CN103325949A - Organic light-emitting diode encapsulating structure and method for manufacturing same - Google Patents
Organic light-emitting diode encapsulating structure and method for manufacturing same Download PDFInfo
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- CN103325949A CN103325949A CN2013101986992A CN201310198699A CN103325949A CN 103325949 A CN103325949 A CN 103325949A CN 2013101986992 A CN2013101986992 A CN 2013101986992A CN 201310198699 A CN201310198699 A CN 201310198699A CN 103325949 A CN103325949 A CN 103325949A
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Abstract
The invention discloses an organic light-emitting diode encapsulating structure. The organic light-emitting diode encapsulating structure comprises a substrate, a cover plate and an organic light-emitting diode which is located on the substrate. The substrate and the cover plate form the encapsulating structure through binding materials of the edge of the substrate in a binding mode. The organic light-emitting diode comprises an anode of the upper surface of the substrate, an organic layer and a cathode, wherein the organic layer and the cathode are overlaid on the anode in sequence. Physical gap pillars are arranged on the inner surface of the cover plate, blank zones which correspond to the physical gap pillars in shape and size are arranged on the cathode and the organic layer, the physical gap pillars are just located within the blank zones, and the height of each physical gap pillar is larger than the sum of the thickness of the cathode of the organic light-emitting diode and the thickness of the organic layer of the organic light-emitting diode. The invention further discloses a method for manufacturing the encapsulating structure. When the organic light-emitting diode encapsulating structure is deformed under the action of external force, the cover plate firstly is contacted with the physical gap pillars, the organic light-emitting diode is prevented from being damaged, and the service life of the organic light-emitting diode is prolonged.
Description
Technical field
The invention belongs to the ORGANIC ELECTROLUMINESCENCE DISPLAYS technical field, be specifically related to encapsulating structure of a kind of Organic Light Emitting Diode and preparation method thereof.
Background technology
Organic electroluminescent LED (OLED), also be Organic Light Emitting Diode, its principle of luminosity is to apply electric current to specific organic material, making electric energy conversion is luminous energy, thereby luminous, that Organic Light Emitting Diode has is all solid state, active illuminating, high brightness, high-contrast, ultra-thin and ultra-light, low-power consumption, without characteristics such as visual angle restriction, operating temperature range are wide, be considered to the main force that follow-on plane shows.Yet, the OLED display, especially the electrode and the organic material that are positioned at wherein are extremely responsive for the external environmental factor such as oxygen and moisture, increase along with service time, aqueous vapor in the environment and oxygen are easy to infiltrate device inside, so that peel off between metal electrode and the organic material, material cracking and anodizing, and then generation dim spot, and stain increase meeting in time enlarges rapidly, this can significantly reduce the luminescent quality such as the luminous intensity of display device and Luminescence Uniformity, finally can cause whole device failure, greatly shorten the life-span of device.Therefore, good encapsulation is to prolong the OLED most important mode of device lifetime to the OLED device.
Traditional OLED packaging technology adopts binding agent bonding substrate and encapsulation cover plate to consist of an airtight space and forms the method that the OLED device is protected, the method technical maturity, simple and firm but, encapsulation for large-size device, be out of shape by the external force factors such as gravity, make cover plate touch device and device is damaged; Simultaneously for flexible device, when adopting the flexible macromolecule film as the cover plate encapsulation, when device is crooked, folding, be easy to cause packaging film to touch and damage device in the device light-emitting zone.Defective for the cover plate encapsulation, people begin the sight turning film is encapsulated, thin-film package is at OLED device cathodes surface deposition plural layers, wherein take the Barix encapsulation technology of Vitex System as representative, this a kind of approach based on compound seals the method for OLED, at the organic and inorganic plural layers that replace of device cathodes surface preparation, but thin-film package still has pin hole and produces, equipment investment is high, and production efficiency is low, and technique is immature at present.
