after the bottom monocrystalline silicon attenuate of the SOI sheet in described step (4) is 20～50 μ m;
In described step (7), deposition process can be magnetron sputtering method, vapour deposition method;
In described step (7), depositing metallic films can be gold, copper, silver, and thickness of metal film is 40～60nm;
In described step (8), the thickness of photoresist is 100～200nm, and pre-bake temperature scope is 100～120 DEG C, and baking time is 20～30min;
Lithographic equipment in described step (9) can be for approaching contact photoetching machine, projection aligner, e-beam direct-writing exposure machine;
The live width of the two-dimensional and periodic array micro-nano structure figure in described step (9) can be 0.3～60 μ m, and the cycle can be 12～160 μ m;
Post bake temperature in described step (9) is: 100～120 DEG C, the post bake time is: 20～30min;
Dry etching in described step (10) can be plasma etching, ion beam etching, inductively coupled plasma etching;
Etching depth in described step (10) should equal metal-doped dielectric-metal three-decker metal layer thickness at the middle and upper levels, and error is no more than 5%;
Organic solvent in described step (11) is the solvent that can dissolve photoresist.
Based on a tunable artificial electromagnetic material for three-decker, this is tunable, and artificial electromagnetic material is made up of above-mentioned processing method.
The present invention compared with prior art has the following advantages:
The present invention is based on the three-decker of metal-doped dielectric-metal, designed open metal line pair, electric resonance and magnetic resonance are unified in same cellular construction, in realizing dielectric constant modulation, magnetic conductivity is modulated simultaneously.And the present invention is based on SOI sheet, utilize the combination technique of bonding-dry etching-wet etching to obtain the high concentration Uniform Doped silicon in SOI sheet, realized the preparation based on metal/high concentration Uniform Doped silicon/metal three-decker artificial electromagnetic material in conjunction with coating technique.Avoid adopting conventional method to prepare the shortcomings such as doping difficulty, doping that doped silicon brings are uneven, the difficult control of doped layer thickness as methods such as sputter, Implantation, bondings.The technique of the method is simple simultaneously, be easy to control, and be the preparation method of a kind of high efficient and reliable of artificial electromagnetic material.
Brief description of the drawings
Fig. 1 is the flow chart of the inventive method;
Fig. 2 is the structural representation at the doped silicon surface deposition metallic diaphragm of SOI sheet in step 1 of the present invention;
Fig. 3 is SOI sheet and common silicon chip stickup schematic diagram in step 3 of the present invention;
Fig. 4 is the structural representation after dry etching silicon and wet etching silicon and silica in step 6 of the present invention;
Fig. 5 is the metal/high concentration Uniform Doped silicon/metal three-decker schematic diagram obtaining after step 7 of the present invention completes;
Fig. 6 is the structural representation after step 9 photoetching of the present invention, development;
Fig. 7 is the finished product structure schematic diagram obtaining after step 11 of the present invention completes;
Drawing is described as follows: 1 is the bottom monocrystalline silicon of SOI sheet; 2 is the intermediate layer silica of SOI sheet; 3 is the top layer doped silicon of SOI sheet; 4 is metallic diaphragm; 5 is binding agent; 6 is common silicon chip; 7 is metal film; 8 is resist.
Detailed description of the invention:
The preparation of metal/high concentration Uniform Doped silicon/metal three-decker is described in detail in detail below with reference to accompanying drawings, in accompanying drawing, provide the exemplary embodiment of the inventive method, in different figure, identical label represents identical part, accompanying drawing is not necessarily pro rata, and its emphasis is being explained in method of the present invention.But following embodiment only limits to explain the present invention, and protection scope of the present invention should comprise the full content of claim, and can realize the full content of the claims in the present invention to those skilled in the art by following examples.
Embodiment 1
An exemplary embodiments of the present invention, is the three-decker of making copper/high concentration Uniform Doped silicon/copper, and applicable wave band is terahertz wave band.Wherein the thickness of copper is respectively 100nm and 50nm, and the thickness of doped layer is 1 μ m, and doped chemical is phosphorus, and doping content is 10
18cm
-1.
