CN102903624B - Temperature control semiconductor processing device - Google Patents
Temperature control semiconductor processing device Download PDFInfo
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- CN102903624B CN102903624B CN201110215745.6A CN201110215745A CN102903624B CN 102903624 B CN102903624 B CN 102903624B CN 201110215745 A CN201110215745 A CN 201110215745A CN 102903624 B CN102903624 B CN 102903624B
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Abstract
Disclosed herein a kind of temperature control semiconductor processing device, described temperature control semiconductor processing device comprises one for holding and process the micro chamber portion of semiconductor crystal wafer, semiconductor crystal wafer is loaded in the cavity formed in described micro chamber portion, and be formed for processing the space that fluid flows between the inwall of semiconductor crystal wafer and described cavity, at least one enters described cavity entrance and at least one outlet for cavity described in process fluid expulsion for process fluid is also comprised in described micro chamber portion, described micro chamber portion also includes the temperature control modules of the outer peripheral areas being arranged at described cavity.Compared with prior art, the present invention is by arranging the mode of several temperature control modules in the different outer peripheral areas of described cavity, obtain the multi-spots temperature control for described cavity zones of different, thus obtain the adjustment to the chemical reaction rate of zones of different in described cavity.
Description
[technical field]
The present invention relates to the field of surface treatment of semiconductor crystal wafer or similar work piece, particularly one is used for chemical treatment semiconductor wafer surface, and the device of clean, etching and other process.
[background technology]
Wafer is the carrier producing used in integrated circuits.In actual production, need the wafer prepared to have surface that is smooth, ultra-clean, and two kinds can be divided into for the preparation of the existing method of ultra-clean wafer surface: the wet treatment process of such as submergence and spraying technique, and such as based on the dry process process of chemical gaseous phase and plasma technology.Wherein wet treatment process is that prior art adopts method comparatively widely, and wet treatment process generally includes and adopts suitable chemical solution submergence semiconductor crystal wafer or spray the succession of steps compositions such as semiconductor crystal wafer.
Comprise a kind of wet treatment process that adopts in prior art and the device of ultra-clean process is carried out to wafer.Being formed with one in this device can close receipt process the micro chamber portion of semiconductor crystal wafer, this micro chamber portion can be in open mode for loading and removing semiconductor crystal wafer, also the process of closed condition for semiconductor crystal wafer can be in, wherein chemicals and other fluid the cavity formed in described micro chamber portion can be introduced in processing procedure.Described open mode and closed condition drive upper and lower two working surfaces relative movement vertically forming described micro chamber to realize by two drive units comprised in this device respectively.
Find in actual use, client has following demand when utilizing chemicals to process semiconductor crystal wafer: first, the demand of joint processing speed is raised in time angle, also the processing speed of chemicals to semiconductor crystal wafer is namely needed to slow down in some cases, and in other situation, need chemicals to accelerate the processing speed of semiconductor crystal wafer, existing apparatus to flow into and the flow rate that flows out described micro chamber cavities can not meet this demand to obtain chemicals completely to the adjustment of the processing speed of semiconductor crystal wafer by means of only controlling chemicals, second, space angle regulates the demand of processing speed, a kind of reason of this demand is caused to be: chemicals enters the internal cavities in described micro chamber portion usually from an aperture, then along the interstitial flow between semiconductor crystal wafer and the cavity inner wall in described micro chamber portion.Due to the carrying out along with chemical reaction, the concentration of chemicals can be thinning gradually, thus the subregion reaction speed caused near chemistry inlets in semiconductor crystal wafer is very fast, away from the subregion of chemistry inlets, then reaction speed is comparatively slow, and also namely the surface treatment effect that finally obtains of semiconductor crystal wafer is uneven.Another reason of this demand is caused to be: in some cases, client has a mind to make the surface of described semiconductor crystal wafer obtain uneven process, when such as etch processes being carried out to semiconductor crystal wafer, need different from other region etc. to the local etching effect of semiconductor crystal wafer.And existing apparatus also fails to meet this kind of demand of client.
Therefore be necessary to provide a kind of new solution to solve the problems referred to above.
[summary of the invention]
The object of the present invention is to provide a kind of temperature control semiconductor processing device, described temperature control semiconductor processing device has the temperature control mechanism for micro chamber portion zones of different, can by adopting identical or different temperature control strategy to the multiple regions in described micro chamber portion, to regulate in the regional in described micro chamber portion chemicals to the processing speed of semiconductor crystal wafer.
