CN102656494A - Photonic integrated circuit having a waveguide-grating coupler - Google Patents

Photonic integrated circuit having a waveguide-grating coupler Download PDF

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Publication number
CN102656494A
CN102656494A CN2010800571690A CN201080057169A CN102656494A CN 102656494 A CN102656494 A CN 102656494A CN 2010800571690 A CN2010800571690 A CN 2010800571690A CN 201080057169 A CN201080057169 A CN 201080057169A CN 102656494 A CN102656494 A CN 102656494A
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waveguide
optical
grating
core
substrate
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CN102656494B (en
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尼古拉斯·杜普伊斯
克里斯托弗·R·多尔
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Usao Investment Co.,Ltd.
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Alcatel Optical Networks Israel Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00663—Production of light guides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/30—Optical coupling means for use between fibre and thin-film device
    • G02B6/305—Optical coupling means for use between fibre and thin-film device and having an integrated mode-size expanding section, e.g. tapered waveguide
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • G11B5/314—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure where the layers are extra layers normally not provided in the transducing structure, e.g. optical layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
    • G02B6/29332—Wavelength selective couplers, i.e. based on evanescent coupling between light guides, e.g. fused fibre couplers with transverse coupling between fibres having different propagation constant wavelength dependency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G11B2005/0005—Arrangements, methods or circuits
    • G11B2005/0021—Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal

Abstract

A photonic integrated circuit (PIC) having a waveguide-grating coupler with two evanescently coupled waveguides. The first waveguide is fabricated using materials suitable for manufacturing active optical elements in the PIC. The second waveguide is fabricated using materials capable of providing a relatively high index-of-refraction contrast for the constituent waveguide grating. The waveguide-grating coupler is compatible with the III-V semiconductor technology while being relatively easy to fabricate on an industrial scale.

Description

Photonic integrated circuits with Waveguide grating coupler
Technical field
The present invention relates generally to optical communication device, and more particularly (but not exclusively) relates to the optical device that is used for coupling light to photonic integrated circuits and light being coupled out from photonic integrated circuits.
Background technology
This part introduction can help to understand better aspect of the present invention.Therefore, should under this background, read the statement of this part, and should it be interpreted as admitting non-existent content in the interior perhaps prior art that exists in the prior art.
Photonic integrated circuits (PIC) is used for the various application in long distance communication, instrument and meter and signal Processing field.PIC uses assembly, for example optical switch, coupling mechanism, router, separation vessel, multiplexer/demultplexer, modulator, amplifier, wavelength shifter, light/electricity (O/E) and electricity/light (E/O) signal converter etc. on the optical waveguide enforcement and/or the various chips that interconnect usually.Waveguide among the PIC is generally solid light guide pipe on the chip, and it is owing to the core of waveguide and the contrast of refractive index between the shell and direct light.
In order to carry out proper handling, PIC needs efficiently on externally optical fiber and the chip coupling light between one or more in the waveguide usually.The exemplary grating coupling mechanism that can be used for this purpose is disclosed in (for example) the 7th, 065, No. 272 United States Patent (USP)s, and the full content of said patent is incorporated herein by reference.Yet; The problem that some grating couplers exist is; It only just plays a role when use provides core to implement with the material of last outer shell and lower casing layer high relatively contrast of refractive index between the two well; Yet some active optical component of PIC requires to use the material of the contrast of refractive index that only can provide relatively low.
Summary of the invention
Advantageously, some embodiment of the Waveguide grating coupler that discloses among this paper do not have the low coupling efficiency of prior art Waveguide grating coupler, and are convenient to be integrated in the photonic integrated circuits (PIC) that has based on the semi-conductive active optical component of III-V.In particular, solve prior art problems through the Waveguide grating coupler that the waveguide with two fadout couplings is provided.First waveguide is to use the made that is suitable for making active optical component, and second waveguide is to use the made of the contrast of refractive index that can provide high relatively for the waveguide optical grating of forming.
