CN103578905B - Inductively coupled plasma processing equipment - Google Patents
Inductively coupled plasma processing equipment Download PDFInfo
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- CN103578905B CN103578905B CN201210265954.6A CN201210265954A CN103578905B CN 103578905 B CN103578905 B CN 103578905B CN 201210265954 A CN201210265954 A CN 201210265954A CN 103578905 B CN103578905 B CN 103578905B
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Abstract
The invention discloses a kind of inductively coupled plasma processing equipment, including: there is the reaction chamber of dielectric cap；Radio-frequency coil, described radio-frequency coil is arranged on above described dielectric cap by coil support device, for being inductively coupled in described reaction chamber to produce in described reaction chamber by radio-frequency (RF) energy and maintaining plasma；And wafer support, it being used for supporting wafer, the distance between wherein said radio-frequency coil and described wafer support is adjusted by adjusting described radio-frequency coil position on described coil support device.The inductively coupled plasma processing equipment that the present invention provides, radio-frequency coil position in coil support means is adjustable, thus the distance between adjustable radio-frequency coil and wafer, increase process window, by the distance between regulation radio-frequency coil and wafer, the distribution of the plasma arriving wafer surface can be changed, and then improve the PROCESS FOR TREATMENT effect of wafer.
Description
Technical field
The present invention relates to semiconductor processing equipment field, especially relate to a kind of inductively coupled plasma processing equipment.
Background technology
Plasma apparatus is widely used in the processing technology such as quasiconductor, solaode, flat pannel display.Current
In manufacturing process, the plasma producing method used has: direct-current discharge, capacitance coupling plasma (CCP)
Type, the type such as inductively coupled plasma (ICP) type and Ecr plasma (ECR).Mesh
The electric discharge of these types front is widely used in physical vapor deposition (PVD), plasma etching and plasma
Body chemical vapor phase growing etc..
In inductively coupled plasma equipment, solenoid type radio-frequency coil is applied widely, and usual solenoid type coil is pacified
It is contained in the top of reaction chamber, by making to excite plasma, line in reaction chamber to coil input radio frequency power
Circle position above reaction chamber is usually fixed constant.Owing to coil is the source producing plasma, therefore line
The impact of the Parameters variation plasma of circle is the biggest.Generally, those skilled in the art the most habitually attempts to pass through
The concrete structure improving coil improves its plasma characteristics excited.Therefore, how by adjusting the every of coil
Parameter reaches to improve isoionic distribution, and then the process results reached is those skilled in the art's problems faced.
Summary of the invention
It is contemplated that at least solve one of technical problem present in prior art.
To this end, it is an object of the present invention to propose the inductively coupled plasma of a kind of adjustable radio-frequency coil vertical position
Body processing equipment.
The inductively coupled plasma processing equipment that the present invention provides, including: there is the reaction chamber of dielectric cap；Radio frequency line
Circle, described radio-frequency coil is arranged on above described dielectric cap by coil support device, for radio-frequency (RF) energy is sensed coupling
It is bonded in described reaction chamber produce in described reaction chamber and maintains plasma；And wafer support, use
In supporting wafer, the distance between wherein said radio-frequency coil and described wafer support is by adjusting described radio-frequency coil
Position on described coil support device is adjusted.
The inductively coupled plasma processing equipment that the present invention provides, radio-frequency coil position in coil support means is can
Adjust, thus the distance between adjustable radio-frequency coil and wafer, increase process window, by regulation radio-frequency coil with
Distance between wafer, can change the distribution of the plasma arriving wafer surface, and then improve the PROCESS FOR TREATMENT of wafer
Effect.
It addition, the inductively coupled plasma processing equipment that the present invention provides also includes: detecting system, it is used for detecting wafer
Process technological parameter；For driving described coil support device to adjust described radio-frequency coil at described coil support device
On the drive mechanism of position；Automatic for drive mechanism described in the process parameter control that detects according to described detecting system
Adjust the control system of described radio-frequency coil position on described coil support device, so can be real-time according to work
Skill result adjusts the distance between coil and wafer, therefore, it is possible to improve the efficiency of plasma processing.
Specifically, the plasma density in described wafer processing process parameter is described reaction chamber, described reaction chamber
The uniform film thickness of deposition on deposition/etch speed on interior plasma distribution uniformity, described wafer, described wafer
At least one in property.Thus ensure that the technological effect of wafer, it is ensured that wafer engraving and the uniformity of deposition.
