CN102834347A - MEMS device having a membrane and method of manufacturing - Google Patents
MEMS device having a membrane and method of manufacturing Download PDFInfo
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- CN102834347A CN102834347A CN2010800663974A CN201080066397A CN102834347A CN 102834347 A CN102834347 A CN 102834347A CN 2010800663974 A CN2010800663974 A CN 2010800663974A CN 201080066397 A CN201080066397 A CN 201080066397A CN 102834347 A CN102834347 A CN 102834347A
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- film
- block body
- back end
- cantilever
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/06—Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
Abstract
A MEMS deviceis disclosed, comprising a micro-machined bulk body (BB) and a membrane (MM) fixed thereto. The membrane is cut preferably by laser from a flat sheet of metal and bonded to the bulk body.
Description
Background technology
The MEMS device (MEMS=MEMS) that film is incorporated into is used in the multiple different application.Example is microphone, sensor, capacitor, switch and the equipment that uses the other types of flexible membrane with passive or active mode.
Usually, through using plane treatment and piece microcomputer process technology on silicon or ceramic substrate, to make the MEMS device.Such technology comprises like physics and chemical etching, thin layer deposit, forms conductor lines, forms step and the mechanical means as polishing and grinding through conduit (through-conduct).In addition, micro-structure can comprise engagement step, wherein through the whole bag of tricks two wafers is bonded together.
MEMS device with film needs wherein to form in the both sides of film the building method of free space.The free space of substrate-side can be for example the sacrifice layer of deposit forms below the film through being etched in.When as the situation of most of membrane structure, when the depth-to-width ratio of level and vertical size became excessive, above technology had been brought problem.Like this, the removal of sacrifice layer becomes increasingly difficult.In addition, be difficult to realize the high selectivity between sacrifice layer and the permanent layer, potentially extra constraint forced in design.At last, when previous layer for example has the landforms of being made up of protruding and depression, be difficult to produce the plane domain that applies film above that.
Summary of the invention
The object of the present invention is to provide a kind of MEMS device of avoiding these problems of being mentioned with film.
This problem solves through the MEMS device according to claim 1.The method that in other claim, has provided additional embodiments of the present invention and be used to make micro mechanical device.
A kind of MEMS device is provided, and this MEMS device comprises through the block body of microcomputer processing and the film that is fixed to it.This film is not deposit or sputter, but cut down from the planar metal paper tinsel.Can construct the metal forming that can be used as film through in addition any position cutting above the surface of the MEMS device paid close attention to being located immediately at.The technology technology complete and the building block body that this means the structure film is irrelevant.Therefore, the problem that when processing micro-structure block body, occurs has no influence to the technology that forms film.In addition, can be in a step film be formed two-dimensional shapes arbitrarily and do not have any problem and needn't note after step in the landforms on surface of block body of microcomputer processing that film is mounted thereto.
The material of film can be selected from all proper metal paper tinsels.Therefore, the selection of metal does not receive as in the known method, to form the restriction of the demand of etching selection property.Do not exist the restriction of the thickness of metal forming and therefore do not have restriction film thickness.Have no problem ground, metal forming that can the thickness of used thickness between 1 and 50 μ m, it has contained the demand of the most of device that uses such film.In some cases, also can use the metal forming that has littler thickness or make the thickness of given range extension.
In one embodiment, film comprises flat components.In the major applications of MEMS device, flat components is as the plane electrode of device.Therefore the area of flat components is important for the character and the electrical quantity that limit the MEMS device.
Second electrode of MEMS device is fixed electrode and can be integrated in the block body or be fixed to block body normally.
In another embodiment, prevision is from the cantilever of flat components horizontal expansion.In their distal-most end, cantilever is widened the cantilever pad, and the cantilever pad is used for cantilever is fixed to each contact mat on the block body.
Cantilever can exist with arbitrary number.The number of three cantilevers is enough to film is fixed on respect to the surface-stable of block body and position in parallel.According to the operator scheme of microcomputer processing device, the number of cantilever can and can be four or bigger number above three.
Cantilever has enough little width usually so that sufficient flexibility to be provided.Width is selected to provides the cross-sectional area of cantilever that is enough to be provided for film is fixed on enough mechanical strengths of original position.
