CN103199171A - Power type light-emitting diode (LED) chip of N type transparent electrode structure - Google Patents
Power type light-emitting diode (LED) chip of N type transparent electrode structure Download PDFInfo
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Abstract
The invention belongs to the technical field of semiconductor photoelectronic device manufacturing, in particular to a power type light-emitting diode (LED) chip of an N type transparent electrode structure. The specific structure of the power type LED chip comprises a substrate, a buffering layer, an intrinsic layer on the buffering layer, an N type layer on the intrinsic layer, a luminous layer on the N type layer, a P type layer on the luminous layer, a current blocking layer on the P type layer, transparent conducting layers, a P electrode, N type transparent electrodes and N type welding spot electrodes, wherein the transparent conducting layers and the P electrode are arranged on P type layer and the current blocking layer, the N type transparent electrodes and the N type welding spot electrodes are arranged on an N type table-board. According to the N type transparent electrodes manufacture through the power type LED chip, light blocking and light absorption of large-area N electrode metal in a traditional power type chip can be effectively improved and luminance of the power type chip can be improved. Meanwhile, the power type LED chip of the N type transparent electrode structure has the advantages of being simple in process and manufacturing and greatly reducing production cost due to the fact that expensive metal electrodes are replaced by the transparent electrodes.
Description
Technical field
The invention belongs to semiconductor photoelectronic device manufacturing technology field, be specifically related to a kind of power-type LED chip of N-type transparent electrode structure.
Background technology
LED is a kind of opto-electronic device that electric energy is changed into luminous energy.It has that volume is little, the life-span long, pollution-free, vibration resistance, photoelectric conversion efficiency advantages of higher.At present, it has a wide range of applications in fields such as full-color demonstration, Landscape Lighting, traffic lights, backlights.
For present power-type LED chip, generally be to be substrate with the sapphire.Because sapphire is insulator, when making electrode, P and N electrode should be positioned at the homonymy of epitaxial loayer, and therefore for the power-type LED chip of Sapphire Substrate, the design of electrode structure is most important, and can be related to electric current spread equably.In general, when optimizing electrode structure, should be noted that aspect 3: 1) use the N electrode retaining collar around the method for P electrode, can allow electric current on big as far as possible area, enter the N electrode by the P electrode like this, increase effective length of illumination; 2) N should equate with the P distance between electrodes, and electric current is distributed as far as possible uniformly; 3) the N distribution of electrodes is in the outside, and this is with 1) reason identical.Concerning gallium nitride based LED, because the refractive index of gallium nitride material is 2.4, be 24.62 ° corresponding to the angle of total reflection, the light that therefore only is positioned at this light cone could be from the surperficial outgoing of chip.Under the ideal situation, according to calculating, for the luminous point in the luminescent layer six outgoing light cones in front and back are up and down arranged, so total light extraction efficiency of gallium nitride based LED
If only consider the bright dipping of four sides in ideal conditions, then its light extraction efficiency can reach 18.2%, and outgoing from the side is only very considerable in ideal conditions.Yet in the power-type LED chip of reality, because electrode structure complexity, the N-type electrode retaining collar is around chip periphery, even luminous energy is from the side derived well, the N-type electrode that the light of these outgoing is also looked about in chip periphery stops, and the N electrode of nowadays speaking more greatly all is to utilize the very high metal material of absorption coefficient to make, and therefore causes the light of chip sides outgoing to be absorbed by opaque N electrode, for the power-type LED chip, greatly reduce the luminosity of chip.
Summary of the invention
Adopt the very high opaque electrode of absorption coefficient to be made at the N-type electrode in the existing power-type LED chip, cause the light of outgoing from the side to be blocked and absorb, the structure that the objective of the invention is to propose a kind of N-type transparency electrode is with the absorption that changes traditional N-type electrode pair light and stop, thereby improves the luminosity of chip.
To achieve these goals, technical scheme provided by the invention is:
A kind of power-type LED chip of N-type transparent electrode structure, it comprises substrate, resilient coating, intrinsic layer, n type semiconductor layer, luminescent layer and p type semiconductor layer from bottom to up successively, the p type semiconductor layer upper end also is provided with transparency conducting layer and current barrier layer, transparency conducting layer all contacts with p type semiconductor layer with current barrier layer, and the side of current barrier layer except the upper and lower end face all surrounded by transparency conducting layer, the upper surface part of current barrier layer is covered by transparency conducting layer, and current barrier layer is not connected with the P electrode by the upper surface part that transparency conducting layer covers; Described n type semiconductor layer is the boss shape, the part side periphery that boss protrudes is provided with the N-type transparency electrode, the middle fluting of part that boss is outstanding, this groove is covered by the N-type transparency electrode, and the luminescent layer of the top of this groove, p type semiconductor layer and current blocking all have corresponding groove layer by layer, and the infall with the middle fluting of boss around the N-type transparency electrode is provided with N-type solder joint place electrode.