Summary of the invention
The object of the invention is to overcome the problems referred to above of the prior art, provide a kind of and be applicable to the encapsulation of large tracts of land cover plate and thin-film packing structure and under the encapsulating structure deformation, still can protect organic light-emitting diode packaging structure that organic light emitting diode device is not damaged and preparation method thereof.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of organic light-emitting diode packaging structure, comprise substrate, cover plate and the Organic Light Emitting Diode that is positioned on the substrate, described substrate and cover plate are formed with the hermetically-sealed construction of OLED by the binding material bonding that is arranged at substrate edges, described Organic Light Emitting Diode comprises the anode that is arranged on the substrate and is superimposed upon successively organic layer and negative electrode above the anode, it is characterized in that: the inner surface of described cover plate is provided with the physical clearance post, described negative electrode and organic layer are provided with shape, the white space that size is corresponding with the physical clearance post, described physical clearance post just in time is positioned at described white space, and the height of described physical clearance post is greater than Organic Light Emitting Diode negative electrode and organic layer thickness sum.
Further, the white space that arranges on Organic Light Emitting Diode negative electrode and the organic layer can extend to the upper surface of substrate, be negative electrode, organic layer and the anode that white space is penetrated with OLED, accordingly, the height of described physical clearance post is greater than Organic Light Emitting Diode negative electrode, organic layer and anode thickness sum.
Further, white space occupies 20～70% of the negative electrode of OLED and organic layer surface area.
Further, the negative electrode of all or part of Organic Light Emitting Diode and organic layer are provided with shape, the size white space corresponding with the physical clearance post.
Further, the negative electrode of all or part of Organic Light Emitting Diode, organic layer and anode are provided with shape, the size white space corresponding with the physical clearance post.
Further, the material of described physical clearance post is photaesthesia resin, inorganic insulating material or other kind insulating material.
Further, the material of described physical clearance post is Glycidyl Acrylate, GMA, methyl methacrylate, EMA, n-BMA, methyl polyacrylic acid 6, homopolymers or copolymer, alundum (Al2O3), silicon nitride or the silicon dioxide of 7-epoxy heptyl ester, methacrylic acid-monomers such as 2-hydroxy methacrylate.
Further, described organic layer comprises at least one deck luminescent layer.
Further, described Organic Light Emitting Diode also comprises hole injection layer, hole transmission layer, electron transfer layer or electron injecting layer.
Further, the preparation method for the organic light-emitting diode packaging structure of white space is set on negative electrode and the organic layer may further comprise the steps:
Step 211 evenly is coated with the photaesthesia resin in lid surface, and then mask plate is installed; Size, shape and the position of set physical clearance post are corresponding one by one on hollow out on described mask plate zone and the cover plate;
Step 212 exposure: with light beam irradiating step 211 gained cover plates, the photaesthesia resin in hollow out zone is solidified by irradiation, and the photaesthesia resin in the zone that masked plate covers is not solidified by irradiation yet;
Step 213 is developed: step 212 gained substrate is immersed developing solution, and the uncured photaesthesia resin in the zone that masked plate covers is dissolved in developer solution and is removed, and the photaesthesia resin of curing is then insoluble, forms the physical clearance post;
Step 214 pair step 213 gained physical clearance post toasts so that its further sclerosis;
Be the preparation of the physical clearance post of inorganic material for material, comprise step by step 221 to 226:
Step 221 adopts the sputter coating method to deposit inoranic membrane at anode surface;
Then step 222 installs mask plate in inoranic membrane surface uniform coating photoresist and baking; If institute's resist coating is negative photoresist, then position, the shape of set physical clearance post is corresponding one by one on the hollow out on mask plate zone and the anode; If institute's resist coating is positive photoresist, then position, the shape of set physical clearance post is corresponding one by one on the shaded areas on the mask plate and the anode;
Step 223 exposure: light beam exposes to the photoresist on inoranic membrane surface through mask plate, and for negative photoresist, hollow out zone photoresist is solidified by irradiation, and for positive photoresist, hollow out zone photoresist is subjected to irradiation and decomposes;
Step 224 is developed: step 223 gained substrate is immersed developing solution, and uncured or decomposed photoresist dissolves and is removed, and the residue photoresist then covers on the inoranic membrane;
Step 225 etching: step 224 gained substrate is immersed etching liquid, and the inorganic thin film that is removed in the photoresist zone does not have protection to be etched away, and the inoranic membrane of photoresist overlay area then is left;