As shown in Figure 1, specific implementation step is as follows for the making flow process of this figure:
(1) select to be of a size of the twin polishing SOI sheet of 15mm × 15mm, and clean up with acetone soln, be positioned in clean container, in 160 DEG C of baking 15min of baking oven, treat that it is naturally cooling.Wherein the thickness of bottom monocrystalline silicon 1 is 450 μ m, and the thickness of intermediate layer silica 2 is 300nm, and the thickness of the N-type silicon 3 of top layer high concentration Uniform Doped is 1 μ m, thickness and precision ± 0.05 μ m, and the concentration of Doping Phosphorus is 10
18cm
-1.
(2) utilize magnetic-controlled sputtering coating equipment, the metallic copper 4 that is 100nm in top layer doped silicon 3 surface deposition a layer thickness of SOI sheet, after completing, structure is as shown in Figure 2.
(3) select to be of a size of the common silicon chip 6 of single-sided polishing of 20mm × 20mm, clean up with acetone soln, and adopt the mode of spin coating to be coated with one deck TH04095-2 glue 5 at polished surface, for SOI sheet and the common silicon chip of boning.
(4) will deposit SOI sheet and the common silicon chip bonding of metallic copper, copper surface and binding agent are affixed.And then be positioned on hot plate, be progressively warming up to 120 DEG C from room temperature, heat 10min, complete the bonding of common silicon chip and SOI sheet.Bondd rear structure as shown in Figure 3.
(5) the SOI sheet having bondd-common silicon chip is placed in ICP etching cavity, the surface of bottom monocrystalline silicon 1 as shown in Figure 3 upward, the surface of common silicon chip 6, utilizes the method for ICP dry etching to carry out deep etching to SOI sheet bottom monocrystalline silicon 1 down, and etching depth is 400 μ m.
(6) utilize the method for potassium hydroxide wet etching to corrode the remaining bottom monocrystalline silicon 1 of SOI sheet, corrosion thickness is 50 μ m, until monocrystalline silicon is removed completely.
(7) utilize the method for hydrofluoric acid wet etching to corrode SOI sheet intermediate layer silica 2, corrosion thickness is 300nm, exposes the N-type silicon face 3 of high concentration Uniform Doped, and after completing, structure as shown in Figure 4.
(8) utilize magnetic-controlled sputtering coating equipment, deposit at the N-type silicon face 3 of the high concentration Uniform Doped exposing the metallic copper 7 that a layer thickness is 50nm, complete the making of N-type silicon/copper three-decker of copper/high concentration Uniform Doped, structure as shown in Figure 5.
(9) on the copper surface of substrate, adopt the mode of spin coating to apply resist AR3120, the rotating speed of spin coating is 5000rpm; After completing, coating toasts 10min with 100 DEG C of temperature.
(10) adopt proximity photoetching to expose to substrate, designed array of metal lines microstructure graph is transferred on resist.Use the line thickness W=30 μ m of mask, length L=80 μ m, aperture pitch S=3 μ m; Cycle Px=40 μ m, Py=150 μ m.Substrate after exposure is carried out to developing and fixing, obtain the resist figure of array structure, after completing, structure as shown in Figure 6.
(11) substrate with resist figure is put into IBE etching apparatus, taking resist figure as mask, the metal level of substrate surface is carried out to etching; The ion beam current wherein adopting is that 30mA, electronic beam current are that 40mA, plate voltage are that 400V, accelerator card voltage are 200V, 20 DEG C of sample stage temperature, and 60 ° of sputter angles, etch period 180s, make the complete etching of upper metal layers of substrate surface.
(12) soak the good sample of etching with acetone, remaining etching resist is removed, obtain the tunable artificial electromagnetic material of N-type silicon/copper three-decker of copper/high concentration Uniform Doped, structure as shown in Figure 7.
Embodiment 2
An exemplary embodiments of the present invention, is the three-decker of making gold/high concentration Uniform Doped silicon/gold, and applicable wave band is infrared in being.Wherein the thickness of gold is respectively 200nm and 40nm, and the thickness of doped layer is 1.05 μ m, and doped chemical is phosphorus, and doping content is 10
19cm
-1.
(1) selection is of a size of the twin polishing SOI sheet of 15mm × 15mm, be placed in red fuming nitric acid (RFNA): water=3: in 1 mixed solution, soak 1.5h, be placed on again in deionized water ultrasonic three times, each ultrasonic time is 5min, finally clean with acetone, dry 30min in 160 DEG C, baking oven, treat that it is naturally cooling.The thickness of this SOI sheet bottom monocrystalline silicon 1 is 450 μ m, and the thickness of intermediate layer silica 2 is 300nm, and the thickness of the N-type silicon 3 of top layer high concentration Uniform Doped is 1.05 μ m, thickness and precision ± 0.05 μ m, and the concentration of Doping Phosphorus is 10
19cm
-1.
