CN103515445A - Thin film transistor and preparation method thereof - Google Patents

Thin film transistor and preparation method thereof Download PDF

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Publication number
CN103515445A
CN103515445A CN201210202201.0A CN201210202201A CN103515445A CN 103515445 A CN103515445 A CN 103515445A CN 201210202201 A CN201210202201 A CN 201210202201A CN 103515445 A CN103515445 A CN 103515445A
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Prior art keywords
film transistor
preparation
zinc oxide
electrode
gate dielectric
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Inventor
韩德栋
蔡剑
刘力锋
王薇
王亮亮
耿友峰
王漪
张盛东
刘晓彦
康晋锋
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BOE Technology Group Co Ltd
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Peking University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

The invention discloses a thin film transistor and a preparation method thereof. The thin film transistor is prepared on a glass or plastic substrate; an aluminium-doped zinc oxide semiconductor material is taken as a conductive channel layer of a transparent semiconductor; and according to a special process adopted in the preparation process, an appropriate amount of oxygen is added, so that the aluminium-doped zinc oxide presents a semi-conductor property and a high migration property, and the performance of the thin film transistor is effectively improved. The preparation method is simple in step and low in preparation cost, has a positive effect on improving the performance of the thin film transistor device, improves the device performance and lowers the preparation cost. At the same time, a zinc oxide aluminium film is an environment-friendly material, the process is simple, the preparation cost is low, and thus the thin film transistor and the preparation method thereof have wide application prospect.