Described coil support device includes: mounting means and lower installed part；N adjustment column, the two ends of described adjustment column are divided
Not being connected with described mounting means and lower installed part, described n adjustment column is arranged on same circumference；N support member,
Described n support member is respectively correspondingly located in described n adjustment column and adjustable along the vertical position of described adjustment column,
Each described support member is provided with the circumferential recess for coordinating with the periphery of described radio-frequency coil, and n is whole more than or equal to 1
Number.
Radio-frequency coil is fixed on n support member, when adjusting each support member vertical position in corresponding adjustment column
Time, n support member can drive radio-frequency coil to move, thus the vertical position of adjustable radio-frequency coil, increase process window
Mouthful, and this n support member profile is less, therefore it is less for the impact of radio-frequency field, and only need to prop up with a set of coil
Support arrangement, by radio-frequency coil being supported on different vertical positions, reduces cost, it is not necessary to change different model
Coil support device regulates the vertical position of radio-frequency coil, and this coil support apparatus structure is simple, can be convenient and swift
Installation radio-frequency coil.
Further, described circumferential recess is multiple, and the plurality of circumferential recess sets along being vertically spaced of described support member
Put, consequently facilitating the machine-shaping of each support member, and be easy to radio-frequency coil and be installed on multiple support member.
Further, described adjustment column is stud, and described support member is enclosed within described stud movably, and described support member
Be respectively arranged at two ends with the nut coordinated with described stud.
Further, described n adjustment column is distributed along described even circumferential, consequently facilitating adjust the vertical position of radio-frequency coil
Put.
Alternatively, described adjustment column and described support member are four.
The apparatus for processing plasma that the present invention provides, each support member of its coil support device includes that many cross-talks support
Part, every cross-talk support member is equipped with described circumferential recess, and described many cross-talks support member position on vertical can be the most only
On the spot adjust.Thus, between the whole radio-frequency coil of position adjustment and the wafer not only by each support member of adjustment
Distance, also by the turn-to-turn adjusted between every cross-talk support member each circle of position adjustment radio-frequency coil on vertical away from,
Further increase the adjustable window of technique, the plasma distribution above wafer is further adjusted, more
Optimize process results.
Further, described adjustment column is stud, and the plurality of sub-support member is enclosed within described stud the most movably,
The top and bottom of every sub-support member are equipped with the nut coordinated with described stud.Consequently facilitating the installation of sub-support member
With vertically movable.
Alternatively, described radio-frequency coil is solenoid type coil.
In an example of the present invention, described radio-frequency coil is the pancake coil of coiling in single plane, described
Support member is single ring, and described single ring is formed with a circumferential recess.
Further, described mounting means and lower installed part are spaced relative to one another along the two ends up and down of described adjustment column respectively
Arrange and be annular, so that coil support device appearance is attractive in appearance and the profile of mounting means and lower installed part is less
Less on the impact of radio frequency field uniformity.
Further, the quantity of described circumferential recess is identical with the number of turn of described radio-frequency coil.Thus, not only ensure that radio frequency
Coil fixation, and it is easy to the machine-shaping of each support member.
The most in the present invention, described adjustment column can also be leading screw, and described support member is enclosed within described adjustment column slidably
Going up and the upper side and lower side of described support member is distributed with nut, described adjustment column is connected with driving motor, described driving
Motor is used for rotating described adjustment column so that described nut along the lifting of described adjustment column thus regulates described radio-frequency coil in institute
State the position in adjustment column.Thus improve the automaticity of inductively coupled plasma processing equipment.
In the present invention, described radio-frequency coil is by vertically movable along described adjustment column of Driven by Hydraulic Cylinder.
In the present invention, described radio-frequency coil position in described adjustment column manually regulates.
The additional aspect of the present invention and advantage will part be given in the following description, and part will become from the following description
Substantially, or by the practice of the present invention recognize.
