CN103526095A - Hard alloy matrix for synthesis of polycrystalline diamond compact - Google Patents
Hard alloy matrix for synthesis of polycrystalline diamond compact Download PDFInfo
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- CN103526095A CN103526095A CN201310530290.6A CN201310530290A CN103526095A CN 103526095 A CN103526095 A CN 103526095A CN 201310530290 A CN201310530290 A CN 201310530290A CN 103526095 A CN103526095 A CN 103526095A
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Abstract
The invention provides a hard alloy matrix for synthesis of a polycrystalline diamond compact. The face, combined with a diamond, of the hard alloy matrix is an arc face and protrusions are evenly distributed on the arc face. Due to the fact that the face, combined with the diamond, of the hard alloy matrix is the arc face and the protrusions are arranged on the arc face, on one hand, the arranged arc face increases the contact area of a diamond layer and the hard alloy matrix so that the residual stress on the unit contact face can be reduced and the transverse pressure gradient in the process of polycrystalline diamond compact synthesis can be reduced, and therefore residual heat stress distribution in the diamond compact is improved. The protrusions arranged on the arc face can solve the problem of concentration of tensile stress. Thus, according to the arrangement, the residual stress on the unit contact face can be reduced and the reduction of stress concentration can be achieved, so that the binding force of the hard alloy matrix and the diamond is improved, and therefore the quality of the polycrystalline diamond is further improved.
Description
Technical field
The present invention relates to the production technical field of polycrystalline diamond material, particularly a kind of hard alloy substrate of synthetic polycrystalline diamond compacts (PDCs).
Background technology
Polycrystalline diamond compacts (PDCs) is by hard alloy substrate and diadust a kind of advanced composite material for every field such as oil, Sweet natural gas probing or Tool in Cutting that sintering forms under High Temperature High Pressure.
But different with performance perameters such as adamantine thermal expansivity, Young's modulus due to Wimet, the polycrystalline diamond compacts (PDCs) inside sintering into is by nubbin stress.The surface that remaining stress distribution combines at Wimet and diamond, affect hard alloy substrate and adamantine bonding force, and the larger bonding force of unrelieved stress is less.Exist the toughness of polycrystalline diamond compacts (PDCs) of unrelieved stress poor, easily cause the improper destructions such as it bursts apart, layering, have a strong impact on the quality of polycrystalline diamond.
Therefore, how to improve Wimet and adamantine bonding force, to improve the toughness of polycrystalline diamond compacts (PDCs), and then the quality of raising polycrystalline diamond, be the problem that those skilled in the art need solution badly.
Summary of the invention
The hard alloy substrate that the object of this invention is to provide a kind of synthetic polycrystalline diamond compacts (PDCs), to improve the toughness of polycrystalline diamond compacts (PDCs), and then the quality of raising polycrystalline diamond.For solving the problems of the technologies described above, the invention provides following technical scheme:
A hard alloy substrate for synthetic polycrystalline diamond compacts (PDCs), wherein, is arc for the upper surface of being combined with diamond in described hard alloy substrate, and on described arc, is provided with equally distributed projection.
Preferably, above-mentioned hard closes in matrix, and described hard alloy substrate is right cylinder, and the upper surface of the described hard alloy substrate arc surface that is outwardly convex.
Preferably, above-mentioned hard closes in matrix, and described projection comprises:
Be arranged on the central protuberance of the upper surface center of described hard alloy substrate;
Some peripheral projection along the circumferential distribution of described hard alloy substrate.
Preferably, above-mentioned hard closes in matrix, described peripheral projection is three layers of circular distribution centered by described central protuberance, and the number of every layer of described peripheral projection distributes by being equal difference ascending series near the internal layer of described central protuberance to the skin away from described central protuberance.
Preferably, above-mentioned hard closes in matrix, and the described peripheral projection number of internal layer is 6, outer field described peripheral projection number is 18, the number of the described peripheral projection between skin and internal layer is 12.
Preferably, above-mentioned hard closes in matrix, and the angle of the line of peripheral projection central point is 30 ° described in the line of described central protuberance central point and the arbitrary described peripheral projection central point of internal layer and the described central protuberance central point middle level adjacent with described internal layer peripheral projection;
The angle of the line of the outer peripheral projection central point that the line of the arbitrary described peripheral projection central point of described central protuberance central point and middle level and described central protuberance central point are adjacent with described internal layer peripheral projection is 15 °.
Preferably, above-mentioned hard closes in matrix, and described central protuberance is hemispherical protuberances.