According to an embodiment, a kind of device is provided, said device has: (i) first optical waveguide, it is supported on the surface of substrate; (ii) second optical waveguide, it is supported on the said surface; (iii) optical coupler, it is supported on the said surface and with said first and second waveguide of optical mode coupling; And (iv) waveguide optical grating, it is supported on the said surface and is suitable for forming or be applied at one or more waveguide modes of second waveguide and by waveguide optical grating between the light beam of waveguide optical grating and transmits optical power.Said second waveguide has skew-transition zone, and to said zone, the core of second waveguide has offset distance, and said offset distance gradually changes to different second distances from first distance of corresponding coupling mechanism.
In various extra embodiment, said device can have one or more in the following characteristic: (a) core of second waveguide and in the shell at least one comprise the core that is different from first waveguide and the material of the material in the shell; (b) said substrate forms the shell of first waveguide.
According to another embodiment, a kind of photonic integrated circuits (PIC) is provided, said circuit has: (i) substrate; (ii) optical signalling is handled (OSP) circuit, and it is supported on the said substrate and has at least one active optical component; (iii) first optical waveguide, it is coupled to active optical component with optical mode; (iv) second optical waveguide, it has the waveguide optical grating that transmits optical power between the light beam that is suitable for forming or be applied at one or more waveguide modes of second optical waveguide and by waveguide optical grating waveguide optical grating; And (v) optical coupler, it is only through said first and second waveguide of evanescent field coupling.Said second optical waveguide has skew-transition zone, and in said zone, the core of second optical waveguide has the offset distance with respect to substrate, and said distance changes to different second distances from first distance gradually.
According to another embodiment, a kind of method of making optical device is provided, said method has following steps: the substrate that has first optical waveguide on it (A) is provided, and said first optical waveguide has the outer shell that has wedge-like portion; (B) on the expose portion of the shell of the said wedge-like portion and first waveguide, form the core of second optical waveguide; Reach and (C) in the core of second optical waveguide, form array of cavities to define waveguide optical grating therein.
In various extra embodiment, said method can have the additional step that on substrate, forms the OSP circuit, and wherein have one or more in the following characteristic: (a) first optical waveguide is coupled to the OSP circuit with optical mode; (b) the OSP circuit comprises at least one active optical component; (c) said first and second optical waveguide, waveguide optical grating and OSP circuit are the part that is formed on the photonic integrated circuits (PIC) on the said substrate; (d) core of first optical waveguide comprises III-V family alloys ternary, quaternary or five yuan; (e) shell of first waveguide comprises binary III-V compounds of group; (f) core of second waveguide comprises silicon: (g) said wedge-like portion comprises silicon dioxide; And (h) for the operative wavelength of appointment, the offset distance between the interface of the shell of waveguide optical grating and first optical waveguide and the shell of second waveguide is through selecting to cause constructive interference between the following light: (i) by waveguide optical grating towards the light of interface diffraction and the said wavelength that then returns by boundary reflection reach (ii) with the direction of catoptrical direction of propagation conllinear on by the light of the said wavelength of waveguide optical grating diffraction.
Description of drawings
From following detailed description and accompanying drawing, by instance, it is more obvious that the others of various embodiment of the present invention, characteristic and benefit will become, in the accompanying drawings:
Fig. 1 shows the vertical view of photonic integrated circuits according to an embodiment of the invention (PIC);
Fig. 2 A shows the cross-sectional side view of the optical coupler among the PIC that can be used for Fig. 1 according to an embodiment of the invention to C;
Fig. 3 A is to the vertical view of B displaying according to two representative patterns in the waveguide optical grating of the optical coupler that can be used for showing among Fig. 2 of some embodiments of the present invention; And
Fig. 4 shows the process flow diagram of the manufacturing approach of the optical coupler that can be used for shop drawings 2 according to an embodiment of the invention.