Accompanying drawing explanation
Above-mentioned and/or the additional aspect of the present invention and advantage will become bright from combining the accompanying drawings below description to embodiment
Aobvious and easy to understand, wherein:
Fig. 1 is the front view of the inductively coupled plasma processing equipment according to the embodiment of the present invention；
Fig. 2 is the top view of the inductively coupled plasma processing equipment shown in Fig. 1；
Fig. 3 is the schematic diagram of the lower installed part in the inductively coupled plasma processing equipment shown in Fig. 1；With
Fig. 4 is the support member peace being provided with many cross-talks support member in the inductively coupled plasma processing equipment shown in Fig. 1
The schematic diagram being contained in adjustment column.
Detailed description of the invention
Embodiments of the invention are described below in detail, and the example of described embodiment is shown in the drawings, the most from start to finish phase
Same or similar label represents same or similar element or has the element of same or like function.Below with reference to
The embodiment that accompanying drawing describes is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
In describing the invention, it is to be understood that term " " center ", " longitudinally ", " laterally ", " on ",
D score, "front", "rear", "left", "right", " vertically ", " level ", " top ", " end "
" interior ", " outward " etc. instruction orientation or position relationship be based on orientation shown in the drawings or position relationship, be only for
It is easy to describe the present invention and simplifying describe rather than instruction or the device of hint indication or element must have specifically
Orientation, with specific azimuth configuration and operation, be therefore not considered as limiting the invention.Additionally, term " the
One ", " second " be only used for describe purpose, and it is not intended that instruction or hint relative importance.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " install ",
" be connected ", " connection " should be interpreted broadly, and connects for example, it may be fixing, it is also possible to be to removably connect,
Or be integrally connected；Can be to be mechanically connected；Can be to be joined directly together, it is also possible to be indirectly connected to by intermediary,
It can be the connection of two element internals.For the ordinary skill in the art, can be with in concrete condition understanding
State term concrete meaning in the present invention.Additionally, in describing the invention, except as otherwise noted, the containing of " multiple "
Justice is two or more.
Below with reference to Fig. 1-Fig. 4, the inductively coupled plasma processing equipment 1000 that the present invention provides is described.
Inductively coupled plasma processing equipment 1000 according to embodiments of the present invention, as it is shown in figure 1, include: reaction
Chamber 7, radio-frequency coil 200 and wafer support (not shown), wherein, have dielectric cap 8 in reaction chamber,
Radio-frequency coil 200 is arranged on above dielectric cap 8 by coil support device 100, for by radio-frequency (RF) energy inductively
To produce in reaction chamber 7 and to maintain plasma to reaction chamber 7.Wafer support is used for supporting wafer,
Wherein the distance between radio-frequency coil 200 and wafer support is by adjusting radio-frequency coil 200 in coil support means 100
On position be adjusted.
Inductively coupled plasma processing equipment 1000 according to embodiments of the present invention, radio-frequency coil 200 is in coil support
Position on device 100 is adjustable, thus the distance between adjustable radio-frequency coil 200 and wafer, increase technique
Window, by the distance between regulation radio-frequency coil 200 and wafer, can change the plasma of arrival wafer surface
Distribution, and then improve the PROCESS FOR TREATMENT effect of wafer.
In the present embodiment, apparatus for processing plasma 1000 also includes detecting system (not shown), drive mechanism
(not shown) and control system (not shown), wherein, detecting system is used for detecting wafer processing process parameter
The such as thicknesses of layers etc. of plasma density, etch rate, deposition, detecting system can use ordinary skill
The more known detecting systems such as sensors such as probe, spectral detection of personnel etc., are the most just not described in detail.Driving machine
Structure, for driving coil support device 100 to adjust the radio-frequency coil 200 position in coil support means 100, controls
System is propped up at coil for automatically adjusting radio-frequency coil 200 according to the process parameter control drive mechanism of detecting system detection
Position on support arrangement 100.Thus improve the automaticity of apparatus for processing plasma 1000.Wherein, drive
Mechanism can be to drive motor or hydraulic cylinder etc., and drive mechanism is connected with coil support device 100 with by driving coil to prop up
Support arrangement 100 adjusts the radio-frequency coil distance relative to wafer.Control system can be computer program or PCB portion
Part etc..
Specifically, the plasma density in wafer processing process parameter is reaction chamber, the plasma in reaction chamber
At least one in the film thickness uniformity of deposition on deposition/etch speed on distributing homogeneity, wafer, wafer.Thus
Ensure that the technological effect of wafer, it is ensured that wafer engraving and the uniformity of deposition.