In another embodiment, cantilever bending with above the plane of flat components/below extend.In addition, cantilever can be crooked or angled in the plane of flat components, provides thus to can be used for compensate film translation planar or compensate the additional length of acting stress in a lateral direction.Cantilever can comprise straight part and sweep.
Cutting technique is used to construct single film and single film is separated with large-area metal forming.Total, cantilever and the cantilever pad that can comprise the film of flat components cut down from metal forming in a workpiece.
In one embodiment, film is suspended between the anchor device that is formed on above the block body.Flat components self or as an alternative cantilever can be fixed to the anchor device on the block body.In this embodiment, film can be smooth, not the extension above the plane of flat components.
The suspending of the film at anchor device place comprises mechanical fixation and electrically contacts.Anchor device can be formed and be in this case the part of block body by the back end layers of being constructed.
In all embodiment, if do not relate to film, then can be as known MEMS or the such MEMS device that forms of cmos device.Block body can comprise having or do not have the semiconductor that is integrated in the integrated circuit in the semiconductor body.In one embodiment, block body can be a ceramic body.
Back end layers is deposited on semiconductor or ceramic body top, and one of them is with the film positioned opposite and as the conducting shell of rear electrode, this rear electrode is worked with film formed first electrode.
Integrated circuit and rear electrode electrically contact and electrically contact through contact and film through each that passes back end layers.Electric connection line through beyond the contact also can be the part of each electrical connection.
Block body comprises semiconductor or ceramic body and deposit back end layers above that.Back end layers can comprise that the layer of identical or different material piles up.These materials can be selected from mechanically stable layer, electrically-conductive layer and electricity isolated layer.The preferred layer of back end layers is known from cmos device, for example is used for given 3D shape is isolated and be used to form to electricity silica or silicon nitride, and comprises that aluminium and tungsten are as the metal level that is used for the most preferred metal of micro-structure technology.Also can use other insulators, polysilicon and metal.
Pass back end layers pass through contact also can comprise be used for being filled in isolate that back end layers produces, be used for other materials through the hole of contact.Tungsten is the preferable alloy that is used to form through contact, because tungsten can deposit has on the bottom and sidewall in hole of big depth-to-width ratio.
In a specific embodiment, the MEMS device is designed to and is used as microphone.Therefore film is fixed to block body and can vibrates or because of the sound deflection that becomes.For optimum operation, device provides back volume (volume).
Back plate is perforated to have back plate hole, so that reduce the damping between film and the back plate.Can in block body, directly below the plate of back, form back volume or cavity.Back plate hole and cavity are processed by means of microcomputer and are constructed.Back volume can through in its bottom through cover sealing pass hole (through going hole) or depression forms.In block body, be located immediately at the back plate below beyond any position, if used the semiconductor piece body, then can integration integrated circuits (IC).Film can be electrically connected to IC with the back plate, creates the monolithic microphone design thus.
Air gap distance between film and the back plate can be by bearing (stand-off) structure qualification at back end layers top.Seat structure can be made up of the perhaps partially enclosed edge of sealing, and it forms the bearing edge at the outer rim place of back plate.If in the bearing edge, realize one or more openings, then they can be as making the balanced air vent of differential static pressure.Air vent also can be constructed in film.
A kind of method that is used to make above-mentioned MEMS device can comprise the steps:
-metal forming is provided
-laser is provided
-utilize the cut paper tinsel to receive film
-the microcomputer processing block body of device is provided,
-the paper tinsel that will have a film of design is transferred to block body and is fixed to block body.
As an alternative, between the joint aging time of laser ablation and film and device, can use reel-to-reel (roll-to-roll) technology to dispose paper tinsel.
Along will be from the periphery guiding laser of the film of metal forming excision.Control device will be controlled the scanning of the lip-deep laser of paper tinsel.
Quantity of power (W/cm according to the required unit are of the cutting of passing paper tinsel
2) select sweep speed.
Smoothness according to the expectation of the cutting outer rim at later film place selects laser to focus on the spot diameter on the metal forming.The spot diameter of 1-30 μ m is suitable.Preferred diameter is between 5 and 20 μ m.
Metal forming can be selected from the suitable metal that provides like the character of the expectation of mechanical strength, elasticity and electric conductivity.For major applications, aluminium is the preferred material of metal forming.Metal forming has the preferably thickness between 1 and 20 μ m, but also can use thicker sheet.