Embodiment
Fig. 1 shows the vertical view of photonic integrated circuits according to an embodiment of the invention (PIC) 100.PIC 100 is the monolithic device on plane in fact, and its lateral dimensions (for example, the size in the plane of Fig. 1) is significantly greater than lateral dimension (for example, along with the height or the thickness of the axle of the plane of Fig. 1).Be shown as to PIC 100 being illustrated property and have two optical coupler 110a-b and optical signalling is handled (OSP) part or circuit 120, but have the optical coupler of different numbers and/or the PIC of OSP part also is possible.In typical embodiment, coupling mechanism 110a-b and OSP part 120 are implemented on common substrate 102 and by its support.
In the representative configuration of PIC 100, the incident beam that will not guide with respect to the first directed external fiber of the plane approximation quadrature ground of Fig. 1 (clearly not illustrating) is applied to coupling mechanism 110a.As used herein, term " guiding " refers to not the light beam by light guide structure (for example waveguide or optical fiber on the chip) sidewise restraint.Owing to the tip of external fiber and the finite space between the coupling mechanism 110a at interval, the light beam of irradiation coupling mechanism is lead beam not.The light of the light beam that coupling mechanism 110a coupling is received through waveguide taperer 112a, enters into slab guide 118a.Waveguide 118a then will be delivered to OSP part 120 through the light of coupling.OSP part 120 is used and is positioned at one of them or an above optical element is handled said light, and gained light is applied among the slab guide 118b, and said slab guide 118b then guides said light, through waveguide taperer 112b to coupling mechanism 110b.Coupling mechanism 110b forms the not lead beam of outgoing, and said light beam coupling is not to second external fiber directed with respect to the plane approximation quadrature ground of Fig. 1 (clearly illustrating).
From a structural point, coupling mechanism 110 comprises evanescent coupler 130, skew-transition zone 126 and waveguide optical grating 140.Evanescent coupler 130 is coupling light between waveguide taperer 112 and second waveguide (in Fig. 1, clearly not illustrating) (it is the inner member of coupling mechanism 110).Skew-transition zone 126 is used for reducing gradually the fadout coupling at the places in the edge of evanescent coupler 130.Waveguide optical grating 140 is used for not transmitting optical power between the lead beam at one or more waveguide modes of said second waveguide and by what waveguide optical grating formed or be applied to said waveguide optical grating.More describe the exemplary embodiment of evanescent coupler 130, skew-transition zone 126 and waveguide optical grating 140 hereinafter in detail referring to Fig. 2 and 3.
In exemplary embodiment, OSP part 120 comprises one or more active optics assemblies, for example semi-conductor optical amplifier, laser diode and/or optical modulator.So known in the technology, these one or more active optics assemblies are to use III-V semiconductor material (for example, binary III-V compound and/or ternary, quaternary or five yuan of III-V alloys) to implement.Though III-V semiconducting compound and alloy are the enforcement of active optics assembly well-known advantage is provided, they only can provide the contrast of refractive index of the appropriateness between core material and the sheathing material.For instance, in the indium phosphide platform technology, the refractive index of core material and sheathing material is respectively about 3.5 and 3.17, and this produces about 0.09 contrast of refractive index.If the prior art optical coupler is designed for enforcement optical coupler 110a-b, then disadvantageous is that coupling efficiency will be low relatively or manufacture process exists too complicated and/or expensive or said two shortcomings simultaneously.By contrast, optical coupler 110 advantageously provides high relatively coupling efficiency (for example, greater than about 35%), is easy to relatively with the industrial scale manufacturing simultaneously.
Fig. 2 A shows the cross-sectional side view that can be used as the optical coupler 200 of optical coupler 110 according to an embodiment of the invention to C.More particularly, Fig. 2 A shows the complete cross section side view of coupling mechanism 200.Fig. 2 B displaying is used for the amplification cross-sectional side view of the structure 230 of fadout ground coupling light between the waveguide 210 of coupling mechanism 200 and waveguide 220.Fig. 2 C is illustrated in the amplification cross-sectional side view of the waveguide optical grating 240 that uses in the coupling mechanism 200.In the following description, with reference to the operation of light being explained coupling mechanism 200 from the process illustrative ground that corresponding PIC is coupled.Describe according to this, the those of ordinary skill in affiliated field will easily be understood the operation of coupling mechanism 200 in the process that will couple light among the PIC.