According to object of the present invention, the invention provides a kind of temperature control semiconductor processing device, described temperature control semiconductor processing device comprises one for holding and process the micro chamber portion of semiconductor crystal wafer, semiconductor crystal wafer is loaded in the cavity formed in described micro chamber portion, and be formed for processing the space that fluid flows between the inwall of semiconductor crystal wafer and described cavity, at least one enters described cavity entrance and at least one outlet for cavity described in process fluid expulsion for process fluid is also comprised in described micro chamber portion, described micro chamber portion also includes the temperature control modules of the outer peripheral areas being arranged at described cavity.
Further, described temperature control modules is the tortuous microchannel be formed in described micro chamber portion, described tortuous microchannel comprise some end to end and be parallel to the microchannel of described cavity inner wall, also comprise the heat conduction media input corresponding to described tortuous microchannel and heat conduction media outlet in described micro chamber portion.
Further, described temperature control modules is the microchannel that some of being formed in described micro chamber portion are parallel to described cavity inner wall, also comprises some heat conduction media input and heat conduction media outlet to corresponding to every bar microchannel in described micro chamber portion.
Further, described temperature control modules is the tortuous microchannel be formed in described micro chamber portion, described tortuous microchannel extends to form along zigzag path, described zigzag path comprises at least one from center to the path that surrounding extends, and described center corresponds to the described entrance entering described cavity for process fluid.
Further, described zigzag path is that a helical path or two are along described centrosymmetric helical path.
Further, described helical is Archimedes spiral or fermat spiral.
Further, described tortuous microchannel is two tubular conduits arranged side by side, wherein the adjacent heat conduction media outlet with another tubular conduit of the heat conduction media input of a tubular conduit.
Further, described temperature control modules comprises several temperature control units, and each temperature control unit corresponds to the different outer peripheral areas of described cavity.
Further, described temperature control unit is arranged at electrical resistor heating element in described micro chamber portion or fluid temperature conditioning unit, and described fluid temperature conditioning unit comprises a reservoir and the heat conduction media input and the heat conduction media outlet that are communicated with described reservoir.
Further, described temperature control semiconductor processing device also comprises heat conduction medium feeding mechanism and heat conduction medium gathering-device, described heat conduction medium feeding mechanism, be connected to described heat conduction media input, for providing heat conduction medium, and described heat conduction medium gathering-device, be connected to described heat conduction media outlet, for collecting the heat conduction medium after flowing through described microchannel
Wherein, described heat conduction medium comprises and adds hot fluid and cryogenic fluid, also comprises at least one adjuster valve in described heat conduction medium feeding mechanism, and described adjuster valve enters the flow rate of described microchannel for controlling described heat conduction medium.
Compared with prior art, the temperature control semiconductor processing device in the present invention comprises following advantage:
The first, by arranging the mode of several temperature control modules in the different outer peripheral areas of described cavity, obtain the multi-spots temperature control for described cavity zones of different, thus obtain the adjustment to the chemical reaction rate of zones of different in described cavity;
The second, the microchannel that described temperature control modules can be arranged for the flowing of heat conduction medium in described micro chamber portion realizes, and utilization adds hot fluid and the process of cryogenic fluid to chemicals heating or refrigeration is comparatively soft;
3rd, by to form described tortuous microchannel relative to the zigzag path centered by chemistry inlets, the temperature of the spontaneous different gradient of the heat conduction medium flowing through described tortuous microchannel can be adopted to control to compensate the reaction rate difference that the chemicals of variable concentrations gradient causes;
4th, adopting is the flowing that the tortuous microchannel of double tubular passage arranged side by side and two strands of opposite course add hot fluid or cryogenic fluid, and the gradient temperature that can obtain better controllability controls.
[accompanying drawing explanation]
In conjunction with reference accompanying drawing and ensuing detailed description, the present invention will be easier to understand, the structure member that wherein same Reference numeral is corresponding same, wherein:
Fig. 1 is the micro chamber portion schematic perspective view in one embodiment in the present invention;
Fig. 2 is the lower chambers portion cut-away illustration in one embodiment in the present invention;
Fig. 3 is the lower chambers portion cut-away illustration in another embodiment in the present invention;
Fig. 4 is portion of the upper chamber cut-away illustration in one embodiment in the present invention;
Fig. 5 is the lower chambers portion cut-away illustration in one embodiment in the present invention;
Fig. 6 is the double tubular passage schematic appearance in one embodiment in the present invention;
Fig. 7 is the lower chambers portion perspective diagram in one embodiment in the present invention;
Fig. 8 is the fluid temperature conditioning unit schematic appearance in one embodiment in the present invention;
Fig. 9 be semiconductor processing device in the present invention in the closed position in one embodiment time schematic perspective view; With
Figure 10 be semiconductor processing device in the present invention in an open position in one embodiment time schematic perspective view.
