CN102903819A - LED with extension electrode - Google Patents
LED with extension electrode Download PDFInfo
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- CN102903819A CN102903819A CN2012104233463A CN201210423346A CN102903819A CN 102903819 A CN102903819 A CN 102903819A CN 2012104233463 A CN2012104233463 A CN 2012104233463A CN 201210423346 A CN201210423346 A CN 201210423346A CN 102903819 A CN102903819 A CN 102903819A
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Abstract
The invention discloses an LED with an electrode structure capable of improving the light-emitting efficiency and improving the light-emitting uniformity. Light is emitted by bypassing an electrode by reducing the width and thickness of single finger electrode to be close to the wavelength of light and by utilizing light diffraction and interference feature, and therefore the light-emitting efficiency is improved. The electrode structure comprises two or more contact points and finger electrode parts. The LED with the electrode structure can be applied to an LED chip with a front-mounted or vertical structure.
Description
Technical field
The present invention relates to have the light-emitting diode of expansion electrode, particularly a kind of light-emitting diode that has the raising light extraction efficiency and improve the electrode structure of light-emitting uniformity.
Background technology
Light-emitting diode (LED) is through for many years development, has been widely used in the different field such as demonstration, indication, backlight, illumination.
At present a lot of light-emitting diodes adopt metal electrode finger-type structure to carry out current expansion, thereby improve the luminous efficiency of device.As shown in Figure 1, for US Patent No. 5698865 disclosed a kind of electrode structural charts, be distributed with metal finger electrodes 7 on the light emitting surface of light emitting diode.In order to reach good current expansion effect, its width is generally all more than 1um.But metal is opaque, and the finger electrodes structure has been brought the shortcoming that reduces to send out my face kind, has therefore greatly affected light extraction efficiency, and because being in the light of electrode caused the uneven distribution of bright dipping.
Summary of the invention
The problem that exists for solving prior art the invention provides a kind of raising light extraction efficiency and improves inhomogeneity led designs scheme.
Technical scheme of the present invention is: a kind of light-emitting diode with expansion electrode, comprise semiconductor light emitting lamination, electrode, it is characterized in that: described electrode is positioned at light emitting surface of light emitting diode, comprises contact electrode and finger electrodes, and the width of described part or all of finger electrodes is submicron order.
Further, described semiconductor light emitting lamination is luminous produces diffraction of light or interference when light is arranged by described finger electrodes.
Preferably, width and the emission wavelength of described finger electrodes part approach, and are no more than the twice of luminous dominant wavelength, and its thickness can not surpass luminous
Peak valueThe twice of wavelength can be utilized like this diffraction of light and interfere the raising light extraction efficiency.In some embodiments of the invention, the width of described finger electrodes is for being less than or equal to 800nm.In some embodiments of the invention, the width of described finger electrodes approaches or equals described lumination of light emitting diode peak wavelength.
Preferably, the area that surrounds of described finger electrodes is more than or equal to half of light emitting surface of light emitting diode area.
Preferably, described contact electrode comprises two contact points, and described finger electrodes is extended to second contact point by first make contact.In some embodiments of the invention, be better current expansion, all finger electrodes are all drawn by contact point, and have a plurality of finger electrodes partly to improve the current expansion ability.Be the light-emitting diode of exiting surface for the p face, can between epitaxial loayer and metal electrode, add transparent electrode layer with the motor current extended capability.In some embodiments of the invention, described finger electrodes can be greater than the width near the contact point place, so that electric current can expand to the part away from contact point at the width of distance contact point farthest.
Preferably, described exiting surface electrode is metal electrode or oxide electrode, and its material can be selected from Au, Pt, Cu, Al, Ti, Ni, Cr, the combination in any of metal oxide or above-mentioned material.
The present invention has considered interference of light, diffraction characteristic, and finger electrodes has partly adopted the structural design of sub-micron width.Because the diffraction of light characteristic, light can be walked around the outgoing of finger electrodes part in this structure, is not stopped by it, thereby has mentioned the light extraction efficiency of light-emitting diode.Simultaneously, for extend current effectively, adopted a plurality of submicron order finger electrodes parts, thereby can improve light-emitting uniformity.
