CN103413744B - A kind of Cascade-stage-type electron beam diode - Google Patents

A kind of Cascade-stage-type electron beam diode Download PDF

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Publication number
CN103413744B
CN103413744B CN201310309276.3A CN201310309276A CN103413744B CN 103413744 B CN103413744 B CN 103413744B CN 201310309276 A CN201310309276 A CN 201310309276A CN 103413744 B CN103413744 B CN 103413744B
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China
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diode
electron beam
housing
suspension electrode
spring
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CN201310309276.3A
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CN103413744A (en
Inventor
来定国
杨莉
张永民
姚伟博
杨实
任书庆
张玉英
程亮
苏兆锋
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Northwest Institute of Nuclear Technology
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Northwest Institute of Nuclear Technology
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Abstract

The present invention relates to a kind of Cascade-stage-type electron beam diode, comprise electron beam diode body and coaxial line is arranged at intervals with the suspension electrode being no less than 1 between diode anode and diode cathode, suspension electrode is supported by bracing or strutting arrangement; Bracing or strutting arrangement comprises support pin, housing, spring, iron core and solenoid, and housing barrel outside is provided with solenoid, and enclosure interior is provided with spring, and the front end of spring is provided with iron core, and the center of iron core is through hole, and is solidified as a whole with support pin; Movable under the effect of the electromagnetic force that support pin can produce at solenoid and spring, suspension electrode is fixed and unclamps; Present invention achieves a kind of tandem work of Multiple level diode, the Pulsed Xray source that power spectrum is lower can be produced.

