CN103035818A - Support frame of light emitting diode (LED) with vertical structure and light emitting diode (LED) with vertical structure - Google Patents
Support frame of light emitting diode (LED) with vertical structure and light emitting diode (LED) with vertical structure Download PDFInfo
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- CN103035818A CN103035818A CN2012104870508A CN201210487050A CN103035818A CN 103035818 A CN103035818 A CN 103035818A CN 2012104870508 A CN2012104870508 A CN 2012104870508A CN 201210487050 A CN201210487050 A CN 201210487050A CN 103035818 A CN103035818 A CN 103035818A
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- support
- head
- another
- cup
- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
The invention discloses a support frame of a light emitting diode (LED) with a vertical structure and the LED with the vertical structure. The support frame is characterized in that two head portions of a chip support frame and an electrode support frame are fixedly connected to form a whole and are mutually isolated in an electric mode. A cup is formed on the two top faces of the two head portions, wherein at least parts of the two top faces serve as an inner bottom face of the cup and the cup opens upwards. The inner bottom face comprises a welding area and an installation area, wherein the welding area is located on one top face and is used for electrical connection of one head portion and a welding wire of an electric pole, and the installation area is located on the other top face and is used for installation of the chip on the other head portion. The LED with the vertical structure is further characterized in that the cup is filled with an inner encapsulation body, the inner encapsulation body and the cup is encapsulated in an outer encapsulation body, and then any portion of the welding wire is preventing from being located outside the outer encapsulation body. The support frame of the LED with the vertical structure and the LED with the vertical structure have the advantages that the welding wire is prevented from disconnecting when the LED with the vertical structure is used and the service life of the LED is greatly prolonged.
Description
Technical field
The present invention relates to LED with vertical structure with support with this LED with vertical structure that is configured to.
Background technology
In the prior art, light-emitting diode, particularly low power LED, for example
The LED with vertical structure of encapsulation, usually by support (separated electrode suppor and chip support comprise respectively head and downward two pins that extend to form of almost parallel from the head), be positioned at support (chip support) head wafer, seal wafer and two heads by transparent organic material for example the encapsulated member that consists of of epoxy resin consist of.This light-emitting diode is widely used in consisting of the energy-saving LED lamp.In order to improve the illumination life-span of this light-emitting diode, the inventor had before proposed a kind of inside and outside two encapsulated member schemes of sealing, namely utilize silica gel as the interior encapsulated member of sealing wafer and seal the outer encapsulating body of two heads with epoxy resin conduct, thereby solved with epoxy resin and used for a long time the light decay problem of generation, the illumination life-span of greatly having improved light-emitting diode as the light-emitting diode of single encapsulated member.Yet find that in practice this light-emitting diode that has improved the during normal use bonding wire of an electrode of wafer (a kind of superfine wire) disconnects easily and light-emitting diode is damaged.
Summary of the invention
The present invention is in order to solve the problems of the technologies described above, thereby its purpose is to provide the bonding wire that can not disconnect an electrode of wafer in a kind of normal use can improve the LED with vertical structure support in the useful life of light-emitting diode.Another purpose is to provide a kind of LED with vertical structure that comprises above-mentioned support.
The inventor disconnects phenomenon for this bonding wire and is studied, the reason that has found at first bonding wire to disconnect.Namely, in the scheme of prior art, in two sections of bonding wire are encapsulated in respectively, in the outer encapsulating body, when light-emitting diode is worked, the head of light-emitting diode is in higher temperature, when light-emitting diode is not worked, the head of light-emitting diode is in lower ambient temperature, the variation meeting of this large temperature difference because of in, the outer encapsulating body is that different materials thereby both temperatures coefficient are different and interior, on the interface that the outer encapsulating body joins bonding wire has been produced stress (adaptability to changes), logical repeatedly at light-emitting diode, in the outage use procedure, bonding wire can disconnect under the repeat function of this stress.
The inventor is according to above-mentioned research, and the LED with vertical structure that has proposed following structure is with support and comprise the LED with vertical structure of this support.
LED with vertical structure support of the present invention, this light-emitting diode comprises at least one wafer of illuminating, described support comprises electrode suppor and chip support, electrode suppor comprises for a head that is electrically connected with the bonding wire of an electrode of described wafer and the pin from a head to downward-extension, chip support comprises be used to another head that described wafer is installed with from downward another pin that extends of another head, it is characterized in that, one head and another head are connected into the mutually electricity isolation of another end face of an end face and another head of one and a head, the at least a portion that forms in described two end faces separately at described two end faces is the cup of the upward opening of the inner bottom surface of cup, and described inner bottom surface comprises the weld zone that a head is electrically connected with described bonding wire that is used for that is positioned at an end face, with the installing zone that described wafer is installed on another head that is used for that is positioned at another end face.
