CN103065993B - A kind of detecting system of wafer defect and method - Google Patents
A kind of detecting system of wafer defect and method Download PDFInfo
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- CN103065993B CN103065993B CN201210585636.8A CN201210585636A CN103065993B CN 103065993 B CN103065993 B CN 103065993B CN 201210585636 A CN201210585636 A CN 201210585636A CN 103065993 B CN103065993 B CN 103065993B
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Abstract
The invention discloses a kind of wafer defect detecting system, including Fourier filters, it includes the multiple blocking units in the range of light intensity signal collection, the second blocking unit of the first blocking unit that described blocking unit arranges for first direction and/or second direction arrangement；Handover module, is connected with described fourier filter, according to detection direction, described blocking unit is switched to described first blocking unit or described second blocking unit；And detector, the light of detection Fourier filters transmission.The present invention further correspondingly provides a kind of wafer defect detection method.By wafer defect detecting system and the method for the present invention, a transmit process just can complete the wafer defect detection on different directions figure, improve equipment capacity.
Description
Technical field
The present invention relates to semiconductor integrated circuit field, particularly to a kind of system and method for detection image defect.
Background technology
In semiconductor integrated circuit manufactures, each technical process can introduce microgranule or defect because of a variety of causes, with
And super large-scale integration high integration and high performance demand are gradually increased, semiconductor technology is towards less feature chi
Very little development, these microgranules or defect also increasingly significant of the impact to integrated circuit quality, the necessity of online defects detection and
Importance grows with each passing day.During carrying out semiconductor fabrication process, position and analyze by defects detection is carried out to wafer
The reason cause defect, finds, according to reason, the generation that corresponding countermeasure avoids or reduces defect, thus ensureing product
Yield and reliability, fundamentally ensure yield and the quality producing, thus obtaining higher profit.
In the design of wafer, there are the regions of many patterned features repeating along X or Y-direction, such as SRAM,
The region of DRAM or flash, i.e. array area, remaining region is referred to as random or logic area.In order to realize more preferable sensitivity,
Advanced inspection system to check array area using Different Strategies.
Due to diffraction and light intensity superposition, if on object plane being equidistant striped or grid, then these stripeds
Or grid formed on focal plane is row's bright spot or one group of dot matrix, the position of each point is completely by the space frequency of striped or grid
Rate determines.As long as one piece of lamella lucida is put on focal plane, blacking on the position of each corresponding bright spot, do not allow at these bright spots
Light transmission, then obtain in image plane is exactly the picture rich in detail deleting those stripeds or grid, here it is Fourier filtering
Device.
Fig. 1 show the imaging system comprising Fourier filters in prior art.Light from object plane is received by lens 1
Collection, the target on object plane can be wafer.The light that collecting lens 1 is collected can include any suitable folding known in the art
Penetrate, reflect, scattering and diffraction light, the light that collecting lens 1 is collected passes through the Fourier plane of imaging system, i.e. focal plane, Fourier
Leaf wave filter is arranged on described focal plane to stop undesirable light.Light through Fourier filters is gathered by imaging lenses 2
On image plane, detector (not shown) can be arranged at described image plane Jiao, is not hindered by Fourier filters in order to detect
The light of gear.
Fig. 2 is the schematic diagram of the Fourier filters in existing Defect Scanning equipment image processing techniquess, generally includes list
One or more barrier ribs being configured to block a part of light in one direction, are reached by the spacing and position adjusting barrier rib
Filter the effect of the light of patterned features on wafer.However, this Fourier filters can only take into account a direction, such as
X direction repetitive pattern region was both existed on fruit wafer, there is y direction repetitive pattern region again, and needed to take into account x direction simultaneously
With y direction, then wafer is transferred in and out scanning machine (a notch down, a notch right) twice, reduces
Equipment capacity.
Content of the invention
Present invention is primarily targeted at overcoming the defect of prior art, provide a kind of complete with regard to energy by a transmit process
The system and method becoming wafer defect detection.