Microcomputer processing block body is semiconductor or ceramic body preferably, and it can comprise the integrated circuit like cmos device.Integrated circuit can provide the operation of MEMS device required electric work ability.These functions can comprise electrical quantity or each other electrical quantitys that detect and measure like voltage, electric capacity, resistance, electric current.In addition, integrated circuit can provide being applied to the voltage of film with the back plate.
In Another Application, integrated circuit can provide the frequency with the electrode that is applied to device, and these frequencies are selected from RF frequency or acoustic frequency.Logic circuit can integrated operator scheme with domination or supervision micro mechanical device.Can comprise that amplifier is to amplify measurement parameter As mentioned above.Any other required calculating operation of the operation of MEMS device or its peripheral circuit can be realized in the inner IC of block body.
In another embodiment, the step that film is fixed to block body can be accomplished through ultrasonic joint.Through this step, film and the contact mat that is arranged on the top surface of block body are electrically contacted.Bonding station on the film can be positioned on the flat components or from the cantilever of flat components extension, preferably be in the cantilever pad place at cantilever distal-most end place.
In one embodiment, the method for manufacturing MEMS device comprises the steps
-before cutting, crosshead is fixed and be restricted to paper tinsel
-when paper tinsel is fixed to crosshead, accomplish and cut
-under the help of crosshead, film is transferred to block body
-film is fixed to block body
-from film releasing operation frame and cut film thus and film is separated with any remaining paper tinsel of a part that does not become film.
In this embodiment, before cutting, crosshead is fixed and be restricted to metal forming.Preferably through allowing easily the mode of release film to accomplish fixing in the step afterwards.The membrane array that uses this to dispose single film and in a step, construct from metal forming.
, accomplishes by paper tinsel cutting when being fixed to crosshead.In this step, cut film successively and cut film at least in part from remaining paper tinsel.Preferably, remaining holding structure is fixed to the film of cutting remaining paper tinsel and therefore is fixed to crosshead.This permission is easily transferred to block body with film under the help of crosshead.Film is fixed to block body when still being connected to crosshead.
In last step, from the crosshead release film.The syndeton that still exists in this stage is cut or breaks off, and therefore film be not to be that any remaining paper tinsel of the part of film separates.
Crosshead comprises the plate like the hard material of glass or metal.This plate preferably has the array of opening, and each opening provides and held the only area of a film.Opening is otch and can has the limited degree of depth.
According to an embodiment, micro mechanical device is used as and is designed with the mini microphone of integrated IC.In this is used, film is energized into acoustic vibration through the sound that gets into.The electrical quantity that changes through the variation of measuring because of film detects vibration.This parameter can be two voltage or electric capacity between the electrode, and first electrode is that the film and second electrode are integrated in the plate of back.
In another embodiment, micro mechanical device is designed to and is used as adjustable condenser.In this was used, film was configured to as travelling electrode, its can with the surperficial vertical direction of flat components in being integrated into back plate second electrode and move away from this second electrode.Moving of film can be initiated by the electrostatic force that causes because of the voltage that is applied to two electrodes.
Adjustable condenser can be conditioned to have two different electric capacity at least, and one of them is basic electric capacity, does not wherein have masterpiece to be used on the film.Second electric capacity can be that wherein film has moved and has been in now apart from the state that is integrated in the nearest position of relative (counter) electrode in the plate of back.Also possible is, adjustable condenser can be by continuous adjusting, makes any position between two extreme positions can be used for providing the electric capacity of the expectation of adjustable condenser.Can form the set of one or more seat structures in the block body between film and back plate.Through increasing the voltage between film and the back plate, film is collapsed in the different bearing set, thereby obtains several discrete electric capacity.
In another embodiment, device is designed to and is used as switch.Here, also can use moving of film.When mobile end, carry out the contact between the film at the contact point place on the block body.
In all were used, second electrode that preferably is integrated in the plate of back was isolated through the relative film electricity of at least one separation layer on second electrode.
Description of drawings
Hereinafter, through describing the clear in more detail the present invention of embodiment and accompanying drawing.Accompanying drawing only is used for illustrated application and is therefore schematically drawn.Some sizes maybe distortion.Therefore, can not directly from accompanying drawing, obtain the ratio of virtually any size or size.
