CN103311439B - Thin film photoconductive detector and manufacturing method and application thereof - Google Patents
Thin film photoconductive detector and manufacturing method and application thereof Download PDFInfo
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Abstract
The invention discloses a thin film photoconductive detector and a manufacturing method and application thereof. The thin film photoconductive detector comprises a substrate, a carrier transport layer, an electrode layer and a light absorption layer from bottom to top, wherein the electrode layer consists of an anode layer and a cathode layer positioned on the same layer. The detector integrates high migration ratio of an inorganic material and high light absorptivity of an organic material; when light irradiates onto an organic layer of a photoelectric device, the uppermost organic material layer absorbs light to generate carriers; and by virtue of energy level difference between an inorganic layer and the organic layer and the concentration difference of the carriers, the photo-generated carriers enter the inorganic material layer and can be fast collected by electrodes, thereby having large G and R values. Meanwhile, due to high migration rate of the inorganic material, the light current response time and the fall time of the device are greatly shortened, and therefore the sensitivity of the thin film photoconductive device is improved; and the thin film photoconductive detector has an important application value.
Description
Technical field
The present invention relates to a kind of thin film photoconductive detector and preparation method thereof and application.
Background technology
At present, known photoconductive detector structure is made up of the light-sensitive layer of two horizontal electrodes and centre.Photoconductive device is connected into loop and adds a bias field, when incident light contacts with detector, the light-sensitive layer of detector inside produces electron hole pair, electron hole pair is separated and is collected by electrode and forms photoelectric current under the effect of electric field, characterizes the intensity of light and size can be used for carrying out the directions such as light detection, image imaging or bio-sensing by the intensity of photoelectric current.Therefore device is quite important to the susceptibility of light, and we characterize such Species sensitivity by two important parameters usually: responsiveness R and optical gain G.R represents a ratio of the photoelectric current of generation and the luminous intensity of introducing, and what G represented is that device often absorbs the inner electric charge flow through of a photonic device.
These two values can represent with formula below:
(EQE is outer quantum effect, and λ is lambda1-wavelength, and h is Planck's constant, and c is the light velocity, and q is the quantity of electric charge, and L is device channel length (two interelectrode distance), and E is additional electric field strength, μ
nelectron mobility, μ
pbe hole mobility, τ is the life-span of photoexciton, t
nelectron transit time and t
pit is the hole transit time)
Enough large G and R value is required for photoconductive device, some present devices are mainly on 1-dimention nano device architecture, because: nanostructure has large specific area and surface to there is a large amount of deep energy levels to stick electric charge thus can strengthen life-span of photoexciton, and one-dimentional structure can reduce the dimension of exciton diffusion thus the transit time of reducing exciton increases R and G simultaneously.Up to the present, no matter be that organic or inorganic 1-dimention nano device is obtained for very high G and R value.But comparatively speaking, thin film photoconductive device is more practical, and be more prone to simple and large area preparation.But G and the R value of thin-film device, relative to very little 1-dimention nano device, which has limited their development.The reason that G and R value is little is mainly that conventional device structure can not overcome the shortcoming of material itself.For organic assembly, because there is material to have low dielectric constant, the combination of exciton can be very large, and at normal temperatures, such exciton binding energy can not be separated.The heterojunction structure that the Donor acceptor developing use afterwards combines, makes a large amount of free photo-generated carriers be separated by introducing a large amount of Donor acceptor interfaces.Bringing another large impact is like this exactly that network structure in heterojunction adds exciton two interelectrode propagation distances, result in low-down exciton transition rate.Therefore, find out that G and R can be very low by formula (1), (2).For inorganic device, inorganic material has very high mobility, but its absorptivity is low especially, makes thin-film device have a very low EQE.A lot of work is had now to be the extinction improving inorganic material.Utilize the quantum skin effect of quantum dot and dimensional effect that inorganic material can be made to absorb more light, the photoelectric device based on quantum dot can represent large R and G value, but also can be far short of what is expected relative to 1-dimention nano device performance.Therefore, the thin film photoconductive device utilizing simple method to prepare high R and G value is the direction of making great efforts now.
Summary of the invention
The object of this invention is to provide a kind of thin film photoconductive detector and preparation method thereof and application.
Thin film photoconductive detector provided by the invention, comprises substrate, carrier blocking layers, electrode layer and light-absorption layer from the bottom to top successively;
Described electrode layer is made up of the anode layer and negative electrode layer being positioned at same layer, and the level interval of described anode layer and negative electrode layer is 10-1000 μm, is specially 80 μm.
Above-mentioned detector also can only be made up of above-mentioned each layer.
