CN103503126A - 使用重复结构的基于设计的检验 - Google Patents
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
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- G01N21/84—Systems specially adapted for particular applications
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Abstract
本发明提供用于使用重复结构的基于设计的检验的系统及方法。
Description
相关申请案交叉参考
本申请案主张于2011年3月25日提出申请的标题为“使用重复结构的基于设计的检验(Design-based inspection using repeating structures)”的第61/467,964号美国临时申请案的优先权,所述申请案以引用方式如同其完全陈述于本文中一股并入。
技术领域
本发明一股来说涉及用于使用重复结构的基于设计的晶片检验的系统及方法。
背景技术
以下说明及实例并不由于其包含于此章节中而被认为是现有技术。
在半导体制造过程期间在各种步骤处使用检验过程以检测晶片上的缺陷从而在制造过程中促成较高成品率及因此较高利润。检验始终是制作半导体装置的重要部分。然而,随着半导体装置的尺寸减小,检验对可接受的半导体装置的成功制造来说变得越来越重要,因为较小缺陷可能致使装置失效。
检验过程可受晶片上的各种噪声源限制。举例来说,一种常见检验方法是裸片对裸片方法,所述裸片对裸片方法涉及将检验系统的针对形成于晶片上的不同裸片中的对应位置产生的输出进行比较。以此方式,可将针对多个裸片中的相似结构产生的输出进行比较且可使用比较的结果来检测那些结构中的缺陷。然而,由于跨越晶片的过程变化,不同裸片中的对应位置可具有不同特性,例如虽然实际上不是缺陷但在裸片对裸片方法中可被误识别为缺陷的膜厚度及色彩变化。可通过增加用于检测缺陷的阈值来适应裸片之间的变化。然而,增加阈值将明显消除对晶片上的最小缺陷的检测。
一些检验方法及/或系统通过将针对单个裸片内的多个位置产生的输出进行比较来检测缺陷。在当前检验系统中通常存在利用此概念的两种类型的方法。然而,其适用性有限。举例来说,对于阵列区域(例如裸片的SRAM或DRAM区域),通过知晓阵列内的单元大小,可在晶片检验器上执行单元对单元检验。还存在在检验期间分析图像流并通过执行自动相关分析且寻找周期性图案来寻找重复结构的一些现有系统。然而,这两种方法均受限于具有以某一周期的某一周期性(例如,沿x方向)的布局。
因此,开发不具有上文所描述的缺点中的一者或一者以上的检验系统及/或方法将是有利的。
发明内容
决不应将以下对各种实施例的说明解释为限制所附权利要求书的标的物。
一个实施例涉及一种用于检验晶片的计算机实施方法。所述方法包含识别晶片的设计中的结构的多个实例。所述结构具有相同或实质上相同的几何特性。使用设计的设计数据来执行识别多个实例。所述方法还包含将检验系统的针对形成于晶片上的多个实例中的两者或两者以上产生的输出彼此进行比较。所述多个实例中的所述两者或两者以上位于所述晶片上的相同裸片内。另外,所述方法包含基于所述比较的结果而检测所述晶片上的缺陷。使用计算机系统来执行所述识别、比较及检测步骤。
可如本文中所描述来进一步执行上文所描述的方法的步骤中的每一者。另外,可使用本文中所描述的系统中的任一者来执行所述方法的步骤中的每一者。此外,所述方法可包含本文中所描述的任何其它步骤。
另一实施例涉及一种存储可在计算机系统上执行以用于执行用于检验晶片的计算机实施方法的程序指令的非暂时计算机可读媒体。可通过所述程序指令执行的计算机实施方法包含上文所描述的计算机实施方法的步骤。可如本文中所描述来进一步配置所述计算机可读媒体。
额外实施例涉及一种经配置以检验晶片的系统。所述系统包含经配置以产生针对晶片的输出的检验子系统。所述系统还包含经配置以用于执行上文所描述的计算机实施方法的步骤的计算机子系统。可如本文中所描述来进一步配置所述系统。
