CN102645625A - Short dummy test structure, method and apparatus for de-embedding - Google Patents

Abstract

The invention discloses a short dummy test structure, a method and an apparatus for de-embedding. The short dummy test structure includes a grounded shield layer above a substrate, at least two signal test pads, and a signal transmission line above the grounded shield layer and between the two signal test pads. The signal transmission line is electrically coupled to the grounded shield layer. The signal transmission line has a smaller total length than a total length of a corresponding signal transmission line and a device to be tested. The structure in the invention enables more precise RF modes during a high frequency.

Description

The virtual framework of short circuit, separate embedded method and device

Technical field

The present invention relates to a kind of test of semiconductor device, relate in particular to a kind of embedded method and device separated.

Background technology

The integrated circuit that is formed on the semiconductor substrate comprises many active and passive blocks, for example resistor, inductor, capacitor, commentaries on classics resistance device, amplifier or the like.They can present these assemblies of design specification manufacturing of (for example resistance value, inductance value, capacitance, gain or the like) desirable physics/electric characteristics according to definition.Though want to verify each assembly of being obedient to the particular design specification and making, typically, after being incorporated into circuit, can not test assembly separately apace.Therefore, on wafer, make " independence " of indivedual IC assemblies and duplicate, with assembly with sampling technology and same physics/electric characteristics manufacturing; And suppose that " independence " duplicate indivedual IC assemblies that measured physics/electric characteristics representes not have test.

At test period, " independence " duplicates, and is called " device to be measured " (DUT), is to be electrically connected to wire head and testing cushion, and it is connected to external test arrangements again.Though physics/electric characteristics should accurately be represented DUT those (and indivedual IC assemblies); Testing cushion and wire head contribution physics/electric characteristics; Be called " parasitic animal and plant (parasitics) " resistance value, capacitance and the inductance value of testing cushion and wire head (for example from), it provides the characteristic of the test of DUT.Can obtain parasitic animal and plant to manifest the intrinsic propesties of DUT by the technology that is called " separating embedded ".

Therefore, separating embedded method accurately need lower the parasitic animal and plant contribution and accurately describe the intrinsic characteristic of DUT (and finally, indivedual IC assemblies are represented).At present; Separate embedded method on the wafer and be called " open circuit-short circuit ", " open-thru "; And " thru-reflect-line " (" TRL ") has been widely used in the explanation parasitic animal and plant, for example stems from resistance value, inductance value and the capacitance of testing cushion and wire head at high frequency (GHz grade).Yet, separate embedded method at present and meet with some problems, for example short circuit is crossed and is separated embedded (short over de-embedding), comes from the excessive parasitic animal and plant contribution of mesoporous and interconnection, and lacks three-dimensional and separate embedded ability.These problems become more serious when high frequency, for example in the frequency near 50Ghz.Therefore, when the existing embedded method of separating has been to be applicable to desired purpose, be fully to satisfy each aspect.

Summary of the invention

In order to solve prior art problems, a ground floor face of this disclosure comprises a short circuit virtual test framework.Short circuit virtual test framework comprises a ground shield, is positioned at substrate top; At least binary signal testing cushion; One signal transmssion line is above this ground shield and between the binary signal testing cushion.In an embodiment, this signal transmssion line is conductively coupled to this ground shield, and wherein the total length of this signal transmssion line less than a total length of a device to be measured of a corresponding signal transmssion line and a test structure.

Another aspect of this disclosure comprises separates embedded device.Separate embedded device and comprise a test structure, test structure comprises that a device to be measured (DUT) is couple to a left signal pad and is couple to a right signal pad via one second transmission line via one first transmission line, and a short-circuit test framework.The short-circuit test framework comprises a ground shield, is positioned on the substrate; At least binary signal testing cushion; And one the 3rd signal transmssion line, on the ground shield and between this binary signal testing cushion.The 3rd signal transmssion line is conductively coupled to this ground shield, and wherein the total length of the 3rd transmission line less than the total length of this first transmission line, this device to be measured and this second transmission line.

Another aspect of this disclosure comprises the embedded method of separating.Separating embedded method comprises: form a test structure, this test structure comprises that a device to be measured (DUT) is couple to a left signal pad and is couple to a right signal pad by one second transmission line by one first transmission line; Form a plurality of virtual test frameworks; At least one virtual test framework is a short circuit virtual test framework; This short circuit virtual test framework comprise the ground shield on the substrate, at least the binary signal testing cushion and on the ground shield and this binary signal testing cushion between one the 3rd signal transmssion line; Wherein the 3rd signal transmssion line is conductively coupled to this ground shield, and wherein the total length of the 3rd transmission line less than the total length of this first transmission line, this device to be measured and this second transmission line; Measure the transmission parameter of this test structure and this virtual test framework; And the intrinsic transmission parameter that uses this DUT of transmission parameter decision of this test structure and these a plurality of virtual test frameworks.

The present invention enables more accurate RF pattern when high frequency.

For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended accompanying drawing, specifies as follows.

Description of drawings

Fig. 1 is that a process flow diagram is separated embedded method according to this disclosure embodiment explanation;

Fig. 2 A, Fig. 3 A-Fig. 3 B and Fig. 4 A-Fig. 4 B are used to separate the vertical view of the various test structures of embedded method according to Fig. 1;

Fig. 2 B is used to separate the cut-open view of the various test structures of embedded method according to Fig. 1;

Fig. 5 A-Fig. 5 B is to have the three-dimensional accompanying drawing that the slot form is floated the sloping wave CPW transmission line cover and had the sloping wave CPW transmission line that slot form ground connection covers according to disclosure of the present invention;

Fig. 6 explains the embedded method of separating according to another embodiment of the present invention;

Fig. 7 A-Fig. 7 C shows the vertical view of test structure according to embodiments of the invention;

Fig. 8 A-Fig. 8 C shows the vertical view of test structure according to embodiments of the invention;

Fig. 9 A-Fig. 9 B shows the skeleton view and the cut-open view of short virtual test framework according to embodiments of the invention;

Explanation shows the parasitic equivalent electrical circuit that will be separated embedded test structure to Figure 10 according to embodiments of the invention;

Demonstration obtains the block scheme of system of the intrinsic propesties of DUT to Figure 11 according to embodiments of the invention;

Figure 12 is according to the block scheme of the workstation of the system of embodiments of the invention demonstration Figure 11; And

Figure 13 shows a two-port network.

Wherein, description of reference numerals is following:

11,13,15,17,19～step

30～device to be measured;

40～test structure;

44,46,48,50～testing cushion;

52,54～transmission line;

55～length;

56～length;

58A～lead;

58B～lead;

65～width;

70～width;

75～conductive layer;

80～mesoporous;

85～left semi-frame structure;

90～right semi-frame structure;

95,100～virtual test framework;

105～left testing cushion;

110～right testing cushion;

115～transmission line;

125～left testing cushion;

130～right testing cushion;

135～transmission line;

145～framework;

160～virtual test framework;

170～right testing cushion;

175～transmission line;

185,190,195～section;

202,204,206,208～step

300,320,350～test structure;

302a, 302b, 304a, 304b, 306a, 306b～testing cushion;

310,311～transmission line;

308,312,314,315～ground wire;

301～device to be measured;

351～ground shield;

352,356～lead;

400,420,450～test structure;

410,411～signal transmssion line;

414,415～ground wire;

451～ground shield;

452,456～lead;

550～short circuit virtual test framework;

551～screen layer;

552～ground wire;

554～signal transmssion line;

556,558～mesoporous;

557～conductive layer;

600～equivalent electrical circuit;

602～the first ports;

604～the second ports;

700～system;

703～wafer;

704,705～test structure;

706,707～probe;

709～automatic network analyzer;

711～workstation;

715～server;

802～processor;

804～storer;

805～program;

806～analyser interface;

Embodiment

Fig. 1 is that a process flow diagram is separated embedded method according to this disclosure embodiment explanation.With reference to figure 1, method 11 in step 13, forms the test structure with device to be measured by step 13 beginning, and device to be measured is embedded in the test structure.Pad coupled device to be measured about test structure had.Device to be measured is divided into left and right sides framework with test structure.Left and right sides framework respectively has intrinsic transmission parameter.The step 15 of method 11 forms a plurality of virtual test frameworks.Pad about each of a plurality of virtual test frameworks comprises.The step 17 of method 11 is measured the transmission parameter of test structure and virtual test framework.The intrinsic transmission parameter of the step 19 use left and right sides framework of method 11 and the transmission parameter of test structure and virtual test framework are obtained the intrinsic transmission parameter of device to be measured.