Step 226 is peeled off: step 225 gained substrate is immersed stripper, remove the photoresist that covers on the inoranic membrane, obtain the physical clearance post;
Further, the preparation method for the organic light-emitting diode packaging structure of white space is set on anode, negative electrode and the organic layer may further comprise the steps:
Step 211 evenly is coated with the photaesthesia resin in lid surface, and mask plate is installed, and size, shape and the position of set physical clearance post are corresponding one by one on the hollow out zone on the described mask plate and the cover plate;
Step 212 exposure: with light beam irradiating step 211 gained cover plates, the photaesthesia resin in hollow out zone is solidified by irradiation, and the photaesthesia resin in the zone that masked plate covers is not solidified by irradiation yet;
Step 213 is developed: step 212 gained substrate is immersed developing solution, and the uncured photaesthesia resin in the zone that masked plate covers is dissolved in developer solution and is removed, and the photaesthesia resin of curing forms physical clearance and lives;
Step 214 pair step 213 gained physical clearance post toasts and makes its further sclerosis;
Be the preparation of the physical clearance post of inorganic material for material, comprise step by step 221 to 226:
Step 221 adopts the sputter coating method to deposit inoranic membrane at anode surface;
Then step 222 installs mask plate in inoranic membrane surface uniform coating photoresist and baking; If institute's resist coating is negative photoresist, then position, the shape of set physical clearance post is corresponding one by one on the hollow out on mask plate zone and the cover plate; If institute's resist coating is positive photoresist, then position, the shape of set physical clearance post is corresponding one by one on the shaded areas on the mask plate and the cover plate;
Step 223 exposure: light beam exposes to the photoresist on inoranic membrane surface through mask plate, and for negative photoresist, hollow out zone photoresist is solidified by irradiation, and for positive photoresist, hollow out zone photoresist is subjected to irradiation and decomposes;
Step 224 is developed: step 223 gained substrate is immersed developing solution, and uncured or decomposed photoresist dissolves and is removed, and the residue photoresist then covers on the inoranic membrane;
Step 225 etching: step 224 gained substrate is immersed etching liquid, and the inorganic thin film that is removed in the photoresist zone does not have protection to be etched away, and the inoranic membrane of photoresist overlay area then is left;
Step 226 is peeled off: step 225 gained substrate is immersed stripper, remove the photoresist that covers on the inoranic membrane, obtain the physical clearance post;
Step 7 etching: step 6 gained substrate is immersed in the etching liquid, and the surface does not have the conducting film of positive photoresist protection to be etched away, and the surface has the conducting film of positive photoresist protection then to be left;
Step 8 is peeled off: step 7 gained substrate is immersed in the stripper, remove the positive photoresist on conducting film surface, the residue conducting film is anode;
Step 9 is step 8 gained substrate and deposition mask plate exactitude position, and shape, size and the position of the white space that arranges on the shaded areas of deposition mask plate and Organic Light Emitting Diode organic layer and the negative electrode are corresponding one by one;
Step 10 is taken off the deposition mask plate at step 9 gained substrate surface successively evaporation organic layer and negative electrode after evaporation is finished, obtain to have the substrate of white space;
Step 11 is formed with the encapsulating structure of OLED with the substrate of step 10 gained and the cover plate exactitude position of step 2 gained with binding material adhesive base plate and cover plate.
Further, can be with step 2 repeated several times to obtain the physical clearance post of specified altitude in the preparation process of physical clearance post in the cover plate.
Compared with prior art, one of beneficial effect of the present invention is:
At first, organic light-emitting diode packaging structure of the present invention arranges height greater than the physical clearance post of Organic Light Emitting Diode negative electrode and organic layer height sum at cover inner surface, when the cover plate of encapsulating structure is deformed by External Force Acting, the physical clearance post props up anode or the substrate of Organic Light Emitting Diode by the white space on Organic Light Emitting Diode negative electrode and the organic layer, negative electrode and organic layer that the cover plate of avoiding being out of shape directly acts on Organic Light Emitting Diode cause it to destroy, and improve the useful life of Organic Light Emitting Diode;
Secondly, organic light-emitting diode packaging structure of the present invention is particularly useful for large scale organic LED panel and flexible organic LED panel;
At last, the preparation method of organic light-emitting diode packaging structure of the present invention only needs the physical clearance post to be set or to change the mask plate shape in anodic formation technique at encapsulation cover plate, and versatility is good.