附图说明
当阅读以下详细说明并参考随附图式时,本发明的其它目标及优点将变得显而易见。
图1是图解说明单元实例化分析的一个实施例的示意图;
图2是图解说明根据设计“层”意图本身不证自明的相似结构的一个实例的示意图;
图3是图解说明迭代算法可如何对重复几何形状进行排级及检测重复几何形状的一个实施例的示意图;
图4是图解说明非暂时计算机可读媒体的一个实施例的框图;且
图5是图解说明系统的一个实施例的框图。
虽然易于对本发明做出各种修改及替代方案,但其特定实施例以实例方式展示于图式中且将在本文中加以详细描述。然而,应理解,图式及其详细说明并非打算将本发明限制于所揭示的特定形式,而是相反,本发明打算涵盖归属于如由所附权利要求书所界定的本发明精神及范围内的所有修改形式、等效形式及替代方案。
具体实施方式
现在转到图式,注意,各图并未按比例绘制。特定来说,所述图的元件中的一些元件的比例被极大地扩大以强调元件的特性。还注意,所述各图并未按相同比例绘制。已使用相同参考编号指示可以相似方式配置的在一个以上图中展示的元件。
本文中描述使用重复结构的基于设计的检验的各种实施例。一个实施例涉及一种用于检验晶片的计算机实施方法。所述方法包含识别晶片的设计中的结构的多个实例。所述结构具有相同或实质上相同的几何特性。如本文中所使用的术语“几何特性”打算意指结构的与所述结构的几何形状相关的任何特性。因此,“几何特性”可包含例如宽度、高度、侧面轮廓、结构形状、二维形状、三维形状等特性。因此,具有相同几何特性的结构将具有相同宽度、高度、侧面轮廓、结构形状、二维形状、三维形状等。术语“实质上相同的几何特性”指代不同的程度未达到在本文中所描述的方法中差异本身将被检测为缺陷的程度的几何特性。另外,不同几何特性可变化且仍被视为实质上相同的程度可取决于几何特性本身而变化。举例来说,对于一个特性,相差大约1%的几何特性可被视为实质上相同,而对于另一特性,相差大约5%的几何特性可被视为实质上相同。
如本文中所使用的术语“结构”打算意指形成于晶片上的经图案化结构。换句话说,本文中所描述的“结构”并非仅是形成于晶片上的膜。另外,如本文中所使用的术语“结构”是指单个连续结构。换句话说,如本文中所使用的术语“结构”并非指个别结构的集合,例如线阵列、触点阵列或任何其它组离散结构。而是,包含于一组中的线、触点或离散结构中的每一者将各自为如本文中所使用的术语“结构”。
使用设计的设计数据来执行识别多个实例。举例来说,本文中所描述的实施例可使用半导体层的设计布局来确定在裸片布局中彼此相对紧密接近的“相似”结构,以便在检验期间可将这些相似结构彼此进行比较且将“离群值”标记为缺陷,基本假定是,此些缺陷位置将为所有此些相似结构的实质上小的部分。在一个实施例中,不使用检验系统的针对晶片产生的输出来执行识别多个结构。而是,如上文所描述,可使用设计数据且在一些情况中仅使用设计数据来识别重复结构。所述设计数据可能不包含或为使用物理晶片获取的数据或信息。换句话说,设计数据并非通过扫描物理晶片而产生的输出或基于此输出而产生的信息或数据。由于在本文中所描述的实施例中从对设计数据的分析识别重复结构,因此不存在引入到算法中的图像噪声。本文中所描述的实施例利用以下事实:一些图像计算机系统可跨越裸片读取大数据刈幅(swath),且可使用本文中所描述的实施例来确定所述图像缓冲器内的某些几何形状群组的所有位置。
可使用数种技术来找到设计中的重复结构。举例来说,在一个实施例中,在不使用多个结构的周期性的情况下执行识别所述结构。在另一实施例中,所述多个实例不以任何周期性在所述设计中发生。举例来说,本文中所描述的实施例可寻找相似图案,即使其不是周期性的。
在一些实施例中,不基于设计的单元大小来执行识别多个结构。以此方式,本文中所描述的实施例可独立于单元大小,此不同于用于阵列检验的一些方法。举例来说,在一些当前所使用的用于阵列区域(例如裸片的SRAM或DRAM区域)的方法中,通过知晓阵列内的单元大小,在晶片检验器上执行单元对单元检验。然而,这些方法受限于具有以某一周期的某一周期性(例如,沿x或扫描方向)的布局。相比之下,本文中所描述的实施例可利用设计内的某些结构的重复性质,而不管单元大小、周期性、频率及任何其它单元特性如何。因此,本文中所描述的实施例在可用作重复结构的结构的类型、用于检测那些重复结构中的缺陷的算法及对不同重复结构中的缺陷进行分类的方式上可灵活得多。