According to LED with vertical structure support of the present invention, the weld zone that is formed with the bonding wire on the electrode of cup and the installing zone of wafer and wafer all is positioned at the inner bottom surface of same cup, therefore, wafer and bonding wire can all be sealed by interior encapsulated member, thereby eliminated two kinds of bonding wire disconnection phenomenons that encapsulated member temperature coefficient difference causes, improved the normal service life with this light-emitting diode that is configured to.
LED with vertical structure of the present invention, comprise at least one effective wafer of light-emitting diodes, interior encapsulated member and outer encapsulating body, it is characterized in that, LED with vertical structure one of the support that also comprises a plurality of schemes of the present invention, described wafer is installed in described installing zone, the bonding wire of a described electrode of described wafer is welded in described weld zone, to the described interior encapsulated member of described cup filling, described interior encapsulated member and described cup are encapsulated in the described outer encapsulating body, so that any part of described bonding wire can not be arranged in the outer encapsulating body.
According to LED with vertical structure of the present invention, because the weld zone that the bonding wire of wafer and its electrode is electrically connected with head all is positioned at the inner bottom surface of cup, and the bonding wire of wafer and its electrode is all sealed by interior encapsulated member, thereby eliminated two kinds of bonding wire disconnection phenomenons that encapsulated member temperature coefficient difference causes, improved the life-span of the normal use of this light-emitting diode.
Description of drawings
Fig. 1 is the longitudinal section of the basic structure of demonstration one embodiment of the invention LED with vertical structure.
Fig. 2 is the vertical view of the basic structure medium-height trestle of Fig. 1, hatching non-sectioned wherein, expression different structure part.
Fig. 3 is the longitudinal section of the basic structure of demonstration another embodiment of the present invention LED with vertical structure.
Fig. 4 is the support exploded view before employed support in the basic structure of Fig. 3, its pin district do not bend, hatching part non-sectioned wherein, expression different structure.
Fig. 5 is the front view of the basic structure of the variation example of demonstration Fig. 3 and another embodiment shown in Figure 4.
Fig. 6 looks (sensing of arrow A) figure in the end that Fig. 5 changes routine medium-height trestle, hatching non-sectioned wherein, expression different structure.
Fig. 7 is that Fig. 5 changes the overlooking of routine medium-height trestle (sensing of arrow B) figure, hatching non-sectioned wherein, expression different structure.
Embodiment
Referring to Fig. 1-4, the invention provides 2 basic embodiment (embodiment and another embodiment) of LED with vertical structure, with LED with vertical structure among the two basic embodiment with 2 concrete structure examples of support (being designated hereinafter simply as " support "), namely in Fig. 1 and Fig. 3, remove the structure division behind wafer 9, interior encapsulated member 5 and the outer encapsulating body 6.Summarize these two concrete structure examples as seen, the support of basic structure of the present invention comprises electrode suppor 1 and chip support 2.Electrode suppor 1 comprises for a head 11 that is electrically connected with bonding wire 10 on the electrode of wafer 9 and the pin one 2 from a head 11 to downward-extension.Chip support 2 comprises for another head 21 that wafer 9 is installed and another pin two 2 from another head 21 to downward-extension.One head 11 and another head 21 are connected into another mutually electricity isolation of end face 211 of an end face 111 and another head 21 of one and a head 11, form with each end face 111 at two end faces 111 and 211, at least a portion of 211 (has illustrated the situation of whole end faces among Fig. 1 and Fig. 2, the situation of part end face has been shown among Fig. 3 and Fig. 4) be that the cup 3 of the upward opening of cup 3 inner bottom surface, described inner bottom surface comprise the weld zone (not label) that a head 11 is electrically connected with bonding wire 10 on the electrode that is used for that is positioned at an end face 111, see Fig. 1 with the installing zone 212(that wafer 9 is installed on another head 21 that is used for that is positioned at another end face 211).Installing zone 212 can be the part (see Fig. 4 label 3, it overlaps with label 212) that another end face 211 is arranged in described inner bottom surface, also can be the structure (see figure 1) at the bowl 212 of described part formation.