Fig. 2 is vertical view and/or the cut-open view that is used to separate the various test structures of embedded method according to Fig. 1 to Fig. 4.With reference to figure 2A, device to be measured (DUT) 30 is embedded in test structure 40.DUT30 comprises active or passive RF (RF) device in the present embodiment.For instance, DUT 30 possibly be RF IC (RFIC) device.Test structure 40 comprises testing cushion 44,46,48 and 50.Testing cushion 44 and 46 comprises the signal testing pad, and testing cushion 48 and 50 comprises the earthing test pad.In the present invention, testing cushion 44 and 48 (and 46 and 50) is arranged in ground connection-signal-ground connection (GSG) configuration, and ground mat 48 approaches signal pad 44.In another embodiment, test structure 40 maybe be with other configurations of testing cushion 44 and 48 for example ground connection-signal (GS), ground connection-signal-ground connection-signal (GSGS), and/or any other suitable test configuration is implemented.In another embodiment, use known substrate-shield technology design and manufacturing test framework 40, so reduce the potential electromagnetic field radiation that leaks into the semiconductor substrate (not shown).At this shield technology, test structure 40 is manufactured on the substrate, and comprises substrate plane (not shown), and the substrate plane uses closeer mesoporous array ground connection with the shielding silicon substrate.Enforcement focuses on test structure and possibly be regarded as separate network and can not be couple to other networks.

With reference to figure 2A, signal testing pad 44 and 46 is conductively coupled to the transmission line 52 and 54 with length 55 and 56.Transmission line 52 and 54 also is couple to DUT 30.Therefore, possibly set up electrical connection between DUT 30 and the external device (ED).Earthing test pad 48 and 50 is coupled mutually via lead 58, and lead 58 is that transmission line is also referred to as ground wire.Earthing test pad 48 and ground wire 58 provide electrical ground RP to DUT 30.Testing cushion 44 and 48, transmission line 52 and 54, and ground wire 58, each comprises conductive material, for example aluminium, copper, aluminium copper, aluminium alloy, aldary, other metals, polysilicon and/or its combination.In the present embodiment, signal testing pad 44 and 46 and earthing test pad 48 and 50 have approaching dimension and material.Can recognize that testing cushion 44,46,48 and 50 possibly be couple to for example tester of external device (ED), so possibly set up being electrically connected between DUT 03 and the external device (ED).Transmission line 52 and 54 also comprises width 65 and 70 respectively.In the present embodiment, width 65 and 70 all approximates 0.4 micron (um) greatly, though width 65 and 70 maybe be greater than 0.4um in other embodiments.

With reference to figure 2B, the cut-open view of test structure 40 is described.Test structure 40 comprises a plurality of conductive layers 75 and mesoporous 80 that are couple to DUT 30.Conductive layer 75 possibly also be (inter-level) metal layer between the stratum of knowing, and possibly be present in a plurality of semiconductor devices.Conductive layer 75 and mesoporous 80 comprises conductive material, metal for example, for instance, aluminium, copper, aluminium copper, tungsten or its combination.DUT 30 possibly be embedded in any one of conductive layer 75 of test structure 40.In the present embodiment, lead 75 is represented to the transmission line 52 of signal testing pad 44 from an A to a B to couple DUT 30 with mesoporous 80 among Fig. 2 A, and conductive layer 75 is represented to the transmission line 54 of signal testing pad 46 from a C to a F to be couple to DUT 30 with mesoporous 80.

DUT 30 has the intrinsic transmission parameter of actual physics/electric characteristics of expression DUT 30.When DUT30 measures these intrinsic transmission parameters; Be couple to the assembly of DUT 30; The signal pad 44 of Fig. 2 A and 46 and transmission line 52 and 54 contribution parasitic animals and plants for example comprises that dead resistance, stray capacitance and stray inductance give measurement result, therefore influences the measuring accuracy of DUT 30 negatively.Various " separating embedded " method has been used for obtaining from the measurement result of DUT 30 the intrinsic transmission parameter of DUT.Yet when the test frequency increase, the parasitism contribution change that is couple to the assembly of DUT 30 possibly make greatly separates the embedded method out of true at present.For instance, with reference to figure 2B, the some C that has half the test structure 40 to the electrical signal path of some E by a C is to 40% of the electrical signal path of putting F.Be difficult to explain that for separating embedded method at present the some C that stems from test structure contributes to the parasitic animal and plant of the electrical signal path of some E.In other examples; (open-shout-through) mode of embedded method utilization " the open circuit short circuit is passed through " of separating in vogue at present; Separating an embedded aspect, DUT 30 is removed by test structure 40, and extra electrical short circuit connection (not shown) is positioned between the some B and some C of test structure.Because electrically short circuit connects and possibly comprise metal and possibly comprise resistance value and inductance value, should not be separate embedded.Yet " open circuit-short circuit-pass " separated embedded method and do not will consider this, and separates embedded electrical short circuit connection by measurement result effectively.Therefore, DUT30 use " open circuit-short circuit-pass " to separate the intrinsic transmission parameter that embedded method obtains can be very inaccurate.This phenomenon is called " short circuit is excessively separated embedded " (short over de-embedding), means separating the resistance value that removed during embedded and inductance value greater than the correct value that should be removed." short circuit is excessively separated embedded " problem becomes remarkable especially when high frequency, for instance, and in frequency during more than or equal to 50GHz." short circuit is excessively separated embedded " problem also changes poor when elongated when electrical short circuit connects.

In order to overcome the restriction of separating embedded method at present, embodiment utilizes the multiple testing framework to obtain the intrinsic transmission parameter precise results of DUT 30 at present.One of these multiple testing frameworks is test structure 40.With reference to figure 2A, DUT 30 is cut apart test structure 40 becomes a left semi-frame structure 85 and a right semi-frame structure 90.Left side semi-frame structure 85 has the parasitic animal and plant contribution; Possibly describe according to intrinsic transmission parameter, possibly represent (being called transmission matrix again) [left side _ right side], and right semi-frame structure 90 has the parasitic animal and plant contribution with abcd matrix; Possibly describe with intrinsic transmission parameter, possibly represent with abcd matrix [right side _ left side].Usually, abcd matrix can be obtained by two-port network, two-port network for example shown in Figure 13.

Abcd matrix defines according to total voltage and electric current:

V ₁＝A*V ₂+B*I ₂

I ₁＝C*V ₂+D*I ₂

V ₁With V ₂Be respectively the input and the output voltage of two-port network, and I ₁With I ₂Be respectively the input and the output current of two-port network.Therefore, A, B, C, D are the elements of the abcd matrix of two-port network, A, B, C, D characterization input voltage V ₁, output voltage V ₂, input current I ₁With output current I ₂Between relation.Aforesaid equation is arranged in matrix form, and abcd matrix becomes:

$\left[\begin{array}{c}{V}_1\\ I_1\end{array}\right]=\left[\begin{array}{cc}A& B\\ C& D\end{array}\right]\left[\begin{array}{c}{V}_2\\ I_2\end{array}\right]$

Abcd matrix possibly be also referred to as transmission matrix, or the transmission parameter of two-port network.Abcd matrix is characterised in that the abcd matrix of the two-port networks of calculating two or more serial connections, and the abcd matrix out of the ordinary of each network is multiple.Likewise, remove the abcd matrix contribution of the two-port network that is connected in series with other two-port networks, the inverse matrix of network is multiple.Another feature of abcd matrix is to obtain by the distribution parameter (S-parameter) of measuring two-port network; And mathematics ground conversion S-parameter measurements becomes abcd matrix (the details discussion of abcd matrix further is with reference to " Microwave Engineering the 2nd edition " 206-208 page or leaf of David M.Pozar institute works).In an embodiment, the length 55 of transmission line 52 is near the length 56 of transmission line 54. Testing cushion 44,46,48 and 50 all has approximately same dimension and comprises same material.Therefore, in an embodiment, possibly be considered to left semi-frame structure 85 and almost be symmetrical in right semi-frame structure 90.In other words, test structure 40 is symmetrical test structures.