Coil support device 100 according to embodiments of the present invention, as it is shown in figure 1, include: mounting means 1, lower installation
Part 2, n adjustment column 3 and n support member 4, wherein, the two ends of adjustment column 3 respectively with mounting means 1 and lower peace
Piece installing 2 is connected, and n adjustment column 3 is arranged on same circumference.In other words, the two ends of each adjustment column 3 respectively with
Mounting means 1 is connected with lower installed part 2, and n adjustment column 3 is circumferentially distributed.N support member 4 respectively correspondingly sets
In n adjustment column 3 and along adjust 3 vertical position adjustable, each support member 4 be provided with for radio-frequency coil
The circumferential recess 40 that the periphery of 200 coordinates, n is the integer more than or equal to 1.Specifically, n support member 4 is respectively
Insulating part, thus insulate with radio-frequency coil 200, can be by PEEK(polyether-ether-ketone), Ultem(Polyetherimide)
Make Deng material.When the outer rim of radio-frequency coil 200 coordinates with circumferential recess 40, due to radio-frequency coil 200 tool itself
There is the most outside tension force so that radio-frequency coil 200 can be fixedly mounted on coil support device 100.Optionally,
Adjustment column 3 and support member 4 are four.
In some embodiments of the invention, radio-frequency coil 200 is solenoid type coil, now adjustment column 3 and support member
The number of 4 is the integer more than 1, when assembling, first the lower end of n adjustment column 3 is separately fixed at lower installed part
On 2, then n support member 4 is respectively correspondingly located in n adjustment column 3, then by radio-frequency coil 200 with every
The circumferential recess 40 of individual support member 4 coordinates with to be fixed on n support member 4 by radio-frequency coil 200, finally by upper peace
Piece installing 1 is fixed on the upper end of n adjustment column 3, radio-frequency coil 200 installation.When needs adjust radio-frequency coil 200
Vertical position time, adjust each support member 4 i.e. adjustable radio frequency line of the vertical position in corresponding adjustment column 3
The vertical position of circle 200.
Wherein, radio-frequency coil 200 can be by vertically movable along adjustment column 3 of Driven by Hydraulic Cylinder, certain radio-frequency coil 200
The most manually adjustable in the position of adjustment column 3, in other words, can manually adjust the vertical of each support member 4
The system that position also can form controlled adjustment automatically by increasing hydraulic cylinder etc. adjusts the vertical of each support member 4
Position.
In other embodiments of the present invention, radio-frequency coil 200 can be the flat molded line of coiling in single plane
Circle, accordingly, support member 4 is single ring, and single ring is formed with a circumferential recess 40 with outside with pancake coil
Edge coordinates with fixing pancake coil.Now, by adjusting the support member 4 vertical position in adjustment column 3 of single ring
Adjust the vertical position of radio-frequency coil 200.Certainly, the invention is not restricted to this, when radio-frequency coil 200 is flat molded line
During circle, support member 4 can also be multiple, the most each support member 4 is formed with a circumferential recess 40 with fixing flat
Flat pattern coil.In the following description, with radio-frequency coil 200 for solenoid type coil and adjustment column 3 and support member 4
Number be and illustrate more than as a example by the integer of 1.
Coil support device 100 according to embodiments of the present invention, n support member 4 is respectively correspondingly located at n adjustment column
On 3 and adjustable along vertical position, radio-frequency coil 200 is fixed on n support member 4, when adjusting each support member 4
During vertical position in corresponding adjustment column 3, n support member 4 can drive radio-frequency coil 200 to move, thus adjustable
The vertical position of whole radio-frequency coil 200, increases process window, and this n support member 4 profile is less, the most right
Less in the impact of radio-frequency field, and only radio-frequency coil 200 need to can be supported on not with a set of coil support device 100
Same vertical position, reduces cost, it is not necessary to the coil support device 100 changing different model regulates radio-frequency coil
The vertical position of 200, and this coil support device 100 simple in construction, can conveniently install radio-frequency coil 200.
Further, circumferential recess 40 is multiple, and multiple circumferential recess 40 is vertically spaced setting along support member 4.
Consequently facilitating the machine-shaping of each support member 4, and it is easy to radio-frequency coil 200 and is installed on multiple support member 4.