For reaching above-mentioned purpose, the present invention provides a kind of wafer defect detecting system, including：Fourier filters, its bag
Include the multiple blocking units in the range of light intensity signal collection, the first stop that described blocking unit arranges for first direction is single
Unit and/or the second blocking unit of second direction arrangement；Handover module, is connected with described Fourier filters, according to detection side
Switch to described first blocking unit or described second blocking unit to by described blocking unit；And detector, with described Fu
Vertical leaf wave filter is connected, and detects the light intensity signal of described Fourier filters transmission.
Preferably, described blocking unit is the first blocking unit and the arrangement of described second direction of described first direction arrangement
The second blocking unit.
Preferably, when described detection direction is described first direction, described handover module is by described first blocking unit
Outside mobile extremely described light intensity signal collection scope；When described detection direction is described second direction, described handover module will
Outside the mobile extremely described light intensity signal collection scope of described second blocking unit.
Preferably, when described detection direction is described first direction, described handover module is by described second blocking unit
Mobile to described light intensity signal collection, by mobile for described first blocking unit to described light intensity signal collection scope it
Outward so that described blocking unit is switched to described second blocking unit；When described detection direction is described second direction, described
Handover module, to described light intensity signal collection described second blocking unit is moved mobile for described first blocking unit
Move to outside described light intensity signal collection scope so that described blocking unit is switched to described first blocking unit.
Preferably, the second blocking unit that the first blocking unit of described first direction arrangement is arranged with described second direction
Positioned at Different Plane.
Preferably, described blocking unit is the first blocking unit or the arrangement of described second direction of described first direction arrangement
The second blocking unit.
Preferably, when described detection direction is described first direction, described first direction is arranged by described handover module
The first blocking unit rotate to described second direction, to switch to the second blocking unit of described second direction arrangement；Work as institute
State detection direction be described second direction when, described handover module by the second blocking unit that described second direction arranges rotate to
Described first direction, to switch to the first blocking unit of described first direction arrangement.
Preferably, described Fourier filters also include around described blocking unit and connect described blocking unit
Support unit；Described handover module is connected with described support unit.
Preferably, described handover module rotates described blocking unit by rotating described support unit.
The present invention further provides a kind of wafer defect detection method, it is applied to wafer defect detecting system, described detection
System includes Fourier filters, and it includes the multiple blocking units in the range of light intensity signal collection, described blocking unit
The first blocking unit for first direction arrangement and/or the second blocking unit of second direction arrangement, described detection method includes
Following steps：Described blocking unit is switched to by described first blocking unit or described second blocking unit according to detection direction；
And detect the light intensity signal of described Fourier filters transmission.
Preferably, described blocking unit is the first blocking unit and the arrangement of described second direction of described first direction arrangement
The second blocking unit, wherein according to detection direction described blocking unit is switched to described first blocking unit or described second
The step of blocking unit includes：When described detection direction is described first direction, by described first blocking unit movement to institute
State outside light intensity signal collection scope；When described detection direction is described second direction, described second blocking unit is moved
To outside described light intensity signal collection scope.
Preferably, described blocking unit is the first blocking unit and the arrangement of described second direction of described first direction arrangement
The second blocking unit, wherein according to detection direction described blocking unit is switched to described first blocking unit or described second
The step of blocking unit includes：When described detection direction is described first direction, by described second blocking unit movement to institute
Within the scope of stating light intensity signal collection, by mobile for described first blocking unit to outside described light intensity signal collection scope；Work as institute
When stating detection direction for described second direction, by mobile for described first blocking unit to described light intensity signal collection,
By mobile for described second blocking unit to outside described light intensity signal collection scope.
Preferably, the second blocking unit that the first blocking unit of described first direction arrangement is arranged with described second direction
Positioned at Different Plane.
Preferably, described blocking unit is the first blocking unit or the arrangement of described second direction of described first direction arrangement
The second blocking unit, wherein according to detection direction described blocking unit is switched to described first blocking unit or described second
The step of blocking unit includes：When described detection direction is described first direction, by the first resistance of described first direction arrangement
Gear finite element rotation extremely described second direction, to switch to the second blocking unit of described second direction arrangement；When described detection side
To during for described second direction, the second blocking unit of described second direction arrangement is rotated to described first direction, to switch
The first blocking unit for the arrangement of described first direction.