Because signal testing pad 44 and earthing test pad 48 are positioned at the left of the DUT 30 of Fig. 2, they possibly be called left signal testing cushion 44 and left earthing test pad 48 respectively.Likewise, signal testing pad 46 possibly be called right signal testing cushion 46 and right earthing test pad 50 respectively with earthing test pad 50.Left signal testing cushion 44 possibly represented with abcd matrix [P_left] with the intrinsic transmission parameter (contribution of expression parasitic animal and plant) of left earthing test pad 48, and right signal testing cushion 46 possibly represented with abcd matrix [P_right] with the intrinsic transmission parameter of right earthing test pad 50.Can recognize that [P_left] and [P_right] considers that the current potential between pad and the interconnection is discontinuous.In an embodiment, because all testing cushion 44,46,48 and 50 have similar dimension and comprise approximate material, [P_left] is similar to [P_right], and [P_left] possibly all be called [Pad] with [P_right].Can recognize that in another embodiment, [P_left] possibly be similar to [P_right].

Testing cushion 44,46,48 and 50 possibly be couple to tester, so the transmission parameter of integrated testability framework 40 possibly obtained by measurement result.For instance, use instrument, network analyzer for example, the characteristic of test structure 40 possibly arrive according to the S-parameter measurement.These S-parameter measurements possibly be transformed into the abcd matrix form, with [A '] expression.The intrinsic transmission parameter of DUT 30 is called [A].Can recognize that the intrinsic transmission parameter [A] of DUT 30 possibly obtain by the transmission parameter of the measurement of the test structure of taking [A '], and remove the intrinsic transmission parameter (or ghost effect) of (or capturing) left semi-frame structure 85 and right semi-frame structure 90 by the transmission parameter of measuring [A '].Ground on the mathematics can be described as:

[A]=[Left_half] ^-1* [A '] * [Right_half] ^-1 Equation 1

[Left_half] ^-1With [Right_half] ^-1It is respectively the inverse matrix of [Left_half] and [Right_half].Because [A '] can be apace obtained by the measurement result of test structure 40, only need untie [Left_half] and [Right_half] calculating [A], and therefore accurately separate the DUT 30 that is embedded in beyond the test structure 40.At Fig. 2 A, can see left semi-frame structure 85 and comprise that left testing cushion 44,48 and transmission line 52,58A and right semi-frame structure comprise right testing cushion 46,50 and transmission line 54,58B.Therefore; The transmission parameter of left side semi-frame structure 85 possibly obtained with the transmission parameter of transmission line 52,58A by the transmission parameter of serial connection pad 44,48, and obtains the transmission parameter of right semi-frame structure 90 by the transmission parameter that serial connection is filled up 46,50 transmission parameter and transmission line 54,58B.Transmission parameter at the transmission line of abcd matrix form 52 and 58A is [Thru_left], and is [Thru_right] at the transmission parameter of the transmission line 54 of abcd matrix form and 58B.Therefore, can obtain following equation:

[Left_half]=[P_left] * [Thru_left] equation 2

[Right_half]=[P_right] * [Thru_right] equation 3

Therefore, equation 1 also possibly write as

[A]＝[P_left] ^-1*[Thru_left] ^-1*[A’]*[Thru_right] ^-1*[P_right] ^-1

With reference to figure 3A and Fig. 3 B, virtual test framework 95 and virtual test framework 100 are described.In an embodiment, use the technical design of aforesaid substrate-shielding and the virtual test framework 95 among the shop drawings 3A.Virtual test framework 95 comprises left testing cushion 105 and right testing cushion 110, is arranged in the GSG configuration and couples by the transmission line of length 120 with width 122.In an embodiment, length 120 is greater than 300um, and 500um, and width for instance 122 is about 0.4um, though in other embodiments, width 122 maybe be greater than 0.4um.The parasitic animal and plant contribution of transmission line 115 possibly and possibly represented with abcd matrix [M_1] with intrinsic transmission parameter description.In the present embodiment, the testing cushion 44,46,48 of the test structure 40 of the dimension of left testing cushion 105 and right testing cushion 110 and material and Fig. 2 A and 50 dimension and material proximate.Therefore, left testing cushion 105 is similar to [P_left] and [P_right], (both are approximate in the present embodiment) respectively with the transmission parameter (or parasitic animal and plant contribution) of right testing cushion 110.

In an embodiment, use the virtual test framework 100 of design of aforesaid substrate shield technology and shop drawings 3B.The virtual test framework comprises left testing cushion 125 and right testing cushion 130, and it is arranged with the GSG configuration and is coupled by the transmission line 135 of length 140 with width 142.In an embodiment, length 120 about 500um of transmission line 115, length 140 about 1000um of transmission line 135.The parasitic animal and plant contribution of transmission line 135 possibly described with intrinsic transmission parameter, and representes with abcd matrix [M_21].In the present embodiment, the dimension of left testing cushion 125 and right testing cushion 130 and material proximate are in the testing cushion 44,46,48 of the test structure 40 of Fig. 2 A and 50 dimension and material.Therefore, left testing cushion 125 is similar to [P_left] and [P_right] respectively with the transmission parameter (or parasitic animal and plant contribution) of right testing cushion 130.The N multiple of the length 120 of length 140 about transmission lines 115 of transmission line 135.In the present embodiment, N=2, the length 140 that means transmission line 135 approximately is the twice of the length 120 of transmission line 115.Well known, abcd matrix possibly be connected in series.Therefore, the transmission parameter of transmission line 135 [M_21] approximates [M_1] * [M_1] greatly.

So but the testing cushion 105 of virtual test framework 95 and 110 possibly be couple to the transmission parameter of external test facility energy measurement virtual test framework 95.Possibly use the S-parameter to carry out the measurement of transmission parameter, measurement result possibly convert the abcd matrix form to, so can obtain the transmission parameter (abcd matrix form) of the measurement of the virtual test framework 95 that is described as [TL_l1].Likewise, possibly obtain the abcd matrix form virtual test device 100 transmission parameter and be described as [TL_l2].Can obtain following equation:

[TL_l1]=[P_left] * [M_1] * [P_right] (equation 4)

[TL_12]＝[P_left]*[M_2l]*[P_right]

=[P_left] * [M_l] * [M_1] * [P_right] (equation 5)

Via above-mentioned equational mathematical operation, [P_left] or [P_right] and [M_1] possibly describe with following equation:

[P_left] * [P_right]=[TL_l1] * [TL_l2] ^-1* [TL_l1] (equation 6)

[M_1]=[P_left] ^-1* [TL_l1] * [P_right] ^-1(equation 7)

Because [TL_l1] and [TL_l2] are obtained by measurement result, so can accurately calculate [P_left], [P_right] and [M_1].In an embodiment, calculate the following result of [P_left] and [P_right]:

$[P\_\mathrm{Left}]=\left[\begin{array}{cc}1& B/2\\ C/(1+(A+D)/2)& 1+\mathrm{BC}/2(1+A+D)/2)\end{array}\right]$ (equation 8)

$[P\_\mathrm{Right}]=\left[\begin{array}{cc}1+\mathrm{BC}/2(1+(A+D)/2)& B/2\\ C/(1+(A+D)/2)& 1\end{array}\right]$ (equation 9)

Wherein A, B, C and D represent the element of the abcd matrix of test structure 40.Possibly obtain the ABCD parameter by the S-parameter of measuring test structure 40, and conversion three S-parameters in ground become the ABCD parameter on the mathematics.