Preferably, the quantity of circumferential recess 40 is identical with the number of turn of radio-frequency coil 200.Thus, not only ensure that radio-frequency coil
200 fixations, and it is easy to the machine-shaping of each support member 4.
Specifically, multiple adjustment columns 3 are circumferentially uniformly distributed.Consequently facilitating adjust the vertical position of radio-frequency coil 200.
Further, adjustment column 3 is stud, and support member 4 is enclosed within stud 3 movably, and the two ends of support member 4
It is respectively equipped with the nut 5 coordinated with stud 3.When support member 4 is installed on stud 3, first by a nut 5
It is screwed on the lower end of stud 3, then support member 4 is set on stud 3, finally another nut 5 is screwed to spiral shell
So that support member 4 is fixed on this position on post 3.Thus, it is simple to the installation of support member 4 and vertically movable.
When needing the vertical position adjusting radio-frequency coil 200, the nut 5 that first will be located in stud 3 upper end up twists one section
This nut 5 is maybe back-outed stud 3 by distance, is then positioned at the nut 5 of stud 3 lower end by adjustment and promotes support member 4
Stud 3 moves, then the nut 5 of upper end and the nut 5 of lower end is tightened in the two ends of support member 4, completes
The movement of the vertical position of support member 4.
According to some embodiments of the present invention, as shown in Figure 4, each support member 4 can include many cross-talks support member 41,
Every cross-talk support member 41 is equipped with circumferential recess 40, and the many cross-talks support member 41 position on vertical can be independently of one another
Adjust.Thus, between the whole radio-frequency coil of position adjustment 200 and the wafer not only by each support member 4 of adjustment
Distance, also by adjusting between every cross-talk support member 41 each circle of position adjustment radio-frequency coil 200 on vertical
Turn-to-turn away from, further increase the adjustable window of technique, the plasma distribution above wafer further adjusted
Whole, more optimize process results.
Further, adjustment column 3 is stud, and many sub-support members 41 are enclosed within stud 3 the most movably, each
The top and bottom of sub-support member 41 are equipped with the nut 5 coordinated with stud 3.Consequently facilitating the installation of sub-support member 41
With vertically movable.
In the example of fig. 4, each support member 4 includes three cross-talk support member 41a, 41b and 41c, sub-support member 41a
Upper end be provided with nut 5a and lower end is provided with nut 5b, nut 5a and nut 5b limit stator support 41a at spiral shell
Position on post 3, the lower end of sub-support member 41b is provided with nut 5c, nut 5b and nut 5c and limits stator support
41b position on stud 3, the lower end of sub-support member 41c is provided with nut 5d, nut 5c and nut 5d and limits
Sub-support member 4c position on stud 3.
As shown in Figures 2 and 3, in some embodiments of the invention, mounting means 1 and lower installed part 2 are respectively along adjusting
The two ends up and down of whole post 3 are spaced setting relative to one another and are annular.So that coil support device 100 outward appearance
Profile attractive in appearance and mounting means 1 and lower installed part 2 is less, thus radio frequency field uniformity is affected relatively by installed part up and down
Little.
In the example of Fig. 1-Fig. 3, coil support device 100 also includes fixture 6, mounting means 1 is formed solid
Determine hole (not shown) with mounting fixing parts 6, fixture 6 is formed the first gap (not shown), lower installation
Being formed with the second gap 20 on part 2, the leading-in end 201 of radio-frequency coil 200 coordinates with the first gap, and exit 202
The circumferential position further determining that radio-frequency coil 200 is coordinated with the second gap 20.Specifically, this fixture 6 is exhausted
Edge part, can be by PEEK(polyether-ether-ketone), Ultem(Polyetherimide) etc. material make.Mounting means 1, under
Installed part 2, adjustment column 3 are metalwork, can be stainless steels.By being provided with fixture on mounting means 1
6 can avoid radio-frequency coil 200 contacts with mounting means 1, plays the work of mounting means 1 and radio-frequency coil 200 insulation
With.Certainly the invention is not restricted to this, mounting means 1, lower installed part 2 and adjustment column 3 can be nonmetal parts, now penetrate
Frequently the leading-in end 201 of coil 200 can directly coordinate with mounting means 1, and exit 202 coordinates with lower installed part 2
To determine the circumferential position of radio-frequency coil 200.