Preferably, described Fourier filters also include around described blocking unit and connect described blocking unit
Support unit.
Preferably, by rotating described support unit, described blocking unit is switched to described first blocking unit or institute
State the second blocking unit.
Preferably, described second direction is vertical with described first direction.
It is an advantage of the current invention that by switching the first blocking unit of first direction arrangement or the of second direction arrangement
Two blocking units, can flexibly select light intensity signal during defects detection to stop the direction of filtering, to obtain on different directions figure
Wafer defect.Further, the present invention can complete on wafer different directions figure in wafer a transmit process
Defects detection, improves equipment capacity.
Brief description
Fig. 1 is the optical imaging system schematic diagram comprising Fourier filters in prior art.
Fig. 2 is the schematic diagram of Fourier filters in prior art.
Fig. 3 is the block chart of embodiment of the present invention wafer defect detecting system.
Fig. 4 and Fig. 5 is the schematic diagram of Fourier filters in first embodiment of the invention wafer defect detecting system.
Fig. 6 and Fig. 7 is the schematic diagram of Fourier filters in second embodiment of the invention wafer defect detecting system.
Fig. 8 is the flow chart of embodiment of the present invention wafer defect detection method.
Fig. 9 is the flow chart of another embodiment of the present invention wafer defect detection method.
Figure 10 is the flow chart of another embodiment of the present invention wafer defect detection method.
Specific embodiment
For making present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.Certainly the invention is not limited in this specific embodiment, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Refer to Fig. 3, it is shown as the block chart of wafer defect detecting system of the present invention, wafer defect detecting system includes
Fourier filters 1, handover module 2 and detector 3.In the present invention, Fourier filters are commonly defined as photoresistance and stop dress
Put, stop undesirable light intensity signal in the focal plane of photosystem, the light through Fourier filters is focused on by imaging lenses
On image plane, detector 3 is arranged at image plane, in order to detect the light intensity signal not stopped by Fourier filters.Fourier
Leaf wave filter 1 includes the multiple blocking units in the range of light intensity signal collection, and blocking unit arranges first for first direction
Blocking unit and/or second direction arrange the second blocking unit, by these different directions blocking units, achievable Fourier filter
The stop filter function of ripple device.Handover module 2 is connected with Fourier filters 1, is switched to blocking unit according to detection direction
First blocking unit or the second blocking unit, thus select the blocking unit of second direction or the blocking unit counterweight of first direction
The light intensity signal of multiple periodic pattern feature is filtered.Detector 3 is connected with Fourier filters 2, detection Fourier filter
The light intensity signal of ripple device 2 transmission, thus detect the wafer defect on first direction or second direction figure.
Due in the design of wafer, there is the region of the patterned features along X or Y-direction repetition period property, relatively
Good, first direction is vertical with second direction, thus wafer is carried out with the defect on X-direction or Y-direction repetition period property figure
During detection, handover module can be more convenient flexibly blocking unit to be switched to relevant position.
Refer to Fig. 4, in the first embodiment of the present invention, Fourier filters 1 are included positioned at light intensity signal collection model
Multiple blocking units in enclosing, blocking unit be multiple the first blocking units 101 arranging in X direction and multiple along Y-direction row
Second blocking unit 102 of row.As shown in figure 5, when detection direction is Y-direction, namely it is intended to detect Y-direction repetition period property
During wafer defect on figure, handover module is by mobile for the second blocking unit 102 arranging along Y-direction to light intensity signal collection model
Outside enclosing, blocking unit is switched to the first blocking unit 101 arranging in X direction, from wafer Y-direction repetition period property figure
The light intensity signal of shape feature is filtered by the first blocking unit 101, thus the defect on repetition period property figure can in the Y direction
Easily detected by detector 3 from Fourier filters 1 transmission.When scarce to the wafer on Y-direction repetition period property figure
After sunken detection finishes, switch unit 2 can again by mobile for the second blocking unit 102 to light intensity signal collection, by the
One blocking unit 101 moves to outside light intensity signal collection scope, thus again blocking unit is switched to the second blocking unit
102, then carry out the wafer defect detection on X-direction repetition period property figure.Likewise, when detection direction is X-direction, that is to say
When wanting to detect the wafer defect on X-direction repetition period property figure, handover module 2 is by the blocking unit arranging in X direction 101
The mobile blocking unit only arranging along Y-direction to outside light intensity signal collection scope so that in the range of light intensity signal collection
102, thus blocking unit is switched to the blocking unit 102 of Y-direction arrangement.Blocking unit 102 can filter the X from wafer
The light intensity signal of the repetition period property patterned features in direction, therefore, the defect on X-direction repetition period property figure is through Fu
Can more easily be detected by detector 3 after the transmission of vertical leaf wave filter 1.Wherein, handover module 2 can be to stop list by first
Unit 101 or second blocking unit 102 from two side shiftings to light intensity signal collection scope outside, or only from a side shifting to light intensity believe
Outside number acquisition range, the present invention is not limited to this.