As aforementioned, [P_left] representes one the intrinsic transmission parameter (or parasitic animal and plant contribution) of left testing cushion 105,125,44 and 48.[P_right] representes one the intrinsic transmission parameter (or parasitic animal and plant contribution) of right testing cushion 110,130,46 and 50.[M_1] expression length of transmission line is similar to the intrinsic transmission parameter (or parasitic animal and plant contribution) of the length 120 of transmission line 115.User's formula 8 and 9 also can be calculated [Thru_left] and [Thru_right].Afterwards, user's formula 2 and 3 is calculated [Left_half] and [Right_half].In an embodiment, transmission line 52 and 54 length 55 and 56 are similar to the length 120 of transmission line 115 respectively.Therefore, [Thru_left] is similar to [M_1] with [Thru_right]., also possibly obtain [Thru_left] and [Thru_right] because but user's formula 4-9 calculates [M_1].

In addition, the left testing cushion 105 intrinsic transmission parameters with transmission line 115 serial connections possibly become [TL_left] with the abcd matrix pattern description.Also can multiply by [P_right] by measuring transmission parameter [TL_l1] ^-1Obtain [TL_left1], because [TL_left1] representes the intrinsic transmission parameter of the framework 45 the same with the virtual test framework that does not have right testing cushion 110 95.Based on giving reasons, draw the framework that demonstrates expression [TL_left1] at virtual test framework 95 with arrow and dotted line.Likewise, the transmission parameter [TL_left2] of representing the framework 150 identical with the intrinsic transmission parameter of the left testing cushion 125 of transmission line 135 serial connection with the virtual test framework that does not have right testing cushion 130 100.Based on illustration purpose, draw the framework that demonstrates expression [TL_left2] at virtual test framework 100 with arrow and dotted line.By the transmission parameter of measuring [TL_l2] multiply by [P_right] ^-1Obtain [TL_left2], wherein [P_ight] ^-1The inverse matrix of expression [P_right].

With reference to figure 4A, virtual test framework 160 is described.In an embodiment, use the technical design and manufacturing virtual test framework 160 of aforesaid substrate-shielding.Virtual test framework 160 comprises left testing cushion 165 and right testing cushion 170, and it is arranged with the GSG configuration and is coupled by the transmission line 175 of length 180 with width 182.In an embodiment, width 182 about 0.4um, though in other embodiments, width 182 maybe be greater than 0.4 um.Testing cushion 165 and 170 possibly be couple to the measurement result that external test is obtained the transmission parameter of whole virtual test framework 160.For instance, but energy measurement S-parameter and be transformed into abcd matrix [THRU], the wherein transmission parameter of the whole virtual test framework 160 of [THRU] expression (or parasitic animal and plant contribution).Transmission line possibly resolve into three section-sections 185, section 190 and section 195 in idea.In the present embodiment, the length of section 185 is similar to the length 120 of transmission line 115 of the virtual test framework 95 of Fig. 3 A.In another embodiment, the length of section 185 is similar to the length 140 of transmission line 135 of the virtual test framework 100 of Fig. 3 B.

With reference to figure 4A, the length of section 190 approximately is similar to the length 55 of transmission line 52 of the test structure 40 of Fig. 2 A, and the length of section 195 is similar to the length 56 of the transmission line 54 of test structure 40.Therefore, the length 180 of transmission line 175 is similar to the sum total of length 120, length 55 and length 56.In addition, virtual test framework 160 possibly resolve into the following framework that is illustrated in Fig. 4 B in idea: the framework 145 of Fig. 3 A (the virtual test framework 95 that does not have right pad 110), do not have the left semi-frame structure 85 of left side pad 44 and 48 and Fig. 2 A right side semi-frame structure 90 at Fig. 2 A.On the mathematics, available following formula is described and is decomposed:

[THRU]=[TL_left1] * [Left_half] * [P_left] ^-1* [Right_half] (equation 10)

Can obtain [THRU] fast from the measurement result of virtual test framework 160, and can use virtual test framework 95 and 100 and use mathematical operation to calculate [P_left], and can [P_left] be calculated to be [TL_l1] * [p_right] ^-1Or [P_left] * [M_1].Therefore, possibly untie [Left_half] and [Right_half].

Because obtain [Left_half] and [Right_half], user's formula 1, wherein [A]=[Left_half] ^-1* [A '] * [Right_half] ^-1, can untie [A] (intrinsic transmission parameter of DUT 30).The intrinsic transmission parameter of the DUT 30 that unties is represented the actual transmissions characteristic of DUT 30, has nothing to do in coupling the parasitic animal and plant contribution of DUT 30 to the pad and the transmission line of external device (ED).

Use test framework 40,95,100 and 160, below the order of action sum total is separated embedded summary:

1) scattering matrix of transmission line 135, test structure 160 and the test structure of the transmission line 115 of measurement length 120, length 140.

2) conversion transmission length 115 with 135 and the scattering matrix of test structure 160 and 40 be respectively abcd matrix [M_1], [M_2l], [THRU] and [A].

3) abcd matrix that calculates work survey testing cushion 44,48 and right side testing cushion 46,50 is to try to achieve [P_left] and [P_right] respectively.

4) abcd matrix that calculates transmission line 52 and 54 is to try to achieve [Thru_left] and [Thru_right] respectively.

5) calculate the intrinsic transmission parameter of abcd matrix [A] in the hope of DUT 30.

In the present embodiment, test structure 40,95,100 and 160 is formed on the same semiconductor wafer.In present embodiment, use same technology and technology (65nm RF-CMOS technology for instance) manufacturing test framework 40,95,100 and 160.Can recognize that DUT 30 possibly form and form along with test structure.In another embodiment, possibly use different process manufacturing test framework 40,95,100 and 160 and be formed at different wafers.

Can recognize that test structure 40,95,100 and 160 has three-dimensional architecture.In certain embodiments, the parasitic animal and plant composition for example need be separated embedded transmission line and/or fill up the stratum that it(?) maybe not can be positioned at same plane.For instance, illustrated like Fig. 2 B, extend along the X axle to the transmission of some F by a D, and not only extend and extend to the mesoporous and metal level of some D along the Y axle along the X axle by a C.Because also have width (can't observe but can observe) to the transmission line of some F, be two dimensional character to the transmission line of putting F by a D by Fig. 2 A by Fig. 2 B by a D.Because comprise extra dimension (Y axle) by a C to the transmission line of F (transmission line 54), transmission line 54 is three-dimensional features.Tradition is separated embedded method and is difficult to separate embedded three-dimensional feature, the transmission line 54 that shows of Fig. 2 B for example, but can use said method and framework to overcome such difficulty.

In certain embodiments, co-plane waveguide (CPW) is used in the various transmission lines of test structure 40,95,100 and 160.As aforementioned, semiconductor device possibly comprise metal layer between a plurality of stratum.These CPW characteristics possibly put any one deck as for metal layer between stratum.Measuring (for example S-parameter) possibly directly carry out on the CPW characteristic with the mistake of the layout between the parasitic animal and plant that prevents the special-purpose measurement of separating embedded virtual framework (for example test structure 40) coupling.This technology allows more accurate transmission line model.For instance, Table I is listed the transmission line of several spendable different shapes.

Table I

At the CPW of table 1 is the co-plane waveguide transmission line that does not have shielding, and FSCPW1-FSCPW3 is the transmission line with the shielding of slot form suspension joint, and GSCPW1-GSCPW3 has the earth-shielded transmission line of slot form.With reference to figure 5A and Fig. 5 B, slow wave CPW transmission line with the shielding of slot form suspension joint and the stereographic map with the earth-shielded slow wave CPW of slot form transmission line are described.At Fig. 5 A, maybe with periodically be positioned on the CPW framework or under slot form suspension joint Shielding Design have the slow wave CPW transmission line of slot form suspension joint shielding, and the shielding of slot form suspension joint is reversed and navigates to the CPW framework.In one embodiment, for all transmission lines of Table I, the CPW framework is formed on the 8th layer of metal level (M8), and the shielding of slot form is based upon the 7th (M7) or second (M2) metal level.The CPW of framework partly has signal/ground wire width of 10/um/10um, has 20um at interval between signal and the ground wire.The shielding of reaching the standard grade has static line length (SL) and the 2um fixed length interval (SS) of 2um, and the shielding of rolling off the production line has variable SL and variable SS.SL possibly be designed to be minimum length to reach the high-performance with the eddy current losses of minimizing.Minimum length at M7 and M2 is the 0.1um of 65nmCMOS technology.Following slot form suspension joint shielding is 0.1um with following separated by spaces design (1) at the SL of M7; And the SS that follows is 0.1um or 0.9um; And (2) are that 0.1um and the SS that follows are that 0.1um.um. is at Fig. 5 B at the SL of M2; For ground connection slow wave CPW transmission line, being similar to above-mentioned architecture design with slow wave CPW transmission line of suspension joint shielding, but the shielding of slot form is connected to ground connection.In one embodiment, above-mentioned all test structures have the length of same 500um and the width of 80um.

