CN103563025B - Capacitor including the registration features for being directed at insulator layer - Google Patents
Capacitor including the registration features for being directed at insulator layer Download PDFInfo
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- CN103563025B CN103563025B CN201280026605.7A CN201280026605A CN103563025B CN 103563025 B CN103563025 B CN 103563025B CN 201280026605 A CN201280026605 A CN 201280026605A CN 103563025 B CN103563025 B CN 103563025B
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- capacitor
- insulator layer
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- ceramic insulator
- hole
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- 239000003990 capacitor Substances 0.000 title claims abstract description 294
- 239000012212 insulator Substances 0.000 title claims abstract description 254
- 239000000919 ceramic Substances 0.000 claims abstract description 240
- 239000004020 conductor Substances 0.000 claims description 48
- 238000009413 insulation Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000005755 formation reaction Methods 0.000 claims description 8
- 229910052573 porcelain Inorganic materials 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 204
- 239000011248 coating agent Substances 0.000 description 32
- 238000000576 coating method Methods 0.000 description 32
- 229910000679 solder Inorganic materials 0.000 description 17
- 239000000463 material Substances 0.000 description 14
- 230000005611 electricity Effects 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 238000005476 soldering Methods 0.000 description 10
- 230000002093 peripheral Effects 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- 230000000875 corresponding Effects 0.000 description 7
- 238000010891 electric arc Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001884 aluminium oxide Inorganic materials 0.000 description 3
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 230000005405 multipole Effects 0.000 description 3
- -1 silver-platinum Chemical compound 0.000 description 3
- 210000001124 Body Fluids Anatomy 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000010839 body fluid Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000004059 degradation Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 210000001519 tissues Anatomy 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 230000036536 Cave Effects 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229920001721 Polyimide Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N Rhenium Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000005092 Ruthenium Substances 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001808 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000994 depressed Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000002320 enamel (paints) Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001537 neural Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000001737 promoting Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 230000000630 rising Effects 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium(0) Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
In one example, capacitor arrangement can include capacitor and ceramic insulator layer, and wherein capacitor includes that the surface limiting at least one feed-through hole and ceramic insulator layer are attached to this surface.The surface of capacitor can include capacitor registration features, and ceramic insulator layer can include ceramic insulator layer registration features.Such as, before ceramic layer is attached to the surface of capacitor, capacitor registration features and ceramic insulator layer registration features can cooperate with by ceramic insulator layer and capacitor substantial registration.
Description
Technical field
It relates to capacitor arrangement, particularly for the capacitor arrangement in electricity feed-through component.
Background technology
Electricity feedthrough provides the electrical path between sealing enclosure and the point of housing exterior of electronic equipment.Such as,
Implantable medical device (IMD) can use the feedthrough of one or more electricity at the circuit of the enclosure of IMD with outer
Electrical connection is set up between lead-in wire, electrode or sensor outside shell.In feedthrough can include the opening being arranged in shell
Hoop (ferrule), the conductor extending through hoop and insulated enclosure, insulated enclosure support conductor and by conductor with
Hoop electric isolution.
Some IMD include a feedthrough for each conductor leaving IMD.Along with the electronics in IMD sets
For being made less, the shell of IMD also can be made smaller.In some implementations, it is coupled to outside IMD
The quantity of portion's lead-in wire, electrode or sensor has increased.In some cases, uniconductor feedthrough is no longer used to
IMD.The feedthrough of many conductors have been developed that with to through IMD shell multiple conductors (such as, two or three or
Four or more) sealed pathway is provided.Some many conductors feedthroughs include the ceramic substrate being arranged in hoop, and pottery
Porcelain substrate can include being formed in this ceramic substrate or through this ceramic substrate multiple conductive paths.
Summary of the invention
Usually, it relates to include capacitor and the capacitor of the ceramic insulator layer being attached to capacitor surface
Structure.In some instances, capacitor can be monolithic plate-like capacitor, and it includes multiple feed-through hole.Capacitor
At least one capacitor registration features can be included, and ceramic insulator layer can include that at least one ceramic insulator layer is joined
Quasi-feature.This at least one capacitor registration features and this at least one ceramic insulator layer registration features can cooperate with
By ceramic insulator layer and capacitor substantial registration, such as when capacitor and ceramic insulator layer contact with each other.
Such as, ceramic insulator layer can include multiple feed-through hole, the plurality of feed-through hole and the multiple feed-through hole phases in capacitor
Corresponding.The registration features of capacitor and ceramic insulator layer can be easy to multiple feed-through holes of being formed in the capacitor with
The alignment of the multiple feed-through holes formed in ceramic insulator layer.In some instances, at capacitor and ceramics insulator
After layer alignment, ceramic insulator layer can be in turn laminated to the surface of capacitor.In some instances, ceramics insulator
Layer can reduce probability or is essentially prevented between the internal diameter of capacitor and the external diameter of capacitor or is formed at electric capacity
Arc discharge between the proximity conductor accommodated in adjacent bores in device.
In one aspect, it relates to include the capacitor arrangement of capacitor and ceramic insulator layer, wherein electric capacity
Device includes that the surface limiting at least one feed-through hole and ceramic insulator layer are attached to this surface.According to this of the disclosure
Individual aspect, this surface includes capacitor registration features, and ceramic insulator layer includes ceramic insulator layer registration features.
It addition, capacitor registration features and the cooperation of ceramic insulator layer registration features are with by ceramic insulator layer and capacitor base
It is directed in basis.
In yet another aspect, it relates to include limiting the hoop hoop in hole, conductor and being placed in the capacitor in hoop hole
The feed-through component of structure.According to this aspect of the disclosure, capacitor arrangement includes capacitor and ceramic insulator layer,
Wherein capacitor includes that the surface limiting capacitor feed-through hole and ceramic insulator layer are attached to this surface.This surface is wrapped
Include at least one capacitor registration features, and ceramic insulator layer include ceramic insulator layer registration features and with extremely
The ceramic insulator layer feed-through hole of a few capacitor feed-through hole substantial registration.Additionally, capacitor registration features and
The cooperation of ceramic insulator layer registration features is with by ceramic insulator layer and capacitor substantial registration, and conductor is by electricity
Container feed-through hole and ceramic insulator layer feed-through hole.
At additional aspect, it relates to include at least one electric capacity that will be formed on the first surface of capacitor
Device registration features is the most right with at least one the ceramic insulator layer registration features formed in ceramic insulator layer
Accurate method.According to this aspect of the disclosure, the method also includes contacting ceramic insulator layer with first surface
Make at least one capacitor registration features and at least one ceramic insulator layer registration features substantial registration, and
Ceramic insulator layer is attached to first surface.
Accompanying drawing explanation
Fig. 1 is cutting of the filtered feed-through component of the example including plate-like capacitor and attached ceramic insulating layer
Face figure.
Fig. 2 is to include showing of capacitor and ceramic insulator layer before ceramic insulator layer is attached to capacitor
The perspective view of example capacitor arrangement.
Fig. 3 is to include the another of capacitor and ceramic insulator layer before ceramic insulator layer is attached to capacitor
The perspective view of one example capacitor structure.
Fig. 4 is to include the another of capacitor and ceramic insulator layer before ceramic insulator layer is attached to capacitor
The perspective view of one example capacitor structure.
