CN102800362A - Over-erasing processing method and processing system of nonvolatile memory - Google Patents
Over-erasing processing method and processing system of nonvolatile memory Download PDFInfo
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Abstract
The invention provides an over-erasing processing method of a nonvolatile memory. The method comprises the following steps: applying a processing voltage higher than the target threshold voltage to the word lines of all memory units in a logic block; verifying whether the threshold voltage of each memory unit is higher than or equal to the target threshold voltage; if so, ending the operation; otherwise, going to the next step; and performing soft programming operation on all memory units of which the threshold voltage is lower than the target threshold voltage after the verification, and returning to the previous step. The invention also provides an over-erasing processing system of a nonvolatile memory, which is used for realizing the method. The over-erasing processing method and processing system of a nonvolatile memory provided by the invention can quickly recover all memory units to the normal erasing state, thereby saving the over-erasing processing time and improving the test efficiency.
Description
Technical field
The present invention relates to the semiconductor memory technologies field, the mistake that particularly relates to a kind of nonvolatile memory is wiped disposal route and disposal system.
Background technology
For the correctness of verifying memory product, before product export, can carry out a series of testing process.These storage productss can comprise non-volatility memorizer product (for example, flash memory Flash, or can electricity remove programmable read only memory EEPROM etc.), also can comprise One Time Programmable OTP class storer.General testing process can comprise the test of short circuit/out of circuit test, logic function, electric erasing characteristic test (whether can be wiped and write new data by electricity to judge the data in this volatile storage), procedure code test (procedure code that will write this non-volatility memorizer is read and compared with this write-in program sign indicating number, and is whether correct with the read-write motion of judging this non-volatility memorizer) of product pin (pin) or the like.
In carrying out electric erasing characteristic test process; (Flash Memory) is example with flash memory; It is a kind of storer of based semiconductor; Have and still can keep internal information, online functional characteristics such as erasable after system's power down, flash memory injects mechanism through thermoelectron to be realized device programming, adopts tunnel effect to realize wiping.
In order to accelerate the process of erase step, generally all can apply stronger erased conditions and wipe (erase) operation, in this case, the state of (over-erase) then possibly appear wiping in some storage unit (cell) in the logical block (block).Crossing the main cause that erase status forms is: suppose that grid G end at a flash memory applies-voltage of 8V, source S end and substrate apply+voltage of 7V, and the drain D end is making alive not, the duration of single erasing pulse from several milliseconds to a few tens of milliseconds.In erase process,, then need to apply erasing pulse to whole logical block again as long as have storage unit not reach erase status in a logical block.Owing to the last electron number of the FG of each storage unit in the logical block is all different, so each storage unit receives the influence of erasing pulse also different.Promptly when certain logical block applies erasing pulse; Electronics in this logical block on the FG of each storage unit is also different to the number of substrate migration; When repeatedly applying erasing pulse all storage unit all reach erase status in logical block, the threshold voltage (V of the storage unit that those electron transfer numbers are more
T) possibly will be lower than the erase status scope, at this moment, these threshold voltages are lower than the erase status range storage unit and just were in erase status.
Generally, after the erase status of logical block is accomplished, (promptly refer to erase_verify verification erase operation success back), adopt stronger soft programming condition to return to normal erase status to the storage unit that was in erase status.Promptly cross the storage unit of wiping and constantly apply programming pulse, up to returning to normal erase status to these storage unit to these.Yet owing to through the erase operation than strong erased conditions, can cause the threshold voltage distribution wide range of storage unit in the logical block, the threshold voltage of some storage unit is low excessively, even is lower than 0V.In this case, through the soft programming operation, the threshold voltage that still also has partial memory cell is lower than 0V or just is a bit larger tham 0V, can't return to normal erase status.Therefore, generally, can carry out quadratic programming and handle, be about to handle the word line that the back threshold voltage still is lower than 0V or is a bit larger tham the storage unit of 0V and apply voltage, up to returning to normal erase status through once crossing to wipe.But quadratic programming is just operated partial memory cell, when needs apply voltage, need be according to this partial memory cell address carrying out one by one, and the time that is therefore spent is longer, has reduced the whole efficiency of test.
Summary of the invention
Technical matters to be solved by this invention provides a kind of mistake of nonvolatile memory and wipes disposal route and disposal system; Can make all storage unit return to normal erase status fast; Saved and spent the time of wiping processing, improved the efficient of test.