Coil support device 100 according to embodiments of the present invention, adjusts corresponding not only by adjusting each support member 4
Vertical position on whole post 3 and then adjust the vertical position of whole radio-frequency coil 200, props up also by adjusting every cross-talk
The support member 41 vertical position in adjustment column 3 thus adjust the turn-to-turn of radio-frequency coil 200 away from so that radio-frequency coil 200
Vertical position easy to adjust, increase process window.
In other embodiments of the present invention, as it is shown in figure 1, adjustment column 3 is leading screw, support member 4 overlaps slidably
In adjustment column 3 and the upper side and lower side of support member 4 is distributed with nut 5, adjustment column 3 is with to drive motor (not shown
Go out) it is connected, drive motor to be used for rotating adjustment column 3 so that nut 5 lifts along adjustment column 3, thus regulate radio frequency line
Circle 200 positions in adjustment column 3.Thus improve the automaticity of inductively coupled plasma processing equipment 1000.
Inductively coupled plasma processing equipment according to embodiments of the present invention, radio-frequency coil position in coil support means
It is set to adjustable, thus the distance between adjustable radio-frequency coil and wafer, increase process window, by regulation radio frequency
Distance between coil and wafer, can change the distribution of the plasma arriving wafer surface, and then improve the work of wafer
Skill treatment effect.
In the description of this specification, reference term " embodiment ", " some embodiments ", " illustrative examples ", " show
Example ", the description of " concrete example " or " some examples " etc. means to combine this embodiment or example describes specific features, knot
Structure, material or feature are contained at least one embodiment or the example of the present invention.In this manual, to above-mentioned term
Schematic representation be not necessarily referring to identical embodiment or example.And, the specific features of description, structure, material or
Person's feature can combine in any one or more embodiments or example in an appropriate manner.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: do not taking off
In the case of the principles and objective of the present invention, these embodiments can be carried out multiple change, revise, replace and modification,
The scope of the present invention is limited by claim and equivalent thereof.
Claims (16)
1. an inductively coupled plasma processing equipment, it is characterised in that including:
There is the reaction chamber of dielectric cap；
Radio-frequency coil, described radio-frequency coil is arranged on above described dielectric cap by coil support device, for by radio frequency energy
Amount is inductively coupled in described reaction chamber to produce in described reaction chamber and maintains plasma；With
Wafer support, is used for supporting wafer, and the distance between wherein said radio-frequency coil and described wafer support is led to
Cross and adjust described radio-frequency coil position on described coil support device and be adjusted；
Described coil support device includes: mounting means and lower installed part；N adjustment column, the two ends of described adjustment column are divided
Not being connected with described mounting means and lower installed part, described n adjustment column is arranged on same circumference；N support member,
Described n support member is respectively correspondingly located in described n adjustment column and adjustable along the vertical position of described adjustment column,
Each described support member is provided with the circumferential recess for coordinating with the periphery of described radio-frequency coil, and n is whole more than or equal to 1
Number.
Apparatus for processing plasma the most according to claim 1, it is characterised in that also include:
For detecting the detecting system of wafer processing process parameter；
For driving described coil support device to adjust driving of described radio-frequency coil position on described coil support device
Motivation structure；With
Automatically described radio-frequency coil is adjusted for drive mechanism described in the process parameter control that detects according to described detecting system
The control system of the position on described coil support device.
Apparatus for processing plasma the most according to claim 2, it is characterised in that described wafer processing process is joined
Number is the plasma density in described reaction chamber, plasma distribution uniformity in described reaction chamber, described
At least one in the film thickness uniformity of deposition on deposition/etch speed on wafer, described wafer.
Apparatus for processing plasma the most according to claim 1, it is characterised in that described circumferential recess is multiple,
And the plurality of circumferential recess is vertically spaced setting along described support member.
Apparatus for processing plasma the most according to claim 1, it is characterised in that described n adjustment column is along institute
State even circumferential distribution.
Apparatus for processing plasma the most according to claim 5, it is characterised in that described adjustment column and described
Support member is four.
Apparatus for processing plasma the most according to claim 1, it is characterised in that each described support member includes
Many cross-talks support member, every cross-talk support member is equipped with described circumferential recess, described many cross-talks support member position on vertical
Put and can adjust independently of one another.