Referring to Fig. 1 and Fig. 2, they show the concrete structure example of support of the present invention.This concrete structure example shows, on the basis of the support of basic structure of the present invention, electrode suppor 1 and chip support 2 are separate on the space two independently members.Support further comprises the filling member 4 that insulating material consists of.Filling member 4 can form by two heads 11,21 being carried out Shooting Technique.Filling member 4 from two end faces 111,211 down, be enclosed in each head 11, at least a portion of 21 filling member 4 and be filled in the corresponding space of electrode suppor 1 and chip support 2 two heads 11 that separate and besieged, 21 part.But what Fig. 1 provided is the situation that two heads 11,21 are filled part 4 full encirclements and full packing.By described encirclement and described filling two heads 11,21 are connected and fixed and are integral.Cup 3 wall of cup 31 is extended upward by encirclement two heads 11 of filling member 4,21 periphery wall and consists of.
Referring to Fig. 3 and Fig. 4, they show another concrete structure example of support of the present invention.This another concrete structure example shows, on the basis of the support of basic structure of the present invention, support is made of a metal copper clad plate.This metal copper clad plate comprises metal substrate, for example aluminium base, the insulating barrier that joins above with metal substrate, and the metal foil layer, for example copper foil layer (not providing the label of metal copper clad plate and each layer thereof among the figure) that join above with insulating barrier.Referring to Fig. 4, it shows from Fig. 3 and overlooks and support exploded view before the pin district of support does not bend.This exploded view shows, is divided into a pin district 12A along the length direction of metal copper clad plate, the header area 1121 of joining with a pin district 12A, and another pin district 22A that joins with header area 1121.Header area 1121 is formed with the paper tinsel layer passage 8 that only cuts off metal foil layer on Width.Further, paper tinsel floor passage 8 can arrange near a pin district 12A.The metal copper clad plate is divided into as the boundary take paper tinsel floor passage 8 and comprises a pin district 12A at interior electrode suppor 1 and comprise another pin district 22A at interior chip support 2.Wherein, the header area of joining with a pin district 12A partly is a head 11 of electrode suppor 1, and the header area of joining with another pin district 22A partly is another head 21 of chip support 2.The outer surface that is positioned at the metal foil layer part of a head 11 consists of an end face 111, and the outer surface that is positioned at the metal foil layer part of another head 21 consists of another end face 211.With a pin district 12A and another pin district 22A towards the opposite side opposite with metal foil layer place one side of metal copper clad plate, be metal substrate lateral buckling (folding line that dotted line represents in referring to Fig. 4), so that the metal foil layer that the metal foil layer on the pin district 12A partly consists of on a pin one 2 and another pin district 22A partly consists of another pin two 2.In this concrete structure example, the said process that forms from support as seen, two heads 11, the 21st are connected and fixed by metal substrate and are integral.The installing zone that wafer 9 usefulness are installed is the part of another end face 211, or is formed on the recessed bowl (not shown) of another end face 211.Bonding wire 10 on one electrode of wafer 9 is electrically connected usefulness with a head 11 weld zone is the part of an end face 111.Two heads 11,21 form upward openings, inner bottom surface comprises the cup 3 of described installing zone and weld zone.
As preferably, cup 3 forms by header area 1121 punching presses to the metal copper clad plate.If installing zone is bowl, but also punching press forms.
Preferred as another, referring to Fig. 4, overlook the metal copper clad plate from the metal foil layer top, redundant insulating barrier part and metal substrate part are all arranged around the whole metal foil layer.The peripheral part that the insulating barrier part that this is redundant and metal substrate part can be removed by metal foil layer being carried out etching metal foil layer forms.
The concrete structure example of the support of Fig. 3 and Fig. 4 is more suitable for comprising the support that the metal copper clad plate of metal substrate, for example aluminium base that can not soldering consists of.
Referring to Fig. 5, Fig. 6 and Fig. 7, they show the variation example of Fig. 3 and another embodiment of Fig. 4.This variation example is formed with the substrate channel 88 that only cuts off metal substrate on width except the material of metal copper clad plate and profile and at a head 11 of electrode suppor 1, and all the other structures are identical with structure shown in Figure 4 with Fig. 3 (omitting the label of basic identical structure) basically in Fig. 5,6 and 7.But the supporting structure in this variation example more is applicable to metal foil layer and metal substrate all the metal copper clad plate, the support that for example double-side copper-applying plate consists of of soldering.Its support and Fig. 3 and concrete structure example shown in Figure 4 main distinction feature (see figure 6) structurally is, is formed with the substrate channel 88 that only cuts off metal substrate on width at a head 11 of electrode suppor 1.All there is the feature of redundant insulating barrier part and metal substrate part not essential in this variation example around the whole metal foil layer among Fig. 3 and Fig. 4, had better not (see figure 7), in order to avoid the increase operation.