In order to address the above problem, the mistake that the invention discloses a kind of nonvolatile memory is wiped disposal route, may further comprise the steps:
In logical block, apply processes voltage on the word line of all storage unit greater than target threshold voltage;
Whether the threshold voltage of all storage unit of verification more than or equal to target threshold voltage, if, end operation then, otherwise, then carry out next step;
All threshold voltages after the verification are carried out the soft programming operation less than the storage unit of target threshold voltage, and return a step.
Further, the choosing method of said processes voltage is:
Confirm target threshold voltage and overdrive voltage;
The value of said processes voltage is target threshold voltage and overdrive voltage sum.
Further, the value of said target threshold voltage is the minimum value of normal erase status threshold voltages scope.
Further, the span of said target threshold voltage is 0.5V-1V.
Further, whether the threshold voltage of said all storage unit of verification may further comprise the steps more than or equal to target threshold voltage:
Select a reference memory unit, the threshold voltage of said reference memory unit is a target threshold voltage, and applies a reference voltage for the word line of this storage unit, obtains the predetermined reference electric current;
Apply a positive voltage for the word line of each storage unit to be verified, draw the measurement electric current in this storage unit to be verified;
Relatively reference current is measured electric current with each, if measure electric current greater than reference current, then the threshold voltage of storage unit is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
Further, said predetermined reference electric current confirms that according to the size of logical block logical block is big more, and the predetermined reference electric current is big more.
Further, the span of said predetermined reference electric current is 10 μ A-20 μ A.
Further, give target threshold voltage and the overdrive voltage sum of the value of the positive voltage that the word line of storage unit to be verified applies for this storage unit to be verified.
The upper limit of the threshold voltage when further, said overdrive voltage and said target threshold voltage sum are not more than said storer and are in normal erase status.
Further, the span of said overdrive voltage is between the 0.1V to 0.3V.
Further; Whether the threshold voltage of said all storage unit of verification also comprises more than or equal to target threshold voltage: when the word line of giving storage unit to be verified applies a positive voltage, give with the said same bit line of storage unit to be verified on the word line of other storage unit on apply a negative voltage.
In order to address the above problem, the mistake that the invention also discloses nonvolatile memory is wiped disposal system, comprising:
Voltage applies module, and the word line of all storage unit in the logical block is applied the processes voltage greater than target threshold voltage;
The verification module, whether the threshold voltage that is used for each storage unit of verification after superpotential applies is more than or equal to target threshold voltage;
The soft programming module is used for threshold voltage is carried out the soft programming operation less than the storage unit of target threshold voltage.
Further, said verification module comprises:
Voltage applies submodule, and reference memory unit and each storage unit are applied voltage;
The current measurement submodule is measured the reference current of reference memory unit and the measurement electric current of each storage unit;
Comparison sub-module compares the reference current that produces in the reference memory unit and the measurement electric current of each storage unit; If measure electric current greater than reference current, then the threshold voltage of storage unit is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
Compared with prior art, the present invention has the following advantages:
The mistake of nonvolatile memory of the present invention is wiped disposal route and disposal system through through all storage unit in the logical block are applied the mode greater than target threshold voltage simultaneously, can make most of storage unit return to normal erase status fast.Then remaining threshold voltage is carried out the soft programming operation simultaneously less than the storage unit of target threshold voltage, all return to normal erase status up to all storage unit.In processing procedure, can operate a plurality of storage unit simultaneously, need not to operate one by one according to the address of storage unit, therefore saved and spent the processing time of wiping, thereby improved the efficient of test.
Further; The threshold voltage of all storage unit of verification whether more than or equal to target threshold voltage in; Apply positive voltage on the word line for storage unit to be verified and apply negative voltage on the word line to the remaining memory cell on the same bit line simultaneously; Can avoid on bit line producing leakage current and influence the accuracy of measuring electric current, improve the accuracy of checking procedure.
Description of drawings
Fig. 1 is the process flow diagram that the mistake of a kind of nonvolatile memory of the present invention is wiped disposal route embodiment;
Fig. 2 is the process flow diagram of the method embodiment one of the mistake of a kind of nonvolatile memory of the present invention threshold voltage of wiping the verification storage unit among the disposal route embodiment;
Fig. 3 is the process flow diagram of the method embodiment two of the mistake of a kind of nonvolatile memory of the present invention threshold voltage of wiping the verification storage unit among the disposal route embodiment;
Fig. 4 is the structural representation that the mistake of a kind of nonvolatile memory of the present invention is wiped disposal system embodiment one;
Fig. 5 is the structural representation that the mistake of a kind of nonvolatile memory of the present invention is wiped disposal system embodiment two.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, below in conjunction with accompanying drawing and embodiment the present invention done further detailed explanation.