[embodiment]
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, and below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
The present invention for convenience of description, first describes the micro chamber portion of one of the core component as described temperature control semiconductor processing device.One is formed for holding and process the cavity of semiconductor crystal wafer in described micro chamber portion.
Please refer to Fig. 1, it illustrates the schematic perspective view of micro chamber portion in an embodiment 100 in the present invention.Described micro chamber portion 100 comprises portion of upper chamber 120 and lower chambers portion 140, upper chamber's inwall and upper periphery part is formed in portion of described upper chamber 120, form chamber inner wall 142 and lower peripheral portion 144 in described lower chambers portion 140, described upper chamber inwall, upper periphery part, lower peripheral portion 144 and lower chambers inwall 142 surround into one for holding and process the cavity of semiconductor crystal wafer.Portion of described upper chamber 120 and described lower chambers portion 140 can by changing under the effect of the mechanical structures such as such as column, slide rail or flip-up style structure or guiding between an off-position and an open position.When in open position, portion of described upper chamber 120 and described lower chambers portion 140 disconnected from each other so that load and remove that will be processed or processed semiconductor crystal wafer in described cavity; When in closed position, portion of described upper chamber 120 and described lower chambers portion 140 correspondence fit tightly, and described upper chamber inwall, upper periphery part, lower peripheral portion 144 and lower chambers inwall 142 surround into described cavity.When semiconductor crystal wafer is loaded in described cavity, and when described cavity is in the closed position, chemical reagent and other fluids can be introduced described cavity to analyze the semiconductor crystal wafer in it, to clean, to etch and other process, and in processing procedure and after being disposed, the described chemical reagent after process and other fluid are drawn described cavity.In order to control the processing speed of semiconductor die bowlder described in described chemicals and other fluid treatment further, as one of Focal point and difficult point of the present invention, described semiconductor processing device is also provided with temperature control modules in described micro chamber portion." in described micro chamber portion " includes in portion of upper chamber the top position being arranged in described upper chamber inwall or the lower position being positioned at described lower chambers inwall in described lower chambers portion.Make described temperature control modules can be covered in the different outer peripheral areas of described cavity, namely also described temperature control modules can come subregion to the inwall of described cavity and the chemicals flowed in described cavity and heats or freeze, and final realization utilizes temperature control to come chemical reaction rate adjustment in time and spatially.
Please refer to Fig. 2, it illustrates the cut-away illustration of lower chambers portion 140 in another embodiment 200 in the present invention.The circular lower chambers inwall that described lower chambers portion 200 comprises infrabasal plate portion 202 and upwards extends from described infrabasal plate portion 202, the lower flange that the edge of described circular lower chambers inwall also upwards extends, described lower flange defines lower peripheral portion.In order to obtain the inwall of described cavity and the heating of chemicals of flowing in described cavity or refrigeration, also temperature control modules is included in described infrabasal plate portion 202, described temperature control modules is the tortuous microchannel 204 for the flowing of heat conduction medium formed in described lower chambers portion 202, and described tortuous microchannel 204 comprises some microchannels end to end and parallel to each other.Alternatively, described tortuous microchannel 204 comprises the parallel microchannels with uniform distances that many head and the tail connect successively.Also namely diagrammatic cross section is parallel with described lower chambers inwall for place, described tortuous microchannel 204 plane.The heat conduction media input of described tortuous microchannel 204 is arranged at first marginal position 22 in described infrabasal plate portion 202; The heat conduction media outlet of described tortuous microchannel 204 is arranged at second marginal position 24 in described infrabasal plate portion 202.
When using the temperature control semiconductor processing device comprising described lower chambers portion 200 to process semiconductor crystal wafer, according to actual needs the heat conduction medium of uniform temperature can be injected described lower chambers portion 200 from described heat conduction media input 22, then after described heat conduction medium fully completes heat exchange in described tortuous microchannel 204, then flow out from described heat conduction media outlet 24.Because described tortuous microchannel 204 substantially covers most of region of described lower chambers inwall, thus can produce to described lower chambers inwall and the chemicals flowed between described lower chambers inwall and semiconductor crystal wafer the effect heating or freeze, the reaction rate of chemicals and semiconductor wafer surface of also namely accelerating or slowed down.But should recognize, due to the continuous generation of heat exchange in the process that described heat conduction medium flows in described tortuous microchannel 204, namely the heating that the regional of described lower chambers inwall is subject to or refrigeration in fact and uneven, are also better than near described heat conduction media outlet near the heating of described heat conduction media input or refrigeration.