(2) utilize magnetic-controlled sputtering coating equipment, the golden film 4 that is 200nm in top layer doped silicon 3 surface deposition a layer thickness of SOI sheet, after completing, structure is as shown in Figure 2.
(3) select to be of a size of the common silicon chip 6 of single-sided polishing of 20mm × 20mm, clean up with acetone soln, and adopt the mode of spin coating to be coated with one deck TH04095-2 glue 5 at polished surface, for SOI sheet and the common silicon chip of boning.
(4) will deposit SOI sheet and the common silicon chip bonding of golden film, golden film surface is affixed with binding agent, as shown in Figure 3.And then be positioned on hot plate, be progressively warming up to 120 DEG C from room temperature, heat 10min, complete the bonding of common silicon chip and SOI sheet.Bondd rear structure as shown in Figure 3.
(5) the SOI sheet having bondd-common silicon chip is placed in ICP etching cavity, the surface of bottom monocrystalline silicon 1 upward, the surface of common silicon chip 6 down, as shown in Figure 3.Utilize the method for ICP dry etching to SOI sheet bottom monocrystalline silicon 1 deep etching, etching depth is 420 μ m.
(6) utilize the method for potassium hydroxide wet etching to corrode the remaining bottom monocrystalline silicon 1 of SOI sheet, corrosion thickness is 30 μ m, until monocrystalline silicon is removed completely.
(7) utilize the method for hydrofluoric acid wet etching to corrode SOI sheet intermediate layer silicon dioxide layer 2, corrosion thickness is 300nm, exposes the N-type silicon face 3 of high concentration Uniform Doped, and after completing, structure as shown in Figure 4.
(8) utilize magnetic-controlled sputtering coating equipment, deposit at the N-type silicon face 3 of the high concentration Uniform Doped exposing the golden film that a layer thickness is 40nm, as shown in Figure 5, complete the making of the N-type silicon/golden three-decker of gold/high concentration Uniform Doped, structure as shown in Figure 5.
(9) in the gold surface of substrate, adopt the mode of spin coating to apply ZEP 520A electronic corrosion-resistant, the rotating speed of spin coating is 6000rpm; After completing, coating toasts 10min with 100 DEG C of temperature.
(10) adopt electron-beam direct writing to expose, designed array of metal lines micro-nano structure figure is transferred on resist.The line thickness W=300nm of electron-beam direct writing, length L=800nm, aperture pitch S=100nm; Cycle Px=1.2 μ m, Py=1.5 μ m.Substrate after exposure is carried out to developing and fixing, obtain the resist figure of array structure, after completing, structure as shown in Figure 6.
(11) substrate that has resist figure is put into IBE etching apparatus, taking resist figure as mask, the metal level of substrate surface is carried out to etching; The ion beam current wherein adopting is that 30mA, electronic beam current are that 40mA, plate voltage are that 400V, accelerator card voltage are 200V, 20 DEG C of sample stage temperature, and 60 ° of sputter angles, etch period 120s, by the complete etching of golden film of substrate surface.
(12) soak the good sample of etching with acetone, remaining etching resist is removed, obtain the tunable artificial electromagnetic material of the N-type silicon/golden three-decker of gold/high concentration Uniform Doped, structure as shown in Figure 7.
The part that the present invention does not elaborate belongs to techniques well known.