For making those skilled in the art understand the present invention better, the principle of compositionality of following brief account nonvolatile memory.
Nonvolatile memory is made up of storage unit (cell), and cell comprises electric capacity and transistor, and the data among the cell depend on the electric charge that is stored in the electric capacity, the access of transistorized switch control data.Generally speaking, cell can comprise source electrode (source, S), drain electrode (drain, D), grid (gate, G), and floating grid (floating gate, FG), floating grid FG can be used for connecing voltage VG.If VG is a positive voltage, produce tunnel effect between floating grid FG and the drain D, make electronics inject floating grid FG, i.e. programming writes; Wipe then and can utilize the tunnel effect between floating grid FG and the source S, be attracted to substrate to the electric charge that is injected into floating grid FG (negative charge or positive charge) at substrate making alive (positive voltage or negative voltage).The cell data are 0 or 1 to depend on whether electronics is arranged among the floating grid FG.If floating grid FG has electronics, induce positive conducting channel between source S and the drain D, make the metal-oxide-semiconductor conducting, i.e. expression deposits 0 in.If do not have electronics among the floating grid FG, then do not form conducting channel, not conducting of metal-oxide-semiconductor promptly deposits 1 in.
With reference to figure 1, the mistake that a kind of nonvolatile memory of the present invention is shown is wiped disposal route embodiment one, may further comprise the steps:
Apply processes voltage on the word line through all storage unit in logical block greater than target threshold voltage; Can promote the threshold voltage of storage unit; Operation simultaneously can be shortened the mistake of the integral body of a logical block and wipe the time of processing, thereby improves the efficient of wiping processing.
Wherein, the size of processes voltage is that target threshold voltage and overdrive voltage sum are confirmed.Target threshold voltage is to satisfy the minimum value of normal erase status threshold voltages scope in the technological process.It is big or small that near the threshold value that for example, will belong to " less than 0 or near 0 " of wiping category is adjusted to the threshold voltage that satisfying of " greater than 0.5V " normally wipe.Then this 0.5V is a target threshold voltage.Generally the span of target threshold voltage is between the 0.5V-1V.Overdrive voltage is a value that is provided with in order to improve the effect of wiping, and is in order to make after superpotential applies step, and more storage unit is in normal erase status.Because the threshold voltage of storage unit need be in a span interval; This storage unit just belongs to the storage unit that is in normal condition; Therefore; The value of overdrive voltage can not be too big, otherwise can make the storage unit after voltage applies surpass the scope that threshold voltage allowed easily, so the upper limit of the threshold voltage when overdrive voltage and target threshold voltage sum should be in normal erase status less than storer.Equally, the value of overdrive voltage can not be too little, if too little, role is less when voltage applies, needs more pulse just can make storage unit return to normal erase status.So in general processing procedure, the value of overdrive voltage is between the 0.1V to 0.3V.
Whether step 102, the threshold voltage of all storage unit of verification more than or equal to target threshold voltage, if, end operation then, otherwise, then carry out step 103.
After voltage applies, need carry out verification operation, whether return to normal erase status to judge the storage unit after superpotential applies.If after the verification; All storage unit all return to normal erase status, and promptly threshold voltage all is greater than or equal to target threshold voltage, so just explain that wiping processing accomplished; This test finishes, and can carry out wiping other operations after the processing.If the threshold voltage that also has partial memory cell, explained then that wiping processing does not also have completion, need carry out subsequent operation less than target threshold voltage.
Because through after the operation of step 101; Most of storage unit can both return to normal erase status; The storage unit that also was in erase status is a sub-fraction, and the threshold voltage of the storage unit of this part also obtained suitable lifting, so; At this moment remaining storage unit is carried out the soft programming operation, just can make these storage unit return to normal erase status.Wherein, (bit line BL) carries out, and need not to carry out one by one according to the address of storage unit, thereby can shorten the time that soft programming is operated, and raises the efficiency based on bit line in the soft programming operation.After carrying out a soft programming operation, possibly also have partial memory cell and be in erase status, after verification, just can carry out the soft programming operation once more, so repeat, return to normal erase status up to all storage unit.
With reference to Fig. 2, the threshold voltage V of aforesaid verification storage unit
TWhether can adopt following steps more than or equal to target threshold voltage:
D1 selects a reference memory unit, and the threshold voltage of said reference memory unit is a target threshold voltage, and applies a reference voltage for the word line of this storage unit, obtains the predetermined reference electric current.
