CN102903819B - There is the light-emitting diode of expansion electrode - Google Patents
There is the light-emitting diode of expansion electrode Download PDFInfo
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- CN102903819B CN102903819B CN201210423346.3A CN201210423346A CN102903819B CN 102903819 B CN102903819 B CN 102903819B CN 201210423346 A CN201210423346 A CN 201210423346A CN 102903819 B CN102903819 B CN 102903819B
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Abstract
A kind of light-emitting diode with the electrode structure improving light extraction efficiency and improve light-emitting uniformity disclosed by the invention, by reducing the width of single finger electrodes and thickness of electrode to the wavelength close to light, utilize diffraction and the interference pattern of light, make light walk around electrode and outgoing, thus increase light extraction efficiency.Described electrode structure comprises two or more contact points and finger electrodes part.This structure can be applicable to the light-emitting diode chip for backlight unit of formal dress or vertical stratification.
Description
Technical field
The present invention relates to the light-emitting diode with expansion electrode, particularly a kind of light-emitting diode with the electrode structure improving light extraction efficiency and improve light-emitting uniformity.
Background technology
Light-emitting diode (LED), through development for many years, has been widely used in the different field such as display, instruction, backlight, illumination.
A lot of light-emitting diode adopts metal electrode finger-like structure to carry out current expansion at present, thus improves the luminous efficiency of device.As shown in Figure 1, a kind of electrode structural chart disclosed in US Patent No. 5698865, light emitting surface of light emitting diode is distributed with metal finger electrodes 7.In order to reach good current expansion effect, its width is general all at more than 1um.But metal is opaque, finger electrodes structure brings and reduces to send out the shortcoming of my face kind, therefore greatly have impact on light extraction efficiency, and causes the uneven distribution of bright dipping due to being in the light of electrode.
Summary of the invention
For solving prior art Problems existing, the invention provides a kind of LED designs scheme improving light extraction efficiency and improve uniformity.
Technical scheme of the present invention is: a kind of light-emitting diode with expansion electrode, comprise semiconductor light emitting lamination, electrode, it is characterized in that: described electrode is positioned at light emitting surface of light emitting diode, comprise contact electrode and finger electrodes, the width of described part or all of finger electrodes is submicron order.
Further, described semiconductor light emitting lamination luminescence has light by producing diffraction or the interference of light during described finger electrodes.
Preferably, width and the emission wavelength of described finger electrodes part are close, and be no more than the twice of luminous dominant wavelength, its thickness can not exceed luminescence
peak valuethe twice of wavelength, can utilize the diffraction of light like this and interfere and improve light extraction efficiency.In some embodiments of the invention, the width of described finger electrodes is for being less than or equal to 800nm.In some embodiments of the invention, described finger electrodes width close to or equal described lumination of light emitting diode peak wavelength.
Preferably, the area that described finger electrodes is surrounded is more than or equal to the half of light emitting surface of light emitting diode area.
Preferably, described contact electrode comprises two contact points, and described finger electrodes is extended to second contact point by first make contact.In some embodiments of the invention, be better current expansion, all finger electrodes are all drawn by contact point, and have multiple finger electrodes part to improve current expansion ability.Be the light-emitting diode of exiting surface for p face, transparent electrode layer can be added with motor current extended capability between epitaxial loayer and metal electrode.In some embodiments of the invention, described finger electrodes can be greater than width close to contact point place at the width of distance contact point farthest, can expand to part away from contact point to make electric current.
Preferably, described exiting surface electrode is metal electrode or oxide electrode, and its material can be selected from Au, Pt, Cu, Al, Ti, Ni, Cr, the combination in any of metal oxide or above-mentioned material.
Contemplated by the invention the interference of light, diffraction characteristic, finger electrodes part have employed the structural design of sub-micron width.Due to the diffraction characteristic of light, in this structure, light can walk around the outgoing of finger electrodes part, not stop by it, thus refer to the light extraction efficiency of light-emitting diode.Meanwhile, in order to extend current effectively, have employed multiple submicron order finger electrodes part, thus can light-emitting uniformity be improved.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the electrode vertical view (US5698865) of existing typical light emitting diode.
Fig. 2 is according to a kind of light emitting diode construction of the invention process.
Fig. 3 is exiting surface electrode structure vertical view involved in the light-emitting diode shown in Fig. 2.
Fig. 4 is the partial enlarged drawing of electrode structure shown in Fig. 3.
Fig. 5 is the light-out effect simulation drawing of existing scheme.
The light-out effect simulation drawing that Fig. 6 is scheme shown in Fig. 3.
Embodiment
Embodiment discloses a kind of light-emitting diode with expansion electrode below, comprises semiconductor light emitting lamination and electrode structure.The electrode structure being wherein positioned at exiting surface comprises expansion electrode that some serial width are submicron order and the spherical contact electrode for Injection Current.All finger electrodes are all drawn by contact point, when light penetrates from the exiting surface of light-emitting diode, produce diffraction or the interference of light at the expansion electrode place of submicron order, walk around the outgoing of finger electrodes part, thus not stop by it, refer to the light extraction efficiency of light-emitting diode.
Below in conjunction with drawings and Examples, enforcement of the present invention is described further.Be described for the light-emitting diode of vertical stratification in this embodiment.
