CN103578905A - Inductively coupled plasma processing device - Google Patents

Inductively coupled plasma processing device Download PDF

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Publication number
CN103578905A
CN103578905A CN201210265954.6A CN201210265954A CN103578905A CN 103578905 A CN103578905 A CN 103578905A CN 201210265954 A CN201210265954 A CN 201210265954A CN 103578905 A CN103578905 A CN 103578905A
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radio
strutting piece
frequency coil
adjustment column
coil
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CN103578905B (en
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佘清
吕铀
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Abstract

The invention discloses an inductively coupled plasma processing device which comprises a reaction cavity provided with a dielectric cap, a radio frequency coil and a wafer supporting device for supporting a wafer, wherein the radio frequency coil is installed above the dielectric cap through a coil supporting device and used for inductively coupling radio frequency energy into the reaction cavity so as to produce and maintain plasmas in the reaction cavity, and a distance between the radio frequency coil and the wafer supporting device is adjusted by adjusting the position of the radio frequency coil on the coil supporting device. The position of the radio frequency coil on the coil supporting device of the inductively coupled plasma processing device is adjustable, accordingly a distance between the radio frequency coil and the wafer is adjustable, a process window is enlarged, the distribution of the plasmas reaching to the surface of the wafer can be changed by adjusting the distance between the radio frequency coil and the wafer, and further the process treatment effect of the wafer is improved.

Description

Inductively coupled plasma treatment facility
Technical field
The present invention relates to semiconductor processing equipment field, especially relate to a kind of inductively coupled plasma treatment facility.
Background technology
Plasma apparatus is widely used in the manufacture crafts such as semiconductor, solar cell, flat panel display.In current manufacturing process, the plasma generation mode of having used has: direct-current discharge, capacitance coupling plasma (CCP) type, the types such as inductively coupled plasma (ICP) type and Ecr plasma (ECR).The electric discharge of these types is at present widely used in physical vapor deposition (PVD), plasma etching and plasma activated chemical vapour deposition etc.
In inductively coupled plasma equipment, the application of solenoid type radio-frequency coil is very extensive, conventionally solenoid type coil is arranged on the top of reaction chamber, by making activated plasma in reaction chamber to coil input radio frequency power, the position of coil above reaction chamber is normally changeless.Because coil is the source that produces plasma, so the impact of the parameter of coil variation plasma very greatly.Conventionally, those skilled in the art habitually attempts to improve by improving the concrete structure of coil the plasma characteristics that it excites.Therefore, how by adjusting the parameters of coil, to reach the isoionic distribution of improvement, and then the process results having reached is the problem that those skilled in the art face.
Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art.
For this reason, one object of the present invention is to propose a kind of inductively coupled plasma treatment facility of adjustable radio-frequency coil vertical position.
Inductively coupled plasma treatment facility provided by the invention, comprising: the reaction chamber with dielectric cap; Radio-frequency coil, described radio-frequency coil is arranged on described dielectric cap top by coil support device, for radio-frequency (RF) energy induction is coupled to described reaction chamber to produce and to maintain plasma in described reaction chamber; And wafer support, for supporting wafers, the distance between wherein said radio-frequency coil and described wafer support regulates by adjusting the position of described radio-frequency coil on described coil support device.
Inductively coupled plasma treatment facility provided by the invention, the position of radio-frequency coil on coil bracing or strutting arrangement is adjustable, thereby the distance between adjustable radio-frequency coil and wafer, increased process window, by regulating the distance between radio-frequency coil and wafer, can change the distribution of the plasma that arrives wafer surface, and then improve the PROCESS FOR TREATMENT effect of wafer.
In addition, inductively coupled plasma treatment facility provided by the invention also comprises: detection system, for detection of the treatment process parameter of wafer; For driving described coil support device to adjust the driving mechanism of the position of described radio-frequency coil on described coil support device; For driving mechanism described in the process parameter control detecting according to described detection system, automatically adjust the control system of the position of described radio-frequency coil on described coil support device, and then can be real-time according to process results, adjust the distance between coil and wafer, therefore can improve the efficiency of plasma processing.
Particularly, described wafer processing process parameter is at least one in the film thickness uniformity depositing on plasma density in described reaction chamber, the plasma distribution uniformity in described reaction chamber, the deposition/etch speed on described wafer, described wafer.Thereby guaranteed the technological effect of wafer, guaranteed the uniformity of wafer engraving and deposition.