Fig. 1 shows the viewgraph of cross-section of the film that is installed in the block body top,
Fig. 2 shows film from vertical view,
Fig. 3 shows the cross section that passes the device with film,
Fig. 4 shows crosshead,
Fig. 5 shows the schematic cross-section of passing another device with film,
Fig. 6 shows the film with difform cantilever with vertical view.
The specific embodiment
Fig. 1 shows and passes the schematic cross-section that comprises block body BB and the MEMS device of the film MM that is installed in the block body top.In the drawings, block body BB has plane surface, but this is optional for device according to the present invention.Film MM is the metal forming that has been laser-cut into the shape of the required expectation of given application.Film comprises mainly as large tracts of land parts and the flat components PM that is arranged in parallel with the surface of block body BB.
In the outer peripheral areas of the film MM that can be used as cantilever pad or flat components self, film is fixed to block body at symphysis contact MCP place.
In Fig. 1, the symphysis contact is positioned at from the anchor device AN top of the surface protrusion of block body BB.It can also be in the surperficial identical height level place with block body BB.
Fig. 2 shows the schematic plan on the film, and it shows the more detailed details of membrane structure.But the flat components PM of film MM is shown as border circular areas here is not limited to this shape.
The cantilever SA of the periphery that is connected to plane P M is provided.These cantilevers can be formed band, and these bands can be in the plane of flat components PM and/or interior bending.In Fig. 2, cantilever is formed by three straight line portioies, and is angled between per two parts, makes these three parts form character " z ".Cantilever also can comprise the circular portion that does not have the angle.
Cantilever SA will provide flat components PM and be used for cantilever is fixed to flexibly connecting between the cantilever pad SP of block body BB.Cantilever SA can also be as the spring that flexibly connects that flat components is provided.This spring can force and keep flat components PM at the home position with respect to the surface of block body.
But cantilever SA can be manufactured into short as far as possible, the flexible of flat components PM is provided sufficient fixing but be sufficiently long to.The cantilever pad SP at each cantilevered distal end place can be the part of widening of arm, and it has the width of enough areas that the firm engagement technology that allows the surface of cantilever pad SP to block body BB, branch to be clipped to each symphysis contact MCP is provided.
Fig. 3 shows the microcomputer processing device that is implemented as microphone.In this embodiment, block body comprises semiconductor body SB, and back end layers BL is deposited on this semiconductor body top to form rigid structure.Back end layers BL can be the layer that must appear at the cmos device top that is integrated among the semiconductor body SB.As an alternative, back end layers BL only is provided for and forms suitable mechanical solid structure, and it can comprise conductor wire and zone.
In semiconductor body SB, formed IC.Back end layers BL comprises that mainly these layers can come deposit and structure through known method like the layer of the insulating materials of oxide or nitride or any other insulation inorganic material and metal.Formation pass back end layers at least one through contact TC, it provides the conduction from the terminal of IC to the lip-deep contact mat at back end layers BL top to connect.Other structures can be the conduction or the insulation, can in back end layers BL, arrange and composition.
The whole block body BB that comprises back end layers and semiconductor or ceramic body SB is configured to define the depression among the semiconductor body SB.The bottom of depression is formed by semiconductor or ceramic material, perhaps by shown in figure, forming from the opposite side sealing of block body or the cover LM of covering depression.
Back plate portion BP is formed by many back end layers BL.Its number can be less than the number of the back end layers in the part on plate portion next door, back to cause the less thickness of back plate portion.The degree of depth of the depression of first in the top surface of back end layers can be abideed by the number of abridged layer in the plate portion of back.
In the plate portion BP of back, be furnished with back plate hole VH, it makes the depression of second in the semiconductor body be connected with the free space of plate portion top, back.In the plate portion of back, be furnished with at least one conductive layer CL, near its insulating barrier that still passes through of top surface that preferably is positioned at the back plate is isolated on the surface of back plate portion relatively.Conducting shell CL forms the electrode of microphone and preferably through being connected to the IC among the semiconductor body SB like conductor lines and each electrical connection through contact TC.
Formed back volume BV between the depression in back end layers BL, back plate BP, semiconductor body SB, and the back volume can be sealed in its bottom by cover LM.