Apparatus for processing plasma the most according to claim 7, it is characterised in that described adjustment column is stud,
Described many cross-talks support member is enclosed within described stud the most movably, and the top and bottom of every cross-talk support member are equipped with
The nut coordinated with described stud.
Apparatus for processing plasma the most according to claim 1, it is characterised in that described radio-frequency coil is helical
Cast coil.
Apparatus for processing plasma the most according to claim 1, it is characterised in that described radio-frequency coil is at list
The pancake coil of coiling in individual plane, described support member is single ring, and described single ring is formed with a circumferential recess.
11. apparatus for processing plasma according to claim 1, it is characterised in that described adjustment column is stud,
Described support member is enclosed within described stud movably, and being respectively arranged at two ends with of described support member coordinates with described stud
Nut.
12. apparatus for processing plasma according to claim 1, it is characterised in that described mounting means and lower peace
Piece installing is spaced setting respectively relative to one another and is annular along the two ends up and down of described adjustment column.
13. apparatus for processing plasma according to claim 1, it is characterised in that the quantity of described circumferential recess
Identical with the number of turn of described radio-frequency coil.
14. apparatus for processing plasma according to claim 1, it is characterised in that described adjustment column is leading screw,
Described support member is enclosed within described adjustment column slidably and the upper side and lower side of described support member is distributed with nut, institute
Stating adjustment column and be connected with driving motor, described driving motor is used for rotating described adjustment column so that described nut is along described tune
Whole post lifts thus regulates described radio-frequency coil position in described adjustment column.
15. apparatus for processing plasma according to claim 1, it is characterised in that described radio-frequency coil is by hydraulic pressure
Cylinder drives vertically movable along described adjustment column.
16. apparatus for processing plasma according to claim 1, it is characterised in that described radio-frequency coil is described
Position in adjustment column manually regulates.
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| CN201210265954.6A CN103578905B (en) | 2012-07-30 | 2012-07-30 | Inductively coupled plasma processing equipment |
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| CN201210265954.6A CN103578905B (en) | 2012-07-30 | 2012-07-30 | Inductively coupled plasma processing equipment |
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| CN103578905A CN103578905A (en) | 2014-02-12 |
| CN103578905B true CN103578905B (en) | 2016-08-31 |
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| CN108695130B (en) * | 2017-04-05 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Adjusting device and semiconductor processing equipment |
| KR102190794B1 (en) * | 2018-07-02 | 2020-12-15 | 주식회사 기가레인 | A substrate processing apparatus for mechanically controlling plasma density |
| CN111048386B (en) * | 2018-10-12 | 2022-07-12 | 汉民科技股份有限公司 | Adjustable plasma reaction cavity structure of radio frequency coil |
| CN111415854B (en) * | 2019-01-04 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Control method and control device for semiconductor process |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
| CN113709959A (en) * | 2020-05-22 | 2021-11-26 | 江苏鲁汶仪器有限公司 | Breakdown-preventing ion source discharge device |
| CN111785493A (en) * | 2020-07-30 | 2020-10-16 | 上海华虹宏力半导体制造有限公司 | Radio frequency coil device and polysilicon etching machine |
| CN114599142A (en) * | 2022-03-07 | 2022-06-07 | 盛吉盛(宁波)半导体科技有限公司 | Plasma conditioning device, plasma conditioning method, plasma generating device, and semiconductor processing device |
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| TW200933798A (en) * | 2007-12-19 | 2009-08-01 | Applied Materials Inc | Apparatus and method for processing a substrate using inductively coupled plasma technology |
| CN102560436A (en) * | 2010-12-13 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vapor deposition equipment |
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| US6225746B1 (en) * | 1999-03-03 | 2001-05-01 | Anelva Corporation | Plasma processing system |
| US6304036B1 (en) * | 2000-08-08 | 2001-10-16 | Archimedes Technology Group, Inc. | System and method for initiating plasma production |
| US6471830B1 (en) * | 2000-10-03 | 2002-10-29 | Veeco/Cvc, Inc. | Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system |
| TW200933798A (en) * | 2007-12-19 | 2009-08-01 | Applied Materials Inc | Apparatus and method for processing a substrate using inductively coupled plasma technology |
| CN102560436A (en) * | 2010-12-13 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Vapor deposition equipment |
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