Optical coupler 200 has through two waveguides 210 of the mutual fadouts coupling of structure 230 and 220 (seeing Fig. 2 A and 2B).Waveguide 210 is coupled to the OSP part of corresponding PIC and through being configured to receive the light of OSP part from corresponding PIC (in for example, like Fig. 1 sign) through optical mode.From a structural point, waveguide 210 comprises: (i) core layer 204 of high-index material and (ii) adjoin two outer shells 202 and 206 of the low-index material of said core layer.In one embodiment, outer shell 202 is a substrate layer, and said substrate layer is also as the substrate of the OSP of PIC part and be similar to the substrate 102 (Fig. 1) of PIC 100.The exemplary materials that is used for substrate 202 and outer shell 206 is indium phosphide, gallium nitride, sapphire, indium arsenide and gallium arsenide.Notice that substrate 202 and outer shell 206 can be by identical or different made.The exemplary materials that is used for core layer 204 is ternary InGaAsP, quaternary arsenic phosphide indium gallium and quaternary InGaAsP aluminium.
Waveguide 220 has: (i) core layer 214 of high-index material and (ii) two outer shells 212 and 216 of low-index material.The exemplary materials that is used for core layer 214 is amorphous silicon and polysilicon.The exemplary materials that is used for outer shell 212/216 is silicon dioxide and silicon oxynitride.Notice that be similar to substrate 202 and outer shell 206, outer shell 212/216 can be by identical or different made.
Waveguide 220 has skew-transition zone 226, and in said zone, the vertical interval between the core layer 204 of waveguide 210 and the core layer 214 of waveguide 220 is not constant.Among this paper, term " vertically " refers to the Z coordinate axis, itself and master (XY) plane of the PIC that is defined by the principal plane of substrate (for example, substrate 102 (Fig. 1) or substrate 202 (Fig. 2)).The first 214 of core layer 214 1Directly be adjacent to outer shell 206 and common and XY plane parallel (seeing Fig. 2 B).The second portion 214 of core layer 214 2With the angular orientation with respect to the XY plane, this causes vertical interval between core layer 204 and 214 from part 214 2The left side increase (seeing Fig. 2 A) to the right gradually.In exemplary embodiments, part 214 2And the angle between the XY plane is greater than about 3 degree.The third part 214 of core layer 214 3Usually and the XY plane parallel, and be connected to the waveguide optical grating 240 (seeing Fig. 2 A and 2C) that is defined in the core layer 214.
Referring to Fig. 2 B, core layer part 214 1And the underlie part and the core layer 204 generation structures 230 of outer shell 206.The various parameters (for example each forms the thickness and the refractive index of layer) that can select waveguide 210 and 220 are with two waveguides in the matching structure aspect propagation constant 230.Have in fact in waveguide 210 and 220 under the situation of the propagation constant that equates, the fadout optically-coupled between the core layer 204 and 214 in the structure 230 will cause and be constrained on the luminous energy in the waveguide at first and on the distance (Λ) by equality (1) statement, be sent in fact fully in another waveguide:
Λ = π β e - β o - - - ( 1 )
β wherein eAnd β oBe respectively the even number propagation constant and the odd number propagation constant of matched waveguide.
Hypothesis optical signalling (for example, from OSP part 120 receptions of Fig. 1) is constrained on the waveguide 210 at first now, and propagates towards structure 230 from the left side of Fig. 2 A.The X size of if structure 230 (in Fig. 2 B, being labeled as L) through be chosen as (2m+1) Λ (wherein m be 0 or positive integer), the right side of the structure in Fig. 2 A and 2B 230 place then, said optical signalling will mainly constrain in the waveguide 220.When optical signalling gets into core layer part 214 2, the spacing of the increase between core layer 204 and the core layer 214 is destroyed the fadout coupling between waveguide 210 and the waveguide 220, and causes optical signalling after this to keep constraining in the waveguide 220.