Described coil support device comprises: mounting means and lower installed part; N adjustment column, the two ends of described adjustment column are connected with lower installed part with described mounting means respectively, and a described n adjustment column is arranged on same circumference; N strutting piece, a described n strutting piece is located at accordingly respectively in a described n adjustment column and is adjustable along the vertical position of described adjustment column, and described in each, strutting piece is provided with the circumferential recess for coordinating with the periphery of described radio-frequency coil, and n is more than or equal to 1 integer.
Radio-frequency coil is fixed on n strutting piece, when adjusting the vertical position of each strutting piece in corresponding adjustment column, n strutting piece can drive radio-frequency coil to move, thereby the vertical position of capable of regulating radio-frequency coil, increased process window, and this n strutting piece profile is less, therefore its impact for radiofrequency field is less, and only need radio-frequency coil can be supported on to different vertical positions with a set of coil support device, reduced cost, without the coil support device of changing different model, regulate the vertical position of radio-frequency coil, and this coil support apparatus structure is simple, radio-frequency coil can be conveniently installed.
Further, described circumferential recess is a plurality of, and described a plurality of circumferential recess arranges along the vertical interval of described strutting piece, thereby is convenient to the machine-shaping of each strutting piece, and is convenient to radio-frequency coil and is installed on a plurality of strutting pieces.
Further, described adjustment column is double-screw bolt, and described strutting piece is enclosed within on described double-screw bolt movably, and the two ends of described strutting piece are respectively equipped with the nut coordinating with described double-screw bolt.
Further, a described n adjustment column distributes along described even circumferential, thereby is convenient to adjust the vertical position of radio-frequency coil.
Alternatively, described adjustment column and described strutting piece are four.
Apparatus for processing plasma provided by the invention, each strutting piece of its coil support device comprises the sub-strutting piece of multistage, and every cross-talk strutting piece is equipped with described circumferential recess, and the sub-strutting piece of described multistage can be adjusted independently of one another in the position on vertical.Thereby, not only can adjust the distance between whole radio-frequency coil and wafer by adjusting the position of each strutting piece, also can in the position on vertical, adjust the turn-to-turn distance between each circle of radio-frequency coil by adjusting every cross-talk strutting piece, further increased the adjustable window of technique, plasma distribution for wafer top is further adjusted, more Optimization Technology result.
Further, described adjustment column is double-screw bolt, and described a plurality of sub-strutting pieces are enclosed within respectively on described double-screw bolt movably, and the top and bottom of every sub-strutting piece are equipped with the nut coordinating with described double-screw bolt.Thereby be convenient to installation and vertical movement of sub-strutting piece.
Alternatively, described radio-frequency coil is solenoid type coil.
In an example of the present invention, the platypelloid type coil of described radio-frequency coil for coiling in single plane, described strutting piece is single ring, described single ring is formed with a circumferential recess.
Further, described mounting means and lower installed part arrange and are annular in interval relative to one another along the two ends up and down of described adjustment column respectively, thereby make coil support device appearance profile attractive in appearance and mounting means and lower installed part less less on the impact of radio frequency field uniformity.
Further, the quantity of described circumferential recess is identical with the number of turn of described radio-frequency coil.Thus, not only guarantee radio-frequency coil fixation, and be convenient to the machine-shaping of each strutting piece.
Certainly in the present invention, described adjustment column can be also leading screw, described strutting piece is enclosed within described adjustment column slidably and the upside of described strutting piece and downside are distributed with nut, described adjustment column is connected with drive motors, thereby described drive motors is for rotating described adjustment column so that described nut regulates the position of described radio-frequency coil in described adjustment column along described adjustment column lifting.Thereby improve the automaticity of inductively coupled plasma treatment facility.
In the present invention, described radio-frequency coil vertical movement along described adjustment column by Driven by Hydraulic Cylinder.