在一些实施例中,多个实例中的每一者包含设计中的仅一个结构。举例来说,每一重复结构本身可被识别且用作结构的单个实例。以此方式,出于缺陷检测目的,针对一个重复结构的输出可用于与针对相同或实质上相同的重复结构的至少另一者的输出比较。
在另一实施例中,多个实例中的每一者包含设计中的多个结构。举例来说,所述方法可找到出现在布局中的各个地方的几何形状群组。几何形状群组不必以任何固定周期性出现。可如本文中进一步所描述来识别此些几何形状群组。
在一个实施例中,识别多个实例包含使用设计的设计布局层次来识别设计中的相同设计单元的多个实例。以此方式,识别多个实例可包含单元实例化分析。举例来说,在此方法中,检查设计布局层次且识别布局中的相同设计“单元”的实例。特定来说,如图1中所展示,所述方法可包含定义设计中的单元100(例如,单元A、单元B、单元C等)。所述方法还可包含使用具有单元参考(实例化)的设计层次110来在裸片120的设计数据中搜索以找出各种单元(例如,单元A、单元B等)。可假定这些区域在经扫描裸片上看起来相似。
在一些实施例中,识别多个实例包含通过执行构成已知所关注图案的结构与设计数据中的结构的多边形匹配来搜索设计数据以找出已知所关注图案的任何实例。举例来说,如果所关注图案(POI)为先验已知的,那么可通过执行构成POI的图的多边形匹配来搜索设计以找出相同图案的所有位置。
在额外实施例中,识别多个实例包含执行对设计数据的傅里叶分析。举例来说,可通过再现设计或通过分析多边形表示及寻找沿x(比较)方向的周期性来执行对设计的傅里叶分析。
在一个实施例中,使用设计数据的设计层意图来执行识别多个实例。举例来说,某些相似结构可根据设计“层”意图本身而不证自明。在一个此种实例中,通孔/触点层仅为一组相同小结构,且除每一通孔/触点的中心位置及尺寸之外,无需进一步处理来识别“相似性”。在一个特定实例中,如图2中所展示,一个层可为具有通孔的金属层200,且对应通孔设计层210可用于识别每一通孔/触点的中心位置及尺寸。
在另一实施例中,识别多个实例包含以多边形级分析设计数据的设计布局以识别结构的多个实例。以此方式,可以多边形级分析设计布局以找出在设计中的数个地方重复的相邻几何形状的相似集合。这些集合可被标记为属于一个“关心区域群组”且可在裸片内而非在裸片对裸片比较中彼此比较。可用于找到重复结构的算法的一个实例描述于以引用方式如同其完全陈述于本文中一股并入的谷(Gu)等人的“用于层次IC布局的无损失压缩算法(Lossless compression algorithms for hierarchical IC layouts)”(关于半导体制造的IEEE会报(IEEE Transactions on Semiconductor Manufacturing),第21卷,第2期,2008年5月)中。尽管出于压缩设计表示的目的而使用此论文中所描述的算法,但在检验期间还可出于比较目的使用此算法或相似算法来识别重复结构。
在一些实施例中,通过识别设计数据中的可包含于多个实例中的第一结构且接着迭代地搜索设计数据以找出还可包含于具有第一结构的多个实例中的其它结构来执行识别多个实例。举例来说,图3取自上文所引用的论文且展示迭代算法如何对重复几何形状进行排级及检测重复几何形状。特定来说,图3展示单元内子单元检测实例,其中(a)展示第0次迭代;(b)展示第1次迭代;(c)展示第2次迭代;且(d)展示最终结果。在此实例中,如第0次迭代中所展示,所述算法可搜索单元以找出单个选定结构且在单元内找到单个结构的5个实例。所述5个实例中的每一者在单元中具有相同几何特性(例如,形状、尺寸及定向)。算法可接着将子单元定义为图3中所展示的SC(0),找到SC(0)的5个实例,每一者含有结构的一个实例及所述结构周围的一些空间。