Fig. 5 is to include the another of capacitor and ceramic insulator layer before ceramic insulator layer is attached to capacitor
The perspective view of one example capacitor structure.
Fig. 6 is to include the another of capacitor and ceramic insulator layer before ceramic insulator layer is attached to capacitor
The perspective view of one example capacitor structure.
Fig. 7 is to illustrate the flow chart that can be used for forming the example technique of example capacitor structure.
Detailed description of the invention
Usually, it relates to include capacitor and the capacitor of the ceramic insulator layer being attached to capacitor surface
Structure.In some instances, capacitor can be monolithic plate-like capacitor, and it includes multiple feed-through hole.Capacitor
At least one capacitor registration features can be included, and ceramic insulator layer can include that at least one ceramic insulator layer is joined
Quasi-feature.This at least one capacitor registration features and this at least one insulator layer registration features can cooperate with making pottery
Porcelain insulator layer is directed at capacitor, such as when ceramic insulator layer and capacitor contact with each other.Such as, pottery
Insulator layer can include multiple feed-through hole, and the plurality of feed-through hole is corresponding with the multiple feed-through holes in capacitor.Electric capacity
Device can cooperate with the registration features of ceramic insulator layer with the multiple feed-through holes that will be formed in the capacitor and at pottery
The multiple feed-through hole substantial registration formed in insulator layer.In some instances, once capacitor and ceramic insulation
Body layer substantial registration, then ceramic insulator layer can be in turn laminated to the surface of capacitor.
In some cases, IMD is implanted in different from the target tissue being just stimulated and/or diagnosing in the patient
Position.IMD can be electrically coupled to include that the lead-in wire of electric conductor, electric conductor extend to be positioned at target tissue from IMD
Electrode or sensor.At IMD, electric conductor is through feedthrough or is electrically coupled to the conductive path through feedthrough
Footpath.Leading-in conductor can be used as collecting the antenna of electromagnetic signal (including electromagnetic interference (EMI)).Electromagnetic signal can
Along leading-in conductor transmission, through feedthrough and arrive the circuit in IMD.In some cases, electromagnetic signal
May interfere with normal IMD operation.
EMI owing to the stray electromagnetic signals conducted by leading-in conductor can be by being incorporated to feed-through component by capacitor
Inside solve.Capacitor can be used as low pass filter, and relative high frequency electromagnetic signal is transmitted to ground connection (such as, IMD
Shell) and circuit that rather low-frequency signals is delivered in IMD.In some instances, feed-through component can
The capacitor including the feedthrough of many conductors and accommodating multiple leading-in conductors or array of capacitors.Capacitor or array of capacitors
May be attached to the feedthrough of many conductors so that each conductive path through the feedthrough of many conductors is electrically coupled to capacitor or electricity
Corresponding conductive path in vessel array, simultaneously around each conductive path and between the feedthrough of many conductors and hoop
There is provided and seal.
In other example, IMD may be included in formed on the shell of IMD (such as, without lead-in wire IMD)
Individual or multiple electrodes.In some implementations, the feed-through component wherein having conductor to pass can be included without lead-in wire IMD,
This conductor connects the electrode to without the circuit in lead-in wire IMD.Capacitor arrangement as herein described and feed-through component are also
Can be used for without in lead-in wire IMD.
Fig. 1 be according to the disclosure some in terms of include capacitor arrangement 12 through filtering the showing of feed-through component 10
The sectional view of example.In the example illustrated in figure 1, capacitor arrangement 12 includes capacitor 14, is attached to capacitor 14
First surface 20 the first ceramic insulator layer 16 and be attached to capacitor 14 second surface 22 second
Ceramic insulator layer 18.In the example illustrated in Fig. 1, capacitor 14 is monolithic plate-like capacitor, such as schemes
One of monolithic plate-like capacitor illustrated in 2-6.However, it is contemplated that be monolithic plate-like electricity with wherein capacitor 14
The example that the example of container is different.
Although the most not shown, capacitor 14 can include at least one capacitor registration features, the first pottery
Insulator layer 16 can include at least one ceramics insulator registration features, and the second ceramic insulator layer 18 can be wrapped
Include at least one ceramics insulator registration features.With reference to Fig. 2-6, capacitor registration features and ceramics insulator will be described
The example of registration features.As will be described further, this type of registration features can cooperate with by capacitor 14
The first and/or second ceramic insulator layer 16,18 substantial registration on surface.
Fig. 1 is an example through filtering feed-through component 10, wherein can use capacitor arrangement 12.But, electricity
Structure of container 12 can be used in other feed-through component, such as includes multipole sealed feed-through and many electrode capacitors (such as
Monolithic plate-like capacitor) multipole feed-through component.Wherein can use other feed-through component of capacitor arrangement 12
Entitled " the CAPACITOR ASSEMBLY AND ASSOCIATED that example was submitted on May 6th, 2009
METHOD (capacitor assembly and correlating method) " co-pending batch and commonly assigned U.S. Patent application
Publication number 2010/0284124 is described.
As it is shown in figure 1, include binding round 24 through filtering feed-through component 10, this hoop 24 limits conductor 26 (also referred to as
End pin or feedthrough pin) pass through the hole of extension.Hoop 24 is by may be mounted to that the hole being formed in IMD shell
Interior material is formed.In some instances, the material forming hoop 24 can also is that conductive material.Hoop 24 can be formed
The example of material include titanium, niobium, platinum, molybdenum, zirconium, tantalum, vanadium, tungsten, iridium, rhodium, rhenium, osmium, ruthenium, palladium,
Silver and alloy, mixture and combinations thereof thing.
Splice insulation body sub-component 30 is positioned at the hole limited by hoop 24.Splice insulation body sub-component 30 is relative
In binding round 24 fixed conductors 26 and by conductor 26 and hoop 24 electric insulations.Splice insulation body sub-component 30 also can be formed
Sealing between conductor 26 and hoop 24.
In illustrated example, splice insulation body sub-component 30 includes three assemblies: insulator ring 32, can be by
Conductor-insulator soldering (braze) 34 that gold is made and insulator-hoop soldering (braze) 36.Insulator ring 32
Can be formed of an electrically insulating material, such as electric insulation ceramics.Conductor-insulator soldering 34 and insulator-hoop soldering 36
Such as gold, platinum, platinum alloy or ni-au alloy can be included.In some instances, conductor-insulator soldering 34 He
Insulator-hoop soldering 36 can include same composition, and in other example, conductor-insulator soldering 34 can include
The component different from insulator-hoop soldering 36.When binding round the shell that 24 are attached to IMD, the relatively lower curtate of hoop 24
The part dividing (orientation shown in Fig. 1) and insulator ring 32 can be exposed to body fluid.Conductor-insulator soldering
34 can form sealing between conductor 26 and insulator ring 32, and insulator-hoop soldering 36 can be at insulator ring
Formed between 32 and hoop 24 and seal.Can prevent in the sealing binding round 24, formed between insulator ring 32 and conductor 26
Body fluid enters the enclosure of IMD.