Note, for positive m value, waveguide 220 and waveguide 210 fully separate be coupled with the fadout between the waveguide at the place, right side that destroys said structure before, spatially beat m time between the waveguide 210 and 220 of the energy of optical signalling in structure 230.As used herein, term " beating in a space " refers to change the steric course that optical power distributes, for example, from the state that mainly is tied to waveguide 210 to the state that mainly is tied to waveguide 220 and then get back to waveguide 210.Can be used for limiting power the more representative threshold value of distributed process be included in 80% of the interior total optical power of horizontal (YZ) xsect of structure 230 for (for example).Through using this threshold value,, we can say that optical power mainly is tied to said waveguide when the waveguide mode corresponding to one in the waveguide contains the about 80% time of total optical power in the lateral cross.
The core layer part 214 of waveguide 220 2And 214 3Optical signalling is directed to waveguide optical grating 240 from structure 230.In exemplary embodiment, waveguide optical grating 240 comprises a plurality of cavitys, column and/or hole, and it etches into or be formed on the upper surface of core layer 214 to form one dimension or two-dimensional pattern (seeing Fig. 2 A and 2C).This pattern causes the power of optical signalling just reaching on the negative Z direction from waveguide optical grating 240 vertical diffractions.The representative grating that can be used as waveguide optical grating 240 is disclosed in the 7th, 065, No. 272 United States Patent (USP)s of (for example) preceding text citation.
In an exemplary embodiment, core layer 214 is by the silicon manufacturing, and outer shell 212/216 is by the silicon dioxide manufacturing.This combination of material makes waveguide optical grating 240 can have core and last outer shell and lower casing layer high relatively contrast of refractive index between the two, for example about 0.57 (for core and shell refractive index of being respectively about 3.5 and 1.5).Indicate like preceding text, higher contrast of refractive index is favourable, because it makes waveguide optical grating 240 that the waveguide mode of waveguide 220 can be provided and is formed or transmitted by the energy efficiently between the normal beam that do not guide that waveguide optical grating receives by waveguide optical grating.In other words, relatively the grating of " by force " is used at the last many light of diffraction of relatively short distance (for example, equaling the distance of fiber mode width), this be (for example) through have with respect on core refractive index low-down-the shell refractive index realizes.This " by force " grating reduces the effective refractive index of core, and therefore, in order to make light still by the kernel boot in the grating region, lower casing is implemented as the low-down refractive index that has with respect to core refractive index.
Bearing on the Z direction by the interface 211 between the rayed outer shell 206 and 212 of waveguide optical grating 240 diffraction (seeing Fig. 2 A and 2C) and partly by interface 211 reflections.Through the light of reflection then with on positive Z direction by the interference of light of waveguide optical grating 240 diffraction.In one embodiment, select the thickness of the outer shell 212 of waveguide optical grating 240 belows, make reflection leave the light at interface 211 with on positive Z direction by the light interference longways mutually of waveguide optical grating diffraction.Said constructive interference is favourable, because it improves the coupling efficiency between PIC (having optical coupler 200) and near the external fiber (it is waveguide optical grating 240, and (in the projection of Fig. 2 A) side that goes up that is close to said coupling mechanism is located).
Equality (2) is provided for selecting the guidance of following parameter: (i) thickness of the outer shell 212 of waveguide optical grating 240 belows and (ii) some parameter of waveguide optical grating:
L s n s + L eff n g = p λ 2 - - - ( 2 )
L wherein sAnd n sBe respectively the thickness and the refractive index of outer shell 212; L EffBe the coverage between interface 211 and the waveguide optical grating 240; n gRefractive index for the core layer in the waveguide optical grating 240 214; λ is a light wavelength; And p is a positive integer.Mark is corresponding to L in Fig. 2 C sAnd L EffSize.