在下一迭代中,算法搜索单元以找出接近SC(0)中所包含的第一结构的一个以上实例的其它结构(即,具有彼此相同的几何特性且与第一结构重复的其它结构)的实例。举例来说,如图3中所展示,算法可再次搜索单元且识别位于接近第一“L”形结构的一个以上实例处的两个其它结构。两个其它经识别结构中的每一者具有彼此相同的几何特性(例如,彼此相同的形状及相对于第一结构的相同空间关系)。算法可接着将子单元定义为图3中所展示的SC(1),找到SC(1)的4个实例,每一者含有3个不同结构的一个实例及所述结构周围的一些空间。
算法可执行任何额外数目个迭代。举例来说,如图3中所展示,算法可再次搜索单元且识别位于接近第一“L”形结构的一个以上实例处的一个其它结构。此其它经识别结构的每一实例具有彼此相同的几何特性(例如,相同形状及相对于第一结构的相同空间关系)。算法可接着将子单元定义为图3中所展示的SC(2),找到SC(2)的4个实例,每一者含有4个不同结构的一个实例及所述结构周围的一些空间。还如此实例中所展示,算法可在位于子单元中的一者中及其周围的空间中搜索单元且识别接近第一结构的另一结构。然而,当在其中在第一实例中找到额外结构的对应区域中搜索其它子单元时,在其它子单元中未找到所述其它结构。以此方式,存在所述结构的仅一个实例且其不重复。因此,此其它结构不包含于子单元结果(即,SC(2))中,且此子单元不包含于结果中(例如,其并非另一重复子单元)。因此,如最终结果中所展示,子单元SC(2)定义重复结构的多个(4个)实例中的每一者。
在另一实施例中,多个实例包含结构的至少三个实例。举例来说,不同检验方法可需要结构的不同最小数目的重复。在一个此种实例中,在裸片对裸片型方法中,通过将三个邻近裸片位置进行比较(通过进行两个裸片对比较)来执行缺陷仲裁,其中在每一比较之前进行对准/内插步骤以将像素对准到子像素(通常小于0.05个像素)准确性。所述方法在明场(BF)工具中一次执行一子帧(256像素×256像素)的内插,由实时对准(RTA)系统提供对准偏移(Δx、Δy)。因此可证明,仲裁缺陷位置所需要的结构重复的最小数目为三。因此,为了使用本文中所描述的多个实例来执行相似缺陷仲裁,将需要结构的至少三个实例。然而,在图像帧内具有结构的更多次出现允许使用统计学来以更稳健方式对离群值加旗标。举例来说,在一个实施例中,多个实例包含设计数据中的结构的所有实例。
所述方法还包含将检验系统的针对形成于晶片上的多个实例中的两者或两者以上产生的输出彼此进行比较。所述多个实例中的所述两者或两者以上位于晶片上的相同裸片内。以此方式,本文中所描述的实施例绕过随机模式缺陷检测的裸片对裸片方法且以某一方式模拟阵列模式检测算法。本文中所描述的实施例优于裸片对裸片随机模式的优点是,移除了裸片对裸片噪声源且可潜在地降低检测阈值借此实现更敏感检验。
在一个实施例中,在比较步骤之前,方法包含将结构的多个实例内插到共同像素栅格。举例来说,可在执行比较之前将结构的所有出现内插到共同像素栅格(区别其灰阶值与对应像素位置)。明显地,内插误差将引入噪声源。然而,对于经正确取样的图像,此噪声源可比裸片对裸片噪声小得多,特别是在基于电子束的检验系统中。
在另一实施例中,在检验期间且在比较步骤之前,方法包含将针对多个实例中的两者或两者以上产生的输出对准于所述输出的对应像素流中。举例来说,本文中所描述的实施例假定可在检验期间将相似区域(根据分析设计而检测)与对应像素流准确地对准。
方法进一步包含基于比较的结果而检测晶片上的缺陷。举例来说,检测缺陷可包含将某一阈值应用于比较步骤的结果,且可将确定为高于阈值的任何输出识别为对应于缺陷。阈值可包含此项技术中已知的任何适合阈值。
使用计算机系统来执行所述识别、比较及检测步骤。可如本文中所描述来进一步配置计算机系统。
本文中所描述的实施例具有优于其它检验系统及方法的若干个优点。举例来说,通过将相同裸片内的两个结构进行比较而非如针对检验逻辑区域而进行的裸片对裸片比较,消除了例如膜厚度、焦点等的改变的裸片对裸片噪声。另外,本文中所描述的实施例可找到裸片内的某一组几何形状的所有重复,而当前方法寻找周期性(沿扫描(及比较)方向)。因此,本文中所描述的实施例比当前方法更通用。此外,本文中所描述的实施例使用设计数据而非试图从其中定位重复结构的晶片图像来推断。使用所述设计具有以下优点:其为未受图像获取系统中的图像噪声源破坏的晶片图像应当看似的理想表示(意图)。
