CN102903624A - Temperature-controlled semiconductor processing device - Google Patents
Temperature-controlled semiconductor processing device Download PDFInfo
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- CN102903624A CN102903624A CN2011102157456A CN201110215745A CN102903624A CN 102903624 A CN102903624 A CN 102903624A CN 2011102157456 A CN2011102157456 A CN 2011102157456A CN 201110215745 A CN201110215745 A CN 201110215745A CN 102903624 A CN102903624 A CN 102903624A
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Abstract
The invention discloses a temperature-controlled semiconductor processing device. The temperature-controlled semiconductor processing device comprises a microcavity part for containing and processing a semiconductor wafer. The semiconductor wafer is loaded in an inner cavity of the microcavity part. A gap allowing processing fluid to flow is formed between the semiconductor wafer and the inner wall of the cavity. The microcavity part further comprises at least one inlet allowing the processing fluid to flow into the cavity and at least one outlet allowing the processing fluid to flow out of the cavity. The microcavity part further comprises temperature control modules disposed in the peripheral areas of the cavity. Compared with the prior art, the temperature-controlled semiconductor processing device attains multi-point temperature control for different areas of the cavity so as to regulate chemical reaction rates of the different inner areas of the cavity by arranging the temperature control modules in the different peripheral areas of the cavity.
Description
[technical field]
The present invention relates to the field of surface treatment of semiconductor crystal wafer or similar workpiece, particularly a kind of for the chemical treatment semiconductor wafer surface, and the device of cleaning, etching and other processing.
[background technology]
Wafer is the carrier of producing used in integrated circuits.The wafer that needs to prepare in actual production has surface smooth, super cleaning, and can be divided into two kinds for the preparation of the existing method of super clean wafer surface: such as the wet treatment process of submergence and spraying technique, and such as the dry process process based on chemical gaseous phase and plasma technology.Wherein wet treatment process is that prior art adopts comparatively widely method, and the wet treatment process generally includes a succession of steps such as adopting suitable chemical solution submergence semiconductor crystal wafer or injection semiconductor crystal wafer and forms.
Comprise a kind of device that adopts the wet treatment process wafer to be surpassed clean in the prior art.Be formed with a micro chamber section that can closely receive and process semiconductor crystal wafer in this device, this micro chamber section can be in open mode for loading and removing semiconductor crystal wafer, also can be in closed condition to be used for the processing of semiconductor crystal wafer, wherein chemicals and other fluid can be introduced the cavity that forms in the described micro chamber section in the processing procedure.Described open mode and closed condition drive respectively upper and lower two working surfaces the relatively moving vertically that consists of described micro chamber by two drive units that comprise in this device and realize.
Find in actual use, the client has following demand when utilizing chemicals that semiconductor crystal wafer is processed: first, demand in time angle adjusted processing speed, also be to need chemicals that the processing speed of semiconductor crystal wafer is slowed down in some situation, and needing chemicals that the processing speed of semiconductor crystal wafer is accelerated in the other situation, existing apparatus only flows into by the control chemicals and the flow rate that flows out described micro chamber cavities obtains chemicals and can not satisfy this demand fully to the adjusting of the processing speed of semiconductor crystal wafer; Second, demand in space angle adjusted processing speed, cause a kind of reason of this demand to be: chemicals enters the internal cavities of described micro chamber section usually from an aperture, then flows along the space between the cavity inner wall of semiconductor crystal wafer and described micro chamber section.Because the carrying out along with chemical reaction, the concentration of chemicals can be thinning gradually, thereby caused in the semiconductor crystal wafer subregion reaction speed near the chemicals entrance very fast, then reaction speed is slower away from the subregion of chemicals entrance, also is that the final surface treatment effect that obtains of semiconductor crystal wafer is inhomogeneous.Cause another reason of this demand to be: in some situation, the client has a mind to make the surface of described semiconductor crystal wafer to obtain inhomogeneous processing, when semiconductor crystal wafer is carried out etch processes, need to be to the local etching effect of semiconductor crystal wafer different from other zone etc.And existing apparatus also fails to satisfy this class demand of client.
Therefore be necessary to provide a kind of new solution to solve the problems referred to above.
[summary of the invention]
The object of the present invention is to provide a kind of temperature control semiconductor processing device, described temperature control semiconductor processing device has the temperature control mechanism for micro chamber section zones of different, can adopt identical or different temperature control strategies by a plurality of zones to described micro chamber section, regulate in the regional of described micro chamber section chemicals to the processing speed of semiconductor crystal wafer.