Description of drawings
Fig. 1 is the sectional view of the organic light-emitting diode packaging mechanism of an embodiment of the present invention;
Fig. 2 is the sectional view of the organic light-emitting diode packaging mechanism in another embodiment of the present invention.
Embodiment
For the purpose, technical scheme and the advantage that make this reality invention is clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
As shown in Figure 1, a kind of organic light-emitting diode packaging structure in the present embodiment, comprise substrate 1, cover plate 3 and be positioned at Organic Light Emitting Diode 2 on the substrate 1, the binding material 4 that is arranged at substrate 1 edge gets up to be formed with the encapsulating structure of OLED 2 with substrate 1 and cover plate 3 bondings, the Organic Light Emitting Diode here comprises the anode 21 that is arranged on the substrate and is superimposed upon successively anode 21 top organic layer 22 and negative electrode 23; Also be provided with physical clearance post 5 on the inner surface of cover plate 3, negative electrode 23 and organic layer 22 are provided with shape, the size white space 6 corresponding with the physical clearance post, physical clearance post 5 just in time is positioned at this white space 6, and the height of physical clearance post 5 is greater than Organic Light Emitting Diode 2 negative electrodes 23 and organic layer 22 thickness sums.When the cover plate 3 of encapsulating structure is deformed by External Force Acting, the anode 21 that negative electrode 23 and the white space 6 organic layer 22 on of physical clearance post 5 by Organic Light Emitting Diode 2 props up Organic Light Emitting Diode 2, negative electrode 23 and organic layer 22 that the cover plate 3 of avoiding being out of shape directly acts on Organic Light Emitting Diode 2 cause it to destroy, and improve the useful life of Organic Light Emitting Diode 2.
For luminosity and the visual angle that guarantees encapsulating structure, white space 6 occupies 20% of the negative electrode 23 of OLED 2 and organic layer 22 surface areas.
All be equipped with white space 6 corresponding to shape, size and physical clearance post 5 in the present embodiment on the negative electrode 23 of Organic Light Emitting Diodes 2 and the organic layer 22.
The material of the physical clearance post 5 in the present embodiment is Glycidyl Acrylate, GMA, methyl methacrylate, EMA, n-BMA, methyl polyacrylic acid 6, the photaesthesia resins such as the homopolymers of 7-epoxy heptyl ester, methacrylic acid-monomers such as 2-hydroxy methacrylate or copolymer.
The organic layer 22 of the Organic Light Emitting Diode in the present embodiment can include only at least one deck luminescent layer, also can comprise at least one deck luminescent layer and hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer, namely this organic light-emitting diode packaging structure is applicable to various Organic Light Emitting Diodes.
The preparation method of the described organic light-emitting diode packaging structure of the present embodiment may further comprise the steps:
Step 7 is with step 6 gained substrate 1 and deposition mask plate exactitude position, and successively evaporation organic layer 22 and negative electrode 23, shape, size and the position of the white space that wherein, arranges on the shaded areas of deposition mask plate and Organic Light Emitting Diode organic layer and the negative electrode are corresponding one by one;
Step 8 is formed with the encapsulating structure of OLED 2 with the substrate 1 of step 7 gained and cover plate 3 exactitude positions of step 5 gained with binding material 4 adhesive base plate 1 and cover plate 3.
The encapsulating structure of the organic diode in the present embodiment is with the encapsulating structure of organic diode among the embodiment 1, as shown in Figure 1.
For luminosity and the visual angle that guarantees encapsulating structure, the floor space of physical clearance post 5 is occupied 40% of the negative electrode 23 of OLED 2 and organic layer 22 surface areas in the present embodiment.
Only the negative electrode 23 of part Organic Light Emitting Diode 2 and organic layer 22 are provided with white space 6 corresponding to shape, size and physical clearance post 5 in the present embodiment, because compare Red and blue light, the luminous efficiency of green glow is higher, selection is arranged at white space 6 on the negative electrode 23 and organic layer 22 of Organic Light Emitting Diode of green light, and at the correspondence position of cover plate 3 inner surfaces physical clearance post 5 is set, replace tradition to adjust the way that different glow color diode pixel sizes are adjusted different colours luminosity ratio.