In view of needing to obtain uniform heating effect to described cavity in some embodiment, please continue to refer to Fig. 3, it illustrates the cut-away illustration of lower chambers portion 140 in another embodiment 300 in the present invention.The circular lower chambers inwall that described lower chambers portion 300 comprises infrabasal plate portion 302 and upwards extends from described infrabasal plate portion 302, the lower flange that the edge of described circular lower chambers inwall also upwards extends, described lower flange defines lower peripheral portion.In order to obtain uniform heating to described cavity or refrigeration, also include temperature control modules in described infrabasal plate portion 302, described temperature control modules is the microchannel 304 that some of formation in described lower chambers portion 302 are that supply the flowing of heat conduction medium, to be parallel to described lower chambers inwall.In the present embodiment, parallel to each other between described some microchannels 304.And be also all formed with a pair heat conduction media input 32 and heat conduction media outlet 34 corresponding to each microchannel 304 in described lower chambers portion 300.That is, in a microchannel 304, carry out the operation of filling heat-conductive medium and other microchannel 304 whether filling heat-conductive medium or to inject which kind of heat conduction medium independent mutually and non-interference.So when using the temperature control semiconductor processing device comprising described lower chambers portion 300 to process semiconductor crystal wafer, if wish to obtain, lower chambers inwall is heated uniformly, the identical heat conduction medium of identical temperature can be injected each bar microchannel 304 from described heat conduction media input 32, but the heat conduction media flow in every bar microchannel 304 to the heat conduction media flow in adjacent microchannel 304 to contrary.Now, because the heating of adjacent microchannel or uneven effect of freezing cancel each other, therefore relative to whole lower chambers inwall, the heating of acquisition or refrigeration are comparatively even.
In sum, by controlling the factor such as diameter of the flow velocity of heat conduction medium, kind (such as water, gas) and described microchannel, rational structure can be adopted and adopt appropriate strategies the inwall of described cavity and the chemicals between described inwall and semiconductor crystal wafer to be carried out to heating or the refrigeration of Expected Results for different time, the reaction rate of chemical treatment semiconductor crystal wafer can be regulated by described heating or refrigeration further, client's adjustment demand to described processing speed in time angle can be met better.Although Fig. 2 and the lower chambers portion that all adopts embodiment illustrated in fig. 3 are as embodiment, those skilled in the art can think easily the similar embodiment about portion of upper chamber or whole micro chamber portion and, therefore not state tired one by one herein.
All many-sides of the present invention for convenience of description, please focus on following demand: because chemicals enters in described micro chamber portion, then along the interstitial flow between semiconductor crystal wafer and the cavity inner wall in described micro chamber portion from an aperture usually.Due to the carrying out along with chemical reaction, the concentration of chemicals can be thinning gradually, and it is to the radioactive gradient concentration change of surrounding along described chemistry inlets that the change in concentration of this chemicals can be characterized by a kind of.Also be that in semiconductor crystal wafer, near the subregion of chemistry inlets, because the concentration of chemicals is higher, reaction speed is very fast, away from chemistry inlets subregion then because the concentration of chemicals is lower reaction speed comparatively slow, result in the surface treatment effect that semiconductor crystal wafer finally obtains uneven.In order to the uniform treatment effect to semiconductor wafer surface can be obtained, the treatment effeciency change that the change in concentration that certain gradient temperature can be adopted to control to compensate described chemicals causes.And the change starting point that this gradient temperature controls can be the entrance that described chemicals enters described micro chamber portion.In order to reach this object, described temperature control modules can for being formed at a tortuous microchannel in described micro chamber portion, described tortuous microchannel extends to form along zigzag path, and described zigzag path is from center to the path that surrounding extends, and described center corresponds to described chemistry inlets.