The film MM of cutting is fixed to back end layers BL top, makes the flat components PM of film MM be arranged in the top still away from the back plate portion.Film fixes to lip-deep each metal gasket of back end layers through joint cantilever pad SP.The balanced air vent of differential static pressure between the atmosphere after the film MM that in as directed microphone, works preferably includes and is used to make above volume BV and the flat components PM.But this opening can be omitted, and makes that film ventilates by carrying out in the zone of seat structure supporting therein.
Fig. 4 shows and is used for fixing metal forming during cutting, and after cutting, the film that cuts is transferred to the vertical view of the crosshead HF of the wafer that wherein is pre-formed a plurality of MEMS devices.Crosshead HF comprises a plurality of opening OP, and each opening has the diameter than film somewhat larger in diameter.The diameter of opening can be from 1 to 3 mm.
Metal forming MF can for example under the help of adhesive, be fixed to crosshead HF releasedly at fixing point FP place through engaging.When under help for example, metal forming being fixed to crosshead, can accomplish the cut of metal forming at adhesive.If structure coupling hole or depression then are convenient to the aligning of film to block body through alignment protrusion FP in block body BB.
Fig. 5 shows and passes the schematic cross-section that is designed to as the micro mechanical device of switch.Here again, the MSMS device comprises block body BB and film, and the flat components PM of film has been shown among the figure.Flat components PM is through being fixed to the lip-deep anchor device AN that is arranged in block body BB by the spring element SE that cantilever (referring to for example Fig. 2) forms.In block body BB, use one or more conducting shells to form back plate BP, the bottom of plate BP or the terminal T2 on the top surface after it is electrically connected to and is arranged in.Flat components PM is connected to any position that is arranged in device, preferably is arranged in the another terminal T1 at anchor device AN top or block body BB top.Preferably, conducting shell CL and flat components PM through each contact wire with through contact, are electrically connected to same lip-deep each contact area of block body BB respectively.Flat components PM and conducting shell CL form two electrodes that can apply voltage to it.
Electrostatic force can bring out mobile and so the moving towards conducting shell CL of flexible fixed plane parts PM towards the surface of block body.When flat components PM when block body BB moves; Therefore lip-deep each contact point CP2 of each contact point CP1 on the flat components and block body becomes and contacts, and comes close switch through electrical connection between lip-deep another contact point CP2 that flat components PM and block body BB are provided and the 3rd terminal T3 that is connected to contact point CP2.
Among unshowned another embodiment, the contact point CP1 on the basal surface of flat components PM can isolate with the flat components electricity in Fig. 5, but is electrically connected to the surface of (not shown) block body or each contact mat on the anchor device AN.
Fig. 6 shows another embodiment of the film MM with the cantilever SA that comprises straight part and sweep.The number of cantilever is not limited to three and also can be higher or lower.
MEMS device according to the present invention is not limited to any embodiment shown in the accompanying drawing or that combine accompanying drawing to describe.Device of the present invention can depart from described embodiment on practical structures or actual size.Except the film of cutting, micro mechanical device can be any device of knowing from prior art, means that the structure except film can be identical with the structure in the known device.The present invention is made up to cause above-mentioned advantage to be formed by the film that makes micro mechanical structure and cutting.
Term and reference numerals list
The AM anchor device
The BB block body
The BL back end layers
Plate behind the BP
Volume behind the BV
The CL conducting shell
The CP contact point
The FP alignment protrusion
The HF crosshead
The IC integrated circuit
MCP symphysis contact
The MM film
The OP opening
The PM flat components
The SA cantilever
The SB semiconductor body
SP cantilever pad
The T1-T3 terminal
TC passes through contact
The TL terminal line
Plate hole behind the VH.
Claims (13)
1. MEMS device comprises the block body (BB) of microcomputer processing and is fixed to the film (MM) of said block body, it is characterized in that, joins said block body to from the smooth said film of sheet metal cut and with said film.
2. device according to claim 1,
Wherein said film (MM) comprises flat components (PM) and from the cantilever (SA) of said flat components horizontal expansion, said cantilever ends at the cantilever pad (SP) that joins said block body (BB) to.