The material of the physical clearance post 5 in the present embodiment is alundum (Al2O3), silicon nitride or silicon dioxide.
The organic layer 22 of the Organic Light Emitting Diode in the present embodiment can include only at least one deck luminescent layer, also can comprise at least one deck luminescent layer and hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer, namely this organic light-emitting diode packaging structure is applicable to various Organic Light Emitting Diodes.
The preparation method of the described organic light-emitting diode packaging structure of the present embodiment may further comprise the steps:
Then step 3, accurately locates gained cover plate and mask plate in inoranic membrane surface uniform coating negative photoresist and the baking of step 2 gained cover plate 3, and the hollow out zone of described mask plate is corresponding one by one with shape, size and the position of set physical clearance post;
Step 7 is peeled off: step 6 gained substrate 3 is immersed in the stripper, remove the cover plate 3 that the curing photoresist that covers on the inoranic membrane obtains being provided with physical clearance post 5;
Step 8 adopts sputter coating process to be prepared with the anode 21 of OLED 2 at substrate 1;
Step 9 is with step 8 gained substrate 1 and deposition mask plate exactitude position, successively evaporation organic layer 22 and negative electrode 23, shape, size and the position of the white space that wherein, arranges on the shaded areas of deposition mask plate and Organic Light Emitting Diode organic layer and the negative electrode are corresponding one by one;
Step 10 is formed with the encapsulating structure of OLED 2 with the substrate 1 of step 9 gained and cover plate 3 exactitude positions of step 7 gained with binding material 4 adhesive base plate 1 and cover plate 3.
As shown in Figure 2, a kind of organic light-emitting diode packaging structure in the present embodiment, comprise substrate 1, cover plate 3 and be positioned at Organic Light Emitting Diode 2 on the substrate 1, binding material 4 bonding that is arranged at substrate 1 edge gets up to be formed with the encapsulating structure of OLED 2 with substrate 1 and cover plate 3 bondings, the Organic Light Emitting Diode here comprises the anode 21 that is arranged on the substrate and is superimposed upon successively anode 21 top organic layer 22 and negative electrode 23; The inner surface of described cover plate 3 is provided with physical clearance post 5, on negative electrode 23, the organic layer 22 and anode 21 be provided with shape, the size white space 6 corresponding with the physical clearance post, physical clearance post 5 just in time is positioned at white space 6, and the height of physical clearance post 5 is greater than the thickness sum of Organic Light Emitting Diode 2 negative electrodes 23, organic layer 22 and anode 21.When the cover plate 3 of encapsulating structure is deformed by External Force Acting, physical clearance post 5 props up the substrate 1 of Organic Light Emitting Diode 2 by the white space 6 that arranges on negative electrode 23, organic layer 22 and the anode 21 of Organic Light Emitting Diode 2, negative electrode 23 and organic layer 22 that the cover plate 3 of avoiding being out of shape directly acts on Organic Light Emitting Diode 2 cause it to destroy, and improve the useful life of Organic Light Emitting Diode 2.
For luminosity and the visual angle that guarantees encapsulating structure, in the present embodiment the floor space of physical clearance post 5 occupy OLED 2 negative electrode 23, organic layer 22 and anode surface area 70%.
The anode 21 of the part Organic Light Emitting Diode 2 in the present embodiment, negative electrode 23 and organic layer 22 are provided with shape, the size white space 6 corresponding with physical clearance post 5.
The material of the physical clearance post 5 in the present embodiment is Glycidyl Acrylate, GMA, methyl methacrylate, EMA, n-BMA, methyl polyacrylic acid 6, the photaesthesia resins such as the homopolymers of 7-epoxy heptyl ester, methacrylic acid-monomers such as 2-hydroxy methacrylate or copolymer.
The organic layer 22 of the Organic Light Emitting Diode in the present embodiment can include only at least one deck luminescent layer, also can comprise at least one deck luminescent layer and hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer, namely this organic light-emitting diode packaging structure is applicable to various Organic Light Emitting Diodes.