As can be seen here, by the wafer defect detecting system of the present invention, can be once to wafer X-direction repetitive pattern area
Domain and Y-direction repetitive pattern region carry out defects detection.Preferably, the stop list of the X-direction arrangement in Fourier filters 1
The blocking unit 102 of unit 101 and Y-direction arrangement is in Different Plane, thus carrying out different directions repetitive pattern to wafer
During the defects detection in change region, handover module can be more convenient neatly to adjust blocking unit 101 and blocking unit 102, with right
It switches over.
Please continue to refer to Fig. 6 and Fig. 7, it show the wafer defect detecting system of another embodiment of the present invention.
Fourier filters 1 include the multiple blocking units in the range of light intensity signal collection, and blocking unit is along X side
The first blocking unit 201 or multiple the second blocking unit 202 along Y-direction arrangement to arrangement.In the present embodiment, to stop
Unit is along as a example the second blocking unit 201 of Y-direction arrangement, when detecting direction is along Y-direction, namely is intended to detect Y
During wafer defect on direction repetition period property figure, handover module 2 rotates the second blocking unit 202 to X-direction, to switch
For the first blocking unit 201 arranging in X direction, therefore from the light intensity of the repetition period property patterned features of wafer Y-direction
Signal can filtered by the first blocking unit 201 after fourier transform, enhances the signal noise ratio of defect, thus increasing
The probability that defect on Y-direction repetition period property figure is detected.Preferably, Fourier filters 1 are also included around resistance
Keep off around unit and connect the support unit 203 of blocking unit.Handover module 2 is connected with support unit 203, is supported by rotation
Unit 203 blocking unit is switched over, to realize the stop filter function of Fourier filters.Blocking unit can be located at and props up
The center of support unit 203, wherein support unit can be circular rings or square loop, and the present invention is not limited to this.Detector 3 and Fu
Vertical leaf wave filter 1 is connected, the light intensity signal of detection Fourier filters 1 transmission.Therefore, when detecting that direction is Y-direction, it is derived from
The light intensity signal of the repetition period property patterned features of wafer Y-direction is filtered, and the defect on Y-direction repetition period property figure
To be detected by detector 3 from Fourier filters 1 transmission.
Likewise, when detecting that direction is X-direction, the first blocking unit 201 rotates to Y-direction and is switched to the second resistance
Gear unit 202, the light intensity signal from the repetition period property patterned features of wafer X-direction is filtered, X-direction repetition period property
Defect on figure is then detected by detector 3 from Fourier filters 1 transmission, therefore by the wafer defect detection of the present invention
System, can carry out defects detection to repetition periodic pattern region in different directions by the switching of blocking unit.
Below by the present invention be applied to above-mentioned wafer defect detecting system wafer defect detection method in addition detailed
Illustrate,.
The wafer defect detection method of the present invention comprises the following steps：
Blocking unit is switched to by the first blocking unit or the second blocking unit according to detection direction；And
The light intensity signal of detection Fourier filters transmission.
