CN103545715A - Method for manufacturing laser array and combiner monolithic integration chip - Google Patents
Method for manufacturing laser array and combiner monolithic integration chip Download PDFInfo
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- CN103545715A CN103545715A CN201310503604.3A CN201310503604A CN103545715A CN 103545715 A CN103545715 A CN 103545715A CN 201310503604 A CN201310503604 A CN 201310503604A CN 103545715 A CN103545715 A CN 103545715A
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Abstract
A method for manufacturing a laser array and combiner monolithic integration chip comprises the steps that an n-type InP buffer layer, an n-type AlGaInAs covering layer, an AlGaInAs multi-quantum well layer, a p-type AlGaInAs covering layer, an InP interlayer, an InGaAsP grating layer and an InP sacrificial layer are grown on an n-type InP substrate in sequence to form a substrate, an active region is arranged on one side of the base chip, and a combiner region is arranged on the other side of the substrate; P ions are injected into the InP sacrificial layer of the combiner region, and fast thermal annealing is carried out; the InP sacrificial layer is removed, and gratings are manufactured in the InGaAsP grating layer of the active region; a p-type InP covering layer and a p-type InGaAs contact layer are grown on the InGaAsP grating layer of the active region and the InGaAsP grating layer of the combiner region; the p-type InGaAs contact layer, the p-type InP covering layer, the InGaAsP grating layer and the InP interlayer are removed through dry etching, ridge type waveguides of all laser units are formed in the active region, and combiner ridge type waveguides are formed in the combiner region; p electrodes are manufactured on the ridge type waveguides of the active region; the n-type InP substrate is thinned, an n electrode is manufactured on the back face of the n-type InP substrate, and manufacturing is completed.
Description
Technical field
The present invention relates to field of optoelectronic devices, particularly the manufacture method of a kind of laser array and wave multiplexer monolithic integrated chip.
Background technology
The multiple-wavelength laser of monolithic integrating passive optical multiplexer is the core devices of modern wavelength division multiplexing (WDM) optical communication system, and it has compact conformation, and optics and electricity junction loss are little, stability and high reliability.This monolithic integrated device comprises laser array and two parts of wave multiplexer, and the light that each laser sends closes ripple through wave multiplexer and exported by single waveguide.The making of laser array requires to realize each laser and has different emission wavelengths, and the making of wave multiplexer requires light can low-lossly to transmit therein, and the emission wavelength of wave multiplexer material is generally much smaller than the emission wavelength of laser for this reason.Because this kind of device comprises various structures to realize different functions, its making is also more complicated.Wherein, laser and optical multiplexer are different to the requirement of waveguiding structure.Laser waveguide General Requirements has shallow ridge waveguide structure, with the non-radiative compound device performance degradation being caused of avoiding being caused by the quantum well exposing.And in order to reduce the diffraction loss of light in wave multiplexer waveguide and to reduce wave multiplexer size, the etching of wave multiplexer waveguide at least will be goed deep into certain thickness waveguide core material conventionally, so that enough light restriction factors to be provided.This need to carry out the etching of laser and two partial waveguides of wave multiplexer step by step, has increased the complexity of element manufacturing, has reduced element manufacturing rate of finished products.
Summary of the invention
Main purpose of the present invention is to provide the manufacture method of a kind of laser array and wave multiplexer monolithic integrated chip, to simplify the manufacture craft of passive wave multiplexer and laser array monolithic integrated device.
The manufacture method that the invention provides a kind of laser array and wave multiplexer monolithic integrated chip, comprises the steps:
Step 1: growing n-type InP resilient coating successively on N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer and InP sacrifice layer, form substrate, a side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: inject P ion rapid thermal annealing in the InP in wave multiplexer district sacrifice layer;
Step 3: remove InP sacrifice layer, make grating in the InGaAsP of active area grating layer;
Step 4: growing p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that in active area, form each laser element form wave multiplexer ridge waveguide;
Step 6: make p electrode on the ridge waveguide of active area;
Step 7: attenuate N-shaped InP substrate, and make n electrode at its back side, complete preparation.