In the present invention, the position manual adjustments of described radio-frequency coil in described adjustment column.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination obviously and is easily understood becoming the description of embodiment, wherein:
Fig. 1 is according to the front view of the inductively coupled plasma treatment facility of the embodiment of the present invention;
Fig. 2 is the vertical view of the inductively coupled plasma treatment facility shown in Fig. 1;
Fig. 3 is the schematic diagram of the lower installed part in the inductively coupled plasma treatment facility shown in Fig. 1; With
Fig. 4 is that the strutting piece that is provided with the sub-strutting piece of multistage in the inductively coupled plasma treatment facility shown in Fig. 1 is arranged on the schematic diagram in adjustment column.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " be only for describing object, and can not be interpreted as indication or hint relative importance.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; It can be mechanical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.In addition,, in description of the invention, except as otherwise noted, the implication of " a plurality of " is two or more.
Below with reference to Fig. 1-Fig. 4, inductively coupled plasma treatment facility 1000 provided by the invention is described.
According to the inductively coupled plasma treatment facility 1000 of the embodiment of the present invention, as shown in Figure 1, comprise: reaction chamber 7, radio-frequency coil 200 and wafer support (scheming not shown), wherein, in reaction chamber, there is dielectric cap 8, radio-frequency coil 200 is arranged on dielectric cap 8 tops by coil support device 100, for radio-frequency (RF) energy induction is coupled to reaction chamber 7 to produce and to maintain plasma in reaction chamber 7.Wafer support is for supporting wafers, and wherein the distance between radio-frequency coil 200 and wafer support regulates by adjusting the position of radio-frequency coil 200 on coil bracing or strutting arrangement 100.
According to the inductively coupled plasma treatment facility 1000 of the embodiment of the present invention, the position of radio-frequency coil 200 on coil bracing or strutting arrangement 100 is adjustable, thereby the distance between adjustable radio-frequency coil 200 and wafer, increased process window, by regulating the distance between radio-frequency coil 200 and wafer, can change the distribution of the plasma that arrives wafer surface, and then improve the PROCESS FOR TREATMENT effect of wafer.
In the present embodiment, apparatus for processing plasma 1000 also comprises detection system (scheming not shown), driving mechanism (scheming not shown) and control system (scheming not shown), wherein, detection system for detection of wafer processing process parameter such as thicknesses of layers of plasma density, etch rate, deposition etc., detection system can adopt detection systems more known to a person of ordinary skill in the art as sensors such as probe, spectral detection, is not just described in detail here.Driving mechanism is adjusted the position of radio-frequency coil 200 on coil bracing or strutting arrangement 100 for drive coil bracing or strutting arrangement 100, and control system is adjusted the position of radio-frequency coil 200 on coil bracing or strutting arrangement 100 automatically for the process parameter control driving mechanism detecting according to detection system.Thereby improved the automaticity of apparatus for processing plasma 1000.Wherein, driving mechanism can be drive motors or hydraulic cylinder etc., and driving mechanism is connected to adjust radio-frequency coil with respect to the distance of wafer by drive coil bracing or strutting arrangement 100 with coil support device 100.Control system can be computer program or PCB parts etc.
Particularly, wafer processing process parameter is at least one in the film thickness uniformity depositing on plasma density in reaction chamber, the plasma distribution uniformity in reaction chamber, the deposition/etch speed on wafer, wafer.Thereby guaranteed the technological effect of wafer, guaranteed the uniformity of wafer engraving and deposition.
According to the coil support device 100 of the embodiment of the present invention, as shown in Figure 1, comprising: mounting means 1, lower installed part 2, a n adjustment column 3 and n strutting piece 4, wherein, the two ends of adjustment column 3 are connected with lower installed part 2 with mounting means 1 respectively, and n adjustment column 3 is arranged on same circumference.In other words, the two ends of each adjustment column 3 are connected with lower installed part 2 with mounting means 1 respectively, and n adjustment column 3 is circle distribution.N strutting piece 4 is located at accordingly respectively in n adjustment column 3 and is adjustable along the vertical position of adjusting 3, and each strutting piece 4 is provided with the circumferential recess 40 coordinating for the periphery with radio-frequency coil 200, and n is more than or equal to 1 integer.Particularly, n strutting piece 4 is respectively insulating part, thus with radio-frequency coil 200 insulation, can be by PEEK(polyether-ether-ketone), Ultem(Polyetherimide) etc. material make.When the outer rim of radio-frequency coil 200 coordinates with circumferential recess 40, because radio-frequency coil 200 itself has certain outside tension force, radio-frequency coil 200 can be fixedly mounted on coil support device 100.Optionally, adjustment column 3 and strutting piece 4 are four.