Refer to Fig. 8, it show the flow chart of embodiment of the present invention wafer defect detection method, the wafer of the present embodiment
Defect inspection method is applied to the wafer defect detecting system of first embodiment of the invention, and this detecting system includes Fourier filtering
Device, it includes the first blocking unit of multiple first direction arrangements and multiple second party in the range of light intensity signal collection
To the second blocking unit of arrangement, preferably, first direction is vertical with second direction.
The step of detection method includes：
Second resistance of step S1, the first blocking unit first direction being arranged according to detection direction or second direction arrangement
Gear unit movement is to outside light intensity signal collection scope.
Step S2, the light intensity signal of detection Fourier filters transmission.
Specifically, when wanting to detect the defect on wafer first direction repetition period property figure, that is to say detection direction
During for first direction, the first blocking unit movement that first direction is arranged is to outside light intensity signal collection scope so that light intensity
Second blocking unit of only second direction arrangement in signal acquisition range, because wafer first direction repetition period property is graphical
The light intensity signal of feature is filtered by the second blocking unit, enhances the signal noise ratio of defect, thus increasing first direction weight
The probability that defect in multiple periodic pattern is detected.
When wanting to detect the defect on wafer second direction repetition period property figure, that is to say that detection direction is second direction
When, the second blocking unit movement that second direction is arranged is to outside light intensity signal collection scope so that light intensity signal collection model
In enclosing, the first blocking unit of only first direction arrangement, graphically special from wafer second direction repetition period property in order to stop
The signal levied, the defect on the repetition period property figure of wafer second direction can be more easily detected.Wherein,
During by the blocking unit movement of first direction or second direction arrangement to outside light intensity signal collection scope, can be by from both sides
Blocking unit is all removed, or only from side by the mode of whole for blocking unit removals, the present invention is not limited to this.It is worth note
Meaning, the second blocking unit of the first blocking unit of first direction arrangement and second direction arrangement can be located at Different Plane
Interior, therefore wafer is carried out different directions repetition period property figure defects detection when, can be more convenient neatly to adjust difference
The blocking unit of plane is so as to move to relevant position.As known from the above, the defect inspection method of the present invention disclosure satisfy that difference
The defects detection demand of direction repetition period property figure.
In a preferred embodiment of the invention, refer to Fig. 9, graphical to wafer first direction repetition period property when wanting
When region and second direction repetition period property patterned area carry out defects detection, comprise the following steps：
Step S11 first, the first blocking unit movement that first direction is arranged to outside light intensity signal collection scope,
Step S12, the light intensity signal of detection Fourier filters transmission is to obtain wafer first direction repetition period property figure
The defect information in shape region.
Then, step S13, within the scope of the first blocking unit that first direction is arranged is moved back to light intensity signal collection, and
The second blocking unit movement that second direction is arranged to outside light intensity signal collection scope,
Carry out step S14, the light intensity signal of detection Fourier filters transmission again, thus obtain wafer second direction repeating
The defect information in periodic pattern region.Therefore, by the defect inspection method of the present invention, only wafer need to be transferred in and out sweeping
Retouch board once it becomes possible to detect the defect of different directions repetition period property patterned area on wafer.
Refer to Figure 10, it show the flow chart of the wafer defect detection method of another embodiment of the present invention, this enforcement
The wafer defect detection method of example is applied to the wafer defect detecting system of second embodiment of the invention, and this detecting system includes Fu
Vertical leaf wave filter, it includes the multiple blocking units in the range of light intensity signal collection, and blocking unit arranges for first direction
The first blocking unit or second direction arrangement the second blocking unit, first direction is vertical with second direction.When positioned at light intensity
During the first blocking unit that the multiple blocking units in signal acquisition range arrange for first direction, the step bag of detection method
Include：
Step S21, rotates the first blocking unit that first direction arranges to second direction according to detection direction, to switch
The second blocking unit for second direction arrangement；
Step S22, the light intensity signal of detection Fourier filters transmission.