Description of drawings
Accompanying drawing is used to provide a further understanding of the present invention, and consists of the part of specification, is used for together with embodiments of the present invention explaining the present invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is the electrode vertical view (US5698865) of existing typical light-emitting diode.
Fig. 2 is according to a kind of light emitting diode construction of the invention process.
Fig. 3 is related exiting surface electrode structure vertical view in the light-emitting diode shown in Figure 2.
Fig. 4 is the partial enlarged drawing of electrode structure shown in Figure 3.
Fig. 5 is the bright dipping effect simulation figure of existing scheme.
Fig. 6 is the bright dipping effect simulation figure of scheme shown in Figure 3.
Embodiment
Following embodiment discloses a kind of light-emitting diode with expansion electrode, comprises semiconductor light emitting lamination and electrode structure.The electrode structure that wherein is positioned at exiting surface comprises that some serial width are the expansion electrode of submicron order and the spherical contact electrode that is used for Injection Current.All finger electrodes are all drawn by contact point, when light penetrates from the exiting surface of light-emitting diode, produce diffraction of light or interference at the expansion electrode place of submicron order, walk around the outgoing of finger electrodes part, thereby do not stopped by it, mentioned the light extraction efficiency of light-emitting diode.
Below in conjunction with drawings and Examples enforcement of the present invention is described further.Describe as an example of the light-emitting diode of vertical stratification example in this embodiment.
As shown in Figure 2, a kind of light-emitting diode comprises: electrically-conductive backing plate 21, and the substrate top deposits the semiconductor light emitting lamination, is followed successively by p-type semiconductor layer 22, MWQ luminescent layer 23 and N-shaped semiconductor layer 24, and N-shaped semiconductor layer upper surface is exiting surface 25.Make electrode pattern thereon, the diagonal angle of light-emitting diode is distributed with two spherical contact electrodes 26, extends finger electrodes part 27 from contact point, and its width approximates luminous dominant wavelength.Fig. 3 is the vertical view of exiting surface, and the area that is surrounded by finger electrodes 27 has as can be seen from Figure occupied most of zone of lumination of light emitting diode face.Fig. 4 is the amplification of carrying out in order clearly to represent electrode structure, and the width of finger electrodes 27 is near bright dipping dominant wavelength, and is slightly less than width away from spherical contact electrode 26 places near the width at spherical contact electrode 26 places.
Following table has been listed the preferable width of finger electrodes corresponding to LED of all kinds:
The material of former electrodes can be selected from Au, Pt, Cu, Al, Ti, Ni, Cr, the combination in any of metal oxide or above-mentioned material, its concrete production method is for to form electrode pattern with photoetching, then with ion sputtering, electron beam transpiration or electric plating method growth electrode, then peel off the electrode material layer on the photoresist, and the formation electrode that removes photoresist.The formation of electrode pattern is not limited to this mode among the present invention.Also can be at the N-shaped epitaxial loayer insulating barrier of growing, then light shield and etching obtain electrode pattern, remove photoresist.By electroplating, perhaps then the mode of the sputter electrode of growing uses the means of cmp (CMP) to make the thickness of electrode less than 1um.
In the present embodiment, arrive close to wavelength by the width that reduces the finger electrodes part, because diffraction of light, light can be walked around this part and realize outgoing, avoided it to the blocking of light, improved light extraction efficiency, and it is inhomogeneous to have eliminated the be in the light bright dipping that causes of finger electrodes part figure.In addition, make the finger-type structure all extend out to reach from contact point and make the evenly purpose of expansion of electric current.Thereby light efficiency and uniformity have effectively been improved.
Fig. 5 and Fig. 6 are respectively the bright dipping simulation drawing of the electrode structure that adopts in prior art and the present embodiment.Be specially the light effect that goes out that Fig. 5 has simulated dotted rectangle frame 14 among Fig. 1, (a) figure has represented luminous intensity along the normalized light intensity of each position, long limit of rectangle frame 14, (b) figure has represented the bright dipping light intensity on whole rectangle 14 planes, and black represents that light intensity is little.Fig. 6 has simulated the light effect that of the dotted rectangle frame 31 among Fig. 3, and (a) identical with Fig. 5 two figure implications with (b), as can be seen from the figure the relative light intensity of each position all is about 1, does not have the frequency modulated light part.
