CN103528575A - Three-dimensional AMRMEMS (Anisotropic Magneto Resistive Micro-Electro-Mechanical System) three-axis magnetometer structure and magnetometer - Google Patents
Three-dimensional AMRMEMS (Anisotropic Magneto Resistive Micro-Electro-Mechanical System) three-axis magnetometer structure and magnetometer Download PDFInfo
- Publication number
- CN103528575A CN103528575A CN201310492897.XA CN201310492897A CN103528575A CN 103528575 A CN103528575 A CN 103528575A CN 201310492897 A CN201310492897 A CN 201310492897A CN 103528575 A CN103528575 A CN 103528575A
- Authority
- CN
- China
- Prior art keywords
- dimensional
- amrmems
- axis
- anisotropic magneto
- tri
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C17/00—Compasses; Devices for ascertaining true or magnetic north for navigation or surveying purposes
- G01C17/02—Magnetic compasses
- G01C17/28—Electromagnetic compasses
- G01C17/32—Electron compasses
Abstract
The invention provides an AMRMEMS (Anisotropic Magneto Resistive Micro-Electro-Mechanical System) three-axis magnetometer structure and a magnetometer which are manufactured based on NiFe AMR characteristics. The three-axis magnetometer structure comprises anisotropic magneto resistive materials arranged on a predetermined plane, an oxide groove and anisotropic magneto resistive materials arranged on the two side walls, parallel to the length directions of electrode components, of the oxide groove, wherein the anisotropic magneto resistive materials arranged on the predetermined plane are used for forming the X axis and the Y axis of the three-axis magnetometer structure, then the electrode components are formed on the magneto resistive materials, are used as barber electrodes and are used for changing the direction of electric currents, so that the anisotropic magneto resistive effect of the AMR materials is utilized; the side walls of the oxide groove are perpendicular to the predetermined plane; and the magneto resistive materials arranged on the two side walls of the oxide groove are used for forming the Z axis of the three-axis magnetometer structure.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of three-dimensional AMRMEMS tri-axle magnetometer structures of making based on NiFeAMR characteristic and the three-dimensional AMRMEMS tri-axle magnetometers that comprise this three axles magnetometer structure.
Background technology
MEMS (micro electro mechanical system) (MEMS, Micro-Electro-Mechanical Systems) is a kind of industrial technology that microelectric technique and mechanical engineering are fused together, and its opereating specification is in micrometer range.
Nowadays, utilize the MEMS (micro electro mechanical system) (AMR MEMS) of anisotropic magnetoresistive (AMR, anisotropic magneto resistive) the effect manufacture of FeNi to have highly sensitive, Heat stability is good, the cost of material is low, and preparation technology is simple, is widely used.
Three-dimensional AMR MEMS tri-axle magnetometers are exactly the MEMS device of the anisotropic magneto-resistive effect manufacture of a kind of FeNi of utilization.Magnetometer, also referred to as electronic compass, refers to various for utilizing the instrument of the Lai Ding arctic, terrestrial magnetic field.
In the processing procedure of three axles (X-axis, Y-axis, Z axis) magnetometer, X-axis and Y-axis are to do in the plane, and Z axis need to be vertical with the plane of X-axis and Y-axis formation, thus to form a groove side vertical with plane, to form Z axis.
Fig. 1 schematically shows the three-dimensional AMRMEMS tri-axle magnetometer structures according to prior art.
As shown in Figure 1, according to the three-dimensional AMRMEMS tri-axle magnetometer structures of prior art, comprise:
Be arranged in the anisotropic magnetoresistance material on predetermined plane, to form X and the Y-axis of three axle magnetometer structures, then on magnetoresistance material, form electrod assembly (as barber electrode), be used for changing direction of current, to utilize the anisotropic magnetoresistance of AMR material;
Be arranged in the anisotropic magneto-resistive material 40 on a sidewall of described oxide channel, anisotropic magneto-resistive material 40 forms the Z axis of three axle magnetometer structures.
But, as shown in Figure 1, general only in a side formation anisotropic magneto-resistive material 40 of oxide channel according to the three-dimensional AMRMEMS tri-axle magnetometer structures of prior art, can not effectively utilize thus the trenched side-wall of oxide formation, thereby device area is larger.