Can be through using the corresponding appropriate pattern in cavity, groove or hole, to the efficiency of energy delivery of any selected wavelength or scope or Wavelength optimization grating 240.For instance, the 7th, 065, No. 272 United States Patent (USP)s of preceding text citations disclose the pattern of the light with the wavelength between about 1500nm and the about 1600nm of can be used for being coupled efficiently.Be understood by those skilled in the art that,, can (for example) revise the pattern that is disclosed through the periodicity that suitably changes the cavity in the said grating for the waveguide optical grating of other wavelength that obtains to be suitable for efficiently to be coupled.
Fig. 3 A shows the vertical view of pattern 340 and 350 respectively to B, and said pattern can be used in the waveguide optical grating 240 according to some embodiments of the present invention.Pattern 340 (Fig. 3 A) comprises with rectangular arrangement a plurality of holes 344 by rows.Figure 35 0 (Fig. 3 B) comprises a plurality of parallel slots 354.The pitch along directions X of each pattern is approximately λ/n, and wherein n is the refractive index of grating material.In one embodiment, the degree of depth of hole 344 and groove 354 is between about 100nm and about 200nm.The width of the diameter in hole 344 and groove 354 pitch about 40% and 60% between.
Numerical simulation with optical coupler 200 (Fig. 2 A) of waveguide optical grating pattern 350 (Fig. 3 B) indicates said optical coupler that the coupling efficiency of about 35% between waveguide 210 and the external fiber can be provided.The representative characteristic of various assemblies of optical coupler that is used for numerical simulation is following: (i) arsenic phosphide indium gallium core layer 204 has about 3.388 refractive index and the thickness of about 200nm; (ii) indium phosphide outer shell 202/206 has about 3.17 refractive index; (iii) amorphous silicon core layer 214 has about 3.48 refractive index and the thickness of about 400nm; And (iv) silicon dioxide outer shell 212/216 has about 1.58 refractive index.Vertical interval between the core layer 204 and 214 in the structure 230 is 200nm, and this produces the distance lambda of partly beating (seeing equality (1) equally) of about 10.5 μ m.The thickness of the outer shell 212 of waveguide optical grating 240 belows is about 700nm.
Fig. 4 shows the process flow diagram of the manufacturing approach 400 can be used for making optical coupler 200 according to an embodiment of the invention.As obviously visible from following description, method 400 is suitable for a large amount of commercial production easily.By contrast; The typical art methods that is used to make the optical coupler with coupling efficiency suitable with the coupling efficiency of optical coupler 200 is quite complicated and is inappropriate for a large amount of commercial production, and (for example) is because it relates to the step of the pre-processed wafer (wafer corresponding to the active part of PIC and another wafer corresponding to waveguide optical grating) of two separation of flip-chip bonded.
At step 402 place of method 400, form waveguide 210: (i) deposition or growth core layer 204 on substrate 202 through following substep; (ii) use lithographic process patterning and etching core layer 204 to be formed for the leg layout of to print of waveguide 210; And (iii) on core layer 204 and substrate 202, deposit or growth outer shell 206 (seeing Fig. 2 A).Notice that substep processing (ii) can be carried out with step 410 at least in part concurrently.
At step 404 place, on outer shell 206, form wedge-shaped enclosure layer 212 (seeing Fig. 2 A).At the first substep place of step 404, the deposition or the initial outer shell 212 of growing on outer shell 206 make said layer extend across the whole width of the coupling mechanism in the formation, for example from the left side of Fig. 2 A to the right side.At the second substep place of step 404, cover outer shell 212 corresponding to core layer part 214 3And the part of waveguide optical grating 240, and make resulting structures stand wet etch process.Because silicon dioxide (being used to implement the typical material of outer shell 212) is non-crystalline material,, thereby near the edge of mask, produce the nature inclined wall so it is with isotropic in fact mode etching.This inclined wall becomes and is positioned at core layer part 214 among Fig. 2 A 2The wedge-like portion of the outer shell 212 of below.The angle of said wedge is the function of vertical etch rate and lateral etch rate, and said vertical etch rate and lateral etch rate are all by the chemical composition of etchant and the temperature control of enforcement Wet-type etching.Outer shell 206 is used as etching stopping layer in the not shaded portions of said structure.After Wet-type etching is accomplished, peel off said mask.