Conductor 26 provides the circuit in IMD shell to the conduction of one or more lead-in wires of IMD housing exterior
Path.As it has been described above, these lead-in wires can be used as collecting the antenna of EMI signal, these EMI signal may interfere with IMD
The operation of interior circuit.Capacitor 14 can be disposed in around conductor 26 and make conductor 26 be passed through capacitor 14
The hole 23 of middle formation.In some instances, capacitor 14 can include multiple pottery (such as Barium metatitanate .) layer be (not
Illustrate), such as stacking and be laminated before these layers by by the material of electrode 19,21 (such as, silver, silver-
Palladium or silver-platinum) it is printed onto on these layers, these layers are formed electrical conductive activities electrode 19 and ground electrode 21.
In one example, active electrode 19 is electrically connected on the periphery in hole 23 the first conductive coating 15 formed.
First conductive coating 15 can be formed on the periphery in hole 23 at least some of on, and in some instances can be by shape
On the most whole periphery of Cheng Kong 23.In some instances, the first extensible capacitor of conductive coating 15 14
The most whole height, and in other example, extensible whole less than capacitor 14 of the first conductive coating 15
Highly.Such as, the first conductive coating 15 can be formed by silver, silver-palladium, silver-platinum or another conductive material.First
Conductive coating 15 can use conductive solder or epoxy resin to be electrically connected to conductor 26.
As described in more detail below, ground electrode 21 such as is electrically connected to jointly connect via the second conductive coating 17
Ground.Being similar to the first conductive coating 15, the second conductive coating can be by such as silver, silver-palladium, silver-platinum or another conduction
Material is formed.Second conductive coating 17 can be formed on the periphery of capacitor 14 at least some of on, and one
A little examples can be formed on the most whole periphery of capacitor 14.In some instances, the second conductive coating
The most whole height of 17 extensible capacitors 14, and in other example, the second conductive coating 17 is extensible
Whole height less than capacitor 14.Although it is the most not shown, such as by using conductive solder, epoxy
Resin or solder technology (such as laser welding), the second conductive coating 17 may be electrically connected to bind round 24.
When binding round 24 and being to be made of an electrically conducting material, conductive path can be present in via capacitor 14 and hoop 24 leads
Between the shell (not shown) of body 26 and IMD.Capacitor 14 can be selected with electrical characteristic, these electricity
Gas characteristic cause the relative high frequency signal of telecommunication (such as, relative high frequency EMI signal) to be filtered by capacitor 14 and via
Hoop 24 is passed to the shell of IMD.Also may select the electrical characteristic of capacitor 14, thus capacitor 14 is only
The filter rather low-frequency signal of telecommunication, such as, represent the letter of the physiological parameter (such as Herzschlag or neural activity etc) of sensing
Number, and these rather low-frequency signals transmit by capacitor 14 and are conducted the electricity to IMD shell by conductor 26
Road.
At some through filtering in feed-through component 10, capacitor arrangement 12 may be included in first surface 20 and/or second
The electric insulation coating layer formed by epoxy resin or another electric insulating copolymer on surface 22.But, as it has been described above,
In some instances, conductor 26 can use solder to be electrically connected to the first conductive coating 15.Similarly, the second conduction
Coating 17 can additionally or alternatively use solder connection to hoop 24.Some solders are (such as, such as based on lead
Solder) can have relatively low fusion temperature.In some implementations, solder based on lead is substituted by lead-free solder,
Unleaded wire bonding material can have fusion temperature more higher than solder based on lead.In some instances, solder (unleaded or
Solder based on lead) can have higher than epoxy resin or the softening temperature of other electric insulating copolymer, fusion temperature or
The eutectic point of degradation temperature, this can make epoxy resin or other electric insulating copolymer for capacitor arrangement 12
In be less desirable.
First ceramic insulator layer 16 and the second ceramic insulator layer 18 can be formed by electric insulation ceramics.Show at some
In example, the first ceramic insulator layer 16 and/or the second ceramic insulator layer 18 include LTCC (LTCC)
Or HTCC (HTCC).First ceramic insulator layer 16 and/or the second ceramic insulator layer 18 can quilts
Being formed as sheet or film, this sheet or film are cut into intended shape and are laminated the most respectively or are otherwise attached to
First surface 20 and/or second surface.LTCC is the ceramic material that sintering temperature is below about 1000 DEG C.LTCC
An example be the mixture of aluminium oxide and glass.In some instances, glass can include calcia-alumina-
Silicon dioxide-boron oxide compound glass.In one example, LTCC may be included in about 90 percentage by weights (wt.%)
Aluminium oxide between about 95wt.% and the mixture of the glass between about 5wt.% and about 10wt.%.
HTCC is the ceramic material of sintering temperature greater than about 1000 DEG C.Example HTCC can include alumina layer.Other
Electric insulation ceramics can be additionally used in the first ceramic insulator layer 16 and/or the second ceramic insulator layer 18.
First ceramic insulator layer 16 and the second ceramic insulator layer 18 can allow to use has higher common junction temperature
Solder (not affecting the performance of layer 16,18), this can be easy to substitute solder based on lead with lead-free solder.
As it has been described above, in some instances, solder can be used for being electrically connected to conductor 26 first conductive coating 15 and/or
It is electrically connected to bind round 24 by the second conductive coating 17.In some instances, the first ceramic insulator layer 16 and/or
Two ceramic insulator layer 18 are provided as film, and these films are attached to the of capacitor 14 the most directly or indirectly
One surface 20 and second surface 22.Such as, the first ceramic insulator layer 16 and/or the second ceramic insulator layer 18
Binding agent can be used to adhere to first surface 20 and the second surface 22 of capacitor 14.In other example, the
One ceramic insulator layer 16 and/or the second ceramic insulator layer 18 can be laminated to electricity by utilizing heat and/or pressure
The first surface 20 of container 14 and second surface 22.
In some instances, the surface (such as, first surface 20 or second surface 22) of capacitor 14 is permissible
It it is conduction.In other example, the first conductive coating 15 and/or the second conductive coating 17 may extend into electric capacity
The first surface 20 of device and/or second surface 22, and can carry at first surface 20 and/or second surface 22
For conductive material.Conductive material at first surface 20 and/or second surface 22 can allow conductor 26 and/
Or first between conductive coating 15 and the second conductive coating 17 or (such as, Fig. 2-6, in multipole at capacitor
In feedthrough) in formed adjacent holes accommodated in adjacent conductor between arc discharge.Such as, by one or many
Some signals of telecommunication that individual lead-in wire is conducted back to IMD via conductor 26 can be relatively high voltage.Such as, heart removes
Quiver the voltage can having between about 780V and about 800V.At first surface 20 and/or second surface 22
Arc discharge be more likely higher voltage.