Summary of the invention
Technical matters to be solved by this invention is for there being above-mentioned defect in prior art, provides a kind of and can effectively utilize device space, thereby reduce chip size, increases the three-dimensional AMR MEMS tri-axle magnetometer structures of device density.
In order to realize above-mentioned technical purpose, according to a first aspect of the invention, a kind of three-dimensional AMR MEMS tri-axle magnetometer structures of making based on NiFe AMR characteristic are provided, comprise: be arranged in the NiFe anisotropic magnetoresistance material of predetermined plane, described anisotropic magneto-resistive material rete forms X-axis and the Y-axis of three axle magnetometer structures; On magnetoresistance material, form electrode as barber electrode; Oxide channel, the sidewall of described oxide channel is vertical with described predetermined plane; Be arranged in the anisotropic magneto-resistive material on two sidewalls parallel with length direction electrod assembly described oxide channel, described anisotropic magneto-resistive material forms the Z axis of three axle magnetometer structures.
Preferably, one end of the described electrod assembly between adjacent described oxide channel is connected, and also can need design according to side circuit.
Preferably, the material of described electrod assembly is aluminium.
Preferably, described anisotropic magneto-resistive material rete and Z axis anisotropic magneto-resistive material have same material.
Preferably, described anisotropic magneto-resistive material rete is FeNi rete.
Preferably, Z axis anisotropic magneto-resistive material is FeNi.
Preferably, described electrod assembly is Barber electrode.
According to a second aspect of the invention, providing a kind of has according to the magnetometer of the three-dimensional AMR MEMS tri-axle magnetometer structures described in first aspect present invention.
Thus, in three-dimensional AMR MEMS tri-axle magnetometer structures according to the present invention, owing to arranging Z axis anisotropic magneto-resistive material on two sidewalls parallel with length direction electrod assembly described oxide channel, can effectively utilize device space, thereby reduction chip size, increases device density.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily to the present invention, there is more complete understanding and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the three-dimensional AMRMEMS tri-axle magnetometer structures according to prior art.
Fig. 2 schematically shows three-dimensional according to the preferred embodiment of the invention AMRMEMS tri-axle magnetometer structures.
Fig. 3 schematically shows electrode principle of work.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 2 schematically shows three-dimensional according to the preferred embodiment of the invention AMR MEMS tri-axle magnetometer structures.
As shown in Figure 2, three-dimensional according to the preferred embodiment of the invention AMRMEMS tri-axle magnetometer structures comprise:
The NiFe anisotropic magnetoresistance material that is arranged in predetermined plane, described anisotropic magneto-resistive material rete forms X-axis and the Y-axis of three axle magnetometer structures; Then on magnetoresistance material, form electrod assembly (as barber electrode), be used for changing direction of current, to utilize the anisotropic magnetoresistance of AMR material;
Be arranged in the anisotropic magneto-resistive material 40 on two parallel sidewalls of the length direction with electrod assembly 20 of described oxide channel, this anisotropic magneto-resistive material 40 forms the Z axis of three axle magnetometer structures.
Preferably, one end of the described electrod assembly 20 between adjacent described oxide channel 30 is connected.Also can need design according to side circuit.
Preferably, the material of described electrod assembly 20 is aluminium.
Preferably, described anisotropic magneto-resistive material rete 10 and anisotropic magneto-resistive material 40 have same material.
Preferably, described anisotropic magneto-resistive material rete 10 is FeNi retes.
Preferably, anisotropic magneto-resistive material 40 is FeNi.
Preferably, electrod assembly 20 is Barber electrodes.As shown in Figure 3, conventionally, the easy axis shape of the direction of barber electrode and magnetoresistance material in angle of 45 degrees, when electric current during by electrode can with the direction of magnetic resistance easy magnetizing axis in angle of 45 degrees.Thus, there is shown as seen the sample situation of 40 one-tenth 45 jiaos of anisotropic magneto-resistive material.
Thus, in three-dimensional according to the preferred embodiment of the invention AMRMEMS tri-axle magnetometer structures, owing to arranging anisotropic magneto-resistive material 40 on parallel two sidewalls of the length direction with electrod assembly 20 at described oxide channel, can effectively utilize device space, thereby reduction chip size, increases device density.