The present invention also provides the manufacture method of a kind of laser array and wave multiplexer monolithic integrated chip, comprises the steps:
Step 1: growing n-type InP resilient coating successively on N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer, form substrate, a side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: make grating in the InGaAsP of active area grating layer;
Step 3: growing p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 4: at wave multiplexer district sputter SiO
2and rapid thermal annealing;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that in active area, form each laser element form wave multiplexer ridge waveguide;
Step 6: make p electrode on the ridge waveguide of active area;
Step 7: attenuate N-shaped InP substrate, and make n electrode at its back side, complete preparation.
From technique scheme, can find out, the present invention has following beneficial effect:
Grating layer material in ridge waveguide etching process outside ridge waveguide is removed, and makes light in wave multiplexer waveguide, have enough restriction factors, is conducive to reduce optical diffraction loss and reduces wave multiplexer size.For laser, because grating layer is on quantum well layer, its etching is not affected to laser performance.Utilize p-type AlGaInAs covering as etching stop layer, during dry etching ridge waveguide, etching stops and this layer automatically, forms laser and wave multiplexer ridge waveguide simultaneously, has simplified device making technics.
Accompanying drawing explanation
For further illustrating content of the present invention, below in conjunction with embodiment and accompanying drawing, the present invention is described further, wherein:
Fig. 1 is that the laser array chip of the first embodiment of the present invention is made flow chart;
Fig. 2 is that the laser array chip of the second embodiment of the present invention is made flow chart;
Fig. 3-Fig. 8 is the structural representation of each making step of the present invention, and wherein Fig. 5, Fig. 7 difference corresponding diagram 4,6, is vertical view, and Fig. 8 is the ridge waveguide structure chart after completing.
Embodiment
Referring to Fig. 1, is the first embodiment of the present invention, in conjunction with consulting shown in Fig. 3 to Fig. 8, the invention provides the manufacture method of a kind of laser array and wave multiplexer monolithic integrated chip, comprises the steps:
Step 1: growing n-type InP resilient coating 2 successively on N-shaped InP substrate 1, N-shaped AlGaInAs covering 3, AlGaInAs multiple quantum well layer 4, p-type AlGaInAs covering 5, InP wall 6, InGaAsP grating layer 7, InP sacrifice layer 8, forms substrate, as Fig. 3, one side of this substrate is active area A, and opposite side is wave multiplexer district D, as Fig. 4.AlGaInAs multiple quantum well layer 4 comprises 2 above AlGaInAs quantum well and upper and lower two AlGaInAs graded-index layer.In device, can there is no InP wall 6 yet;
Step 2: inject P ion rapid thermal annealing in the InP sacrifice layer 8 of wave multiplexer district D; By P Implantation, in InP sacrifice layer 8, introduce a large amount of point defects, rapid thermal annealing makes point defect move to quantum well layer 4, promotes element counterdiffusion in quantum well and base, its emission wavelength is shortened, thereby light can low-loss transmission in wave multiplexer w waveguide.And in laser district A owing to there is no Implantation, quantum well radiation wavelength is constant.
Step 3: make grating 9 after removing InP sacrifice layer 8 in the grating layer 7 of active area A; The Zone Full that grating 9 is made in active area A as shown in Figure 4,5, or a part of region B of active area A, as shown in Figure 6,7.Emission wavelength λ=the 2neffA of laser, wherein neff is effective refractive index.By adopting the suitable grating cycle
the emission wavelength of Shi Tu6Zhong B district laser is greater than the emission wavelength of multiple quantum well layer 4, and M district becomes modulator region, utilizes quantum limit Stark effect can realize the luminous modulation of B district laser.For each laser, the cycle of grating 9 can be similar and different.When the grating cycle is identical, by changing the width of each laser ridge waveguide, realize different emission wavelengths.