First ceramic insulator layer 16 and/or the second ceramic insulator layer 18 can be by respectively first surface 20 Hes
/ or second surface 22 at provide electric insulation reduce or be essentially prevented from arc discharge.First ceramic insulator layer 16
And/or second ceramic insulator layer 18 reduce arc discharge occur that the effectiveness of aspect can be by the first ceramic insulation
Body layer 16 and/or the second ceramic insulator layer 18 the most fully cover first surface 20 and/or the second table
The impact of the current-carrying part in face 22.Such as, when the first ceramic insulator layer 16 and/or the second ceramic insulator layer
18 substantially completely cover the first conductive coating 15 and the second conductive coating 17 otherwise can be first surface 20 He
/ or second surface 22 at expose part time, the first ceramic insulator layer 16 and/or the second ceramic insulator layer 18
Occur that aspect can be more effective reducing arc discharge.Because the first ceramic insulator layer 16 and/or the second ceramic insulation
Body layer 18 may be provided as film, so dielectric film can be cut or otherwise molding replicates the first table with basic
Face 20 and/or the feature of second surface 22, such as first surface 20 and/or the periphery of second surface 22 and
The hole 23 formed in first surface 20 and/or second surface 22.In some implementations, be laminated at dielectric film or
Before being otherwise attached to first surface 20 and/or second surface 22, dielectric film can be cut or with other
Mode molding.In this type of realizes, between first surface 20 and the first ceramic insulator layer 16 and/or the
Between two surfaces 22 and the second ceramic insulator layer 16 relatively accurately to improving the first conductive coating 15 He
The covering of the second conductive coating 17 (or other current-carrying part of first surface 20 and/or second surface 22),
This can reduce or be essentially prevented from arc discharge.According to one or more examples of the disclosure, capacitor registration features
May be utilized with ceramic insulator layer registration features so that when wiring capacitance device structure 12 by capacitor 14 and pottery
Porcelain insulator layer 16 and/or 18 is directed at.
Fig. 2 is to include monolithic plate-like electric capacity before ceramic insulator layer 44 is attached to monolithic plate-like capacitor 42
The perspective view of the example capacitor structure 40 of device 42 and ceramic insulator layer 44.Monolithic plate-like capacitor 42 can be with
Capacitor 14 described in reference diagram 1 is essentially identical or similar, such as, may be included in the pottery of monolithic plate-like capacitor 42
The multiple electrical conductive activities electrodes 19 formed on enamel coating and multiple conductive earthing electrode 21.Monolithic plate-like capacitor 42
May additionally include feed-through hole 50a, 50b, 50c and 50d (being referred to as " feed-through hole 50 ") part or all of on
The conductive coating essentially identical or similar to the first conductive coating 15, and the peripheral sidewalls at capacitor 42
43 at least some of on the conductive coating essentially identical or similar to the second conductive coating 15.For clear
Purpose be shown without first conductive coating the 15, second conductive coating 17, electrical conductive activities electrode 19 in fig. 2
And conductive earthing electrode 21.Although it addition, Fig. 2-6 is exemplified with single ceramic insulator layer, but at some
In example, capacitor arrangement can include the first ceramic insulator layer and the second ceramic insulator layer, the electricity of such as Fig. 1
Structure of container 12.During capacitor arrangement includes the example of the first and second ceramic insulator layer wherein, insulator
One or both in the surface being connected to appended by one or both in Ceng and insulator layer can include such as this paper institute
The registration features stated.
Monolithic plate-like capacitor 42 includes the first surface 48 limiting capacitor periphery 46.Peripheral sidewalls 43 along
Capacitor periphery 46 engages first surface 48.First surface 48 limits four feed-through holes 50, and feed-through hole 50 is basic
On to extend through monolithic plate-like capacitor 42 (similar to the second surface (not shown) relative with first surface 48
In the hole 23 shown in Fig. 1).Feed-through hole 50 is configured to accommodate conductor or termination pin (conductor 26 of such as Fig. 1).
Although monolithic plate-like capacitor 42 includes four feed-through holes 50 in FIG, but monolithic plate-like capacitor 42 can
Including the feed-through hole 50 of other quantity, such as at least one, at least two, at least three etc..
First surface 48 limits the first capacitor registration hole 52a and the second capacitor registration hole 52b (system further
It is referred to as " capacitor registration hole 54 ").Capacitor registration hole 52 is easy for ceramic insulator layer 44 and monolithic The registration features of first surface 48 alignment of plate-like capacitor 42.Capacitor registration hole 52 can be at least part of
Extend through the cavity of monolithic plate-like capacitor 42.In some instances, capacitor registration hole 52 only part
Extend through monolithic plate-like capacitor 42, and in other example, capacitor registration hole 52 is from first surface 48
Monolithic plate-like capacitor 42 is extended completely through to the second surface (not shown) relative with first surface 48
In some instances, monolithic plate-like capacitor 42 can include a registration hole or can include that many more than two registrates hole.
It is said that in general, monolithic plate-like capacitor 42 can include that at least one registrates hole.Monolithic plate-like capacitor 42 wherein
In some examples including single registration hole, registration hole (and the corresponding registration pin in ceramic insulator layer 44 and
Registration hole) non-circular shape, such as ellipse, rectangle, square, cross or another polygonal shape can be included,
This can be such as by promoting monolithic plate-like capacitor 42 and the linear alignment of ceramic insulator layer 44 and rotary alignment two
Person is easy to monolithic plate-like capacitor 42 and the alignment of ceramic insulator layer 44.Alternatively or additionally, registration hole
52 positions different from position shown in Fig. 2 that can be located at first surface 48.
As it can be seen, the first registration pin 54a can be inserted in the first capacitor registration hole 52a, and the second registration
Pin 54b can be inserted in the second capacitor registration hole 52b.First registration pin 54a and the second registration pin 54b (system
Be referred to as " registration pin 54 ") can by non-fusible during ceramic insulator layer 44 is laminated to first surface 48,
Soften or be fused to the material formation of monolithic plate-like capacitor 42 and/or ceramic insulator layer 44.Such as, registration
Pin 54 can be formed by the refractory metal of such as tantalum, niobium, tantalum alloy or niobium alloy etc, or by such as aoxidizing
The ceramic material of aluminum etc is formed, and it is higher in the temperature being in turn laminated to first surface 48 than ceramic insulator layer 44
At a temperature of sinter.
Capacitor registration hole 52 and registration pin 54 are formed with the shape and size of complementation.Such as, capacitor
Registration hole 52 can be circular and registration pin 54 can be the cylinder with circular cross-section, as shown in Figure 2.?
In other example, capacitor registration hole 52 can have another shape, such as ellipse, rectangle, square or another
Polygonal shape, and registration pin 54 can have corresponding cross sectional shape.It addition, the size of registration pin 54 is (such as,
Diameter, week footpath or girth) can be selected as the periphery surface of registration pin 54 tight with the periphery that capacitor registrates hole 52
Close engagement or contact.Closely cooperating between registration pin 54 and capacitor registration hole 52 can be easy to ceramics insulator
Layer 44 is directed at first surface 48.Registration pin 54 can with long enough with ceramic insulator layer 44 be placed with
First surface 48 extends through ceramic insulator layer 44 when contacting.
Ceramic insulator layer 44 limits periphery 45 and four feed-through holes 56a, 56b, 56c and 56d (are referred to as " feedback
Through hole 56 ").It addition, ceramic insulator layer 44 limits the first ceramics insulator registration hole 58a and second pottery
Insulator registration hole 58b (is referred to as " registration hole 58 ").Feed-through hole 56 and the registration quantity in hole 58, size
And position is only example, and other example of ceramic insulator layer 44 can include feed-through hole 56 and registration hole
Varying number, size and/or the position of 58.It is said that in general, ceramic insulator layer 44 can include with in monolithic plate-like
The feed-through hole 56 of the quantity that the quantity of the feed-through hole 50 of formation is identical in capacitor 42.
Registration hole 58, feed-through hole 56 make with the relative position of periphery 45 when registration hole 58 registrates hole with capacitor
52 pairs punctual, feed-through hole 56 and feed-through hole 50 substantial registration and periphery 45 and periphery 46 substantial registration.