According to purpose of the present invention, the invention provides a kind of temperature control semiconductor processing device, described temperature control semiconductor processing device comprises one for the micro chamber section that holds and process semiconductor crystal wafer, semiconductor crystal wafer is loaded in the cavity that forms in the described micro chamber section, and be formed with between the inwall of semiconductor crystal wafer and described cavity for the space of processing Fluid Flow in A, comprise also in the described micro chamber section that at least one enters entrance of described cavity and at least one for the outlet of processing the described cavity of fluid expulsion for processing fluid, described micro chamber section also includes the temperature control modules of the outer peripheral areas that is arranged at described cavity.
Further, described temperature control modules is a tortuous microchannel that is formed in the described micro chamber section, described tortuous microchannel comprise some end to end and be parallel to the microchannel of described cavity inner wall, also comprise heat conduction medium entrance and the outlet of heat conduction medium corresponding to described tortuous microchannel in the described micro chamber section.
Further, described temperature control modules is some the microchannels that are parallel to described cavity inner wall that are formed in the described micro chamber section, also comprises some to heat conduction medium entrance and the outlet of heat conduction medium corresponding to every microchannel in the described micro chamber section.
Further, described temperature control modules is a tortuous microchannel that is formed in the described micro chamber section, described tortuous microchannel extends to form along zigzag path, described zigzag path comprises at least one path of therefrom extending around the mind-set, and described center is corresponding to described entrance for processing fluid and enter described cavity.
Further, described zigzag path is that a helical path or two are along described centrosymmetric helical path.
Further, described helical is Archimedes spiral or fermat spiral.
Further, described tortuous microchannel is two tubular conduits arranged side by side, and wherein the adjacent heat conduction medium with another tubular conduit of the heat conduction medium entrance of a tubular conduit exports.
Further, described temperature control modules comprises several temperature control units, and each temperature control unit is corresponding to the different outer peripheral areas of described cavity.
Further, described temperature control unit is arranged at resistance heating unit or the fluid temperature conditioning unit in the described micro chamber section, and described fluid temperature conditioning unit comprises a reservoir and is communicated with heat conduction medium entrance and the outlet of heat conduction medium of described reservoir.
Further, described temperature control semiconductor processing device also comprises heat conduction medium feeding mechanism and heat conduction medium gathering-device, described heat conduction medium feeding mechanism, be connected in described heat conduction medium entrance, be used for providing the heat conduction medium, and described heat conduction medium gathering-device, be connected in described heat conduction medium outlet, be used for to collect the heat conduction medium behind the described microchannel of flowing through
Wherein, described heat conduction medium comprises and adds hot fluid and cryogenic fluid, also comprises at least one adjuster valve in the described heat conduction medium feeding mechanism, and described adjuster valve is used for controlling the flow rate that described heat conduction medium enters described microchannel.
Compared with prior art, the temperature control semiconductor processing device among the present invention comprises following advantage:
The first, by the mode of several temperature control modules is set in the different outer peripheral areas of described cavity, obtain the multi-point temp control for described cavity zones of different, thereby obtained the adjusting to the chemical reaction rate of zones of different in the described cavity;
The second, described temperature control modules can arrange the microchannel of flowing for the heat conduction medium and realize in described micro chamber section, utilizes to add hot fluid and cryogenic fluid is comparatively soft to the process of chemicals heating or refrigeration;
The 3rd, by to form described tortuous microchannel with respect to the zigzag path centered by the chemicals entrance, the reaction rate difference that can adopt the temperature of the spontaneous different gradients of heat conduction medium of the described tortuous microchannel of flowing through to control the chemicals to the variable concentrations gradient to cause compensates;
The 4th, employing is the tortuous microchannel of double tubular passage arranged side by side and two strands of opposite course add flowing of hot fluid or cryogenic fluid, can obtain the gradient temperature control of better controllability.
[description of drawings]
In conjunction with reaching with reference to the accompanying drawings ensuing detailed description, the present invention will be more readily understood, structure member corresponding to same Reference numeral wherein, wherein:
Fig. 1 is the micro chamber section schematic perspective view in one embodiment among the present invention;
Fig. 2 is the lower chambers section cut-away illustration in one embodiment among the present invention;
Fig. 3 is the lower chambers section cut-away illustration in another embodiment among the present invention;
Fig. 4 is section of the upper chamber cut-away illustration in one embodiment among the present invention;
Fig. 5 is the lower chambers section cut-away illustration in one embodiment among the present invention;
Fig. 6 is the double tubular passage schematic appearance in one embodiment among the present invention;
Fig. 7 is the lower chambers section perspective diagram in one embodiment among the present invention;
Fig. 8 is the fluid temperature conditioning unit schematic appearance in one embodiment among the present invention;
Fig. 9 is the schematic perspective view of the semiconductor processing device among the present invention when in the closed position in one embodiment; With
Figure 10 is the schematic perspective view of the semiconductor processing device among the present invention when being shown in an open position in one embodiment.
