CN103290476A - Crucible for growing silicon carbide monocrystal and having multiple growth cavities - Google Patents
Crucible for growing silicon carbide monocrystal and having multiple growth cavities Download PDFInfo
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- CN103290476A CN103290476A CN2012100508306A CN201210050830A CN103290476A CN 103290476 A CN103290476 A CN 103290476A CN 2012100508306 A CN2012100508306 A CN 2012100508306A CN 201210050830 A CN201210050830 A CN 201210050830A CN 103290476 A CN103290476 A CN 103290476A
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Abstract
The invention belongs to the technical field of crystal growth, relates to a crucible structure for growing silicon carbide monocrystals by a physical vapor transport technology, and particularly relates to a crucible for growing silicon carbide monocrystals and having multiple growth cavities. According to the crucible provided by the invention, a material cavity structure of the crucible is in design of multiple growth areas and unified material cavity. The crucible provided by the invention is characterized by adopting the design of multiple growth areas and unified material cavity. In the crucible, multiple silicon carbide monocrystals can be grown synchronously in the same growth period. By adopting the crucible design provided by the invention to grow silicon carbide monocrystals, the growth efficiency can be effectively improved, the growth time is saved, and the crystal cost is reduced. Compared with the traditional method, the monocrystal growth efficiency is improved by 2-3 times on the premise of same equipment configuration.
Description
Technical field
The invention belongs to the crystal technique field, be specifically related to a kind of crucible structure that transports the technology growth single-crystal silicon carbide based on physical vapor.
Background technology
Silicon carbide (SiC) is a kind of compound semiconductor, has the performance of a lot of excellences, and its thermal conductivity height reaches 5.0W/cm (being higher than any known metal), therefore is suitable for very much high temperature, high-power electronic device field.In addition, silicon carbide also has high chemical stability and anti-irradiation ability, with the lattice match degree of GaN also higher, be the desirable substrate material of making high brightness GaN photodiode.Silicon carbide is universally acknowledged third generation semiconductor material.
The synthetically grown technology of carborundum crystals has had the history in more than 100 year so far.It can trace back to 1891 the earliest, and Edward's Gyorgy Gurics Ah and Sen (Edward Goodrich Acheson) (1856～1931) has used carbon and pure aluminium silicate as raw material when improving the diamond abrasive making method, has obtained a large amount of SiC first.This method still is applied to making the SiC abrasive material so far.J.A. rein in jasmine (J.A.Lely) and in plumbago crucible, obtained the measured SiC crystal of crystalline (U.S. Patent No. 2845364) with nineteen fifty-five.1978, the Yu.M. thyrode people such as (Yu.M.Tairo) improved in the method for reining in jasmine (Lely), uses auxiliary bulk SiC monocrystalline (" crystal growth magazine " (J.Crystal Growth) 52,209～212,1978 that obtained of seed crystal; " crystal growth magazine " (J.Crystal Growth) 52,146～150,1981).This method that thyrode people such as (Tairo) uses is called as improved Le Lifa, and this method still is being widely used so far, and the physical vapor of growing high-quality SiC crystal transports (PVT) technology and just is based on improved Le Lifa at present.
The straight wall crucible that uses conventional design is in the Medium frequency induction growth furnace during grow silicon carbide crystals, be subject to crucible design and insulation construction, usually can only obtain 1 silicon carbide crystal ingot in each growth cycle, and be subject to the growth method of silicon carbide crystal ingot, the length of each crystal ingot can only reach 30～40mm at most.The intrinsic problem of this of silicon carbide monocrystal growth has increased the growth of silicon carbide cost greatly, make the holding at high price of silicon carbide wafer, limit the spread overwide areas of silicon carbide wafer in the scope of whole market, limited the extensive utilization of carborundum crystals greatly.Growth cost that we can say carborundum crystals is the important factor that determines the silicon carbide prospect.
Summary of the invention
The objective of the invention is to overcome the defective of prior art, provide a kind of based on physical vapor transport technology, the crucible of a plurality of silicon carbide crystal ingots of can growing simultaneously design.
On the one hand, the invention provides and a kind ofly transport the crucible of technology growth single-crystal silicon carbide based on physical vapor, wherein, described crucible is many growth chamber structure.
In an embodiment of the invention, described crucible is to have the split type multi-segment structure of independently expecting chamber and growth chamber.Preferably, in described split type multi-segment structure, connect by screw thread or bench port between each section.