Change the preference of example as this, another head 21 extensions of chip support 2 are further pointed at the both ends of substrate channel 88 along the insulation aspect, so that from end apparent direction (arrow A direction), described both ends extend in the paper tinsel layer passage 8 and the outside of the extension of substrate channel 88 at least, all are in communication with the outside, namely do not exist metal substrate.
Referring to Fig. 1, Fig. 3 and Fig. 5, they have provided each example routine with 2 concrete structures of support of the present invention and a variation example formation LED with vertical structure.Light-emitting diode in each example comprises at least one wafer 9 of illuminating, interior encapsulated member 5 and outer encapsulating body 6.Each light-emitting diode also comprises one of support of a plurality of schemes of the present invention.The support of a plurality of schemes comprises: the support of basic structure 2 concrete structure examples, changes example and the support of the preference that relates in them, and summarizes the support that forms according to their.Wafer 9 is installed in described installing zone.If installing zone is bowl, wafer 9 just is installed in the bowl.The bonding wire 10 of one electrode of wafer 9 is welded in described weld zone.To encapsulated member 5 in cup 3 fillings, interior encapsulated member 5 and cup 3 are encapsulated in the outer encapsulating body 6, so that any part of bonding wire 10 can not be arranged in outer encapsulating body 6.The weld zone that is electrically connected the inner bottom surface that is positioned at cup 3 by bonding wire 10 being welded in an end face 111 of the bonding wire 10 of one electrode of wafer 9 and a head 11 is realized.Interior encapsulated member 5 is filled in the cup 3 and can be from the rim of a cup of cup 3 protuberance upwards, and the pad of wafer 9, bonding wire 10 and bonding wire 10 and an end face 111 is encapsulated in the interior and interior encapsulated member 5 of cup 3.Interior encapsulated member 5 and cup 3 are sealed by outer encapsulating body 6.One head 11, another head 21 also can be sealed by outer encapsulating body 6.
As inside and outside encapsulated member 5,6 material, for example in encapsulated member 5 can be by the material that contains silicon, consist of such as silica gel, outer encapsulating body 6 can be by transparent organic material, consist of such as epoxy resin.
In the various embodiments described above and variation example, each center line of the center line of wafer 9, cup 3, interior encapsulated member 5 and outer encapsulating body 6 is consistent, i.e. coaxial line.
Below in conjunction with the embodiments the present invention is had been described in detail, but the details of describing among the embodiment should not consist of limitation of the invention.The present invention should be as the criterion with the marrow that appended claims was limited.
Claims (10)
1. LED with vertical structure support, described light-emitting diode comprises at least one wafer (9) of illuminating, described support comprises electrode suppor (1) and chip support (2), electrode suppor (1) comprises for a head (11) that is electrically connected with the bonding wire (10) of an electrode of wafer (9) and the pin (12) from a head (11) to downward-extension, chip support (2) comprises for another head (21) that wafer (9) is installed and another pin (22) from another head (21) to downward-extension, it is characterized in that, one head (11) and another head (21) are connected into the mutually electricity isolation of another end face (211) of an end face (111) and another head (21) of one and a head (11), at two end faces (111,211) form with two end faces (111,211) separately at least a portion is the cup (3) of upward opening of the inner bottom surface of cup (3) in, and described inner bottom surface comprises the weld zone that is electrically connected with bonding wire (10) for a head (11) that is positioned at an end face (111), with the installing zone (212) that wafer (9) is installed on another head (21) that is used for that is positioned at another end face (211).
2. support as claimed in claim 1, it is characterized in that, electrode suppor and chip support are separate on the space two independently members, described support further comprises the filling member (4) that insulating material consists of, this filling member is from described two end faces (111,211) down, with two at least part of heads (11,21) be enclosed in the described filling member, and be filled in space corresponding to the part with besieged two heads that electrode suppor and chip support separate, by described encirclement and described filling with two heads (11,21) be connected and fixed and be integral, the wall of cup (31) of cup (3) extends upward formation by the periphery wall of encirclement two heads of filling member (4).
3. support as claimed in claim 1 or 2 is characterized in that, described installing zone is from the recessed bowl (212) of described another end face (211).