By the going out light effect and can see intuitively that electrode structure finger electrodes of the present invention partly there is no and be in the light of simulation, light can and be interfered uniform by diffraction.And the finger electrodes of prior art partly exists significantly and is in the light.Therefore, the electrode structure of the present embodiment can improve light extraction efficiency significantly, and improves light-emitting uniformity.
Above embodiment only is only usefulness of explanation the present invention directly perceived, is not limitation of the present invention.Concrete graphic scheme can be done various variations, as long as in each claim limited range, all belongs to the category of the present invention's protection.
Claims (10)
1. the light-emitting diode that has expansion electrode comprises semiconductor light emitting lamination, electrode, it is characterized in that: described electrode is positioned at light emitting surface of light emitting diode, comprises contact electrode and finger electrodes, and the width of described part or all of finger electrodes is submicron order.
2. the light-emitting diode with expansion electrode according to claim 1 is characterized in that: the phenomenon that produces diffraction or interference when described semiconductor light emitting lamination has light by described finger electrodes when luminous.
3. the light-emitting diode with expansion electrode according to claim 2, it is characterized in that: the width of described finger electrodes is less than or equal to 2 times of lumination of light emitting diode peak wavelength.
4. the light-emitting diode with expansion electrode according to claim 2, it is characterized in that: the width of described finger electrodes is less than or equal to 800nm.
5. the light-emitting diode with expansion electrode according to claim 4 is characterized in that: the width of described finger electrodes approaches or equals described lumination of light emitting diode peak wavelength.
6. the light-emitting diode with expansion electrode according to claim 2, it is characterized in that: the thickness of described finger electrodes is no more than the twice of peak luminous wavelength.
7. the light-emitting diode with expansion electrode according to claim 2 is characterized in that: the area that described finger electrodes is surrounded is more than or equal to half of light emitting surface of light emitting diode area.
8. the light-emitting diode with expansion electrode according to claim 2, it is characterized in that: described electrode contact electrode comprises two contact points, described finger electrodes is extended to second contact point by first make contact.
9. the light-emitting diode with expansion electrode according to claim 2 is characterized in that: described finger electrodes at the width of distance contact electrode farthest greater than the width near the contact electrode place.
10. the light-emitting diode with expansion electrode according to claim 2, it is characterized in that: described exiting surface electrode is metal electrode or oxide electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210423346.3A CN102903819B (en) | 2012-10-30 | 2012-10-30 | There is the light-emitting diode of expansion electrode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210423346.3A CN102903819B (en) | 2012-10-30 | 2012-10-30 | There is the light-emitting diode of expansion electrode |
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| CN102903819A true CN102903819A (en) | 2013-01-30 |
| CN102903819B CN102903819B (en) | 2015-12-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700744A (en) * | 2013-12-23 | 2014-04-02 | 安徽三安光电有限公司 | Light-emitting device |
| CN106992235A (en) * | 2017-04-28 | 2017-07-28 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode chip for backlight unit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| CN1433578A (en) * | 1999-12-01 | 2003-07-30 | 美商克立光学公司 | Scalable LED with improved current spreading structures |
| US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
| US20040232454A1 (en) * | 2000-03-31 | 2004-11-25 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
-
2012
- 2012-10-30 CN CN201210423346.3A patent/CN102903819B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| CN1433578A (en) * | 1999-12-01 | 2003-07-30 | 美商克立光学公司 | Scalable LED with improved current spreading structures |
| US20040232454A1 (en) * | 2000-03-31 | 2004-11-25 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
| US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700744A (en) * | 2013-12-23 | 2014-04-02 | 安徽三安光电有限公司 | Light-emitting device |
| CN106992235A (en) * | 2017-04-28 | 2017-07-28 | 厦门乾照光电股份有限公司 | A kind of light-emitting diode chip for backlight unit |
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| Publication number | Publication date |
|---|---|
| CN102903819B (en) | 2015-12-16 |
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