According to another preferred embodiment of the invention, the present invention also provides a kind of three-dimensional AMR MEMS tri-axle magnetometers that adopt three-dimensional according to the preferred embodiment of the invention AMR MEMS tri-axle magnetometer structures as shown in Figure 2.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as the term in instructions " first ", " second ", " the 3rd " are only for distinguishing each assembly, element, step of instructions etc., rather than for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (8)
1. three-dimensional AMRMEMS tri-axle magnetometer structures, is characterized in that comprising:
The NiFe anisotropic magnetoresistance material that is arranged in predetermined plane, described anisotropic magneto-resistive material rete forms X-axis and the Y-axis of three axle magnetometer structures; On magnetoresistance material, form electrode as barber electrode;
Oxide channel, the sidewall of described oxide channel is vertical with described predetermined plane;
Be arranged in the anisotropic magneto-resistive material on two sidewalls parallel with length direction electrod assembly described oxide channel, described anisotropic magneto-resistive material forms the Z axis of three axle magnetometer structures.
2. three-dimensional AMRMEMS tri-axle magnetometer structures according to claim 1, is characterized in that, one end of the described electrod assembly between adjacent described oxide channel is connected, and also can need design according to side circuit.
3. three-dimensional AMRMEMS tri-axle magnetometer structures according to claim 1 and 2, is characterized in that, the material of described electrod assembly is aluminium.
4. three-dimensional AMRMEMS tri-axle magnetometer structures according to claim 1 and 2, is characterized in that, described anisotropic magneto-resistive material rete and anisotropic magneto-resistive material have same material.
5. three-dimensional AMRMEMS tri-axle magnetometer structures according to claim 1 and 2, is characterized in that, described anisotropic magneto-resistive material rete is FeNi rete.
6. three-dimensional AMRMEMS tri-axle magnetometer structures according to claim 1 and 2, is characterized in that, described anisotropic magneto-resistive material is FeNi.
7. three-dimensional AMRMEMS tri-axle magnetometer structures according to claim 1 and 2, is characterized in that, described electrod assembly is Barber electrode.
8. three-dimensional AMRMEMS tri-axle magnetometers with three-dimensional AMRMEMS tri-axle magnetometer structures according to claim 1 and 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310492897.XA CN103528575B (en) | 2013-10-18 | 2013-10-18 | Three-dimensional AMRMEMS three axle magnetometers structure and magnetometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310492897.XA CN103528575B (en) | 2013-10-18 | 2013-10-18 | Three-dimensional AMRMEMS three axle magnetometers structure and magnetometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103528575A true CN103528575A (en) | 2014-01-22 |
| CN103528575B CN103528575B (en) | 2017-07-11 |
Family
ID=49930777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310492897.XA Active CN103528575B (en) | 2013-10-18 | 2013-10-18 | Three-dimensional AMRMEMS three axle magnetometers structure and magnetometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103528575B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104176698A (en) * | 2014-08-27 | 2014-12-03 | 上海华虹宏力半导体制造有限公司 | Integrated MEMS (micro-electromechanical systems) device and manufacturing method thereof |
| CN104485415A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetic resistance structure |
| CN104900801A (en) * | 2015-04-23 | 2015-09-09 | 美新半导体（无锡）有限公司 | Anti-ferromagnetic pinning AMR (Anisotropic Magneto Resistance) sensor |
| CN105070825A (en) * | 2015-08-11 | 2015-11-18 | 上海华虹宏力半导体制造有限公司 | 3-axis anisotropic magnetoresistor with Z-axis sensitivity and stability being balanced and preparation method thereof |
| CN105527589A (en) * | 2014-09-29 | 2016-04-27 | 硕英股份有限公司 | Magnetometer |
| CN109752677A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of double bridge formula thin-film magnetoresistive sensor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080052932A1 (en) * | 2006-09-01 | 2008-03-06 | Song Sheng Xue | Magnetic MEMS sensors |