In an embodiment of the invention, described crucible has 3～5 independently growth chamber.Preferably, the diameter of described growth chamber is 50mm～80mm.
In an embodiment of the invention, the height of described growth chamber surpasses 20% of described crucible total height, and described material chamber height is not less than 50% of described crucible total height.
In an embodiment of the invention, processing raw material of described crucible is high-purity, high-compactness graphite, and its total impurities content is less than 100ppm, and density is greater than 1.8g/cm
3, void content is less than 15%.
In the crucible design of the present invention, have a plurality of independently growth chamber, these growth chamber share identical material chamber, and described growth chamber and material chamber are preferably separately independently.
In the crucible design of the present invention, crucible material chamber and growth chamber are the two-part separate structure, connect by screw thread or bench port between these two portions (section).
Crucible of the present invention is right cylinder, external diameter 150～250mm, total height 200～300mm.
The growth chamber of crucible of the present invention is many growth chamber structure independently, 3～5 of growth chamber quantity, growth chamber internal diameter 50～80mm, growth chamber height 30～80mm.
In the crucible design of the present invention, material chamber internal diameter is that 130～230mm, material chamber height are not less than 50% of crucible total height.
The height of upper chamber's (growth chamber section) surpasses 20% of described crucible total height in the crucible design of the present invention.
In the crucible design of the present invention, the crucible raw material uses the graphite block body of high purity, high-compactness to process.High purity refers to total impurities content less than 100ppm, and high-compactness refers to that density is greater than 1.8g/cm
3, void content is less than 15%.
Crucible of the present invention is made and is used high precision machine tool to carry out, and the working accuracy error of crucible is less than 0.1mm.
Crucible design of the present invention can be used for 2 inches of growth diameters or above single-crystal silicon carbide body.Many growth chamber designs can effectively reduce growth cost, the raising growth efficiency of carborundum crystals so that growth obtains a plurality of crystal in the same growth cycle.
Description of drawings
Fig. 1 is the employed crucible of conventional PVT technology growth SiC monocrystalline.
Wherein, 1: ruhmkorff coil; 2: sidewall of crucible; 3: growth raw material; 4: the seed crystal holder.
Fig. 2 is the synoptic diagram of crucible in one embodiment of the present invention.
Wherein, 1: crucible growth chamber section; 2: crucible material chamber; 3: growth chamber 1; 4: growth chamber 2; 5: growth chamber 3; 6: growth chamber; 7: the seed crystal holder.
Embodiment
The present invention will be described in detail hereinafter with reference to embodiment that the present invention provides.The present invention can embody with multiple different form, not should be understood to be subject to the embodiment that this provides.Just the opposite, providing these embodiment is in order to make scope of the present invention pass to those skilled in the art fully.
Fig. 1 is the existing employed crucible of conventional PVT technology growth SiC monocrystalline.Wherein the sidewall of crucible thickness in crucible material chamber equates.
Adopt crucible design shown in Figure 2 to carry out the PVT crystal growth.This crucible is divided into upper chamber's (growth chamber section) and lower chambers (material chamber).Crucible two chambers (that is, two sections) external diameter up and down equates, is 150mm.Described crucible has 3 independently growth chamber, and each growth chamber internal diameter is 53mm, and material chamber internal diameter is 130mm.Crucible top cover and bottom thickness are 5mm, and the seed crystal frame thickness that seed crystal is installed is 5mm.The crucible total height is 200mm, and wherein the height of growth chamber section is 50mm, and material chamber height is 150mm.Two portions are by being threaded.
Load the 6H-SiC powder of 500 microns of particle diameters in the material chamber of crucible shown in Figure 2.2400 ℃ of control crucible bottom observed temperatures, 2280 ℃ of top cover observed temperatures, 30 holders (Torr) of growth furnace internal pressure, growth 80 as a child can obtain 3 diameters in 3 growth chamber be that 53mm, length are the 6H-SiC crystal ingot of 20mm.Material chamber surplus stock takes out back smoothness, no recrystallization phenomenon.Back 5 the rocking curve halfwidths of crystal ingot section test are 20 second of arcs ± 5 second of arcs, and microchannel density is less than 5/cm
2
Claims (7)
1. one kind transports the crucible of technology growth single-crystal silicon carbide based on physical vapor, it is characterized in that described crucible is many growth chamber structure.
2. crucible as claimed in claim 1 is characterized in that, described crucible is to have the split type multi-segment structure of independently expecting chamber and growth chamber.