Preferably, above-mentioned hard closes in matrix, and described peripheral projection is that semisphere, truncated cone-shaped, taper shape, semielliptical shape or protrusion direction are towards the protruding hemispheric projection of described central protuberance.
Preferably, above-mentioned hard closes in matrix, and the radian of described upper surface is 5-30 °.
Preferably, above-mentioned hard closes in matrix, also comprises the groove at the center that is opened in described projection, and the cross section of described groove is identical with the cross-sectional shape of described projection.
The invention provides a kind of hard alloy substrate of synthetic polycrystalline diamond compacts (PDCs), wherein, in this hard alloy substrate, for the bonding surface of being combined with diamond, be arc, and on arc, be provided with equally distributed projection.In the application, by the bonding surface of being combined with diamond in hard alloy substrate, be set to arc, and projection is set on arc, the arc arranging has increased the contact area of diamond layer and hard alloy substrate on the one hand, to reduce the unrelieved stress on unit contact surface, also reduced the transverse-pressure gradient in synthetic polycrystalline diamond compacts (PDCs) process, thereby improved the residual thermal stress in composite sheet, distributed.Projection on arc can reduce the concentrated problem of tensile stress.Therefore, by above-mentioned setting, not only can reduce the unrelieved stress size on unit contact surface, can also reduce the problem of stress concentration, thereby improve hard alloy substrate and adamantine bonding force, and then improve the quality of polycrystalline diamond.
Accompanying drawing explanation
The front view that Fig. 1 is the hard alloy substrate that provides in the embodiment of the present invention;
The vertical view that Fig. 2 is the first hard alloy substrate of providing in the embodiment of the present invention;
The vertical view that Fig. 3 is the second hard alloy substrate of providing in the embodiment of the present invention;
The vertical view that Fig. 4 is the third hard alloy substrate of providing in the embodiment of the present invention;
The vertical view that Fig. 5 is the 4th kind of hard alloy substrate providing in the embodiment of the present invention;
The front view of establishing reeded hard alloy substrate of Fig. 6 for providing in the embodiment of the present invention;
Fig. 7 is the vertical view of Fig. 6.
Embodiment
Core of the present invention is to provide a kind of hard alloy substrate of synthetic polycrystalline diamond compacts (PDCs), to improve the toughness of polycrystalline diamond compacts (PDCs), and then the quality of raising polycrystalline diamond.
In order to make those skilled in the art person understand better the present invention program, below in conjunction with drawings and embodiments, the present invention is described in further detail.
Please refer to shown in Fig. 1-5, the embodiment of the invention discloses a kind of hard alloy substrate of synthetic polycrystalline diamond compacts (PDCs).Wherein, in this hard alloy substrate 1, for the bonding surface 2 of being combined with diamond, be arc, and on arc, be provided with equally distributed projection.In the application by the bonding surface of being combined with diamond in hard alloy substrate 12 is set to arc, and projection is set on arc, the arc arranging has increased the contact area of diamond layer and hard alloy substrate 1 on the one hand, to reduce the unrelieved stress on unit contact surface, also reduced the transverse-pressure gradient in synthetic polycrystalline diamond compacts (PDCs) process, thereby improved the residual thermal stress in composite sheet, distributed.And projection on arc can reduce to occur the concentrated problem of tensile stress.Therefore, by above-mentioned setting, not only can reduce the unrelieved stress size on unit contact surface, can also reduce the problem of stress concentration, thereby improve hard alloy substrate 1 and adamantine bonding force, and then improve the quality of polycrystalline diamond.
Particularly, the hard alloy substrate that provides in the application 1 is right cylinder, and the bonding surface 2 of hard alloy substrate 1 arc surface that is outwardly convex.Can be convenient to it and be combined with diamond the bonding surface of hard alloy substrate 12 is outwards outstanding, be set to the power that arc surface can guarantee that various piece is subject to identical, reduce the problem of stress concentration.It will be appreciated by persons skilled in the art that in practice and also can be set to the arc surface to lower recess in connection with face 2.
Projection in the application on disclosed hard alloy substrate 1 comprises: the central protuberance 31 that is arranged on bonding surface 2 centers of hard alloy substrate 1; Some peripheral projection 32 along the circumferential arrangement of hard alloy substrate 1.By by projection along circumferential arrangement can by stress distribution week of hard alloy substrate 1 upwards.
Further in embodiment, this peripheral projection 32 is three layers of circular distribution centered by central protuberance 31, and the number of peripheral projection 32 is equal difference ascending series by the internal layer near central protuberance 31 to the skin away from central protuberance 31 and distributes, and is about to peripheral projection 31 and is divided into internal layer, middle level and skin.By above-mentioned setting with guarantee every layer peripheral projection 31 minutes stress identical, be about to stress equilibrium and distribute, thereby avoid occurring the problem of stress concentration.