4. support as claimed in claim 1, it is characterized in that, described support is made of a metal copper clad plate, this metal copper clad plate comprises metal substrate, but the metal foil layer of the insulating barrier that joins above with metal substrate and the soldering of joining above with insulating barrier, length direction along the metal copper clad plate is divided into a pin district (12A), the header area (1121) of joining with a pin district, with another pin district (22A) that joins with header area, header area is formed with the paper tinsel layer passage (8) that only cuts off metal foil layer on width, the metal copper clad plate is divided into as the boundary take paper tinsel floor passage and comprises a pin district at interior electrode suppor (1) and comprise another pin district in interior chip support (2), wherein, the header area of joining with a pin district partly is a head (11) of electrode suppor, the header area of joining with another pin district partly is another head (21) of chip support, the outer surface that is positioned at the metal foil layer part of a head consists of an end face (111), the outer surface that is positioned at the metal foil layer part of another head consists of another end face (211), with a pin district and with the metal foil layer place one side opposite opposite side of another pin district towards copper clad plate, be the metal substrate lateral buckling, so that the metal foil layer that the metal foil layer in the pin district partly consists of in a pin (12) and another pin district partly consists of another pin (22).
5. support as claimed in claim 4 is characterized in that, described cup (3) forms by the header area punching press to the metal copper clad plate.
6. support as claimed in claim 5 is characterized in that, overlooks a described metal copper clad plate from the metal foil layer top, and redundant insulating barrier part and metal substrate part are all arranged around the whole metal foil layer.
7. support as claimed in claim 5 is characterized in that, is formed with the substrate channel (88) that only cuts off metal substrate on width at a head of electrode suppor.
8. support as claimed in claim 7, it is characterized in that, another head extension of chip support is further pointed at the both ends of described substrate channel along the insulation aspect, so that from end apparent direction (A to), described both ends extend in the paper tinsel layer passage and the outside of the extension of substrate channel at least, all are in communication with the outside, namely do not exist metal substrate.
9. LED with vertical structure, comprise at least one effective wafer of light-emitting diodes, interior encapsulated member and outer encapsulating body, it is characterized in that, also comprise such as the described support of the arbitrary claim of claim 1-8, described wafer is installed in described installing zone, the bonding wire of a described electrode of described wafer is welded in described weld zone, to the described interior encapsulated member of described cup filling, described interior encapsulated member and described cup are encapsulated in the described outer encapsulating body, so that any part of described bonding wire can not be arranged in the outer encapsulating body.
10. light-emitting diode as claimed in claim 9 is characterized in that, described interior encapsulated member is made of the material that contains silicon, and described outer encapsulating body is made of transparent organic material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104870508A CN103035818A (en) | 2012-11-26 | 2012-11-26 | Support frame of light emitting diode (LED) with vertical structure and light emitting diode (LED) with vertical structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104870508A CN103035818A (en) | 2012-11-26 | 2012-11-26 | Support frame of light emitting diode (LED) with vertical structure and light emitting diode (LED) with vertical structure |
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| Publication Number | Publication Date |
|---|---|
| CN103035818A true CN103035818A (en) | 2013-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104870508A Pending CN103035818A (en) | 2012-11-26 | 2012-11-26 | Support frame of light emitting diode (LED) with vertical structure and light emitting diode (LED) with vertical structure |
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| CN (1) | CN103035818A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1373523A (en) * | 2002-01-11 | 2002-10-09 | 北京大学 | High-brightness nitride LED generating white light and its preparing process |
| US20050045902A1 (en) * | 2003-08-28 | 2005-03-03 | Ng Kee Yean | System and method for enhanced LED thermal conductivity |
| CN2722444Y (en) * | 2004-08-25 | 2005-08-31 | 薛信燊 | Light-emitting diode |
| US7347589B2 (en) * | 2001-12-29 | 2008-03-25 | Mane Lou | LED and LED lamp |
| CN201562692U (en) * | 2009-10-12 | 2010-08-25 | 金芃 | LED paster type encapsulation with roughened surface |
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2012
- 2012-11-26 CN CN2012104870508A patent/CN103035818A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7347589B2 (en) * | 2001-12-29 | 2008-03-25 | Mane Lou | LED and LED lamp |
| CN1373523A (en) * | 2002-01-11 | 2002-10-09 | 北京大学 | High-brightness nitride LED generating white light and its preparing process |
| US20050045902A1 (en) * | 2003-08-28 | 2005-03-03 | Ng Kee Yean | System and method for enhanced LED thermal conductivity |
| CN2722444Y (en) * | 2004-08-25 | 2005-08-31 | 薛信燊 | Light-emitting diode |
| CN201562692U (en) * | 2009-10-12 | 2010-08-25 | 金芃 | LED paster type encapsulation with roughened surface |
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Application publication date: 20130410 |