[embodiment]
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
For convenience of description the present invention at first describes the micro chamber section of one of core component as described temperature control semiconductor processing device.Form a cavity that is used for holding and processing semiconductor crystal wafer in the described micro chamber section.
Please refer to Fig. 1, it shows the schematic perspective view of micro chamber section in an embodiment 100 among the present invention.Described micro chamber section 100 comprises section of upper chamber 120 and lower chambers section 140, form upper chamber's inwall and upper periphery part in the section of described upper chamber 120, form chamber inner wall 142 and following peripheral part 144 in the described lower chambers section 140, described upper chamber inwall, upper periphery part, following peripheral part 144 and lower chambers inwall 142 surround into a cavity that is used for holding and processing semiconductor crystal wafer.Section of described upper chamber 120 and described lower chambers section 140 can be by mechanical structures such as column, slide rail or flip-up style structure effect or guiding is lower changes between an off-position and an open position.When being shown in an open position, section of described upper chamber 120 and described lower chambers section 140 are disconnected from each other so that load and remove will be processed or processed semiconductor crystal wafer in described cavity; When in the closed position, section of described upper chamber 120 and described lower chambers section 140 correspondences fit tightly, and described upper chamber inwall, upper periphery part, following peripheral part 144 and lower chambers inwall 142 surround into described cavity.In semiconductor crystal wafer is loaded into described cavity, and when described cavity is in the closed position, chemical reagent and other fluids can be introduced described cavity with the semiconductor crystal wafer in it is analyzed, cleaning, etching and other processing, and in processing procedure and after being disposed, described chemical reagent and other fluid after processing are drawn described cavity.In order to control further the processing speed of described chemicals and the described semiconductor die bowlder of other fluid treatment, as one of Focal point and difficult point of the present invention, described semiconductor processing device also is provided with temperature control modules in described micro chamber section." described micro chamber section in " includes the top position that is arranged in described upper chamber inwall in the section of upper chamber or is positioned at the lower position of described lower chambers inwall in described lower chambers section.So that described temperature control modules can be covered in the different outer peripheral areas of described cavity, also be that chemicals that described temperature control modules can flow to the inwall of described cavity and in described cavity comes the subregion to heat or freeze, final realization utilize temperature control to chemical reaction rate in time with the space on adjusting.
Please refer to Fig. 2, it shows the cut-away illustration of lower chambers section 140 in another embodiment 200 among the present invention.Described lower chambers section 200 comprises infrabasal plate section 202 and extends upward the circular lower chambers inwall that forms from described infrabasal plate section 202, and the edge of described circular lower chambers inwall also extends upward the lower flange that forms, and described lower flange has formed the following peripheral part.Heating or refrigeration for the chemicals that obtains to flow to the inwall of described cavity and in described cavity, also include temperature control modules in the described infrabasal plate section 202, described temperature control modules is the tortuous microchannel 204 of flowing for the heat conduction medium that forms in described lower chambers section 202, and described tortuous microchannel 204 comprises some microchannels end to end and parallel to each other.Can say that also described tortuous microchannel 204 comprises the parallel microchannels with uniform distances that many head and the tail join successively.Plane, 204 place, described tortuous microchannel also is that diagrammatic cross section is parallel with described lower chambers inwall.The heat conduction medium entrance of described tortuous microchannel 204 is arranged at the first marginal position 22 of described infrabasal plate section 202; The outlet of the heat conduction medium of described tortuous microchannel 204 is arranged at the second marginal position 24 of described infrabasal plate section 202.
When the temperature control semiconductor processing device that comprises described lower chambers section 200 in use is processed semiconductor crystal wafer, can be according to actual needs the heat conduction medium of uniform temperature be injected described lower chambers section 200 from described heat conduction medium entrance 22, then described heat conduction medium described tortuous microchannel 204 is interior fully finish heat exchange after, from described heat conduction medium outlet 24, flow out again.Because described tortuous microchannel 204 has covered most of zone of described lower chambers inwall substantially, thereby can produce to the chemicals that flows between described lower chambers inwall and described lower chambers inwall and the semiconductor crystal wafer effect of heating or refrigeration, also namely accelerate or the reaction rate of slowed down chemicals and semiconductor wafer surface.But should recognize, because the continuous generation of described heat conduction medium heat exchange in the interior mobile process in described tortuous microchannel 204, the heating that the regional of described lower chambers inwall is subject to or refrigeration are in fact also inhomogeneous, also are that heating or the refrigeration of close described heat conduction medium entrance is better than close described heat conduction medium outlet.