Description

A kind of thin-film transistor and preparation method thereof
Technical field
The invention belongs to flat panel display field, be specifically related to a kind of thin-film transistor in glass substrate or plastic and preparation method thereof.
Background technology
In recent years, rapidly, traditional flat panel display is in continuous update in flat panel display development.Wherein, the technology of thin-film transistor is very crucial technology, and traditional handicraft is used amorphous silicon film transistor technology, afterwards, researchs and develops again polysilicon technology.But the mobility of amorphous silicon is very low, be not suitable for the demand of novel Display Technique, polysilicon technology again because preparation temperature is high, complex process, large-area uniformity be poor etc., and factor is difficult to practical application, the development of Display Technique has run into bottleneck.Recently developed again a kind of novel thin film transistor technology based on Zinc oxide-base.
Why zinc oxide semiconductor thin film material is subject to extensive concern is because it has lot of advantages:
(1) be easy to preparation: a lot of preparation methods can the good zinc oxide semiconductor thin film material of acquired character, such as our conventional magnetron sputtering method, molecular beam epitaxy MBE, sol-gel process Sol-Gel, metallo-organic compound chemical gaseous phase deposition method MOCVD, vacuum vapour deposition, atomic layer deposition method ALD etc. technique preparation method can be used for studying zinc oxide semiconductor thin film material;
(2) preparation temperature is low: zinc oxide semiconductor thin film material just can prepare at very low temperature, this is conducive to be applied in the even low temperature process requirement of preparing thin film transistor on plastic substrate of glass, is applicable to very much using in flat panel display with in flexible demonstration;
(3) transparency is high: zinc oxide is semiconductor material with wide forbidden band, and in visible-range, transmitance can reach more than 80%, for flat panel display, can increase light transmission rate, increases aperture opening ratio;
(4) electric property is good: zinc oxide semiconductor thin film material has good electrology characteristic, and electron mobility is more much higher than traditional amorphous silicon semiconductor thin-film material, and stability is good;
(5) nontoxic, environment-friendly materials: zinc oxide semiconductor thin film material does not have toxicity, are asepsis environment-protecting materials, and some materials that semicon industry is used are at present toxic materials, can, to environment, use asepsis environment-protecting material to be conducive to protection of the environment;
(6) material price is low: the content of zinc in the earth is very abundant, can as indium, not be rare metal, therefore cheap, and this is undoubtedly very attracting advantage concerning this expensive industry of semiconductor.
At present, about the research of Zinc oxide based semiconductor thin-film material, have a lot, such as zinc-gallium oxide ZnO+Ga 2o 3, indium zinc oxide ZnO+In 2o 3, cadmium-zinc oxide ZnO+Gd 2o 3, magnesium zinc ZnO+MgO, indium zinc oxide gallium (Indium Gallium Zinc Oxide) IGZO etc.Wherein, IGZO is the transparent semiconductor material being expected most at present, yet because the indium In in material is rare element, in the earth, content is rare and poisonous, prepares this height and not environmental protection, is therefore difficult to application in extensive life.Zinc oxide aluminum ZnO+Al 2o 3also rarer people's research, and zinc oxide aluminum is treated as transparent electric conducting material research conventionally.
Summary of the invention
For problems of the prior art, the present invention is proposed.
One object of the present invention is to provide a kind of thin-film transistor.
Thin-film transistor of the present invention comprises: substrate, gate electrode, gate dielectric layer, channel layer, source electrode and drain electrode, wherein, on substrate, form gate electrode, on gate electrode, form gate dielectric layer, on gate dielectric layer, form channel layer, and forming respectively source electrode and drain electrode at the two ends of channel layer, the material of channel layer adopts the zinc oxide semiconductor material of mixing aluminium, wherein the content of aluminium is 1% ~ 10%(quality).
The material of substrate is transparent glass or flexible plastics.
The material of gate electrode is the transparent electric conducting material of tin indium oxide ITO or zinc oxide aluminum AZO etc.
The material of gate dielectric layer adopts the insulating material of silicon dioxide or silicon nitride etc.
Source electrode and the very transparent electric conducting material of tin indium oxide ITO or zinc oxide aluminum AZO etc. that leaks electricity.
Another object of the present invention is to provide a kind of preparation method of thin-film transistor.
The preparation method of thin-film transistor of the present invention comprises the following steps:
1) at the conductive film of the Grown layer of transparent of glass or plastics, chemical wet etching forms gate electrode;
2) and then the grow gate dielectric material of one deck insulation, chemical wet etching forms gate dielectric layer;