Please refer to Fig. 4, it illustrates the biopsy cavity marker devices schematic diagram of portion of upper chamber 120 in an embodiment 400 in the present invention.In this embodiment, described chemistry inlets is an aperture (not shown) of the center being formed at portion of described upper chamber.The circular upper cavity chamber interior walls 404 that portion of described upper chamber 400 comprises upper substrate portion 402 and upwards extends from described upper substrate portion 402, the upper flange 406 that the edge of described circular upper cavity chamber interior walls 404 also upwards extends, described upper flange 406 defines upper periphery part.Also temperature control modules is included in described upper substrate portion 402, described temperature control control module is the tortuous microchannel 408 for the flowing of heat conduction medium be formed in described upper substrate portion 402, namely described tortuous microchannel 408 extends to form along a helical path, and also diagrammatic cross section is parallel with described upper chamber inwall 404 for place, described helical path plane.Obviously, described helical path is the zigzag path extended centered by described chemistry inlets and from described center to surrounding.An opening of described tortuous microchannel 408 is arranged at the nearly middle position (not shown) in the back side in described upper substrate portion 402, can as heat conduction media outlet; Another opening of described microchannel 408 is arranged at the marginal position 409 in described upper substrate portion 402, can as heat conduction media input.
Above structure, when utilizing chemicals to process semiconductor crystal wafer, the hot fluid that adds of such as hot water and so on of suitable temperature can be injected from the heat conduction media input of described tortuous microchannel 408, and be flowed out by the heat conduction media outlet of described tortuous microchannel 408.The heating effect that the heating effect of hot fluid to the surrounding position of described upper chamber inwall is better than the middle position to described upper chamber inwall is added due to described, also the heating effect adding hot fluid described in being successively decreases in gradient from four circumferential center direction of upper chamber's inwall, and the concentration of chemicals is successively decreased in gradient from the mediad surrounding of upper chamber's inwall, if these two graded can cancel each other on the impact that chemical reaction rate causes, in regional in other words for described upper chamber inwall, can cancel each other with being slowed down by the thinning chemical reaction rate caused of chemistry concentration by heating the chemical reaction rate increase that causes, then can make to keep identical even in other words towards the semiconductor wafer surface of upper chamber's inwall chemical reaction rate everywhere.
In certain embodiments, if the change in concentration gradient of chemicals is comparatively even, then described helical path can adopt Archimedes spiral and fermat spiral equidistantly comparatively uniform helical.Should also be noted that, if adopt the tortuous microchannel of a helical coordinates measurement, the range of temperature that the heat conduction medium so flowing through its inside produces can only be finely tuned by the flow velocity of described heat conduction medium, when the flow velocity of described heat conduction medium in tortuous microchannel is fast, the temperature difference of heat conduction medium between described heat conduction media input and heat conduction media outlet is less; When the flow velocity of described heat conduction medium in tortuous microchannel is slow, the temperature difference of heat conduction medium between described heat conduction media input and heat conduction media outlet is larger.However, the amplitude of accommodation by regulating the flow velocity of described heat conduction medium to produce still can not meet the demand in some application.
Please continue to refer to Fig. 5, it illustrates the generalized section of lower chambers portion 140 in an embodiment 500 in the present invention.The circular lower chambers inwall that described lower chambers portion 500 comprises infrabasal plate portion 502 and upwards extends from described infrabasal plate portion 502, the lower flange that the edge of described circular lower chambers inwall also upwards extends, described lower flange defines lower peripheral portion.Also be formed with the first microchannel 504 and the second microchannel 506 for the flowing of heat conduction medium in described infrabasal plate portion 502, described microchannel extends to form along bipitch path, and also namely diagrammatic cross section is parallel with described lower chambers inwall for place, described bipitch path plane.Described bipitch path comprises the first helical path and the second helical path with described first helical path center symmetry.Wherein, the opening extending the first microchannel 504 generated along the first helical path is arranged at the back side middle position 51 in described infrabasal plate portion 502, can as heat conduction media input, another opening extending the first microchannel 504 generated along the first helical path is arranged at first marginal position 52 in described infrabasal plate portion 502, can as heat conduction media outlet; The opening extending the second microchannel 506 generated along the second helical path is arranged at the back side middle position 51 in described infrabasal plate portion 502 equally, but by as heat conduction media outlet, another opening extending the second microchannel 506 generated along the second helical path is arranged at second marginal position 53 in described infrabasal plate portion 502, can as heat conduction media input.