In view of needing among some embodiment described cavity is obtained uniform heating effect, please continue with reference to figure 3, it shows the cut-away illustration of lower chambers section 140 in another embodiment 300 among the present invention.Described lower chambers section 300 comprises infrabasal plate section 302 and extends upward the circular lower chambers inwall that forms from described infrabasal plate section 302, and the edge of described circular lower chambers inwall also extends upward the lower flange that forms, and described lower flange has formed the following peripheral part.In order to obtain uniform heating or the refrigeration to described cavity, also include temperature control modules in the described infrabasal plate section 302, described temperature control modules in described lower chambers section 302, form some for heat conduction medium microchannels 304 that flow, that be parallel to described lower chambers inwall.In the present embodiment, parallel to each other between described some the microchannels 304.And also all be formed with a pair of heat conduction medium entrance 32 and heat conduction medium outlet 34 corresponding to each bar microchannel 304 in the described lower chambers section 300.That is to say, in a microchannel 304, carry out whether filling heat-conductive medium or inject the mutual independence of which kind of heat conduction medium and mutually noninterfere of the operation of filling heat-conductive medium and other microchannel 304.When so the temperature control semiconductor processing device that comprises described lower chambers section 300 in use is processed semiconductor crystal wafer, obtain the lower chambers inwall is heated uniformly if wish, the identical heat conduction medium of uniform temp can be injected each bar microchannel 304 from described heat conduction medium entrance 32, but the heat conduction media flow in every microchannel 304 to adjacent microchannel 304 in the heat conduction media flow to opposite.At this moment, owing to heating or the inhomogeneous effect of freezing of adjacent microchannel are cancelled each other, so with respect to whole lower chambers inwall, the heating of acquisition or refrigeration are comparatively even.
In sum, the factors such as diameter of flow velocity, kind (such as water, gas) and described microchannel by control heat conduction medium, heating or the refrigeration that can adopt rational structure and adopt suitable strategy to come inwall and the chemicals between described inwall and the semiconductor crystal wafer to described cavity to carry out Expected Results for different time, reaction rate by described heating or refrigeration further can be regulated the chemical treatment semiconductor crystal wafer can satisfy client's adjustment demand to described processing speed on the time angle better.Although Fig. 2 and the lower chambers section that all adopts embodiment illustrated in fig. 3 be as embodiment, those skilled in the art can to the similar embodiment of section of relevant upper chamber or whole micro chamber section think easily and, so this paper is not tired stating one by one.
All many-sides of the present invention for convenience of description please focus on following demand: because chemicals enters in the described micro chamber section from an aperture usually, then mobile along the space between the cavity inner wall of semiconductor crystal wafer and described micro chamber section.Because along with the carrying out of chemical reaction, the concentration of chemicals can be thinning gradually, the change in concentration of this chemicals can be characterized by a kind of along described chemicals entrance be to around radioactive gradient concentration change.Also be that reaction speed is very fast because the concentration of chemicals is higher near the subregion of chemicals entrance in the semiconductor crystal wafer, then reaction speed is slower because the concentration of chemicals is lower away from the subregion of chemicals entrance, has caused the final surface treatment effect that obtains of semiconductor crystal wafer inhomogeneous.In order to obtain the uniform treatment effect to semiconductor wafer surface, the treatment effeciency that the change in concentration that can adopt certain gradient temperature to control to compensate described chemicals causes changes.And the variation starting point of this gradient temperature control can enter for described chemicals the entrance of described micro chamber section.In order to reach this purpose, described temperature control modules can be for being formed at a tortuous microchannel in the described micro chamber section, described tortuous microchannel extends to form along zigzag path, and described zigzag path is the path of therefrom extending around the mind-set, and described center is corresponding to described chemicals entrance.