Specifically, when wanting to detect the defect on wafer first direction repetition period property figure, that is to say detection direction
During for first direction, the first blocking unit that first direction is arranged rotates to second direction so that light intensity signal collection scope
Blocking unit is not existed on interior first direction, therefore blocking unit is switched to the second blocking unit of second direction arrangement, resistance
Gear is from the light intensity signal of the repetition period property patterned features of wafer first direction.Then the light to Fourier filters transmission
Strong signal is detected, thus improving the probability that the defect on wafer first direction repetition period property figure is detected.Relatively
Good, the mesh of rotation blocking unit can be reached by rotating the support unit being looped around around blocking unit and being attached thereto
's.Blocking unit can be located at the center of support unit, and support unit can be circular rings or square loop, and the present invention is not limited to
This.
Likewise, when wanting to detect the defect on wafer second direction repetition period property figure, that is to say that detection direction is
During second direction, by rotate support unit the second blocking unit that second direction arranges is rotated to first direction, laggard
Row subsequent detection.
To sum up, wafer defect detecting system proposed by the invention and method, by switching the first stop of first direction
Unit or the second blocking unit of second direction, can flexibly select to stop the direction of filtering, to obtain on different directions figure
Wafer defect.Further, the present invention can complete on wafer different directions figure in wafer a transmit process
Defects detection, improves equipment capacity.
Although the present invention is disclosed as above with preferred embodiment, so described many embodiments are illustrated only for the purposes of explanation
, it is not limited to the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention
Some changes and retouching, the protection domain that the present invention is advocated should be to be defined described in claims.
Claims (16)
1. a kind of wafer defect detecting system is it is characterised in that include：
Fourier filters, it includes the multiple blocking units in the range of light intensity signal collection, and described blocking unit is the
First blocking unit of one direction arrangement and/or the second blocking unit of second direction arrangement；
Handover module, is connected with described Fourier filters, according to detection direction, described blocking unit is switched to described first
Blocking unit or described second blocking unit；And
Detector, is connected with described Fourier filters, detects the light intensity signal of described Fourier filters transmission.
2. wafer defect detecting system according to claim 1 it is characterised in that
Described blocking unit is the first blocking unit of described first direction arrangement and the second stop of described second direction arrangement
Unit；
When described detection direction is described first direction, described handover module is by mobile for described first blocking unit to described light
Outside strong signal acquisition range；
When described detection direction is described second direction, described handover module is by mobile for described second blocking unit to described light
Outside strong signal acquisition range.
3. wafer defect detecting system according to claim 1 it is characterised in that
Described blocking unit is the first blocking unit of described first direction arrangement and the second stop of described second direction arrangement
Unit；
When described detection direction is described first direction, described handover module is by mobile for described second blocking unit to described light
Within strong signal acquisition range, by outside mobile for described first blocking unit extremely described light intensity signal collection scope with by described resistance
Gear unit switches to described second blocking unit；
When described detection direction is described second direction, described handover module is by mobile for described first blocking unit to described light
Within strong signal acquisition range, by outside mobile for described second blocking unit extremely described light intensity signal collection scope with by described resistance
Gear unit switches to described first blocking unit.
4. wafer defect detecting system according to claim 1 is it is characterised in that described blocking unit is described first party
To the first blocking unit of arrangement and the second blocking unit of described second direction arrangement；First resistance of described first direction arrangement
Gear unit is located at Different Plane with the second blocking unit of described second direction arrangement.
5. wafer defect detecting system according to claim 1 it is characterised in that
Described blocking unit is the first blocking unit of described first direction arrangement or the second stop of described second direction arrangement
Unit；
When described detection direction is described first direction, the first stop that described first direction is arranged by described handover module is single
Unit rotates to described second direction, to switch to the second blocking unit of described second direction arrangement；
When described detection direction is described second direction, the second stop that described second direction is arranged by described handover module is single
Unit rotates to described first direction, to switch to the first blocking unit of described first direction arrangement.
6. wafer defect detecting system according to claim 1 is it is characterised in that described blocking unit is described first party
To the first blocking unit of arrangement or the second blocking unit of described second direction arrangement；Described Fourier filters also include ring
Around described blocking unit and connect the support unit of described blocking unit；Described handover module and described support unit phase
Even.
7. wafer defect detecting system according to claim 6 is it is characterised in that described handover module passes through described in rotation
Support unit is to rotate described blocking unit.