本文中所描述的所有方法可包含将方法的一个或一个以上步骤的结果存储于存储媒体中。所述结果可包含本文中所描述的结果中的任一者且可以此项技术中已知的任何方式来存储。所述存储媒体可包含此项技术中已知的任何适合计算机可读存储媒体。在已存储结果之后,可在存储媒体中存取结果且由本文中所描述的方法或系统实施例中的任一者来使用结果,将其格式化以用于向用户显示,由另一软件模块、方法或系统来使用所述结果等。此外,可“永久地”、“半永久地”、暂时地存储结果或可存储结果达某一时间周期。
图4图解说明存储可在计算机系统404上执行以用于执行用于检验晶片的计算机实施方法的程序指令402的非暂时计算机可读媒体400的一个实施例。可在计算机系统404上执行程序指令402的方法可包含本文中所描述的任何方法的任何步骤。在一些实施例中,计算机系统404可为如本文中进一步所描述的检验系统的计算机系统。在一些替代实施例中,计算机系统可通过网络连接到检验系统。然而,在其它实施例中,计算机系统404可不耦合到检验系统或包含于检验系统中。在一些此类实施例中,可将计算机系统404配置为独立计算机系统。可如本文中所描述来进一步配置计算机可读媒体400、程序指令402及计算机系统404。
实施例如本文中所描述的那些方法的方法的程序指令402可存储于计算机可读媒体400上。所述计算机可读媒体可为存储媒体,例如只读存储器、随机存取存储器、磁盘或光盘、磁带或其它非暂时计算机可读媒体。
可以包含基于程序的技术、基于组件的技术及/或面向对象的技术以及其它的各种方式中的任一者来实施程序指令。举例来说,可视需要使用ActiveX控件、C++对象、C#、JavaBeans、微软基础类别(“MFC”)或者其它技术或方法来实施程序指令。
计算机系统可包含此项技术中已知的任何适合计算机系统。举例来说,计算机系统404可采取各种形式,包含个人计算机系统、大型计算机系统、工作站、图像计算机、并行处理器或此项技术中已知的任何其它装置。一股来说,术语“计算机系统”可广义地定义为涵盖具有执行来自存储器媒体的指令的一个或一个以上处理器的任何装置。
另一实施例涉及一种经配置以检验晶片的系统。举例来说,如图5中所展示,所述系统包含经配置以产生针对晶片的输出的检验子系统500。所述检验子系统可包含任何市售晶片检验系统的检验子系统。检验子系统还可经配置以用于任何适合的检验方法,例如,明场检验、暗场检验,光学(基于光的)检验、基于电子束的检验等或其某一组合。所述系统还包含经配置以用于执行上文所描述的方法的步骤的计算机子系统502。可如上文关于计算机系统404所描述来进一步配置计算机子系统502。可如本文中所描述来进一步配置计算机子系统及系统。
鉴于此说明,所属领域的技术人员可明了本发明的各种方面的其它修改形式及替代实施例。举例来说,本发明提供用于使用重复结构的基于设计的检验的系统及方法。因此,此说明应解释为仅为说明性,且其目的在于教示所属领域的技术人员实施本发明的一股方式。应理解,本文中所展示及描述的本发明的形式应被视为目前优选实施例。如所属领域的技术人员在受益于本发明的此说明之后均将明了,元件及材料可替代本文中所图解说明及描述的那些元件及材料,可颠倒部件及过程,且可独立地利用本发明的某些特征。可在不背离如所附权利要求书所描述的本发明精神及范围的情况下对本文中所描述的元素做出改变。
Claims (19)
1.一种用于检验晶片的计算机实施方法,其包括:
识别晶片的设计中的结构的多个实例,其中所述结构具有相同或实质上相同的几何特性,且其中使用所述设计的设计数据来执行所述识别;
将检验系统的针对形成于所述晶片上的所述多个实例中的两者或两者以上产生的输出彼此进行比较,其中所述多个实例中的所述两者或两者以上位于所述晶片上的相同裸片内;及
基于所述比较的结果而检测所述晶片上的缺陷,其中使用计算机系统来执行所述识别、所述比较及所述检测。
2.根据权利要求1所述的方法,其中在不使用所述结构的周期性的情况下进一步执行所述识别。