D2 applies a positive voltage for the word line of each storage unit to be verified, draws the measurement electric current in this storage unit to be verified, and wherein, the value of this positive voltage is the target threshold voltage and the overdrive voltage sum of storage unit to be verified.
D3, relatively reference current with measure electric current, if measure electric current greater than reference current, then the threshold voltage of storage unit is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
Wherein, the reference voltage of the word line of reference memory unit can be confirmed according to the threshold voltage of required reference current and reference memory unit.Generally, required reference current value confirms that according to the size of the logical block of required test logical block is big more, and required reference current is also just big more, otherwise, then more little.For the logical block of normal sized, required reference current value is generally between 10 μ A-20 μ A.For general reference memory unit, the difference of the reference voltage that applies and the threshold voltage of reference memory unit can access such reference current between 0V～3V the time usually.For example, if the threshold voltage of reference memory unit is 1V, the predetermined reference electric current is 10 μ A, if for current reference memory unit, reference voltage is set to the electric current that 3V can access 10 μ A, and reference voltage then is set to 3V so.In addition, for each element on the protected storage, reference voltage is taked less value as far as possible.For example, 3V or 4V.Definite method of the overdrive voltage in the definite and preceding method of overdrive voltage is identical, also is to get between the 0.1V to 0.3V usually.
Below in conjunction with the threshold voltage V of instance to aforesaid verification storage unit
TWhether be elaborated more than or equal to target threshold voltage.
The hypothetical target threshold voltage is 0.5V, and then the threshold voltage of reference memory unit also is 0.5V.After superpotential applies, the threshold voltage V of the storage unit of part is arranged still
TLess than target threshold voltage, and the threshold voltage V of this part
TDistribution range between-0.8V～0.2V.
So; In the process of verification; The predetermined reference electric current is 10 μ A, and the electric current that the difference of the positive voltage that this predetermined reference electric current and word line to storage unit to be verified apply and the threshold voltage of storage unit to be verified produces on this storage unit to be verified during for driving voltage is identical.Through calculating, the reference voltage that apply this moment is that 2V just can obtain the predetermined reference electric current, so just can apply the reference voltage of 2V to reference memory unit.。
As previously mentioned, on the word line of storage unit to be verified, apply the positive voltage of target threshold voltage and overdrive voltage sum, i.e. the positive voltage of 0.6～0.8V.Suppose that overdrive voltage is 0.2V, so added positive voltage is 0.7V, if this moment this storage unit to be verified threshold voltage V
TLess than target threshold voltage, the voltage difference that is applied to so between the threshold voltage of voltage and this storage unit to be verified on the word line of this storage unit to be verified can be greater than overdrive voltage.So; If voltage difference is greater than overdrive voltage, then therefore the measurement electric current on the word line of storage unit at this moment to be verified can be greater than reference current; The threshold voltage that can judge this storage unit to be verified this moment is less than target threshold voltage 0.5V, and existed this moment wipes.Otherwise the threshold voltage that then can judge this storage unit to be verified is more than or equal to target threshold voltage.
With reference to Fig. 3, further, can also give among the above-mentioned steps D2 with the same bit line of storage unit on other storage unit word line on apply a negative voltage.On other storage unit word line, apply negative voltage and can guarantee can not produce leakage current on the bit line, avoid the measurement electric current in the storage unit is exerted an influence, guarantee the accuracy of the measurement electric current of storage unit.This negative voltage also can be according to remaining threshold voltage V
TThreshold voltage V less than the storage unit of target threshold voltage
TDistribution range confirm.In order to guarantee validity, the negative voltage that applies usually is equal to or less than remaining threshold voltage V
TMinimum value.For example, if minimum threshold voltage V
T=-1V, the negative voltage that then applies can be-1V, also can be less than-1V.
With reference to Fig. 4, the mistake that a kind of nonvolatile memory of the present invention is shown is wiped disposal system 100, comprises that voltage applies module 10, verification module 30 and soft programming module 50.
Voltage applies module 10, and the word line of all storage unit in the logical block is applied the processes voltage greater than target threshold voltage.Therefore need apply processes voltage simultaneously to the word line of all storage unit, so voltage applies module 10 and can realize the voltage application to all storage unit through the mode of processor control.
With reference to Fig. 5, further, comprise also in this verification module 30 that voltage applies submodule 31, current measurement submodule 32 and comparison sub-module 33.
At first apply submodule 31 and apply certain reference voltage for the storage unit of a reference, apply the positive voltage of a target threshold voltage and overdrive voltage sum for then less than the storage unit of target threshold voltage threshold voltage through voltage.Wherein can adopt a plurality of voltages to apply submodule 31, the position of each voltage to be applied is provided with a voltage and applies submodule 31, with convenient needed voltage is regulated.