8. wafer defect detecting system according to claim 1 is it is characterised in that described second direction and described first party
To vertical.
9. a kind of wafer defect detection method, is applied to wafer defect detecting system, and described detecting system includes Fourier filtering
Device, it includes the multiple blocking units in the range of light intensity signal collection, described blocking unit arrange for first direction
Second blocking unit of one blocking unit and/or second direction arrangement is it is characterised in that described detection method includes following step
Suddenly：
Described blocking unit is switched to by described first blocking unit or described second blocking unit according to detection direction；And
Detect the light intensity signal of described Fourier filters transmission.
10. the detection method of wafer defect according to claim 9 is it is characterised in that described blocking unit is described the
First blocking unit of one direction arrangement and the second blocking unit of described second direction arrangement, wherein according to detection direction by institute
Stating blocking unit switches to described first blocking unit or the step of described second blocking unit to include：
When described detection direction is described first direction, by mobile for described first blocking unit to described light intensity signal collection model
Outside enclosing；
When described detection direction is described second direction, by mobile for described second blocking unit to described light intensity signal collection model
Outside enclosing.
The detection method of 11. wafer defects according to claim 9 is it is characterised in that described blocking unit is described the
First blocking unit of one direction arrangement and the second blocking unit of described second direction arrangement, wherein according to detection direction by institute
Stating blocking unit switches to described first blocking unit or the step of described second blocking unit to include：
When described detection direction is described first direction, by mobile for described second blocking unit to described light intensity signal collection model
Within enclosing, by mobile for described first blocking unit to outside described light intensity signal collection scope；
When described detection direction is described second direction, by mobile for described first blocking unit to described light intensity signal collection model
Within enclosing, by mobile for described second blocking unit to outside described light intensity signal collection scope.
The detection method of 12. wafer defects according to claim 10 it is characterised in that the arrangement of described first direction the
One blocking unit is located at Different Plane with the second blocking unit of described second direction arrangement.
The detection method of 13. wafer defects according to claim 9 is it is characterised in that described blocking unit is described the
First blocking unit of one direction arrangement or the second blocking unit of described second direction arrangement, wherein according to detection direction by institute
Stating blocking unit switches to described first blocking unit or the step of described second blocking unit to include：
When described detection direction is described first direction, the first blocking unit of described first direction arrangement is rotated to described
Second direction, to switch to the second blocking unit of described second direction arrangement；
When described detection direction is described second direction, the second blocking unit of described second direction arrangement is rotated to described
First direction, to switch to the first blocking unit of described first direction arrangement.
The detection method of 14. wafer defects according to claim 13 is it is characterised in that described Fourier filters also wrap
Include around described blocking unit and connect the support unit of described blocking unit.
The detection method of 15. wafer defects according to claim 14 is it is characterised in that pass through to rotate described support unit
So that described blocking unit to be switched to described first blocking unit or described second blocking unit.
The detection method of 16. wafer defects according to claim 9 is it is characterised in that described second direction and described the
One direction is vertical.
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| CN201210585636.8A CN103065993B (en) | 2012-12-28 | 2012-12-28 | A kind of detecting system of wafer defect and method |
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| CN201210585636.8A CN103065993B (en) | 2012-12-28 | 2012-12-28 | A kind of detecting system of wafer defect and method |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854674A (en) * | 1997-05-29 | 1998-12-29 | Optical Specialties, Inc. | Method of high speed, high detection sensitivity inspection of repetitive and random specimen patterns |
| US6020957A (en) * | 1998-04-30 | 2000-02-01 | Kla-Tencor Corporation | System and method for inspecting semiconductor wafers |
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2012
- 2012-12-28 CN CN201210585636.8A patent/CN103065993B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854674A (en) * | 1997-05-29 | 1998-12-29 | Optical Specialties, Inc. | Method of high speed, high detection sensitivity inspection of repetitive and random specimen patterns |
| US6020957A (en) * | 1998-04-30 | 2000-02-01 | Kla-Tencor Corporation | System and method for inspecting semiconductor wafers |
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