In some embodiments of the invention, radio-frequency coil 200 is solenoid type coil, now the number of adjustment column 3 and strutting piece 4 is the integer that is greater than 1, when assembling, first the lower end of n adjustment column 3 is separately fixed on lower installed part 2, then n strutting piece 4 is located at respectively in n adjustment column 3 accordingly, then radio-frequency coil 200 is coordinated to radio-frequency coil 200 is fixed on n strutting piece 4 with the circumferential recess 40 of each strutting piece 4, finally mounting means 1 is fixed on to the upper end of n adjustment column 3, radio-frequency coil 200 installations.In the time need to adjusting the vertical position of radio-frequency coil 200, adjusting the vertical position of each strutting piece 4 in corresponding adjustment column 3 is the vertical position of capable of regulating radio-frequency coil 200.
Wherein, radio-frequency coil 200 can the vertical movement along adjustment column 3 by Driven by Hydraulic Cylinder, certainly radio-frequency coil 200 also can manual adjustments in the position of adjustment column 3, in other words, can also can adjust by increasing the controlled self-adjusting systems of formation such as hydraulic cylinder the vertical position of each strutting piece 4 by the vertical position of each strutting piece 4 of manual adjustment.
In other embodiment of the present invention, radio-frequency coil 200 can be the platypelloid type coil coiling in single plane, accordingly, strutting piece 4 is single ring, and single ring is formed with a circumferential recess 40 and coordinates fixedly platypelloid type coil with the outer rim with platypelloid type coil.Now, by adjusting the strutting piece 4 of single ring, at the vertical position of adjustment column 3, adjust the vertical position of radio-frequency coil 200.Certainly, the invention is not restricted to this, when radio-frequency coil 200 is platypelloid type coil, strutting piece 4 also can be for a plurality of, now on each strutting piece 4, are formed with a circumferential recess 40 with fixing platypelloid type coil.In the following description, take number that radio-frequency coil 200 is solenoid type coil and adjustment column 3 and strutting piece 4 is and is greater than 1 integer and describes as example.
According to the coil support device 100 of the embodiment of the present invention, n strutting piece 4 is located at accordingly respectively in n adjustment column 3 and is adjustable along vertical position, radio-frequency coil 200 is fixed on n strutting piece 4, when adjusting the vertical position of each strutting piece 4 in corresponding adjustment column 3, n strutting piece 4 can drive radio-frequency coil 200 to move, thereby the vertical position of capable of regulating radio-frequency coil 200, increased process window, and this n strutting piece 4 profiles are less, therefore less for the impact of radiofrequency field, and only need radio-frequency coil 200 can be supported on to different vertical positions with a set of coil support device 100, reduced cost, without the coil support device 100 of changing different model, regulate the vertical position of radio-frequency coil 200, and this coil support device 100 is simple in structure, radio-frequency coil 200 can be conveniently installed.
Further, circumferential recess 40 is a plurality of, and a plurality of circumferential recess 40 is along the vertical interval setting of strutting piece 4.Thereby be convenient to the machine-shaping of each strutting piece 4, and be convenient to radio-frequency coil 200 and be installed on a plurality of strutting pieces 4.Preferably, the quantity of circumferential recess 40 is identical with the number of turn of radio-frequency coil 200.Thus, not only guarantee radio-frequency coil 200 fixations, and be convenient to the machine-shaping of each strutting piece 4.
Particularly, a plurality of adjustment columns 3 distribute along even circumferential.Thereby be convenient to adjust the vertical position of radio-frequency coil 200.
Further, adjustment column 3 is double-screw bolt, and strutting piece 4 is enclosed within on double-screw bolt 3 movably, and the two ends of strutting piece 4 are respectively equipped with the nut 5 coordinating with double-screw bolt 3.When strutting piece 4 is installed on double-screw bolt 3, first a nut 5 is screwed on the lower end of double-screw bolt 3, then strutting piece 4 is set on double-screw bolt 3, finally another nut 5 is screwed on double-screw bolt 3 so that strutting piece 4 is fixed on to this position.Thereby, be convenient to the installation of strutting piece 4 and vertically mobile.
In the time need to adjusting the vertical position of radio-frequency coil 200, first the nut 5 that is positioned at double-screw bolt 3 upper ends is up twisted to the segment distance double-screw bolt 3 of maybe this nut 5 being back-outed, then the nut 5 that is positioned at double-screw bolt 3 lower ends by adjustment promotes strutting pieces 4 and moves on double-screw bolt 3, then the nut of the nut of upper end 5 and lower end 5 is tightened in to the two ends of strutting piece 4, completes the movement of the vertical position of strutting piece 4.