Wherein, the material forming described flexible substrates is selected from least one in polyimides and polyester film;
The relative molecular mass of described polyimides is 10000-100000g/mol, is specially 45000g/mol;
The relative molecular mass of described polyester is 10000-100000g/mol, is specially 70000g/mol.
The material forming described carrier blocking layers is selected from least one in zinc oxide, titanium oxide and Graphene;
The thickness of described carrier blocking layers is 10-200nm, is specially 50nm.
The material forming described electrode layer is selected from least one in aluminium, gold, zinc and silver;
The thickness of described electrode layer is 30-200nm, is specially 50nm.
The material forming described light-absorption layer is selected from least one in light-absorbing polymeric and extinction Small molecular;
Described light-absorbing polymeric is specifically selected from least one in P3HT, PBDTTT-C and PTB7; The relative molecular mass of described P3HT is 40000g/mol; The relative molecular mass of described PBDTTT-C is 40000 ~ 80000g/mol, is specially 60000g/mol; The relative molecular mass of described PTB7 is 10000 ~ 60000g/mol;
Described extinction Small molecular is specially PCBM; The relative molecular mass of described PCBM is 910.88g/mol;
The structural formula of P3HT, PBDTTT-C, PTB7 and PCBM as shown in Figure 3.
The thickness of described light-absorption layer is 50-200nm, is specially 150nm.
The method of the described detector of preparation provided by the invention, comprises the steps:
1) carrier blocking layers is prepared on the substrate;
2) on described carrier blocking layers, electrode layer is prepared;
3) on described electrode layer, prepare light-absorption layer, obtain described detector.
In said method, the method preparing described carrier blocking layers, electrode layer and light-absorption layer is conventional method, specifically optional any one in spin-coating method, ink-jet printing process and vacuum vapour deposition;
In described spin-coating method, mainly may be used for preparing carrier blocking layers and light-absorption layer, the concentration of solution used is 1-100mg/ml, is specially 40mg/ml; The speed of spin coating is 500-10000rpm, is specially 1000rpm;
In described ink-jet printing process, mainly may be used for preparing carrier blocking layers, electrode layer and light-absorption layer, the concentration of ink is 1-100mg/ml, is specially 20mg/ml;
In described sputtering method, mainly may be used for preparing carrier blocking layers and electrode layer, the vacuum degree of sputtering is 10
-4-10
-5pa, is specially 1 × 10
-4pa;
In described vacuum vapour deposition, mainly may be used for preparing carrier blocking layers, electrode layer and light-absorption layer, the vacuum degree of evaporation carrier blocking layers or electrode layer is 10
-4-10
-5pa, is specially 1 × 10
-4pa;
The vacuum degree of evaporation light-absorption layer is 10
-5-10
-6pa, is specially 1 × 10
-5pa.
In step 1) before, also first substrate can be done following preliminary treatment: by described substrate priority deionized water, acetone and isopropyl alcohol cleaning, then dry.
In addition; the detector that the invention described above provides, preparing the application of at least one in photodetector, image image device and biology sensor and photodetector, image image device and the biology sensor containing described detector, also belongs to protection scope of the present invention.Wherein, described incident light is selected from least one in ultraviolet light, visible ray, infrared light and X-ray.
Instant invention overcomes existing thin film photoconductive detector R and the low-down deficiency of G value, provide that a kind of structure is simple, preparation method is easy, have the double-deck thin film photoconductive detector of organic inorganic hybridization of very high responsiveness and optical gain.The structure of this detector is organic inorganic hybridization double-decker, utilizes organic material extinction inorganic material to transmit charge carrier, and the electrode be clipped in the middle of materials at two layers can collect electricity and hole.Because the extinction of organic material is very strong, just there is very high external quantum efficiency, and inorganic material has very strong carrier mobility to make the transit time of exciton reduce, simultaneously double-decker adds the quantity that the probability of recombination that extra interface can reduce photo-generated carrier too increases charge carrier, the photo-detector that above-mentioned reason makes has very large optical gain, thus improves the responsiveness of photo-detector to light.
This detector combines the high mobility of inorganic material and the high extinction of organic material, when on the organic layer that illumination is mapped to photoelectric device, the organic material extinction of the superiors produces charge carrier, due to the concentration difference of the energy level difference between organic layer and inorganic layer and charge carrier, photo-generated carrier enters inorganic material layer, and very fast being collected by electrode thus have very large G and R value.Meanwhile, because the mobility that inorganic material is high, the photocurrent response time of the device made and die-away time also reduce greatly, thus improve the sensitivity of thin film light guide device.