3) one deck of growing on gate dielectric layer is mixed the zinc oxide semiconductor material of aluminium, and passes into appropriate oxygen, and chemical wet etching forms channel layer;
4) growth layer of conductive film, chemical wet etching forms source electrode and drain electrode;
5) growth one deck passivation dielectric layer, photoetching and etching form the fairlead of gate electrode, source electrode and drain electrode;
6) growth layer of metal film, photoetching and etching form metal electrode and interconnection.
Wherein, in step 1), the conductive film that formation gate electrode is grown adopts the transparent electric conducting material of tin indium oxide ITO or zinc oxide aluminum AZO etc.
In step 2) in, the gate dielectric material that formation gate dielectric layer is grown adopts the insulating material of silicon dioxide or silicon nitride etc.
In step 3), the zinc oxide semiconductor material that utilizes sputtering technology growth one deck to mix aluminium forms channel layer, and in sputter procedure, adds 3% ~ 20%(gas flow) appropriate oxygen; The target that sputter is used is the zinc-oxide ceramic target of mixing aluminium, and wherein the content of aluminium is 1% ~ 10%(quality).
In step 4), the conductive film that formation source electrode and drain electrode are grown adopts the transparent electric conducting material of tin indium oxide ITO or zinc oxide aluminum AZO etc.
Beneficial effect of the present invention:
The invention provides a kind of preparation method who prepares thin-film transistor on the substrate of glass or plastics, employing is mixed the zinc oxide semiconductor material of aluminium as the channel layer of transparent semiconductor conduction, in preparation process, adopt Particular craft to add appropriate oxygen to make the zinc oxide of mixing aluminium present characteristic of semiconductor, and demonstrate high migrate attribute, effectively raise the performance of thin-film transistor.Preparation method's step of the present invention is simple, and preparation cost is low, to improving the performance of film transistor device, has good effect, has improved device performance, has reduced preparation cost.Meanwhile, zinc oxide aluminum film is environment-friendly materials, and technique is simple, and preparation cost is low, is applicable to transparent demonstration and flexible display technologies, is with a wide range of applications.
Accompanying drawing explanation
The profile that Fig. 1 is the thin-film transistor that adopts preparation method of the present invention and prepare;
The vertical view that Fig. 2 is the thin-film transistor that adopts preparation method of the present invention and prepare;
The main technological steps of the preparation method's of Fig. 3 (a)～(e) show a successively thin-film transistor of the present invention embodiment, wherein, (a) be the structural representation of substrate, (b) for forming the processing step of gate electrode, (c) for forming the processing step of gate dielectric layer, (d) for forming the processing step of channel layer, be (e) processing step of formation source electrode and drain electrode.
Embodiment
Below in conjunction with accompanying drawing, by specific embodiment, further set forth the present invention.
As depicted in figs. 1 and 2, thin-film transistor of the present invention comprises: substrate 1, gate electrode 2, gate dielectric layer 3, channel layer 4, source electrode and drain electrode 5, wherein, on substrate 1, form gate electrode 2, on gate electrode 2, form gate dielectric layer 3, on gate dielectric layer 3, form channel layer 4, and form respectively source electrode and drain electrode 5 at the two ends of channel layer 4.
An embodiment of the preparation manufacture method of thin-film transistor of the present invention, is comprised the following steps to shown in Fig. 3 (e) by Fig. 3 (a):
1) adopt transparent glass or plastics as substrate 1, as shown in Fig. 3 (a), adopt the conductive film of the ITO of magnetron sputtering technique growth one deck 10 ~ 100 nanometer thickness on substrate 1, then chemical wet etching goes out gate electrode 2, as shown in Figure 3 (b);
2) utilize the gate dielectric material of the silicon dioxide of plasma enhanced chemical vapor deposition method PECVD growth one deck 50～200 nanometer thickness, then chemical wet etching forms gate dielectric layer 3, as shown in Figure 3 (c);
3) utilize sputtering technology growth one deck to mix the zinc oxide semiconductor material of aluminium, the oxygen that adds 3%-20% in sputter procedure, chemical wet etching forms channel layer 4, and the target that sputter is used is the zinc-oxide ceramic target of mixing aluminium, the content of aluminium is 1%-10%, as shown in figure (d);
4) adopt the conductive film of the ITO of magnetron sputtering technique growth one deck 20 ~ 300 nanometer thickness, then chemical wet etching forms source electrode and drain electrode 5, as shown in figure (e);
5) according to standard technology growth one deck passivation dielectric layer, photoetching and etching form the fairlead of gate electrode, source electrode and drain electrode;
6) metallic film of growth one deck Al or transparent conduction, photoetching and etching form electrode and interconnection.
Finally it should be noted that publicizing and implementing routine object is to help further to understand the present invention, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the disclosed content of embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.