With reference to figure 6, separate embedded 200 method according to the embodiment explanation that discloses.Method 200 in step 202, forms test structure by step 202 beginning, comprises that the test structure of device being tested (DUT) is couple to the left signal pad by first transmission, and is couple to right line signal pad by second transmission line.

In step 204, form a plurality of virtual test frameworks, at least one virtual test framework is short virtual test framework.Form short virtual test framework to comprise ground shield above substrate, binary signal testing cushion, and the 3rd signal transmssion line at least is arranged at above the ground shield and between the binary signal testing cushion.The 3rd signal transmssion line is conductively coupled to ground shield, and total length is less than the total length of first transmission line, DUT and second transmission line.

According to the embodiment that discloses; The 3rd signal transmssion line possibly be formed at the ground shield top; The 3rd signal transmssion line possibly be formed into the total length of the pattern length of about first transmission line and second transmission line; And/or the 3rd signal transmssion line possibly form and comprise a plurality of mesoporous and a plurality of conductive layers, wherein the 3rd signal transmssion line is by at least one mesoporous ground shield that is conductively coupled to.

In step 206, measure test structure and comprise the transmission parameter of the virtual test framework of short virtual test framework.Method also comprises the intrinsic transmission parameter of the transmission parameter decision DUT of use test framework and a plurality of virtual test frameworks.According to the various embodiment of this disclosure, embedding technique combines the useful short virtual test framework of this disclosure to determine the intrinsic transmission parameter of DUT possibly to use open circuit-short circuit to separate interior embedding technique, open circuit-short circuit-pass in embedding technique or various other are separated in separating.Variously separate embedded technical description in patent application US 12/037333, above-mentioned listed references is all quoted the disclosure as this instructions.

With reference to figure 7A to Fig. 7 C and Fig. 8 A to Fig. 8 C, according to the embodiment of this disclosure the test structure 300,320,350 of various correspondences and 400,420,450 vertical view are described.With reference to figure 9A and Fig. 9 B, the skeleton view and the cut-open view of short virtual test framework is described according to the embodiment that discloses respectively.In an embodiment, these test structures possibly be used for the embedded method of separating of Fig. 6.

Fig. 7 A and Fig. 8 A explain the vertical view of test structure 300 and 400 respectively, and device 301 to be measured and 401 is embedded in test structure respectively.Test structure 300 and 400 possibly be similar to the test structure 400 of Fig. 2 A-Fig. 2 B, and possibly comprise the like with similar functions.In an embodiment, DUTs301 and 401 possibly comprise active or passive RF (RF) device.For instance, DUT possibly be RF IC (RFIC) device.

Proving installation 300 and 400 comprises test electric 302a and 302b, 304 and 304b, and 306a and 306b.Testing cushion 304a, 304b comprise the signal testing pad, and testing cushion 302a, 302b and 306a, 306b comprise the earthing test pad.In the present embodiment, testing cushion 302a, 304a, 306a and 302b, 304b and 306b are arranged in ground connection-signal-ground connection (GSG) configuration respectively, wherein earthing test pad 302a, 302b and 306a, 306b approach signal testing cushion 304a, 304b.In another embodiment, test structure 300 and 400 possibly implemented with other configurations of testing cushion, for example ground connection-signal (G-S), ground connection-signal-ground connection-signal-ground connection (GSGSG) and/or other test configurations that is fit to.

At Fig. 7 A, signal testing pad 304a and 304b are conductively coupled to transmission line 310 and 311 respectively.Transmission line 310 and 311 also is couple to DUT 30.Therefore, possibly set up being electrically connected between DUT 301 and the external device (ED).Transmission line 310,311 possibly also become signal transmssion line or signal pins.Earthing test pad 302a and 302b and earthing test pad 306a and 306b couple mutually via lead 308 and 312, and transmission line also possibly be called ground wire or grounding leg.Earthing test pad 302a, 302b and 306a, 306b and ground wire 308,312,314,315 provide the RP electrical ground of DUT 301.Testing cushion 302a-306a and 302b-306b, transmission line 310 and 311 and ground wire 308,312,314 and 315 comprise conductive material, for example aluminium, copper, Al-zn-mg-cu alloy, aluminium alloy, aldary, other metals, polysilicon and/or its combination.In an embodiment, signal testing pad and earthing test pad have approximate dimension and material.Can recognize that testing cushion 302a-306a and 302b-306b possibly be couple to external device (ED), tester for example is electrically connected so possibly set up between DUT 301 and the external port device.Transmission line 10 and 311 possibly comprise part 310a, 310b and 311a, 311b respectively, and part 310a, 311a be adjacent to signal testing electricity 304a, 304b, and part 310b, the adjacent DUT 301 of 311b.In an embodiment, part 310a and 311a possibility width is greater than part 310b and 311b.

Likewise, at Fig. 8 A, signal testing pad 304a and 304b are conductively coupled to transmission line 410 and 411 respectively.Transmission line 410 and 411 also is couple to DUT 30.Therefore, possibly set up being electrically connected between DUT 401 and the external device (ED).Transmission line 410,411 possibly also become signal transmssion line or signal pins.Earthing test pad 302a and 302b and earthing test pad 306a and 306b couple mutually via lead 308 and 312, and transmission line also possibly be called ground wire or grounding leg.Earthing test pad 302a, 302b and 306a, 306b and ground wire 308,312,414,415 provide the RP electrical ground of DUT 401.Testing cushion 302a-306a and 302b-306b, transmission line 410 and 411 and ground wire 308,312,414 and 415 comprise conductive material, for example aluminium, copper, Al-zn-mg-cu alloy, aluminium alloy, aldary, other metals, polysilicon and/or its combination.In an embodiment, signal testing pad and earthing test pad have approximate dimension and material.Can recognize that testing cushion 302a-306a and 302b-306b possibly be couple to external device (ED), tester for example is electrically connected so possibly set up between DUT 401 and the external port device.Transmission line 410 and 411 possibly comprise part 410a, 410b and 411a, 411b respectively, and part 410a, 411a be adjacent to signal testing electricity 304a, 304b, and part 410b, the adjacent DUT 401 of 411b.In an embodiment, part 410a and 411a possibility width is greater than part 410b and 411b.

Except how much of the DUT of the corresponding transmission line of the signal testing pad that is couple to DUT and length, test structure 300 and 400 is similar.In the present embodiment, the y direction is grown (Fig. 7 A) at the DUT 301 of x direction relatively, and relative x direction, grows (Fig. 8 A) at the DUT 401 of y direction.Therefore, according to embodiment, the length of transmission line 410,411 is greater than the length of transmission line 310,311.At Fig. 7 A and Fig. 8 A, transmission line 310 and 410 is between plane A and B, and DUT 301 and 401 is between plane B and C, and transmission line 411 and 411 is between plane C and F.In this two case, use traditional short circuit virtual test framework to separate embedded mistake in x direction or y direction.