Step 4: growing p-type InP covering 10 and p-type InGaAs contact layer 11 on the InGaAsP grating layer 7 of active area A and wave multiplexer district D;
Step 5: adopt dry etching to remove part p-type InGaAs contact layer 11, p-type InP covering 10, InGaAsP grating layer 7 and InP wall 6, at active area A, form the ridge waveguide a1 of each laser element, a2, a3, ，anJi wave multiplexer district D forms wave multiplexer ridge waveguide W (Fig. 8); Grating layer material 7 in ridge waveguide (Fig. 8) etching process outside ridge waveguide is removed, and makes light have enough restriction factors in wave multiplexer waveguide W, is conducive to reduce optical diffraction loss and reduces wave multiplexer size.For laser, because grating layer 7 is on quantum well layer 4, its etching is not affected to laser performance.Utilize p-type AlGaInAs covering 5 as etching stop layer, during dry etching ridge waveguide, etching stops and this layer automatically, forms laser and wave multiplexer ridge waveguide simultaneously, has simplified device making technics.The ridge waveguide a1 of active area A, a2, a3 ..., an has identical waveguiding structure as shown in Figure 8 with wave multiplexer waveguide W.A district laser array laser element number is n, n>=2.The wave multiplexer of optical multiplexer district D is multiple-mode interfence wave multiplexer or array waveguide grating wave multiplexer.
Step 6: at the ridge waveguide a1 of active area A, a2, a3 ..., the upper making of an p electrode 12.For the device that is manufactured with modulator M, need to first remove between laser district B and modulator region D isolated area C top contact layer material 11 Implantation and carry out electricity and isolate, as Fig. 6;
Step 7: attenuate substrate 1 is also made N electrode 13.
Referring again to Fig. 2, be the second embodiment of the present invention, in conjunction with consulting shown in Fig. 3-Fig. 8, the manufacture method of a kind of laser array of the present invention and wave multiplexer monolithic integrated chip, is characterized in that, comprises following making step:
Step 1: growing n-type InP resilient coating 2 successively on N-shaped InP substrate 1, N-shaped AlGaInAs covering 3, AlGaInAs multiple quantum well layer 4, p-type AlGaInAs covering 5, InP wall 6, InGaAsP grating layer 7, form substrate, as Fig. 3, a side of this substrate is active area A, opposite side is wave multiplexer district D, as Fig. 4.AlGaInAs multiple quantum well layer 4 comprises 2 above AlGaInAs quantum well and upper and lower two AlGaInAs graded-index layer.In device, can there is no InP wall 6 yet;
Step 2: make grating 9 in the grating layer 7 of active area A; The Zone Full that grating 9 is made in active area A as shown in Figure 4,5, or a part of region B of active area A, as shown in Figure 6,7.Emission wavelength λ=the 2neffA of laser, wherein neff is effective refractive index.By adopting the suitable grating cycle
the emission wavelength of Shi Tu6Zhong B district laser is greater than the emission wavelength of multiple quantum well layer 4, and M district becomes modulator region, utilizes quantum limit Stark effect can realize the luminous modulation of B district laser.For each laser, the cycle of grating 9 can be similar and different.When the grating cycle is identical, by changing the width of each laser ridge waveguide, realize different emission wavelengths.
Step 3: growing p-type InP covering 10 and p-type InGaAs contact layer 11 on the InGaAsP grating layer 7 of active area A and wave multiplexer district D;
Step 4: at device wave multiplexer district D sputter SiO
2and rapid thermal annealing; Utilize the SiO of sputter
2in the diffusion promotion quantum well of the point defect producing and base, the emission wavelength blue shift of multiple quantum well layer 4 in the counterdiffusion ，Shi D district of element, realizes light low-loss transmission in wave multiplexer waveguide W;
Step 5: adopt dry etching to remove part p-type InGaAs contact layer 11, p-type InP covering 10, InGaAsP grating layer 7 and InP wall 6, at active area A, form the ridge waveguide a1 of each laser element, a2, a3, ，anJi wave multiplexer district D forms wave multiplexer ridge waveguide W (Fig. 8); Grating layer material 7 in ridge waveguide (Fig. 8) etching process outside ridge waveguide is removed, and makes light have enough restriction factors in wave multiplexer waveguide W, is conducive to reduce optical diffraction loss and reduces wave multiplexer size.For laser, because grating layer 7 is on quantum well layer 4, its etching is not affected to laser performance.Utilize p-type AlGaInAs covering 5 as etching stop layer, during dry etching ridge waveguide, etching stops and this layer automatically, forms laser and wave multiplexer ridge waveguide simultaneously, has simplified device making technics.The ridge waveguide a1 of active area A, a2, a3 ..., an has identical waveguiding structure as shown in Figure 8 with wave multiplexer waveguide W.A district laser array laser element number is n, n>=2.The wave multiplexer of optical multiplexer district D is multiple-mode interfence wave multiplexer or array waveguide grating wave multiplexer.