One of feature of said structure is: the first helical path and described second helical path are Central Symmetry patterns, makes the first microchannel 504 and the second microchannel 506 in fact be intersect to exist in described infrabasal plate portion 502.Two of the feature of said structure is: heat conduction medium being from the flowing of mediad surrounding in the first microchannel 504 along described first helical coordinates measurement, in the second microchannel 506 along described second helical coordinates measurement from four circumferential central flows.And above structure, can adopt and inject cryogenic fluid in the first microchannel 504, and in described second microchannel 506 mode of injection heating fluid, can obtain and therefrom point to the temperature difference by a relatively large margin of surrounding position in heart position for described lower chambers inwall.Relative to embodiment illustrated in fig. 4, the present embodiment can obtain and more hold manageable gradient temperature adjustment by a larger margin.Those skilled in the art can think and arrive, the flow direction of the heat-conducting fluid in the present embodiment, speed and temperature can carry out certain control and change according to different needs, with the heat-conducting fluid of the second microchannel 506 interior can all flow same temperature, same type in such as described first microchannel 504, and the flow direction in described first microchannel 504 and in the second microchannel 506 can be all from four circumferential central flows etc., might not stick to and describe herein.
Certainly, if described tortuous microchannel is not when adopting double-screw coordinates measurement, the technique effect of similar Fig. 5 can also being realized by other execution mode, such as by the tortuous microchannel in embodiment illustrated in fig. 4, double tubular passage arranged side by side can be revised as from only having one tubular conduit.Inject different heat conduction medium by utilizing rightabout and give this two bursts of tubular conduits, foregoing invention thought can be realized equally.Described tortuous microchannel is that the structural representation of double tubular passage arranged side by side can reference diagram 6.
In sum, by to form described tortuous microchannel relative to the zigzag path centered by chemistry inlets in described micro chamber portion, the temperature that the heat conduction medium flowing through described tortuous microchannel can be adopted to produce different gradient controls to compensate the reaction rate difference that the chemicals of variable concentrations gradient causes.If adopting is the flowing that the tortuous microchannel of double tubular passage arranged side by side and two strands of opposite course add hot fluid or cryogenic fluid, the gradient temperature that can also obtain better controllability controls.Above technical scheme, can meet client's adjustment demand to processing speed on space angle to a certain extent.But in some application scenarios, client also wishes to regulate to the processing speed obtaining expectation by the arbitrary assigned address on space angle.
For this reason, please continue to refer to Fig. 7, it illustrates the perspective diagram of lower chambers portion 140 in an embodiment 700 in the present invention.The circular lower chambers inwall that described lower chambers portion 700 comprises infrabasal plate portion 702 and upwards extends from described infrabasal plate portion 702, the edge of described circular lower chambers inwall also upwards extends to form lower flange, and described lower flange defines lower peripheral portion.Also temperature control modules is included in described infrabasal plate portion 702, described temperature control modules comprises several temperature control units 704, several temperature control units 704 described are intensive to be evenly arranged in described lower chambers portion 700, each temperature control unit 704 corresponds to the zones of different of described lower chambers inwall, and the temperature of each temperature control unit 704 controls independent mutually.In one embodiment, described temperature control unit 704 can be miniature electrical resistor heating element.Described miniature electrical resistor heating element adopts the principle of resistance heating power to heat.In further embodiments, described temperature control unit 704 can be fluid temperature conditioning unit, the structure of described fluid temperature conditioning unit can shown in reference diagram 8, described fluid temperature conditioning unit 800 comprises a reservoir 820 and the heat conduction media input 840 and the heat conduction media outlet 860 that are communicated with described reservoir 820, and described heat conduction media input 840 and heat conduction media outlet 860 can be the plastic flexible pipes that diameter is thinner.Obviously, when using the temperature control semiconductor processing device comprising described lower chambers portion 700 to process semiconductor crystal wafer, can obtain for assigned address the temperature control effect expected, thus obtaining ideal processing speed regulating effect.
In addition, described temperature control semiconductor processing device can also comprise heat conduction medium feeding mechanism and heat conduction medium gathering-device, and described heat conduction medium feeding mechanism can be connected to described heat conduction media input, for providing heat conduction medium.Described heat conduction medium gathering-device can be connected to described heat conduction media outlet, for collecting the heat conduction medium after flowing through described tortuous microchannel or fluid temperature conditioning unit, wherein, described heat conduction medium comprises and adds hot fluid and cryogenic fluid, and described fluid can be liquid or gas.Described heat conduction medium feeding mechanism can also comprise at least one adjuster valve, and described adjuster valve enters the flow rate of described tortuous microchannel or fluid temperature conditioning unit for controlling described heat conduction medium, to obtain better temperature regulation effect further.