According to some embodiments of the present invention, as shown in Figure 4, each strutting piece 4 can comprise the sub-strutting piece 41 of multistage, and every cross-talk strutting piece 41 is equipped with circumferential recess 40, and the sub-strutting piece 41 of multistage can be adjusted independently of one another in the position on vertical.Thereby, not only can adjust the distance between whole radio-frequency coil 200 and wafer by adjusting the position of each strutting piece 4, also can in the position on vertical, adjust the turn-to-turn distance between radio-frequency coil 200 each circles by adjusting every cross-talk strutting piece 41, further increased the adjustable window of technique, plasma distribution for wafer top is further adjusted, more Optimization Technology result.
Further, adjustment column 3 is double-screw bolt, and a plurality of sub-strutting pieces 41 are enclosed within respectively on double-screw bolt 3 movably, and the top and bottom of every sub-strutting piece 41 are equipped with the nut 5 coordinating with double-screw bolt 3.Thereby be convenient to installation and vertical movement of sub-strutting piece 41.
In the example of Fig. 4, each strutting piece 4 comprises three cross-talk strutting piece 41a, 41b and 41c, the upper end of sub-strutting piece 41a is provided with nut 5a and lower end is provided with nut 5b, nut 5a and the position of nut 5b limit stator support 41a on double-screw bolt 3, the lower end of sub-strutting piece 41b is provided with nut 5c, nut 5b and the position of nut 5c limit stator support 41b on double-screw bolt 3, the lower end of sub-strutting piece 41c is provided with nut 5d, nut 5c and the position of nut 5d limit stator support 4c on double-screw bolt 3.
As shown in Figures 2 and 3, in some embodiments of the invention, mounting means 1 and lower installed part 2 arrange and are annular in interval relative to one another along the two ends up and down of adjustment column 3 respectively.Thereby make the profile of coil support device 100 appearance looks elegant and mounting means 1 and lower installed part 2 less, thereby upper and lower installed part is less on the impact of radio frequency field uniformity.
In the example of Fig. 1-Fig. 3, coil support device 100 also comprises fixture 6, on mounting means 1, be formed with fixing hole (scheming not shown) with mounting fixing parts 6, on fixture 6, be formed with the first gap (scheming not shown), on lower installed part 2, be formed with the second gap 20, the leading-in end 201 of radio-frequency coil 200 coordinates with the first gap, and exit 202 coordinates further determine the circumferential position of radio-frequency coil 200 with the second gap 20.Particularly, this fixture 6 is insulating part, can be by PEEK(polyether-ether-ketone), Ultem(Polyetherimide) etc. material make.Mounting means 1, lower installed part 2, adjustment column 3 are metalwork, can be stainless steels.By be provided with fixture 6 on mounting means 1, can avoid radio-frequency coil 200 to contact with mounting means 1, play the effect of mounting means 1 and radio-frequency coil 200 insulation.Certainly the invention is not restricted to this, mounting means 1, lower installed part 2 and adjustment column 3 can be nonmetal parts, now the leading-in end 201 of radio-frequency coil 200 can directly coordinate with mounting means 1, and exit 202 and lower installed part 2 coordinate to determine the circumferential position of radio-frequency coil 200.
According to the coil support device 100 of the embodiment of the present invention, not only can be by adjusting the vertical position of each strutting piece 4 in corresponding adjustment column 3 and then adjusting the vertical position of whole radio-frequency coil 200, thereby also can adjust by adjusting the vertical position of every cross-talk strutting piece 41 in adjustment column 3 the turn-to-turn distance of radio-frequency coil 200, make the vertical position of radio-frequency coil 200 easy to adjust, increased process window.
In other embodiment of the present invention, as shown in Figure 1, adjustment column 3 is leading screw, strutting piece 4 is enclosed within adjustment column 3 slidably and the upside of strutting piece 4 and downside are distributed with nut 5, adjustment column 3 is connected with drive motors (scheming not shown), drive motors be used for rotating adjustment column 3 so that nut 5 along adjustment column 3 liftings, thereby regulate the position of radio-frequency coil 200 in adjustment column 3.Thereby improve the automaticity of inductively coupled plasma treatment facility 1000.