3. according to each described device in the aforementioned claim, comprise
-have or do not have the semiconductor or a ceramic body (SB) of the integrated circuit (IC) that is integrated in wherein,
-being deposited on piling up of back end layers (BL) above the said semiconductor body, said block body is formed by said back end layers and said semiconductor body,
-conduction rear electrode (CL), its be one of said back end layers and with said film positioned opposite;
Wherein said integrated circuit is electrically connected to said rear electrode and is electrically connected to said film through each that passes said back end layers through contact (TC).
4. according to each described device in the aforementioned claim, further comprise:
In the top surface that piles up of-said back end layers (BL) first depression, said film (MM) covers said depression;
-with the said first said semiconductor body (SB) aimed at of depression in second depression, said second is recessed to form volume (BV) afterwards; And
-microcomputer processing back plate hole (HV), it is directed passing said back end layers and said back volume is connected with the volume of plate top, said back.
5. one kind is used to make and utilizes film to carry out the method for the MEMS device of work, and said method comprises step:
-metal forming is provided
The said paper tinsel of-cut is to produce smooth film (MM)
-be provided for the block body (BB) of the microcomputer processing of said device
-said film is transferred to said block body and said film is fixed to said block body.
6. method according to claim 5, wherein
Described fixing step comprises the ultrasonic contact mat that joins on the top surface that is arranged in said block body (BB) of said film (MM).
7. according to claim 5 or 6 described methods, wherein
-before cutting, crosshead (HF) is fixed and be restricted to said paper tinsel
-, accomplishes by said paper tinsel said cutting when being fixed to said crosshead
-under the help of said crosshead, said film (MM) is transferred to said block body (BB)
-said film is fixed to said block body
-discharge said crosshead and cut said film thus and said film is separated with any remaining paper tinsel of a part that does not become said film from said film.
8. according to claim 6 or 7 described methods,
Wherein said crosshead (HF) comprises the plate like the hard material of glass or metal, and said plate has the array of opening (OP), and each opening is provided for the area of a film.
9. according to each described method in the claim 6 to 8, the spot diameter of the lip-deep 1-50 μ m that focuses in said metal forming of laser wherein.
10. according to each described method in the claim 6 to 9, wherein use the metal forming of thickness with 1-50 μ m.
11., be designed to as mini microphone with integrated IC according to each described device in the claim 1 to 4.
12., be designed to as adjustable condenser according to each described device in the claim 1 to 4.
13., be designed to as switch according to each described device in the claim 1 to 4.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2010/055474 WO2011131249A1 (en) | 2010-04-23 | 2010-04-23 | Mems device having a membrane and method of manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102834347A true CN102834347A (en) | 2012-12-19 |
| CN102834347B CN102834347B (en) | 2015-12-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201080066397.4A Active CN102834347B (en) | 2010-04-23 | 2010-04-23 | There is MEMS and the manufacture method of film |
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| Country | Link |
|---|---|
| KR (1) | KR101703379B1 (en) |
| CN (1) | CN102834347B (en) |
| WO (1) | WO2011131249A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107128868A (en) * | 2016-02-26 | 2017-09-05 | 英飞凌科技股份有限公司 | The method of MEMS and manufacture MEMS |
| CN107128870A (en) * | 2016-02-26 | 2017-09-05 | 英飞凌科技股份有限公司 | Micro electro mechanical device and the method for forming micro electro mechanical device |
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| WO2008072163A2 (en) * | 2006-12-12 | 2008-06-19 | Nxp B.V. | Mems device with controlled electrode off-state position |
| KR20080093766A (en) * | 2007-04-18 | 2008-10-22 | 한국과학기술원 | Micro electro mechanical systems actuator and various applicable device using thereof |
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| CN107128868A (en) * | 2016-02-26 | 2017-09-05 | 英飞凌科技股份有限公司 | The method of MEMS and manufacture MEMS |
| CN107128870A (en) * | 2016-02-26 | 2017-09-05 | 英飞凌科技股份有限公司 | Micro electro mechanical device and the method for forming micro electro mechanical device |
| CN107128870B (en) * | 2016-02-26 | 2020-08-21 | 英飞凌科技股份有限公司 | Microelectromechanical device and method for forming a microelectromechanical device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102834347B (en) | 2015-12-02 |
| KR20130092995A (en) | 2013-08-21 |
| WO2011131249A1 (en) | 2011-10-27 |
| KR101703379B1 (en) | 2017-03-02 |
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