Mainly focus on the associated description in described micro chamber portion above, but will be appreciated that, described micro chamber portion also may be other structure and shape, described micro chamber portion is not limited to this structural type in portion of upper chamber and lower chambers portion, as long as can form the cavity holding described semiconductor crystal wafer.Even if but described micro chamber portion adopts portion of upper chamber and this structural type in lower chambers portion, described temperature control semiconductor processing device also not only comprises this critical piece of micro chamber portion, such as also should comprise order about portion of described upper chamber and lower chambers portion and convert between a closed position and a open position corresponding mechanical structure, also should comprise corresponding chemicals generator and thermometer and chemicals analyzer etc. equipment.So all many-sides in order to describe described temperature control semiconductor processing device, incorporated by reference to reference to figure 9 and Figure 10, it illustrates the temperature control semiconductor processing device schematic perspective view that difference is in the closed position and in an open position in an embodiment 900 in the present invention.Briefly, described temperature control semiconductor processing device 900 comprises a micro chamber for the treatment of semiconductor crystal wafer formed by portion of upper chamber 920 and lower chambers portion 940.Portion of described upper chamber 920 is connected by articulated part 960 with the part edge in described lower chambers portion 940.When portion of described upper chamber 920 and described lower chambers portion 940 rotate along described articulated part 960 and are in an open position as shown in Figure 10, make the lower chambers plate 942 in the upper chamber's plate 922 in portion of described upper chamber 920 and described lower chambers portion 940 disconnected from each other, so that load and remove that will be processed or processed semiconductor crystal wafer in described micro chamber; When portion of described upper chamber 920 and/or lower chambers portion 940 rotate around described articulated part 960 and be in an off-position as shown in Figure 9, the lower chambers plate 942 in the upper chamber's plate 922 in portion of described upper chamber 920 and described lower chambers portion 940 is fitted tightly and is formed and hold and the micro chamber of process semiconductor crystal wafer.When semiconductor crystal wafer is loaded into described micro chamber, and when described micro chamber is in the closed position, chemical reagent and other fluids can be introduced described micro chamber inner to analyze the semiconductor crystal wafer in it, to clean, to etch and other process, and in processing procedure and after being disposed, the described chemical reagent after process and other fluid are drawn described micro chamber.Described upper chamber plate 922 and described lower chambers plate 942 adopt removable design simultaneously, when needing to process the semiconductor crystal wafer of different size or needing to obtain different heating or refrigeration, suitable upper chamber's plate 922 can be changed and lower chambers plate 942 satisfies the demands.
Above-mentioned explanation fully discloses the specific embodiment of the present invention.It is pointed out that the scope be familiar with person skilled in art and any change that the specific embodiment of the present invention is done all do not departed to claims of the present invention.Correspondingly, the scope of claim of the present invention is also not limited only to described embodiment.
Claims (4)
1. a temperature control semiconductor processing device, is characterized in that, it comprises:
One for holding and process the micro chamber portion of semiconductor crystal wafer, semiconductor crystal wafer is loaded in the cavity formed in described micro chamber portion, and be formed for processing the space that fluid flows between the inwall of semiconductor crystal wafer and described cavity, at least one enters described cavity entrance and at least one outlet for cavity described in process fluid expulsion for process fluid is also comprised in described micro chamber portion
Described micro chamber portion also includes the temperature control modules of the outer peripheral areas being arranged at described cavity,
Described micro chamber portion comprises portion of upper chamber and lower chambers portion,
The circular upper cavity chamber interior walls that portion of described upper chamber comprises upper substrate portion and upwards extends from described upper substrate portion, the upper flange that the edge of described circular upper cavity chamber interior walls also upwards extends, described upper flange defines upper periphery part,
The circular lower chambers inwall that described lower chambers portion comprises infrabasal plate portion and upwards extends from described infrabasal plate portion, the lower flange that the edge of described circular lower chambers inwall also upwards extends, described lower flange defines lower peripheral portion,
Portion of described upper chamber is connected by articulated part with the part edge in described lower chambers portion,