Claims (18)
1. a preparation method for the tunable artificial electromagnetic material based on three-decker, is characterized in that the method comprises the steps:
Step (1) is chosen the SOI sheet of suitable twin polishing, cleans up, and in the doped silicon surface deposition layer of metal film of SOI sheet top layer;
Step (2) is separately got the silicon chip of single-sided polishing, applies a layer binder at polished surface;
Step (3) utilizes binding agent to deposit SOI sheet and the silicon chip bonding of metal film, and the silicon chip-SOI sheet having bondd is carried out to baking-curing;
Step (4) utilizes dry etching that the bottom monocrystalline silicon of SOI sheet in silicon chip-SOI chip architecture is carried out to etching attenuate;
Step (5) adopts potassium hydroxide wet etching, by complete remaining bottom monocrystalline silicon corrosion on SOI sheet in silicon chip-SOI chip architecture, the silica intermediate layer of SOI sheet is exposed;
Step (6) adopts hydrofluoric acid wet etching, by complete the silica intermediate layer corrosion of SOI sheet in silicon chip-SOI chip architecture, exposes doped silicon surface;
The doped silicon surface deposition layer of metal film of step (7) in step (6), thus the three-decker of metal-doped dielectric-metal on silicon chip, formed;
Step (8) applies photoresist in gained metal-doped dielectric-metal three-decker, and carries out front baking in baking oven or hot plate;
Step (9) utilizes lithographic equipment to expose to substrate, obtains designed two-dimensional and periodic array micro-nano structure figure on photoresist, and is placed in baking oven or hot plate carries out post bake;
Step (10) adopts dry etching that the photoetching offset plate figure in step (9) is transferred to the upper strata metal in metal-doped dielectric-metal three-decker;
Step (11) is soaked the sample after etching with organic solvent, and remaining photoresist after etching is removed, and can obtain the tunable artificial electromagnetic material based on metal-doped dielectric-metal three-decker.
2. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, it is characterized in that, the SOI sheet of described step (1) is made up of bottom monocrystalline silicon, intermediate layer silica, top layer doped silicon, underlayer thickness is 300～450 μ m, intermediate layer thickness is 100～300nm, top layer is that thickness is N-type silicon or the P type silicon of the high concentration Uniform Doped of 0.5～1.5 μ m, and doping content is 10
18～10
20cm
-1.
3. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, is characterized in that, the deposition process of described step (1) is magnetron sputtering method or vapour deposition method.
4. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, is characterized in that, the metal film in described step (1) is gold, copper or silver, and thickness of metal film is 100～200nm.
5. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, is characterized in that, the binding agent in described step (2) is the glue of a kind of high temperature resistant, strong alkali-acid resistance and organic solvent.
6. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, is characterized in that, the bonding mode in described step (3) is the silicon chip phase adhesion that the metallic diaphragm of SOI and spin coating is had to binding agent.
7. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, it is characterized in that, roasting plant in described step (3) is baking oven and hot plate, and temperature range is 100～120 DEG C, and baking time is 5～10min.
8. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, is characterized in that, the dry etching in described step (4) is plasma etching or ion beam etching.
9. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, is characterized in that, the thickness after the bottom monocrystalline silicon attenuate of the SOI sheet in described step (4) is 20～50 μ m.
10. the preparation method of a kind of tunable artificial electromagnetic material based on three-decker according to claim 1, is characterized in that, in described step (7), deposition process is magnetron sputtering method or vapour deposition method.
The preparation method of 11. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, is characterized in that, in described step (7), depositing metallic films is gold, copper or silver, and thickness of metal film is 40～60nm.
The preparation method of 12. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, it is characterized in that, in described step (8), the thickness of photoresist is 100～200nm, and pre-bake temperature scope is 100～120 DEG C, and baking time is 20～30min.
The preparation method of 13. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, it is characterized in that, the lithographic equipment in described step (9) is for approaching contact photoetching machine, projection aligner or e-beam direct-writing exposure machine.
The preparation method of 14. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, it is characterized in that, the live width of the two-dimensional and periodic array micro-nano structure figure in described step (9) is 0.3～60 μ m, and the cycle is 1.2～160 μ m.
The preparation method of 15. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, is characterized in that, the post bake temperature in described step (9) is: 100～120 DEG C, the post bake time is: 20～30min.
The preparation method of 16. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, is characterized in that, the dry etching in described step (10) is ion beam etching or plasma etching.
The preparation method of 17. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, it is characterized in that, etching depth in described step (10) should equal metal-doped dielectric-metal three-decker metal layer thickness at the middle and upper levels, and error is no more than 5%.
The preparation method of 18. a kind of tunable artificial electromagnetic materials based on three-decker according to claim 1, is characterized in that, the organic solvent in described step (11) is the solvent that can dissolve photoresist.
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| US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
| CN1234601A (en) * | 1998-01-30 | 1999-11-10 | 佳能株式会社 | Method for recovering SOI substrate and regenerated substrate |
| CN101702067A (en) * | 2009-10-29 | 2010-05-05 | 电子科技大学 | Terahertz plane adsorbing material |
| CN102303429A (en) * | 2011-06-21 | 2012-01-04 | 电子科技大学 | Tunable flat absorbing material for electromagnetic waves |
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