In the application, according to actual computation, draw the concrete numerical value that one group of peripheral projection 31 distributes, the number of the peripheral projection 31 of internal layer is 6, outer field peripheral projection 31 numbers are 18 and the number of the peripheral projection 31 in middle level is 12.Only be to provide a kind of concrete number herein and distributed, technician can arrange according to the size of the size of hard alloy substrate 1 and stress in practice, and in setting up procedure with reference to the size of peripheral projection 31.
Further, angle between the line of middle level peripheral projection 32 central points that the line of the central point of the arbitrary peripheral projection 32 of the central point of central protuberance 31 and internal layer is adjacent with internal layer peripheral projection 32 with central protuberance 31 central points is set to 30 °, and internal layer peripheral projection 32 is 30 ° with the angle of middle level peripheral projection.By being set, the number of angle and distribution can determine the position of the peripheral projection 32 in middle level.
Simultaneously, by the angle of the line of the line of arbitrary peripheral projection 32 central points of central protuberance 31 central points and the middle level outer peripheral projection central point adjacent with internal layer peripheral projection 32 with central protuberance 31 central points, be 15 °, the angle that is about to middle level peripheral projection and outer peripheral projection is 15 °.By being set, the number of angle and distribution can determine the position of the peripheral projection 32 in skin.
In specific embodiment, central protuberance 31 is set to hemispherical protuberances.Due to the mid point that bonding surface 2 centers of hard alloy substrate 1 are whole surface, in order to guarantee that stress distribution is even herein, optimum mode is set to semisphere by central protuberance 31, to avoid the problem with the structure generation stress concentration of seamed edge.
The peripheral projection 32 providing in the application specifically comprises the projection of semisphere, truncated cone-shaped, taper shape or semielliptical shape, this peripheral projection 32 also can be protrusion direction towards the protruding hemispheric projection of central protuberance 31 in another embodiment, the cross section of this peripheral projection 32 is convexity, and the protrusion direction of convexity is towards central protuberance 31.
Particularly, when peripheral projection 32 is semielliptical shape projection, the major diameter of semielliptical shape projection is parallel to bonding surface 2 radial directions of hard alloy substrate 1, and minor axis that in another embodiment also can semielliptical shape projection is set to be parallel to bonding surface 2 radial directions of hard alloy substrate 1.Known by above-mentioned analysis, in practice as long as peripheral projection 32 is set to symmetrical structure, and the symmetry axis of symmetrical peripheral projection 32 is set to be parallel to bonding surface 2 radiuses of hard alloy substrate 1, to guarantee peripheral projection 32 stress equalizations.
Preferably, the radian of the bonding surface 2 of hard alloy substrate 1 is set to 5-30 °, and those skilled in the art can select different angles according to the size of the size of hard alloy substrate 1 and stress in practice, and the size of the larger radian of area needing is larger.
Please refer to shown in Fig. 6 and Fig. 7, on the basis of technique scheme, this hard alloy substrate 1 also comprises the groove 4 that is opened in protruding center, and the cross section of groove 4 is identical with protruding cross-sectional shape.By offer groove 4 in projection, further increase hard alloy substrate 1 and adamantine contact area, thereby further improved stressed area, improved hard alloy substrate 1 and adamantine bonding force, improved the quality of polycrystalline diamond.
In this specification sheets, each embodiment adopts the mode of going forward one by one to describe, and each embodiment stresses is the difference with other embodiment, between each embodiment identical similar part mutually referring to.
Above-mentioned explanation to the disclosed embodiments, makes professional and technical personnel in the field can realize or use the present invention.To the multiple modification of these embodiment, will be apparent for those skilled in the art, General Principle as defined herein can, in the situation that not departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. a hard alloy substrate for synthetic polycrystalline diamond compacts (PDCs), is characterized in that, is arc, and on described arc, is provided with equally distributed projection in described hard alloy substrate (1) for the bonding surface (2) of being combined with diamond.
2. hard according to claim 1 closes matrix, it is characterized in that, described hard alloy substrate (1) is right cylinder, and the bonding surface (2) of described hard alloy substrate (1) arc surface that is outwardly convex.
3. hard alloy substrate according to claim 2, is characterized in that, described projection comprises:
Be arranged on the central protuberance (31) of bonding surface (2) center of described hard alloy substrate (1);
Some peripheral projection (32) along the circumferential distribution of described hard alloy substrate (1).