When portion of described upper chamber and described lower chambers portion along described articulated part rotate and in an open position time, make the lower chambers plate in the upper chamber's plate in portion of described upper chamber and described lower chambers portion disconnected from each other; When portion of described upper chamber and/or lower chambers portion around described articulated part rotate and in the closed position time, the lower chambers plate in the upper chamber's plate in portion of described upper chamber and described lower chambers portion is fitted tightly and is formed and hold and the cavity of process semiconductor crystal wafer,
Described temperature control modules comprises several temperature control units, each temperature control unit corresponds to the different outer peripheral areas of described cavity, described temperature control unit is be arranged at electrical resistor heating element in described micro chamber portion or fluid temperature conditioning unit, described fluid temperature conditioning unit comprises a reservoir and the heat conduction media input and the heat conduction media outlet that are communicated with described reservoir
Described temperature control modules is the tortuous microchannel be formed in described micro chamber portion, described tortuous microchannel comprise some end to end and be parallel to the microchannel of described cavity inner wall, also comprise the heat conduction media input corresponding to described tortuous microchannel and heat conduction media outlet in described micro chamber portion; Described temperature control modules is the microchannel that some of being formed in described micro chamber portion are parallel to described cavity inner wall, also comprises some heat conduction media input and heat conduction media outlet to corresponding to every bar microchannel in described micro chamber portion; Or, described temperature control modules is the tortuous microchannel be formed in described micro chamber portion, described tortuous microchannel extends to form along zigzag path, described zigzag path comprises at least one from center to the path that surrounding extends, and described center corresponds to the described entrance entering described cavity for process fluid;
Described temperature control semiconductor processing device also comprises heat conduction medium feeding mechanism and heat conduction medium gathering-device, described heat conduction medium feeding mechanism, be connected to described heat conduction media input, for providing heat conduction medium, with described heat conduction medium gathering-device, be connected to described heat conduction media outlet, for collecting the heat conduction medium after flowing through described microchannel
Wherein, described heat conduction medium comprises and adds hot fluid and cryogenic fluid, also comprises at least one adjuster valve in described heat conduction medium feeding mechanism, and described adjuster valve enters the flow rate of described microchannel for controlling described heat conduction medium.
2. temperature control semiconductor processing device according to claim 1, is characterized in that, described zigzag path is that a helical path or two are along described centrosymmetric helical path.
3. temperature control semiconductor processing device according to claim 2, is characterized in that, described helical is Archimedes spiral or fermat spiral.
4. temperature control semiconductor processing device according to claim 1, is characterized in that, described tortuous microchannel is two tubular conduits arranged side by side, wherein the adjacent heat conduction media outlet with another tubular conduit of the heat conduction media input of a tubular conduit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110215745.6A CN102903624B (en) | 2011-07-29 | 2011-07-29 | Temperature control semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110215745.6A CN102903624B (en) | 2011-07-29 | 2011-07-29 | Temperature control semiconductor processing device |
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| Publication Number | Publication Date |
|---|---|
| CN102903624A CN102903624A (en) | 2013-01-30 |
| CN102903624B true CN102903624B (en) | 2015-12-16 |
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| CN106783669B (en) * | 2015-11-25 | 2019-04-12 | 无锡华瑛微电子技术有限公司 | Semiconductor processing device and method |
| CN106091221B (en) * | 2016-06-01 | 2019-06-07 | 苏州格兰斯柯光电科技有限公司 | A kind of fresh-air fan pipeline based on fermat spiral |
| CN107842607B (en) * | 2016-09-21 | 2020-07-31 | 无锡华瑛微电子技术有限公司 | Chemical liquid storage bottle and modular semiconductor processing equipment |
| CN110361938B (en) * | 2018-03-26 | 2021-03-02 | 上海微电子装备（集团）股份有限公司 | Exposure method and manufacturing method of semiconductor device |
| CN112859275B (en) * | 2021-01-20 | 2021-12-14 | 中国科学院西安光学精密机械研究所 | Cold optics self-adaptation thermal deformation compensation structure based on Archimedes spiral |
| CN116844991A (en) * | 2022-03-23 | 2023-10-03 | 无锡华瑛微电子技术有限公司 | Semiconductor processing apparatus, semiconductor processing system, and semiconductor edge positioning method |
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| US6239038B1 (en) * | 1995-10-13 | 2001-05-29 | Ziying Wen | Method for chemical processing semiconductor wafers |
| CN1781181A (en) * | 2003-03-31 | 2006-05-31 | 兰姆研究公司 | Substrate support having temperature controlled surface |
| CN101978481A (en) * | 2008-03-25 | 2011-02-16 | 应用材料股份有限公司 | Temperature measurement and control of wafer support in thermal processing chamber |
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| CN1781181A (en) * | 2003-03-31 | 2006-05-31 | 兰姆研究公司 | Substrate support having temperature controlled surface |
| CN101978481A (en) * | 2008-03-25 | 2011-02-16 | 应用材料股份有限公司 | Temperature measurement and control of wafer support in thermal processing chamber |
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