Further, the N-type transparency electrode is distributed in the periphery of chip and the fluting place in the middle of the projection section, this groove is positioned at above the n type semiconductor layer, and the lower surface of the electrode 10b of N-type electrode pads place contacts with n type semiconductor layer, as Fig. 1 b, under do not have transparency electrode, just the EDGE CONTACT of the electrode 10b of N-type electrode pads place is to transparency electrode, N electrode pads place deposit metal electrodes alloy, N-type electrode pads place both and under n type semiconductor layer form good ohmic contact, form excellent contact with the transparency electrode of edge again.
Further, the width of described N-type transparency electrode is 5um ~ 20um.
Further, the width of described N-type transparency electrode 10a is 12um.
Further, the edge of described N-type transparency electrode is 2um ~ 10um far from the horizontal range at p type semiconductor layer edge.
Further, the edge of described N-type transparency electrode is 5um. far from the horizontal range at p type semiconductor layer edge
Further, the thickness of described N-type transparency electrode is 1500 dusts ~ 5000 dusts.
Further, the thickness of described N-type transparency electrode is 3100 dusts.
Further, the N-type transparency electrode adopts and the transparency conducting layer identical materials, can produce the N-type transparency electrode in the process of making transparency conducting layer, can not increase manufacturing process.
Preferably, do not have transparency electrode under the N electrode pads place, have only EDGE CONTACT to the N-type transparency electrode, increased the ohmic contact of N electrode pads place and n type semiconductor layer.
Preferably, the N-type transparent electrode structure replaces traditional metal electrode, has reduced production cost.
N-type transparency electrode of the present invention and transparency conducting layer use identical materials, can make the N-type transparency electrode in the evaporation transparency conducting layer, can not increase extra technological process.The N-type transparency electrode replaces expensive metal electrode, has reduced production cost.This N-type transparent electrode structure can avoid traditional N-type metal electrode to the stopping and absorb of light, thereby has improved the luminosity of chip.
Preferably, do not have transparency electrode under the N electrode pads place, have only EDGE CONTACT to the N-type transparency electrode, increased the ohmic contact of N electrode pads place and n type semiconductor layer.The N-type transparency electrode replaces traditional metal electrode, has reduced production cost.
Compare with existing structure, the invention has the beneficial effects as follows: this N-type transparency electrode can not stop and absorb the light of deriving from the side, thereby improved the luminosity of chip effectively, and this employing of N-type transparent electrode structure and transparency conducting layer identical materials, can not increase manufacturing process.Locate not have transparent electrode structure under the N electrode pads place, have only edge to touch the N-type transparency electrode, increase the contact performance of N electrode pads place and n type semiconductor layer and edge transparency electrode, replaced expensive metal electrode with the N-type transparency electrode simultaneously, reduced production cost.
Description of drawings
Fig. 1 a is the vertical view of the power-type LED chip of a kind of N-type transparent electrode structure of the present invention.
Fig. 1 b is the partial enlarged drawing (A-A cutaway view) that comprises the electrode 10b of N-type solder joint place among Fig. 1.
Fig. 2 is a kind of profile (B-B cutaway view) of power-type LED chip left view of N-type transparent electrode structure.
Fig. 3 is the profile of LED epitaxial slice structure.
Fig. 4 is the profile behind the N-type mesa structure that forms by etching on the basis of Fig. 3.
Fig. 5 is the profile after the basis of Fig. 4 forms the current barrier layer structure.
Fig. 6 is the profile after the basis of Fig. 5 forms transparency conducting layer and N-type transparent electrode structure.
Fig. 7 is the profile with power-type LED chip of N-type transparent electrode structure.
Among the figure: 1-substrate, 2-resilient coating, 3-intrinsic layer, 4-N type semiconductor layer, 5-luminescent layer, 6-P type semiconductor layer, 7-current barrier layer, 8-transparency conducting layer, 9-P electrode, 10a-N type transparency electrode, 10b-N type solder joint place electrode.
Embodiment
Below in conjunction with accompanying drawing enforcement of the present invention is described further, but enforcement of the present invention and protection are not limited thereto.
As Fig. 1 a, Fig. 2, a kind of power-type LED chip of N-type transparent electrode structure comprises substrate 1 from bottom to up successively, resilient coating 2, intrinsic layer 3, n type semiconductor layer 4, luminescent layer 5 and p type semiconductor layer 6, p type semiconductor layer 6 upper ends also are provided with transparency conducting layer 8 and current barrier layer 7, transparency conducting layer 8 all contacts with p type semiconductor layer 6 with current barrier layer 7, and the side of current barrier layer 7 except the upper and lower end face all surrounded by transparency conducting layer 8, the upper surface part of current barrier layer 7 is covered by transparency conducting layer 8, and current barrier layer 7 is not connected with the P electrode by the upper surface part that transparency conducting layer 8 covers; Described n type semiconductor layer 4 is the boss shape, the part side periphery that boss protrudes is provided with N-type transparency electrode 10a, the middle fluting of part that boss is outstanding, this groove is covered by N-type transparency electrode 10a, and the luminescent layer 5 of the top of this groove, p type semiconductor layer 6 and current barrier layer all have corresponding groove for 7 layers, and the infall with the middle fluting of boss around the N-type transparency electrode 10a is provided with the electrode 10b of N-type solder joint place.
The N-type transparency electrode is distributed in the periphery of chip and the fluting place in the middle of the projection section, this groove is positioned at above the n type semiconductor layer, and the lower surface of the N-type electrode pads 10b of place contacts with n type semiconductor layer, as Fig. 1 b, under do not have transparency electrode, just the EDGE CONTACT of the N-type electrode pads 10b of place is to transparency electrode, N electrode pads place deposit metal electrodes alloy, N-type electrode pads place both and under n type semiconductor layer form good ohmic contact, form excellent contact with the transparency electrode of edge again
In the middle of the production process of reality, the needs according to producing also comprise the DBR(distributed Blatt reflective that is formed under the substrate 1) passivation layer of layer and chip surface.After substrate 1 adopts the method for chemistry or mechanical polishing to be thinned to desired thickness, back of the body plating DBR reflector below substrate 1, the power-type LED chip for positive assembling structure can reflect back the light of directive substrate 1, thereby has improved the light extraction efficiency of chip.And for the passivation layer of chip surface, can avoid LED to be short-circuited in the course of the work on the one hand, chip is played a protective role; By the refractive index of control passivation layer, can reduce the loss of critical angle on the other hand.Among the present invention, the N-type transparency electrode can be utilized the light of directive side better, thereby has improved the luminosity of chip.Referring to Fig. 1, the width 10a of described N-type transparent electrode structure is between the 5um to 20um, and preferred width is 12um; Described N-type transparent electrode structure is 2um to 10um from the distance at p type semiconductor layer edge.Preferred distance is 5um.Referring to Fig. 2, the thickness of described N-type transparent electrode structure is 1500 dust to 5000 dusts, and preferred thickness is 3100 dusts.
The manufacture craft of the open said structure of the present invention.The first step is put into MOCVD(metallo-organic compound vapour phase epitaxy with Sapphire Substrate 1), alkyl compound steam and the nonmetallic hydride gas of feeding III family metallic element by pyrolytic reaction, generate III-V compounds of group under the high temperature.By being deposited on top grown buffer layer successively 2, intrinsic layer 3, n type semiconductor layer 4, luminescent layer 5, the p type semiconductor layer 6 of substrate 1, grow the LED epitaxial slice structure, referring to shown in Figure 3.Second step, form the mesa structure of making N-type transparency electrode 10a by etching, by graph exposure semiconductor planar technology, adopt the ICP(inductively coupled plasma) lithographic technique, etch the N-type table top, the thickness of the marginal portion that etches adopts the method for chemical corrosion to erode mask layer less than the thickness of the core that is not etched then, draw N-type mesa structure (n type semiconductor layer is the boss shape), referring to shown in Figure 4.The 3rd step, formation current barrier layer structure on P type layer, the material that is used as this current barrier layer can be SiO
2, SiON, Si
xN
yDeng, after cleaning dries up, this current barrier layer can be by the PECVD(plasma enhanced chemical vapor deposition) technology realizes, pass through lithographic process then, the partial corrosion that to not do current barrier layer by chemical corrosion falls again, removes mask layer then, clean dry after, obtain the current barrier layer structure, referring to shown in Figure 5.The 4th step, utilize evaporator or sputter coating method evaporation ITO(tin indium oxide on the table top of p type semiconductor layer and n type semiconductor layer) film, by photoetching, burn into cleaning, alloy processing procedure, obtain structure of transparent conductive layer 8 and N-type transparent electrode structure 10a, referring to shown in Figure 6 then.The 5th step, by evaporation, gold-tinted, peel off, technology such as cleaning, on the transparency conducting layer 8 and corresponding current barrier layer 7 directly over form the P electrode 9 of metal electrode structure, edge in n type semiconductor layer and N-type transparency electrode forms the N-type solder joint electrode 10b of place, material as this electrode can be Cr/Pt/Au alloy, Ni/Au alloy, Ti/Al/Ti/Au alloy or aforesaid combination in any, so just produced the power-type LED chip with N-type transparent electrode structure, referring to shown in Figure 7.