The preparation method of the described organic light-emitting diode packaging structure of the present embodiment may further comprise the steps:
Step 7 evenly is coated with positive photoresist and baking with the conductive layer surface of step 6 gained substrate, then, with gained substrate and mask plate exactitude position, size, shape and the position of set anode are corresponding one by one on shaded areas on the described mask plate and the substrate, zone on hollow out on described mask plate zone and the substrate 1 except anode 21 is corresponding one by one, the hollow out zone also comprise with Organic Light Emitting Diode anode 21, organic layer 22 and negative electrode 21 on shape, size and the position of white space 6 of setting regional one to one;
Step 8 exposure: with light beam irradiating step 7 gained substrates 1, the zone that masked plate covers since light beam irradiates less than, the positive photoresist that is coated with can not decompose, irradiated photoresist generation decomposition reaction in the hollow out zone;
Step 9 is developed: step 8 gained substrate 1 is immersed in the developer solution, and the positive photoresist that decomposition reaction occurs is dissolved in the developer solution, and the photoresist that decomposition reaction does not occur covers conductive layer surface;
Step 10 etching: step 9 gained substrate 1 is immersed in the etching liquid, and the surface does not have the conductive layer of positive photoresist protection to be etched away, and the surface has the conductive layer of positive photoresist protection to be left;
Step 11 is peeled off: step 10 gained substrate 1 is immersed in the stripper, and the positive photoresist of conductive layer surface is dissolved in the stripper and is removed, and the residue conductive layer is the anode 21 of Organic Light Emitting Diode;
Step 12 is step 11 gained substrate 1 and deposition mask plate exactitude position, and shape, size and the position of the white space of setting are corresponding one by one on the shaded areas of deposition mask plate and Organic Light Emitting Diode anode 21, organic layer 22 and the negative electrode 23;
Step 13 is successively evaporation organic layer 22 and negative electrode 23 on the surface of step 12 gained substrate 1, takes off mask plate after evaporation is finished, and obtains to have the substrate 1 of white space;
Step 14 is formed with the encapsulating structure of OLED 2 with the substrate 1 of step 13 gained and cover plate 3 exactitude positions of step 6 gained with binding material 4 adhesive base plate 1 and cover plate 3.
Further, can be with step 2 to the physical clearance post of 5 repeated several times with the acquisition specified altitude in the preparation process of physical clearance post 5 in the cover plate.
Although invention has been described with reference to a plurality of explanatory embodiment of the present invention here, but, should be appreciated that, those skilled in the art can design a lot of other modification and execution modes, and these are revised and execution mode will drop within the disclosed principle scope and spirit of the application.
Claims (10)
1. organic light-emitting diode packaging structure, comprise substrate, cover plate and the Organic Light Emitting Diode that is positioned on the substrate, described substrate and cover plate are formed with the hermetically-sealed construction of OLED by the binding material bonding that is arranged at substrate edges, described Organic Light Emitting Diode comprises the anode that is arranged on the substrate and is superimposed upon successively organic layer and negative electrode above the anode, it is characterized in that: the inner surface of described cover plate is provided with the physical clearance post, described negative electrode and organic layer are provided with shape, the white space that size is corresponding with the physical clearance post, described physical clearance post is positioned at described white space, and the height of described physical clearance post is greater than the thickness sum of Organic Light Emitting Diode negative electrode and organic layer.
2. organic light-emitting diode packaging structure according to claim 1, it is characterized in that: the white space that arranges on Organic Light Emitting Diode negative electrode and the organic layer extends to the upper surface of substrate, accordingly, the height of described physics gap post is greater than the thickness sum of Organic Light Emitting Diode negative electrode, organic layer and anode.
3. organic light-emitting diode packaging structure according to claim 1 and 2 is characterized in that: described white space occupies 20～70% of the negative electrode of OLED and organic layer surface area.
4. organic light-emitting diode packaging structure according to claim 1 is characterized in that: the negative electrode of all or part of Organic Light Emitting Diode and organic layer are provided with shape, the size white space corresponding with the physical clearance post.