At step 406 place, deposition core layer 214 on the expose portion of wedge-shaped enclosure layer 212 and outer shell 206.The suitable deposition process that is used for step 406 is plasma enhanced chemical vapor deposition or electron beam evaporation.The vertical section of core layer 214 meets the topological structure of its basic unit (that is outer shell 212 and 206) usually.Then, use lithographic process patterning and etching through deposition core layer 214, to be formed for the area occupied layout of being wanted of waveguide 220 and evanescent coupler 230.
At step 408 place, patterning and be etched in the core layer 214 that step 406 place produces in corresponding to the part of waveguide optical grating 240 defines cavity, hole and/or the groove of said grating with formation.
At step 410 place, deposition outer shell 216 on the structure of step 408 place generation.The outside surface of outer shell 216 is through polishing and randomly by the ARC covering, to produce the final structure of the optical coupler of showing among Fig. 2 A 200.
Such as in this instructions use, term " contrast of refractive index " refers to the value that obtains through the difference between the refractive index of the refractive index of removing core with the refractive index of core and shell.
The present invention can other specific device and/or method embodiment.It only is illustrative and nonrestrictive that described embodiment is considered in all respects.In particular, scope of the present invention is by the appended claims indication rather than by description among this paper and figure indication.In the meaning of the equivalent of claims and scope change and should be included in the scope of claims.For instance, various optical device can be embodied as corresponding monolithic PIC, comprise being embodied as plane receiver card or circuit in fact.
Describe and graphic principle of the present invention only is described.Therefore, will understand, the those of ordinary skill in affiliated field can design various layouts, though clearly describe in this article or displaying, said various layouts embody principle of the present invention and are included in its spirit and the scope.In addition; All instances of quoting among the present invention only mainly be intended to help reader understanding's principle of the present invention significantly from aims of education and by inventor's contribution promoting this technology conception, and should be understood that to be not restricted to this type of instance of clearly quoting from and condition.In addition, quote from principle of the present invention, aspect and embodiment with and this paper of particular instance in all statements be intended to contain its equivalent.
Only if otherwise clearly statement, otherwise that each numerical value and scope should be interpreted as is approximate, just looks like that word " pact " or " approx " are before said value or scope.
Further will understand; Under situation about not breaking away from like the scope of the present invention in appended claims, explained, the those skilled in the art can make the various changes that have been described and explained with details, material and the layout of the part of explaining character of the present invention.
Though quote from the element (if existence) in the appended claim to a method by particular order with correspondence markings; Only if hint is used for implementing some of those elements or whole particular order but claim is quoted from otherwise, otherwise those elements not necessarily are intended to be limited to said particular order enforcement.
Among this paper the reference of " embodiment " or " embodiment " being meaned the special characteristic, structure or the characteristic that combine said embodiment to describe can be included among at least one embodiment of the present invention.Appearance in phrase " in one embodiment " each position in instructions differs to establish a capital and refers to same embodiment, and independent or alternate embodiment is also not necessarily repelled with other embodiment each other.This is equally applicable to term " enforcement ".
In whole detailed description, not to scale (NTS) is drawn graphicly only is illustrative and is used for explaining and unrestricted the present invention.The use of term (for example height, length, width, top, bottom) has been merely the promotion description of the invention, and is not intended to and limit the invention to certain orientation.For instance, highly not only hint vertical uplift restriction, but be used for discerning one in the three-dimensional of the three-dimensional structure of showing like figure.At electrode is under the situation of level, and this " highly " will be for vertical, and under electrode is vertical situation, what this " highly " will be for level, or the like.Similarly, though all figure are shown as flat seam with different layers, this orientation is only started from descriptive purpose and should not be construed as restriction.
Same from this purpose of description; Term " coupling ", " making coupling ", " being coupled " " connection ", " making connection " or " by connecting " refer to permission energy-delivering any way between two or more elements known or that develop afterwards in this technology, and the insertion of expection (but not requiring) one or more additional element.On the contrary, there is not this type of additional element in hints such as term " directly coupling ", " directly connecting ".