3.根据权利要求1所述的方法,其中不使用检验系统的针对晶片产生的输出来执行所述识别。
4.根据权利要求1所述的方法,其中不基于所述设计的单元大小而执行所述识别。
5.根据权利要求1所述的方法,其中所述多个实例在所述设计中不以任何周期性出现。
6.根据权利要求1所述的方法,其中所述多个实例中的每一者包括所述设计中的仅一个结构。
7.根据权利要求1所述的方法,其中所述多个实例中的每一者包括所述设计中的多个结构。
8.根据权利要求1所述的方法,其中所述识别包括使用所述设计的设计布局层次来识别所述设计中的相同设计单元的多个实例。
9.根据权利要求1所述的方法,其中所述识别包括通过执行构成已知所关注图案的所述结构与所述设计数据中的所述结构的多边形匹配来搜索所述设计数据以找出所述已知所关注图案的任何实例。
10.根据权利要求1所述的方法,其中所述识别包括执行对所述设计数据的傅里叶分析。
11.根据权利要求1所述的方法,其中使用所述设计数据的设计层意图来进一步执行所述识别。
12.根据权利要求1所述的方法,其中所述识别包括以多边形级分析所述设计数据的设计布局以识别所述结构的所述多个实例。
13.根据权利要求1所述的方法,其中通过识别所述设计数据中的可包含于所述多个实例中的第一结构且接着迭代地搜索所述设计数据以找出还可包含于具有所述第一结构的所述多个实例中的其它结构来执行所述识别。
14.根据权利要求1所述的方法,其中所述多个实例包括所述结构的至少三个实例。
15.根据权利要求1所述的方法,其中所述多个实例包括所述设计数据中的所述结构的所有实例。
16.根据权利要求1所述的方法,其进一步包括在所述比较之前,将所述结构的所述多个实例内插到共同像素栅格。
17.根据权利要求1所述的方法,其进一步包括在检验期间且在所述比较之前,将针对所述多个实例中的所述两者或两者以上产生的所述输出对准于所述输出的对应像素流中。
18.一种非暂时计算机可读媒体,其存储可在计算机系统上执行以用于执行用于检验晶片的计算机实施方法的程序指令,其中所述计算机实施方法包括:
识别晶片的设计中的结构的多个实例,其中所述结构具有相同或实质上相同的几何特性,且其中使用所述设计的设计数据来执行所述识别;
将检验系统的针对形成于所述晶片上的所述多个实例中的两者或两者以上产生的输出彼此进行比较,其中所述多个实例中的所述两者或两者以上位于所述晶片上的相同裸片内;及
基于所述比较的结果而检测所述晶片上的缺陷。
19.一种经配置以检验晶片的系统,其包括:
检验子系统,其经配置以产生针对晶片的输出;及
计算机子系统,其经配置以用于:
识别所述晶片的设计中的结构的多个实例,其中所述结构具有相同或实质上相同的几何特性,且其中使用所述设计的设计数据来执行所述识别;
将所述检验子系统的针对形成于所述晶片上的所述多个实例中的两者或两者以上产生的输出彼此进行比较,其中所述多个实例中的所述两者或两者以上位于所述晶片上的相同裸片内;及
基于所述比较的结果而检测所述晶片上的缺陷。
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DE112012001439T5 (de) | 2014-01-16 |
DE112012001439B4 (de) | 2020-09-10 |
CN103503126B (zh) | 2016-08-31 |
WO2012134867A2 (en) | 2012-10-04 |
KR101787161B1 (ko) | 2017-10-18 |
WO2012134867A3 (en) | 2012-12-27 |
TW201241950A (en) | 2012-10-16 |
US9170211B2 (en) | 2015-10-27 |
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US20120243773A1 (en) | 2012-09-27 |
TWI533383B (zh) | 2016-05-11 |
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