So, registration hole 58, capacitor registration hole 52 and registration pin 54 cooperate with by ceramic insulator layer 44 and monolithic
First surface 48 substantial registration of plate-like capacitor 42.
The registration hole 58 of ceramic insulator layer 44 can registrate hole 52 substantially phase with capacitor on size and dimension
Seemingly.Such as, registration hole 58 can be circle, ellipse, rectangle, square or another polygonal shape.Such as phase
For described in capacitor registration hole 52, closely cooperating between registration pin 56 and registration hole 58 can be easy to pottery
Insulator layer 44 is directed at first surface 48.
For wiring capacitance device structure 40, or during the initial manufacture of capacitor 42, or in following process
During step, monolithic plate-like capacitor 42 can be formed with feed-through hole 50 and registration hole 52.Multiple technologies
Can be used for being formed feed-through hole 50 and registration hole 52, such as boring, cut, water injection cutting etc..One
In a little examples, the first conductive coating 15 can be formed at least some feed-through hole 50 at least some of on, and the
Two conductive coatings 17 can be formed on peripheral sidewalls 43 at least some of on.
Ceramic insulator layer 44 can be formed by ceramics insulator film, such as LTCC film or HTCC film.At some
In example, such as cut can be used from this film ceramic cutting insulator layer 44.Forming ceramic insulator layer
During 44, such as identical with for ceramic cutting insulator layer 44 process can be used in ceramic insulator layer 44
Middle formation feed-through hole 56 and registration hole 58.Cutting process can be by such as computer numerical control (CNC) machine etc
Computer control so that accurately relative localization periphery 45, feed-through hole 46 and registration hole 58.
Registration pin 54 is then placed in capacitor registration hole 52, and ceramic insulator layer 44 is placed on the
On one surface 48, wherein registration hole 58 is directed at registration pin 54.Registration hole 58, registration pin 54 and registration hole
52 cooperations are with first surface 48 substantial registration by ceramic insulator layer 44 with monolithic plate-like capacitor 42.Example
As, including feed-through hole 56 and periphery 45 ceramic insulator layer 44 can with include feed-through hole 50 and periphery 46
First surface 48 substantial registration of monolithic plate-like capacitor 42.
Once after registration, ceramic insulator layer 44 may be attached to first surface 48.In some implementations, pottery
Insulator layer 44 can use such as that polyimides, the binding agent of glass material etc adhere to first surface 48.
In other example, ceramic insulator layer 44 can use temperature and pressure to be laminated to first surface 48.Such as,
When ceramic insulator layer 44 includes LTCC, layer 44 can temperature between about 800 DEG C and about 900 DEG C and
It is laminated to first surface 48 under pressure between about 800 pound per square inches (psi) and about 1500psi.
After ceramic insulator layer 44 is laminated to first surface 48, registration pin 54 can be removed.
Fig. 3 is to include monolithic plate-like electric capacity before ceramic insulator layer 44 is attached to monolithic plate-like capacitor 62
The perspective view of the example capacitor structure 60 of device 62 and ceramic insulator layer 44.As described in reference to Figure 2, pottery
Insulator layer 44 limits periphery 45, feed-through hole 56 and registration hole 58.
Monolithic plate-like capacitor 62 includes the first surface 48 limiting periphery 46, periphery 46 and peripheral sidewalls 43
Engage, as described in reference to Figure 2.It addition, first surface 48 limits four feed-through holes 50.Replace as relative to figure
The registration hole 52 limited by first surface 48, monolithic plate-like electric capacity is included described in the monolithic plate-like capacitor 42 of 1
Device 62 is included on first surface 48 the first registration prominent 64a and the second prominent 64b of registration formed and (is referred to as
" registration prominent 64 ").Registration prominent 64 is easy for being directed at first surface 48 and ceramic insulator layer 44
Capacitor registration features.In some instances, monolithic plate-like capacitor 62 can include that registration is prominent or can
Prominent including many more than two registration.It is said that in general, monolithic plate-like capacitor 62 can include that at least one registration is prominent.
As described above with reference to Figure 2, in some instances, the prominent non-circular shape that can include of single registration, such as oval
Shape, square, rectangle, cross or other polygon.Alternatively or additionally, registration prominent 62 can be located at the
The position different from position shown in Fig. 3 on one surface 48.
In some instances, registration prominent 64 is by a kind of material shape in the material forming monolithic plate-like capacitor 62
Become.Such as, registration prominent 64 can be formed by the electric insulation ceramics material used in monolithic plate-like capacitor 62,
Such as Barium metatitanate..In some instances, registration prominent 64 can be formed during manufacturing monolithic plate-like capacitor 62.
In other example, registration prominent 64 can be respectively formed with the manufacture of monolithic plate-like capacitor 62, such as, inciting somebody to action
Before ceramic insulator layer 44 is attached to first surface 48.
Registration prominent 64 and registration hole 58 are formed with the shape and size of complementation.Such as, registration is prominent
64 can be the cylinder with circular cross-section, and registration hole 58 can be circular, as shown in Figure 3.At other
In example, registration prominent 64 can have another cross sectional shape, and such as ellipse, rectangle, square or another is polygon
Shape shape, and registration hole 58 can have corresponding shape.It addition, the size of registration prominent 64 (such as, diameter,
Week footpath or girth) can be selected as registrate hole 58 periphery surface with registration highlight 64 perimetral tight engage or connect
Touch.Closely cooperating between registration prominent 64 and registration hole 58 can be easy to ceramic insulator layer 44 and the first table
Face 48 is directed at.Registration prominent 64 can be with long enough to be placed with and first surface 48 in ceramic insulator layer 44
Ceramic insulator layer 44 is extended through during contact.
Registration hole 58, feed-through hole 56 make with the relative position of periphery 45 when registration hole 58 and registration prominent 64
During pairing, feed-through hole 56 and feed-through hole 50 substantial registration and periphery 45 and periphery 46 substantial registration.So,
Registration hole 58 and prominent 64 cooperations of registration are with the first table by ceramic insulator layer 44 with monolithic plate-like capacitor 62
Face 48 substantial registration.
Fig. 4 is to include monolithic plate-like electric capacity before ceramic insulator layer 74 is attached to monolithic plate-like capacitor 72
The perspective view of the example capacitor structure 70 of device 72 and ceramic insulator layer 74.
Monolithic plate-like capacitor 72 includes the first surface 78 limiting four feed-through holes 50.As it has been described above, at it
In its example, first surface 78 can limit the feed-through hole 50 of another quantity, and generally can limit at least one feedback
Through hole.It addition, first surface 78 limits periphery 76, periphery 76 engages with peripheral sidewalls 73.At Fig. 2 and Tu
In 3, monolithic plate-like capacitor 42,62 limits the periphery of substantially disc-shaped (such as, elliptical or oval shape).?
In example shown in Fig. 4, monolithic plate-like capacitor 72 limits periphery 76, and periphery 76 includes interrupting (disrupt)
The first of the disc shaped of capacitor 72 highlights 86a and second and highlights 86b (being referred to as " prominent 86 ").Prominent
Going out 86 is the part of peripheral sidewalls 73, and can extend to second relative with first surface 78 from first surface 78
Surface (not shown).