4. hard alloy substrate according to claim 3, it is characterized in that, described peripheral projection (32) is three layers of circular distribution centered by described central protuberance (31), and the number of every layer of described peripheral projection (32) is the distribution of equal difference ascending series by the internal layer near described central protuberance (31) to the skin away from described central protuberance (31).
5. hard alloy substrate according to claim 4, is characterized in that, described peripheral projection (32) number of internal layer is 6, outer field described peripheral projection (32) number is 18, the number of the described peripheral projection (32) between skin and internal layer is 12.
6. hard alloy substrate according to claim 4, it is characterized in that, the angle of the line of peripheral projection (32) central point is 30 ° described in the line of the arbitrary described peripheral projection of described central protuberance (31) central point and internal layer (32) central point and described central protuberance (31) the central point middle level adjacent with described internal layer peripheral projection (32);
The angle of the line of outer peripheral projection (32) central point that the line of the arbitrary described peripheral projection in described central protuberance (31) central point and middle level (32) central point and described central protuberance (31) central point are adjacent with described internal layer peripheral projection (32) is 15 °.
7. hard alloy substrate according to claim 3, is characterized in that, described central protuberance (31) is hemispherical protuberances.
8. hard alloy substrate according to claim 3, is characterized in that, described peripheral projection (32) is that semisphere, truncated cone-shaped, taper shape, semielliptical shape or protrusion direction are towards the protruding hemispheric projection of described central protuberance (31).
9. according to the hard alloy substrate described in claim 1-8 any one, it is characterized in that, the radian of described bonding surface (2) is 5-30 °.
10. hard alloy substrate according to claim 9, is characterized in that, also comprise the groove (4) at the center that is opened in described projection, and the cross section of described groove (4) is identical with the cross-sectional shape of described projection.
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| CN201310530290.6A CN103526095A (en) | 2013-10-30 | 2013-10-30 | Hard alloy matrix for synthesis of polycrystalline diamond compact |
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| CN201310530290.6A CN103526095A (en) | 2013-10-30 | 2013-10-30 | Hard alloy matrix for synthesis of polycrystalline diamond compact |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104863513A (en) * | 2015-04-29 | 2015-08-26 | 富耐克超硬材料股份有限公司 | Polycrystalline diamond compact and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5030276A (en) * | 1986-10-20 | 1991-07-09 | Norton Company | Low pressure bonding of PCD bodies and method |
| CN2726791Y (en) * | 2004-09-15 | 2005-09-21 | 金瑞新材料科技股份有限公司 | Diamond composite sheet |
| CN201246108Y (en) * | 2008-05-16 | 2009-05-27 | 株洲硬质合金集团有限公司 | Ball teeth-shaped diamond composite sheet substrate |
| CN101658937A (en) * | 2009-09-14 | 2010-03-03 | 河南晶锐超硬材料有限公司 | Polycrystalline diamond composite sheet matrix |
| CN201521249U (en) * | 2009-09-14 | 2010-07-07 | 河南晶锐超硬材料有限公司 | Polycrystalline diamond compact matrix |
| CN202480460U (en) * | 2012-03-29 | 2012-10-10 | 成都比拓超硬材料有限公司 | Substrate capable of enhancing structure of polycrystalline diamond compact |
-
2013
- 2013-10-30 CN CN201310530290.6A patent/CN103526095A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5030276A (en) * | 1986-10-20 | 1991-07-09 | Norton Company | Low pressure bonding of PCD bodies and method |
| CN2726791Y (en) * | 2004-09-15 | 2005-09-21 | 金瑞新材料科技股份有限公司 | Diamond composite sheet |
| CN201246108Y (en) * | 2008-05-16 | 2009-05-27 | 株洲硬质合金集团有限公司 | Ball teeth-shaped diamond composite sheet substrate |
| CN101658937A (en) * | 2009-09-14 | 2010-03-03 | 河南晶锐超硬材料有限公司 | Polycrystalline diamond composite sheet matrix |
| CN201521249U (en) * | 2009-09-14 | 2010-07-07 | 河南晶锐超硬材料有限公司 | Polycrystalline diamond compact matrix |
| CN202480460U (en) * | 2012-03-29 | 2012-10-10 | 成都比拓超硬材料有限公司 | Substrate capable of enhancing structure of polycrystalline diamond compact |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104863513A (en) * | 2015-04-29 | 2015-08-26 | 富耐克超硬材料股份有限公司 | Polycrystalline diamond compact and preparation method thereof |
| CN104863513B (en) * | 2015-04-29 | 2017-05-17 | 富耐克超硬材料股份有限公司 | Polycrystalline diamond compact and preparation method thereof |
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Application publication date: 20140122 |