| CN101142494A (en) * | 2005-03-17 | 2008-03-12 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| CN102116851A (en) * | 2009-12-10 | 2011-07-06 | 意法半导体股份有限公司 | Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology |
| CN103261905A (en) * | 2010-12-23 | 2013-08-21 | 意法半导体股份有限公司 | Integrated magnetoresistive sensor, in particular three-axes magnetoresistive sensor and manufacturing method thereof |
-
2013
- 2013-10-18 CN CN201310492897.XA patent/CN103528575B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101142494A (en) * | 2005-03-17 | 2008-03-12 | 雅马哈株式会社 | Magnetic sensor and manufacturing method thereof |
| US20080052932A1 (en) * | 2006-09-01 | 2008-03-06 | Song Sheng Xue | Magnetic MEMS sensors |
| CN102116851A (en) * | 2009-12-10 | 2011-07-06 | 意法半导体股份有限公司 | Integrated triaxial magnetometer of semiconductor material manufactured in MEMS technology |
| CN103261905A (en) * | 2010-12-23 | 2013-08-21 | 意法半导体股份有限公司 | Integrated magnetoresistive sensor, in particular three-axes magnetoresistive sensor and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 陈雁等: "各向异性磁电阻传感器Barber电极的优化设计", 《传感器与微系统》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104176698A (en) * | 2014-08-27 | 2014-12-03 | 上海华虹宏力半导体制造有限公司 | Integrated MEMS (micro-electromechanical systems) device and manufacturing method thereof |
| CN104176698B (en) * | 2014-08-27 | 2016-02-03 | 上海华虹宏力半导体制造有限公司 | Integrated MEMS device and preparation method thereof |
| CN105527589A (en) * | 2014-09-29 | 2016-04-27 | 硕英股份有限公司 | Magnetometer |
| CN105527589B (en) * | 2014-09-29 | 2019-02-19 | 硕英股份有限公司 | Magnetometer |
| CN104485415A (en) * | 2014-12-25 | 2015-04-01 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetic resistance structure |
| CN104485415B (en) * | 2014-12-25 | 2018-03-06 | 上海华虹宏力半导体制造有限公司 | Anisotropic magnetoresistive structure |
| CN104900801A (en) * | 2015-04-23 | 2015-09-09 | 美新半导体（无锡）有限公司 | Anti-ferromagnetic pinning AMR (Anisotropic Magneto Resistance) sensor |
| CN105070825A (en) * | 2015-08-11 | 2015-11-18 | 上海华虹宏力半导体制造有限公司 | 3-axis anisotropic magnetoresistor with Z-axis sensitivity and stability being balanced and preparation method thereof |
| CN105070825B (en) * | 2015-08-11 | 2017-10-27 | 上海华虹宏力半导体制造有限公司 | Balance 3 axle anisotropic magnetoresistives of Z axis sensitivity and stability and preparation method thereof |
| CN109752677A (en) * | 2019-01-10 | 2019-05-14 | 东南大学 | A kind of double bridge formula thin-film magnetoresistive sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103528575B (en) | 2017-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103528575A (en) | Three-dimensional AMRMEMS (Anisotropic Magneto Resistive Micro-Electro-Mechanical System) three-axis magnetometer structure and magnetometer | |
| US9915685B2 (en) | Electrical current detection system | |
| CN103033772B (en) | Magnetoresistive sensing component and magnetoresistive sensor | |
| US9182458B2 (en) | Magnetoresistive sensing device | |
| CN106597326B (en) | Magnetic field sensing device | |
| EP3199965B1 (en) | Magnetic sensor | |
| CN104756272B (en) | Inductor structure with pre-defined current return | |
| CN103185828A (en) | Current sensor | |
| US11237229B2 (en) | Magnetic field sensing apparatus | |
| JP5174911B2 (en) | Magnetic sensor and magnetic sensor module | |
| US10877107B2 (en) | Magnetic field sensing device and magnetic field sensing apparatus | |
| CN104280699A (en) | Single-Chip Three-Axis Magnetic Field Sensing Device | |
| JP2015203647A (en) | magnetic sensor | |
| JP2009175120A (en) | Magnetic sensor and magnetic sensor module | |
| JP2011007673A (en) | Geomagnetic sensor | |
| WO2009151024A1 (en) | Magnetic sensor and magnetic sensor module | |
| CN104813478A (en) | Spin valve element | |
| US20170115363A1 (en) | Magnetic Field Sensor With Three-Dimensional Spiral Reset Coil | |
| WO2011074488A1 (en) | Magnetic sensor | |
| US10830838B2 (en) | Magnetic sensor | |
| CN102901858B (en) | A kind of current sensor | |
| JPWO2009084435A1 (en) | Magnetic sensor and magnetic sensor module | |
| CN104155620A (en) | Magnetic sensing device and sensing method and preparation technology thereof | |
| JP6699638B2 (en) | Magnetic sensor | |
| JP2016206006A (en) | Magnetic sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140626 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140626 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |