CN102569233A - Packaging structure - Google Patents
Packaging structure Download PDFInfo
- Publication number
- CN102569233A CN102569233A CN2010105920238A CN201010592023A CN102569233A CN 102569233 A CN102569233 A CN 102569233A CN 2010105920238 A CN2010105920238 A CN 2010105920238A CN 201010592023 A CN201010592023 A CN 201010592023A CN 102569233 A CN102569233 A CN 102569233A
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- CN
- China
- Prior art keywords
- crystal grain
- district
- die pad
- connecting rod
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention provides a packaging structure. The packaging structure comprises a grain seat, a grain adhered with the grain seat, a lead area and a connecting link area connected with the grain seat, wherein the grain is electrically connected with the lead area through at least one first lead and electrically connected with the linkage rod through at least one second lead. According to the packaging structure, the connecting link rod in a lead frame is simultaneously taken as a pin, so that the number of the pin can be increased, and the grain can be packaged in a smaller packaging structure. Therefore, the packaging cost of an integrated circuit can be greatly reduced, and further, the overall cost of the integrated circuit is lowered.
Description
Technical field
The invention relates to a kind of encapsulating structure, refer to a kind of especially with the connecting rod of lead electric connection lead frame and the encapsulating structure of crystal grain.
Background technology
Encapsulation (Package) is that preceding processing procedure is machined each crystal grain (Die) independent separate in back institute's wafer that provides (Wafer), and on outer signal line to the lead frame and coating.The function of encapsulation is the ability that provides crystal grain to possess anti-adverse environment, easy operation, the use of safety.For reaching above-mentioned function, encapsulation must provide the suitable shell of crystal grain to receive moisture, heat, The noise to protect inner crystal grain body to prevent crystal grain, and can circuit signal be connected to outside so that test and use.Lead frame is played the part of crystal grain and is carried in encapsulation, electric, heat conducting task, assembly weight also rely its support, also are the persons of having the call in all encapsulating materials.
See also Fig. 1, be the package system sketch map before the cutting behind traditional bonding wire.Crystal grain 10 is adhered on the die pad (Die Pad) 20.Connecting rod (Tie Bar) 25 connects die pad 20 and rail (Rail) 30, to support die pad 20.Pin (Lead) 40 sees through parallel (Dam-bar) 35 and is connected to rail 30, with supporting pins 40.Lead 45 electrically connects the solder joint (Bond Pad) 15 and pin 40 on the crystal grain 10.To carry out afterwards cutting after the sealing, each packaging body is separated.
The development trend of integrated circuit (IC, Integrated Circuit) is toward high integration, to reduce chip area and cost.Yet the function of present IC is numerous, and the pin of required encapsulation is also many.Therefore, though often dwindled the area of crystal grain, right in cooperating the required number of pins of IC, the selection of encapsulating structure can be limited in the package type of large-size.The cost that packaging cost accounts for an IC is approximately about half, and it is limited to dwindle the cost that chip area saves merely.How further to reduce the IC cost and be important problem on the IC development trend now.
Summary of the invention
In view of the integrated circuit in the prior art has under the number of pins quantitative limitation; Cause selecting for use of package type to be restricted; The object of the present invention is to provide a kind of encapsulating structure; Utilize connecting rod in the lead frame simultaneously as pin,, make crystal grain can be packaged in littler encapsulating structure to increase spendable number of pins.Therefore, the present invention can significantly reduce the packaging cost of integrated circuit, and then the overall cost of integrated circuit is descended.
For reaching above-mentioned purpose, the invention provides a kind of encapsulating structure, comprise a die pad, a crystal grain, a conductor section and a connecting rod district.Crystal grain is adhered to die pad, and the connecting rod district then connects die pad.Wherein, crystal grain electrically connects crystal grain and conductor section with at least one first lead, electrically connects crystal grain and connecting rod with at least one second lead.