Claims (10)

1. a thin-film transistor, it is characterized in that, described thin-film transistor comprises: substrate (1), gate electrode (2), gate dielectric layer (3), channel layer (4), source electrode and drain electrode (5), wherein, at the upper described gate electrode (2) that forms of described substrate (1), at the upper described gate dielectric layer (3) that forms of described gate electrode (2), at the upper described channel layer (4) that forms of described gate dielectric layer (3), and at the two ends of described channel layer (4), form respectively described source electrode and drain electrode (5), the material of described channel layer (4) adopts the zinc oxide semiconductor material of mixing aluminium, wherein the content of aluminium is 1% ~ 10%(quality).
2. thin-film transistor as claimed in claim 1, is characterized in that, the material of described substrate is transparent glass or flexible plastics.
3. thin-film transistor as claimed in claim 1, is characterized in that, the material of described gate electrode is the transparent electric conducting material of tin indium oxide ITO or zinc oxide aluminum AZO etc.
4. thin-film transistor as claimed in claim 1, is characterized in that, the material of described gate dielectric layer adopts the insulating material of silicon dioxide or silicon nitride etc.
5. thin-film transistor as claimed in claim 1, is characterized in that, described source electrode and the very transparent electric conducting material of tin indium oxide ITO or zinc oxide aluminum AZO etc. that leaks electricity.
6. a preparation method for thin-film transistor, is characterized in that, described preparation method comprises the following steps:
1) at the conductive film of the Grown layer of transparent of glass or plastics, chemical wet etching forms gate electrode;
2) and then the grow gate dielectric material of one deck insulation, chemical wet etching forms gate dielectric layer;
3) one deck of growing on gate dielectric layer is mixed the zinc oxide semiconductor material of aluminium, and passes into appropriate oxygen, and chemical wet etching forms channel layer;
4) growth layer of conductive film, chemical wet etching forms source electrode and drain electrode;
5) growth one deck passivation dielectric layer, photoetching and etching form the fairlead of gate electrode, source electrode and drain electrode;
6) growth layer of metal film, photoetching and etching form metal electrode and interconnection.
7. preparation method as claimed in claim 6, is characterized in that, in step 1), forms the transparent electric conducting material that conductive film that described gate electrode grows adopts tin indium oxide ITO or zinc oxide aluminum AZO etc.
8. preparation method as claimed in claim 6, is characterized in that, in step 2) in, the insulating material that gate dielectric material that described gate dielectric layer grows adopts silicon dioxide or silicon nitride etc. formed.
9. preparation method as claimed in claim 6, is characterized in that, in step 3), the zinc oxide semiconductor material that utilizes sputtering technology growth one deck to mix aluminium forms channel layer, and in sputter procedure, adds 3% ~ 20%(gas flow) oxygen; The target that sputter is used is the zinc-oxide ceramic target of mixing aluminium, and the content of aluminium is 1% ~ 10%(quality).
10. preparation method as claimed in claim 6, is characterized in that, in step 4), the conductive film that formation source electrode and drain electrode are grown adopts the transparent electric conducting material of tin indium oxide ITO or zinc oxide aluminum AZO etc.
CN201210202201.0A 2012-06-15 2012-06-15 Thin film transistor and preparation method thereof Pending CN103515445A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104766892A (en) * 2015-04-03 2015-07-08 北京大学 Calcium-doped zinc oxide thin film transistor and manufacturing method thereof
CN111129161A (en) * 2019-12-25 2020-05-08 华南理工大学 Flexible substrate semi-embedded grid thin film transistor and preparation method thereof
CN114078974A (en) * 2020-08-21 2022-02-22 天津大学 SiO growth by high temperature2Preparation method of silicon nano flexible thin film transistor of gate dielectric layer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281840A (en) * 1991-03-28 1994-01-25 Honeywell Inc. High mobility integrated drivers for active matrix displays
CN1470865A (en) * 2002-07-26 2004-01-28 瀚宇彩晶股份有限公司 Method for making x-ray detector display unit
CN1567077A (en) * 2003-06-16 2005-01-19 友达光电股份有限公司 Film transistor LCD and method for manufacturing same
US20100155718A1 (en) * 2008-12-24 2010-06-24 Sony Corporation Method of manufacturing thin film transistor, thin film transistor, and display unit
CN102332404A (en) * 2011-09-21 2012-01-25 华南理工大学 Method for manufacturing thin film transistor based on anodic oxidation insulating layer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5281840A (en) * 1991-03-28 1994-01-25 Honeywell Inc. High mobility integrated drivers for active matrix displays
CN1470865A (en) * 2002-07-26 2004-01-28 瀚宇彩晶股份有限公司 Method for making x-ray detector display unit
CN1567077A (en) * 2003-06-16 2005-01-19 友达光电股份有限公司 Film transistor LCD and method for manufacturing same
US20100155718A1 (en) * 2008-12-24 2010-06-24 Sony Corporation Method of manufacturing thin film transistor, thin film transistor, and display unit
CN102332404A (en) * 2011-09-21 2012-01-25 华南理工大学 Method for manufacturing thin film transistor based on anodic oxidation insulating layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104766892A (en) * 2015-04-03 2015-07-08 北京大学 Calcium-doped zinc oxide thin film transistor and manufacturing method thereof
CN111129161A (en) * 2019-12-25 2020-05-08 华南理工大学 Flexible substrate semi-embedded grid thin film transistor and preparation method thereof
CN111129161B (en) * 2019-12-25 2021-10-26 华南理工大学 Flexible substrate semi-embedded grid thin film transistor and preparation method thereof
CN114078974A (en) * 2020-08-21 2022-02-22 天津大学 SiO growth by high temperature2Preparation method of silicon nano flexible thin film transistor of gate dielectric layer
CN114078974B (en) * 2020-08-21 2023-09-26 天津大学 SiO growth at high temperature 2 Preparation method of silicon nanometer flexible thin film transistor with gate dielectric layer

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