The above is only with convenient explanation patent of the present invention, and in not breaking away from the spiritual category of patent of the present invention, that is familiar with that those skilled in the art of this technology does simple in a disguised form still belongs to protection scope of the present invention with modification.
Claims (5)
1. the power-type LED chip of a N-type transparent electrode structure, it is characterized in that comprising successively from bottom to up substrate, resilient coating, intrinsic layer, n type semiconductor layer, luminescent layer and p type semiconductor layer, the p type semiconductor layer upper end also is provided with transparency conducting layer and current barrier layer, transparency conducting layer all contacts with p type semiconductor layer with current barrier layer, and the side of current barrier layer except the upper and lower end face all surrounded by transparency conducting layer, the upper surface part of current barrier layer is covered by transparency conducting layer, and current barrier layer is not connected with the P electrode by the upper surface part that transparency conducting layer covers; Described n type semiconductor layer is the boss shape, the part side periphery that boss protrudes is provided with the N-type transparency electrode, the middle fluting of part that boss is outstanding, this groove is covered by the N-type transparency electrode, and the luminescent layer of the top of this groove, p type semiconductor layer and current blocking all have corresponding groove layer by layer, and the infall with the middle fluting of boss around the N-type transparency electrode is provided with N-type solder joint place electrode.
2. the power-type LED chip of a kind of N-type transparent electrode structure according to claim 1 is characterized in that: the N-type transparency electrode is distributed in the periphery of chip and the fluting place in the middle of the projection section, and this groove is positioned at above the n type semiconductor layer; The lower surface of N-type electrode pads place electrode contacts with n type semiconductor layer, under do not have transparency electrode, just the EDGE CONTACT of N-type electrode pads place electrode is to transparency electrode, N electrode pads place deposit metal electrodes alloy, N-type electrode pads place both and under n type semiconductor layer form good ohmic contact, form excellent contact with the transparency electrode of edge again.
3. the power-type LED chip of a kind of N-type transparent electrode structure according to claim 1, it is characterized in that: the width of described N-type transparency electrode is 5um ~ 20um.
4. the power-type LED chip of a kind of N-type transparent electrode structure according to claim 1, it is characterized in that: the edge of described N-type transparency electrode is 2um ~ 10um far from the horizontal range at p type semiconductor layer edge.
5. the power-type LED chip of a kind of N-type transparent electrode structure according to claim 1, it is characterized in that: the thickness of described N-type transparency electrode is 1500 dusts ~ 5000 dusts.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275446A (en) * | 2017-07-25 | 2017-10-20 | 厦门乾照光电股份有限公司 | A kind of LED chip and preparation method thereof |
| CN110085718A (en) * | 2014-07-01 | 2019-08-02 | 首尔伟傲世有限公司 | Light emitting device |
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| CN201812849U (en) * | 2010-09-03 | 2011-04-27 | 湘能华磊光电股份有限公司 | Electrode structure of light-emitting diode (LED) chip and LED chip structure containing same |
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| CN203218311U (en) * | 2012-12-14 | 2013-09-25 | 华南理工大学 | Power type LED chip of N type transparent electrode structure |
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Patent Citations (6)
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| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| US20070023771A1 (en) * | 2003-09-01 | 2007-02-01 | Sang Kee Kim | Led and fabrication method thereof |
| CN101937958A (en) * | 2010-08-23 | 2011-01-05 | 厦门市三安光电科技有限公司 | Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency |
| CN201812849U (en) * | 2010-09-03 | 2011-04-27 | 湘能华磊光电股份有限公司 | Electrode structure of light-emitting diode (LED) chip and LED chip structure containing same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110085718A (en) * | 2014-07-01 | 2019-08-02 | 首尔伟傲世有限公司 | Light emitting device |
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Application publication date: 20130710 |