3. crucible as claimed in claim 2 is characterized in that, in described split type multi-segment structure, connects by screw thread or bench port between each section.
4. as each described crucible of claim 1-3, it is characterized in that described crucible has 3～5 independently growth chamber.
5. as each described crucible of claim 1-3, it is characterized in that the diameter of described growth chamber is 50mm～80mm.
6. as each described crucible of claim 1-3, it is characterized in that the height of described growth chamber surpasses 20% of described crucible total height, and described material chamber height is not less than 50% of described crucible total height.
7. as each described crucible of claim 1-3, it is characterized in that processing raw material of described crucible is high-purity, high-compactness graphite, its total impurities content is less than 100ppm, and density is greater than 1.8g/cm
3, void content is less than 15%.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210050830.6A CN103290476B (en) | 2012-02-29 | 2012-02-29 | There is the crucible of the growing silicon carbide single crystal of many growth chamber |
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| CN201210050830.6A CN103290476B (en) | 2012-02-29 | 2012-02-29 | There is the crucible of the growing silicon carbide single crystal of many growth chamber |
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| CN103290476A true CN103290476A (en) | 2013-09-11 |
| CN103290476B CN103290476B (en) | 2016-05-18 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105463572A (en) * | 2015-12-10 | 2016-04-06 | 上海爱我珠宝有限公司 | Silicon carbide gemstone manufacturing process |
| CN111188089A (en) * | 2018-11-14 | 2020-05-22 | 昭和电工株式会社 | Apparatus for producing SiC single crystal and method for producing SiC single crystal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
| CN1308690A (en) * | 1998-07-14 | 2001-08-15 | 西门子公司 | Method and device for producing at least one silicon carbide monocrystal |
| US20060254505A1 (en) * | 2005-05-13 | 2006-11-16 | Tsvetkov Valeri F | Method and apparatus for the production of silicon carbide crystals |
| CN102925967A (en) * | 2011-08-10 | 2013-02-13 | 李汶军 | Method for growing silicon carbide mono-crystals through multi-crucible physical vapor transport technology, and device thereof |
-
2012
- 2012-02-29 CN CN201210050830.6A patent/CN103290476B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6056820A (en) * | 1998-07-10 | 2000-05-02 | Northrop Grumman Corporation | Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide |
| CN1308690A (en) * | 1998-07-14 | 2001-08-15 | 西门子公司 | Method and device for producing at least one silicon carbide monocrystal |
| US20060254505A1 (en) * | 2005-05-13 | 2006-11-16 | Tsvetkov Valeri F | Method and apparatus for the production of silicon carbide crystals |
| CN102925967A (en) * | 2011-08-10 | 2013-02-13 | 李汶军 | Method for growing silicon carbide mono-crystals through multi-crucible physical vapor transport technology, and device thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105463572A (en) * | 2015-12-10 | 2016-04-06 | 上海爱我珠宝有限公司 | Silicon carbide gemstone manufacturing process |
| WO2017096745A1 (en) * | 2015-12-10 | 2017-06-15 | 上海爱我珠宝有限公司 | Process for manufacturing silicon carbide gemstones |
| CN105463572B (en) * | 2015-12-10 | 2018-01-09 | 上海爱我珠宝有限公司 | A kind of manufacture craft of gemstones formed of silicon carbide |
| CN111188089A (en) * | 2018-11-14 | 2020-05-22 | 昭和电工株式会社 | Apparatus for producing SiC single crystal and method for producing SiC single crystal |
| CN111188089B (en) * | 2018-11-14 | 2022-02-25 | 昭和电工株式会社 | Apparatus for producing SiC single crystal and method for producing SiC single crystal |
| US11306412B2 (en) | 2018-11-14 | 2022-04-19 | Showa Denko K.K. | SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method |
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Effective date of registration: 20201119 Address after: No. 1814, Lianshan District, Shanghai Patentee after: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. Address before: 201800 No. 215 Chengbei Road, Shanghai, Jiading District Patentee before: R&D CENTER OF SHANGHAI INSTITUTE OF CERAMICS Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20210918 Address after: 244000 Xihu 3rd road, Tongling Economic Development Zone, Anhui Province Patentee after: Anhui microchip Changjiang semiconductor materials Co.,Ltd. Address before: No. 181, Shanlian Road, Baoshan District, Shanghai 200444 Patentee before: SHANGHAI SHENHE THERMO-MAGNETICS ELECTRONICS Co.,Ltd. |