At first surface 78 is in all part of prominent 86 parts, forms the first prominent 80a of registration and the
The two prominent 80b of registration (are referred to as " registration prominent 80 ").Registration prominent 80 is similar to relative to described in Fig. 3
Registration highlight 64.Registration prominent 80 is easy for electric capacity first surface 78 and ceramic insulator layer 74 being directed at
Device registration features.
Although Fig. 4 is exemplified with including two prominent 86 and two the monolithic plate-like capacitors 72 registrating prominent 80,
But in other example, monolithic plate-like capacitor 72 can include many more than two highlight 86 and/or many more than two join
Accurate prominent 80.In some instances, each highlighted in 86 includes that the registration being formed on highlights 80.Make
For alternatively or additionally, one or more registrations highlight in 80 parts that can be formed on first surface 78, this portion
It it not point the part of one of prominent 86.
In some instances, highlight 86 and/or registrate prominent 80 by the material forming monolithic plate-like capacitor 72
A kind of material formed.Such as, prominent 86 and/or registration prominent 80 can be made by monolithic plate-like capacitor 72
Electric insulation ceramics material formed, such as Barium metatitanate..In some instances, highlight 86 and/or registrate prominent 80
Can be formed during manufacturing monolithic plate-like capacitor 72.In other example, prominent 86 and/or registration prominent 80
Can be respectively formed with the manufacture of monolithic plate-like capacitor 72, such as, ceramic insulator layer 74 is being attached to first
Before surface 78.
Ceramic insulator layer 74 limits periphery 88 and four feed-through holes 56.Ceramic insulator layer 74 includes that first dashes forward
Go out 84a and second and highlight 84a (being referred to as " prominent 84 "), itself and prominent the 86 of monolithic plate-like capacitor 72
Basic coupling and alignment dimensionally.Ceramic insulator layer 74 limits the first the first ceramic insulation highlighting in 84a
Body registration hole 82a and second highlights the second ceramics insulator registration hole 82b in 84b.It is said that in general, it is ceramic
Insulator layer 74 can include prominent with the feed-through hole 50 formed in monolithic plate-like capacitor 72, prominent 86 and registration
Go out quantity and the identical quantity in location and the feed-through hole 56 of location, prominent 84 and the capacitor registration hole 82 of 80.
The registration being similar to Fig. 3 highlights 64 and registrates hole 58, and registration prominent 80 is formed with registration hole 82 mutually
The shape and size mended.Prominent 84, registration hole 82, feed-through hole 56 make with the relative position of periphery 88 when join
Quasi-hole 82 and registration prominent 80 are on time, and feed-through hole 56 and feed-through hole 50 substantial registration and periphery 88 are with all
Limit 76 substantial registration.So, registration hole 82 80 cooperations prominent with registration are with by ceramic insulator layer 74 and list
First surface 78 substantial registration of sheet plate-like capacitor 72.
Fig. 5 is to include monolithic plate-like electric capacity before ceramic insulator layer 94 is attached to monolithic plate-like capacitor 92
The perspective view of the example capacitor structure 90 of device 92 and ceramic insulator layer 94.In the example depicted in fig. 5,
Capacitor registration features includes at least some of from monolithic plate-like of the periphery 106 along monolithic plate-like capacitor 92
The first registration prominent 102a and second registration that the first surface 98 of capacitor 92 substantially perpendicularly extends is prominent
102b (is referred to as " registration prominent 102 ").Ceramics insulator registration features includes ceramic insulator layer 94
Periphery 96.
Monolithic plate-like capacitor 92 includes that limiting four feed-through holes 100a, 100b, 100c, 100d (is referred to as " feedback
Through hole 100 ") first surface 98.As it has been described above, in other example, first surface 98 can limit another
The feed-through hole 100 of quantity, and generally define at least one feed-through hole.It addition, first surface 98 limits periphery
106, periphery 106 engages with peripheral sidewalls 93.Peripheral sidewalls 93 extends to and first surface from first surface 98
98 substantially opposite second surface (not shown).In the example depicted in fig. 5, monolithic plate-like capacitor 92
Limit the registration substantially perpendicularly extended (at a right angle) from first surface 98 and highlight 102.In Figure 5,
Registration prominent 102 extends along the sweep of the periphery 106 of first surface 98.In other example, monolithic
Plate-like capacitor 92 can include many more than two registration prominent 102, and at least one registration prominent 102 can be located at edge
The diverse location of periphery 106.In some instances, monolithic plate-like capacitor 92 can include peripherally 106
At least some of formed single prominent.In some implementations, can peripherally 106 the most whole length shape
Become single prominent.It is said that in general, monolithic plate-like capacitor 92 can include peripherally 106 at least one formed
Prominent.Registration prominent 102 can have the height measured from first surface 98, this most at least with ceramics insulator
Being of uniform thickness of layer 94 is big.
Ceramic insulator layer 94 limits periphery the 96, first feed-through hole 104a, the second feed-through hole 104b, the 3rd feedback
Through hole 104c and the 4th feed-through hole 104d (is referred to as " feed-through hole 104 ").It is said that in general, ceramics insulator
Layer 94 include the quantity identical with the quantity of feed-through hole 100 of formation in monolithic plate-like capacitor 92 and location and
The feed-through hole 104 of location.
The periphery 96 of ceramic insulator layer 94 is formed and adjusts size so that ceramic insulator layer 94 is substantially
Cover first surface 98 and periphery 96 102 substantial registration prominent with registration.Such as, as it is shown in figure 5, periphery
96 include the first stepped portion 108a, the second stepped portion 108b, the 3rd stepped portion 108c and fourth order
Ladder part 108d (being referred to as " stepped portion 108 ").Periphery 96 also include the first sweep 110a,
Two sweep 110b (being referred to as " sweep 110 "), the first straight line portion 112a and the second line part
Divide 112b (being referred to as " straight line portion 112 ").First stepped portion 108a by the first sweep 110a and
First straight line portion 112a connects.Second stepped portion 108b is by the first straight line portion 112a and the second bending section
110b is divided to connect.Second sweep 110b and the second straight line portion 112b is connected by the 3rd stepped portion 108c.
Second straight line portion 112b and the first sweep 110a is connected by fourth order ladder part 108c.
Stepped portion 108, sweep 110 and straight line portion 112 are resized and are formed so as to pottery absolutely
Edge body layer 94 covers the substantially all of first surface 98 and stepped portion 108 contacts registration with sweep 110
Prominent 102 with substantial registration ceramics insulator 94 and first surface 98.Such as, stepped portion 108 and bending
Part 110 can contact registration prominent 102 and with the feed-through hole 100 of substantial registration monolithic plate-like capacitor 92 and make pottery
The feed-through hole 104 of porcelain insulator layer 104.So, periphery 96 and prominent 102 cooperations of registration are with by ceramic insulation
Body layer 94 and first surface 98 substantial registration of monolithic plate-like capacitor 92.
Although Fig. 2-5 example shown exemplified with before ceramic insulator layer is directed at monolithic plate-like capacitor
Wherein restriction feed-through hole and the ceramic insulator layer of periphery, but in some instances, can be in ceramic insulator layer
Before forming periphery and/or feed-through hole, ceramic insulator layer and monolithic plate-like capacitor are directed at.Fig. 6 is at pottery
Periphery and feedthrough is limited before insulator layer 124 is attached to capacitor 122 and in ceramic insulator layer 124
The example capacitor structure 120 including monolithic plate-like capacitor 122 and ceramic insulator layer 124 before hole saturating
View.