According to the inductively coupled plasma treatment facility of the embodiment of the present invention, the position of radio-frequency coil on coil bracing or strutting arrangement is adjustable, thereby the distance between adjustable radio-frequency coil and wafer, increased process window, by regulating the distance between radio-frequency coil and wafer, can change the distribution of the plasma that arrives wafer surface, and then improve the PROCESS FOR TREATMENT effect of wafer.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or feature can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: in the situation that not departing from principle of the present invention and aim, can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.

Claims (17)

1. an inductively coupled plasma treatment facility, is characterized in that, comprising:
The reaction chamber with dielectric cap;
Radio-frequency coil, described radio-frequency coil is arranged on described dielectric cap top by coil support device, for radio-frequency (RF) energy induction is coupled to described reaction chamber to produce and to maintain plasma in described reaction chamber; With
Wafer support, for supporting wafers, the distance between wherein said radio-frequency coil and described wafer support regulates by adjusting the position of described radio-frequency coil on described coil support device.
2. apparatus for processing plasma according to claim 1, is characterized in that, also comprises:
Detection system for detection of wafer processing process parameter;
For driving described coil support device to adjust the driving mechanism of the position of described radio-frequency coil on described coil support device; With
For driving mechanism described in the process parameter control detecting according to described detection system, automatically adjust the control system of the position of described radio-frequency coil on described coil support device.
3. apparatus for processing plasma according to claim 2, it is characterized in that, described wafer processing process parameter is at least one in the film thickness uniformity depositing on plasma density in described reaction chamber, the plasma distribution uniformity in described reaction chamber, the deposition/etch speed on described wafer, described wafer.
4. apparatus for processing plasma according to claim 1, is characterized in that, described coil support device comprises:
Mounting means and lower installed part;
N adjustment column, the two ends of described adjustment column are connected with lower installed part with described mounting means respectively, and a described n adjustment column is arranged on same circumference;
N strutting piece, a described n strutting piece is located at accordingly respectively in a described n adjustment column and is adjustable along the vertical position of described adjustment column, and described in each, strutting piece is provided with the circumferential recess for coordinating with the periphery of described radio-frequency coil, and n is more than or equal to 1 integer.
5. apparatus for processing plasma according to claim 4, is characterized in that, described circumferential recess is a plurality of, and described a plurality of circumferential recess is along the vertical interval setting of described strutting piece.
6. apparatus for processing plasma according to claim 4, is characterized in that, a described n adjustment column distributes along described even circumferential.
7. apparatus for processing plasma according to claim 6, is characterized in that, described adjustment column and described strutting piece are four.
8. apparatus for processing plasma according to claim 4, is characterized in that, described in each, strutting piece comprises the sub-strutting piece of multistage, and every cross-talk strutting piece is equipped with described circumferential recess, and the sub-strutting piece of described multistage can be adjusted independently of one another in the position on vertical.
9. apparatus for processing plasma according to claim 8, it is characterized in that, described adjustment column is double-screw bolt, and described a plurality of sub-strutting pieces are enclosed within respectively on described double-screw bolt movably, and the top and bottom of every sub-strutting piece are equipped with the nut coordinating with described double-screw bolt.
10. apparatus for processing plasma according to claim 4, is characterized in that, described radio-frequency coil is solenoid type coil.
11. apparatus for processing plasma according to claim 4, is characterized in that, the platypelloid type coil of described radio-frequency coil for coiling in single plane, and described strutting piece is single ring, described single ring is formed with a circumferential recess.
12. apparatus for processing plasma according to claim 4, is characterized in that, described adjustment column is double-screw bolt, and described strutting piece is enclosed within on described double-screw bolt movably, and the two ends of described strutting piece are respectively equipped with the nut coordinating with described double-screw bolt.
13. apparatus for processing plasma according to claim 4, is characterized in that, described mounting means and lower installed part arrange and be annular in interval relative to one another along the two ends up and down of described adjustment column respectively.
14. apparatus for processing plasma according to claim 4, is characterized in that, the quantity of described circumferential recess is identical with the number of turn of described radio-frequency coil.