Accompanying drawing explanation
Fig. 1 is the structural representation of thin film photoconductive detector part.
Fig. 2 is the ESEM structural map of device architecture.
Fig. 3 is the chemical structural formula (P3HT, PBDTTT-C, PTB7 and PCBM) of organic light absorbent in embodiment.
Fig. 4 is the abosrption spectrogram of zinc oxide used and organic material in embodiment 1.
Fig. 5 is the comparison diagram of the mobility of zinc oxide used and organic material in embodiment 1.
Fig. 6 be in embodiment 1 photogenerated current with the variation diagram of zinc oxide mobility.
Fig. 7 is the comparison diagram of organic material single layer device and organic material inorganic material bi-layer devices photocurrent response time and die-away time in embodiment 1.
Fig. 8 is the comparison diagram that in embodiment 1, organic material single layer device and organic material inorganic material bi-layer devices R value and G value change with applied voltage.
Fig. 9 be in embodiment 1 organic material single layer device and organic material inorganic material bi-layer devices R value with the comparison diagram of the change of monochromatic wavelength.
Figure 10 is the absorption spectrum comparison diagram of P3HT:PCBM, PBDTTT-C:PCBM and PTB7:PCBM in embodiment 2.
Figure 11 is the comparison diagram that the relation of organic material inorganic material bi-layer devices R and wavelength in embodiment 2 changes with the change of organic material.
Embodiment
Below in conjunction with specific embodiment, the present invention is further elaborated, but the present invention is not limited to following examples.Described method is conventional method if no special instructions.Described raw material all can obtain from open commercial sources if no special instructions.
P3HT is purchased from Luminescence Technology Corporation company, and production code member is LT-S909;
PBDTTT-C is purchased from Luminescence Technology Corporation company, and production code member is LT-S981;
PTB7 is purchased from 1-material company, and production code member is OS0007;
PCBM is purchased from Luminescence Technology Corporation company, and production code member is LT-S905.
Embodiment 1,
1) as shown in Figure 1, zinc acetate is dissolved in methyl cellosolve the solution obtaining 40mg/ml concentration, 1000rpm spin coating 60s is in the substrate of glass 5 of 3mm and the 500 DEG C of 1h of annealing obtain the carrier blocking layers 4 that thickness are 50nm at thickness.
The material forming carrier blocking layers is zinc oxide;
2) in step 1) vacuum evaporation anode layer 2 and negative electrode layer 2 respectively on gained carrier blocking layers, positive pole and negative pole length are 8800 μm, and two interelectrode distances 80 μm, vacuum degree during vacuum evaporation is 1 × 10
-4pa.
The material forming anode layer and negative electrode layer is all aluminium;
Thickness is 50nm;
3) in step 2) on gained anode layer and negative electrode layer spin coating prepare one deck light-absorption layer, concrete steps comprise: after the PCBM of to be the P3HT of 40000g/mol and relative molecular mass by relative molecular mass be 910.88g/mol mixes with weight ratio 1: 1, be dissolved in o-dichlorohenzene the solution obtaining 40mg/ml concentration, anneal substrate after 1000rpm spin coating 60s 100 DEG C of 10min, obtain the light-absorption layer 3 that thickness is 150nm, obtain thin film photoconductive detector provided by the invention;
Be illustrated in figure 2 the ESEM structural map of this detector.
During test, this detector is connected with external circuit 6.Testing light source used is tungsten halogen lamp white light source, and light intensity is 0.25mW/cm
2, the light intensity of monochromatic source used is 10.6 μ W/cm
2. all light intensity are calibrated by irradiatometer before testing.Bias voltage added by the test of all optical detections is 10V.The substrate that the test of mobility is used is Si/SiO
2, wherein Si is N-shaped heavy doping, SiO
2thick 300nm, electric capacity is 10nF.
Be illustrated in figure 4 the absorption spectrum comparison diagram of zinc oxide and P3HT: PCBM, zinc oxide has absorption and extinction is little at ultraviolet light, and P3HT:PCBM has very strong very wide absorption in ultraviolet-visible district.Simultaneously because zinc oxide extinction is very low, thus its single layer device not with discussion.
Be illustrated in figure 5 the test comparison figure of the mobility of zinc oxide and P3HT:PCBM, zinc oxide be electron transport material, its mobility is much larger than the mobility of P3HT:PCBM.
Photogenerated current is as shown in Figure 6 linear with zinc oxide mobility, and can prove photogenerated current mainly in zinc oxide film transmission, zinc oxide film plays a carrier transport, and zinc oxide mobility is larger, and the photogenerated current that device produces is larger.