5. organic light-emitting diode packaging structure according to claim 2 is characterized in that: the anode of all or part of Organic Light Emitting Diode, negative electrode and organic layer are provided with shape, the size white space corresponding with the physical clearance post.
6. organic light-emitting diode packaging structure according to claim 1 and 2 is characterized in that: the material of described physical clearance post is photaesthesia resin or inorganic for no reason at all material.
7. organic light-emitting diode packaging structure according to claim 6, it is characterized in that: the material of described physical clearance post is Glycidyl Acrylate, GMA, methyl methacrylate, EMA, n-BMA, methyl polyacrylic acid 6, homopolymers or copolymer, alundum (Al2O3), silicon nitride or the silicon dioxide of 7-epoxy heptyl ester, methacrylic acid-monomers such as 2-hydroxy methacrylate.
8. organic light-emitting diode packaging structure according to claim 1 and 2, it is characterized in that: described organic layer comprises at least one deck luminescent layer, also comprises hole injection layer, hole transmission layer, electron transfer layer or electron injecting layer.
9. the preparation method of an organic light-emitting diode packaging structure claimed in claim 1 is characterized in that: may further comprise the steps:
Step 1 is cleaned cover plate or plasma cleaning by UV, dry for standby;
Step 2 is the preparation of the physical clearance post of insulating polymeric material for material, comprises step by step 211 to 214:
Step 211 evenly is coated with the photaesthesia resin in lid surface, and then mask plate is installed; Size, shape and the position of set physical clearance post are corresponding one by one on hollow out on described mask plate zone and the cover plate;
Step 212 exposure: with light beam irradiating step 211 gained cover plates, the photaesthesia resin in hollow out zone is solidified by irradiation, and the photaesthesia resin in the zone that masked plate covers is not solidified by irradiation yet;
Step 213 is developed: step 212 gained substrate is immersed developing solution, and the uncured photaesthesia resin in the zone that masked plate covers is dissolved in developer solution and is removed, and the photaesthesia resin of curing is then insoluble, forms the physical clearance post;
Step 214 pair step 213 gained physical clearance post toasts so that its further sclerosis;
Be the preparation of the physical clearance post of inorganic material for material, comprise step by step 221 to 226:
Step 221 adopts the sputter coating method to deposit inoranic membrane at anode surface;
Then step 222 installs mask plate in inoranic membrane surface uniform coating photoresist and baking; If institute's resist coating is negative photoresist, then position, the shape of set physical clearance post is corresponding one by one on the hollow out on mask plate zone and the anode; If institute's resist coating is positive photoresist, then position, the shape of set physical clearance post is corresponding one by one on the shaded areas on the mask plate and the anode;
Step 223 exposure: light beam exposes to the photoresist on inoranic membrane surface through mask plate, and for negative photoresist, hollow out zone photoresist is solidified by irradiation, and for positive photoresist, hollow out zone photoresist is subjected to irradiation and decomposes;
Step 224 is developed: step 223 gained substrate is immersed developing solution, and uncured or decomposed photoresist dissolves and is removed, and the residue photoresist then covers on the inoranic membrane;
Step 225 etching: step 224 gained substrate is immersed etching liquid, and the inorganic thin film that is removed in the photoresist zone does not have protection to be etched away, and the inoranic membrane of photoresist overlay area then is left;
Step 226 is peeled off: step 225 gained substrate is immersed stripper, remove the photoresist that covers on the inoranic membrane, obtain the physical clearance post;
Step 3 adopts sputter coating process to be prepared with the anode of OLED at substrate;
Step 4 is step 3 gained substrate and deposition mask plate exactitude position, and shape, size and the position of the white space that arranges on the shaded areas of deposition mask plate and Organic Light Emitting Diode organic layer and the negative electrode are corresponding one by one;
Step 5 is taken off the deposition mask plate at step 4 gained substrate surface successively evaporation organic layer and negative electrode after evaporation is finished, obtain to have the substrate of white space;
Step 6 is formed with the encapsulating structure of OLED with the substrate of step 5 gained and the cover plate exactitude position of step 2 gained with binding material adhesive base plate and cover plate.