DUT 301 and 401 has the intrinsic transmission parameter of actual physics/electric characteristics of expression DUT.When DUT 301 or 401 measures these intrinsic transmission parameters; Be couple to the assembly of DUT 301 or 401; For example signal testing pad (for example 302a-306a and 302b-306b) and transmission line (for example 310,311 and 410,411) contribution comprise dead resistance, stray capacitance and stray inductance parasitic animal and plant to measurement result, so influence the degree of accuracy of the measurement of DUT negatively.Therefore, various " separating embedded " method has been used for the intrinsic transmission parameter by DUT measurement result acquisition DUT.Yet when test frequency increases, the parasitic animal and plant contribution that is couple to the assembly of DUT becomes big, possibly make solution for the current embedded method out of true.For instance, solution for the current embedded method in vogue utilizes " open circuit-short circuit-pass " mode, is separating an embedded aspect, and DUT is removed by test structure, and extra electrical short circuit connection is positioned between the plane B and plane C of test structure.Because electrical short connects and possibly comprise metal and possibly comprise resistance and inductance, should be unable to be separated embedded.Yet " open circuit-short circuit-pass " separated embedded method and do not will consider this and separate embedded electrical short circuit connection from measurement result effectively.Therefore, using " open circuit-short circuit-pass " to separate embedded method, to obtain the intrinsic transmission parameter of DUT be more coarse.This phenomenon is called " short circuit is excessively separated embedded ", means separating the resistance value and the inductance value that remove during embedded to be higher than the correct value that be removed." short circuit is excessively separated embedded " problem becomes remarkable especially when high frequency, for instance, and when frequency equals greater than 50GHz.When electrical short circuit connects when becoming longer ", separate embedded short circuit " problem also becomes worse.

In order to overcome the restriction of type solution embedded method, present embodiment uses and comprises that the multiple testing framework of favourable short circuit virtual test framework obtains the precise results of the intrinsic transmission parameter of DUT 301,401.These multiple testing frameworks possibly comprise following or above-mentioned test structure 300,320,350,400,420,450 and 500.

The corresponding open circuit virtual test framework 320 of Fig. 7 B explanation, and the corresponding open circuit virtual test framework 420 of Fig. 8 B explanation with test structure 400 of DUT 401 with test structure 300 of DUT 301.Open circuit virtual test framework 320 and 420 comprises and earthing test pad, signal testing pad and ground wire like the similar framework of above-mentioned associated diagram 7A and Fig. 8 A and similar functions and so on.Yet DUT 301 and 401 is removed to form the gap between 310,311 and 410,411 the transmission line by open circuit virtual test framework 320 and 420 respectively, and whereby, formation comprises the open circuit signaling transmission line of line 310 and 311.

Fig. 7 C explains the effective short virtual test framework 350 of corresponding test structure 300 and 400 and 450 vertical view with Fig. 8 C according to each aspect of this disclosure.Fig. 9 A and Fig. 9 B explain the skeleton view and the cut-open view of the short circuit virtual test framework 550 of corresponding test structure 300 or 400.

Short circuit virtual test framework 350,405,550 is included in the ground shield 351,451,551 of substrate top.The short circuit virtual test framework 350 of Fig. 7 C also comprises binary signal testing cushion 304a at least, 304b and the signal transmssion line 354 between ground shield 350 and binary signal testing cushion 304a, 304b.The short circuit virtual test framework 450 of Fig. 8 c also comprises binary signal testing cushion 304a at least, 304b and above the ground shield 451 and the signal transmssion line 454 between the binary signal testing cushion 304a, 304b, wherein signal transmssion line is conductively coupled to ground shield 451.The short circuit virtual test framework 550 of Fig. 9 A-Fig. 9 B also comprises binary signal testing cushion 304a at least, 304b and above the ground shield 551 and the signal transmssion line 554 between the binary signal testing cushion 304a, 304b, wherein signal transmssion line 554 is conductively coupled to ground shield 551.

According to various aspects of the present invention, ground shield 351,451,551 possibly comprise metal for example aluminium or copper and have various width and thickness.According to an embodiment, ground shield 351,451,551 is positioned under the entire length of signal transmssion line and ground wire.In other words, according to the various aspects of this disclosure, signal transmssion line 354,454,554 possibly be arranged at ground shield 351,451,551 tops respectively.Advantageously, in one embodiment, use such substrate-shield technology design and make short circuit virtual test framework 350,450,550, so reduce the potential electromagnetic field radiation that leaks into the semiconductor substrate (not shown).By the substrate shield technology, short circuit virtual test framework 350,450,550 is manufactured on the substrate, and comprises the bottom metal plane that is grounding to the shielding silicon substrate.Implement to be characterised in that test structure 350,450,550 possibly think separate network and need not be couple to other networks.In addition,, there is not the substrate network to be increased to separate embedded equivalent electrical circuit, simultaneously simple equivalent circuit and separate embedded method because by the ground shield shielding board.

In addition; Shown in Fig. 7 A, Fig. 7 C and Fig. 8 A, Fig. 8 C and Fig. 9 A, Fig. 9 B; According to the embodiment that discloses, the total length of each of the signal transmssion line 354,454,554 of short virtual test framework 350,450,550 is less than the total length of the device to be measured (DUT) of respective signal transmission line and test structure.For instance, in the length of the plane A of short circuit virtual test framework 350 and the signal transmssion line 354 between the F less than transmission line 310,311 and the plane A of test structure 300 (Fig. 7 A, Fig. 7 C) and the total length of the DUT 301 between the F.Likewise, the length of the plane A of short circuit virtual test framework and the signal transmssion line 454 between the F is less than transmission line 410,411 and the plane A of test structure 400 (Fig. 8 A, Fig. 8 C) and the total length of the DUT 401 between the F.

In addition; Shown in Fig. 7 A, Fig. 7 C and Fig. 8 A, Fig. 8 C and Fig. 9 A, Fig. 9 B; According to the embodiment that discloses, the total length of the signal transmssion line 354,454,554 of short circuit virtual test framework 350,450,550 approximately is first transmission line and the pattern length of second transmission line that couples the device to be measured (DUT) of test structure.For instance, the length of the plane A of short circuit virtual test framework 350 and plane F transmission line 354 approximately is the plane A of test structure (Fig. 7 A, Fig. 7 C) and the pattern length of transmission line 310 between the B and the transmission line 311 between plane C and the F.In an embodiment, transmission line 354 possibly comprise part 310a, 310b, 311a and the 311b of above-mentioned associated diagram 7A.Likewise, the length of the plane A of short circuit virtual test framework 450 and the signal between F transmission length 454 approximately is the plane A of test structure (Fig. 8 A, Fig. 8 C) and the pattern length of the transmission line 411 between the transmission line 410 between the B and plane C and the F (also promptly not having DUT401).In an embodiment, transmission line possibly comprise part 410a, 410b, 411a and the 411b of above-mentioned associated diagram 8A.

It is said to be similar to above-mentioned previous test structure, and each all comprises testing cushion 302a and 302b, 304a and 304 short circuit virtual test framework 350,450,550, and 306a and 306b.Testing cushion 304a, 304b comprise the signal testing pad, and testing cushion 302a, 302b and 306a, 306b comprise the earthing test pad.In the present embodiment, testing cushion 302a, 304a, 306a and 302b, 304b and 306b are arranged in ground connection-signal-ground connection (GSG) configuration respectively, wherein earthing test pad 302a, 302b and 306a, 306b approach signal testing cushion 304a, 304b.In another embodiment, test structure 350,450,550 possibly implemented with other configurations of testing cushion, for example ground connection-signal (GS), ground connection-signal-ground connection-signal-ground connection (GSGSG), and/or any suitable test configuration.

At Fig. 7 C, signal testing pad 304a and 304b are via transmission limit 354 mutual electric property couplings. Earthing test pad 302a and 302b and earthing test pad 306a and 306b couple mutually via the lead 352 and 356 that also is transmission line respectively, and possibly be called ground wire. Earthing test pad 302a, 302b and 306a, 306b and ground wire 352,356 provide pad property ground connection RP.Testing cushion 302a-306a and 302b-306b, transmission line 354 and ground wire 352,356 possibly all comprise conductive material, for example aluminium, copper, aluminium copper, aluminium alloy, aldary, other metals, polysilicon and/or its combination.In the present embodiment, signal testing pad and earthing test pad have similar dimension and material.Can recognize that testing cushion 302a-306a and 302b-306b possibly be couple to external device (ED), tester for example is so possibly determine the measurement of short circuit virtual test framework 350.