As shown in Figure 2, a kind of light-emitting diode, comprises: electrically-conductive backing plate 21, and surface deposits semiconductor light emitting lamination, is followed successively by p-type semiconductor layer 22, MWQ luminescent layer 23 and n-type semiconductor layer 24, and n-type semiconductor layer upper surface is exiting surface 25.Make electrode pattern thereon, the diagonal angle of light-emitting diode is distributed with two spherical contact electrodes 26, and extend finger electrodes part 27 from contact point, its width approximates luminous dominant wavelength.Fig. 3 is the vertical view of exiting surface, and the area surrounded by finger electrodes 27 as can be seen from Figure occupies most of region in lumination of light emitting diode face.Fig. 4 is the amplification carried out to clearly represent electrode structure, and the width of finger electrodes 27 close to bright dipping dominant wavelength, and is slightly less than the width away from spherical contact electrode 26 place close to the width at spherical contact electrode 26 place.
Following table lists the preferable width of finger electrodes corresponding to assorted LED:
The material of former electrodes can be selected from Au, Pt, Cu, Al, Ti, Ni, Cr, the combination in any of metal oxide or above-mentioned material, its concrete production method is for form electrode pattern with photoetching, then with ion sputtering, electron beam transpiration or electric plating method growth electrode, the electrode material layer on photoresist is then peeled off, and the formation electrode that removes photoresist.In the present invention, the formation of electrode pattern is not limited to which.Also can grow insulating barrier on N-shaped epitaxial loayer, then light shield also etches and obtains electrode pattern, removes photoresist.By plating, or the mode of sputtering grows electrode, then uses the means of cmp (CMP) to make the thickness of electrode be less than 1um.
In the present embodiment, by reducing the width of finger electrodes part to close to wavelength, due to the diffraction of light, light can be walked around this part and realize outgoing, avoid its blocking light, improve light extraction efficiency, and it is uneven to eliminate the be in the light bright dipping that causes of finger electrodes part figure.In addition, finger-like structure is made all to extend out the object that can reach and uniform current is expanded from contact point.Thus effectively improve light efficiency and uniformity.
Fig. 5 and Fig. 6 to be respectively in prior art and the present embodiment adopt the bright dipping simulation drawing of electrode structure.Be specially the light-out effect that Fig. 5 simulates dotted rectangle frame 14 in Fig. 1, a () figure illustrates out the normalized light intensity of luminous intensity along each position, long limit of rectangle frame 14, b () figure illustrates the bright dipping light intensity of whole rectangle 14 plane, black represents that light intensity is little.Fig. 6 simulates the light-out effect of the dotted rectangle frame 31 in Fig. 3, and (a) is identical with Fig. 5 two figure implication with (b), and as can be seen from the figure the relative light intensity of each position is all about 1, does not have frequency modulated light part.
Can see that electrode structure finger electrodes part of the present invention there is no intuitively by the light-out effect of simulation to be in the light, light by diffraction and can interfere uniform.And the finger electrodes part existence of prior art is significantly in the light.Therefore, the electrode structure of the present embodiment can improve light extraction efficiency significantly, and improves light-emitting uniformity.
Above embodiment is only directly perceived and the present invention's only use is described, not limitation of the present invention.Concrete graphic scheme can do various change, as long as in each claim limited range, all belongs to the category of the present invention's protection.
Claims (6)
1. there is the light-emitting diode of expansion electrode, comprise semiconductor light emitting lamination, electrode, it is characterized in that: described electrode is positioned at light emitting surface of light emitting diode, comprise contact electrode and finger electrodes, described electrode contact electrode comprises two contact points, described finger electrodes is extended to second contact point by first make contact, the width of described part or all of finger electrodes is submicron order, described finger electrodes is greater than the width close to contact electrode place at the width of distance contact electrode farthest, described semiconductor light emitting lamination has light by producing the phenomenon of diffraction or interference during described finger electrodes time luminous, walk around the outgoing of finger electrodes part, eliminate being in the light of finger electrodes, improve the light extraction efficiency of described light-emitting diode.
2. the light-emitting diode with expansion electrode according to claim 1, is characterized in that: the width of described finger electrodes is less than or equal to 2 times of lumination of light emitting diode peak wavelength.
3. the light-emitting diode with expansion electrode according to claim 1, is characterized in that: the width of described finger electrodes is less than or equal to 800nm.
4. the light-emitting diode with expansion electrode according to claim 3, is characterized in that: the width of described finger electrodes equals described lumination of light emitting diode peak wavelength.
5. the light-emitting diode with expansion electrode according to claim 1, is characterized in that: the thickness of described finger electrodes is no more than the twice of peak luminous wavelength.
6. the light-emitting diode with expansion electrode according to claim 1, is characterized in that: described exiting surface electrode is metal electrode or oxide electrode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210423346.3A CN102903819B (en) | 2012-10-30 | 2012-10-30 | There is the light-emitting diode of expansion electrode |
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| CN201210423346.3A CN102903819B (en) | 2012-10-30 | 2012-10-30 | There is the light-emitting diode of expansion electrode |
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| CN102903819B true CN102903819B (en) | 2015-12-16 |
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| CN103700744A (en) * | 2013-12-23 | 2014-04-02 | 安徽三安光电有限公司 | Light-emitting device |
| CN106992235B (en) * | 2017-04-28 | 2020-05-01 | 厦门乾照光电股份有限公司 | Light-emitting diode chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| CN1433578A (en) * | 1999-12-01 | 2003-07-30 | 美商克立光学公司 | Scalable LED with improved current spreading structures |
| US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1278249B8 (en) * | 2000-03-31 | 2013-11-27 | Toyoda Gosei Co., Ltd. | Group-iii nitride compound semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| CN1433578A (en) * | 1999-12-01 | 2003-07-30 | 美商克立光学公司 | Scalable LED with improved current spreading structures |
| US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
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