As shown in Figure 7, be individual layer P3HT:PCBM device (not having ZnO layer) in contrast and the photocurrent response time of double-deck ZnO/P3HT:PCBM device provided by the invention and the comparison diagram of die-away time.Because the high mobility of ZnO, the photocurrent response time of the device made and die-away time also reduce greatly, thus improve the sensitivity of thin film light guide device.
Be illustrated in figure 8 the comparison diagram of organic material single layer device and organic material inorganic material bi-layer devices R value and G value.At identical conditions, detector provided by the invention, its device performance is compared with conventional monolayers device architecture display performance, G and R significantly improves four to five orders of magnitude, and can compared with the performance of monodimension nanometer material.
Be illustrated in figure 9 organic material single layer device and the organic material inorganic material bi-layer devices R value figure with the change of wavelength.Under identical lambda1-wavelength, its device performance is compared with organic material single layer device performance, G and R also significantly improves four to five orders of magnitude, and can compared with the performance of monodimension nanometer material.
It should be noted that only entering from organic material layer of test usually, when substrate is transparent material, light also can be injected from substrate direction.
Embodiment 2,
According to the step of embodiment 1, only by step 3) replace with following steps:
3) in step 2) on gained anode layer and negative electrode layer spin coating prepare one deck light-absorption layer, concrete steps comprise: after the PCBM of to be the PBDTTT-C of 60000g/mol and relative molecular mass by relative molecular mass be 910.88g/mol mixes with weight ratio 1: 1.5, be dissolved in o-dichlorohenzene the solution obtaining 40mg/ml concentration, anneal substrate after 1000rpm spin coating 60s 100 DEG C of 10min, obtain the light-absorption layer 3 that thickness is 150nm, obtain thin film photoconductive detector provided by the invention;
According to upper identical step, only by step 3) in PBDTTT-C used replace with the PTB7 that relative molecular mass is 10000 ~ 60000g/mol, also obtain another kind of thin film photoconductive detector provided by the invention.
During test, this detector is connected with external circuit 6.The light intensity of testing monochromatic source used is 10.6 μ W/cm
2. all light intensity are calibrated by irradiatometer before testing.Bias voltage added by the test of all optical detections is 10V.
Be the absorption spectrum comparison diagram of P3HT:PCBM, PBDTTT-C:PCBM and PTB7:PCBM as shown in Figure 10.P3HT:PCBM, PBDTTT-C:PCBM and PTB7:PCBM have very strong very wide absorption in ultraviolet-visible district, and they have different absorption regions.
Be the R of organic material inorganic material bi-layer devices and the relation of wavelength as shown in figure 11.Contrast Figure 10, visible thin film photoconductive detector provided by the invention mainly upper strata organic material extinction produce charge carrier, it changes with the change of organic material the response of optical wavelength.
Claims (16)
1. a thin film photoconductive detector, comprises substrate, carrier blocking layers, electrode layer and light-absorption layer from the bottom to top successively;
Described electrode layer is made up of the anode layer and negative electrode layer being positioned at same layer, and the level interval of described anode layer and negative electrode layer is 10-1000 μm;
Described carrier blocking layers is the inorganic material of high mobility;
Described light-absorption layer is the organic material of high extinction.
2. detector according to claim 1, is characterized in that: the material forming described substrate is selected from least one in glass, silicon and flexible substrates;
The material forming described flexible substrates is selected from least one in polyimides and polyester film;
The relative molecular mass of described polyimides is 10000-100000g/mol;
The relative molecular mass of described polyester is 10000-100000g/mol.
3. detector according to claim 2, is characterized in that: the relative molecular mass of described polyimides is 45000g/mol;
The relative molecular mass of described polyester is 70000g/mol.
4. detector according to claim 1, is characterized in that: the material forming described carrier blocking layers is selected from least one in zinc oxide, titanium oxide and Graphene;
The thickness of described carrier blocking layers is 10-200nm.
5. detector according to claim 4, is characterized in that: the thickness of described carrier blocking layers is 50nm.
6. detector according to claim 1, is characterized in that: the material forming described electrode layer is selected from least one in aluminium, gold, zinc and silver;
The thickness of described electrode layer is 30-200nm.
7. detector according to claim 6, is characterized in that: the thickness of described electrode layer is 50nm.
8. detector according to claim 1, is characterized in that: the material forming described light-absorption layer is selected from least one in light-absorbing polymeric and extinction Small molecular;
The thickness of described light-absorption layer is 50-200nm.