10. the preparation method of an organic light-emitting diode packaging structure claimed in claim 2 is characterized in that: may further comprise the steps:
Step 1 is cleaned cover plate or plasma cleaning by UV, dry for standby;
Step 2 is the preparation of the physical clearance post of insulating polymeric material for material, comprises step by step 211 to 214:
Step 211 evenly is coated with the photaesthesia resin in lid surface, and mask plate is installed, and size, shape and the position of set physical clearance post are corresponding one by one on the hollow out zone on the described mask plate and the cover plate;
Step 212 exposure: with light beam irradiating step 211 gained cover plates, the photaesthesia resin in hollow out zone is solidified by irradiation, and the photaesthesia resin in the zone that masked plate covers is not solidified by irradiation yet;
Step 213 is developed: step 212 gained substrate is immersed developing solution, and the uncured photaesthesia resin in the zone that masked plate covers is dissolved in developer solution and is removed, and the photaesthesia resin of curing forms physical clearance and lives;
Step 214 pair step 213 gained physical clearance post toasts and makes its further sclerosis;
Be the preparation of the physical clearance post of inorganic material for material, comprise step by step 221 to 226:
Step 221 adopts the sputter coating method to deposit inoranic membrane at anode surface;
Then step 222 installs mask plate in inoranic membrane surface uniform coating photoresist and baking; If institute's resist coating is negative photoresist, then position, the shape of set physical clearance post is corresponding one by one on the hollow out on mask plate zone and the cover plate; If institute's resist coating is positive photoresist, then position, the shape of set physical clearance post is corresponding one by one on the shaded areas on the mask plate and the cover plate;
Step 223 exposure: light beam exposes to the photoresist on inoranic membrane surface through mask plate, and for negative photoresist, hollow out zone photoresist is solidified by irradiation, and for positive photoresist, hollow out zone photoresist is subjected to irradiation and decomposes;
Step 224 is developed: step 223 gained substrate is immersed developing solution, and uncured or decomposed photoresist dissolves and is removed, and the residue photoresist then covers on the inoranic membrane;
Step 225 etching: step 224 gained substrate is immersed etching liquid, and the inorganic thin film that is removed in the photoresist zone does not have protection to be etched away, and the inoranic membrane of photoresist overlay area then is left;
Step 226 is peeled off: step 225 gained substrate is immersed stripper, remove the photoresist that covers on the inoranic membrane, obtain the physical clearance post;
Step 3 adopts sputter coating process at substrate preparation one deck conducting film;
Step 4 is in conducting film surface uniform coating positive photoresist and baking, then, substrate and mask plate exactitude position with the coating positive photoresist, size, shape and the position of set anode are corresponding one by one on shaded areas on the described mask plate and the substrate, zone on hollow out on described mask plate zone and the substrate except anode is corresponding one by one, also comprise with Organic Light Emitting Diode anode, organic layer and negative electrode on shape, size and the position of the white space that arranges regional one to one;
Step 5 exposure: with light beam irradiating step 4 gained substrates, the zone that masked plate covers, the positive photoresist that is coated with does not decompose, and the photoresist in the hollow out zone is decomposed by light beam irradiates then;
Step 6 is developed: step 5 gained substrate is immersed in the developer solution, and the positive photoresist that decomposition reaction occurs is dissolved in the developer solution, and the photoresist that decomposition reaction does not occur covers the conducting film surface;
Step 7 etching: step 6 gained substrate is immersed in the etching liquid, and the surface does not have the conducting film of positive photoresist protection to be etched away, and the surface has the conducting film of positive photoresist protection then to be left;
Step 8 is peeled off: step 7 gained substrate is immersed in the stripper, remove the positive photoresist on conducting film surface, the residue conducting film is anode;
Step 9 is step 8 gained substrate and deposition mask plate exactitude position, and shape, size and the position of the white space that arranges on the shaded areas of deposition mask plate and Organic Light Emitting Diode organic layer and the negative electrode are corresponding one by one;
Step 10 is taken off the deposition mask plate at step 9 gained substrate surface successively evaporation organic layer and negative electrode after evaporation is finished, obtain to have the substrate of white space;
Step 11 is formed with the encapsulating structure of OLED with the substrate of step 10 gained and the cover plate exactitude position of step 2 gained with binding material adhesive base plate and cover plate.
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