Description

A kind of Cascade-stage-type electron beam diode
Technical field
The present invention relates to technical field of pulse power, relate to the electron beam Cascade diode of a kind of Multiple level tandem work.
Background technology
Carry out system-generated electromagnetic pulse effect study to need to set up high fluence and the hard X ray source of spectral distribution between 20 ~ 120keV, the power spectrum of hard X ray depends on the energy of bremstrahlen electron beam, and adopt tandem diode, reduce electron beam energy by secondary or Multilevel partial-pressure, can produce that large area, power spectrum are true to nature, high fluence hard X ray.The doubleEagle of the U.S. has carried out two-stage and three grades of tandem diodes, obtains good experimental data.
In Pulse Power Techniques, vacuum diode is as the load of transmission line, and its effect is that the high power pulse energy that transmission line is formed is changed into the particle beams or implosion plasma.Vacuum diode is primarily of negative electrode and anode composition, namely tandem diode increases new electrode again between the negative electrode of electron beam diode and anode, be similar to the series connection effect between capacitor plate, newly increase the anode of one side as first gap of electrode, another side is as the negative electrode in second gap, under high-voltage pulse effect, realize the tandem working of diode.
This by single gap diode by increase electrode be divided into multiple gap technology, make electrode retaining collar not overlapping on electron beam transmit direction, due to capacitances in series dividing potential drop, when main pulse is loaded into diode, each gap obtains corresponding voltage, suspension electrode is namely as the anode in first gap, stop the electronics that main cathode (first negative electrode) is launched and be converted to X ray, the cathode emission electronics simultaneously as second gap forms large-area Uniform Irradiation face in a plane nearer apart from diode X-ray window.The accelerating voltage of each diode gap electronics reduces due to dividing potential drop, electron beam power spectrum is reduced, and bremsstrahlung X power spectrum reduces, and produces new X-ray energy spectrum, and realize power match transmission or accurate matching transmission, improve energy transmission efficiency and diode energy conversion efficiency; In addition by gap dividing potential drop, the voltage of pulse power supply can also be improved, thus improve total energy storage, produce the X ray of large area high fluence.
In the research of tandem diode, the support of suspension electrode is the prerequisite realizing tandem diode.In low impedance diode chamber, the normal insulated fixing support that adopts supports middle electrode at present, when adopting fixed insulation to support, due to the introducing that solid insulator supports, can affect electric field between electrodes and distributing.Simultaneously when lead-in insulator supports, at insulator, three binding site place electric fields of electrode and space medium become the most weak place, therefore lead-in insulator, first consider whether insulator meets the requirement of edge flashing, considers interelectrode Electric Field Distribution simultaneously.When insulator can not meet the requirement of edge flashing time, the size of insulator must be increased, can affect so again diode inductance distribution, reduce pulse front edge.Especially for when the electron beam of hundreds of kilovolts is applied on the coaxial electrode of a Multiple level, conventional strutting piece is difficult to meet electric insulation requirement, has influence on the realization of tandem diode.
Summary of the invention
The object of this invention is to provide the method for a kind of Multiple level diode tandem work, it is inadequate for the suspension electrode supporting construction existed in diode tandem insulation property under action of high voltage, and to the deficiency that Electric Field Distribution has an impact, propose a kind of Cascade-stage-type electron beam diode of based upon activities supporting construction, moment before diode operation, pass through External Force Acting, remove supporting construction, after movable supporting construction is removed, suspension electrode is freely falling body under gravity, the inertia of object is utilized to realize the suspension of target, realize the Multiple level diode tandem work of moment.
Concrete technical scheme of the present invention is as follows:
A kind of Cascade-stage-type electron beam diode, comprise electron beam diode shell 2, diode anode 10 and diode cathode 9, its special character is: also comprise at least one suspension electrode 1 be arranged between diode anode 10 and diode cathode 9 and the multiple bracing or strutting arrangements 11 be arranged on electron beam diode shell 2; Each suspension electrode is at least supported by three bracing or strutting arrangements 11; The center of described suspension electrode 1, diode anode 10 and diode cathode 9 is on same straight line, and the working face of suspension electrode 1 is parallel to diode anode 10 and diode cathode 9; Described suspension electrode 1 outer ring is provided with at least three supported holes; Described bracing or strutting arrangement 11 comprises support pin 3, housing 4, spring 5, iron core 6, solenoid 7 and position-limiting drum 8, and described electron beam diode shell 2 is provided with through hole; Described housing 4 is tubular structure, and its openend is fixed on electron beam diode shell 2 and just to through hole, its non-openend arranges centre bore, and described position-limiting drum 8 is buckled on the centre bore of housing 4; The barrel that described solenoid 7 is arranged on housing 4 is outside, it is inner that described spring 5 is arranged on housing 4, one end of described spring 5 withstands on iron core 6, its other end withstands on the non-openend of housing 4, the middle part of described support pin 3 is fixed on iron core 6, insert in the supported hole that suspension electrode 1 outer ring is arranged after its inner through hole passed on electron beam diode shell 2, its outer end is stretched in position-limiting drum 8 after passing the centre bore of spring 5 and the non-openend of housing 4; Move along housing 4 axis direction under the effect of the electromagnetic force that described iron core 6 can produce at solenoid 7 and spring 5.