Please refer to Fig. 4, it shows the biopsy cavity marker devices schematic diagram of section of upper chamber 120 in an embodiment 400 among the present invention.In this embodiment, described chemicals entrance is an aperture (not shown) that is formed at the center of section of described upper chamber.Section of described upper chamber 400 comprises upper substrate section 402 and extends upward the circular upper chamber inwall 404 that forms from described upper substrate section 402, the edge of described circular upper chamber inwall 404 also extends upward the upper flange 406 that forms, and described upper flange 406 has formed the upper periphery part.Also include temperature control modules in the described upper substrate section 402, described temperature control control module is the tortuous microchannel 408 of flowing for the heat conduction medium that is formed in the described upper substrate section 402, described tortuous microchannel 408 extends to form along a helical path, and it is parallel with described upper chamber inwall 404 that plane, place, described helical path also is diagrammatic cross section.Obviously, described helical path is a zigzag path that extends around the mind-set centered by described chemicals entrance and from described.An opening of described tortuous microchannel 408 is arranged at the nearly middle position (not shown) in the back side of described upper substrate section 402, can be used as the outlet of heat conduction medium; Another opening of described microchannel 408 is arranged at the marginal position 409 of described upper substrate section 402, can be used as heat conduction medium entrance.
By said structure, when utilizing chemicals that semiconductor crystal wafer is processed, the hot fluid that adds such as hot water of suitable temperature can be injected from the heat conduction medium entrance of described tortuous microchannel 408, and flowed out by the heat conduction medium outlet of described tortuous microchannel 408.Because the described hot fluid that adds is better than heating effect to the middle position of described upper chamber inwall to the heating effect of position around the described upper chamber inwall, also be that the described heating effect that adds hot fluid successively decreases in gradient to center direction around upper chamber's inwall, and the concentration of chemicals is to successively decrease in gradient around the mediad of upper chamber's inwall, if these two graded can be cancelled each other on the impact that chemical reaction rate causes, in other words in the regional for described upper chamber inwall, the chemical reaction rate increase that is caused by heating can be cancelled each other with being slowed down by the thinning chemical reaction rate that causes of chemicals concentration, then can make the semiconductor wafer surface chemical reaction rate everywhere towards upper chamber's inwall keep identical even in other words.
In certain embodiments, if the change in concentration gradient of chemicals is comparatively even, then equidistantly comparatively uniform helical of Archimedes spiral and fermat spiral can be adopted in described helical path.Should also be noted that, if the tortuous microchannel of adopting a helical path to generate, the range of temperature that its inner heat conduction medium produces of flowing through so can only be finely tuned by the flow velocity of described heat conduction medium, when the flow velocity of described heat conduction medium in tortuous microchannel was fast, the temperature difference of heat conduction medium between described heat conduction medium entrance and the outlet of heat conduction medium was less; When the flow velocity of described heat conduction medium in tortuous microchannel was slow, the temperature difference of heat conduction medium between described heat conduction medium entrance and the outlet of heat conduction medium was larger.However, the amplitude of accommodation that produces by the flow velocity of regulating described heat conduction medium still can not satisfy the demand in some application.
Please continue with reference to figure 5, it shows the generalized section of lower chambers section 140 in an embodiment 500 among the present invention.Described lower chambers section 500 comprises infrabasal plate section 502 and extends upward the circular lower chambers inwall that forms from described infrabasal plate section 502, and the edge of described circular lower chambers inwall also extends upward the lower flange that forms, and described lower flange has formed the following peripheral part.Also be formed with the first microchannel 504 and second microchannel 506 of flowing for the heat conduction medium in the described infrabasal plate section 502, described microchannel extends to form along the bipitch path, and plane, place, described bipitch path also is that diagrammatic cross section is parallel with described lower chambers inwall.Described bipitch path comprise the first helical path and with centrosymmetric the second helical path, described the first helical path.Wherein, an opening of the first microchannel 504 that extend to generate along the first helical path is arranged at the back side middle position 51 of described infrabasal plate section 502, can be used as heat conduction medium entrance, another opening of the first microchannel 504 that extend to generate along the first helical path is arranged at the first marginal position 52 of described infrabasal plate section 502, can be used as the outlet of heat conduction medium; An opening of the second microchannel 506 that extend to generate along the second helical path is arranged at the back side middle position 51 of described infrabasal plate section 502 equally, but be used as the outlet of heat conduction medium, another opening of the second microchannel 506 that extend to generate along the second helical path is arranged at the second marginal position 53 of described infrabasal plate section 502, can be used as heat conduction medium entrance.
One of characteristics of said structure are: the first helical path and described the second helical path are the Central Symmetry patterns, so that in fact the first microchannel 504 and the second microchannel 506 are to intersect to exist in described infrabasal plate section 502.Two of the characteristics of said structure are: the heat conduction medium is being to flow around mediad in the first microchannel 504 that generates along described the first helical path, in the second microchannel 506 that generates along described the second helical path from around to central flows.And by said structure, can adopt at the first microchannel 504 interior injection cryogenic fluids, and in the mode of described the second microchannel 506 interior injection heating fluids, can obtain for described lower chambers inwall the temperature difference by a relatively large margin of position around therefrom heart position is pointed to.With respect to embodiment illustrated in fig. 4, present embodiment can obtain more to hold manageable gradient temperature by a larger margin and regulate.Those skilled in the art can think and arrive, the flow direction of the heat-conducting fluid in the present embodiment, speed and temperature can be carried out certain control and change according to different needs, such as in described the first microchannel 504 and the heat-conducting fluid of the second microchannel 506 interior can all flow same temperature, same types, and in described the first microchannel 504 and the flow directions in the second microchannel 506 can all be from around to central flows etc., might not stick to this paper and describe.