Likewise, at Fig. 8 C, signal testing pad 304a and 304b are via transmission limit 454 mutual electric property couplings. Earthing test pad 302a and 302b and earthing test pad 306a and 306b couple mutually via the lead 452 and 456 that also is transmission line respectively, and can be described as ground wire. Earthing test pad 302a, 302b and 306a, 306b and ground wire 452,456 provide pad property ground connection RP.Testing cushion 302a-306a and 302b-306b, transmission line 454 and ground wire 452,456 possibly all comprise conductive material, for example aluminium, copper, aluminium copper, aluminium alloy, aldary, other metals, polysilicon and/or its combination.In the present embodiment, signal testing pad and earthing test pad have similar dimension and material.Can recognize that testing cushion 302a-306a and 302b-306b possibly be couple to external device (ED), tester for example is so possibly determine the measurement of short circuit virtual test framework 450.

Likewise, at Fig. 9 A-Fig. 9 B, signal testing pad 304a and 304b are via transmission limit 554 mutual electric property couplings. Earthing test pad 302a and 302b and earthing test pad 306a and 306b couple mutually via the lead (for example line 452) and 456 that also is transmission line respectively, and possibly be called ground wire or grounding leg. Earthing test pad 302a, 302b and 306a, 306b and ground wire (for example line) 552 provides electrical ground connection RP.Testing cushion 302a-306a and 302b-306b, transmission line 554 and ground wire (for example line 552) possibly all comprise conductive material, for example aluminium, copper, aluminium copper, aluminium alloy, aldary, other metals, polysilicon and/or its combination.In the present embodiment, signal testing pad and earthing test pad have similar dimension and material.Can recognize that testing cushion 302a-306a and 302b-306b possibly be couple to external device (ED), tester for example is so possibly determine the measurement of short circuit virtual test framework 550.

Illustrate further at Fig. 9 A-Fig. 9 B; The signal transmssion line 554 of short circuit virtual test framework comprises a plurality of mesoporous 556 and 558; And a plurality of conductive layers 554 above screen layer 551 (comprising conductive layer 554a, 554b, 554c) and 557, all elements are all above substrate 500.Conductive layer possibly be (inter-level) metal layer between the well known stratum that has a plurality of semiconductor devices.In one embodiment, conductive layer and the mesoporous conductive material that comprises, metal for example, for instance, aluminium, copper, aluminium copper, tungsten or its combination.In one embodiment, conductive layer 554b is conductively coupled to ground shield 551 by at least one mesoporous 558, whereby via conductive layer 557 and mesoporous 556 electric property coupling conductive layer 554a, 554c to ground shield 551. Conductive layer 554 and 557 has various width and thickness.Though three metal levels 557 are shown in Fig. 9 B, signal transmssion line 554 is not limited to such number, and maybe more or less metal level 557 (and correspondence is mesoporous).In other words, the conductive layer of various stratum possibly comprise signal transmssion line 554.

According to the embodiment that discloses, ground wire (for example 552) and earthing test pad 302a, 302b and 306a, 306b comprise a plurality of metal levels that couple by mesoporous.A last metal level that possibly be included on the intermediate metal layer of a plurality of metal levels.According to another aspect that discloses, the substrate layer of ground wire and/or earthing test pad possibly be conductively coupled to ground shield 551.

In one embodiment, substrate 500 is semiconductor substrates, and possibly comprise silicon, maybe possibly comprise SiGe, gallium arsenide or other suitable semiconductor materials.Substrate possibly also comprise active region and other characteristics of mixing, for example buried regions and/or epitaxial loayer (epitaxy layer).In addition, substrate possibly be to cover semiconductor in the insulation, for example silicon-on-insulator (SOI).In other embodiments, semiconductor substrate possibly comprise epitaxial loayer, gradient (gradient) semiconductor layer that mixes and/or possibly comprise also that semiconductor layer covers other semiconductor layers of different shape, for example covers silicon on the germanium-silicon layer.In other embodiments, composite semiconductor substrate possibly comprise that a multilayer silicon framework or a silicon substrate possibly comprise the MULTILAYER COMPOSITE semiconductor framework.Active region possibly configuration become NMOS device (for example nFET) or PMOS device (for example pFET).Semiconductor substrate possibly be included in and form during the previous processing step or the below layer, device, knot and other characteristic (not shown)s that form of processing step afterwards.

Though show, in example, dielectric layer, for example oxide layer possibly be deposited on the transmission line conductive layer, mesoporous between and/or between substrate and the ground shield 551.

In an embodiment, test structure 300,320,350,400,4720,450 and/or 550 is formed at same semiconductor wafer.Also possibly use same technology and technology (65nmRF-CMOS technology for instance) manufacturing test framework.Can recognize that DUT possibly form along with the formation of test structure.In another embodiment, possibly use different process manufacturing test framework and/or be formed at different chips.

Advantageously; The x of traditional short circuit virtual test framework or the unnecessary metal wire of y direction are removed; And the transmission line that keeps is combined to reduce the length of transmission line of signal and ground wire, and it is embedded to be reduced in excessively separating of x and/or y direction in fact to form the short circuit virtual test framework with ground shield improvement on substrate whereby.

With reference to Figure 10, according to the embodiment that discloses, equivalent electrical circuit 600 shows that the ghost effect of test structure (for example test structure 300,400) is embedded to be separated.Y ₁, Y ₂With Y ₃Represent between the pad and grounded shield of first port 602 (for example input port) respectively, between the pad and grounded shield of second port 604 (for example output port), and the coupling capacitance C between first port and second port ₁, C ₂With C ₃Y ₄, Y ₅With Y ₆Represent between left signal pin (for example signal transmssion line 310,410) and the grounded shield respectively, between the pad and grounded shield of right signal pin (for example signal transmssion line 311,411), and the coupling capacitance C between left signal pin and the right signal pin ₄, C ₅With C ₆Z ₁With Z ₂Expression is from the left signal pin and the right signal pin series impedance of first port 602 and second port 604, and Z ₃Expression is connected to the series impedance of the grounding leg of ground connection.

According to embodiment, electric capacity (C _n) can take from the area ratio (A of open circuit virtual measurement and pad _x/ A _y+ A _z)) and connect, and resistance (R _n) and inductance (L _n) possibly take from the matrix manipulation of opening a way, the example equation shown in utilization is following with the short circuit virtual measurement.[Y _O] and [Y _S] Y parameter of expression open circuit virtual test framework and short circuit virtual test framework respectively.

C ₁+C ₄＝(1/ω)imag(Y ₁₁₀+Y ₁₂₀)

C ₂+C ₅＝(1/ω)imag(Y ₂₂₀+Y ₁₂₀)

C ₁＝(C ₁+C ₄)*A ₁/(A ₁+A ₄)

C ₄＝(C ₁+C ₄)*A ₄/(A ₁+A ₄)

C ₂＝(C ₂+C ₅)*A ₂/(A ₂+A ₅)

C ₄＝(C ₂+C ₅)*A ₅/(A ₂+A ₅)

C ₃＝C ₆＝0.5*(-1/ω)imag(Y ₁₂₀)

$Z_{\mathrm{SO}}=Y_{\mathrm{SO}}^{-1}={(Y_S-Y_O)}^{-1}$

R ₁＝real(Z _11SO-Z _12SO)

L ₁＝(1/ω)imag(Z _11SO-Z _12SO)

R ₂＝real(Z _22SO-Z _12SO)

L ₂＝(1/ω)image(Z _22SO-Z _12SO)

R ₃＝real(Z _12SO)

L ₃＝(1/ω)image(Z _12SO)

With reference to Figure 11, according to the embodiment that discloses, the block scheme description obtains the system 700 of the inherent characteristic of DUT.DUT is positioned at the test structure 705 of the substrate that is manufactured in wafer 703.Test structure 704 (for example short circuit virtual test equipment) also is positioned on the wafer 703.Probe 706 and 707 is used for obtaining S parameter data by framework 704 and framework 705.Probe operation becomes to be couple to the automatic network analyzer 709 of correction.Software control network analyser 709 by workstation 711.Software possibly downloaded by the Storage Media (for example hard disk) of the server 715 of workstation 711.In other embodiments, software possibly be positioned at personal computer system's hard disk or downloaded by removable media (for example CD-Rom).Workstation 711 executive softwares remove control analysis appearance 709, carry out one or method more how described here whereby.