9., according to described detector arbitrary in claim 1-8, it is characterized in that: described light-absorbing polymeric is selected from least one in P3HT, PBDTTT-C and PTB7;
Described extinction Small molecular is PCBM;
The thickness of described light-absorption layer is 150nm.
10. prepare a method for the arbitrary described detector of claim 1-9, comprise the steps:
1) carrier blocking layers is prepared on the substrate;
2) on described carrier blocking layers, electrode layer is prepared;
3) on described electrode layer, prepare light-absorption layer, obtain described detector.
11. methods according to claim 10, is characterized in that: the method preparing described carrier blocking layers, electrode layer and light-absorption layer be all selected from spin-coating method, ink-jet printing process, sputtering method and vacuum vapour deposition any one;
In described sputtering method, the vacuum degree of sputtering is 10
-4-10
-5pa;
In described vacuum vapour deposition, the vacuum degree of evaporation carrier blocking layers and electrode layer is 10
-4-10
-5pa; The vacuum degree of evaporation light-absorption layer is 10
-5-10
-6pa.
12. methods according to claim 11, is characterized in that: in described sputtering method, and the vacuum degree of sputtering is 1 × 10
-4pa;
In described vacuum vapour deposition, the vacuum degree of evaporation carrier blocking layers and electrode layer is 1 × 10
-4pa; The vacuum degree of evaporation light-absorption layer is 1 × 10
-5pa.
The arbitrary described detector of 13. claim 1-9 is in the application preparing at least one in photodetector, image image device and biology sensor.
14. application according to claim 13, is characterized in that: in described photodetector, image image device and biology sensor, and incident light is selected from least one in ultraviolet light, visible ray, infrared light and X-ray.
15. containing the photodetector of the arbitrary described detector of claim 1-9, image image device and biology sensor.
16. photodetectors according to claim 15, image image device and biology sensor, it is characterized in that: in described photodetector, image image device and biology sensor, incident light is selected from least one in ultraviolet light, visible ray, infrared light and X-ray.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106449987A (en) * | 2016-11-15 | 2017-02-22 | 华南理工大学 | Photoconductive organic semiconductor detector and production method thereof |
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|---|---|---|---|---|
| CN108963081A (en) * | 2017-10-30 | 2018-12-07 | 上海幂方电子科技有限公司 | A kind of flexibility visible light sensor and its preparation process |
| CN109065721A (en) * | 2018-07-06 | 2018-12-21 | 西安理工大学 | A kind of organic photodetector and preparation method thereof for wide spectrum |
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| CN109888099A (en) * | 2018-12-11 | 2019-06-14 | 西安理工大学 | High specific detecivity organic photodetector of quaternary wide spectrum and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7053412B2 (en) * | 2003-06-27 | 2006-05-30 | The Trustees Of Princeton University And Universal Display Corporation | Grey scale bistable display |
| CN101246952A (en) * | 2008-01-31 | 2008-08-20 | 浙江大学 | Preparation of organic-inorganic ordered compound device for ultraviolet detection |
| CN101820016A (en) * | 2010-04-16 | 2010-09-01 | 厦门大学 | Method for preparing titanium dioxide ultraviolet photoelectric detector |
| CN102222771A (en) * | 2011-06-30 | 2011-10-19 | 昆明物理研究所 | Organic and inorganic hybridized semiconductor ultraviolet photovoltaic detector |
| CN102969451A (en) * | 2012-12-11 | 2013-03-13 | 电子科技大学 | Organic thin polymer film ultraviolet light detector and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008134492A1 (en) * | 2007-04-27 | 2008-11-06 | Konarka Technologies, Inc. | Organic photovoltaic cells |
-
2013
- 2013-05-17 CN CN201310183177.5A patent/CN103311439B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7053412B2 (en) * | 2003-06-27 | 2006-05-30 | The Trustees Of Princeton University And Universal Display Corporation | Grey scale bistable display |
| CN101246952A (en) * | 2008-01-31 | 2008-08-20 | 浙江大学 | Preparation of organic-inorganic ordered compound device for ultraviolet detection |
| CN101820016A (en) * | 2010-04-16 | 2010-09-01 | 厦门大学 | Method for preparing titanium dioxide ultraviolet photoelectric detector |
| CN102222771A (en) * | 2011-06-30 | 2011-10-19 | 昆明物理研究所 | Organic and inorganic hybridized semiconductor ultraviolet photovoltaic detector |
| CN102969451A (en) * | 2012-12-11 | 2013-03-13 | 电子科技大学 | Organic thin polymer film ultraviolet light detector and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449987A (en) * | 2016-11-15 | 2017-02-22 | 华南理工大学 | Photoconductive organic semiconductor detector and production method thereof |
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