15. apparatus for processing plasma according to claim 4, it is characterized in that, described adjustment column is leading screw, described strutting piece is enclosed within described adjustment column slidably and the upside of described strutting piece and downside are distributed with nut, described adjustment column is connected with drive motors, thereby described drive motors is for rotating described adjustment column so that described nut regulates the position of described radio-frequency coil in described adjustment column along described adjustment column lifting.
16. apparatus for processing plasma according to claim 4, is characterized in that, described radio-frequency coil is the vertical movement along described adjustment column by Driven by Hydraulic Cylinder.
17. apparatus for processing plasma according to claim 4, is characterized in that, the position manual adjustments of described radio-frequency coil in described adjustment column.
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CN110233093A (en) * 2018-07-02 2019-09-13 吉佳蓝科技股份有限公司 Mechanically control the substrate board treatment of plasma density
CN111048386A (en) * 2018-10-12 2020-04-21 聚昌科技股份有限公司 Adjustable plasma reaction cavity structure of radio frequency coil
CN111415854A (en) * 2019-01-04 2020-07-14 北京北方华创微电子装备有限公司 Control method and control device for semiconductor process
CN111785493A (en) * 2020-07-30 2020-10-16 上海华虹宏力半导体制造有限公司 Radio frequency coil device and polysilicon etching machine
CN113709959A (en) * 2020-05-22 2021-11-26 江苏鲁汶仪器有限公司 Breakdown-preventing ion source discharge device
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225746B1 (en) * 1999-03-03 2001-05-01 Anelva Corporation Plasma processing system
US6304036B1 (en) * 2000-08-08 2001-10-16 Archimedes Technology Group, Inc. System and method for initiating plasma production
US6471830B1 (en) * 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
TW200933798A (en) * 2007-12-19 2009-08-01 Applied Materials Inc Apparatus and method for processing a substrate using inductively coupled plasma technology
CN101877312A (en) * 2009-04-28 2010-11-03 东京毅力科创株式会社 Plasma processing apparatus
CN102560436A (en) * 2010-12-13 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 Vapor deposition equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6225746B1 (en) * 1999-03-03 2001-05-01 Anelva Corporation Plasma processing system
US6304036B1 (en) * 2000-08-08 2001-10-16 Archimedes Technology Group, Inc. System and method for initiating plasma production
US6471830B1 (en) * 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
TW200933798A (en) * 2007-12-19 2009-08-01 Applied Materials Inc Apparatus and method for processing a substrate using inductively coupled plasma technology
CN101877312A (en) * 2009-04-28 2010-11-03 东京毅力科创株式会社 Plasma processing apparatus
CN102560436A (en) * 2010-12-13 2012-07-11 北京北方微电子基地设备工艺研究中心有限责任公司 Vapor deposition equipment

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108695130A (en) * 2017-04-05 2018-10-23 北京北方华创微电子装备有限公司 A kind of regulating device and semiconductor processing equipment
CN108695130B (en) * 2017-04-05 2020-07-17 北京北方华创微电子装备有限公司 Adjusting device and semiconductor processing equipment
CN110233093A (en) * 2018-07-02 2019-09-13 吉佳蓝科技股份有限公司 Mechanically control the substrate board treatment of plasma density
CN110233093B (en) * 2018-07-02 2021-08-24 吉佳蓝科技股份有限公司 Substrate processing apparatus for mechanically controlling plasma density
CN111048386A (en) * 2018-10-12 2020-04-21 聚昌科技股份有限公司 Adjustable plasma reaction cavity structure of radio frequency coil
CN111415854A (en) * 2019-01-04 2020-07-14 北京北方华创微电子装备有限公司 Control method and control device for semiconductor process
CN111415854B (en) * 2019-01-04 2023-12-22 北京北方华创微电子装备有限公司 Control method and control device for semiconductor process
CN110047728A (en) * 2019-03-26 2019-07-23 上海华力微电子有限公司 A kind of insulating base and dry etching equipment
CN113709959A (en) * 2020-05-22 2021-11-26 江苏鲁汶仪器有限公司 Breakdown-preventing ion source discharge device
CN111785493A (en) * 2020-07-30 2020-10-16 上海华虹宏力半导体制造有限公司 Radio frequency coil device and polysilicon etching machine
CN114599142A (en) * 2022-03-07 2022-06-07 盛吉盛(宁波)半导体科技有限公司 Plasma conditioning device, plasma conditioning method, plasma generating device, and semiconductor processing device

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