In the example shown in fig. 6, monolithic plate-like capacitor 122 includes the first surface 128 limiting periphery 126,
Periphery 126 engages with peripheral sidewalls 123.It addition, first surface 128 limit four feed-through hole 130a, 130b,
130c, 130d (are referred to as " feed-through hole 130 ").Monolithic plate-like capacitor 122 is included in first surface 128
First registration prominent 132a and the second prominent 132b of registration (being referred to as " registration prominent 132 ") of upper formation.
Registration prominent 132 with highlighting 64 relative to the registration described in Fig. 3 and/or can highlight relative to the registration described in Fig. 4
80 identical or basic simlarity.
Ceramic insulator layer 124 includes that limiting the first registration hole 134a and second registration hole 134b (is referred to as " joining
Quasi-hole 134 ") film.As it has been described above, registration prominent 132 and registration hole 134 are formed with the number of complementation
Amount, shape and size.
After registration hole 134 is directed at registration prominent 132, ceramic insulator layer 124 is placed as and the first table
Face 128 contacts.Registration hole 134 and prominent 132 cooperations of registration are with by ceramic insulator layer 124 and monolithic plate-like electricity
First surface 128 substantial registration of container 122.Once contact with first surface 128, ceramic insulator layer
124 can be attached or be laminated to first surface 128, as mentioned above.It is laminated in ceramic insulator layer 124
After one surface 128, can be at the feed-through hole 130 with monolithic plate-like capacitor 122 in ceramic insulator layer 124
Substantially corresponding position cutting feed-through hole.It addition, ceramic insulator layer 124 can be cut to limit and monolithic
The periphery that the periphery 126 of plate-like capacitor 122 essentially corresponds to.In some instances, cut can be used
Carry out ceramic cutting insulator layer 124.
Alternatively, and layer 124 can adhered to or is being laminated after being set to contact with first surface 128 by layer 124
Ceramic cutting insulator layer 124 before first surface 128.The once periphery of ceramic insulator layer 124 and pottery
The feed-through hole of insulator layer 124 is the most cut, then ceramic insulator layer 124 can be attached, be laminated or with other
Mode is attached to first surface 128.
Although Fig. 2-6 essentially describes the registration hole formed in ceramic insulator layer and from capacitor extension
Registration pin or registration are prominent, but in other example, can be formed in the surface of capacitor registration cave in or hole and
Registration can be formed prominent in ceramic insulator layer.In some instances, ceramic insulator layer can include registrate hole and
Both registration is prominent, and capacitor can include registrating prominent and registration depression or hole accordingly.Alternatively or additionally,
Although Fig. 2-6 has been described as independent example, but the registration features described in every width figure can make in conjunction
With.Such as, capacitor can include prominent (Fig. 6) of extending from the surface of capacitor along the periphery of capacitor and
And may also include prominent (such as Fig. 3) that the periphery away from capacitor is formed.
Fig. 7 is the stream that can be used for being formed the example technique of capacitor arrangement illustrating some examples according to the disclosure
Cheng Tu.The example technique of Fig. 7 will be described mainly with respect to capacitor arrangement 40 (Fig. 2)；But, this technology
Can be applicable to the capacitor arrangement 60 of Fig. 3, the capacitor arrangement 70 of Fig. 4, the capacitor arrangement 90 of Fig. 5, figure
The capacitor arrangement 120 of 6 or other capacitor arrangement.It is said that in general, this technology can include making pottery at least one
Porcelain insulator layer registration features and at least one capacitor registration features (such as, capacitor registration hole 52 and registration
Pin 54) alignment (144).As it has been described above, this at least one ceramic insulator layer registration features can include registrating hole
(such as, registration hole 58,82,134), the periphery (such as, periphery 96) of ceramic insulator layer and/or
The feature (such as, stepped portion 108 and sweep 110) formed in the periphery of ceramic insulator layer.Such as,
This at least one capacitor registration features can include capacitor registration hole 52 and registration pin 54 or registration is prominent 64,
80、102、132.Capacitor registration features and ceramic insulator layer registration features cooperation with by ceramic insulator layer with
The surface substantial registration of monolithic plate-like capacitor.
Once at least one ceramic insulator layer registration features is directed at (144) with at least one capacitor registration features,
So ceramic insulator layer 44 can be set to contact with the first surface 48 of monolithic plate-like capacitor 42 and be attached
To first surface 48 (146).As it has been described above, ceramic insulator layer 44 can be attached or be laminated to first surface
48.Such as, when ceramic insulator layer 44 includes LTCC, layer 44 can be between about 800 DEG C and about 900 DEG C
Temperature and under about 800 pounds of pressure between psi and about 1500psi, be laminated to first surface 48.
In some instances, can ceramic insulator layer 44 is laminated to monolithic plate-like capacitor 42 (146) it
The feed-through hole 56 of front formation ceramic insulator layer 42 and periphery 45.In other example, can be by ceramic insulation
Body layer 44 forms the feed-through hole 56 of ceramic insulator layer 42 after being laminated to monolithic plate-like capacitor 42 (146)
With periphery 45, as mentioned above.
Example
Ceramics insulator including LTCC component is in turn laminated on the surface of monolithic plate-like capacitor form electric capacity
Device structure.LTCC component be included in the aluminium oxide between about 90wt.% and about 95wt.% and at about 5wt.% and
Glass (CaO-Al between about 10wt.%2O3-SiO2-B2O3).Between about 800 DEG C and about 900 DEG C and
Under pressure between about 800psi and about 1500psi, LTCC component layers is depressed into capacitor.
Capacitor arrangement is assembled in feed-through component subsequently.Solder is used to be connected in feed-through hole by capacitor arrangement
Feedthrough pin and along the feedthrough hoop of capacitor periphery.Via the electrical connection with hoop, capacitor is connected to ground connection.
Feed-through component stand 5 cycles between-55 DEG C and 125 DEG C thermal vibration test and at about 125 DEG C and
Aging (burn-in) test under the 1000V bias voltage applied between feedthrough pin and hoop.
After degradation regulates, feed-through component is by electric test.First, feed-through component stand at feedthrough pin and
There is between ground connection 1300V and there is between adjacent feedthrough pin the pulse test of 1000V.The rising of pulse
Time is between about 1 and 2 microseconds and time of staying of pulse is about 18 microseconds.
Feed-through component is also subject to electrolyte voltage-withstand test.The voltage of 1300V is applied between feedthrough pin and ground connection,
And between adjacent feedthrough pin, apply the voltage of 1000V.Each voltage keeps 5 seconds at crest voltage.
Finally, feed-through component stands megger test.The voltage of 1300V is applied between feedthrough pin and ground connection,
And between adjacent feedthrough pin, apply the voltage of 1000V.Measure resistance, and it is more than 30 begohms.Feedthrough
Assembly and capacitor arrangement do not have fault by all above-mentioned tests.
Claims (18)
1. a capacitor arrangement, including:
Capacitor, it surface including limiting at least one feed-through hole, wherein said surface includes capacitor registration spy
Levying, wherein said capacitor registration features and at least one feed-through hole described are separated；And
Being attached to the ceramic insulator layer on described surface, wherein said ceramic insulator layer includes that ceramic insulator layer is joined
Quasi-feature, and wherein said capacitor registration features and the cooperation of described ceramic insulator layer registration features are with by described pottery
Porcelain insulator layer and described capacitor substantial registration.