Above-mentioned Cascade-stage-type electron beam diode comprises the drive circuit driving bracing or strutting arrangement, described drive circuit comprises storage capacitor C1, thyratron U1, divider resistance unit and delayer T1, wherein storage capacitor C1, thyratron U1 and solenoid 7 loop in series, and the tie point ground connection of storage capacitor C1 and solenoid 7; Divider resistance unit is connected in parallel on the two ends of solenoid 7, described divider resistance unit comprises divider resistance R1, R2 of two tandem workings, the input of described delayer T1 electrically connects between two divider resistances, and output connects with the prime trigger element of electron beam diode.
Above-mentioned each suspension electrode is at least supported by three bracing or strutting arrangements 11; The support pin 3 of these three bracing or strutting arrangements is separately positioned on directly over corresponding suspension electrode 1, front-left and front-right.
Above-mentioned suspension electrode 1 is one, and the gap between suspension electrode 1 and diode cathode 9 is 6.4 ~ 6.8mm, and the gap between suspension electrode 1 and diode anode 10 is 8.6 ~ 8.8mm.
The non-openend of above-mentioned housing 4 is provided with multiple gas communication hole communicated with position-limiting drum 8.
Above-mentioned spring 5 is turriform spring, and described iron core 6 is arranged on the large footpath place of turriform spring.
Above-mentioned iron core 6 adopts soft magnetic material pure iron to make, and described support pin 3 adopts aluminium to make.
Between above-mentioned housing 4 centre bore and electron beam diode shell 2 through hole, axiality is less than 0.04mm, housing 4 center-hole diameter and electron beam diode shell 2 through-hole diameter with support pin diameter deviation ± 0.02mm.
The technique effect that the present invention has is as follows:
1, the present invention is by the control to suspension electrode, can realize the tandem work of multiple diode gaps, reduces single gap diode voltage, produces the Pulsed Xray source that power spectrum is lower.
2, the present invention adopts movement support structures, moment before Pulsed electron beam diode work removes support fast, realize the suspension work of high-field electrode, thus overcome that to be fixedly supported on insulation property under action of high voltage inadequate, and to the deficiency that Electric Field Distribution has an impact.
3, support and control system of the present invention can make support pin withdraw support fast, and in the time of withdrawing support, intermediate high-pressure electrode freely falling body distance is less than 0.15mm, is in suspended state instantaneously, substantially not impact to voltage electric field between electrodes distribution.
4, the supporting construction based on high-speed screw work of electromagnet principle of the present invention's development, volume is little, and structure is simple, and movement velocity is fast, can realize supporting the effective location of suspension electrode, and can withdraw support fast, ensures the suspension work of suspension electrode.
5, suspension electrode of the present invention is supported by three bracing or strutting arrangements, wherein two symmetrical in the horizontal direction, another directly over vertical direction, avoid support cause due to the Action of Gravity Field of suspension electrode when pin is arranged on below withdraw smooth problem.
6, support and control system drive circuit of the present invention can make the solenoid of supporting construction produce larger electromagnetic force instantaneously, drive support pin can withdraw out the support to suspension electrode within the 5ms time, withdraw distance and be not less than 30mm, in addition adopt the method for synchronizing relay, achieve synchronousing working of support and control system and tandem diode.
7, suspension electrode of the present invention and supporting construction thereof can also be used in other high-field electrodes support research.
Accompanying drawing illustrates:
Fig. 1 is tandem diode structure principle schematic of the present invention;
Fig. 2 is support device structure schematic diagram of the present invention;
Fig. 3 is that the present invention three supports for suspension electrode support schematic diagram;
Fig. 4 is bracing or strutting arrangement driving circuit principle schematic diagram of the present invention;
Fig. 5 is that bracing or strutting arrangement drive circuit of the present invention synchronouss working flow chart with the time delay of diode.
Reference numeral is: 1-suspension electrode; 2-diode case; 3-supports pin; 4-housing; 5-spring; 6-iron core; 7-solenoid; 8-position-limiting drum; 9-diode cathode; 10-diode anode; 11-bracing or strutting arrangement; C1-storage capacitor; U1-thyratron; R1, R2-divider resistance; T1-delayer.
Embodiment
Fig. 1 is tandem diode structure principle schematic of the present invention, between the negative electrode 9 and anode 10 of conventional electrical bundle diode, coaxial line is arranged at intervals with the suspension electrode 1 being no less than, suspension electrode 1 is generally annular plate, working face is parallel to the working face of diode anode 10 and diode cathode 9, and the center of suspension electrode 1, diode anode 10 and diode cathode 9 point-blank; The bracing or strutting arrangement 11 that suspension electrode 1 is fixed on electron beam diode shell by several supports, the housing 4 of bracing or strutting arrangement 11 is fixed on electron beam diode shell 2, by supporting the support of pin 3 and withdrawing, realize the moment suspension work of many group high pressure suspending electrodes 1.
Between suspension electrode and and spacing between diode anode 10 and negative electrode 9 want rationally, for ensureing the consistency of electron emission between Multiple level, for a suspension electrode, gap between suspension electrode 1 and diode cathode 9 is 6.4 ~ 6.8mm, and the gap between suspension electrode 1 and diode anode 10 is 8.6 ~ 8.8mm.