Claims (10)

1. device, it comprises:
First optical waveguide, it is supported on the surface of substrate;
Second optical waveguide, it is supported on the said surface;
Optical coupler, it is supported on the said surface and with said first and second waveguide of optical mode coupling; And
Waveguide optical grating; It is supported on the said surface and is suitable for forming or be applied at one or more waveguide modes of said second waveguide and by said waveguide optical grating between the light beam of said waveguide optical grating and transmits optical power; Wherein said second waveguide has skew-transition zone; To said zone, the core of said second waveguide has offset distance, and said offset distance changes to different second distances gradually from first distance corresponding to said optical coupler.
2. invention according to claim 1, wherein:
The shell of said second waveguide comprises the wedge-like portion that is arranged in said skew-transition zone;
The contrast of refractive index of said second waveguide is greater than the contrast of refractive index of said first waveguide;
The core of said first waveguide comprises ternary, quaternary or five yuan of III-V family alloys;
The shell of said first waveguide comprises binary III-V compounds of group;
The said core of said second waveguide comprises silicon; And
The said shell of said second waveguide comprises silicon dioxide.
3. invention according to claim 1, wherein said optical coupler is through said first and second optical waveguide of evanescent field coupling.
4. invention according to claim 3, wherein said optical coupler have causes luminous energy between said first and second optical waveguide, spatially to be beated once or the length once.
5. invention according to claim 1, the said core of wherein said second optical waveguide comprises:
First, it is parallel with the principal plane of said substrate in fact;
Second portion, it is arranged in said skew-transition zone; And
Third part, it is parallel with said principal plane in fact, wherein:
Said second portion be connected said first and third part between; And
Said waveguide optical grating is defined in the said third part.
6. invention according to claim 1, wherein said second offset distance make said device produce constructive interference between the following light: (i) by said waveguide optical grating towards the interface diffraction between the shell of the shell of said first optical waveguide and said second optical waveguide and the light that then returns by said boundary reflection reach (ii) with the direction of said catoptrical direction of propagation conllinear on by the light of said waveguide optical grating diffraction.
7. invention according to claim 1, wherein:
The core of first waveguide has the 3rd offset distance with respect to said substrate; And
Outside the scope of said the 3rd offset distance between said first distance and said second distance.
8. invention according to claim 1, wherein:
The core of said first waveguide comprises the side direction tapering part that is connected to said optical coupler;
Said device further comprises the optical signalling that is supported on the said substrate and handles the OSP circuit, and wherein said first waveguide is coupled to said OSP circuit with optical mode;
Said OSP circuit comprises at least one active optical component; And
Said first and second waveguide, said waveguide optical grating and said OSP circuit are the part that is formed at the photonic integrated circuits PIC on the said substrate.
9. photonic integrated circuits PIC, it comprises:
Substrate;
Optical signalling is handled the OSP circuit, and it is supported on the said substrate and has at least one active optical component;
First optical waveguide, it is coupled to said active optical component with optical mode;
Second optical waveguide, it has waveguide optical grating, and said waveguide optical grating is suitable for forming or be applied at one or more waveguide modes of said second optical waveguide and by said waveguide optical grating between the light beam of said moire and transmits optical power; And
Optical coupler; It is through said first and second waveguide of evanescent field coupling; Wherein said second optical waveguide has skew-transition zone; In said zone, the core of said second optical waveguide has the offset distance with respect to said substrate, and said offset distance tapers to different second distances from first distance.
10. method of making optical device, it comprises:
The substrate that has first optical waveguide on it is provided, and said first optical waveguide has the outer shell that has wedge-like portion;
On said wedge-like portion, form the core of second optical waveguide; And
In the said core of said second optical waveguide, form array of cavities to define waveguide optical grating therein, the wherein said step that provides comprises:
In said first optical waveguide, form the sheathing material layer; And
Make said layer stand the Wet-type etching process to form said wedge-like portion from said layer.
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