2. capacitor arrangement as claimed in claim 1, it is characterised in that described capacitor registration features includes
Registration hole.
3. capacitor arrangement as claimed in claim 1, it is characterised in that described capacitor registration features includes
The registration substantially perpendicularly extended from described surface highlights.
4. capacitor arrangement as claimed in claim 3, it is characterised in that described surface includes periphery, and institute
State the prominent part extension along described periphery.
5. capacitor arrangement as claimed in claim 3, it is characterised in that described ceramic insulator layer registration spy
Levy the shape of the periphery including described ceramic insulator layer.
6. the capacitor arrangement as according to any one of claim 1 to 5, it is characterised in that described pottery is exhausted
Edge body layer limits at least one feed-through hole, and when at least one capacitor registration features described and at least one pottery described
At least one feedback described in limiting in described ceramic insulator layer during porcelain insulator layer registration features substantial registration
Through hole and at least one feed-through hole substantial registration described in restriction in the surface of described capacitor.
7. the capacitor arrangement as according to any one of claim 1 to 5, it is characterised in that described pottery is exhausted
Edge body layer includes at least one in LTCC (LTCC) or HTCC (HTCC).
8. capacitor arrangement as claimed in claim 6, it is characterised in that described ceramic insulator layer includes low
At least one in temperature common burning porcelain (LTCC) or HTCC (HTCC).
9. a feed-through component, including:
Hoop, it limits hoop hole；
Conductor；And
Capacitor arrangement as according to any one of claim 1 to 8.
10. for the method forming capacitor arrangement, including:
By at least one the capacitor registration features formed on the first surface of capacitor and in ceramic insulator layer
At least one ceramic insulator layer registration features substantial registration of middle formation；
Described ceramic insulator layer is contacted with described first surface and makes described at least one capacitor registration spy
At least one ceramic insulator layer registration features substantial registration described in seeking peace；And
Described ceramic insulator layer is attached to described first surface,
Wherein, in the case of without conductor is passed the feed-through hole in described capacitor arrangement, described ceramic insulation
Body layer and described capacitor are aligned.
11. methods as claimed in claim 10, it is characterised in that at least one ceramic insulator layer described is joined
Quasi-feature includes that at least one registrates hole, and at least one capacitor registration features described includes that at least one capacitor is joined
Quasi-hole, described method also includes registration pin being placed in described at least one capacitor registration hole, and by described pottery
Insulator layer contacts with described first surface and makes at least one capacitor registration features and described at least one described
Individual ceramic insulator layer registration features substantial registration includes described ceramic insulator layer and described first surface phase
Contact and at least one registration hole described in described ceramic insulator layer is placed in around at least one registration pin described.
12. methods as claimed in claim 10, it is characterised in that at least one ceramic insulator layer described is joined
Quasi-feature includes that at least one registrates hole, and at least one capacitor registration features described includes that at least one registration is prominent
Go out, and described ceramic insulator layer is contacted with described first surface and makes described at least one capacitor registration spy
At least one ceramic insulator layer registration features substantial registration described of seeking peace include by described ceramic insulator layer with
Described first surface contact and by described in described ceramic insulator layer at least one registration hole be placed in described at least
One registration is prominent around.
13. methods as claimed in claim 10, it is characterised in that at least one ceramic insulator layer described is joined
Quasi-feature includes that ceramic insulator layer periphery, at least one capacitor registration features described include along described capacitor
At least one registration of periphery prominent, and described ceramic insulator layer is contacted with described first surface and makes institute
State at least one capacitor registration features and at least one ceramic insulator layer registration features substantial registration bag described
Include and described ceramic insulator layer contacts with described first surface and makes described ceramic insulator layer periphery with described
The prominent engagement of at least one registration.
14. methods as according to any one of claim 10 to 13, it is characterised in that be additionally included in institute
State at least one the capacitor registration features described formed on the described first surface of capacitor exhausted with at described pottery
Before at least one the ceramic insulator layer registration features substantial registration described formed in edge body layer, at described pottery
Insulator layer cuts at least one feed-through hole.
15. methods as according to any one of claim 10 to 13, it is characterised in that by described ceramic insulation
Body layer is attached to described first surface and includes described ceramic insulator layer is adhered to described first surface.
16. methods as claimed in claim 14, it is characterised in that described ceramic insulator layer is attached to institute
State first surface to include described ceramic insulator layer is adhered to described first surface.
17. methods as according to any one of claim 10 to 13, it is characterised in that by described ceramic insulation
Body layer be attached to described first surface be included in the temperature between 800 DEG C and 900 DEG C and at 800psi and
Under pressure between 1500psi, described ceramic insulator layer is laminated to described capacitor.
18. methods as claimed in claim 14, it is characterised in that described ceramic insulator layer is attached to institute
State first surface and be included in the temperature between 800 DEG C and 900 DEG C and the pressure between 800psi and 1500psi
Lower described ceramic insulator layer is laminated to described capacitor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/149,600 | 2011-05-31 | ||
| US13/149,600 US8644002B2 (en) | 2011-05-31 | 2011-05-31 | Capacitor including registration feature for aligning an insulator layer |
| PCT/US2012/039826 WO2012166709A2 (en) | 2011-05-31 | 2012-05-29 | Capacitor including registration feature for aligning an insulator layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103563025A CN103563025A (en) | 2014-02-05 |
| CN103563025B true CN103563025B (en) | 2016-11-30 |
Family
ID=
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|---|---|---|---|---|
| US5333095A (en) * | 1993-05-03 | 1994-07-26 | Maxwell Laboratories, Inc., Sierra Capacitor Filter Division | Feedthrough filter capacitor assembly for human implant |
| US6275369B1 (en) * | 1997-11-13 | 2001-08-14 | Robert A. Stevenson | EMI filter feedthough terminal assembly having a capture flange to facilitate automated assembly |
| US6414835B1 (en) * | 2000-03-01 | 2002-07-02 | Medtronic, Inc. | Capacitive filtered feedthrough array for an implantable medical device |
| US6529103B1 (en) * | 2000-09-07 | 2003-03-04 | Greatbatch-Sierra, Inc. | Internally grounded feedthrough filter capacitor with improved ground plane design for human implant and other applications |
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5333095A (en) * | 1993-05-03 | 1994-07-26 | Maxwell Laboratories, Inc., Sierra Capacitor Filter Division | Feedthrough filter capacitor assembly for human implant |
| US6275369B1 (en) * | 1997-11-13 | 2001-08-14 | Robert A. Stevenson | EMI filter feedthough terminal assembly having a capture flange to facilitate automated assembly |
| US6414835B1 (en) * | 2000-03-01 | 2002-07-02 | Medtronic, Inc. | Capacitive filtered feedthrough array for an implantable medical device |
| US6529103B1 (en) * | 2000-09-07 | 2003-03-04 | Greatbatch-Sierra, Inc. | Internally grounded feedthrough filter capacitor with improved ground plane design for human implant and other applications |
| US6566978B2 (en) * | 2000-09-07 | 2003-05-20 | Greatbatch-Sierra, Inc. | Feedthrough capacitor filter assemblies with leak detection vents |
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