As shown in Figure 2, bracing or strutting arrangement 11 of the present invention comprises support pin 3, housing 4, spring 5, iron core 6, solenoid 7 and position-limiting drum 8, housing 4 be opening forward, namely towards the tubular structure in diode direction, housing 4 front end flange is fixed on diode case 2, the bottom of housing 4 cylindrical shell is fixed with position-limiting drum 8, the nozzle of position-limiting drum 8 forward, the center of housing 4 cylinder body bottom and corresponding diode case 2 have through hole, for ensureing to support the smooth plug of pin and accurate location, require that the axiality of the support pin through hole of centre bore and diode case at the bottom of housing cylinder is not more than 0.04mm.
Housing 4 outer tube wall is provided with solenoid 7, and housing 4 inside is provided with spring 5, and the front end of spring 5 is provided with iron core 6, the center of iron core 6 is through hole, and be solidified as a whole with through in the middle part of the support pin 3 of iron core through hole, both are integrally fixed, and avoid adopting being threaded causing the deviation of axiality; Support the two ends of pin 3 through housing 4 body centre hole and diode case 2 through hole, and it is movable under the effect of the electromagnetic force that can produce at solenoid 7 and spring 5, when supporting pin 3 and being in contraction state, the rear end supporting pin 3 can stretch to the cylindrical shell of position-limiting drum 8; When support pin 3 be in stretch out state time, the front end supporting pin 3 can be passed diode case 2 through hole and insert the supported hole that suspension electrode 1 outer ring is arranged, like this when diode does not work, support pin 3 to support suspension electrode 1, during diode operation, support pin 3 can extract out from the supported hole of suspension electrode 1 moment, suspension electrode 1 freely falling body, because the operating time of pulse diode is very short, the moment tandem working of electron beam diode and suspension electrode 1 can be realized, meet the scientific research and testing requirement of tandem diode.
As shown in Figure 3, three support pins 3 and corresponding bracing or strutting arrangement 11 pairs of suspension electrodes 1 are adopted to support, wherein two support pins 3 are symmetrical arranged in the horizontal direction, another support pin 3 directly over vertical direction arrange, support pin not arrange in the below of suspension electrode 1, that can avoid causing due to the Action of Gravity Field of suspension electrode 1 withdraws smooth problem.When high-voltage diode works, rely on electromagnetic force, three support pin 3 and withdraw simultaneously, and high-field electrode is realizing suspension work instantaneously.
Fig. 4 is bracing or strutting arrangement drive circuit schematic diagram of the present invention, and drive circuit comprises storage capacitor C1, thyratron U1, solenoid 7, delayer T1 and divider resistance unit.Wherein storage capacitor C1, thyratron U1 and solenoid 7 loop in series, a pole plate ground connection of storage capacitor C1; Divider resistance unit is connected in parallel on the two ends of solenoid 7, described divider resistance unit comprises divider resistance R1, R2 of two tandem workings, the input of described delayer T1 electrically connects between two divider resistances, and output connects with the prime trigger element of electron beam diode.By extracting the low-voltage arm resistance signal in divider resistance unit, as monitoring and synchronous control signal.
First charge to storage capacitor C1 during work, treat that capacitor is charged to setting voltage, trigger thyratron U1 by prime trigger element, solenoid 7 produces electromagnetic force by electric current and drives the iron core of bracing or strutting arrangement to drive support pin to work together; When employing three tunnel supports pin or multichannel supports pin work, the high-voltage DC power supply adopting multi-channel parallel to export is simultaneously to the capacitor charging in multiple loop, after charging terminates, triggered the thyratron U1 in multichannel drive circuit by prime trigger element simultaneously, drive the solenoid 7 in respective discharge loop, multiple support pin 3 synchronous working, synchronously withdraws, extract the synchronizing signal of solenoid 7 simultaneously, and after time delay, export electron beam diode prime trigger source to.
Synchronous working in flow chart at the bracing or strutting arrangement drive circuit of Fig. 5 with the time delay of diode, when storage capacitor C1 charging complete, and electron beam two pole instrumentation tubes ready after, first prime manual triggers is adopted to connect thyratron U1, drive circuit is started working, and under the effect of electromagnetic force, supports pin 3 and withdraws, due to the cause of impulse stroke, support pin and withdraw the time needing large approximate number millisecond; Discharge simultaneously at drive circuit to solenoid 7, the signal of solenoid is extracted by divider resistance, with this signal trigger delayer DG535, after the output signal time delay 5ms of DG535, equal its time of delay to support the pin departure time, then the prime clock of automatic triggerable electronic bundle diode, within the 5ms time, diode high pressure suspending electrode supporting scope withdrawn out completely by bracing or strutting arrangement, suspension electrode freely falling body, pulse diode and suspension electrode work, realize the tandem working of tandem diode simultaneously.Prime clock operating time due to electron beam diode very short about 2 μ s, therefore the run duration that its operating time supports pin relative to drive circuit can be ignored.
Provide embody rule example below: " Flash II " is 2 μ s from prime clock to the diode operation time, suspension electrode is removing freely falling body 125 μm in the 5ms time in support process, drive circuit can drive and support needle stroke 30mm within the operating time of 5ms, the degree of depth of position-limiting drum is greater than 40mm, be convenient to hold and support the movement of pin in inside, storage capacitor adopts the large value capacitor of 1mF/2kV, solenoid adopts the thick enamelled wire of 1mm to be wound on a work shape nylon bracket, the number of turn 200 circle, nylon bracket is fixed on the barrel of housing.This device has achieved the work of single suspension electrode, and can be applied in the work of many suspension electrodes by further genralrlization.