The present invention also provides another kind of encapsulating structure, comprises several die pad, several crystal grain, a conductor section and a connecting rod district.Several crystal grain are adhered to several die pad respectively and are electrically connected to conductor section respectively with several first leads.One connecting rod district, connect several die pad at least one of them and with at least one second lead be electrically connected to several crystal grain at least one of them.
The present invention utilizes connecting rod in the lead frame simultaneously as pin, to increase spendable number of pins, makes crystal grain can be packaged in littler encapsulating structure.Therefore, the present invention can significantly reduce the packaging cost of integrated circuit, and then the overall cost of integrated circuit is descended.
Above general introduction and ensuing detailed description are all exemplary in nature, are in order to further specify claim of the present invention.And about other purpose of the present invention and advantage, will set forth in follow-up explanation and accompanying drawing.
Description of drawings
Fig. 1 is the package system sketch map before the cutting behind the traditional bonding wire;
Fig. 2 is the sketch map according to the encapsulating structure of one first preferred embodiment of the present invention;
Fig. 3 is the sketch map according to the encapsulating structure of one second preferred embodiment of the present invention;
Fig. 4 is the sketch map according to the multichip packaging structure of one the 3rd preferred embodiment of the present invention.
[primary clustering symbol description]
Prior art:
Die pad 20
Connecting rod 25
Parallel 35
The present invention:
Encapsulating structure 100,200
Crystal grain 110,210A, 210B, 210C, 210D
Solder joint 115,215
Die pad 120,220A, 220B, 220C
Connecting rod 125,225
Pin 140,240
First lead 145,245
The second lead 145A, 245A
Excessive glue prevents to distinguish 250
Interior routing district 255
Crystal grain adhesioin zone 256
Embodiment
See also Fig. 2, be sketch map according to the encapsulating structure of one first preferred embodiment of the present invention.Encapsulating structure 100 comprises a crystal grain 110, a die pad 120, a conductor section and a connecting rod district.Crystal grain 110 is adhered on the die pad 120 with a viscose glue.There is signal output part point or the signal input part point of several solder joints 115 as crystal grain 110 internal circuits on the surface of crystal grain 110.Conductor section comprises several pins 140, sees through the solder joint 115 that first lead 145 is electrically connected to crystal grain 110, makes crystal grain 110 see through these pins 140 and electrically connects with external circuit, with output signal or receiving inputted signal.In addition, the connecting rod district comprises at least one connecting rod 125, connects die pad 120, in order to the effect that before cutting, provides die pad 120 to support.At present embodiment, encapsulating structure is a QFN 2x2 encapsulating structure, has 12 pins 140, and 3 pins 140 are respectively arranged on each side, and has 4 connecting rods 125 and be respectively on the orientation of four corners of encapsulating structure.The part solder joint 115 of crystal grain 110 sees through the second lead 145A and is electrically connected to connecting rod 125.Therefore, the encapsulation of the QFN 2x2 of present embodiment can provide 13 " pins " (comprising a connecting rod).And encapsulating structure of the present invention can directly use the design of traditional lead frame, and does not need to open in addition film, so quite high with existing encapsulation degree of integration.
Then, see also Fig. 3, be sketch map according to the encapsulating structure of one second preferred embodiment of the present invention.The main Discrepancy Description of present embodiment and embodiment shown in Figure 2 is following.Crystal grain 110 comprises a control circuit 105A and one drive circuit 105B, and control circuit is mainly in order to receiving the input signal by the outside input, and according to the running of these input signal control Driver Circuit 105B.Drive circuit 105B is then in order to drive circuit external, for example: other integrated circuit or metal oxide semiconductcor field effect transistor etc.Because drive circuit 105B need drive external circuit; So electric power height that required electric power is required far beyond control circuit 105A; So connect a driving power if see through same pin, then the noise that on pin, causes of drive circuit 105B may influence the circuit operation correctness of control circuit 105A.Therefore, crystal grain 110 needs to see through two even above pin, comes to provide respectively the electric power input of control circuit 105A and drive circuit 105B.In the present embodiment; Control circuit 105A and drive circuit 105B see through the second lead 145A and are electrically connected to two different connecting rods 125 in the connecting rod district respectively; Especially to be good, to be coupled to same driving power whereby to two connecting rods 125 in the payment to a porter.And because the connecting rod 125 that control circuit 105A and drive circuit 105B are electrically connected not is direct connection; But (for example: die pad 120) couple see through other circuit unit; Therefore the noise that caused of drive circuit 105B can reach control circuit 105A after decay, thereby reduces the influence possible to control circuit 105A of above-mentioned noise.In addition because connecting rod 125 connects die pad 120, according to the circuit design of different crystal grain 120, crystal grain 110 can insulating cement or conducting resinl be adhered on the die pad 120.Encapsulation at the QFN of present embodiment 2x2 can provide 14 " pins " (comprising two connecting rods).
Come again, see also Fig. 4, be sketch map according to the multichip packaging structure of one the 3rd preferred embodiment of the present invention.Encapsulating structure 200 comprises several die pad 220A, 220B, 220C, several crystal grain 210A, 210B, 210C, 210D, a conductor section and a connecting rod district.At present embodiment, crystal grain 210A is a controller crystal grain, and crystal grain 210B, 210C, 210D are that N type metal oxide semiconductor field-effect transistor crystal grain is that example describes.The QFN 5x5 that is encapsulated as of present embodiment encapsulates, and its conductor section comprises 40 lead-in wires 240, in each side 10 lead-in wires 240 is arranged respectively.Wherein the part pin electrically connects with die pad 220B, 220C respectively, connects pin with the drain electrode as N type metal oxide semiconductor field-effect transistor crystal grain.All the other then do not see through first lead 245 and each crystal grain electric connection with the pin that die pad electrically connects.Crystal grain 210A part solder joint 215 then sees through the connecting rod 225 that second lead is electrically connected to the connecting rod district.
It should be noted that; Privates 245B electrically connects the interior routing district 255 of crystal grain and die pad, and for example: privates 245B electrically connects interior routing district 255 and crystal grain 210B and the interior routing district 255 of privates 245B electric connection die pad 220A and the solder joint 215 of crystal grain 210A of die pad 220C.And the area of crystal grain and die pad less with cost-effective situation under, interior routing district 255 is the excessive glue phenomenon (Resin Bleed) because of the viscose glue of adhesion crystal grain and die pad through regular meeting, the area in routing district 255 is not enough in making, even causes routing to fail.The present invention in a crystal grain adhesioin zone 256 of die pad the corresponding region of adhesion crystal grain (promptly in order to) and in be provided with between the routing district 255 one overflow glue prevent to distinguish 250 invade with the glue that prevents to overflow in routing district 255, and guarantee that there are enough routing spaces in interior routing district 255.It can be a groove structure that excessive glue prevents to distinguish 250, to hold excessive glue; Can be a projection perhaps, make the glue that overflows by shield beyond interior routing district 255.
To sum up explanation, the present invention utilize connecting rod in the lead frame simultaneously as pin, to increase spendable number of pins, make crystal grain can be packaged in littler encapsulating structure.Therefore, the present invention can significantly reduce the packaging cost of integrated circuit, and then the overall cost of integrated circuit is descended.
As stated, the present invention meets patent three important documents fully: the usability on novelty, progressive and the industry.The present invention discloses with preferred embodiment hereinbefore, so is familiar with this operator and it should be understood that this embodiment only is used to describe the present invention, and should not be read as restriction scope of the present invention.It should be noted,, all should be made as and be covered by in the category of the present invention such as with the variation and the displacement of this embodiment equivalence.Therefore, protection scope of the present invention is when being as the criterion with the scope that claims were defined.
Claims (10)
1. an encapsulating structure is characterized in that, comprises:
One die pad;
One crystal grain is adhered to this die pad;
One conductor section; And
One connecting rod district connects die pad;
Wherein, this crystal grain electrically connects this crystal grain and this conductor section with at least one first lead, electrically connects this crystal grain and this connecting rod with at least one second lead.
2. encapsulating structure according to claim 1; It is characterized in that; This crystal grain comprises a control circuit and one drive circuit, and this connecting rod district comprises one first connecting rod and one second connecting rod, and this drive circuit sees through this second lead and is electrically connected to this first connecting rod.
3. encapsulating structure according to claim 2 is characterized in that this die pad is adhered to this die pad with an insulating cement.
4. encapsulating structure according to claim 2 is characterized in that, this control circuit sees through this second lead and is electrically connected to this second connecting rod.
5. according to one of them described encapsulating structure of claim 1 to 4, it is characterized in that this conductor section has 12 pins.
6. an encapsulating structure is characterized in that, comprises:
Several die pad;
One conductor section;
Several crystal grain are adhered to these several die pad respectively and are electrically connected to this conductor section respectively with several first leads; And
One connecting rod district, connect these several die pad at least one of them and with at least one second lead be electrically connected to these several crystal grain at least one of them.
7. encapsulating structure according to claim 6; It is characterized in that; These several crystal grain comprise a control circuit crystal grain and at least one metal oxide semiconductcor field effect transistor crystal grain, and this control circuit crystal grain is electrically connected to this connecting rod district with this at least one second lead.
8. according to claim 6 or 7 described encapsulating structures; It is characterized in that; At least one of them has routing district in to these several die pad, an excessive glue prevents a district and a crystal grain adhesioin zone; The glue that should overflow prevents that the district is positioned between this routing district and this crystal grain adhesioin zone; This crystal grain adhesioin zone in order to see through these several crystal grain of viscose glue adhesion one of them, this excessive glue prevent the district in order to prevent this viscose glue overflow to should in the routing district, and should in the routing district in order to see through lead be electrically connected to these several die pad one of them.
9. encapsulating structure according to claim 8 is characterized in that, this excessive glue prevents that the district from being a groove.
10. encapsulating structure according to claim 8 is characterized in that, this excessive glue prevents that the district from being a projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105920238A CN102569233A (en) | 2010-12-09 | 2010-12-09 | Packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105920238A CN102569233A (en) | 2010-12-09 | 2010-12-09 | Packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102569233A true CN102569233A (en) | 2012-07-11 |
Family
ID=46414285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105920238A Pending CN102569233A (en) | 2010-12-09 | 2010-12-09 | Packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102569233A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4534105A (en) * | 1983-08-10 | 1985-08-13 | Rca Corporation | Method for grounding a pellet support pad in an integrated circuit device |
| KR20030050470A (en) * | 2001-12-18 | 2003-06-25 | 삼성테크윈 주식회사 | Semiconductor package and lead frame used in manufacturing such |
| US6627977B1 (en) * | 2002-05-09 | 2003-09-30 | Amkor Technology, Inc. | Semiconductor package including isolated ring structure |
| US20040238921A1 (en) * | 2003-05-28 | 2004-12-02 | Silicon Precision Industries Co., Ltd | Ground-enhanced semiconductor package and lead frame for the same |
| CN101056502A (en) * | 2006-04-12 | 2007-10-17 | 亚泰影像科技股份有限公司 | Electronic device for avoiding excessive glue pollution |
-
2010
- 2010-12-09 CN CN2010105920238A patent/CN102569233A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4534105A (en) * | 1983-08-10 | 1985-08-13 | Rca Corporation | Method for grounding a pellet support pad in an integrated circuit device |
| KR20030050470A (en) * | 2001-12-18 | 2003-06-25 | 삼성테크윈 주식회사 | Semiconductor package and lead frame used in manufacturing such |
| US6627977B1 (en) * | 2002-05-09 | 2003-09-30 | Amkor Technology, Inc. | Semiconductor package including isolated ring structure |
| US20040238921A1 (en) * | 2003-05-28 | 2004-12-02 | Silicon Precision Industries Co., Ltd | Ground-enhanced semiconductor package and lead frame for the same |
| CN101056502A (en) * | 2006-04-12 | 2007-10-17 | 亚泰影像科技股份有限公司 | Electronic device for avoiding excessive glue pollution |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120711 |