Figure 12 explains the block scheme of workstation 711 according to the embodiment that discloses.Workstation 711 comprises processor 802, storer 804 and analyser interface 806.But processor 802 access memories 804.In addition, analyser interface 806 is connected to processor 802.

Processor 802 can be that microprocessor, controller or other can be carried out the processor of a series of instructions.Storer is a computer fetch medium, for example random-access memory (ram), nonvolatile memory, for example flash memory or hard disk and analog thereof.Storer 804 stores the instruction that comprises one group of Operation Processor 802 to implement disclosed here one or multi-method more.For instance, program 805 possible operation processors, 802 control analysis appearance interfaces 806 and possibly be used to store data comprise test result.By analyser interface 806, the inherent characteristic of processor 802 control analysis appearance 709 (Figure 11) decision device to be measured is as described.Inherent characteristic can be stored in storer 804.Cognizable system to other forms can be used for other embodiment to carry out one or method more how described here.

This disclosure provides the various useful embedded method and apparatus of separating.The wide form of this disclosure comprises short circuit virtual test framework.Short circuit virtual test framework comprises the ground shield of substrate top, binary signal testing cushion and above the ground shield and the signal transmssion line between the binary signal testing cushion at least, and wherein signal transmssion line is conductively coupled to ground shield.In an embodiment, the length of signal transmssion line is less than the total length of the device to be measured of the signal transmssion line of correspondence and proving installation.

Another form of this disclosure comprises separates embedded device; Separate embedded device and comprise test structure; Test structure comprises by first transmission line and couples the left signal pad and be couple to the device to be measured (DUT) of right signal pad and short circuit virtual test framework by second transmission line.Short circuit virtual test framework is included in the ground shield of substrate top, binary signal testing cushion and the 3rd signal transmssion line between ground shield and binary signal testing cushion at least.The 3rd signal transmssion line is conductively coupled to ground shield and the total length total length less than first transmission line, DUT and second transmission line.

Another generalized form of this disclosure comprises the embedded method of separating; Separate embedded method and comprise the formation test structure; Test structure comprises by first transmission line and couples the left signal pad and be couple to the device to be measured (DUT) of right signal pad by second transmission line, and forms a plurality of virtual test frameworks.At least one virtual test framework is a short circuit virtual test framework; Short circuit virtual test framework is included in the ground shield of substrate top, binary signal testing cushion and the 3rd signal transmssion line between ground shield and binary signal testing cushion at least, and wherein the 3rd signal transmssion line is conductively coupled to ground shield and the total length total length less than first transmission line, DUT and second transmission line.Method also comprises the transmission parameter of measuring test structure and comprising the virtual test framework of short circuit virtual test framework, and the intrinsic transmission parameter of use test framework and the transmission parameter decision DUT of a plurality of virtual test frameworks that comprise short circuit virtual test framework.

Advantageously; The x of traditional short circuit virtual test framework or the unnecessary metal wire of y direction are removed; And the transmission line that keeps is combined to reduce the length of transmission line of signal and ground wire, and it is embedded to be reduced in excessively separating of x and/or y direction in fact to form the short circuit virtual test framework with ground shield improvement on substrate whereby.This disclosure also provides the accurate device characteristic of enhancing and does not need extra virtual test framework.Therefore, the mistake that this disclosure solves x and y direction is simultaneously separated embedded phenomenon, complicated substrate effect and is separated embedded uncertainty and need not increase the complexity of separating embedded program at dingus, enables more accurate RF pattern whereby again during high frequency.

Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Any those of ordinary skills; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the scope that claim defined.

Claims (12)

1. short circuit virtual test framework comprises:

One ground shield is positioned at substrate top;

At least binary signal testing cushion;

One signal transmssion line; Above this ground shield and between the binary signal testing cushion; Wherein this signal transmssion line is conductively coupled to this ground shield, and wherein the total length of this signal transmssion line less than a total length of a device to be measured of a corresponding signal transmssion line and a test structure.

2. short circuit virtual test framework as claimed in claim 1, wherein this overall signal transmission line is positioned at this and connects and cover screen layer; Wherein a total length of this signal transmssion line equals to couple one first transmission line and a pattern length of one second transmission line of a device to be measured of a test structure.

3. short circuit virtual test framework as claimed in claim 1, wherein this transmission line comprises a plurality of mesoporous between the conductive layer of a plurality of vertical stackings; Wherein this signal transmssion line is via at least one mesoporous ground shield that is conductively coupled to.

4. short circuit virtual test framework as claimed in claim 1; Also comprise: parallel this signal transmssion line of a plurality of ground wires; Each ground wire is arranged between the two earthing test pads and is conductively coupled to this ground shield, and wherein this signal testing pad and this earthing test pad are ground connection-signal-ground connection configurations.

5. separate embedded device for one kind, comprising:

One test structure, this test structure comprise that a device to be measured is couple to a left signal pad and is couple to a right signal pad via one second transmission line via one first transmission line;

One short-circuit test framework comprises:

One ground shield is positioned on the substrate;

At least binary signal testing cushion; And

One the 3rd signal transmssion line; On the ground shield and between this binary signal testing cushion; Wherein the 3rd signal transmssion line is conductively coupled to this ground shield, and wherein the total length of the 3rd transmission line less than the total length of this first transmission line, this device to be measured and this second transmission line.

6. the embedded device of separating as claimed in claim 5 wherein should be positioned at this ground shield top by integral body the 3rd signal transmssion line; Wherein a total length of the 3rd signal transmssion line is a pattern length of this first transmission line and this second transmission line.

7. the embedded device of separating as claimed in claim 5, wherein the 3rd signal transmssion line comprises a plurality of mesoporous and a plurality of conductive layers; Wherein the 3rd signal transmssion line is via at least one mesoporous this grounded shield that is conductively coupled to.

8. the embedded device of separating as claimed in claim 5; Wherein this test structure and this short-circuit test framework comprise a plurality of ground wires parallel this first, this second and the 3rd signal transmssion line; Each ground wire is arranged between the two earthing test pads, and wherein this signal testing pad and this earthing test pad are ground connection-signal-ground connection configurations in this test structure and this short circuit virtual test framework.

9. separate embedded method for one kind, comprising:

Form a test structure, this test structure comprises that a device to be measured is couple to a left signal pad and is couple to a right signal pad by one second transmission line by one first transmission line, and wherein this device to be measured is DUT;

Form a plurality of virtual test frameworks; At least one virtual test framework is a short circuit virtual test framework; This short circuit virtual test framework comprise the ground shield on the substrate, at least the binary signal testing cushion and on the ground shield and this binary signal testing cushion between one the 3rd signal transmssion line; Wherein the 3rd signal transmssion line is conductively coupled to this ground shield, and wherein the total length of the 3rd transmission line less than the total length of this first transmission line, this device to be measured and this second transmission line;

Measure the transmission parameter of this test structure and this virtual test framework; And

Use the intrinsic transmission parameter of this DUT of transmission parameter decision of this test structure and these a plurality of virtual test frameworks.

10. as claimed in claim 9ly separate embedded method, wherein the 3rd transmission line is formed at this ground shield top; Wherein a total length of the 3rd transmission line is a pattern length of this first transmission line and this second transmission line.

11. as claimed in claim 9ly separate embedded method, wherein the 3rd signal transmssion line comprises a plurality of mesoporous and a plurality of conductive layers, and wherein the 3rd signal transmssion line by at least one mesoporous this ground shield that is conductively coupled to.

12. as claimed in claim 9ly separate embedded method, wherein use an open circuit-short circuit separate in embedding technique or an open circuit-short circuit-pass through in separating embedding technique determine this intrinsic transmission parameter of this DUT.

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