Claims (8)

1. a Cascade-stage-type electron beam diode, comprises electron beam diode shell (2), diode anode (10) and diode cathode (9), it is characterized in that:
Also comprise at least one suspension electrode (1) be arranged between diode anode (10) and diode cathode (9) and the multiple bracing or strutting arrangements (11) be arranged on electron beam diode shell (2); Each suspension electrode is at least supported by three bracing or strutting arrangements (11);
The center of described suspension electrode (1), diode anode (10) and diode cathode (9) is on same straight line, and the working face of suspension electrode (1) is parallel to diode anode (10) and diode cathode (9); Described suspension electrode (1) outer ring is provided with at least three supported holes;
Described bracing or strutting arrangement (11) comprises support pin (3), housing (4), spring (5), iron core (6), solenoid (7) and position-limiting drum (8),
Described electron beam diode shell (2) is provided with through hole;
Described housing (4) is tubular structure, it is upper and just to through hole that its openend is fixed on electron beam diode shell (2), its non-openend arranges centre bore, and described position-limiting drum (8) is buckled on the centre bore of housing (4);
The barrel that described solenoid (7) is arranged on housing (4) is outside, it is inner that described spring (5) is arranged on housing (4), one end of described spring (5) withstands on iron core (6), its other end withstands on the non-openend of housing (4), the middle part of described support pin (3) is fixed on iron core (6), insert after its inner through hole passed on electron beam diode shell (2) in the supported hole that suspension electrode (1) outer ring is arranged, its outer end is stretched in position-limiting drum (8) after passing the centre bore of spring (5) and housing (4) non-openend, move along housing (4) axis direction under the effect of the electromagnetic force that described iron core (6) can produce in solenoid (7) and spring (5).
2. Cascade-stage-type electron beam diode according to claim 1, it is characterized in that: also comprise the drive circuit driving bracing or strutting arrangement, described drive circuit comprises storage capacitor (C1), thyratron (U1), divider resistance unit and delayer (T1), wherein storage capacitor (C1), thyratron (U1) and solenoid (7) loop in series, and the tie point ground connection of storage capacitor (C1) and solenoid (7); Divider resistance unit is connected in parallel on the two ends of solenoid (7), described divider resistance unit comprises the divider resistance (R1, R2) of two tandem workings, the input of described delayer (T1) electrically connects between two divider resistances, and output connects with the prime trigger element of electron beam diode.
3. Cascade-stage-type electron beam diode according to claim 1 and 2, is characterized in that: each suspension electrode is at least supported by three bracing or strutting arrangements (11); The support pin (3) of these three bracing or strutting arrangements is separately positioned on directly over corresponding suspension electrode (1), front-left and front-right.
4. Cascade-stage-type electron beam diode according to claim 3, it is characterized in that: described suspension electrode (1) is one, and the gap between suspension electrode (1) and diode cathode (9) is 6.4 ~ 6.8mm, the gap between suspension electrode (1) and diode anode (10) is 8.6 ~ 8.8mm.
5. Cascade-stage-type electron beam diode according to claim 3, is characterized in that: the non-openend of described housing (4) is provided with multiple gas communication hole communicated with position-limiting drum (8).
6. Cascade-stage-type electron beam diode according to claim 3, is characterized in that: described spring (5) is turriform spring, and described iron core (6) is arranged on the large footpath place of turriform spring.
7. Cascade-stage-type electron beam diode according to claim 3, is characterized in that: described iron core (6) adopts soft magnetic material pure iron to make, and described support pin (3) adopts aluminium to make.
8. Cascade-stage-type electron beam diode according to claim 3, it is characterized in that: between described housing (4) centre bore and electron beam diode shell (2) through hole, axiality is less than 0.04mm, housing (4) center-hole diameter and electron beam diode shell (2) through-hole diameter with support pin diameter deviation ± 0.02mm.
CN201310309276.3A 2013-07-22 2013-07-22 A kind of Cascade-stage-type electron beam diode Expired - Fee Related CN103413744B (en)

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CN111900067B (en) * 2020-06-11 2021-07-13 西安交通大学 Bremsstrahlung load based on serial connection of diode and triode

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CN103077875A (en) * 2012-12-29 2013-05-01 西北核技术研究所 Vacuum diode with high current, small focal spot and long service life

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1087419A2 (en) * 1994-11-28 2001-03-28 Marconi Medical Systems, Inc. X-ray tube assemblies
US7236568B2 (en) * 2004-03-23 2007-06-26 Twx, Llc Miniature x-ray source with improved output stability and voltage standoff
CN1971834A (en) * 2005-11-07 2007-05-30 科美特有限公司 Nanofocus X-ray tube
FR2893759A1 (en) * 2005-11-23 2007-05-25 Gen Electric X-ray tube for e.g. medical imaging, has gasket located near head of anode, between shaft and support, to ensure interface between lubricant liquid and vacuum, where gasket has clearance spaces forming labyrinth seal
CN101042976A (en) * 2007-03-27 2007-09-26 西北核技术研究所 Repeat frequency fast pulse hard x-ray generator
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