Step 6: at the ridge waveguide a1 of active area A, a2, a3 ..., the upper making of an p electrode 12.For the device that is manufactured with modulator M, need to first remove between laser district B and modulator region D isolated area C top contact layer material 11 Implantation and carry out electricity and isolate, as Fig. 6;
Step 7: attenuate substrate 1 is also made N electrode 13.
Above-described system block diagram and implementing circuit figure; to object of the present invention; technical scheme and beneficial effect further describe; institute is understood that; the foregoing is only specific embodiments of the invention, be not limited to the present invention, within the spirit and principles in the present invention all; any modification of making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in.
Claims (8)
1. a manufacture method for laser array and wave multiplexer monolithic integrated chip, comprises the steps:
Step 1: growing n-type InP resilient coating successively on N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer and InP sacrifice layer, form substrate, a side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: inject P ion rapid thermal annealing in the InP in wave multiplexer district sacrifice layer;
Step 3: remove InP sacrifice layer, make grating in the InGaAsP of active area grating layer;
Step 4: growing p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that in active area, form each laser element form wave multiplexer ridge waveguide;
Step 6: make p electrode on the ridge waveguide of active area;
Step 7: attenuate N-shaped InP substrate, and make n electrode at its back side, complete preparation.
2. a manufacture method for laser array and wave multiplexer monolithic integrated chip, comprises the steps:
Step 1: growing n-type InP resilient coating successively on N-shaped InP substrate, N-shaped AlGaInAs covering, AlGaInAs multiple quantum well layer, p-type AlGaInAs covering, InP wall, InGaAsP grating layer, form substrate, a side of this substrate is active area, and opposite side is wave multiplexer district;
Step 2: make grating in the InGaAsP of active area grating layer;
Step 3: growing p-type InP covering and p-type InGaAs contact layer on the InGaAsP grating layer in active area and wave multiplexer district;
Step 4: at wave multiplexer district sputter SiO
2and rapid thermal annealing;
Step 5: adopt dry etching to remove p-type InGaAs contact layer, p-type InP covering, InGaAsP grating layer, InP wall, the ridge waveguide and the wave multiplexer district that in active area, form each laser element form wave multiplexer ridge waveguide;
Step 6: make p electrode on the ridge waveguide of active area;
Step 7: attenuate N-shaped InP substrate, and make n electrode at its back side, complete preparation.
3. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic integrated chip, wherein p-type AlGaInAs covering is the etching stop layer of dry etching.
4. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic integrated chip, the cycle of wherein said grating is identical or different.
5. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic integrated chip, the wave multiplexer in wherein said wave multiplexer district is multiple-mode interfence wave multiplexer or array waveguide grating wave multiplexer.
6. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic integrated chip, wherein said preparing grating is in Zone Full or the subregion of active area.
7. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic integrated chip, the number of wherein said laser element is n, n>=2.
8. the manufacture method of laser array according to claim 1 and 2 and wave multiplexer monolithic integrated chip, wherein the width of the ridge waveguide of laser element is similar and different.
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| CN109256675A (en) * | 2018-09-30 | 2019-01-22 | 武汉电信器件有限公司 | Electro-absorption modulation integration laser chip and preparation method thereof |
| CN112670823A (en) * | 2020-12-23 | 2021-04-16 | 中国科学院半导体研究所 | Method for manufacturing electric absorption modulation laser |
| CN113169517A (en) * | 2018-11-29 | 2021-07-23 | 华为技术有限公司 | Two-section DBR laser and monolithic integrated array light source chip |
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| TWI617081B (en) | 2017-03-23 | 2018-03-01 | 國立中山大學 | Method for fabricating waveguide construction |
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