Certainly, if described tortuous microchannel is not when adopting double-screw path to generate, can also realize by other execution mode the technique effect of similar Fig. 5, such as can with the tortuous microchannel in embodiment illustrated in fig. 4, being revised as double tubular passage arranged side by side from only having one tubular conduit.Give this two femoral canals shape passage by utilizing rightabout to inject different heat conduction media, can realize foregoing invention thought equally.Described tortuous microchannel is that the structural representation of double tubular passage arranged side by side can be with reference to figure 6.
In sum, by to form described tortuous microchannel with respect to the zigzag path centered by the chemicals entrance, the reaction rate difference that the temperature that can adopt the heat conduction medium of the described tortuous microchannel of flowing through to produce different gradients controls the chemicals to the variable concentrations gradient to cause compensates in described micro chamber section.If employing is the tortuous microchannel of double tubular passage arranged side by side and two strands of opposite course add flowing of hot fluid or cryogenic fluid, can also obtain the gradient temperature control of better controllability.By technique scheme, can satisfy to a certain extent client's adjustment demand to processing speed on space angle.But in some application scenarios, the client wishes that also the processing speed that can the arbitrary assigned address on space angle obtains to expect regulates.
, please continue with reference to figure 7, it shows the perspective diagram of lower chambers section 140 in an embodiment 700 among the present invention for this reason.Described lower chambers section 700 comprises infrabasal plate section 702 and extends upward the circular lower chambers inwall that forms from described infrabasal plate section 702, and the edge of described circular lower chambers inwall also extends upward the formation lower flange, and described lower flange has formed the following peripheral part.Also include temperature control modules in the described infrabasal plate section 702, described temperature control modules comprises several temperature control units 704, described several temperature control units 704 are intensive evenly to be arranged in the described lower chambers section 700, each temperature control unit 704 is corresponding to the zones of different of described lower chambers inwall, and the control of the temperature of each temperature control unit 704 is independent mutually.In one embodiment, described temperature control unit 704 can be miniature resistance heating unit.Described miniature resistance heating unit adopts the principle of resistance heating power to heat.In further embodiments, described temperature control unit 704 can be the fluid temperature conditioning unit, the structure of described fluid temperature conditioning unit can be with reference to shown in Figure 8, described fluid temperature conditioning unit 800 comprises a reservoir 820 and is communicated with heat conduction medium entrance 840 and the heat conduction medium outlet 860 of described reservoir 820 that described heat conduction medium entrance 840 and heat conduction medium outlet 860 can be the thinner plastic flexible pipes of diameter.Obviously, when the temperature control semiconductor processing device that comprises described lower chambers section 700 in use is processed semiconductor crystal wafer, can obtain for assigned address the temperature control effect of expectation, thereby obtain comparatively desirable processing speed regulating effect.
In addition, described temperature control semiconductor processing device can also comprise heat conduction medium feeding mechanism and heat conduction medium gathering-device, and described heat conduction medium feeding mechanism can be connected in described heat conduction medium entrance, is used for providing the heat conduction medium.Described heat conduction medium gathering-device can be connected in described heat conduction medium outlet, be used for to collect the heat conduction medium behind flow through described tortuous microchannel or the fluid temperature conditioning unit, wherein, described heat conduction medium comprises and adds hot fluid and cryogenic fluid that described fluid can be liquid or gas.Described heat conduction medium feeding mechanism can also comprise at least one adjuster valve, and described adjuster valve is used for controlling the flow rate that described heat conduction medium enters described tortuous microchannel or fluid temperature conditioning unit, with the better adjustment effect of further acquisition.
Preamble mainly focuses on the associated description of described micro chamber section, but will be appreciated that, described micro chamber section also may be other structure and shape, described micro chamber section is not limited to this structural type of section of upper chamber and lower chambers section, as long as can form the cavity that holds described semiconductor crystal wafer.Even if but described micro chamber employing section of upper chamber of section and this structural type of lower chambers section, described temperature control semiconductor processing device also not only comprises this critical piece of micro chamber section, orders about section of described upper chamber and lower chambers section in the corresponding mechanical structure of off-position and open position Transforms, also should comprise corresponding chemicals generator and thermometer and chemicals analyzer etc. equipment such as also comprising.So in order to describe all many-sides of described temperature control semiconductor processing device, please in conjunction with reference to figure 9 and Figure 10, it shows temperature control semiconductor processing device among the present invention in the closed position and schematic perspective view that is shown in an open position respectively in an embodiment 900.Simply, described temperature control semiconductor processing device 900 comprises a micro chamber for the treatment of semiconductor crystal wafer that is formed by section of upper chamber 920 and lower chambers section 940.Section of described upper chamber 920 links to each other by articulated part 960 with the part edge of described lower chambers section 940.When section of described upper chamber 920 and described lower chambers section 940 are in as shown in figure 10 an open position along described articulated part 960 rotations, so that the lower chambers plate 942 in the upper chamber's plate 922 in the section of described upper chamber 920 and the described lower chambers section 940 is disconnected from each other so that load and remove will be processed or processed semiconductor crystal wafer in described micro chamber; When section of described upper chamber 920 and/or lower chambers section 940 are in as shown in Figure 9 an off-position around described articulated part 960 rotations,, the lower chambers plate 942 in the upper chamber's plate 922 in the section of described upper chamber 920 and the described lower chambers section 940 forms the micro chamber of holding and processing semiconductor crystal wafer so that fitting tightly.When semiconductor crystal wafer is loaded into described micro chamber, and when described micro chamber is in the closed position, chemical reagent and other fluids can be introduced described micro chamber inside with the semiconductor crystal wafer in it is analyzed, cleaning, etching and other processing, and in processing procedure and after being disposed, described chemical reagent and other fluid after processing are drawn described micro chamber.Described upper chamber plate 922 and described lower chambers plate 942 adopt removable design simultaneously, when needs are processed the semiconductor crystal wafer of different size or needed to obtain different heating or refrigeration, can change suitable upper chamber's plate 922 and lower chambers plate 942 and satisfy the demands.
Above-mentioned explanation has fully disclosed the specific embodiment of the present invention.It is pointed out that and be familiar with the scope that any change that the person skilled in art does the specific embodiment of the present invention does not all break away from claims of the present invention.Correspondingly, the scope of claim of the present invention also is not limited only to described embodiment.
Claims (10)
1. temperature control semiconductor processing device is characterized in that it comprises:
One for the micro chamber section that holds and process semiconductor crystal wafer, semiconductor crystal wafer is loaded in the cavity that forms in the described micro chamber section, and be formed with between the inwall of semiconductor crystal wafer and described cavity for the space of processing Fluid Flow in A, fluid enters entrance of described cavity and at least one is for the outlet of processing the described cavity of fluid expulsion for processing also to comprise at least one in the described micro chamber section
Described micro chamber section also includes the temperature control modules of the outer peripheral areas that is arranged at described cavity.
2. temperature control semiconductor processing device according to claim 1, it is characterized in that, described temperature control modules is a tortuous microchannel that is formed in the described micro chamber section, described tortuous microchannel comprise some end to end and be parallel to the microchannel of described cavity inner wall, also comprise heat conduction medium entrance and the outlet of heat conduction medium corresponding to described tortuous microchannel in the described micro chamber section.
3. temperature control semiconductor processing device according to claim 1, it is characterized in that, described temperature control modules is some the microchannels that are parallel to described cavity inner wall that are formed in the described micro chamber section, also comprises some to heat conduction medium entrance and the outlet of heat conduction medium corresponding to every microchannel in the described micro chamber section.
4. temperature control semiconductor processing device according to claim 1, it is characterized in that, described temperature control modules is a tortuous microchannel that is formed in the described micro chamber section, described tortuous microchannel extends to form along zigzag path, described zigzag path comprises at least one path of therefrom extending around the mind-set, and described center is corresponding to described entrance for processing fluid and enter described cavity.
5. temperature control semiconductor processing device according to claim 4 is characterized in that, described zigzag path is that a helical path or two are along described centrosymmetric helical path.
6. temperature control semiconductor processing device according to claim 5 is characterized in that, described helical is Archimedes spiral or fermat spiral.
7. according to claim 4 to 6 arbitrary described temperature control semiconductor processing devices, it is characterized in that described tortuous microchannel is two tubular conduits arranged side by side, wherein the adjacent heat conduction medium with another tubular conduit of the heat conduction medium entrance of a tubular conduit exports.
8. temperature control semiconductor processing device according to claim 1 is characterized in that, described temperature control modules comprises several temperature control units, and each temperature control unit is corresponding to the different outer peripheral areas of described cavity.
9. temperature control semiconductor processing device according to claim 8, it is characterized in that, described temperature control unit is arranged at resistance heating unit or the fluid temperature conditioning unit in the described micro chamber section, and described fluid temperature conditioning unit comprises a reservoir and is communicated with heat conduction medium entrance and the outlet of heat conduction medium of described reservoir.
10. according to claim 2,3,4,5,6 and 9 arbitrary described temperature control semiconductor processing devices, described temperature control semiconductor processing device also comprises heat conduction medium feeding mechanism and heat conduction medium gathering-device,
Described heat conduction medium feeding mechanism is connected in described heat conduction medium entrance, is used for providing the heat conduction medium, and
Described heat conduction medium gathering-device is connected in the outlet of described heat conduction medium, is used for collecting the heat conduction medium behind the described microchannel of flowing through,
Wherein, described heat conduction medium comprises and adds hot fluid and cryogenic fluid, also comprises at least one adjuster valve in the described heat conduction medium feeding mechanism, and described adjuster valve is used for controlling the flow rate that described heat conduction medium enters described microchannel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110215745.6A CN102903624B (en) | 2011-07-29 | 2011-07-29 | Temperature control semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110215745.6A CN102903624B (en) | 2011-07-29 | 2011-07-29 | Temperature control semiconductor processing device |
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| CN104835763A (en) * | 2015-04-27 | 2015-08-12 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc with petal-shaped surface structure |
| CN106091221A (en) * | 2016-06-01 | 2016-11-09 | 苏州格兰斯柯光电科技有限公司 | A kind of fresh-air fan pipeline based on fermat spiral |
| CN107842607A (en) * | 2016-09-21 | 2018-03-27 | 无锡华瑛微电子技术有限公司 | Chemical liquids holding bottle and modularized semiconductor processing equipment |
| JP2019504478A (en) * | 2015-11-25 | 2019-02-14 | 无錫華瑛微電子技術有限公司Ｗｕｘｉ Ｈｕａｙｉｎｇ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ． | Semiconductor processing apparatus and method |
| CN110361938A (en) * | 2018-03-26 | 2019-10-22 | 上海微电子装备（集团）股份有限公司 | A kind of manufacturing method of exposure method and semiconductor devices |
| CN112859275A (en) * | 2021-01-20 | 2021-05-28 | 中国科学院西安光学精密机械研究所 | Cold optics self-adaptation thermal deformation compensation structure based on Archimedes spiral |
| WO2023179195A1 (en) * | 2022-03-23 | 2023-09-28 | 无锡华瑛微电子技术有限公司 | Semiconductor processing device, semiconductor processing system, and semiconductor edge positioning method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104835763A (en) * | 2015-04-27 | 2015-08-12 | 沈阳拓荆科技有限公司 | Temperature-controllable heating disc with petal-shaped surface structure |
| CN104835763B (en) * | 2015-04-27 | 2018-08-14 | 沈阳拓荆科技有限公司 | A kind of controllable temperature heating dish of petal surface texture |
| JP2019504478A (en) * | 2015-11-25 | 2019-02-14 | 无錫華瑛微電子技術有限公司Ｗｕｘｉ Ｈｕａｙｉｎｇ Ｍｉｃｒｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ． | Semiconductor processing apparatus and method |
| CN106091221A (en) * | 2016-06-01 | 2016-11-09 | 苏州格兰斯柯光电科技有限公司 | A kind of fresh-air fan pipeline based on fermat spiral |
| CN106091221B (en) * | 2016-06-01 | 2019-06-07 | 苏州格兰斯柯光电科技有限公司 | A kind of fresh-air fan pipeline based on fermat spiral |
| CN107842607A (en) * | 2016-09-21 | 2018-03-27 | 无锡华瑛微电子技术有限公司 | Chemical liquids holding bottle and modularized semiconductor processing equipment |
| CN110361938A (en) * | 2018-03-26 | 2019-10-22 | 上海微电子装备（集团）股份有限公司 | A kind of manufacturing method of exposure method and semiconductor devices |
| CN112859275A (en) * | 2021-01-20 | 2021-05-28 | 中国科学院西安光学精密机械研究所 | Cold optics self-adaptation thermal deformation compensation structure based on Archimedes spiral |
| WO2023179195A1 (en) * | 2022-03-23 | 2023-09-28 | 无锡华瑛微电子技术有限公司 | Semiconductor processing device, semiconductor processing system, and semiconductor edge positioning method |
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