The reference current that produces in 33 pairs of reference memory units of comparison sub-module and the measurement electric current of each storage unit compare; If measure electric current greater than reference current; The threshold voltage that storage unit then is described is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.In the present embodiment; Comparison sub-module 33 can be a Sense Amplifier (sensor amplifier) circuit; Through Sense Amplifier circuit the measurement electric current of storage unit and the reference current of reference unit are compared; Export comparative result then, like " 1 " (representative is measured electric current less than reference current) or " 0 " (representative is measured electric current greater than reference current).
Each embodiment in this instructions all adopts the mode of going forward one by one to describe, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For system embodiment, because it is similar basically with method embodiment, so description is fairly simple, relevant part gets final product referring to the part explanation of method embodiment.
More than the mistake of a kind of nonvolatile memory provided by the present invention is wiped disposal route and disposal system has been carried out detailed introduction; Used concrete example among this paper principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that on embodiment and range of application, all can change, in sum, this description should not be construed as limitation of the present invention.
Claims (13)
1. the mistake of a nonvolatile memory is wiped disposal route, may further comprise the steps:
In logical block, apply processes voltage on the word line of all storage unit greater than target threshold voltage;
Whether the threshold voltage of all storage unit of verification more than or equal to target threshold voltage, if, end operation then, otherwise, then carry out next step;
All threshold voltages after the verification are carried out the soft programming operation less than the storage unit of target threshold voltage, and return a step.
2. the method for claim 1 is characterized in that, the choosing method of said processes voltage is:
Confirm target threshold voltage and overdrive voltage;
The value of said processes voltage is target threshold voltage and overdrive voltage sum.
3. method as claimed in claim 2 is characterized in that, the value of said target threshold voltage is the minimum value of normal erase status threshold voltages scope.
4. method as claimed in claim 3 is characterized in that, the span of said target threshold voltage is 0.5V-1V.
5. the method for claim 1 is characterized in that, whether the threshold voltage of said all storage unit of verification may further comprise the steps more than or equal to target threshold voltage:
Select a reference memory unit, the threshold voltage of said reference memory unit is a target threshold voltage, and applies a reference voltage for the word line of this storage unit, obtains the predetermined reference electric current;
Apply a positive voltage for the word line of each storage unit to be verified, draw the measurement electric current in this storage unit to be verified;
Relatively reference current is measured electric current with each, if measure electric current greater than reference current, then the threshold voltage of storage unit is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
6. method as claimed in claim 5 is characterized in that, said predetermined reference electric current confirms that according to the size of logical block logical block is big more, and the predetermined reference electric current is big more.
7. method as claimed in claim 6 is characterized in that, the span of said predetermined reference electric current is 10 μ A-20 μ A.
8. method as claimed in claim 5 is characterized in that, gives target threshold voltage and the overdrive voltage sum of the value of the positive voltage that the word line of storage unit to be verified applies for this storage unit to be verified.
9. like claim 2 or 8 described methods, it is characterized in that the upper limit of the threshold voltage when said overdrive voltage and said target threshold voltage sum are not more than said storer and are in normal erase status.
10. method as claimed in claim 9 is characterized in that, the span of said overdrive voltage is between the 0.1V to 0.3V.
11. method as claimed in claim 5; It is characterized in that; Whether the threshold voltage of said all storage unit of verification also comprises more than or equal to target threshold voltage: when the word line of giving storage unit to be verified applies a positive voltage, give with the said same bit line of storage unit to be verified on the word line of other storage unit on apply a negative voltage.
12. the mistake of a nonvolatile memory is wiped disposal system, it is characterized in that, comprising:
Voltage applies module, and the word line of all storage unit in the logical block is applied the processes voltage greater than target threshold voltage;
The verification module, whether the threshold voltage that is used for each storage unit of verification after superpotential applies is more than or equal to target threshold voltage;
The soft programming module is used for threshold voltage is carried out the soft programming operation less than the storage unit of target threshold voltage.
13. system as claimed in claim 12 is characterized in that, said verification module comprises:
Voltage applies submodule, and reference memory unit and each storage unit are applied voltage;
The current measurement submodule is measured the reference current of reference memory unit and the measurement electric current of each storage unit;
Comparison sub-module compares the reference current that produces in the reference memory unit and the measurement electric current of each storage unit; If measure electric current greater than reference current, then the threshold voltage of storage unit is less than target threshold voltage, otherwise, then more than or equal to target threshold voltage.
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